201013830 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種靜電吸盤及其製造方法，此種靜電吸盤透 過使用靜電力用以保持一基板。 【先前技術】 一靜電吸盤為透過使用靜電力保持一基板之設備。靜電吸盤 通常在一基板處理設備’例如透過在真空狀態下使用電漿處理一 ® 基板的真空處理設備中使用於小心固定之物體，例如一基板。 透過靜電吸盤固定之基板包含有液晶顯示面板之玻璃基板。 這些液晶顯示面板之玻璃基板為高產量可整體製造且適合於較大 之液晶顯示裝置（LCD)。由於基板變得較大，因此靜電吸盤也變 得較大。 根據電源作用方法，靜電吸盤可分類為一雙極型以及一單極 _ 型，雙極型使用一對具有微小圖案之陽極及陰極，並且單極型使 用一單極。 然而，雙極型靜電吸盤應用於較大的靜電吸盤具有問題。 更具體而§，當雙極型靜電吸盤透過燒結一陶瓷片或透過使 用聚醜胺製造時，在具有微小圖案之電極之間可產生短路。並且， 燒結方式或壓縮方式之製造方法可具有其自身之問題。 相反，由於單極型靜電吸盤使用一電漿喷塗製程的簡單製造 方法，因此制叙使用。然而，單極型靜電吸麵可具有以下 201013830 問題。 1*先’隨料極型靜電吸盤變得較大，需要執行較長時間的 電源供編細冑力，㈣親_吨行電源切斷。 其次，隨著與產生靜電力之直流電源相連接之連接點相距之 距離變長。可產生根據靜電讀之位置峨大電壓差。 【發明内容】 因此，繁於上述之問題，本發明之目的之一在於提供一種靜 電吸盤及錄造方法，此種魏健透祕—電極賴分為複數 與錢電源相連接’能夠迅速執行電源供給及電源 切斷並且此夠防止一電壓差。 為了獲得本發明的這些目的和其他特徵，現對本發明作具體 化和概括性的描述，本發明的一種靜電吸盤包含有··一電極層， 其劃分為複數個電極雜，並且與—錢電源树接以使得這些 電極部份具有相同之極性。 這些電極部份可與直流電源并行相連接。 此直流電源可提供為複數個，並且可與各電極部份相連接。 根據本發明之另-方面，一種靜電吸盤包含有：一主體；一 第絕緣層，其形成於主體之上；一電極層其在第一絕緣層之 上劃分為複數個電極部份，並且與直流電源相連接，以使得這些 _部份具有烟之極性；以及—第二絕緣層，其形成 之上。 201013830 此主體可接地，或者可作用有射頻電源。 複數個用以支採基板之突出物形成於第二絕緣層之上。 根據本發明之又-目的’―種靜電讀包含有：—電極戶， 其劃分為-對應於-基板之巾，份之巾心電極部份，以及二形 成為包圍中心電極部份之外圍電極部 ^ 圍電極部份與m肋連接。 t極部份及外 中心電極部份可整體形成，或者可劃分為複數個部份。 中心電極部份可更包含有至少—個延伸部份，此延伸部份朝 向靜電吸盤之外圍延伸且與直流電源相連接。 外圍電極雜可整獅成，或柯域數個部份。 中心電極部份及外圍電極部份與直流電源相連接以便具有相 同之極性或不同之極性。 作用於中心電極部份之—電壓具有之絕對大小等於或小於作 參用於外圍電極部份之一電壓之絕對大小。 為了獲得本發明之目的之這些和其他優點，對本發明作具體 化和概括性的描述，本發明的—種靜電吸盤包含有：_真空室， 其配設為形成—真空處理—基板之處理空間；以及-基板切單 兀*，其具有此靜電吸盤且配設為用以支撐基板。 為了獲得本發明之目的之這些和其他優點，對本發明作具體 化和概括性的贿，本㈣的—瓣電健之製造方法包含了一 第一絕緣層形成步驟，用以在一主體之上形成第一絕緣層；一電 5 201013830 極層形成步驟，用以在第-絕緣層之上形成—電極層，此電極層 劃分為複數個電極部份且與直流電源相連接；以及一第二絕緣層 形成步驟，用以在電極層之上形成一第二絕緣層。 在電極層形成步驟中，電極層透過使用一光罩或帶劃分為複 數個電極部份。 此種靜電健之製造錢更包含-第二絕緣層平整步驟，用 以平整第一絕緣層之一頂表面。 此種靜電吸盤之製造方法在第二絕緣層平整步驟之後，更包 含有-突ώ物職轉，⑽在第二絕緣層之±形成紐基板之 複數個突出物^ 本發明之靜電吸盤及其製造方法具有以下之優點。 首先，透過將電極層劃分為複數個電極部份，甚至在基板變 得較大時，電源可自複數個電極部份同時供給至電極層。因此， 可迅速產生且釋放_靜電力。這樣可減少製造基板之時間，並且 因此提高基板之產量。 其次，透過將電極層劃分為複數個電極部份，可減少或防止 在電極層位置的電壓差。這樣可使得基板更均勻且穩固地固定。 第-透過將電極層劃分為外圍電極部份與中心電極部份， 基板之外圍相比較於其他部份更迅速地從靜電吸盤上分離。如此 可減少製造基板所花費之間，並域高基板之產量。 本發明之上獻其他之目的、特徵、方面以及伽可以透過 201013830 =^記_說叫申咖範_別编結構並結合 圖式°卩伤，得以實現和獲得。 【實施方式】 又下將結合圖式部份詳細描述本發明之實施例。 下文中’將結合「第 盤之真空處理設備。 圖」詳細描述一應用本發明之靜電吸 ❿ 躺本發明之靜電吸盤的真空處理設備6為—執行真空處 例如韻刻-基板4，例如一晶片或一液晶顯示裝置（[⑼的 玻璃基板之表面之處理，或者在此基板之表面上形成—薄膜的處 理之設備。真空處理設備6可配設為在將氣體注入於一密封的處 理空間2中時，在處理空間2中形成-電漿。 真空處理設備6可包含有-真空室，肋形成真空處理之處 理空間2。真空室由一室體6a’以及一可與室體6a可拆分地相結 參合之蓋6b組成。較佳地，矩形真空處理設備6之一側具有一大於 2000毫米（mm)之長度，以便處理較大之基板4。一閘門6c形 成於室體6a’基板4通過閘門6c引入至室體6a或自室體如中取 出。 真空處理設備6可包含有不同之模組及裝置，例如-氣體供 給單元10，其安裝於處理空間2之上且透過一供給氣體的氣體供 給管12與一氣體供給設備相連接，一電源供給單元，係用以供給 能量以便在處理空間2中形成電漿，以及一排放口（圖未示），其 201013830 透過排放g 14與—真空泵相連翻以贼及壓力控制。 電=料秘據電驗給方村具有不同之結構。電源供 70"頂電極以及—底電極組成，頂電極透過室體6a、蓋 6b这以及氣體供、给單疋1〇接地形成，並且底電極安裝於一基板支 樓單το 8巾基板讀單疋8供給有—射頻電能且雜進行描述。 真空處理讀包含有—安裝於處理部 1 2之絲切單元8 以便支撐基板4。 基板支樓單疋8包含有—靜電吸盤Μ，靜電吸㈣透過使用 一靜電力固定基板4。 為了增加真空處理基板4的溫度，與/絲了冷卻在真空處 理期間產生之熱，基板支料元8可更包含有_面板3G，面板3〇 與靜電吸盤2G之-底侧_結合且具有_通道，用以溫度控制的 熱傳導流體沿此通道流動。 基板支榜單元8可隨室體6a接地配設，因此，—絕緣件4〇 可另外t裝於靜電吸盤2G與室體6a之間，以使得靜電吸盤2〇能 夠與室體6a絕、缘。 當安裝面板30時，絕緣件4〇較佳與面板3〇之底側面相結合。 基板支樓單元8可更包含有-底面板5〇,底面板5〇與絕緣件 40之底側面相結合’並且透過安褒於真空室之底面的凸緣6〇支 撐。 真空處理設備可裝備有複數個頂針，用以自基板支撐單元8 201013830 上下移動基板4。 以下，將結合「第2圖」及「坌1国. 久第3圖」禅細描述本發明之靜 電吸盤。 靜電吸盤2〇包含有一與面板3〇之頂侧面相結合之主體22 . -形成於主體22之上的第―絕緣層25 電極層％，其形成於 第絕緣層25之上，並且與直流電源相連接以便產生靜電力；以 及-形成於電極層26之上的第二絕緣層27。 在基板與第二絕緣層27之間，靜電吸盤2〇可更包含有複數 個從第二絕緣層27突出之突出物28，以使得例如氦㈣氣的 熱傳導氣體能夠填充於其巾’續支撐基板域行溫度控制。可 在靜電吸盤2〇之邊緣形成一支樓基板4之邊緣的場29。 主體22可由-金屬材料形成，以便透過接地，或者供給至少 一個射頻電源用作一電源供給單元之底電極。 春 第一絕緣層25與第二絕緣層27可由不同之材料形成以具有 預定之介電常數，以便用作靜電吸盤。舉例而言’第一絕緣層25 與第二絕緣層27可由一陶瓷材料，更具體而言，一氧化鋁陶瓷 (A1203)形成。 電極層26可彼此整體形成。然而，電極層26較佳地可劃分 為複數個電極部份26A，以便迅速產生一靜電力，並且不產生或 者減少原有位置之電壓差。 根據例如靜電吸盤20之尺寸之設計條件，可決定每一電極部 201013830 伤26A之形狀及尺寸，電極部份26a之劃分數目，電極部份逾 之圖案等。 也就是說’複數個電極部份26A數目上可實現為三個，並且 可形成為排成一行的例如矩形形狀之相同形狀。 在本發明之另-實施例中，請參閱「第4圖」，複數個電極部 伤26A可形成為8個數目，並且可形成為相同之三角形。由於兩 個電極部份26A形成為―對，因此可形成—矩形圖案。由一對電 極部份26A組成之矩形圖案可在右、左、上及下方向上均勻實現 為複數對。 在本發明之又一實施例中，複數個電極部份26A可不具有限 定的分割數目，但是可形成為獨之形狀，例如-®形、-多邊 形、以及-不均勻之形狀。_部份磁可形成為—均勻之圖案 或形成為一不均勻之圖案。 較佳地’複數個電極部份26A并行與-個直流電源⑼相 連接，由此同時接收各自的直流電源（D)。 還可能複數_極部份26A與至少兩個直流電源（D)中至 乂個相連接。也就是說，直流電源可實現與複數個電極部份撤 具有相同數目之複數個。然而，在此種情況下，與複數個電極部 份26A分別減接之錢電源（D)可具有不同之電勢，在複數 個電極部份26A之間可產生電勢差。而且，用以連接複數個直流 電源（D)的電路變得複雜。並且。難以同時且精密地控制複數個 201013830 電極部份26A。 在本發明之又-實施例中，請參閱「第5圖」至「第7圖」， 電極層26可由-开〉成於靜電吸盤2〇之中心的中心電極部份2册， 以及-形成於靜電吸盤20之外圍的外圍電極部份况組成，外圍 電極部份26C用以包圍中心電極部份26B。 這裡，中心電極部份26B可與基板之中心部份相對應形成， ❿並料整體形成（請參閱「第6圖」及「第7圖」之—個中心電 極部份）。或者，中心電極部份26B可劃分為至少兩個。 外圍電極部份2犯也可整體形成（請參閱「第5圖」之一個 外圍電極部份）。或者’外圍電極部份26C可劃分為至少兩個（請 參閱「第6圖」及「第7圖」）。 如以上之第一至第三實施例所述，中心電極部份26B與外圍 電極部份26C較佳地可與直流輯（D)相連接，以便具有相同 ❹之極性（「第2圖」中應用於的直流電源之‘+，（陽極），但是也可 應用直流電源之‘·’（陰極））。然而，中心電極部份26B及外圍電 極部份26C能夠與直流電源（D)相連接以便具有彼此不相同之 極性。 由於電極層26劃分為中心電極部份26B與外圍電極部份 26C ’因此’本發明之靜電吸盤能夠具有以下優點。 首先’熱傳導氣體例如氦（He)填充於基板4與靜電吸盤2〇 之間。這裡，熱傳導氣體由於其壓力可在基板4之邊緣洩漏。 11 201013830 電極層26畫j分為中心電極部份2册與外圍電極部份26C 之情況下，一作用於中心電極部份26B的電壓（V1)設置為具有 、子大J小於或等於一作用於外圍電極部份况的電壓⑺） 之絕對大小。這樣可防止熱料氣體自基板4之邊緣韻。 為了將基板自靜電吸盤上更容易且更安全地分離，首先提升 基板之外圍，並且然後透過頂針提升基板4之中心部份。為此， 電極^ 26較佳地劃分為中心電極部份施與外圍電極部份Me。 言參閱第5圖」’夕卜圍電極部份26C與中心電極部份2册 0 體开乂成然:而’為了相比較於中心電極部份26B，更快速地自 卜圍電極籍26C去除保持之靜電力，外圍電極部份26匸較佳形 成為相比較於中心電極部份26B具有更小之尺寸，或者較佳地劃 分為複數個部份（請參閱「第6圖」及「第7圖」）。 月參閱第7圖」’電極層26可劃分為中心電極部份湖與 外圍電極部f” 26C。並料過自巾心電極部份26B朝向靜電吸盤 20之周圍延伸’可進一步形成一與直流電源⑼相連接之延伸❹ 挪26D。因此’甚至在直流電源（D)僅與靜電吸盤如之邊緣 相連接之情況下，中心電極部份26B能夠容易與直流電源（D) 相連接。 乂下將、，” 口第8八圖」至「第8G圖」詳細描述本發明之 靜電吸盤之製造方法。 如「第8A圖」所示’執行一第一絕緣層形成步驟，以便透過 12 201013830 熱喷塗或電漿喷塗等形成—第—絕緣層25於—主體22之上。這 裡’第-絕緣層25可伽成於主體a之織電極層％的一頂表 面之上，或者可與頂表面—樣形成於主體22之側表面之上。 如第8B圖」至「第8D圖」所示，執行一電極層形成步驟， 以便在第-絕職25之切錢極層26。 ❹201013830 VI. Description of the Invention: [Technical Field] The present invention relates to an electrostatic chuck which is used to hold a substrate by using an electrostatic force and a method of manufacturing the same. [Prior Art] An electrostatic chuck is a device that holds a substrate by using an electrostatic force. Electrostatic chucks are typically used in a substrate processing apparatus, such as a vacuum processing apparatus that uses a plasma to treat a substrate in a vacuum, for use in a carefully fixed object, such as a substrate. The substrate fixed by the electrostatic chuck includes a glass substrate of the liquid crystal display panel. The glass substrates of these liquid crystal display panels are manufactured in high yield and are suitable for a large liquid crystal display (LCD). Since the substrate becomes larger, the electrostatic chuck also becomes larger. According to the method of power supply, the electrostatic chuck can be classified into a bipolar type and a single pole type, the bipolar type uses a pair of anodes and cathodes having a minute pattern, and the monopole type uses a single pole. However, the application of a bipolar electrostatic chuck to a larger electrostatic chuck has problems. More specifically, §, when a bipolar electrostatic chuck is manufactured by sintering a ceramic sheet or by using a leucoamine, a short circuit can be generated between electrodes having a minute pattern. Also, the manufacturing method of the sintering method or the compression method may have its own problems. On the contrary, since the unipolar electrostatic chuck uses a simple manufacturing method of a plasma spraying process, the specification is used. However, a monopolar electrostatic chuck can have the following 201013830 problem. 1* first's material type electrostatic chucks become larger, and it takes a long time to supply power for fine-tuning. (4) Pro-T-line power cut-off. Second, the distance from the connection point to which the DC power source generating the electrostatic force is connected becomes long. A voltage difference can be generated according to the position of the electrostatic reading. SUMMARY OF THE INVENTION Therefore, one of the objects of the present invention is to provide an electrostatic chuck and a recording method. The Wei Jian transparent-electrode is connected to a plurality of power sources to enable rapid power execution. The supply and power are turned off and this is enough to prevent a voltage difference. In order to obtain the objects and other features of the present invention, the present invention is embodied and described in detail. An electrostatic chuck of the present invention comprises an electrode layer divided into a plurality of electrode impurities, and The trees are connected such that the electrode portions have the same polarity. These electrode portions can be connected in parallel with a DC power source. The DC power supply can be provided in plural and can be connected to each electrode portion. According to another aspect of the present invention, an electrostatic chuck includes: a body; an insulating layer formed on the body; and an electrode layer divided into a plurality of electrode portions on the first insulating layer, and The DC power sources are connected such that these portions have the polarity of the smoke; and - the second insulating layer is formed thereon. 201013830 This body can be grounded or can be used with RF power. A plurality of protrusions for supporting the substrate are formed on the second insulating layer. According to another aspect of the present invention, the electrostatic reading comprises: an electrode household, which is divided into - a substrate corresponding to the substrate, a portion of the core electrode portion, and a peripheral electrode formed to surround the central electrode portion. The part of the electrode is connected to the m rib. The t-pole portion and the outer center electrode portion may be integrally formed or may be divided into a plurality of portions. The center electrode portion may further include at least one extension portion extending toward the periphery of the electrostatic chuck and connected to the DC power source. The peripheral electrodes can be integrated into the whole lion, or several parts of the Ke domain. The center electrode portion and the peripheral electrode portion are connected to a DC power source to have the same polarity or different polarities. The voltage applied to the central electrode portion has an absolute magnitude equal to or less than the absolute magnitude of the voltage applied to one of the peripheral electrode portions. In order to achieve these and other advantages of the present invention, the present invention is embodied and broadly described. The electrostatic chuck of the present invention comprises: a vacuum chamber configured to form a vacuum processing substrate. And a substrate dicing sheet* having the electrostatic chuck and configured to support the substrate. In order to achieve these and other advantages of the object of the present invention, the present invention is embodied and generalized. The method of manufacturing the present invention includes a first insulating layer forming step for use on a body. Forming a first insulating layer; an electric 5 201013830 pole layer forming step for forming an electrode layer on the first insulating layer, the electrode layer is divided into a plurality of electrode portions and connected to a DC power source; and a second An insulating layer forming step of forming a second insulating layer over the electrode layer. In the electrode layer forming step, the electrode layer is divided into a plurality of electrode portions by using a mask or a belt. The electrostatic manufacturing cost further comprises a second insulating layer flattening step for flattening the top surface of one of the first insulating layers. The electrostatic chuck is manufactured by the method of manufacturing the electrostatic chuck of the present invention after the second insulating layer is flattened, and further comprises: - a plurality of protrusions on the second insulating layer; The manufacturing method has the following advantages. First, by dividing the electrode layer into a plurality of electrode portions, even when the substrate becomes large, the power source can be simultaneously supplied to the electrode layer from the plurality of electrode portions. Therefore, the electrostatic force can be quickly generated and released. This reduces the time required to manufacture the substrate and thus increases the yield of the substrate. Secondly, by dividing the electrode layer into a plurality of electrode portions, the voltage difference at the electrode layer position can be reduced or prevented. This allows the substrate to be more uniformly and firmly fixed. By dividing the electrode layer into the peripheral electrode portion and the center electrode portion, the periphery of the substrate is more quickly separated from the electrostatic chuck than the other portions. This can reduce the production cost of the substrate and the high substrate yield. The other objects, features, aspects and gaze of the present invention can be realized and obtained through the 201013830 = ^ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ [Embodiment] Embodiments of the present invention will be described in detail below with reference to the drawings. Hereinafter, the vacuum processing apparatus 6 for applying the electrostatic chuck of the present invention will be described in detail in conjunction with the "vacuum processing apparatus of the first tray. Fig." is a vacuum processing apparatus 6 for performing the electrostatic chuck of the present invention, for example, performing a vacuum such as a rhyme-substrate 4, for example, a wafer or a liquid crystal display device (the processing of the surface of the glass substrate of [(9), or the formation of a film on the surface of the substrate. The vacuum processing apparatus 6 can be configured to inject a gas into a sealed processing space. In the middle, the plasma is formed in the processing space 2. The vacuum processing apparatus 6 may include a vacuum chamber, and the ribs form a processing space 2 for vacuum processing. The vacuum chamber may be formed by a chamber body 6a' and a chamber body 6a. Preferably, the side of the rectangular vacuum processing apparatus 6 has a length greater than 2000 millimeters (mm) to process the larger substrate 4. A gate 6c is formed in the chamber body 6a. The substrate 4 is introduced into or removed from the chamber body 6a through the shutter 6c. The vacuum processing apparatus 6 may include different modules and devices, such as a gas supply unit 10, which is mounted on the processing space 2 and is transparent. A gas supply pipe 12 for supplying a gas is connected to a gas supply device, a power supply unit for supplying energy to form a plasma in the processing space 2, and a discharge port (not shown), which is discharged through 201013830. g 14 and - vacuum pump connected to thief and pressure control. Electricity = material secret according to the test to the village has a different structure. Power supply 70 " top electrode and bottom electrode, the top electrode through the chamber body 6a, cover 6b And the gas supply, the single 疋 1 〇 grounding is formed, and the bottom electrode is mounted on a substrate branch το 8 towel substrate reading unit 8 is supplied with - RF power and miscellaneous description. Vacuum processing read includes - installed in the processing section The wire cutting unit 8 of 1 2 supports the substrate 4. The substrate support unit 8 includes an electrostatic chuck Μ, and the electrostatic suction (4) fixes the substrate 4 by using an electrostatic force. In order to increase the temperature of the vacuum processing substrate 4, Cooling the heat generated during the vacuum processing, the substrate support element 8 may further comprise a panel 3G, the panel 3〇 is combined with the bottom side of the electrostatic chuck 2G and has a channel for temperature controlled heat conduction. The fluid flows along the channel. The substrate support unit 8 can be grounded with the chamber body 6a. Therefore, the insulating member 4 can be additionally installed between the electrostatic chuck 2G and the chamber body 6a, so that the electrostatic chuck 2 can be The insulating member 4 is preferably combined with the bottom side of the panel 3A when the panel 30 is mounted. The substrate branch unit 8 may further include a bottom panel 5〇, a bottom panel 5〇 and The bottom side of the insulating member 40 is combined and supported by a flange 6 褒 mounted on the bottom surface of the vacuum chamber. The vacuum processing apparatus may be equipped with a plurality of thimbles for moving the substrate 4 up and down from the substrate supporting unit 8 201013830. The electrostatic chuck of the present invention will be described in detail in conjunction with "Fig. 2" and "坌1国.久图3". The electrostatic chuck 2A includes a main body 22 combined with the top side of the panel 3A. - an insulating layer 25 of the first insulating layer formed on the main body 22, which is formed on the insulating layer 25, and is connected to a DC power source. Connected to generate an electrostatic force; and - a second insulating layer 27 formed over the electrode layer 26. Between the substrate and the second insulating layer 27, the electrostatic chuck 2 can further include a plurality of protrusions 28 protruding from the second insulating layer 27, so that the heat conduction gas such as 氦(四) gas can be filled in the towel. Substrate domain line temperature control. A field 29 of the edge of a floor substrate 4 can be formed at the edge of the electrostatic chuck 2〇. The body 22 may be formed of a -metal material for transmission through ground or a supply of at least one RF power source for use as a bottom electrode of a power supply unit. The first insulating layer 25 and the second insulating layer 27 may be formed of different materials to have a predetermined dielectric constant for use as an electrostatic chuck. For example, the first insulating layer 25 and the second insulating layer 27 may be formed of a ceramic material, more specifically, an alumina ceramic (A1203). The electrode layers 26 may be integrally formed with each other. However, the electrode layer 26 is preferably divided into a plurality of electrode portions 26A to rapidly generate an electrostatic force and to reduce or reduce the voltage difference of the original position. According to the design conditions of the size of the electrostatic chuck 20, for example, the shape and size of the damage of 26A for each electrode portion 201013830, the number of division of the electrode portion 26a, the pattern of the electrode portion, and the like can be determined. That is to say, the plurality of electrode portions 26A can be realized in three numbers, and can be formed in the same shape such as a rectangular shape arranged in a line. In another embodiment of the present invention, referring to Fig. 4, a plurality of electrode damages 26A may be formed in eight numbers and may be formed into the same triangle. Since the two electrode portions 26A are formed as "pairs", a rectangular pattern can be formed. A rectangular pattern composed of a pair of electrode portions 26A can be uniformly realized as a complex pair in the right, left, up, and down directions. In still another embodiment of the present invention, the plurality of electrode portions 26A may not have a defined number of divisions, but may be formed into a unique shape such as a - shape, a - polygon, and a - uneven shape. The _ partial magnet may be formed as a uniform pattern or as a non-uniform pattern. Preferably, the plurality of electrode portions 26A are connected in parallel to a DC power source (9), thereby simultaneously receiving respective DC power sources (D). It is also possible that the plurality of pole portions 26A are connected to one of at least two direct current power sources (D). That is to say, the DC power supply can achieve the same number of multiples as the plurality of electrode portions. However, in this case, the money source (D) which is respectively subtracted from the plurality of electrode portions 26A may have different potentials, and a potential difference may be generated between the plurality of electrode portions 26A. Moreover, the circuit for connecting a plurality of DC power sources (D) becomes complicated. and. It is difficult to simultaneously and precisely control a plurality of 201013830 electrode portions 26A. In still another embodiment of the present invention, please refer to "Fig. 5" to "Fig. 7", and the electrode layer 26 can be opened to the center electrode portion of the center of the electrostatic chuck 2, and - The peripheral electrode portion of the periphery of the electrostatic chuck 20 is composed of a peripheral electrode portion 26C for surrounding the center electrode portion 26B. Here, the central electrode portion 26B may be formed corresponding to the central portion of the substrate, and the tantalum is integrally formed (refer to "the central electrode portion" of "Fig. 6" and "Fig. 7"). Alternatively, the center electrode portion 26B may be divided into at least two. The peripheral electrode portion 2 can also be formed integrally (see a peripheral electrode portion of Fig. 5). Alternatively, the peripheral electrode portion 26C can be divided into at least two (see "Fig. 6" and "Fig. 7"). As described in the first to third embodiments above, the center electrode portion 26B and the peripheral electrode portion 26C are preferably connectable to the DC series (D) so as to have the same polarity of the ❹ ("Fig. 2" The '+, (anode) of the DC power supply applied, but the '·' (cathode) of the DC power supply can also be applied. However, the center electrode portion 26B and the peripheral electrode portion 26C can be connected to the direct current power source (D) so as to have different polarities from each other. Since the electrode layer 26 is divided into the center electrode portion 26B and the peripheral electrode portion 26C', the electrostatic chuck of the present invention can have the following advantages. First, a 'heat-conducting gas such as helium (He) is filled between the substrate 4 and the electrostatic chuck 2'. Here, the heat transfer gas can leak at the edge of the substrate 4 due to its pressure. 11 201013830 In the case where the electrode layer 26 is divided into the center electrode portion 2 and the peripheral electrode portion 26C, a voltage (V1) acting on the center electrode portion 26B is set to have a sub-large J less than or equal to one effect. The absolute magnitude of the voltage (7) in the peripheral electrode portion. This prevents the hot material gas from the edge of the substrate 4. In order to separate the substrate from the electrostatic chuck more easily and safely, the periphery of the substrate is first lifted, and then the central portion of the substrate 4 is lifted through the ejector pin. To this end, the electrode 26 is preferably divided into a central electrode portion to which the peripheral electrode portion Me is applied. Referring to Fig. 5", the outer electrode portion 26C and the central electrode portion 2 are open and closed: and 'to be removed from the electrode electrode 26C more quickly than the center electrode portion 26B. The remaining electrode portion 26 is preferably formed to have a smaller size than the center electrode portion 26B or preferably divided into a plurality of portions (see "Figure 6" and "No. 7 map"). Referring to Fig. 7", the electrode layer 26 can be divided into a central electrode portion lake and a peripheral electrode portion f" 26C. The material is extended from the circumference of the core electrode portion 26B toward the periphery of the electrostatic chuck 20 to further form a DC. The power supply (9) is connected to the extension ❹ 26D. Therefore, even in the case where the DC power supply (D) is only connected to the edge of the electrostatic chuck, the center electrode portion 26B can be easily connected to the DC power supply (D). The method of manufacturing the electrostatic chuck of the present invention will be described in detail in "8th 8th" to "8th". A first insulating layer forming step is performed as shown in Fig. 8A to form a first insulating layer 25 over the body 22 through thermal spraying or plasma spraying or the like. Here, the 'first insulating layer 25' may be embossed on a top surface of the woven electrode layer % of the main body a, or may be formed on the side surface of the main body 22 as the top surface. As shown in Fig. 8B to Fig. 8D, an electrode layer forming step is performed to cut the pole layer 26 at the first-out of office 25 . ❹
這裡電極層26可以不同之方式劃分為複數個電極部份 26A。較佳地’如「第8B圖」所示，複數個電極部份逾之中間 區域透過-光罩_或條帶遮蔽，以便碱這些電極部份Μ。 如第8C圖」所示’複數個電極部份ΜΑ透過熱喷塗或電漿喷 塗升>/成如第8D圖」所示，去除光罩1〇〇或條帶，由此形成劃 分為複數個電極部份26Α的電極層26 ^ 如第8Ε圖」所不，第二絕緣層27透過熱喷塗或電漿喷塗 等开/成於電極層26之上m麟層π與電極層％相對 應形成於主體22之1表面之上。然而，第二絕緣層27可與頂 表面一樣軸社體22，表面，以觀緣主體22。 如「第8E圖」所示，在形成第二絕緣層27之後，第二 部份泌。 枝為將電極層％刻分為複數個電極 13 201013830 平整步驟，「第8F圖」之放大部份内部的虛線表示之第二絕緣層 27可平整為一透過實線表示之層。 執行-突έΒ物軸步驟，以便透過熱喷塗或魏噴塗等在第 二絕緣層27之上形成複數個支撑基板的突出物28。通過這些步 驟’完成靜電吸盤20之製造過程。 靜電吸盤不僅可應用於-真空處理設備，而且可應用於處理 一基板的基板處理設備。 上述之實施例僅為示例性之描述且不應看作對本發明之限 制。本發明之關可容錢聽其他_之設射。本發明規定 為示例性之描述，並且沒有_限制專娜護之細。本領域之 技術人員應當意_料㈣換、變化、以及修改。在此描述之 實施例之特徵、結構、方法、以及其他躲可以不同之方式相結 合用以獲得另外與/或可替換之實施例。 雖然本發明之特徵在不脫離其特性時可實現為不同之形式， 可以理解的是，除非制鋼，上述之實關并不_於上述說 明書之任何細節，而應該在由所附之申請專利範_做廣泛地解 釋。因此在不麟本發崎社申請專種__之本發明之 精神和範_情況下，所作之更動與_，均屬本發明之專利保 護範圍之内。驗本㈣所界定之賴細·照卿之申請專 利範圍。 f圖式簡單說明】 201013830 第1圖係為應用本發明之靜電吸盤之一真空處理設備之結構 之示意圖； 第2圖係為本發明之第一實施例之一靜電吸盤之剖視圖； 第3圖係為本發明第一實施例之靜電吸盤之電極圖案之剖視Here, the electrode layer 26 can be divided into a plurality of electrode portions 26A in different manners. Preferably, as shown in Fig. 8B, the intermediate portions of the plurality of electrode portions are shielded by a mask or a strip so that the electrodes are partially paralyzed. As shown in Fig. 8C, 'a plurality of electrode portions ΜΑ are transferred by thermal spraying or plasma spraying, as shown in Fig. 8D, and the reticle 1 〇〇 or strip is removed, thereby forming a division. The electrode layer 26 of the plurality of electrode portions 26 is not as shown in FIG. 8 , and the second insulating layer 27 is opened or formed on the electrode layer 26 by thermal spraying or plasma spraying or the like. The layer % is correspondingly formed on the surface of the body 1 of the body 22. However, the second insulating layer 27 may be the same as the top surface of the body 22, with the surface of the body 22. As shown in Fig. 8E, after the second insulating layer 27 is formed, the second portion is secreted. The branch is formed by dividing the electrode layer into a plurality of electrodes. 13 201013830 The leveling step, the dotted line inside the enlarged portion of the "Fig. 8F", indicates that the second insulating layer 27 can be flattened into a layer indicated by a solid line. The protrusion-bump axis step is performed to form a plurality of protrusions 28 of the support substrate over the second insulating layer 27 by thermal spraying or Wei spraying. Through these steps, the manufacturing process of the electrostatic chuck 20 is completed. The electrostatic chuck can be applied not only to a vacuum processing apparatus but also to a substrate processing apparatus that processes a substrate. The above-described embodiments are merely illustrative and are not to be construed as limiting the invention. The invention can be used to listen to other _. The invention is described by way of example and there is no limitation to the details. Those skilled in the art will be aware of (4) changes, changes, and modifications. The features, structures, methods, and other obscurations of the embodiments described herein can be combined in various ways to obtain additional and/or alternative embodiments. Although the features of the present invention can be implemented in different forms without departing from the characteristics thereof, it is to be understood that, unless the steel is produced, the above-described practice is not in any detail of the above description, but should be in the attached patent application. Fan _ is widely explained. Therefore, in the case of the invention and the spirit of the invention, the changes and _ are made within the scope of the patent protection of the present invention. The scope of the application patent of Lai Jing·Zi Qing as defined in (4). BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the structure of a vacuum processing apparatus which is one of the electrostatic chucks to which the present invention is applied; FIG. 2 is a cross-sectional view showing the electrostatic chuck of the first embodiment of the present invention; A cross-sectional view of an electrode pattern of an electrostatic chuck according to a first embodiment of the present invention
第4圖至第7圖係為本發明之第二至第六實施例之一靜電吸 盤之電極圖案之示意圖；以及 第8A圖至第8G 圖。 圖係為本發明之靜電吸盤之製造方法之，、，、 【主要元件符號說明】 2 處理空間 4 基板 6 真空處理設備 6a 室體 6b 蓋 6c 閘門 8 基板支撐單元 10 氣體供給單元 12 氣體供給管 14 排放管 20 靜電吸盤 15 201013830 22 主體 25 第一絕緣層 26 電極層 26A 電極部份 26B 中心電極部份 26C 外圍電極部份 26D 延伸部份 27 第二絕緣層 28 突出物 29 壩 30 面板 40 絕緣件 50 底面板 60 凸緣 100 光罩 A 凹面部份 D 直流電源4 to 7 are schematic views showing the electrode patterns of the electrostatic chuck of the second to sixth embodiments of the present invention; and Figs. 8A to 8G. The figure is a manufacturing method of the electrostatic chuck of the present invention, and, [description of main components] 2 processing space 4 substrate 6 vacuum processing apparatus 6a chamber body 6b cover 6c gate 8 substrate supporting unit 10 gas supply unit 12 gas supply tube 14 Discharge tube 20 Electrostatic chuck 15 201013830 22 Body 25 First insulating layer 26 Electrode layer 26A Electrode portion 26B Center electrode portion 26C Peripheral electrode portion 26D Extension portion 27 Second insulating layer 28 Projection 29 Dam 30 Panel 40 Insulation Piece 50 Bottom panel 60 Flange 100 Photomask A Concave part D DC power supply
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