12481551248155
玖、發明說明 先則技術、内容、實施方式及圖式簡單說明) (發明說明應敘明··發明所屬之技術領域、 技術領域 广,、係關於一種製造液晶顯示器用薄膜電晶體或非晶 貝石夕太陽電料各種半導體薄膜元件所採用之雙極型靜電 夾具，可藉由簡單的電極圖案在晶圓吸附區域之大致全體 區域獲得安定均等之吸附力。 先前技術 评電夹具係藉由作用在電極和晶圓之間的庫命力而使晶 :吸附在台上者，比機械式夾具可使晶圓下面大致全面密 、在台上’晶圓之冷卻性能優異’因此習知以來多用於半 :體製造裝置。且’前述晶電夾具有單極式和雙極式，其 寸，為早極式靜電夾具由於反應室内若不產生等離子體則 =引起吸附m用於等離子體處理裝χ，而雙極 ，靜電夾具不須產生等離子體即可進行吸附。 第圖為白知之靜電夾具之電極圖案俯視圖。該靜電夾呈 =面之絕緣體内部埋設有正負一對同心圓形電極(電 , lb之構成，该一方之同心圓形電極501a形 ’另—方之同心圓形電極5〇lb形成負極。且，該等 i:二形電極5〇la、5〇lb係通過靜電夾具500之晶圓吸附區 2全體區，而形成。前述正極侧之同心圓形電極501a係 ,、 。~方向形成之直線部502a，和從該直線部502a 以枝狀且同心圓w μ & t ^ y L伸出之稷數圓弧部5 0 3 a，且全體以形 η 〇广之方式相對配設者。相對之電極501a、50 lb彼此以 农外周連接。 (2) 1248155玖, invention description, first-hand technology, content, implementation method and simple description of the diagram) (The invention description should be clarified · The technical field and technical field of the invention belong to a thin film transistor or amorphous for liquid crystal display The bipolar electrostatic chuck used in various semiconductor thin film components of Bayesian Solar Materials can obtain stable and uniform adsorption force in a substantially entire area of the wafer adsorption region by a simple electrode pattern. The force acting between the electrode and the wafer causes the crystal to be adsorbed on the stage. Compared with the mechanical fixture, the underside of the wafer can be substantially completely dense, and the cooling performance of the wafer is excellent on the stage. It is mostly used for semi-body manufacturing devices. And 'the above-mentioned crystal clips have unipolar and bipolar type, and the inch is an early-electrode electrostatic jig. If no plasma is generated in the reaction chamber, then the adsorption m is used for plasma treatment. Mounting, and bipolar, electrostatic fixture can be adsorbed without generating plasma. The figure is a top view of the electrode pattern of the electrostatic fixture of Baizhi. The inside of the body is embedded with a pair of concentric circular electrodes (electrical, lb, the concentric circular electrode 501a of the one side, and the other concentric circular electrode 5〇lb forms a negative electrode. Moreover, the i: dimorph The electrodes 5〇1a and 5〇1b are formed by the entire area of the wafer adsorption zone 2 of the electrostatic chuck 500. The concentric circular electrode 501a on the positive electrode side is a linear portion 502a formed in the direction of the ~, and the straight line portion 502a The portion 502a has a plurality of circular arc portions 5 0 3 a extending in a dendritic shape and concentric circles w μ & t ^ y L, and is entirely disposed in a manner of a shape η 〇 。. The opposite electrode 501a, 50 lb They are connected to each other by the countryside. (2) 1248155
另一方面，負極侧之同心圓形電極5〇lb亦為相同之構 成，但其相異點為相對之電極5〇2b、5〇2b彼此以中心部 結合。該正極及負極之電極5〇la、5〇lb在圓弧部““、 5〇3b形成互相交織成梳齒狀。再者，該等電極π。、5〇ib 可藉由金屬蝕刻曬版法等而精密地形成。在靜電夾具5〇〇 之正負兩電極501a、501b施加電壓時，會藉由該電極圖 案501a、50 lb在晶圓吸附區域之大致全體區域產生安定 均等之吸附力。 如上述之使用靜電夾具500的晶圓台，具備用於隔開晶圓 =支持銷。如此之支持銷裝設成突出於均等地裝設在晶圓 台之銷孔。且，為了藉由支持銷確實地支持晶圓，以 度間隔裝設3支支持銷為佳（省略圖示）。 但，上述靜電夾具5〇〇中，由於以9〇度間隔形成正極及負 極之電極501&、5〇113之半徑方向直線部5〇2&、5〇213，因此 形成1個或2個支持銷孔位於該直線部5〇2a、5〇2b上，為避 免之，而必須設計電極圖案。且，形成枝狀之電極圖案5〇1& i 501b相對，且係以最外周或中心部連結之構成。因此， 會有電極圖案501a、50 lb複雜化之問題。 口而，本發明之目的在於提供一種靜電夾具，可藉由簡 單的電極圖案在晶圓吸附區域之大致全體區域獲得安定均 等之吸附力。 發明概述 本發明相關之靜電夾具，係晶圓台上的絕緣體内埋設有 正負兩％極之雙極型靜電夾具，其特徵為前述各正負電極 (3) 1248155 發__顏 具備朝半徑方向延伸之半栌On the other hand, the concentric circular electrodes 5 lb 1b on the negative electrode side are also configured identically, but the opposite points are opposite electrodes 5 〇 2b and 5 〇 2b are joined to each other at the center portion. The electrodes 5〇1, 5〇1b of the positive and negative electrodes are interlaced into a comb shape in the arc portions ““, 5〇3b. Furthermore, the electrodes are π. 5〇ib can be precisely formed by a metal etching method or the like. When a voltage is applied to the positive and negative electrodes 501a and 501b of the electrostatic chuck 5, the electrode patterns 501a and 50 lb generate stable and uniform adsorption force in substantially the entire area of the wafer adsorption region. The wafer stage using the electrostatic chuck 500 as described above is provided to separate the wafer = support pin. Such support pins are mounted to protrude from pin holes that are equally mounted on the wafer table. Further, in order to reliably support the wafer by the support pin, it is preferable to mount three support pins at intervals (not shown). However, in the above-described electrostatic chuck 5, one or two supports are formed by forming the radial direction straight portions 5〇2& and 5〇213 of the electrodes 501 & and 5〇113 of the positive and negative electrodes at intervals of 9 〇. The pin holes are located on the straight portions 5〇2a, 5〇2b, and in order to avoid this, it is necessary to design an electrode pattern. Further, the electrode patterns 5〇1 & i 501b which are formed in a dendritic shape are opposed to each other and are connected to the outermost periphery or the central portion. Therefore, there is a problem that the electrode patterns 501a, 50 lb are complicated. It is an object of the present invention to provide an electrostatic chuck which can obtain stable and uniform adsorption force in substantially the entire area of the wafer adsorption region by a simple electrode pattern. SUMMARY OF THE INVENTION An electrostatic chuck according to the present invention is a bipolar electrostatic chuck in which a positive and negative two-pole is embedded in an insulator on a wafer stage, and the positive and negative electrodes (3) 1248155 have a radial extension. Half
側以複數枝狀延伸出之同：圓:字二部直線部兩 相相對且形成直徑方向之大好―hd直線部位於互 字形部互相交織入梳齒狀而形成二上宰前述正負電極之C ^控部分之直線部以枝狀延伸出 4互相交織成梳齒狀時，會 I亥C子形 均等分佈之狀態。且，由於係心…’且形成正負極 延伸出。字形部之形狀，因此電極邛分之直線部以枝狀 正負電極施加直流電流？比較簡單。藉由在該 生作用。此時，由於正負m/、曰曰圓之間會有庫命力產 定之吸附力。、正“極均等地分佈，而獲得均等安 2次之發明相闕之靜電夾具，係晶圓台上的 α有正負兩電極之雙極型靜電夾具 水-里 具備複數之同心圓c字, 八口正負電極 子形邛，和連結鄰接徑方 的複數1 直線部，前述正負電極之C字形部互：：部 爾短直線部在各鄰接於徑方向之同極C;开：齒 ，配設成偏離圓周方向。 予形部間 即’將直線部當作短直線 h夕古令 _ L 乂將兴配叹成偏離圓用士 向之方式，可減少偏存有正負極之任一 口周方 因此’可獲得均等安定之吸附力。 /彳之部分。 其次之發明相關之靜電夾具，係上述靜電 進一步在前述直線部裝設有供給電力之接點。由、^其中 夹具之電極圖案形成具有形成枝狀之複數c字形^亥靜電 形狀’因此藉由在前述直線部裝設接點之 、對稱 %極圖案 1248155The side is extended by a plurality of branches: the circle: the two straight portions of the word are opposite to each other and form a large diameter direction - the hd straight portion is interlaced in the cross-shaped portion and combed into a comb-tooth shape to form a C of the upper and lower electrodes. When the straight portions of the control portion are intertwined into a comb-like shape by the branches, the I-C shape is uniformly distributed. Moreover, due to the core...', the positive and negative electrodes are formed to extend. The shape of the glyph is such that the direct current of the electrode is applied to the positive and negative electrodes of the branch to apply a direct current. easier. By acting in this life. At this time, due to the positive and negative m/, there is an adsorption force between the round and the circle. The electrostatic fixture that is “equal evenly distributed, and the invention of which is equal to two times of the invention, is a bipolar electrostatic fixture water with α and positive electrodes on the wafer table, and has a concentric circular c-shape. Eight positive and negative electrode sub-shaped 邛, and a complex linear portion connecting the adjacent radial sides, the C-shaped portions of the positive and negative electrodes are mutually:: the short straight portion of the ridge is adjacent to the same pole C in the radial direction; opening: teeth, with It is set to deviate from the circumferential direction. The pre-formed part is the 'straight line as a short straight line h 夕古令 _ L 乂 兴 兴 兴 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离 偏离Therefore, it is possible to obtain an equal-adhesive adsorption force. The second aspect of the invention relates to an electrostatic chuck in which the above-mentioned static electricity is further provided with a contact for supplying electric power to the straight portion. Having a complex c-shape of a dendritic shape, and thus forming a symmetrical % pole pattern 1248155 by attaching a contact at the aforementioned straight portion
(5) 包括與該技術相關之該業者得以變更設計之内容 [實施型態1] 第1圖為本發明貫施型態丨相關之靜電夾具之電極圖案俯 視圖。第2圖為第1圖所示之靜電夾具剖視圖。f亥靜電失具 1 〇〇具備曰曰圓台1、裝設在晶圓台1上之絕緣體2和埋設在絕 、’水體2之雙極型電極3(電極圖案3)。正極電極以及負極電極 ^在半徑方向具有直線部31a、31b，形成從該直線部3U、 31b以枝狀延伸出之複數c字形部32&、3沘之形狀。直線部 3：U、jlb位於互相相對且形成直徑方向之大致一直線上。 且，則述C字形部32a、32b形成複數之同心圓圖案，且形成 互相父織成梳齒狀。 正極直線部3 1 a之端部形成伸入負極最小徑之c字形部 32b之圓形。該電極圖案3可藉由光蝕刻法而精密地形成。 延伸出之C字形部32a、32b以圖案簡單化，和大約3條至4 條用於擴大電極面積為佳。再者，前述絕緣體2使用氧化鋁 專陶兗。 支持銷孔4配設成將未形成電極圖案3的部分當作孔中心 。支持銷孔4以120度間隔裝設3個，配設成避開各正極及負 極之直線部31a、31b。因&，由於不會影響該直線部川、 3lb，而不用複雜的迴避形狀，可使形狀僅如此簡單。前述 2極圖案3埋設於裝設在晶圓台1上之絕緣體2内。前述晶圓 台1在該内部㈣有冷水配管（省略圖示）或支持銷機構5等 。正極及負極之電極3a、3b連接有直流電源6。 刖述支持銷機構5具備貫穿支持銷孔4之氧化鋁製銷軸” (6) 1248155 麵麵廳 、收容銷軸51且導入氦氣之凸緣52和進行銷軸51的升降動 作之氣筒53。凸緣52内部藉由風箱54隔斷外部空氣。且， 晶圓台1中央裝設有氦出口 7。 电極圖案3之直線部3 la、31b大致中央，裝設有與直流電 源H接點8。首先，該電極圖案3之正極及負極電極3a、3b ，該寬度都均等’面積及厚度亦大致相同，由於電極圖荦3 為對稱形狀，電極圖案3之正極及負極極為類似，因此電極 圖木3 w形成大致相同之電阻值。因此’只要是在正極和負 f之對應位f ’接點8可裝設在任意位置，因而形成一種設 :自由度極高之裝置。尤其，接點8不僅單數時，裝設複數 日守亦有效。 極之電極η、35施加直流電流6時，庫余力 士 日日圓W和電極3之間，使晶圓w吸附在電極3。此 吟，由於電極圖案3以上述方式形成，因此晶圓吸附區域 3致f體區域中，對晶圓w之庫命力會產生作用。且， 社般而言’正極及負極之電極圖案以使該面積互相相等為 :’但依據該電極圖案3，由於採用簡單形狀之圖案 支持銷機構5造成的形狀複雜化最小化，因此易於使 極面積相等。 貝 依據。亥猙弘夾具10〇，藉由簡單的電極圖案3可在 :圓吸附區域之大致全體區域獲得安定均等之吸附力。复 、-果：消除晶圓w之溫度不均，可均等地加工。 ^冒在電極圖案3重疊RF(radi〇 fre叩叫·射頻）進 _ 虫刻’但如習知之靜電夾具，相對的電極圖案以部分 -11- 1248155(5) Contents including changes in the design of the manufacturer related to the technology [Embodiment 1] Fig. 1 is a top view of an electrode pattern of an electrostatic chuck related to the present invention. Fig. 2 is a cross-sectional view showing the electrostatic chuck shown in Fig. 1. The f-electrostatic dislocation 1 has a crucible table 1, an insulator 2 mounted on the wafer table 1, and a bipolar electrode 3 (electrode pattern 3) embedded in the water body 2. The positive electrode and the negative electrode ^ have straight portions 31a and 31b in the radial direction, and have a shape of a plurality of c-shaped portions 32&, 3' extending from the straight portions 3U and 31b in a branched shape. The straight portion 3: U, jlb are located on substantially straight lines that face each other and form a diameter direction. Further, the C-shaped portions 32a and 32b form a plurality of concentric circular patterns, and are formed into a comb-tooth shape with each other. The end portion of the positive straight portion 3 1 a is formed in a circular shape extending into the c-shaped portion 32b of the minimum diameter of the negative electrode. This electrode pattern 3 can be precisely formed by photolithography. The extended C-shaped portions 32a, 32b are simplified in pattern, and about 3 to 4 are used to enlarge the electrode area. Further, the insulator 2 is made of alumina. The support pin hole 4 is disposed such that the portion where the electrode pattern 3 is not formed is regarded as the center of the hole. The support pin holes 4 are provided at three intervals of 120 degrees, and are disposed so as to avoid the straight portions 31a and 31b of the positive electrode and the negative electrode. Because &, because it does not affect the straight line, 3lb, without complicated avoidance shapes, the shape can be made so simple. The two-pole pattern 3 is embedded in the insulator 2 mounted on the wafer stage 1. The wafer table 1 has a cold water pipe (not shown), a support pin mechanism 5, and the like in the inside (4). A DC power source 6 is connected to the electrodes 3a and 3b of the positive and negative electrodes. The support pin mechanism 5 includes an alumina pin shaft that penetrates the support pin hole 4 (6) 1248155 face chamber, a pin 51 that receives the pin 51 and introduces a helium gas, and a gas cylinder 53 that performs a lifting operation of the pin shaft 51. The inside of the flange 52 is shielded from the outside air by the bellows 54. The center of the wafer table 1 is provided with a weir exit 7. The straight portions 3 la and 31b of the electrode pattern 3 are substantially central, and are connected to the DC power source H. Point 8. First, the positive and negative electrodes 3a and 3b of the electrode pattern 3 have the same width and the same area and thickness. Since the electrode pattern 为3 is symmetrical, the positive and negative electrodes of the electrode pattern 3 are very similar. The electrode pattern 3 w forms substantially the same resistance value. Therefore, the contact point 8 can be installed at any position as long as it is at the positive electrode and the corresponding position f of the negative f, thereby forming a device having a very high degree of freedom. When the contact 8 is not only singular, it is also effective to install a plurality of days. When the electrodes η and 35 apply a direct current 6, the wafer w is adsorbed on the electrode 3 between the Japanese yen W and the electrode 3. Since the electrode pattern 3 is formed in the above manner, the crystal In the adsorption region 3, the f body region acts on the cell life of the wafer w. Moreover, the electrode patterns of the positive electrode and the negative electrode are such that the regions are equal to each other: but according to the electrode pattern 3, Since the shape complication caused by the support of the pin mechanism 5 with a simple shape pattern is minimized, it is easy to make the pole areas equal. The base is based on the simple electrode pattern 3, which can be approximated by the circular adsorption region. The entire area is stable and equal in adsorption. Complex, - fruit: eliminate the temperature unevenness of the wafer w, can be processed equally. ^ In the electrode pattern 3 overlap RF (radi〇fre 叩 · · RF) into _ insect engraving But as is known from electrostatic fixtures, the opposite electrode pattern is in part -11-1248155
满頓嶋 2 3 、 201 、 501a 、 501b 3 、 3a 、 3b 、 201 、 202a 202b 、 203a 、 203b 、 501a 、 501b 、 502b 4 5 6 7 8、205 31a 、 31b 、 502a 32a 、 32b 33a 、 33b 51 52 53 54 100 、 200 、 500 204Full 嶋 2 3 , 201 , 501a , 501b 3 , 3a , 3b , 201 , 202a 202b , 203a , 203b , 501a , 501b , 502b 4 5 6 7 8 , 205 31a , 31b , 502a 32a , 32b 33a , 33b 51 52 53 54 100 , 200 , 500 204
503a 、 503b W 晶圓台 絕緣體 電極圖案 電極 支持銷孔 支持銷機構 直流電源、直流電流 氦出口 接點 直線部 C字形部 短直線部 銷軸 凸緣 氣筒 風箱 靜電夾具 直流電源 圓弧部 晶圓503a, 503b W Wafer stage Insulator Electrode pattern Electrode Support pin hole Support pin mechanism DC power supply, DC current 氦 Exit Contact Straight line C-shaped part Short straight part Pin shaft Flange Air box Wind box Static clamp DC power supply Arc section Wafer