JP5004436B2 - Electrostatic adsorption electrode and processing device - Google Patents

Description

  The present invention relates to an electrostatic chucking electrode and a processing apparatus, and more particularly, to an electrostatic chucking electrode used for mounting a substrate such as a glass substrate in the manufacturing process of a flat panel display (FPD) and the static electricity. The present invention relates to a processing apparatus including an electroadsorption electrode.

  In the manufacturing process of the FPD, plasma processing such as dry etching, sputtering, and CVD (Chemical Vapor Deposition) is performed on a glass substrate as an object to be processed. For example, a pair of parallel plate electrodes (upper and lower electrodes) are disposed in the chamber, and after placing a glass substrate on a susceptor (substrate mounting table) that functions as a lower electrode, a processing gas is introduced into the chamber, A high-frequency electric power is applied to at least one of the electrodes to form a high-frequency electric field between the electrodes, a plasma of a processing gas is formed by the high-frequency electric field, and plasma processing is performed on the glass substrate. At this time, the glass substrate can be adsorbed and fixed using an electrostatic adsorption electrode provided on the susceptor, for example, using Coulomb force.

By the way, in order to promote heat transfer to the glass substrate, a heat transfer gas such as He is supplied to the back side of the glass substrate (for example, Patent Document 1 and Patent Document 2). The heat transfer gas is introduced from the susceptor side into a gap between the surface of the susceptor and the back surface of the glass substrate placed thereon through a gas flow path formed through the electrostatic adsorption electrode. The gas channel is subjected to alumite treatment (anodizing treatment) on the surface so that the material of the susceptor made of Al or the like is not exposed.
Japanese Patent Laid-Open No. 9-252047 (FIG. 1, etc.) JP-A-6-328443 (FIG. 4 and the like)

  In the gas flow path formed so as to penetrate the electrostatic adsorption electrode from the susceptor which is also the lower electrode, if the alumite treatment is insufficient, abnormal discharge tends to occur at that portion. Actually, most of the abnormal discharge occurs in the gas flow path of the electrostatic adsorption electrode. In addition, if abnormal discharge occurs in the gas flow path of the electrostatic adsorption electrode, or if the alumite is gradually consumed during use and the insulation deteriorates, it is practically difficult to repair the inside of the hole. Therefore, there is a problem that the entire electrostatic adsorption electrode has to be replaced.

  The present invention has been made in view of the above circumstances, and prevents abnormal discharge in the gas flow path of the electrostatic adsorption electrode, and can be easily repaired even if abnormal discharge occurs in the gas flow path. It is an object of the present invention to provide a simple electrostatic chucking electrode.

In order to solve the above-mentioned problem, in a first aspect of the present invention, at least two second separable surfaces each having a placement surface on which an object to be processed is placed, the placement surface being an electrostatic adsorption surface are separable . comprises one substrate and the second substrate, the mounting surface to reach, the heat transfer medium flow path for supplying a heat transfer medium toward the rear surface of the object to be processed is, first the possible separated from each other characterized in that it is thus formed in a gap formed between the substrate and the second of the state that is a combination of a substrate a first substrate and a second substrate, the electrostatic chucking electrode I will provide a.

In the electrostatic adsorption electrode according to the first aspect, at least a surface of the base material forming the heat transfer medium flow path may be covered with an insulating material.
The heat transfer medium channel may be formed at an angle with respect to the vertical direction.

Further, the heat transfer medium flow path divides the placement surface into a central placement region corresponding to the central portion of the placed workpiece and a peripheral placement region corresponding to the peripheral portion. May be. In this case, each of the divided mounting surface may have an electrostatic adsorption function and independent.
Further, a plurality of convex portions may be formed in the central placement region. Alternatively, a plurality of grooves may be formed in the central placement region.
Further, a step portion may be formed in the peripheral placement region.

  In the 2nd viewpoint of this invention, the processing apparatus provided with the electrostatic adsorption electrode of the said 1st viewpoint is provided. This processing apparatus may be used for manufacturing a flat panel display.

According to the present invention, the electrostatic adsorption electrode is constituted by a plurality of base materials that are separable from each other, and heat transfer medium that supplies a heat transfer medium to the gap between at least two base materials toward the back surface of the workpiece. Since the medium flow path is formed, the conductance of the heat transfer medium flow path is improved, and high heat transfer efficiency can be obtained.
In addition, since the electrostatic adsorption electrode is formed of a plurality of base materials that can be separated from each other and the flow path is formed between them, the insulation of the flow path can be easily performed by, for example, thermal spraying, and abnormal discharge is reliably ensured. Can be prevented. In addition, even if abnormal discharge occurs, repair can be performed in a short time and at low cost. Furthermore, by constituting the electrostatic adsorption electrode with a plurality of base materials, the electrode surface pattern can be arbitrarily changed by simply replacing one of the base materials. Accordingly, it becomes easy to take measures against processing unevenness (processing non-uniformity) in etching processing or the like that occurs due to the pattern dependence of the electrostatic adsorption electrode surface.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a cross-sectional view showing a plasma etching apparatus which is an example of a processing apparatus provided with an electrostatic chuck as an electrostatic chucking electrode according to an embodiment of the present invention. As shown in FIG. 1, the plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on a substrate G such as an FPD glass substrate which is a rectangular object to be processed. Here, as the FPD, a liquid crystal display (LCD), a light emitting diode (LED) display, an electro luminescence (EL) display, a fluorescent display tube (VFD), a plasma display panel (PDP), and the like. Illustrated. The processing apparatus of the present invention is not limited to a plasma etching apparatus.

  This plasma etching apparatus 1 has a chamber 2 formed into a rectangular tube shape made of aluminum, for example, whose surface is anodized (anodized). A prismatic insulating plate 3 made of an insulating material is provided at the bottom of the chamber 2, and a susceptor 4 on which the substrate G is placed is provided on the insulating plate 3. The susceptor 4 that is a substrate mounting table has a susceptor base 4a and an electrostatic chuck 5 provided on the susceptor base 4a.

  An insulating film 7 is formed on the outer periphery of the susceptor substrate 4a, and a dielectric material film 8 such as a ceramic sprayed film is provided on the upper surface of the electrostatic chuck 5. The electrostatic chuck 5 electrostatically attracts the substrate G to the electrode 6 embedded in the dielectric material film 8 by applying a DC voltage from the DC power source 26 via the power supply line 27 by, for example, Coulomb force. The detailed structure of the electrostatic chuck 5 will be described later.

The insulating plate 3 and the susceptor base 4a, and further the electrostatic chuck 5 are formed with gas passages 9 penetrating them. Through this gas passage 9, a heat transfer gas such as He gas is supplied to the back surface of the substrate G that is the object to be processed.
That is, the heat transfer gas supplied to the gas passage 9 once diffuses in the horizontal direction through the gas reservoir 9 a formed at the boundary between the susceptor base 4 a and the electrostatic chuck 5, and then enters the electrostatic chuck 5. It passes through the formed gas supply communication hole 9b and the gas supply slit 9c, and is ejected from the surface of the electrostatic chuck 5 to the back side of the substrate G. In this way, the cold heat of the susceptor 4 is transmitted to the substrate G, and the substrate G is maintained at a predetermined temperature.

  A refrigerant chamber 10 is provided inside the susceptor substrate 4a. In the refrigerant chamber 10, for example, a refrigerant such as a fluorinated liquid is introduced through the refrigerant introduction pipe 10 a and is discharged through the refrigerant discharge pipe 10 b and circulates, so that the cold heat passes through the heat transfer gas. Heat is transferred to the substrate G.

  Above the susceptor 4, a shower head 11 that functions as an upper electrode is provided in parallel with the susceptor 4. The shower head 11 is supported on the upper portion of the chamber 2, has an internal space 12 inside, and has a plurality of discharge holes 13 for discharging a processing gas on the surface facing the susceptor 4. The shower head 11 is grounded and forms a pair of parallel plate electrodes together with the susceptor 4.

A gas inlet 14 is provided on the upper surface of the shower head 11, and a processing gas supply pipe 15 is connected to the gas inlet 14, and a valve 16 and a mass flow controller 17 are connected to the processing gas supply pipe 15. A processing gas supply source 18 is connected via the. A processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, for example, a gas usually used in this field such as a halogen-based gas, O ₂ gas, Ar gas, or the like can be used.

  An exhaust pipe 19 is connected to the lower portion of the side wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19. The exhaust device 20 includes a vacuum pump such as a turbo molecular pump, and is configured so that the inside of the chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. Further, a substrate loading / unloading port 21 and a gate valve 22 for opening and closing the substrate loading / unloading port 21 are provided on the side wall of the chamber 2, and a load lock chamber adjacent to the substrate G with the gate valve 22 opened. (Not shown).

  A power supply line 23 for supplying high frequency power is connected to the susceptor 4, and a matching unit 24 and a high frequency power supply 25 are connected to the power supply line 23. For example, high frequency power of 13.56 MHz is supplied from the high frequency power supply 25 to the susceptor 4.

  Next, the electrostatic chuck 5 will be described in detail with reference to FIGS. FIG. 2 is a plan view of the electrostatic chuck 5 as viewed from above, and FIG. 3 is a cross-sectional view taken along line A-A ′ in FIG. 2. FIG. 4 shows a state where the electrostatic chuck 5 is disassembled.

  The electrostatic chuck 5 is a rectangular member in plan view corresponding to the shape of the substrate G as shown in FIG. 2, and surrounds the inner placement region 5a corresponding to the central portion of the substrate G and the inner placement region 5a. And an outer placement region 5b corresponding to the peripheral edge of the substrate G. The inner placement area 5a and the outer placement area 5b are separated by a gas supply slit 9c.

  Referring to FIGS. 3 and 4, the inner placement area 5a of the electrostatic chuck 5 constitutes the upper surface of the first substrate 30 having a substantially tapered side surface, and the outer placement area 5b is The upper surface of the 2nd base material 31 which has the mortar-shaped recessed part in which the 1st base material 30 is inserted is comprised. In other words, the electrostatic chuck 5 has a combined structure including the first base material 30 and the second base material 31 that are separable from each other. Both the first base material 30 and the second base material 31 are made of a conductive material such as a metal such as Al or carbon. On the bottom surface of the second base material 31, a recess for forming the gas reservoir 9a is formed at the boundary with the susceptor base material 4a.

  As described above, the electrode 6 is embedded in the dielectric material film 8 of the electrostatic chuck 5. More specifically, the electrode 6a is embedded in the dielectric material film 8a on the first base material 30, and the electrode 6b is embedded in the dielectric material film 8b on the second base material 31, respectively. Yes. The electrode 6a is connected to a feed line 27a branched from the feed line 27, and the electrode 6b is connected to the feed line 27b. Then, by applying a DC voltage from the DC power supply 26 to these electrodes 6a and 6b, the substrate G is electrostatically adsorbed by, for example, Coulomb force. In the present embodiment, a configuration in which the electrodes 6 a and 6 b are simultaneously fed from one DC power supply 26 via the feed line 27 is employed. By configuring in this way, the structure of the conventional integral electrostatic chuck can be used as it is up to the susceptor substrate 4a, so that it can be directly mounted on the conventional apparatus without requiring a significant change in the apparatus structure. The electrodes 6a and 6b may be individually fed from separate DC power sources. In this case, the inner placement area 5a and the outer placement area 5b may exhibit an electrostatic adsorption function independently of each other. it can.

The dielectric material film 8 (8a, 8b) is not limited as long as it is made of a dielectric material, and includes not only a highly insulating material but also a material having conductivity sufficient to permit charge transfer. Such a dielectric material film 8 is preferably made of ceramics from the viewpoint of durability and corrosion resistance. The ceramics at this time are not particularly limited, and typically include insulating materials such as Al ₂ O ₃ , Zr ₂ O ₃ , Si ₃ N _4, etc., but have some conductivity like SiC. You may have. Such a dielectric material film 8 is preferably formed by thermal spraying. Further, after spraying, the surface may be smoothed by polishing.

  As shown in the drawing, a large number of convex portions 50 are formed in the inner placement area 5a, while a step 51 is formed in the outer placement area 5b so as to surround the inner placement area 5a. It is preferable that the height of the top surface of the stepped portion 51 be equal to or higher than the height of the convex portion 50. The protrusions 50 are formed in a predetermined pattern in the inner placement region 5 a on the dielectric material film 8, and the substrate G has an upper end of these protrusions 50, an upper surface of the step part 51, and the upper surface of the step part 51. It has come to be supported by. Thereby, the convex part 50 functions as a spacer separating the susceptor 4 and the substrate G. Therefore, the space between the convex portions 50 can be filled with a heat transfer gas such as helium gas to uniformly cool the substrate G, and the temperature of the substrate G can be made uniform. Can be applied uniformly over the entire surface of the substrate G. Moreover, since it can suppress that heat transfer gas diffuses around by the step part 51, the heat transfer efficiency by heat transfer gas can be improved. Furthermore, it is possible to prevent the deposits adhered on the susceptor 4 from adversely affecting the substrate G.

  In the plasma etching apparatus 1, deposits such as substances etched from the substrate G accumulate on the surface of the dielectric material film 8 by repeating the etching process, but the convex portion 50 serves as a spacer. Even if deposits accumulate, it is difficult to come into contact with the substrate G, thereby preventing the disadvantage of etching unevenness.

  There is no restriction | limiting in particular in the arrangement pattern of the convex part 50, For example, arrangement | sequences, such as a houndstooth check pattern, may be sufficient. It is preferable that the convex portion 50 is formed in a curved surface shape or a hemispherical shape at least at an upper portion thereof and is brought into point contact with the substrate G. Thereby, it is possible to make it difficult for the deposit to adhere to the contact portion between the convex portion 50 and the substrate G.

The convex part 50 is comprised with the ceramics generally known as a material with high durability and corrosion resistance. The ceramic constituting the convex portion 50 is not particularly limited, and typically includes insulating materials such as Al ₂ O ₃ , Zr ₂ O ₃ , and Si ₃ N _4, but to some extent like SiC. It may have conductivity. The convex portion 50 is preferably formed by thermal spraying, and more preferably sprayed integrally with the dielectric material film 8.

  In the present embodiment, the first base material 30 and the second base material 31 can be separated so that the surface shape (surface pattern) of the inner placement region 5a is changed by replacing the first base material 30. ) Can be changed easily. That is, the distribution pattern of the convex portions 50 can be arbitrarily changed, and in addition to those having the convex portions 50, for example, those having grooves on the upper surface of the first base material 30, those having a flat plane, etc. Can change. In this case, the second base material 31 may not be exchanged. Therefore, the degree of freedom in selecting the surface shape of the mounting surface can be increased according to the purpose of etching.

  Moreover, in order to reduce the load by heat, the 1st base material 30 and the 2nd base material 31 can also be selected from a different material. Conventionally, in the case of high-temperature specifications, the resistance due to heat load has been increased by changing the material of the susceptor base material 4a to a material having a small thermal expansion coefficient such as carbon. However, since the base material of the conventional integrated electrostatic chuck was a metal such as Al, component interference or the like occurs due to the difference in thermal expansion coefficient at the bonding surface between carbon having a small thermal expansion coefficient and large Al. There was a problem. On the other hand, since the electrostatic chuck needs to have an adsorption function by spraying the dielectric material film 8 on the surface thereof, the expansion of the base material due to heat becomes a factor that causes the dielectric material film 8 to crack. . In the present embodiment, since the first base material 30 and the second base material 31 are configured to be separable, for example, the first base material 30 is heated to prevent the dielectric material film 8 from cracking. Carbon with low expansion is used, and the second base material 31 is made of the same material (Al) or, for example, stainless steel (SUS) in order to relieve the thermal stress between the material (Al) of the susceptor base material 4a. It is also possible to select a material such as. And since the gas supply slit 9c exists between the 1st base material 30 and the 2nd base material 31, a thermal stress can be relieve | moderated. Thereby, it becomes possible to improve high temperature tolerance.

  The lower surface of the first base material 30 is brought into contact with the bottom surface of the concave portion of the second base material 31, and is fixed by a joining means (not shown) such as a screw. As shown in FIG. 3, a gap is formed between the first base material 30 and the second base material 31 in combination, and as described above, this gap functions as the gas supply slit 9c. To do. The gas supply slit 9 c is formed so as to surround the periphery of the first base material 30. Thus, by supplying the heat transfer gas not through a narrow hole but through a slit, the conductance of the flow path can be greatly improved, and the heat transfer efficiency can be increased.

  In the present embodiment, the gas supply slit 9c has an inclined channel structure. However, the present invention is not limited to this, and the first base material 30 is formed in a cylindrical shape, and the second base material 31 is a cylinder. The gas supply slit may be formed vertically between the two substrates. However, regardless of whether the gas flow path is a slit or a hole, the gas flow path is an opening in which the lower electrode does not exist when viewed from above the substrate G during plasma processing. In the region of the substrate G immediately above the flow path portion, etching unevenness is likely to occur. It is preferable from the viewpoint of preventing etching unevenness to incline the gas supply slit 9c as in the present embodiment and reduce the number of vertical flow paths as much as possible. The inclination angle of the gas supply slit 9c is preferably in the range of approximately 45 ° ± 15 ° with respect to the vertical direction in consideration of the conductance of the flow path.

  The wall surfaces of the first base material 30 and the second base material 31 constituting the gas supply slit 9c are covered with an insulating material such as a ceramic sprayed film 32 so that a material such as Al is not exposed. The ceramic sprayed film 32 prevents abnormal discharge in the gas supply slit 9c. In the conventional electrostatic chuck, since the heat transfer gas flow path was a hole, abnormal discharge was prevented by anodizing the inside, but it was difficult to perform uniform anodizing in a narrow hole. In addition, alumite is easy to deteriorate, and it is difficult to reliably prevent abnormal discharge. In the present embodiment, the insulating properties can be improved by covering the wall surfaces of the first base material 30 and the second base material 31 with the ceramic sprayed film 32.

  The ceramic sprayed film 32 can be easily formed because the surface may be sprayed in a state where the first base material 30 and the second base material 31 are separated. In the case of insulation by conventional alumite treatment, a decrease in insulation due to consumption of alumite has become a problem. However, in the ceramic sprayed film 32, a decrease in insulation is unlikely to occur, so abnormal discharge in the gas flow path can be reliably prevented. Moreover, even if abnormal discharge occurs in the gas supply slit 9c, the first base material 30 and the second base material 31 may be separated and repaired by thermal spraying, so that repair is easy. The downtime of the plasma etching apparatus 1 accompanying the repair of abnormal discharge can be shortened.

  The gas supply slit 9c communicates from the mounting surface of the electrostatic chuck 5 to the joint portion between the first base material 30 and the second base material 31, and a gas supply is provided in the vicinity of the joint portion. An O-ring 33 serving as a sealing means is provided so that gas leakage from the slit 9c does not occur, and the sealing performance of the joint surface is ensured. Further, a spiral shield ring 34 is provided inside the O-ring 33 to ensure the same potential between the first base material 30 and the second base material 31.

  As described above, the heat transfer gas is supplied from the gas reservoir 9a to the gas supply slit 9c through the gas supply communication hole 9b. 3 and 4, only one gas supply communication hole 9b is shown. However, for example, four or more gas supply communication holes 9b are provided so that the heat transfer gas can be evenly distributed to the gas supply slit 9c. It is preferable to provide it.

  A discharge prevention member 35 is provided in each gas supply communication hole 9b. 5A is an external perspective view of the discharge preventing member 35, and FIG. 5B is a cross-sectional view. The discharge preventing member 35 is made of an insulating material such as a synthetic resin, and a plurality of bent labyrinth-structure flow paths 35a are formed. In the actual discharge prevention member 35, a large number of flow paths 35a are formed, but are shown in a very simplified manner in FIG. The discharge preventing member 35 having such a structure is fitted into the gas supply communication hole 9b, and due to its bent and narrow flow path structure, abnormal discharge in the gas supply communication hole 9b in which the ceramic sprayed film 32 is not formed. It acts to prevent this.

Next, the processing operation in the plasma etching apparatus 1 configured as described above will be described.
First, the substrate G, which is an object to be processed, is loaded into the chamber 2 from the load lock chamber (not shown) through the substrate loading / unloading port 21 after the gate valve 22 is opened, and the electrostatic charge formed on the susceptor 4. It is placed on the chuck 5. In this case, the transfer of the substrate G is performed through a lifter pin (not shown) provided so as to be able to protrude from the susceptor 4 through the inside of the susceptor 4. Thereafter, the gate valve 22 is closed, and the inside of the chamber 2 is evacuated to a predetermined vacuum level by the exhaust device 20.

  Thereafter, the valve 16 is opened, and the flow rate of the processing gas from the processing gas supply source 18 is adjusted by the mass flow controller 17, while passing through the processing gas supply pipe 15 and the gas inlet 14 to the internal space 12 of the shower head 11. Then, the pressure is uniformly discharged to the substrate G through the discharge holes 13, and the pressure in the chamber 2 is maintained at a predetermined value.

  In this state, high-frequency power is applied from the high-frequency power supply 25 to the susceptor 4 through the matching unit 24, thereby generating a high-frequency electric field between the susceptor 4 serving as the lower electrode and the shower head 11 serving as the upper electrode. Is dissociated and turned into plasma, whereby the substrate G is etched. At this time, the temperature is adjusted efficiently by supplying the heat transfer gas to the back side of the substrate G through the gas supply slit 9c.

  After performing the etching process in this manner, the application of the high frequency power from the high frequency power supply 25 is stopped, the gas introduction is stopped, and then the pressure in the chamber 2 is reduced to a predetermined pressure. Then, the gate valve 22 is opened, and the substrate G is unloaded from the chamber 2 to the load lock chamber (not shown) via the substrate loading / unloading port 21, thereby completing the etching process for the substrate G. In this way, the substrate G can be electrostatically attracted by the electrostatic chuck 5 and the substrate G can be etched while the temperature is adjusted.

  The present invention is not limited to the embodiment described above. For example, the processing apparatus of the present invention has been described by exemplifying a RIE type capacitively coupled parallel plate plasma etching apparatus that applies high-frequency power to the lower electrode. The present invention can be applied to other plasma processing apparatuses, and may be a type that supplies high-frequency power to the upper electrode, and is not limited to a capacitive coupling type but may be an inductive coupling type. Further, the substrate to be processed is not limited to a glass substrate for FPD but may be a semiconductor wafer.

Moreover, in the said embodiment, the electrostatic chuck 5 is made into the combined structure of the 1st base material 30 and the 2nd base material 31, and the mounting surface of the board | substrate G is set to the inner mounting area | region 5a and the outer mounting area | region 5b. However, the present invention is not limited to such a form.
For example, as in the electrostatic chuck 60 shown in FIG. 6, the gas supply slit 62 and the gas supply slit 63 are formed in a double manner, so that the mounting surface is a central region 61a, an intermediate region 61b, and a peripheral region 61c. It is also possible to make a triple structure so as to be divided into two regions. In this way, the conductance of the heat transfer gas can be further improved, and the range of selection of the shape pattern on the mounting surface is further expanded, so that processing such as etching can be performed with higher accuracy. In addition, the code | symbol 64 of FIG. 6 is a step part equivalent to the code | symbol 51 of FIG.

  Further, in still another embodiment, like the electrostatic chuck 70 shown in FIG. 7, the inner mounting regions 71a, 71b, 71c, 71d divided into four are formed on the mounting surface, and the periphery thereof is formed. The gas supply slit 72 may be formed so as to have a divided structure in which the peripheral region 71e is formed. Also in this case, the conductance of the heat transfer gas can be further improved, and the range of selection of the shape pattern of the mounting surface is widened. For example, four FPD products are processed from one substrate G. This is advantageous when performing so-called four-chamfering. That is, the surface shapes of the four inner placement regions 71a, 71b, 71c, 71d can be changed according to the processing content of the substrate G, and processing such as highly accurate etching can be realized according to the processing purpose. . In addition, the code | symbol 73 of FIG. 7 is a step part equivalent to the code | symbol 51 of FIG.

1 is a cross-sectional view showing a schematic configuration of a plasma etching apparatus according to an embodiment of the present invention. The top view of an electrostatic chuck. Sectional drawing of the A-A 'line arrow of FIG. The figure which shows the state which isolate | separated the 1st base material and the 2nd base material. It is a schematic diagram with which it uses for description of a discharge prevention member, (a) is a perspective view, (b) is sectional drawing. The top view of the electrostatic chuck which concerns on another embodiment. The top view of the electrostatic chuck concerning another embodiment.

Explanation of symbols

1 Processing equipment (plasma etching equipment)
2 Chamber (Processing room)
3 Insulating plate 4 Susceptor 5 Electrostatic chuck 6 Electrode 8 Dielectric material film 11 Shower head (gas supply means)
DESCRIPTION OF SYMBOLS 20 Exhaust apparatus 30 1st base material 31 2nd base material 32 Ceramics sprayed film 33 O-ring 34 Spiral shield ring 35 Discharge prevention member 50 Convex part

Claims (11)

Including at least two first base material and second base material , each having a placement surface on which an object is placed, wherein the placement surface is an electrostatic attraction surface and separable from each other;
A state in which the heat transfer medium flow path that reaches the mounting surface and supplies the heat transfer medium toward the back surface of the object to be processed is a combination of the first base material and the second base material that are separable from each other. in characterized in that it is thus formed in a gap formed between the first substrate and the second substrate, the electrostatic chucking electrode. The electrostatic adsorption electrode according to claim 1, wherein at least surfaces of the first base material and the second base material forming the heat transfer medium flow path are covered with an insulating material. .   The electrostatic adsorption electrode according to claim 1, wherein the heat transfer medium flow path is formed with an angle with respect to a vertical direction.   By the heat transfer medium flow path, the placement surface is divided into a central placement region corresponding to the central portion of the placed workpiece and a peripheral placement region corresponding to the peripheral portion. The electrostatic attraction electrode according to any one of claims 1 to 3, wherein:   The electrostatic chucking electrode according to claim 4, wherein each of the divided mounting surfaces independently has an electrostatic chucking function. The electrostatic chucking electrode according to claim 4 or 5 , wherein a plurality of convex portions are formed in the central mounting region. The electrostatic chucking electrode according to claim 4 , wherein a plurality of grooves are formed in the central mounting region. The electrostatic attraction electrode according to claim 4 , wherein a stepped portion is formed in the peripheral placement region. The first base material and the second base material do not have a hole that penetrates the first base material and the second base material and supplies a heat transfer medium toward the back surface of the object to be processed. The electrostatic attraction electrode according to any one of claims 1 to 8, wherein   The processing apparatus provided with the electrostatic attraction electrode described in any one of Claims 1-9.   The processing apparatus according to claim 10, wherein the processing apparatus is used for manufacturing a flat panel display.

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