CN110246745B - Plasma processing device, electrostatic chuck and manufacturing method of electrostatic chuck - Google Patents
Plasma processing device, electrostatic chuck and manufacturing method of electrostatic chuck Download PDFInfo
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- CN110246745B CN110246745B CN201910411514.9A CN201910411514A CN110246745B CN 110246745 B CN110246745 B CN 110246745B CN 201910411514 A CN201910411514 A CN 201910411514A CN 110246745 B CN110246745 B CN 110246745B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a plasma processing apparatus, an electrostatic chuck and a method for manufacturing the electrostatic chuck. The electrostatic chuck includes an upper substrate and a lower substrate; the upper substrate comprises an aluminum substrate and a ceramic layer, wherein the ceramic layer is laminated on the upper surface of the aluminum substrate; the upper base body and the lower base body are stacked and fixedly connected into a whole. A plasma processing apparatus includes a chamber, and an electrostatic chuck disposed within the chamber. The method of manufacturing the electrostatic disk chuck includes the steps of: forming an upper substrate; forming a lower substrate; and laminating the upper substrate and the lower substrate, and fixedly connecting the upper substrate and the lower substrate into a whole. The invention divides the electrostatic chuck into an upper part and a lower part, and only the upper substrate can be maintained when in maintenance. Compared with the whole electrostatic chuck, the upper substrate only comprises an air passage and does not comprise a condensing agent passage, so that the number of pore passages to be blocked in the maintenance process is reduced, the maintenance difficulty and the workload are reduced, and the influence of the processes of polishing, plasma spraying again and the like on the lower substrate is avoided.
Description
Technical Field
The present invention relates to semiconductor manufacturing equipment, and more particularly, to a plasma processing apparatus, an electrostatic chuck for holding a semiconductor wafer and a liquid crystal panel, and a method for manufacturing the electrostatic chuck.
Background
In plasma etching or chemical vapor deposition processes, an electrostatic Chuck (ESC) is often used to fix, support and transport a substrate (Wafer) to be processed. The electrostatic chuck is arranged in the reaction chamber, and adopts an electrostatic attraction mode rather than a mechanical mode to fix the substrate, so that the possible mechanical loss to the substrate can be reduced, and the electrostatic chuck is completely contacted with the substrate, thereby being beneficial to heat conduction.
The conventional electrostatic chuck is mostly applied to clamping a semiconductor/liquid crystal panel. The electrostatic chuck structure is mostly formed by spraying a ceramic coating on a metal substrate to prevent the metal from being corroded by plasma. Although the ceramic coating is corrosion-resistant, the ceramic coating is inevitably corroded with the progress of one time of etching, pollutants in the ceramic overflow, and generated particles pollute the surface of the wafer, thereby influencing the yield of wafer products. In practice, the electrostatic chuck is often repaired and reused to save cost by purchasing a new chuck. Because the electrostatic chuck has a complex structure, the electrostatic chuck comprises a water path and a gas path, and the difficulty of the processing and re-spraying process in the repairing process is higher.
Disclosure of Invention
In order to solve the above technical problems, an objective of the present invention is to disclose an electrostatic chuck, which can reduce the difficulty in the repairing process.
The invention achieves the above purpose through the following technical scheme:
an electrostatic chuck comprising an upper substrate and a lower substrate; the upper substrate comprises an aluminum substrate and a ceramic layer, wherein the ceramic layer is laminated on the upper surface of the aluminum substrate; the upper base body and the lower base body are stacked and fixedly connected into a whole.
Furthermore, a plurality of round tables are distributed on the surface of the ceramic layer.
Furthermore, the aluminum base of the upper base body is an air flue aluminum base body, a gas channel is distributed in the aluminum base, and the upper surface of the aluminum base is provided with air holes communicated with the gas channel; the surface of the ceramic layer is distributed with a plurality of air holes, the air holes on the surface of the ceramic layer are communicated with the gas channel through the air holes on the upper surface of the air channel aluminum substrate to form a first air channel, and the first air channel is communicated with the first gas source; the ceramic layer is characterized in that the edge of the surface of the ceramic layer is provided with an annular convex edge higher than the surface of the ceramic layer, and the height of the convex edge is equal to that of the circular truncated cone.
Furthermore, a condensing agent channel communicated with the outside is distributed in the lower base body.
Furthermore, the thickness of the ceramic layer after spraying is 10-900 μm, and the surface roughness of the ceramic layer after processing is Ra0.1-Ra 3.
Further, the side surfaces of the upper substrate and the lower substrate are sprayed with ceramic layers.
Furthermore, the thickness of the ceramic layer is 10-900 μm, and the surface roughness of the ceramic layer after processing is Ra0.1-Ra 3.
Further, the lower surface of the airway aluminum substrate has a flatness of 0.002-0.1 mm.
Further, the flatness of the upper surface of the lower substrate is 0.002 to 0.1 mm.
Further, the lower surface of the airway aluminum substrate has a roughness of Ra0.01-Ra0.2.
Further, the roughness of the upper surface of the lower substrate is Ra0.01-Ra0.2.
Further, the upper base and the lower base are detachably and fixedly connected.
Furthermore, the annular convex rib is divided into an inner part and an outer part.
Furthermore, edge air holes are distributed between two annular ribs on the surface of the ceramic layer, air grooves are formed in the air passage aluminum matrix corresponding to the edge air holes, and air holes communicated with the edge air holes are formed in the upper surface of the air passage aluminum matrix corresponding to the air grooves to form a second air passage; the air source of the second air channel is different from the air source of the first air channel.
Furthermore, the circular truncated cones are uniformly distributed on the surface of the ceramic layer.
Further, the upper substrate has a dimension larger than a dimension of the lower substrate in a plane parallel to the surface of the electrostatic chuck.
The invention divides the traditional electrostatic chuck into two parts, namely an upper part and a lower part, and the two parts are assembled and fixed into a whole, thereby not only realizing the normal function of the electrostatic chuck, but also reducing the maintenance difficulty in the maintenance process.
Another object of the present invention is to disclose a plasma processing apparatus. The plasma processing device comprises a chamber, wherein the electrostatic chuck in each technical scheme is arranged in the chamber.
It is a further object of the present invention to disclose a method of manufacturing an electrostatic chuck.
The method comprises the following steps:
forming an upper substrate;
forming a lower substrate;
and laminating the upper substrate and the lower substrate, and fixedly connecting the upper substrate and the lower substrate into a whole.
Preferably, the step of forming the upper substrate includes:
opening a gas channel in an aluminum substrate;
forming a ceramic layer on an aluminum substrate;
and polishing the lower surface of the upper substrate.
Preferably, the step of opening gas channels in the aluminum substrate comprises:
arranging a gas channel on the surface of an aluminum block;
and welding an aluminum plate on the aluminum block to seal the air passage to form the aluminum matrix.
Preferably, the step of forming a ceramic layer includes:
and (3) carrying out sand blasting and plasma spraying on the surface of the aluminum plate to form a ceramic layer.
Preferably, the manufacturing scheme further comprises the step of machining the circular truncated cone and the annular convex rib at the edge on the ceramic layer.
Preferably, the circular truncated cone and the annular rib are machined by a machining method; or the circular truncated cone and the annular convex rib are processed by a spraying process.
Preferably, the manufacturing method further comprises the step of machining pores communicating with gas passages in the aluminum substrate on the ceramic layer and the aluminum substrate using a laser drilling method.
Preferably, the manufacturing method further comprises the step of machining edge air holes between the two annular ribs.
Preferably, the manufacturing method further comprises the step of forming an annular air passage at the inner edge of the aluminum block.
Preferably, the forming the lower substrate includes:
forming a condensing agent channel communicated with the outside on the surface of one aluminum block, and welding the surface provided with the condensing agent channel with the other aluminum block to form the lower matrix;
and polishing the upper surface of the lower substrate.
Preferably, after the grinding step, the flatness of the lower surface of the upper substrate and the upper surface of the lower substrate is 0.002 to 0.1 mm.
Preferably, after the grinding step, the roughness of the lower surface of the upper substrate and the upper surface of the lower substrate is ra0.01-ra0.2.
The significant difference of the present invention over prior art electrostatic chucks is that the electrostatic chuck is divided into upper and lower portions. Because the upper surface of the upper substrate is directly contacted with the semiconductor wafer, the upper substrate has more pollution opportunities in the wafer processing process and short service life, and therefore, when the upper substrate reaches the service life, the invention can only replace the upper substrate without integrally replacing a new electrostatic chuck, thereby saving the cost. When the surface of the upper substrate is damaged but has a maintenance value, a maintenance worker may only maintain the upper substrate. The upper substrate of the electrostatic chuck only has the air passage without a condensing agent passage, so that the number of the pore passages to be blocked in the maintenance process is reduced, the maintenance difficulty and the workload are reduced, and the adverse effects on the lower substrate in the working procedures of polishing, plasma spraying again and the like are avoided. According to the invention, air gap matching can be formed between the upper substrate and the lower substrate through machining, grinding and other modes, and after the upper substrate and the lower substrate are fixed into a whole, the performances of the aluminum base of the electrostatic chuck, such as electrical conductivity and thermal conductivity, are almost the same as those of the electrostatic chuck of the whole base, and no adverse effect is generated.
The beneficial effects of the invention also include:
1. the ceramic layer on the surface of the electrostatic chuck has better compactness and corrosion resistance.
2. The upper base body and the lower base body are fixedly connected in a detachable mode, and the two parts can be separated without damage when maintenance work is facilitated.
3. The multiple round tables are arranged on the surface of the ceramic layer and are in contact with the wafer, the coulomb force can adsorb the wafer, meanwhile, the surface of the ceramic layer below the round tables forms a communicating channel, after the gas channel is inflated, a gas layer is formed between the electrostatic chuck and the surface in contact with the wafer, heat is transferred through the gas layer, the wafer is heated more uniformly, and the yield of products is improved.
4. The second air channel is arranged at the edge of the contact surface of the electrostatic chuck and the wafer, so that the edge of the wafer is uniformly heated, and meanwhile, the gas in the first air channel is further prevented from escaping into the plasma chamber.
Drawings
FIG. 1 is a schematic view of an upper substrate of one embodiment of an electrostatic chuck of the present invention;
FIG. 2 is an internal schematic view of an upper substrate of an embodiment of an electrostatic chuck of the present invention;
FIG. 3 is a schematic cross-sectional view of one embodiment of an electrostatic chuck of the present invention;
FIG. 4 is an enlarged view of a portion of FIG. 1 at A;
fig. 5 is a flow chart of a method of fabricating an electrostatic chuck in accordance with an embodiment of the present invention.
Description of the reference numerals
Air holes 31, 32
Round table 111
An outlet 24
Detailed Description
The following detailed description of the present invention, taken in conjunction with the accompanying drawings and examples, is provided to enable the invention and its various aspects and advantages to be better understood. However, the specific embodiments and examples described below are for illustrative purposes only and are not limiting of the invention.
The term "connected", as used herein, unless otherwise expressly specified or limited, is to be construed broadly, as meaning either directly or through an intermediate connection. In the description of the present invention, it is to be understood that the directions or positional relationships indicated by the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", and the like are based on the directions or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present invention.
The invention provides an electrostatic chuck. The invention divides the traditional electrostatic chuck into an upper part and a lower part, combines the two parts into one through assembly, and works normally.
Fig. 1 to 3 are views illustrating an embodiment of the present invention, and as shown in the drawings, the electrostatic chuck in the embodiment is divided into an upper substrate 10 and a lower substrate 20. Wherein the upper substrate 10 includes an aluminum substrate 12 and a ceramic layer 11 attached to the surface thereof. The surface of the ceramic layer 11 is distributed with a plurality of truncated cones 111 protruding the surface of the ceramic layer. The plurality of round tables 111 may be randomly distributed on the surface of the ceramic layer. In a preferred embodiment, the truncated cones are uniformly distributed on the surface of the electrostatic chuck. When the wafer/liquid crystal panel is placed on the surface of the electrostatic chuck, the circular table 111 contacts with the wafer/liquid crystal panel, and the ceramic layer accumulates electrostatic charges after being electrified to generate coulomb force to firmly adsorb (also called clamping) the wafer/liquid crystal panel for process treatment.
In a preferred embodiment, gas channels 30 are distributed in the aluminum substrate 12 of fig. 1 to 3, and the upper surface of the aluminum substrate is provided with gas holes 31, wherein the gas holes 31 are communicated with the gas channels 30 inside. As shown in fig. 2, the gas passage 30 is a groove body that linearly diverges from the center to the periphery. In the center of the aluminum substrate 12, a center gas inlet hole 33 is formed to communicate the gas passage 30 with the lower surface, and is communicated with a center gas source 35 through a hole in the center of the lower substrate 20. The ceramic layer 11 has a plurality of air holes 32 distributed on the surface thereof, and the air holes 32 on the ceramic layer 11 correspond to the air holes 31 on the upper surface of the aluminum substrate 12 in position, are vertically through, and communicate with the gas passages 30. The pores 31, 32 have a smaller diameter, also called micropores. At the edge of the surface of the ceramic layer 11, an annular ridge 112 is provided which is higher than the surface of the ceramic layer. The air hole 31, the air hole 32, the air channel 30 and the central air inlet hole 33 form a first air passage and are communicated with a central air source 35. When the electrostatic chuck adsorbs the wafer/liquid crystal panel, inert gas, such as argon, nitrogen, etc., is introduced into the gas channel 30 from the central gas source 35 through the central gas inlet hole 33, and the gas enters the space formed by the surface of the ceramic layer 11 except the circular truncated cone, the lower surface of the wafer and the annular rib 112 from the gas holes 31, 32, and fills the space with the gas to form a gas layer. During heating, the gas layer transfers heat to the wafer/liquid crystal panel, and compared with heat transfer between solids, the gas layer enables the wafer/liquid crystal panel to be heated more uniformly.
The annular ridge 112 seals the gas between the surface of the ceramic layer 11 and the lower surface of the wafer/lcd panel to prevent the gas from overflowing into the plasma processing chamber and adversely affecting the process.
In order to better prevent the gas from overflowing into the chamber, another embodiment of the present invention may arrange the annular ribs 112 in two rows, and a circle of air holes, called edge air holes 41, is arranged on the surface of the ceramic layer located between the two rows of annular ribs 112. An annular gas groove 40 is arranged at the position of the gas hole at the corresponding edge in the aluminum matrix 12, and the surface of the aluminum matrix 12 is provided with the gas hole to communicate the edge gas hole 41 with the annular gas groove 40. The annular air groove 40 is communicated with the edge air holes 41 to form a second air channel. The secondary air channels are supplied separately by an edge air supply 45. The gas pressure of the second gas passage is less than the gas pressure of the first gas passage. When the gas in the first air passage overflows from the inner ring annular rib 112 due to over-pressure or other reasons, the gas enters the second air passage and can be blocked by the outer ring annular rib 112, so that the gas is prevented from entering the chamber. The outer ring annular convex edge plays a role in preventing gas from overflowing to the second layer of protection in the cavity. The diameter of the edge pores 41 is also small and may be referred to as micropores. The plurality of edge air holes 41 can be uniformly distributed in the middle of the two circles of annular ribs.
As shown in fig. 3, the lower substrate 20 includes an aluminum substrate 22. A coolant channel 21 is provided in the aluminum matrix 22. The inlet 23 and the outlet 24 of the coolant channel 21 are provided on the bottom surface of the aluminum substrate 22.
The condensing agent in the condensing agent channel can be water or other liquid which can be used as a cooling agent.
The lower surface of the upper substrate 10 and the upper surface of the lower substrate 20 are subjected to surface polishing, and then the upper substrate and the lower substrate are laminated and fixedly connected into a whole.
It should be noted that the closer the contact surfaces of the upper substrate and the lower substrate of the present invention are bonded, the closer the performance of the electrostatic chuck formed by the two parts fixed together with a complete whole body becomes. In this embodiment, the flatness of the lower surface of the upper substrate 10 and the upper surface of the lower substrate 20 reaches 0.002mm, and the surface roughness is ra0.01, and after the two parts are connected, the conductivity and the heat conductivity of the two parts are basically not different from those of an electrostatic chuck with an integral aluminum base. Practice proves that when the flatness of the lower surface of the upper substrate 10 and the upper surface of the lower substrate 20 is 0.002-0.1mm and the surface roughness is Ra0.01-Ra0.2, the electrostatic chuck fixedly connected into a whole can meet the actual use requirement.
In order to conveniently separate the upper base body and the lower base body without damage during maintenance, the upper base body and the lower base body are fixedly connected in a detachable mode, such as screw connection or clamping connection through other parts.
In order to avoid the damage of the ceramic layer caused by the plasma jet to the substrate accidentally during the use process, in the plane parallel to the surface of the electrostatic chuck, the size of the upper substrate is larger than that of the lower substrate, as shown in fig. 3, D > D, so that the plasma beam can not be jetted to the substrate due to the obstruction of the upper substrate when the plasma beam is used for operating the wafer/liquid crystal panel along the direction F. Namely, the aluminum-based part of the lower part has smaller size than that of the aluminum-based part of the upper part, so that the corrosion of the aluminum-based part caused by the plasma beam splashing on the lower substrate can be effectively prevented.
As a further protection of the susceptor, the present invention applies and covers a ceramic layer on the side surfaces of the susceptor, that is, the side surfaces of the upper substrate 10 and the lower substrate 20. The ceramic layer can well protect the metal material covered by the ceramic layer.
The thickness of the ceramic layer after spraying is kept in the range of 10-900 μm, the surface roughness is in the range of Ra3-Ra9, and the ceramic layer is finally processed into surface roughness of Ra0.1-3 due to the requirement of an adsorption surface.
In the present invention, the aluminum substrate of the upper substrate and the lower substrate are integrally connected to each other, and then function as an electrode. The aluminum substrate is connected with an external circuit through an electrode joint to form a loop, and high voltage is applied to the electrostatic chuck.
The invention also discloses a plasma processing device. The electrostatic chuck is arranged in a chamber of the plasma processing device.
The invention also discloses a manufacturing method of the electrostatic chuck. The manufacturing method of the invention is based on the split type electrostatic chuck, and comprises the following main steps:
respectively forming an upper substrate and a lower substrate; and laminating the upper substrate and the lower substrate and fixedly connecting the upper substrate and the lower substrate into a whole. The formation of the upper substrate and the lower substrate can be completed simultaneously in different procedures without any order.
As shown in fig. 5, the specific steps for forming the upper substrate are:
s10: a gas channel is arranged on the surface of an aluminum block.
S11: and welding an aluminum plate on the aluminum block to block the air passage to form an aluminum matrix internally distributed with gas passages.
S12: and (3) carrying out sand blasting and plasma spraying on the surface of the aluminum plate to form a ceramic layer.
After the ceramic layer is formed, a circular truncated cone and an annular rib at the edge may be formed on the upper surface of the ceramic layer, as in S13.
Pores communicating with gas passages in the aluminum substrate are formed on the upper surface of the ceramic layer and the aluminum substrate, as in S14.
When the circular truncated cone and the annular rib are machined by using a spraying process, the step S13 is firstly carried out, and then the step S14 is carried out, so that adverse effects on the inner wall of the machined hole are avoided in the spraying process; when the circular truncated cone and the annular rib are machined by the machining method, the sequence of step S13 and step S14 may be interchanged.
Because the diameters of the air holes which are processed on the upper surface of the ceramic layer and the aluminum matrix and communicated with the air channel in the aluminum matrix are smaller, the laser drilling mode is easier to realize.
S15: and polishing the lower surface of the upper substrate to finish the manufacturing of the upper substrate.
Forming the lower substrate includes:
s20: and arranging a condensing agent channel communicated with the outside on the surface of one aluminum block, and welding the surface provided with the condensing agent channel with the other aluminum block.
S21: and polishing the upper surface of the lower substrate.
The manufactured upper and lower substrates are stacked and fixedly connected together by a fastening member such as a screw, as by step S30, thereby completing the manufacture of the final electrostatic chuck.
The invention relates to some machining processes, such as drilling a threaded hole in a lower substrate, a hole communicated with a central gas source, a hole for an electrode joint to pass through, drilling a central gas inlet hole in the lower surface of an upper substrate, a screw hole at the edge and the like, belonging to the field of realization of the machining process according to actual needs, and further description is omitted.
When the electrostatic chuck with two annular convex edges is manufactured, the following steps are added in the manufacturing process:
in step S10, a step of forming an annular groove in the edge of the aluminum block is further included;
in step S14, air holes that can communicate with the annular grooves are formed in the surface portion of the ceramic layer between the two annular ridges.
Specifically, in steps S15 and S21, the flatness of the lower surface of the upper substrate and the upper surface of the lower substrate is 0.002 to 0.1mm, and the roughness is Ra0.01 to Ra0.2.
The electrostatic chuck of the invention has the use principle that high voltage is applied to the electrostatic chuck through the electrode joint, a loop is formed through plasma in the cavity, coulomb electrostatic charge is generated on the upper surface of the high-resistance ceramic layer, and the wafer is adsorbed through the electrostatic charge, so that the action of clamping the wafer/liquid crystal panel (namely chuck) is completed.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (26)
1. An electrostatic chuck comprising an upper substrate and a lower substrate;
the upper substrate comprises an aluminum substrate and a ceramic layer, and the ceramic layer is fixed on the upper surface of the aluminum substrate; the upper substrate and the lower substrate are laminated and fixedly connected into a whole, and the aluminum substrate and the lower substrate are connected into a whole and then are used as electrodes to be connected with an external circuit;
the aluminum base of the upper base body is an air flue aluminum base body, a gas channel is distributed in the aluminum base, and the upper surface of the aluminum base is provided with a gas hole communicated with the gas channel;
a plurality of air holes are distributed on the surface of the ceramic layer, the air holes on the surface of the ceramic layer are communicated with the gas channel through the air holes on the upper surface of the air channel aluminum substrate to form a first air channel, and the first air channel is communicated with a first gas source;
the ceramic layer is provided with a plurality of circular truncated cones, annular convex edges higher than the surface of the ceramic layer are arranged on the surface edges of the ceramic layer, and the height of the convex edges is equal to that of the circular truncated cones;
the annular convex edges are arranged in an inner and outer way, edge air holes are distributed between the two annular convex edges on the surface of the ceramic layer, air grooves are formed in the air passage aluminum matrix at positions corresponding to the edge air holes, and air holes communicated with the edge air holes are formed in the upper surface of the air passage aluminum matrix at positions corresponding to the air grooves to form a second air passage; the air source of the second air channel is different from the air source of the first air channel.
2. The electrostatic chuck of claim 1, wherein a coolant channel is distributed in the lower substrate and communicates with the outside.
3. The electrostatic chuck of claim 1, wherein the ceramic layer has a thickness of 10-900 μm and a surface roughness of ra0.1-Ra3 after processing.
4. The electrostatic chuck of claim 1, wherein the sides of said upper and lower substrates are sprayed with a ceramic layer.
5. The electrostatic chuck of claim 4, wherein the ceramic layer has a thickness of 10-900 μm and a surface roughness of ra0.1-Ra3 after processing.
6. The electrostatic chuck of claim 1, wherein the lower surface of the aluminum substrate has a flatness of 0.002-0.1 mm.
7. The electrostatic chuck of claim 1, wherein the flatness of the upper surface of the lower substrate is 0.002-0.1 mm.
8. The electrostatic chuck of claim 1, wherein the lower surface of the aluminum substrate has a roughness of ra0.01-ra0.2.
9. The electrostatic chuck of claim 1, wherein the roughness of the upper surface of the lower substrate is ra0.01-ra0.2.
10. The electrostatic chuck of claim 1, wherein said upper substrate and said lower substrate are removably secured to each other.
11. The electrostatic chuck of claim 1, wherein said circular truncated cones are uniformly distributed on the surface of said ceramic layer.
12. The electrostatic chuck of claim 1, wherein a dimension of said upper substrate is greater than a dimension of said lower substrate in a plane parallel to a surface of said electrostatic chuck.
13. A plasma processing apparatus comprising a chamber, wherein the electrostatic chuck of any of claims 1-12 is disposed within the chamber.
14. A method of manufacturing an electrostatic chuck according to any of claims 1 to 12, comprising the steps of:
forming an upper substrate comprising an aluminum substrate and a ceramic layer secured to an upper surface of the aluminum substrate;
forming a lower substrate;
and laminating the upper substrate and the lower substrate, fixedly connecting the upper substrate and the lower substrate into a whole, and connecting the aluminum substrate and the lower substrate into a whole as an electrode to be connected with an external circuit.
15. The method of manufacturing of claim 14, wherein the step of forming the upper substrate comprises:
opening a gas channel in the aluminum substrate;
forming a ceramic layer on an aluminum substrate;
and polishing the lower surface of the upper substrate.
16. The method of manufacturing of claim 15, wherein the step of opening gas passages in the aluminum substrate comprises:
arranging a gas channel on the surface of an aluminum block;
and welding an aluminum plate on the aluminum block to seal the air passage to form the aluminum matrix.
17. The method of manufacturing according to claim 15, wherein the step of forming a ceramic layer comprises:
and (3) carrying out sand blasting and plasma spraying on the surface of the aluminum plate to form a ceramic layer.
18. The method of claim 17, further comprising the step of forming the circular truncated cone and the peripheral annular ridge on the ceramic layer.
19. The method of manufacturing of claim 18, wherein the circular truncated cone and the annular rib are machined by a machining process.
20. The method of manufacturing of claim 18, wherein said circular table and said annular rib are machined using a spray process.
21. The method of manufacturing of claim 17, further comprising the step of machining pores in the ceramic layer and the aluminum matrix in communication with gas passages in the aluminum matrix using a laser drilling process.
22. The method of claim 15, further comprising the step of forming edge vents between the two annular ridges.
23. The method of manufacturing of claim 22 further comprising the step of forming an annular air passage at an inner edge of the aluminum block.
24. The method of manufacturing of claim 14, wherein the forming the lower substrate comprises:
forming a condensing agent channel communicated with the outside on the surface of one aluminum block, and welding the surface provided with the condensing agent channel with the other aluminum block to form the lower matrix;
and polishing the upper surface of the lower substrate.
25. The manufacturing method according to claim 15 or 24, wherein after the grinding step, the flatness of the lower surface of the upper substrate and the upper surface of the lower substrate is 0.002 to 0.1 mm.
26. The manufacturing method according to claim 15 or 24, wherein after the grinding step, the roughness of the lower surface of the upper substrate and the upper surface of the lower substrate is ra0.01-ra0.2.
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| US7672110B2 (en) * | 2005-08-29 | 2010-03-02 | Applied Materials, Inc. | Electrostatic chuck having textured contact surface |
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| CN1870242A (en) * | 2005-05-23 | 2006-11-29 | 东京毅力科创株式会社 | Electrostatic absorption electrode and treating apparatus |
| CN101471279A (en) * | 2007-12-27 | 2009-07-01 | 新光电气工业株式会社 | Electrostatic chuck and substrate temperature adjusting-fixing device |
| JP2009302347A (en) * | 2008-06-13 | 2009-12-24 | Shinko Electric Ind Co Ltd | Electrostatic chuck and substrate temperature adjusting and fixing device |
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| CN110246745A (en) | 2019-09-17 |
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