JP6656282B2 - Method of manufacturing substrate structure, substrate structure, method of bonding electronic component to substrate structure, and electronic component - Google Patents

Method of manufacturing substrate structure, substrate structure, method of bonding electronic component to substrate structure, and electronic component Download PDF

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JP6656282B2
JP6656282B2 JP2018037437A JP2018037437A JP6656282B2 JP 6656282 B2 JP6656282 B2 JP 6656282B2 JP 2018037437 A JP2018037437 A JP 2018037437A JP 2018037437 A JP2018037437 A JP 2018037437A JP 6656282 B2 JP6656282 B2 JP 6656282B2
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substrate
electronic component
initial
binder
substrate structure
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JP2018129518A (en
Inventor
シェーファー ミヒャエル
シェーファー ミヒャエル
シュミット ウォルフガング
シュミット ウォルフガング
ハインリック アンドレアス
ハインリック アンドレアス
イサベル バレラ−マリン マリア
イサベル バレラ−マリン マリア
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ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー
ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー
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    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

本発明は、電子部品を結合するための基板構造を製造するための方法に関する。さらに、本発明は、電子部品と結合するための基板構造に関する。本発明は、さらに、電子部品を基板構造と結合するための方法に関する。本発明はまた、電子部品を基板と結合するための方法に関する。さらに、本発明は、基板構造と結合する電子部品に関する。   The present invention relates to a method for manufacturing a substrate structure for bonding electronic components. Further, the present invention relates to a substrate structure for coupling with an electronic component. The invention further relates to a method for bonding an electronic component to a substrate structure. The invention also relates to a method for bonding an electronic component to a substrate. Further, the present invention relates to an electronic component to be combined with the substrate structure.

パワーエレクトロニクスにおいて、例えば顧客によってのみ適用される必要のある、乾燥焼結ペーストを備えた基板または構成要素を準備することは既知の技術である。生産処理において、構成要素、特に最初に乾燥された焼結ペーストで基板に取り付けられる電子部品は、当該構成要素を、取り付けられた場所から焼結される場所に搬送している間にスリップする可能性がある。   In power electronics, it is a known technique to prepare a substrate or component with a dry sintered paste, for example, which needs to be applied only by the customer. In a production process, components, especially electronic components that are attached to a substrate with initially dried sintering paste, can slip while transporting the component from the installed location to the location to be sintered. There is.

この点において、構成要素が、特に電子部品が、熱を同時に適用しつつ乾燥焼結ペースト上にセットされることは既知の技術である。多くの電子部品に対して、熱を加えることによるそのような装着が不適切な搬送ロバスト性のみをもたらすことがわかっている。これは、曲がった構成要素、および／または汚染された表面、および／または不適当な表面のため、電子部品が、装着された場所から焼結された位置への搬送の信頼性を高めることを可能にするには接着性が不充分であるためである。したがって、装着はされているが、マスクもしくは金型によって未だはんだ付けまたは焼結されていない電子部品を固定すること、またはバネによって時間のかかる方法で電子部品をクランプすることは既知の技術である。   In this regard, it is a known technique that the components, especially the electronic components, are set on the dry sintering paste while simultaneously applying heat. For many electronic components, it has been found that such mounting by applying heat only results in inadequate transport robustness. This makes the electronic components more reliable to transport from the mounted location to the sintered location because of bent components and / or contaminated surfaces and / or improper surfaces. This is because the adhesiveness is insufficient to make it possible. Thus, it is a known technique to secure an electronic component that has been mounted but not yet soldered or sintered by a mask or mold, or to clamp the electronic component in a time-consuming manner by a spring. .

前記先行技術に基づいて、本発明の目的は、電子部品と結合するための基板構造を製造する方法を明示することであり、電子部品が、装着された場所から焼結される位置に搬送されている間、充分な搬送ロバスト性がもたらされることである。   Based on the prior art, it is an object of the present invention to specify a method of manufacturing a substrate structure for bonding with an electronic component, wherein the electronic component is transported from a place where it is mounted to a position where it is sintered. During transport, sufficient transport robustness is provided.

さらに、本発明の目的は、電子部品と結合するための基板構造を明示することであり、基板構造は、装着はされているが、未だはんだ付けまたは焼結されていない構成が、基板構造上で充分な搬送ロバスト性を有するよう設計される。   Furthermore, an object of the present invention is to specify a board structure for coupling with an electronic component. The board structure is mounted but not yet soldered or sintered. Is designed to have sufficient transport robustness.

さらに、本発明の目的は、電子部品を基板と結合するための方法を明示することである。さらに、本発明の目的は、基板構造と結合される電子部品を明示することである。   It is a further object of the present invention to specify a method for bonding an electronic component to a substrate. It is a further object of the present invention to specify electronic components that are to be coupled to a substrate structure.

本発明によれば、前記目的は、電子部品と結合するための基板構造を製造するための方法に関して、請求項１の発明の主題により実現され、基板構造に関して、請求項８の発明の主題により実現され、電子部品を基板構造と結合するための方法に関して、請求項１１の発明の主題により実現され、電子部品を基板と結合する方法に関して、請求項１６の発明の主題により実現され、電子部品に関して、請求項２３の発明の主題により実現される。   According to the invention, the object is achieved according to the subject of the invention of claim 1 with respect to a method for manufacturing a substrate structure for coupling with electronic components, and with respect to the substrate structure, according to the subject of the invention of claim 8. An electronic component implemented according to the subject matter of claim 11 with respect to a method for coupling an electronic component to a substrate structure, and an electronic component implemented according to the subject matter of claim 16 with respect to a method of coupling an electronic component to a substrate. Is achieved by the subject matter of claim 23.

本発明は、電子部品と結合するための基板構造を製造する方法を明示するという概念に基づいており、そのような方法は、以下のステップ、すなわち、
第１の面および第２の面を有する基板、特に、ＤＣＢ基板、ＰＣＢ基板、またはリードフレームを準備するステップ、
基板の第１の面のいくつかの部分上へ初期固着剤を塗布するステップを含む。 The present invention is based on the concept of specifying a method of manufacturing a substrate structure for bonding with electronic components, such a method comprising the following steps:
Providing a substrate having a first side and a second side, in particular, a DCB substrate, a PCB substrate, or a lead frame;
Applying an initial binder onto some portion of the first side of the substrate.

本発明の方法を用いて製造された基板構造は、電子部品とのその後の結合を可能にするよう機能する。   Substrate structures manufactured using the method of the present invention function to allow subsequent bonding with electronic components.

本発明の方法の実施形態の好ましい形式において、結合材が、特に、初期固着剤を塗布する前に、基板の第１の面のいくつかの部分上に塗布される。結合材は、基板の第１の面を完全にはカバーしない。初期固着剤および結合材の両方が、基板の第１の面上に塗布される。   In a preferred form of the embodiment of the method of the invention, the binder is applied on some parts of the first side of the substrate, in particular before applying the initial binder. The binder does not completely cover the first side of the substrate. Both the initial binder and the binder are applied on the first side of the substrate.

結合材は焼結ペーストであり、特に、銀を含む焼結ペースト、はんだ、導電接着剤、または接着膜であり、基板を電子部品と実際に接着させるよう機能する。初期固着剤は、初期固着、すなわち、基板を電子部品上に、または電子部品を基板上に、一時的に取り付けるためにのみ機能する。初期固着、すなわち付着を用いて、構成要素が、装着された場所から焼結される位置に搬送されるのに充分な特性を生成する。初期固着剤は、仮固着剤である。言い換えると、初期固着剤は、基板構造、すなわち基板と、電子部品との一時的な固着を可能にする固着剤である。   The binder is a sintered paste, in particular a sintered paste containing silver, a solder, a conductive adhesive or an adhesive film, which functions to actually bond the substrate to the electronic component. The initial bonding agent functions only for initial bonding, that is, for temporarily mounting the substrate on the electronic component or the electronic component on the substrate. Initial sticking, or adhesion, is used to create a property sufficient for the component to be transported from the mounting location to the location to be sintered. The initial fixing agent is a temporary fixing agent. In other words, the initial bonding agent is a bonding agent that enables temporary bonding between the substrate structure, that is, the substrate and the electronic component.

初期固着剤は、はんだおよび／または接着剤の形態とすることができる。特に、初期固着剤は、２０〜４５重量％の熱可塑性ポリマー、４０〜７０重量％の有機溶媒、１０〜２５重量％の無機充填剤粒子、および０〜０．５重量％の他の添加物を含む接着剤である。   The initial binder can be in the form of a solder and / or an adhesive. In particular, the initial binder comprises 20-45% by weight of a thermoplastic polymer, 40-70% by weight of an organic solvent, 10-25% by weight of inorganic filler particles, and 0-0.5% by weight of other additives. It is an adhesive containing.

初期固着剤の熱可塑性ポリマーは、例えば、ガラス転移温度が６０〜１２０℃である。ガラス転移温度の決定は、ＤＤＣによって、すなわちダイナミック差熱量測定によって、またはＤＳＣによって、すなわち示差走査熱量測定によって、加熱速度１０Ｋ／分で実行される。   The thermoplastic polymer of the initial fixing agent has, for example, a glass transition temperature of 60 to 120 ° C. The determination of the glass transition temperature is performed at a heating rate of 10 K / min by DDC, ie by dynamic calorimetry, or by DSC, ie by differential scanning calorimetry.

熱可塑性ポリマーは、特に（メタ）アクリル共重合体の形態とすることができる。熱可塑性（メタ）アクリル共重合体のモル質量範囲は、３５０００〜７００００ｇ／ｍｏｌ（Ｍｗ＝３５０００〜７００００ｇ／ｍｏｌ）とすることができる。モル質量範囲は、ゲル浸透クロマトグラフィー（ＧＰＣ）により決定する。ゲル浸透クロマトグラフィーに対して、以下、すなわち、固定相としてのポリスチロールゲル、移動相としてのテトラヒドロフラン、ポリスチロール基準を適用する。   The thermoplastic polymer can be in particular in the form of a (meth) acrylic copolymer. The molar mass range of the thermoplastic (meth) acrylic copolymer can be 35,000 to 70000 g / mol (Mw = 35000 to 70000 g / mol). The molar mass range is determined by gel permeation chromatography (GPC). The following applies to gel permeation chromatography, ie, polystyrene gel as stationary phase, tetrahydrofuran as mobile phase, polystyrene standards.

４０〜７０重量％の有機溶媒は、３０〜１００重量％のテルピネオールを含む。   40-70% by weight of the organic solvent contains 30-100% by weight of terpineol.

１０〜２５重量％の無機充填剤粒子は、５〜２０μｍの、好ましくは５〜１０μｍの粒子サイズ（ｄ５０）を有する。前記無機充填剤粒子は、例えば酸化アルミニウムおよび／または二酸化シリコンの形態とすることができる。粒子サイズ（ｄ５０）の決定は、好ましくはレーザ回折法により行われる。   10-25% by weight of the inorganic filler particles have a particle size (d50) of 5-20 μm, preferably 5-10 μm. The inorganic filler particles can be, for example, in the form of aluminum oxide and / or silicon dioxide. The determination of the particle size (d50) is preferably performed by a laser diffraction method.

０〜０．５重量％の他の添加物は、例えば湿潤剤の形態とすることができる。   The other additives, for example from 0 to 0.5% by weight, can be in the form of wetting agents, for example.

接着剤を用いて、特に、特定の組成、すなわち特定の配合組成を有する接着剤を用いて、均一に分散された初期固着剤点、特に接着点を、計算可能な最終高さで生成することができる。   Using an adhesive, in particular an adhesive having a specific composition, i.e. an adhesive having a specific formulation, to produce a homogeneously dispersed initial adhesive point, in particular an adhesion point, at a computable final height. Can be.

初期固着剤は、分注、浸漬、または噴射処理によって、基板の第１の面上に塗布することができる。特に、初期固着剤は、半球状接着点、すなわち半球状の点の形態で塗布される。   The initial fixative can be applied on the first side of the substrate by dispensing, dipping, or spraying. In particular, the initial fixative is applied in the form of hemispherical adhesion points, ie hemispherical points.

基板上に塗布される初期固着剤、特に、基板上に塗布される初期固着剤および基板上に塗布される結合材は乾燥させることができる。言い換えると、基板は、塗布された初期固着剤、および／または塗布された結合材と共に乾燥処理を受ける。乾燥処理は、１００〜１５０℃の対象物温度で、２〜３０分間、実行することができる。   The initial fixative applied on the substrate, especially the initial fixative applied on the substrate and the binder applied on the substrate, can be dried. In other words, the substrate undergoes a drying process with the applied initial binder and / or the applied binder. The drying process can be performed at an object temperature of 100 to 150 ° C. for 2 to 30 minutes.

乾燥処理、すなわち初期乾燥処理が実行されると、塗布された初期固着剤の厚さが、当該乾燥処理、すなわち初期乾燥処理によって、乾燥処理、すなわち初期乾燥処理後に薄くなる。   When the drying process, that is, the initial drying process, is performed, the thickness of the applied initial fixing agent is reduced by the drying process, that is, the initial drying process, after the drying process, that is, the initial drying process.

本発明の実施形態のさらなる形式において、塗布された初期固着剤を伴う基板、特に、塗布された初期固着剤および塗布された結合材を伴う基板は、当該基板の第１の面が移送要素に対面して配置されるように当該移送要素上に位置付けることができ、初期固着剤および／または結合材が、移送要素と少なくとも接着結合する。したがって、基板は、移送要素上に配置することができ、基板構造は、基板、初期固着剤、任意選択的に接触材および任意選択的に移送要素を備え、別の生産施設に、または別の処理装置に移動することができる。初期固着剤のみが、移送要素と接着結合することが可能である。小さなギャップが、例えば、移送要素と、任意選択的に存在する結合材との間に存在するであろう。   In a further form of embodiment of the invention, a substrate with an applied initial binder, in particular a substrate with an applied initial binder and an applied binder, is provided in which the first side of the substrate is connected to the transfer element. It can be positioned on the transfer element to be arranged face-to-face, wherein the initial adhesive and / or binder at least adhesively bond with the transfer element. Thus, the substrate can be disposed on a transfer element, wherein the substrate structure comprises the substrate, an initial binder, optionally a contact material and optionally a transfer element, at another production facility, or at another production facility. It can be moved to a processing unit. Only the initial fixative can be adhesively bonded to the transfer element. A small gap will exist, for example, between the transfer element and the optionally present binder.

初期固着剤は、結合材の側で基板の第１の面の少なくともいくつかの部分上に塗布される。初期固着剤は、分注、浸漬、または噴射処理によって、結合材の側に塗布される。例えば、初期固着剤は、結合材の側で少なくとも１つの接着点として塗布することができる。さらに、初期固着剤は、結合材の側で棒の形態で基板の第１の面上に塗布されると考えることができる。同じように、初期固着剤によって、結合材の全ての側を囲むことが可能である。   The initial binder is applied on at least some portions of the first side of the substrate on the side of the binder. The initial fixative is applied to the side of the binder by dispensing, dipping, or spraying. For example, the initial fixative can be applied as at least one bond point on the side of the binder. Further, the initial binder can be considered to be applied on the first side of the substrate in the form of a stick on the side of the binder. Similarly, it is possible to surround all sides of the binder with the initial binder.

初期固着剤は、結合材より厚くなるように、基板の第１の面に塗布することができる。言い換えると、初期固着剤は、垂直方向に、結合材の上部に突出する。初期固着剤は、結合材より材料厚が大きい。任意選択的な乾燥処理、すなわち初期乾燥処理の前では、初期固着剤は、乾燥処理、すなわち初期乾燥処理の後より厚い。   The initial binder may be applied to the first side of the substrate such that it is thicker than the binder. In other words, the initial binder protrudes vertically above the binder. The initial binder has a greater material thickness than the binder. Before the optional drying treatment, ie, the initial drying treatment, the initial fixing agent is thicker than after the drying treatment, ie, the initial drying treatment.

さらに、本発明は、電子部品と結合するための基板構造を明示するという概念に基づいており、当該基板構造は、上記した発明の方法で製造されることが好ましい。本発明の基板構造は、第１の面と第２の面とを有する基板を備え、初期固着剤が、基板の第１の面のいくつかの部分に塗布される。   Furthermore, the present invention is based on the concept of specifying a substrate structure for coupling to an electronic component, and the substrate structure is preferably manufactured by the above-described method of the invention. The substrate structure of the present invention comprises a substrate having a first side and a second side, wherein an initial binder is applied to some portions of the first side of the substrate.

基板は、ＤＣＢ基板、ＰＣＢ基板、またはリードフレームの形態とすることができる。   The substrate can be in the form of a DCB substrate, a PCB substrate, or a lead frame.

初期固着剤は、はんだおよび／または接着剤とすることができる。特に、初期固着剤は、２０〜４５重量％の熱可塑性ポリマー、４０〜７０重量％の有機溶媒、１０〜２５重量％の無機充填剤粒子、および０〜０．５重量％の他の添加物を含む接着剤の形態をとる。接着剤およびその組成物に関して、ならびに接着剤の個々のパラメータを決定する方法に関して、上記した方法と関連してすでに記載した補足説明を参照する。かかる補足説明はまた、基板構造に対して適用される。   The initial binder can be a solder and / or an adhesive. In particular, the initial binder comprises 20-45% by weight of a thermoplastic polymer, 40-70% by weight of an organic solvent, 10-25% by weight of inorganic filler particles, and 0-0.5% by weight of other additives. In the form of an adhesive containing With regard to the adhesive and its composition, as well as with regard to the method of determining the individual parameters of the adhesive, reference is made to the supplementary description already given in connection with the method described above. Such supplementary statements also apply to the substrate structure.

さらに、結合材は、基板の第１の面のいくつかの部分に塗布されることが好ましい。したがって、初期固着剤および結合材の両方を、基板の第１の面上に塗布することができる。初期固着剤は、基板構造上への電子部品の初期固着において、および、電子部品に塗布するための方法においてその役割を果たす。対照的に、結合材は、実際に固定する、すなわち、基板構造と電子部品とを効率的および恒久的に結合するよう機能する。結合材は、焼結ペースト、特に銀、はんだ、導電接着剤、または接着膜を含む焼結ペーストとすることができる。   Further, the binder is preferably applied to some portions of the first side of the substrate. Thus, both the initial binder and the binder can be applied on the first side of the substrate. The initial fixative plays a role in the initial fixation of the electronic component on the substrate structure and in the method for applying to the electronic component. In contrast, the bonding material functions to actually secure, ie, efficiently and permanently bond the substrate structure and the electronic component. The binder can be a sintering paste, especially silver, solder, a conductive adhesive, or a sintering paste including an adhesive film.

初期固着剤は、結合材の側で基板の第１の面の少なくともいくつかの部分上に塗布される。初期固着剤は、結合材の側で、滴、半球、または棒の形態となるように設計することができる。本発明の実施形態の１つの形式において、結合材は、初期固着剤によって全ての側を囲まれることが可能である。   The initial binder is applied on at least some portions of the first side of the substrate on the side of the binder. The initial fixative can be designed to be in the form of drops, hemispheres, or rods on the side of the binder. In one form of an embodiment of the present invention, the binder can be surrounded on all sides by an initial binder.

初期固着剤は、結合材より厚くなるよう設計されることが好ましい。言い換えると、初期固着剤は、垂直方向において、結合材の上部に突出する。   The initial binder is preferably designed to be thicker than the binder. In other words, the initial binder projects vertically above the binder.

実施形態のさらなる形式において、基板構造は、移送要素を有し、当該移送要素は、初期固着剤、および／または結合材で少なくとも接着結合される。基板は、基板の第１の面が移送要素と対面して配置されるように、当該移送要素に対して位置付けられる。移送要素は、基板構造を第１の製造設備から別の製造設備に、または第１の製造装置から別の製造装置に搬送することを可能にするよう機能する。移送要素は、例えば接着力の低い支持膜の形態とすることができる。   In a further form of embodiment, the substrate structure has a transfer element, which is at least adhesively bonded with an initial binder and / or bonding material. The substrate is positioned relative to the transfer element such that the first side of the substrate is positioned facing the transfer element. The transfer element functions to enable transport of the substrate structure from the first manufacturing facility to another manufacturing facility or from the first manufacturing facility to another manufacturing facility. The transfer element can be, for example, in the form of a low adhesion support membrane.

さらに、本発明は、電子部品を基板構造と結合する方法を明示するという概念に基づく。特に、基板構造は、本発明の基板構造、および／または説明する本発明の方法を用いて製造された基板構造の形態とすることができる。電子部品を基板構造と結合する本発明の方法は、以下のステップ、すなわち、
・基板構造と電子部品とを、基板の第１の面が電子部品と対面して配置されるように、互いに位置付けるステップと、
・初期固着剤を基板の第１の面のいくつかの部分に塗布することによって、電子部品に基板構造を初期固着するステップと、
・基板構造を電子部品と結合するステップとを含む。 Furthermore, the invention is based on the concept of demonstrating how to couple an electronic component to a substrate structure. In particular, the substrate structure may be in the form of a substrate structure of the invention and / or a substrate structure manufactured using the described method of the invention. The method of the present invention for bonding an electronic component to a substrate structure comprises the following steps:
Positioning the substrate structure and the electronic component relative to each other such that the first side of the substrate is positioned facing the electronic component;
Initial bonding the substrate structure to the electronic component by applying an initial bonding agent to some portions of the first side of the substrate;
Coupling the substrate structure with the electronic component.

基板構造と電子部品とを、基板の第１の面が電子部品と対面して配置されるように、互いに位置付けるステップは、一方で、基板構造を電子部品上にセットするよう実行することができる。実施形態のさらなる形式において、電子部品が基板構造上に装着されることが考えられる。   The step of positioning the substrate structure and the electronic component relative to each other such that the first side of the substrate is located facing the electronic component can, on the other hand, be performed to set the substrate structure on the electronic component. . In a further form of embodiment, it is conceivable that the electronic component is mounted on a substrate structure.

基板構造と電子部品とを互いに対して位置付けるステップの後、基板構造を電子部品と初期固着するステップが行われる。前記初期固着は、基板の第１の面のいくつかの部分上に塗布される初期固着剤を用いて実行される。この目的のために、熱を加えることが好ましい。加える温度は１００〜１５０℃が好ましく、その結果、初期固着剤が熱によって活性化され、したがって、基板構造が、電子部品と初期固着することができる。初期固着処理によって、搬送ロバスト性が、初期固着において基板構造と結合された電子部品に対して実現することができ、電子部品は、ベルトコンベヤで供給された結果、揺さぶられて緩くなることを無くすことができる。代わりに、電子部品は、初期固着位置に維持される。   After the step of positioning the substrate structure and the electronic component relative to each other, a step of initially securing the substrate structure to the electronic component is performed. The initial bonding is performed using an initial bonding agent that is applied on some portions of the first surface of the substrate. Preferably, heat is applied for this purpose. The temperature to be applied is preferably 100 to 150 ° C., so that the initial fixing agent is activated by heat, so that the substrate structure can be initially fixed to the electronic component. By the initial fixing process, transport robustness can be achieved for the electronic components that are combined with the substrate structure in the initial fixing, and the electronic components are not shaken and loosened as a result of being supplied on the belt conveyor. be able to. Instead, the electronic component is maintained in the initial secure position.

電子部品は、半導体、ＤＣＢ基板、またはＰＣＢ基板の形態とすることができる。時間の観点から、基板構造を電子部品と結合するステップは、初期固着処理の後に行う。基板構造を電子部品と結合するステップは、例えば、焼結、プレス、またははんだ処理によって行うことができる。基板構造は、電子部品と共に焼結されることが好ましい。この目的のために、基板構造は、結合材、特に焼結ペーストを有する。   The electronic component can be in the form of a semiconductor, DCB substrate, or PCB substrate. In terms of time, the step of bonding the substrate structure with the electronic component is performed after the initial bonding process. The step of coupling the substrate structure with the electronic component can be performed, for example, by sintering, pressing, or soldering. Preferably, the substrate structure is sintered with the electronic component. For this purpose, the substrate structure has a binder, in particular a sintered paste.

電子部品を基板構造と結合する本発明の方法と関連した初期固着剤に関し、初期固着剤と関連してすでに記載した補足説明を参照する。また、初期固着剤および結合材の互いの配置に関して、すでに記載した補足説明を参照する。   With regard to the initial binder in connection with the method of the invention for bonding an electronic component to a substrate structure, reference is made to the supplementary description already given in connection with the initial binder. Also, reference is made to the supplementary description given above for the placement of the initial binder and the binder relative to each other.

電子部品と固着された基板構造は、当該基板構造を電子部品と結合するために処理炉に搬送されることが好ましい。処理炉は、例えば、加圧焼結炉、リフロー炉、またはラミネート窯の形態とすることができる。焼結処理の間、または加圧焼結処理の間、初期固着剤の有機成分および／またはポリマー成分は、そのほとんどが蒸発する。   The substrate structure fixed to the electronic component is preferably transferred to a processing furnace in order to couple the substrate structure with the electronic component. The processing furnace can be, for example, in the form of a pressure sintering furnace, a reflow furnace, or a laminating furnace. During the sintering process, or during the pressure sintering process, most of the organic and / or polymer components of the initial binder will evaporate.

初期固着剤の有機成分および／またはポリマー成分は、気化する、および／または熱分解される。基板構造を電子部品と結合するステップの間、初期固着剤によって形成された電子部品との結合は取り除かれ、特に、焼失および／または溶解される。   The organic and / or polymer components of the initial fixative are vaporized and / or pyrolyzed. During the step of bonding the substrate structure with the electronic component, the bond with the electronic component formed by the initial binder is removed, in particular, burned out and / or melted.

基板構造を電子部品と結合するステップの後、特に、焼結、または加圧焼結、および／またははんだ付け、および／またはプレス処理の後、初期固着剤の無機充填剤材料が、基板構造の第１の面でのほとんどの部分に、すなわち、排他的に、存在している。したがって、ほとんどの部分に対して、すなわち、排他的に、初期固着剤の無機充填剤材料が残っている。言い換えると、説明したような初期固着剤は、仮固着剤の形態をとり、実際の結合の後、すなわち、基板構造を電子部品と実際に恒久的に結合した後、ほとんどの部分に対して、または、完全に、取り除かれる。   After the step of bonding the substrate structure with the electronic components, in particular after sintering or pressure sintering and / or soldering and / or pressing, the inorganic filler material of the initial binder is replaced by It is present in most parts of the first aspect, ie exclusively. Thus, for the most part, ie exclusively, the inorganic filler material of the initial binder remains. In other words, the initial bonding agent as described takes the form of a temporary bonding agent, and after most of the actual bonding, i.e., after the substrate structure is actually permanently bonded to the electronic component, Or, completely, removed.

初期固着剤の組成物において、２０〜４５重量％の熱可塑性ポリマーが選択されることが好ましく、ガラス転移温度が、初期固着処理の間に基板構造に作用する温度未満であるような、特に１００〜１５０℃の温度未満であるようなガラス転移温度であることが好ましい。   In the composition of the initial fixing agent, it is preferred that 20 to 45% by weight of the thermoplastic polymer is selected, especially such that the glass transition temperature is below the temperature at which the substrate structure is affected during the initial fixing process, in particular 100%. Preferably, the glass transition temperature is less than a temperature of ~ 150 ° C.

本発明のさらなる態様は、電子要素を基板、特に、ＤＣＢ基板、ＰＣＢ基板、またはリードフレームと結合する方法に基づき、基板は、第１の面と第２の面とを有し、本方法は、以下のステップ、すなわち、
・第１の面および第２の面を有する電子部品を準備するステップと、
・電子部品の第１の面の、および／または基板の第１の面のいくつかの部分上へ初期固着剤を塗布するステップとを含む。 A further aspect of the invention is based on a method of coupling an electronic component with a substrate, in particular a DCB substrate, a PCB substrate or a lead frame, wherein the substrate has a first side and a second side, the method comprising: , The following steps:
Providing an electronic component having a first side and a second side;
Applying an initial bonding agent on the first side of the electronic component and / or on some part of the first side of the substrate.

基板の第１の面の、および／または電子部品の第１の面のいくつかの部分に、特に、初期固着剤を塗布する前に、結合材を塗布することが可能である。結合材は、基板の第１の面を、および／または電子部品の第１の面を、完全にはカバーしない。初期固着剤および結合材の両方を、基板の第１の面上に塗布することができる。   It is possible to apply a binder to the first side of the substrate and / or some parts of the first side of the electronic component, in particular before applying the initial binder. The bonding material does not completely cover the first side of the substrate and / or the first side of the electronic component. Both the initial binder and the binder can be applied on the first side of the substrate.

結合材は焼結ペーストであり、特に、銀を含む焼結ペースト、はんだ、導電接着剤、または接着膜であり、基板を電子部品と実際に接着させるよう機能する。初期固着剤は、初期固着、すなわち、基板を電子部品上に、または電子部品を基板上に、一時的に取り付けるためにのみ機能する。初期固着、すなわち付着を用いて、構成要素が、装着された場所から焼結される位置に搬送されるのに充分な特性を生成する。初期固着剤は仮固着剤である。言い換えると、初期固着剤は、基板と電子部品との一時的な固着を可能にする固着剤である。   The binder is a sintered paste, in particular a sintered paste containing silver, a solder, a conductive adhesive or an adhesive film, which functions to actually bond the substrate to the electronic component. The initial bonding agent functions only for initial bonding, that is, for temporarily mounting the substrate on the electronic component or the electronic component on the substrate. Initial sticking, or adhesion, is used to create a property sufficient for the component to be transported from the mounting location to the location to be sintered. The initial fixing agent is a temporary fixing agent. In other words, the initial fixing agent is a fixing agent that enables temporary fixing between the substrate and the electronic component.

初期固着剤は、はんだおよび／または接着剤の形態とすることができる。特に、初期固着剤は、２０〜４５重量％の熱可塑性ポリマー、４０〜７０重量％の有機溶媒、１０〜２５重量％の無機充填剤粒子、および０〜０．５重量％の他の添加物を含む接着剤である。   The initial binder can be in the form of a solder and / or an adhesive. In particular, the initial binder comprises 20-45% by weight of a thermoplastic polymer, 40-70% by weight of an organic solvent, 10-25% by weight of inorganic filler particles, and 0-0.5% by weight of other additives. It is an adhesive containing.

初期固着剤の熱可塑性ポリマーは、例えば、６０〜１２０℃のガラス転移温度を有する。ガラス転移温度の決定は、ＤＤＣによって、すなわち、ダイナミック差熱量測定によって、またはＤＳＣによって、すなわち、示差走査熱量測定によって、加熱速度１０Ｋ／分で実行される。   The thermoplastic polymer of the initial fixing agent has, for example, a glass transition temperature of 60 to 120 ° C. The determination of the glass transition temperature is performed at a heating rate of 10 K / min by DDC, ie by dynamic calorimetry or by DSC, ie by differential scanning calorimetry.

熱可塑性ポリマーは、特に（メタ）アクリル共重合体の形態とすることができる。熱可塑性（メタ）アクリル共重合体のモル質量範囲は、３５０００〜７００００ｇ／ｍｏｌ（Ｍｗ＝３５０００〜７００００ｇ／ｍｏｌ）とすることができる。モル質量範囲は、ゲル浸透クロマトグラフィー（ＧＰＣ）により決定する。ゲル浸透クロマトグラフィーに対して、以下の、すなわち、固定相としてのポリスチロールゲル、移動相としてのテトラヒドロフラン、ポリスチロール基準を適用する。   The thermoplastic polymer can be in particular in the form of a (meth) acrylic copolymer. The molar mass range of the thermoplastic (meth) acrylic copolymer can be 35,000 to 70000 g / mol (Mw = 35000 to 70000 g / mol). The molar mass range is determined by gel permeation chromatography (GPC). For gel permeation chromatography, the following applies: polystyrene gel as stationary phase, tetrahydrofuran as mobile phase, polystyrene standards.

４０〜７０重量％の有機溶媒は、３０〜１００重量％のテルピネオールを含む。   40-70% by weight of the organic solvent contains 30-100% by weight of terpineol.

１０〜２５重量％の無機充填剤粒子は、５〜２０μｍの、好ましくは、５〜１０μｍの、粒子サイズ（ｄ５０）を有する。前記無機充填剤粒子は、例えば、酸化アルミニウムおよび／または二酸化シリコンの形態とすることができる。粒子サイズ（ｄ５０）の決定は、好ましくはレーザ回折法により行われる。   10-25% by weight of the inorganic filler particles have a particle size (d50) of 5-20 μm, preferably 5-10 μm. The inorganic filler particles can be, for example, in the form of aluminum oxide and / or silicon dioxide. The determination of the particle size (d50) is preferably performed by a laser diffraction method.

０〜０．５重量％の他の添加物は、例えば湿潤剤の形態とすることができる。   The other additives, for example from 0 to 0.5% by weight, can be in the form of wetting agents, for example.

接着剤を用いて、特に特定の組成、すなわち、特定の配合組成を有する接着剤を用いて、均一に分散された初期固着剤点、特に接着点を、計算可能な最終高さで生成することができる。   Using an adhesive, in particular with a specific composition, i.e. with an adhesive having a specific formulation, to produce a homogeneously dispersed initial glue point, in particular a bond point, with a computable final height. Can be.

初期固着媒体は、電子部品の第１の面上に、および／または基板の第１の面上に、分注、浸漬、または噴射処理によって塗布することができる。特に、初期固着剤は、半球状接着点、すなわち半球状の点の形態で塗布される。   The initial fixation medium can be applied on the first side of the electronic component and / or on the first side of the substrate by a dispensing, dipping, or spraying process. In particular, the initial fixative is applied in the form of hemispherical adhesion points, ie hemispherical points.

塗布された初期固着剤、特に、塗布された初期固着剤および塗布された結合材は乾燥させることができる。言い換えると、電子部品、および／または基板は、塗布された初期固着剤、および／または塗布された結合材と共に、乾燥処理を受ける。乾燥処理は、１００〜１５０℃の対象物温度で、２〜３０分間、実行することができる。   The applied initial fixative, in particular the applied initial fixative and the applied binder can be dried. In other words, the electronic component and / or the substrate, together with the applied initial binder and / or the applied binder, undergo a drying process. The drying process can be performed at an object temperature of 100 to 150 ° C. for 2 to 30 minutes.

乾燥処理、すなわち初期乾燥処理が実行されると、塗布された初期固着剤の厚さが、当該乾燥処理、すなわち初期乾燥処理によって、乾燥処理、すなわち初期乾燥処理後に薄くなる。   When the drying process, that is, the initial drying process, is performed, the thickness of the applied initial fixing agent is reduced by the drying process, that is, the initial drying process, after the drying process, that is, the initial drying process.

初期固着剤は、結合材の側で、電子部品の第１の面の、および／または基板の第１の面の、少なくともいくつかの部分上に塗布することができる。初期固着剤は、分注、浸漬、または噴射処理によって、結合材の側に塗布される。例えば、初期固着剤は、結合材の側で少なくとも１つの接着点として塗布することができる。さらに、初期固着剤は、結合材の側で棒の形態で基板の第１の面上に塗布されると考えることができる。同じように、初期固着剤によって、結合材の全ての側を囲むことが可能である。   The initial binder can be applied on at least some portions of the first side of the electronic component and / or the first side of the substrate on the side of the binder. The initial fixative is applied to the side of the binder by dispensing, dipping, or spraying. For example, the initial fixative can be applied as at least one bond point on the side of the binder. Further, the initial binder can be considered to be applied on the first side of the substrate in the form of a stick on the side of the binder. Similarly, it is possible to surround all sides of the binder with the initial binder.

初期固着剤は、結合材より厚くなるように、電子部品の、および／または基板の第１の面に塗布することができる。言い換えると、初期固着剤は、垂直方向において、結合材の上部に突出する。初期固着剤は結合材より材料厚が大きい。任意選択的な乾燥処理、すなわち初期乾燥処理の前は、初期固着剤は、乾燥処理、すなわち初期乾燥処理の後より厚い。   The initial binder may be applied to the electronic component and / or to the first surface of the substrate to be thicker than the binder. In other words, the initial binder projects vertically above the binder. The initial binder has a greater material thickness than the binder. Prior to the optional drying treatment, ie, the initial drying treatment, the initial binder is thicker than the drying treatment, ie, after the initial drying treatment.

本発明の実施形態のさらなる形式において、塗布された初期固着剤、特に、塗布された初期固着剤および／または塗布された結合材を伴う電子部品は、電子部品の第１の面が移送要素と対面して配置されるように当該移送要素上に位置付けることができ、初期固着剤および／または結合材が、移送要素と少なくとも接着結合する。したがって、電子部品は、移送要素上に配置することができ、この構造を別の製造設備に、または別の製造装置に搬送することができる。初期固着剤のみが移送要素と接着結合することが可能である。小さなギャップが、例えば、移送要素と、任意選択的に存在する結合材との間に存在し得る。   In a further form of the embodiment of the invention, the electronic component with the applied initial binder, in particular the applied initial binder and / or the applied binder, wherein the first side of the electronic component is connected to the transfer element. It can be positioned on the transfer element to be arranged face-to-face, wherein the initial adhesive and / or binder at least adhesively bond with the transfer element. Thus, the electronic components can be arranged on a transport element and the structure can be transported to another manufacturing facility or to another manufacturing device. Only the initial binder can be adhesively bonded to the transfer element. A small gap may exist, for example, between the transfer element and optionally present binder.

電子部品を結合する方法は、さらに、以下のステップ、すなわち、
・電子部品と基板とを、電子部品の第１の面が基板と対面して配置されるように、互いに位置付けるステップと、
・初期固着剤をいくつかの部分上に塗布することによって電子部品を基板と初期固着するステップと、
・電子部品を基板と結合するステップとを含む。 The method of joining electronic components further comprises the following steps:
Positioning the electronic component and the substrate relative to each other such that the first surface of the electronic component is disposed facing the substrate;
Initial fixing the electronic component to the substrate by applying an initial fixing agent on some parts;
Coupling the electronic component to the substrate.

電子部品と基板とを互いに位置付けるステップは、一方で、基板が電子部品上にセットされるように実行することができる。実施形態のさらなる形式において、電子部品が基板上に取り付けられることが考えられる。   The step of positioning the electronic component and the substrate relative to each other can be performed such that the substrate is set on the electronic component. In a further form of embodiment, it is conceivable that the electronic component is mounted on a substrate.

基板と電子部品とを互いに位置付けるステップの後、電子部品を基板と初期固着するステップが行われる。前記初期固着は、いくつかの部分上に塗布される初期固着剤を用いて実行される。この目的のために熱を加えることが好ましい。印加温度は１００〜１５０℃が好ましく、その結果、初期固着剤が加えられた熱によって活性化され、したがって、電子部品は基板と初期固着することができる。   After the step of positioning the substrate and the electronic component relative to each other, a step of initially fixing the electronic component to the substrate is performed. Said initial fixation is performed with an initial fixative applied on some parts. Preferably, heat is applied for this purpose. The applied temperature is preferably 100 to 150 ° C., so that the initial fixing agent is activated by the applied heat, so that the electronic component can be initially fixed to the substrate.

初期固着処理によって、搬送ロバスト性が、基板と初期固着された電子部品に対して実現することができ、電子部品、および／または基板は、ベルトコンベヤで供給された結果、揺さぶられて緩くなることを無くすことができる。代わりに、電子部品、および／または基板は初期固着位置に維持される。   Due to the initial fixing process, transport robustness can be achieved for the electronic component initially fixed to the substrate, and the electronic component and / or the substrate are shaken and loose as a result of being supplied on the belt conveyor. Can be eliminated. Instead, the electronic components and / or the substrate are maintained in the initial secure position.

電子部品は、半導体、ＤＣＢ基板、またはＰＣＢ基板の形態とすることができる。時間の観点から、電子部品を基板と結合するステップは、初期固着処理の後に行う。基板を電子部品と結合するステップは、例えば、焼結、プレス、またははんだ処理によって行うことができる。基板は、電子部品と共に焼結されることが好ましい。この目的のために、基板および／または電子部品は、結合材、特に焼結ペーストを有する。   The electronic component can be in the form of a semiconductor, DCB substrate, or PCB substrate. In terms of time, the step of bonding the electronic component to the substrate is performed after the initial fixing process. The step of bonding the substrate with the electronic component can be performed, for example, by sintering, pressing, or soldering. The substrate is preferably sintered together with the electronic component. For this purpose, the substrate and / or the electronic component has a binder, in particular a sintered paste.

電子部品を基板と結合する本発明の方法と関連した初期固着剤に関し、初期固着剤と関連してすでに記載した補足説明を参照する。   With regard to the initial binder in connection with the method of the invention for bonding an electronic component to a substrate, reference is made to the supplementary description already given in connection with the initial binder.

電子部品と固着された基板は、電子部品を基板と結合するために処理炉に搬送されることが好ましい。処理炉は、例えば、加圧焼結炉、リフロー炉、またはラミネート窯の形態とすることができる。焼結処理の間または加圧焼結処理の間、初期固着剤の有機成分および／またはポリマー成分は、そのほとんどが蒸発する。初期固着剤の有機成分および／またはポリマー成分は、気化する、および／または熱分解される。電子部品を基板と結合するステップの間、初期固着剤によって形成された結合は取り除かれ、特に、焼失および／または溶解される。   The substrate fixed to the electronic component is preferably transported to a processing furnace for bonding the electronic component to the substrate. The processing furnace can be, for example, in the form of a pressure sintering furnace, a reflow furnace, or a laminating furnace. During the sintering process or during the pressure sintering process, most of the organic and / or polymer components of the initial binder will evaporate. The organic and / or polymer components of the initial fixative are vaporized and / or pyrolyzed. During the step of bonding the electronic component to the substrate, the bonds formed by the initial binder are removed, in particular burned out and / or melted.

電子部品を基板と結合するステップの後、特に、焼結、または加圧焼結、および／またははんだ付け、および／またはプレス処理の後、初期固着剤の無機充填剤材料が、基板の第１の面での、または電子部品の第１の面での、ほとんどの部分に、すなわち、排他的に、存在している。したがって、当該ほとんどの部分に対して、すなわち、排他的に、初期固着剤の無機充填剤材料が残っている。言い換えると、説明したような初期固着剤は、仮固着剤の形態をとり、実際の結合の後、すなわち、電子部品を基板と実際に恒久的に結合した後、ほとんどの部分に対して、または、完全に、取り除かれる。   After the step of bonding the electronic component to the substrate, in particular after sintering or pressure sintering and / or soldering and / or pressing, the inorganic filler material of the initial binder is used for the first of the substrate. Or in most parts of the electronic component on the first side, ie, exclusively. Thus, for the most part, ie exclusively, the inorganic filler material of the initial binder remains. In other words, the initial bonding agent as described takes the form of a temporary bonding agent, after the actual bonding, i.e., after the electronic component is actually permanently bonded to the substrate, for most parts, or Removed, completely ,.

初期固着剤の組成物において、２０〜４５重量％の熱可塑性ポリマーが選択されることが好ましく、ガラス転移温度が初期固着処理の間に作用する温度未満であるような、特に１００〜１５０℃の加熱温度未満であるようなガラス転移温度を伴うことが好ましい。   In the composition of the initial fixing agent, it is preferred that 20 to 45% by weight of the thermoplastic polymer is selected, especially such that the glass transition temperature is below the temperature at which it operates during the initial fixing process, especially between 100 and 150 ° C. It is preferred to have a glass transition temperature that is below the heating temperature.

さらに、本発明は、基板構造または基板と結合される電子構造を明示するという概念に基づく。基板構造は、本発明の基板構造、すなわち本発明の方法を用いて製造された基板構造の形態とすることができる。特に、電子部品は、発明の方法を用いて基板構造と結合される。あるいは、電子部品は、本発明の方法により基板と結合されている。   Furthermore, the invention is based on the concept of specifying a substrate structure or an electronic structure associated with the substrate. The substrate structure can be in the form of a substrate structure of the present invention, that is, a substrate structure manufactured using the method of the present invention. In particular, electronic components are bonded to the substrate structure using the method of the invention. Alternatively, the electronic component has been bonded to the substrate by the method of the present invention.

基板、特に、基板構造の基板は、第１の面および第２の面を備え、基板の第１の面で、および／または基板と対面する電子部品の第１の面で、初期固着剤の残留物が、いくつかの部分に形成される。基板構造または基板が、当該基板の第１の面が電子部品と対面して配置されるように電子部品と結合される。さらに、結合材は、基板の第１の面のいくつかの部分に塗布することができる。   The substrate, and in particular the substrate of the substrate structure, comprises a first side and a second side, wherein at the first side of the substrate and / or at the first side of the electronic component facing the substrate, an initial binder is provided. Residues are formed in some parts. A substrate structure or substrate is coupled to the electronic component such that the first side of the substrate is disposed facing the electronic component. Further, the binder may be applied to some portions of the first side of the substrate.

基板は、ＤＣＢ基板、ＰＣＢ基板、またはリードフレームとすることができる。電子部品は、半導体、ＤＣＢ基板、またはＰＣＢ基板とすることができる。初期固着剤の残留物は、はんだおよび／または接着剤の残留物とすることができる。接着剤は、当初は熱可塑性（メタ）アクリル共重合体の形態とすることができる。ほとんどの部分に対して、特に、完全に、無機充填剤粒子、特に酸化アルミニウムおよび／または酸化シリコンが、基板の第１の面に、および／または基板と対面する電子部品の面に形成される。   The substrate can be a DCB substrate, a PCB substrate, or a lead frame. The electronic component can be a semiconductor, DCB substrate, or PCB substrate. The initial sticker residue may be a solder and / or adhesive residue. The adhesive may initially be in the form of a thermoplastic (meth) acrylic copolymer. For the most part, in particular completely, the inorganic filler particles, especially aluminum oxide and / or silicon oxide, are formed on the first side of the substrate and / or on the side of the electronic component facing the substrate. .

以下、本発明を、添付の概略図を参照しつつ、実施形態の例を用いてさらに詳細に説明する。   Hereinafter, the present invention will be described in more detail with reference to the attached schematic diagrams using examples of embodiments.

基板構造を製造する方法の個々のステップを示す図である。FIG. 3 shows the individual steps of a method for manufacturing a substrate structure. 基板構造を製造する方法の個々のステップを示す図である。FIG. 3 shows the individual steps of a method for manufacturing a substrate structure. 基板構造を製造する方法の個々のステップを示す図である。FIG. 3 shows the individual steps of a method for manufacturing a substrate structure. 基板構造を製造する方法の個々のステップを示す図である。FIG. 3 shows the individual steps of a method for manufacturing a substrate structure. 基板構造を製造するためのさらなるオプションのステップを示す図である。FIG. 4 illustrates further optional steps for manufacturing a substrate structure. 基板構造を製造するためのさらなるオプションのステップを示す図である。FIG. 4 illustrates further optional steps for manufacturing a substrate structure. 実施形態の第１の形式に係る、電子部品を基板構造と結合する発明の方法の個々のステップを示す図である。FIG. 3 shows the individual steps of the inventive method of coupling an electronic component to a substrate structure according to a first type of embodiment. 実施形態の第１の形式に係る、電子部品を基板構造と結合する発明の方法の個々のステップを示す図である。FIG. 3 shows the individual steps of the inventive method of coupling an electronic component to a substrate structure according to a first type of embodiment. 実施形態の第１の形式に係る、電子部品を基板構造と結合する発明の方法の個々のステップを示す図である。FIG. 3 shows the individual steps of the inventive method of coupling an electronic component to a substrate structure according to a first type of embodiment. 実施形態のさらなる形式に係る、電子部品を基板構造と結合する発明の方法の個々のステップを示す図である。FIG. 4 shows the individual steps of the inventive method of coupling an electronic component with a substrate structure according to a further type of embodiment. 実施形態のさらなる形式に係る、電子部品を基板構造と結合する発明の方法の個々のステップを示す図である。FIG. 4 shows the individual steps of the inventive method of coupling an electronic component with a substrate structure according to a further type of embodiment. 実施形態のさらなる形式に係る、電子部品を基板構造と結合する発明の方法の個々のステップを示す図である。FIG. 4 shows the individual steps of the inventive method of coupling an electronic component with a substrate structure according to a further type of embodiment.

以下、同様の部品および同様に動作する部品に対して同じ参照番号が使用される。   In the following, the same reference numbers will be used for similar and similarly operating parts.

図１は基板２０を示す。基板２０は、構造化された形態で存在し、すなわち、個々の基板部分２１、２１’が形成される。基板は、例えば、リードフレーム、ＤＣＢ基板、またはＰＣＢ基板の形態とすることができる。さらに、基板２０の一方または両方の面をコーティング処理することができる。コーティングは、例えば、金属コーティング、または金属合金コーティングとすることができる。基板２０は、第１の面２２と、第２の面２３とを有する。図示した例において、基板２０の第１の面２２は、当該基板２０の反対側の第２の面２３と平行になるよう設計される。   FIG. 1 shows a substrate 20. Substrate 20 is present in a structured form, i.e., individual substrate portions 21, 21 'are formed. The substrate can be, for example, in the form of a lead frame, DCB substrate, or PCB substrate. Further, one or both surfaces of the substrate 20 can be coated. The coating can be, for example, a metal coating or a metal alloy coating. The substrate 20 has a first surface 22 and a second surface 23. In the illustrated example, the first surface 22 of the substrate 20 is designed to be parallel to a second surface 23 on the opposite side of the substrate 20.

図２は、基板２０の第１の面２２上への結合材２５の塗布を示す。結合材２５は、はんだ、導電接着剤、または接着膜の形態とすることができる。特に、結合材２５は、焼結ペーストの形態をとる。焼結ペーストは、銀、または銀合金を含むことが好ましい。結合材２５は、印刷、特に、スクリーン印刷、および／またはステンシル印刷によって、ならびに／もしくはスキージーを用いて、ならびに／もしくは、スプレー、および／または噴射、および／または分注処理によって、基板２０の第１の面２２上に塗布することができる。   FIG. 2 shows the application of the binder 25 on the first side 22 of the substrate 20. The bonding material 25 can be in the form of a solder, a conductive adhesive, or an adhesive film. In particular, the binder 25 takes the form of a sintered paste. The sintering paste preferably contains silver or a silver alloy. The binder 25 may be formed on the substrate 20 by printing, in particular by screen printing and / or stencil printing, and / or by using a squeegee, and / or by spraying and / or spraying and / or dispensing processes. 1 can be applied on the surface 22.

基板構造１０の製造状況において、結合材２５は、電子部品５０、５１との結合をもたらすように作用する。特に、結合材２５は、基板構造１０を電子部品５０、５１と恒久的に結合するよう機能する。   In the manufacturing situation of the substrate structure 10, the bonding material 25 acts to provide bonding with the electronic components 50, 51. In particular, the bonding material 25 functions to permanently bond the substrate structure 10 to the electronic components 50, 51.

図３は、初期固着剤３０を、結合材２５の側ないし側部で基板２０の第１の面２２上に塗布する方法を示す。初期固着剤３０は、滴の形態で基板２０の第１の面２２上に塗布される。図示した例において、初期固着剤３０の４つの滴が塗布されている。初期固着剤３０は、左側の基板部分２１上と、右側の基板部分２１’上との両方に塗布される。初期固着剤３０は、結合材２５の側辺ないし側縁２６付近の基板２０の第１の面２２上に塗布される。ギャップが、初期固着剤３０と、結合材２５の側縁２６との間に形成され得る。さらに、初期固着剤３０を、棒の形態で塗布することも考えられる。さらに、初期固着剤３０で、結合剤２５の全ての側縁を取り囲むことが可能である。この状況において、結合材２５が初期固着剤３０によって全ての側縁を取り囲まれた場合、ギャップが初期固着剤３０と結合材２５との間に形成されることも考えられる。初期固着剤３０は、以下の組成物を含むことが好ましい。
・２０〜４５重量％の熱可塑性ポリマー、特に、例えば、６０℃〜１２０℃のガラス転移温度を有する熱可塑性（メタ）アクリル共重合体。
・４０〜７０重量％の有機溶媒。前記有機溶媒は、３０〜１００重量％のテルピネオールを含むことが好ましい。
・１０〜２５重量％の無機充填剤粒子であって、粒子サイズ（ｄ５０）が５〜２０μｍ、特に５〜１０μｍである粒子。無機充填剤粒子は、酸化アルミニウムおよび／または二酸化ケイ素の形態であることが好ましい。
・０〜０．５重量％の他の添加物、例えば、湿潤剤。 FIG. 3 shows a method of applying the initial adhesive 30 on the first surface 22 of the substrate 20 on the side of the bonding material 25. The initial fixative 30 is applied on the first surface 22 of the substrate 20 in the form of drops. In the example shown, four drops of the initial fixative 30 have been applied. The initial adhesive 30 is applied to both the left substrate portion 21 and the right substrate portion 21 '. The initial adhesive 30 is applied to the first surface 22 of the substrate 20 near the side edge or the side edge 26 of the bonding material 25. A gap may be formed between the initial bond 30 and the side edge 26 of the binder 25. Furthermore, it is conceivable to apply the initial fixing agent 30 in the form of a stick. Furthermore, it is possible for the initial binder 30 to surround all the side edges of the binder 25. In this situation, if the bonding material 25 is surrounded on all side edges by the initial bonding agent 30, a gap may be formed between the initial bonding agent 30 and the bonding material 25. The initial fixing agent 30 preferably contains the following composition.
20-45% by weight of a thermoplastic polymer, in particular a thermoplastic (meth) acrylic copolymer having a glass transition temperature of e.g.
-40-70% by weight of organic solvent. The organic solvent preferably contains 30 to 100% by weight of terpineol.
10 to 25% by weight of inorganic filler particles having a particle size (d50) of 5 to 20 μm, in particular 5 to 10 μm. Preferably, the inorganic filler particles are in the form of aluminum oxide and / or silicon dioxide.
0-0.5% by weight of other additives, for example wetting agents.

初期固着剤３０は、分注、浸漬、または噴射処理によって、基板２０の第１の面２２上に塗布することができる。初期固着剤３０は、半球状接着点の形態で基板２０の第１の面２２上に塗布されることが好ましい。初期固着剤３０の厚さｄＶＦ１は、結合材２５の厚さｄＫＭよりも値が大きい。言い換えると、初期固着剤３０の厚さｄＶＦ１は、結合材２５の厚さｄＫＭよりも大きい。図３において、初期固着剤３０は、非乾燥状態であり、より詳しくは乾燥していない。 The initial adhesive 30 can be applied on the first surface 22 of the substrate 20 by dispensing, dipping, or spraying. Preferably, the initial binder 30 is applied on the first surface 22 of the substrate 20 in the form of a hemispherical adhesive point. The thickness d VF1 of the initial fixing agent 30 is larger than the thickness d KM of the binder 25. In other words, the thickness d VF1 of the initial fixing agent 30 is larger than the thickness d KM of the bonding material 25. In FIG. 3, the initial fixing agent 30 is in a non-dried state, and is not dried in more detail.

図４は基板構造１０を示しており、本方法のこの段階では、当該基板構造１０は、基板２０、および結合材２５と共に初期乾燥状態にある初期固着剤３０を備えている。初期固着剤３０および結合材２５の乾燥は、１００〜１５０℃の対象物温度で、２〜３０分間、実行することが好ましい。初期乾燥処理、すなわち乾燥処理の後、初期固着剤３０の厚さｄＶＦ１は、乾燥処理前の初期固着剤３０の厚さｄＶＦ１より薄くなる。したがって、厚さｄＶＦ１は乾燥処理の過程で減少する。しかしながら、乾燥処理の後でも、厚さｄＶＦ２は結合材２５の厚さｄＫＭより大きいことが好ましい。 FIG. 4 shows a substrate structure 10, which at this stage of the method comprises a substrate 20 and an initial binder 30 in an initial dry state with a binder 25. The drying of the initial fixing agent 30 and the binder 25 is preferably performed at an object temperature of 100 to 150 ° C. for 2 to 30 minutes. After the initial drying process, that is, after the drying process, the thickness d VF1 of the initial fixing agent 30 is smaller than the thickness d VF1 of the initial fixing agent 30 before the drying process. Therefore, the thickness d VF1 decreases during the drying process. However, it is preferable that the thickness d VF2 is larger than the thickness d KM of the bonding material 25 even after the drying process.

基板構造１０は、図４に示されるように、中間生成物であり、例えば、第１の製造機械から、別の製造機械に搬送され得る。さらに、この中間生成物は、別の製造設備に、または顧客に搬送されることが考えられる。   The substrate structure 10 is an intermediate product, as shown in FIG. 4, and can be transported, for example, from a first manufacturing machine to another manufacturing machine. Further, this intermediate product could be transported to another manufacturing facility or to a customer.

図５によれば、任意選択的に、基板構造１０が移送要素３５を備えるよう処理することができる。移送要素３５は、例えば、移送膜の形態とすることができる。基板２０は、塗布された初期固着剤３０および塗布された結合材２５を伴い、基板２０の第１の面２２が支持部材３５と対面して位置するように、移送要素３５に対して配置される。言い換えると、基板２０の第１の面２２は、移送要素３５に向けられる。図示した例において、少なくとも初期固着剤３０は、移送要素３５と接着結合される。結合材２５が、同様に、移送要素３５と接着結合することも可能である。   According to FIG. 5, optionally, the substrate structure 10 can be processed to include a transfer element 35. The transfer element 35 can be, for example, in the form of a transfer membrane. The substrate 20 is positioned relative to the transfer element 35 with the applied initial binder 30 and the applied binder 25 such that the first surface 22 of the substrate 20 is located facing the support member 35. You. In other words, the first surface 22 of the substrate 20 is directed to the transfer element 35. In the example shown, at least the initial binder 30 is adhesively bonded to the transfer element 35. It is also possible for the bonding material 25 to be adhesively bonded to the transport element 35 as well.

接着力が、初期固着剤３０と移送要素３５との間に働き、基板１０の搬送が容易になり、基板２０が、搬送中に、移送要素３５から外れないようにすることができる。しかしながら、初期固着剤３０と移送要素３５との間の接着力は、構成要素が基板構造１０と結合される場合に、基板２０を、初期固着剤３０および結合材２５と共に、移送要素３５から取り外すことができるように充分に小さい。基板部分２１および基板部分２１’の両方が、移送要素３５に配置される。言い換えると、複数の基板部分２１、２１’を、適切な初期固着剤３０および結合材２５により、移送要素３５に配置することができる。   The adhesive force acts between the initial adhesive 30 and the transfer element 35 to facilitate the transfer of the substrate 10 and prevent the substrate 20 from coming off the transfer element 35 during the transfer. However, the adhesion between the initial bond 30 and the transfer element 35 may cause the substrate 20 to be removed from the transfer element 35 along with the initial bond 30 and the binder 25 when the components are bonded to the substrate structure 10. Small enough to be able to. Both the substrate part 21 and the substrate part 21 ′ are arranged on the transfer element 35. In other words, a plurality of substrate parts 21, 21 ′ can be arranged on the transfer element 35 with a suitable initial binder 30 and a binder 25.

図６では、基板構造１０が示され、当該基板構造１０は、ノズル４０を用いて移送要素３５から取り外すことができる。初期固着剤３０および結合材２５を伴う基板２０の移送要素３５からの取り外しは、例えば、ノズル４０を用いて、ピックアンドプレース処理の要領で、実行することができる。   In FIG. 6, a substrate structure 10 is shown, which can be removed from the transfer element 35 using a nozzle 40. Removal of the substrate 20 from the transfer element 35 with the initial binder 30 and binder 25 can be performed, for example, using a nozzle 40 in a pick-and-place manner.

図７〜図９は、本発明の実施形態の第１の形式による、電子部品５０を基板構造１０と結合する方法を示す。この場合、基板構造１０は、まず、ノズル４０を用いて、移送要素３５から取り外される。ついで、ノズル４０を用いて、基板構造１０は、電子部品５０上に位置付けられ、基板２０の第１の面２２が電子部品５０と対面して配置される。ノズル４０は、基板２０の第２の面２３に作用する。図７に示されるように、基板構造１０は、電子部品５０上にセットされ、初期固着剤３０だけが電子部品５０と接し、すなわち、初期固着剤３０だけが電子部品５０と結合する。図示した部品５０は、例えば、シリコン半導体の形態とすることができる。ギャップが結合材２５と部品５０との間に形成され、当該ギャップは、初期固着剤と結合材との厚さが異なることにより形成される。   7 to 9 show a method of coupling an electronic component 50 with a substrate structure 10 according to a first form of the embodiment of the present invention. In this case, the substrate structure 10 is first detached from the transfer element 35 using the nozzle 40. Next, the substrate structure 10 is positioned on the electronic component 50 by using the nozzle 40, and the first surface 22 of the substrate 20 is arranged to face the electronic component 50. The nozzle 40 acts on the second surface 23 of the substrate 20. As shown in FIG. 7, the substrate structure 10 is set on the electronic component 50, and only the initial adhesive 30 contacts the electronic component 50, that is, only the initial adhesive 30 bonds to the electronic component 50. The illustrated component 50 can be, for example, in the form of a silicon semiconductor. A gap is formed between the bonding material 25 and the component 50, and the gap is formed by different thicknesses of the initial binder and the bonding material.

図８では、ノズル４０は、基板構造１０からすでに取り外されている。１００〜１５０℃の熱が加えられる。これによって、初期固着剤３０が活性化され、その結果、基板構造１０と電子部品５０との初期固着が実行される。初期固着処理は、基板２０、特に、基板２０の第１の面２２と、電子部品５０、特に基板２０と対面する電子部品５０の面５２との間の接着結合の形式であることが好ましく、かかる接着結合は、初期固着剤３０を用いて生成される。   In FIG. 8, the nozzle 40 has been removed from the substrate structure 10. Heat of 100-150 ° C is applied. Thereby, the initial fixing agent 30 is activated, and as a result, the initial fixing between the substrate structure 10 and the electronic component 50 is performed. The initial bonding process is preferably in the form of an adhesive bond between the substrate 20, in particular the first surface 22 of the substrate 20, and the electronic component 50, in particular the surface 52 of the electronic component 50 facing the substrate 20, Such an adhesive bond is created using the initial binder 30.

この時点で、初期乾燥処理、すなわち、図４に示したような乾燥ステップはオプションであることに留意されたい。初期固着剤３０を基板２０の第１の面２２上に塗布し、その直後に、電子部品５０、５１と基板構造１０との初期固着を実行することもできる。移送要素３５の設置は、この場合では不要である。この場合、初期固着剤３０が、電子部品５０、５１の装着の直前に、すなわち、電子部品５０、５１の基板２０上への装着の直前に塗布される。   Note that at this point, the initial drying process, ie, the drying step as shown in FIG. 4, is optional. The initial fixing agent 30 may be applied on the first surface 22 of the substrate 20, and immediately thereafter, the initial fixing between the electronic components 50 and 51 and the substrate structure 10 may be performed. The installation of the transfer element 35 is not necessary in this case. In this case, the initial fixing agent 30 is applied immediately before mounting the electronic components 50 and 51, that is, immediately before mounting the electronic components 50 and 51 on the substrate 20.

初期固着の後、図８に図示されるように、基板構造１０と電子部品５０との実際の結合を実行する。「結合」は、基板構造１０と電子部品５１との接合として理解されよう。結合は、はんだ付け、プレス、または焼結処理によって実行することができる。ここで、基板構造１０は、処理炉で、例えば、加圧焼結炉、リフロー炉またはラミネート窯で、電子部品５０と共に焼結されると考えられる。加圧焼結処理の間、初期固着剤３０の有機／ポリマー成分は、そのほとんどが蒸発する。言い換えると、結合処理の間、または結合処理の後、初期固着剤３０は、少なくとも部分的に取り除かれ、特に、焼失および／または溶解される。熱分解によって、および／または生じる気化によって、初期固着剤３０の有機／ポリマー成分を取り除く。したがって、焼結、および／またはプレス、および／またははんだ付け処理の後、基板２０と部品５０との間の接着結合は、もはや形成されていない。   After the initial bonding, the actual bonding between the substrate structure 10 and the electronic component 50 is performed as shown in FIG. “Coupling” will be understood as the joining of the substrate structure 10 and the electronic component 51. Bonding can be performed by a soldering, pressing, or sintering process. Here, it is considered that the substrate structure 10 is sintered together with the electronic component 50 in a processing furnace, for example, in a pressure sintering furnace, a reflow furnace, or a laminating furnace. During the pressure sintering process, most of the organic / polymer components of the initial binder 30 evaporate. In other words, during or after the bonding process, the initial binder 30 is at least partially removed, in particular burned out and / or dissolved. The organic / polymer component of the initial binder 30 is removed by pyrolysis and / or by the resulting vaporization. Thus, after sintering and / or pressing and / or soldering, the adhesive bond between the substrate 20 and the component 50 is no longer formed.

電子部品５０の上には、および／または基板２０の上には、特に基板２０の第１の面２２の上には、残留物３１、特に有機初期固着剤３０の無機充填剤材料のみが、ほとんどの部分に対して、または好ましくは排他的に形成される。図示した例において、初期固着剤３０の残留物３１は、電子部品５０の第１の面５２上に形成される。   On the electronic component 50 and / or on the substrate 20, especially on the first side 22 of the substrate 20, only the residue 31, especially the inorganic filler material of the organic initial binder 30, Most or preferably exclusively. In the illustrated example, the residue 31 of the initial adhesive 30 is formed on the first surface 52 of the electronic component 50.

図１０〜図１２は、実施形態のさらなる例に係る、電子部品５０および５１を基板構造１０と結合する方法を示す。   10 to 12 show a method of connecting the electronic components 50 and 51 to the substrate structure 10 according to a further example of the embodiment.

図１０は、基板構造１０を示しており、当該基板構造１０は、２つの基板部分２１および２１’を備え、第１の電子部品５０および第２の電子部品５１と適合される。基板部分２１および基板部分２１’の両方は、結合材２５と、結合材２５の側ないし側部に形成された初期固着剤３０とを備える。   FIG. 10 shows a substrate structure 10, which comprises two substrate parts 21 and 21 ′ and is matched with a first electronic component 50 and a second electronic component 51. Both the substrate portion 21 and the substrate portion 21 ′ include a bonding material 25 and an initial adhesive 30 formed on the side of the bonding material 25.

第１の電子部品５０および第２の電子部品５１の両方が、基板構造１０に対してノズル４０および４０’を用いて位置付けられ、基板２０の第１の面２２が、第１の電子部品５０および第２の電子部品５１と対面して配置される。第１の電子部品５０は、シリコン半導体の形態とすることができる。第２の電子部品５１は、第１の面５２および第２の面５３の両方にコーティング５４を有する。   Both the first electronic component 50 and the second electronic component 51 are positioned with respect to the substrate structure 10 using the nozzles 40 and 40 ′, and the first surface 22 of the substrate 20 is connected to the first electronic component 50. And the second electronic component 51. The first electronic component 50 can be in the form of a silicon semiconductor. The second electronic component 51 has a coating 54 on both the first surface 52 and the second surface 53.

図１１に示されるように、基板構造１０と第１の電子部品５０および第２の電子部品５１との初期固着は、基板２０の第１の面２２のいくつかの部分に塗布された初期固着剤３０により実行される。図１〜図９に関連してすでに記載した、初期固着剤３０に関する補足説明を適用する。初期固着剤３０による初期固着のために、基板構造１０に、第１の電子部品５０および第２の電子部品５１とともに、熱、特に１００〜１５０℃の温度の熱が加えられる。接着結合が、第１の電子部品５０と基板２０との間に、特に、第１の電子部品５０と基板２０の第１の面２２との間に形成される。さらに、接着結合が、第２の電子部品５１と基板２０、特に、基板２０の第１の面２２との間に形成される。   As shown in FIG. 11, the initial bonding between the substrate structure 10 and the first electronic component 50 and the second electronic component 51 is based on the initial bonding applied to some portions of the first surface 22 of the substrate 20. This is performed by the agent 30. The supplementary description of the initial fixing agent 30 already described with reference to FIGS. 1 to 9 applies. For the initial fixing by the initial fixing agent 30, heat is applied to the substrate structure 10 together with the first electronic component 50 and the second electronic component 51, particularly heat at a temperature of 100 to 150 ° C. An adhesive bond is formed between the first electronic component 50 and the substrate 20, in particular, between the first electronic component 50 and the first surface 22 of the substrate 20. Furthermore, an adhesive bond is formed between the second electronic component 51 and the substrate 20, in particular the first surface 22 of the substrate 20.

初期固着の後、結合が、第１の電子部品５０および第２の電子部品５１と基板構造１０との間で実行される。結合処理、好ましくは、焼結処理の間、初期固着剤３０が、少なくともいくつかの部分から取り除かれ、特に、焼失および／または溶解される。   After the initial bonding, the bonding is performed between the first electronic component 50 and the second electronic component 51 and the substrate structure 10. During the bonding process, preferably the sintering process, the initial binder 30 is removed from at least some parts, in particular burned out and / or melted.

図１２に示されるように、初期固着剤３０の残留物３１のみが、基板２０の第１の面２２に残る。初期固着剤３０の前記残留物３１は、当初の初期固着剤３０の無機充填剤材料の形態であることが好ましい。   As shown in FIG. 12, only the residue 31 of the initial fixing agent 30 remains on the first surface 22 of the substrate 20. Said residue 31 of the initial fixing agent 30 is preferably in the form of an inorganic filler material of the initial initial fixing agent 30.

図１２において、電子部品５０は、第２の電子部品５１と共に、基板構造１０と完全に結合される。基板構造１０は、第１の面２２と第２の面２３とを伴う基板２０を有する。当初の初期固着剤３０の残留物３１は、基板２０の第１の面２２に配置される。   In FIG. 12, the electronic component 50 is completely coupled to the substrate structure 10 together with the second electronic component 51. The substrate structure 10 has a substrate 20 with a first side 22 and a second side 23. A residue 31 of the initial initial binder 30 is disposed on the first surface 22 of the substrate 20.

この時点で、図１〜図１２に係る実施形態の形式と関連して説明した、上記の全ての方法ステップおよび要素は、個別に、または任意の組み合わせで、特に、図に示した詳細は、本発明にとって本質的なものとして特許請求されることに留意されたい。請求項１〜８の１つに係る方法ステップと、請求項２１〜３１の１つに係る方法ステップとの任意の選択された組み合わせもまた可能である。   At this point, all the method steps and elements described above, which have been described in connection with the form of the embodiment according to FIGS. 1 to 12, individually or in any combination, in particular the details shown in the figures, Note that it is claimed as essential to the invention. Any selected combination of the method steps according to one of the claims 1 to 8 and the method steps according to one of the claims 21 to 31 is also possible.

１０、１０’ 基板構造
２０ 基板
２１、２１’ 基板部分
２２ 基板の第１の面
２３ 基板の第２の面
２５ 結合材
２６ 側縁
３０ 初期固着剤
３５ 移送要素（移送膜）
４０、４０’ ノズル
５０ 電子部品
５１ 電子部品
５２ 電子部品の第１の面
５３ 電子部品の第２の面
５４ コーティング
ｄＶＦ１ 乾燥前の初期固着剤の厚さ
ｄＶＦ２ 乾燥後の初期固着剤の厚さ
ｄＫＭ 結合材の厚さ 10, 10 'Substrate structure 20 Substrate 21, 21' Substrate portion 22 First surface of substrate 23 Second surface of substrate 25 Binder 26 Side edge 30 Initial binder 35 Transfer element (transfer film)
40, 40 'Nozzle 50 Electronic component 51 Electronic component 52 First surface of electronic component 53 Second surface of electronic component 54 Coating d Thickness of initial adhesive before drying VF1 d Thickness of initial adhesive after drying VF2 D Thickness of KM binder

Claims (25)

基板構造（１０）を製造する方法であって、電子部品（５０；５１）と結合するため、第１の面（２２）および第２の面（２３）を有する基板（２０）を準備するステップと、
前記基板（２０）の前記第１の面（２２）のいくつかの部分上へ初期固着剤（３０）を塗布するステップと、
前記基板（２０）の前記第１の面（２２）のいくつかの部分上に結合材（２５）を塗布するステップとを含み、
前記基板（２０）を、塗布された初期固着剤（３０）と共に移送要素（３５）上に位置付けるステップであって、前記基板（２０）の前記第１の面（２２）が前記移送要素（３５）と対面して配置され、前記初期固着剤（３０）および／または前記結合材（２５）が、前記移送要素（３５）と少なくとも接着結合されるステップをさらに含む、方法。 A method of manufacturing a substrate structure (10), comprising providing a substrate (20) having a first surface (22) and a second surface (23) for bonding with an electronic component (50; 51). When,
Applying an initial binder (30) onto some portion of the first side (22) of the substrate (20);
Applying a binder (25) onto some portion of said first surface (22) of said substrate (20);
Positioning the substrate (20) together with the applied initial binder (30) on a transfer element (35), wherein the first surface (22) of the substrate (20) comprises the transfer element (35). ), Further comprising the step of at least adhesively bonding the initial binder (30) and / or the binder (25) with the transfer element (35). 前記結合材（２５）が焼結ペーストであることを特徴とする、請求項１に記載の方法。   Method according to claim 1, characterized in that the binder (25) is a sintered paste. 前記基板（２０）上に塗布された前記初期固着剤（３０）が乾燥されることを特徴とする、請求項１または請求項２に記載の方法。   Method according to claim 1 or 2, characterized in that the initial binder (30) applied on the substrate (20) is dried. 前記初期固着剤（３０）が、前記結合材（２５）の側で、前記基板（２０）の前記第１の面（２２）の少なくともいくつかの部分上に塗布されることを特徴とする、請求項２または請求項３に記載の方法。   Characterized in that the initial binder (30) is applied on at least some parts of the first surface (22) of the substrate (20) on the side of the binder (25). A method according to claim 2 or claim 3. 前記初期固着剤（３０）が、前記基板（２０）の前記第１の面（２２）上に塗布されて、当該初期固着剤（３０）が、前記結合材（２５）より厚くなることを特徴とする、請求項２〜４のいずれか一項に記載の方法。   The initial binder (30) is applied on the first surface (22) of the substrate (20) such that the initial binder (30) is thicker than the binder (25). The method according to any one of claims 2 to 4, wherein 基板構造（１０）であって、電子部品（５０；５１）と結合するために、第１の面（２２）および第２の面（２３）を有する基板（２０）を備え、初期固着剤（３０）が、前記基板（２０）の前記第１の面（２２）のいくつかの部分上に塗布され、
結合材（２５）が、前記基板（２０）の前記第１の面（２２）のいくつかの部分上に塗布され、
移送要素（３５）が、前記初期固着剤（３０）および／または前記結合材（２５）で少なくとも接着結合される、基板構造（１０）。 A substrate structure (10), comprising: a substrate (20) having a first surface (22) and a second surface (23) for bonding with an electronic component (50; 51); 30) is applied on some portion of the first side (22) of the substrate (20);
A binder (25) is applied on some portion of the first side (22) of the substrate (20);
The substrate structure (10), wherein the transfer element (35) is at least adhesively bonded with the initial binder (30) and / or the bonding material (25). 前記基板（２０）が、ＤＣＢ基板、ＰＣＢ基板、またはリードフレームであることを特徴とする、請求項６に記載の基板構造（１０）。 The substrate structure (10) according to claim 6, wherein the substrate ( 20 ) is a DCB substrate, a PCB substrate, or a lead frame. 前記結合材（２５）が焼結ペーストであることを特徴とする、請求項６に記載の基板構造（１０）。   The substrate structure (10) according to claim 6, wherein the binder (25) is a sintered paste. 前記初期固着剤（３０）が、前記結合材（２５）の側で、前記基板（２０）の前記第１の面（２２）の少なくともいくつかの部分上に塗布されることを特徴とする、請求項８に記載の基板構造（１０）。   Characterized in that the initial binder (30) is applied on at least some parts of the first surface (22) of the substrate (20) on the side of the binder (25). A substrate structure (10) according to claim 8. 前記初期固着剤（３０）が、前記結合材（２５）より厚いことを特徴とする、請求項８または請求項９に記載の基板構造（１０）。   The substrate structure (10) according to claim 8 or 9, wherein the initial binder (30) is thicker than the binder (25). 電子部品（５０；５１）を、請求項１〜５のいずれか一項に記載の方法により製造される基板構造（１０；１０’）と、結合する方法であって、
前記基板構造（１０；１０’）と前記電子部品（５０；５１）とを、前記基板（２０）の前記第１の面（２２）が前記電子部品（５０；５１）と対面して配置されるように互いに位置付けるステップと、
前記初期固着剤（３０）を前記基板（２０）の前記第１の面（２２）のいくつかの部分上に塗布することによって、前記基板構造（１０；１０’）を前記電子部品（５０；５１）上に初期固着するステップと、
前記基板構造（１０）を前記電子部品（５０；５１）と結合するステップとを含む、方法。 A method for joining an electronic component (50; 51) to a substrate structure (10; 10 ') manufactured by the method according to any one of claims 1 to 5, comprising:
The substrate structure (10; 10 ') and the electronic component (50; 51) are arranged such that the first surface (22) of the substrate (20) faces the electronic component (50; 51). Positioning each other such that
The substrate structure (10; 10 ') is applied to the electronic component (50;) by applying the initial binder (30) onto some portion of the first surface (22) of the substrate (20). 51) initial bonding on
Coupling the substrate structure (10) with the electronic component (50; 51). 前記電子部品（５０；５１）が、半導体、ＤＣＢ基板、またはＰＣＢ基板であることを特徴とする、請求項１１に記載の方法。   The method according to claim 11, wherein the electronic component (50; 51) is a semiconductor, a DCB substrate, or a PCB substrate. 前記基板構造（１０；１０’）を前記電子部品（５０；５１）と初期固着する前記ステップの間に熱が加えられることを特徴とする、請求項１１または請求項１２に記載の方法。   13. The method according to claim 11, wherein heat is applied during the step of initially securing the substrate structure (10; 10 ') to the electronic component (50; 51). 前記電子部品（５０；５１）と結合される場合に、前記基板構造（１０；１０’）が、前記電子部品（５０；５１）と共に焼結、プレス、またははんだ付けされることを特徴とする、請求項１１〜１３のいずれか一項に記載の方法。   When combined with the electronic component (50; 51), the substrate structure (10; 10 ') is sintered, pressed, or soldered with the electronic component (50; 51). 14. The method according to any one of claims 11 to 13. 前記結合するステップの間または後に、前記初期固着剤（３０）が、少なくとも部分的に取り除かれることを特徴とする、請求項１１〜１４のいずれか一項に記載の方法。   15. The method according to any of claims 11 to 14, characterized in that during or after the bonding step, the initial fixative (30) is at least partially removed. 電子部品（５０；５１）を、第１の面（２２）および第２の面（２３）を有する基板（２０）と結合する方法であって、
第１の面（５２）および第２の面（５３）を有する電子部品（５０；５１）を準備するステップと、
初期固着剤（３０）を、前記基板（２０）の前記第１の面（２２）のいくつかの部分上に塗布するステップと、
結合材（２５）を、前記基板（２０）の前記第１の面（２２）のいくつかの部分上に塗布するステップとを含み、
移送要素（３５）が、前記初期固着剤（３０）および／または前記結合材（２５）で少なくとも接着結合されるステップをさらに含む、方法。 A method of combining an electronic component (50; 51) with a substrate (20) having a first side (22) and a second side (23),
Providing an electronic component (50; 51) having a first side (52) and a second side (53);
Applying an initial binder (30) onto some portion of the first side (22) of the substrate (20);
Applying a binder (25) onto some portion of said first surface (22) of said substrate (20);
The method further comprising the step of: a transfer element (35) being at least adhesively bonded with the initial binder (30) and / or the bonding material (25). 前記塗布された初期固着剤（３０）、および／または前記塗布された結合材（２５）が乾燥させられることを特徴とする、請求項１６に記載の方法。   Method according to claim 16, characterized in that the applied initial binder (30) and / or the applied binder (25) are dried. 前記初期固着剤（３０）が、前記基板（２０）の前記第１の面（２２）上に、当該初期固着剤（３０）が前記結合材（２５）より厚くなるように塗布されることを特徴とする、請求項１６または請求項１７に記載の方法。   Wherein said initial binder (30) is applied on said first surface (22) of said substrate (20) such that said initial binder (30) is thicker than said binder (25). The method according to claim 16 or claim 17, characterized in that it is characterized by: 前記電子部品（５０；５１）を前記基板（２０）と、前記電子部品（５０；５１）の前記第１の面（５２）が前記基板（２０）と対面して配置されるように互いに位置付けるステップと、
前記電子部品（５０；５１）を、前記初期固着剤（３０）をいくつかの部分上に塗布することによって前記基板（２０）に初期固着するステップと、
前記電子部品（５０；５１）を前記基板（２０）と結合するステップとを含むことを特徴とする、請求項１６〜１７のいずれか一項に記載の方法。 The electronic component (50; 51) is positioned relative to the substrate (20) such that the first surface (52) of the electronic component (50; 51) faces the substrate (20). Steps and
Initial fixing the electronic component (50; 51) to the substrate (20) by applying the initial fixing agent (30) on some parts;
Bonding the electronic component (50; 51) to the substrate (20). 前記電子部品（５０；５１）を前記基板（２０）と初期固着する前記ステップの間に熱が加えられることを特徴とする、請求項１９に記載の方法。   20. The method of claim 19, wherein heat is applied during the step of initially securing the electronic component (50; 51) to the substrate (20). 前記基板（２０）と結合される場合に、前記電子部品（５０；５１）が、前記基板（２０）と共に焼結、プレス、またははんだ付けされることを特徴とする、請求項１９または請求項２０に記載の方法。   20. The electronic component (50; 51), when combined with the substrate (20), is sintered, pressed or soldered with the substrate (20). 20. The method according to 20. 前記結合するステップの間または後に、前記初期固着剤（３０）が、少なくとも部分的に取り除かれることを特徴とする、請求項１９〜２１のいずれか一項に記載の方法。   22. The method according to any one of claims 19 to 21, wherein during or after the bonding step, the initial fixative (30) is at least partially removed. 電子部品（５０；５１）であって、請求項１１〜１５のいずれか一項に記載の方法で基板構造（１０；１０’）と結合され、または、請求項１６〜２２のいずれか一項に記載の方法で基板（２０）と結合され、前記基板（２０）が、第１の面（２２）および第２の面（２３）を備え、初期固着剤（３０）の残留物（３１）が、前記基板（２０）の前記第１の面（２２）の、いくつかの部分上に形成され、前記基板構造（１０；１０’）または前記基板（２０）が、前記電子部品（５０；５１）と、前記基板（２０）の前記第１の面（２２）が前記電子部品（５０；５１）と対面して配置されるように結合される、電子部品（５０；５１）。   An electronic component (50; 51) coupled to a substrate structure (10; 10 ') by the method according to any one of claims 11 to 15, or an electronic component (50; 51). The substrate (20) comprising a first surface (22) and a second surface (23), the residue (31) of an initial binder (30) Is formed on some part of the first surface (22) of the substrate (20), and the substrate structure (10; 10 ') or the substrate (20) is formed on the electronic component (50; 51) and an electronic component (50; 51) coupled such that the first surface (22) of the substrate (20) is arranged to face the electronic component (50; 51). 結合材（２５）が、前記基板（２０）の前記第１の面（２２）のいくつかの部分上に塗布されることを特徴とする、請求項２３に記載の電子部品（５０；５１）。   24. Electronic component (50; 51) according to claim 23, characterized in that a binder (25) is applied on some parts of the first side (22) of the substrate (20). . 前記基板（２０）が、ＤＣＢ基板、ＰＣＢ基板、またはリードフレームであり、および／または前記電子部品（５０；５１）が、半導体、ＤＣＢ基板、またはＰＣＢ基板であり、および／または前記初期固着剤（３０）の前記残留物（３１）が、はんだ、および／または接着剤の前記残留物であることを特徴とする、請求項２３または請求項２４に記載の電子部品（５０；５１）。
The substrate (20) is a DCB substrate, a PCB substrate, or a lead frame; and / or the electronic component (50; 51) is a semiconductor, a DCB substrate, or a PCB substrate, and / or the initial bonding agent. The electronic component (50; 51) according to claim 23 or claim 24, wherein the residue (31) of (30) is the residue of solder and / or adhesive.
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