KR20060121702A - Electrostatic adsorption electrode and processing apparatus - Google Patents

Abstract

An electrostatic absorption electrode and a processing apparatus are provided to prevent an abnormal discharge in a gas passage and easily repair when the abnormal discharge occurs. An electrostatic absorption electrode is structured by a plurality of bases(30,31), which are separated from each other. The electrostatic absorption electrode has a mounting surface for mounting a processed object. A heat transfer medium passage contacts with the mounting surface at a gap of at least two bases, and supplies a heat transfer medium to another surface of the processed object. A surface of the base for forming at least the heat transfer medium passage is coated with insulation materials. The heat transfer medium passage is formed to have an angle with respect to a perpendicular direction.

Description

Electrostatic adsorption electrode and processing apparatus {ELECTROSTATIC ADSORPTION ELECTRODE AND PROCESSING APPARATUS}

1 is a cross-sectional view showing a schematic configuration of a plasma etching apparatus according to a first embodiment of the present invention;

2 is a plan view of the electrostatic chuck,

3 is a cross-sectional view taken from the line AA ′ of FIG. 2;

4 is a view showing a state in which the first substrate and the second substrate are separated.

5A and 5B are schematic views for explaining the discharge preventing member, FIG. 5A is a perspective view, and FIG. 5B is a sectional view;

6 is a plan view of an electrostatic chuck according to another embodiment;

7 is a plan view of an electrostatic chuck according to still another embodiment.

Explanation of symbols for the main parts of the drawings

1 processing apparatus (plasma etching apparatus) 2 chamber (processing chamber)

3: insulation plate 4: susceptor

5: electrostatic chuck 6: electrode

8 dielectric material film 11 shower head (gas supply means) 20 exhaust device 30 first substrate

31: 2nd base material 32: Ceramics thermal spray coating

33: O ring 34: spiral shield ring

35 discharge preventing member 50 convex portion

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic adsorption electrode and a processing apparatus. Specifically, in the manufacturing process of a flat panel display (FPD), the electrostatic adsorption electrode and the electrostatic adsorption electrode used for mounting a substrate, such as a glass substrate, It relates to a processing device.

In the manufacturing process of FPD, plasma processing, such as dry etching, sputtering, CVD (Chemical Vapor Deposition), is performed with respect to the glass substrate which is a to-be-processed object. For example, a pair of parallel plate electrodes (upper and lower electrodes) are arranged in a chamber, and a glass substrate is mounted on a susceptor (substrate mount) that functions as a lower electrode, and then a processing gas is supplied to the chamber. At the same time, high frequency electric power is applied to at least one of the electrodes to form a high frequency electric field between the electrodes, and a plasma of the processing gas is formed by the high frequency electric field to perform plasma treatment on the glass substrate. At this time, the glass substrate is capable of being adsorbed and fixed by, for example, a coulomb force by an electrostatic adsorption electrode provided on the susceptor.

By the way, in order to promote heat transfer to a glass substrate, supplying heat transfer gases, such as He, to the back surface side of a glass substrate is performed (for example, patent document 1, patent document 2). The heat transfer gas is introduced into the gap between the surface of the susceptor and the rear surface of the glass substrate mounted thereon through a gas flow path formed through the electrostatic adsorption electrode from the susceptor side. In this gas flow path, anodization (anodic oxidation) or the like is performed on the surface of the susceptor made of Al or the like so as not to be exposed.

[Patent Document 1] Japanese Unexamined Patent Publication No. 1997-252047 (Fig. 1, etc.)

[Patent Document 2] Japanese Unexamined Patent Publication No. 1994-342843 (Fig. 4, etc.)

In the gas flow path formed so as to penetrate the electrostatic adsorption electrode from the susceptor, which is also the lower electrode, when the alumite treatment is insufficient, abnormal discharge is likely to occur at that portion. In fact, most of the abnormal discharges are generated in the gas flow path of the electrostatic adsorption electrode. In addition, when abnormal discharge occurs in the gas flow path of the electrostatic adsorption electrode, or when alumite is consumed little by little during use, and the insulation is deteriorated, repair of the inside of the hole is practically difficult. there was.

The present invention has been made in view of the above circumstances, and an object thereof is to provide an electrostatic adsorption electrode which can prevent abnormal discharge in the gas flow path of the electrostatic adsorption electrode and which can be easily repaired even if abnormal discharge occurs in the gas flow path. do.

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, in the 1st viewpoint of this invention, it is comprised by the several base material which is isolate | separable from each other, and has a mounting surface which mounts a to-be-processed object, reaches the said mounting surface in the clearance gap of at least two base materials, The electrostatic adsorption electrode provided with the heat-transfer medium flow path which supplies a heat-transfer medium toward the back surface of a lid body is provided.

In the electrostatic adsorption electrode of the first aspect, at least a surface of the substrate forming the heat transfer medium flow path may be covered with an insulating material.

The heat transfer medium flow path may be formed at an angle with respect to the vertical direction.

The heat transfer medium flow passage may be divided into a central mounting region corresponding to the central portion of the target object on which the mounting surface is mounted, and a peripheral mounting region corresponding to the peripheral portion. In this case, each of the divided mounting surfaces may be an electrostatic adsorption surface, and these may independently have an electrostatic adsorption function.

Moreover, the some convex part may be formed in the said center mounting area. Alternatively, a plurality of grooves may be formed in the center mounting region.

The stepped portion may be formed in the peripheral mounting region.

In the 2nd viewpoint of this invention, the processing apparatus provided with the electrostatic adsorption electrode of the said 1st viewpoint is provided. This processing apparatus may be used for the manufacture of a flat panel display.

EMBODIMENT OF THE INVENTION Hereinafter, the preferred form of this invention is described, referring drawings.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows the plasma etching apparatus which is an example of the processing apparatus provided with the electrostatic chuck as an electrostatic adsorption electrode which concerns on 1st Embodiment of this invention. As shown in FIG. 1, the plasma etching apparatus 1 is comprised as a capacitively coupled parallel plate plasma etching apparatus which etches the board | substrate G, such as a glass substrate for FPD which is a rectangular to-be-processed object. Here, examples of the FPD include a liquid crystal display (LCD), a light emitting diode (LED) display, an electroluminescence (EL) display, a fluorescent fluorescence display (VFD), a plasma display panel (PDP), and the like. In addition, the processing apparatus of this invention is not limited only to a plasma etching apparatus.

This plasma etching apparatus 1 has the chamber 2 shape | molded in the shape of the square cylinder which consists of aluminum whose surface was anodized (anodic oxidation treatment), for example. In the bottom part of the chamber 2, a prismatic insulating plate 3 made of an insulating material is provided, and a susceptor 4 for mounting the substrate G is provided on the insulating plate 3. The susceptor 4, which is a substrate mounting table, has a susceptor base 4a and an electrostatic chuck 5 provided on the susceptor base 4a.

The insulating film 7 is formed in the outer periphery of the susceptor base material 4a, and the dielectric material film 8, such as a ceramic thermal sprayed film, is formed in the upper surface of the electrostatic chuck 5, respectively. The electrostatic chuck 5 applies the direct current voltage from the direct current power source 26 to the electrode 6 embedded in the dielectric material film 8 via the power supply line 27, for example, by using a coulomb force. Electrostatic adsorption. In addition, the detailed structure of the electrostatic chuck 5 is mentioned later.

The gas passage 9 penetrating these is formed in the said insulating plate 3, the susceptor base material 4a, and the said electrostatic chuck 5, respectively. The heat transfer gas, for example, He gas, is supplied to the back surface of the substrate G, which is the object to be processed, through the gas passage 9.

That is, the heat transfer gas supplied to the gas passage 9 is once diffused in the horizontal direction via the gas reservoir 9a formed at the boundary between the susceptor base 4a and the electrostatic chuck 5 and then into the electrostatic chuck 5. It passes through the formed gas supply communication hole 9b and the gas supply slit 9c, and is ejected to the back surface side of the board | substrate G from the surface of the electrostatic chuck 5. In this way, cooling heat of the susceptor 4 is transmitted to the substrate G, and the substrate G is maintained at a predetermined temperature.

The coolant chamber 10 is provided inside the susceptor base material 4a. In this refrigerant chamber 10, for example, a refrigerant such as a fluorine-based liquid is introduced through the refrigerant inlet tube 10a, and is discharged and circulated through the refrigerant discharge tube 10b so that the cooling heat passes through the heat transfer gas. Heat transfer relative to (G).

Above the susceptor 4, a shower head 11 is provided which faces in parallel with the susceptor 4 and functions as an upper electrode. The shower head 11 is supported at the upper portion of the chamber 2, and has a plurality of discharge holes 13 having an internal space 12 therein and discharging the processing gas on a surface opposite to the susceptor 4. Formed. This shower head 11 is grounded and comprises a pair of parallel flat electrodes with the susceptor 4.

A gas inlet 14 is provided at an upper surface of the shower head 11, and a process gas supply pipe 15 is connected to the gas inlet 14, and a valve 16 and a process gas supply pipe 15 are connected to the process gas supply pipe 15. The process gas supply source 18 is connected via the massflow controller 17. Process gas for etching is supplied from the process gas source 18. As the processing gas, for example, a gas generally used in this field, such as a halogen gas, O ₂ gas, or Ar gas, can be used.

An exhaust pipe 19 is connected to a lower portion of the side wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19. The exhaust device 20 includes a vacuum pump such as a turbomolecular pump, and is thus configured to allow the inside of the chamber 2 to be evacuated to a predetermined reduced pressure atmosphere. In addition, the side wall of the chamber 2 is provided with a board | substrate carrying in / out 21 and the gate valve 22 which opens and closes this board | substrate carrying in / out 21, and the board | substrate ( G) is to be conveyed between adjacent load lock chambers (not shown).

A feeder line 23 for supplying high frequency power is connected to the susceptor 4, and a matcher 24 and a high frequency power supply 25 are connected to the feeder line 23. From the high frequency power supply 25, the high frequency power of 13.56 MHz is supplied to the susceptor 4, for example.

Next, the electrostatic chuck 5 will be described in detail with reference to FIGS. 2 to 4. FIG. 2 is a plan view of the electrostatic chuck 5 seen from above, and FIG. 3 is a sectional view seen from the line AA ′ in FIG. 2. 4 shows a state in which the electrostatic chuck 5 is disassembled.

As shown in FIG. 2, the electrostatic chuck 5 is a rectangular member in plan view corresponding to the shape of the substrate G, and the inner mounting region 5a and the inner mounting region corresponding to the central portion of the substrate G are shown in FIG. It is formed so as to surround 5a and has the outer mounting area | region 5b corresponding to the periphery of the board | substrate G. As shown in FIG. The inner mounting region 5a and the outer mounting region 5b are partitioned through the gas supply slit 9c.

3 and 4, the inner mounting region 5a of the electrostatic chuck 5 constitutes an upper surface of the first base material 30 having a substantially tapered side surface, and the outer mounting region 5b. ) Forms the upper surface of the second base material 31 having a mortar-shaped recess into which the first base material 30 is inserted. That is, the electrostatic chuck 5 has a combined structure composed of the first base material 30 and the second base material 31 that can be separated from each other. Both the first base material 30 and the second base material 31 are made of a conductive material such as metal such as Al or carbon. In the bottom surface of the second base material 31, a recess for forming the gas reservoir 9a is formed at the boundary with the susceptor base material 4a.

As described above, the electrode 6 is embedded in the dielectric material film 8 of the electrostatic chuck 5. More specifically, the electrode 6a is embedded in the dielectric material film 8a on the first base material 30, and the electrode 6b is embedded in the dielectric material film 8b on the second base material 31, respectively. . The electrode 6a is connected to the feed line 27a branched from the feed line 27, and the electrode 6b is connected to the feed line 27b. Then, by applying a DC voltage from the DC power supply 26 to these electrodes 6a and 6b, the substrate G is electrostatically adsorbed by, for example, a coulomb force. In this embodiment, the structure which simultaneously feeds power to the electrodes 6a and 6b via the feed line 27 from one DC power supply 26 is employ | adopted. With this configuration, the configuration of the electrostatic chuck which is a conventional integrated structure can be used as it is to the susceptor base material 4a as it is. Therefore, it is possible to attach it to a conventional device without requiring a significant change in the device configuration. The electrodes 6a and 6b may be configured to be fed individually from each DC power supply, and in this case, the inner mounting region 5a and the outer mounting region 5b may exhibit an electrostatic adsorption function independently of each other. .

The dielectric material films 8 (8a, 8b), if they are made of a dielectric material, include not only the material but also a highly insulating material as well as those having a conductivity sufficient to allow the transfer of charge. The dielectric material film 8 is preferably made of ceramics in view of durability and corrosion resistance. At this time, the ceramics are not particularly limited, and typically, insulating materials such as Al ₂ O ₃ , Zr ₂ O ₃ , Si ₃ N ₄ , and the like may be used. The dielectric material film 8 is preferably formed by thermal spraying. After spraying, the surface may be smoothed by polishing.

As shown, a plurality of convex portions 50 are formed in the inner mounting region 5a, while a stepped portion 51 is formed in the outer mounting region 5b so as to surround the inner mounting region 5a. . It is preferable to make the height of the top surface of the step part 51 more than the height of the convex part 50. The convex portions 50 are formed in a predetermined pattern in the inner mounting region 5a on the dielectric material film 8, and the substrate G is formed on the upper ends of the convex portions 50 and the stepped portions. It is supported by the upper surface of 51. As a result, the convex portion 50 functions as a spacer spaced between the susceptor 4 and the substrate G. Therefore, by filling the space between the convex portions 50 with a heat transfer gas, for example, helium gas, the substrate G can be cooled uniformly, and the temperature of the substrate G can be uniformly maintained. Thus, plasma processing such as etching can be performed. It can implement uniformly over the whole surface of the board | substrate G. Further, since the stepped portion 51 can suppress the diffusion of the heat transfer gas to the surroundings, the heat transfer efficiency by the heat transfer gas can be improved. In addition, the deposit attached on the susceptor 4 is prevented from adversely affecting the substrate G.

In the plasma etching apparatus 1, by repeating the etching process, deposits such as substances etched from the substrate G are accumulated on the surface of the dielectric material film 8, but the convex portion 50 serves as a spacer. Therefore, even if deposits accumulate, it is difficult to contact the substrate G, thereby preventing the problem of etching irregularity.

There is no restriction | limiting in particular in the arrangement pattern of the convex part 50, For example, the arrangement of a zigzag lattice shape may be sufficient. It is preferable that the convex part 50 is formed in at least the upper part in a curved shape or a semi-rectangular shape, and makes point contact with the board | substrate G. As a result, the deposit can be made difficult to adhere to the contact portion between the convex portion 50 and the substrate G.

The convex part 50 is comprised with ceramics generally known as a material with high durability and corrosion resistance. The ceramics constituting the convex portion 50 are not particularly limited and typically include an insulating material such as Al ₂ O _{3 ,} Zr ₂ O ₃ , Si ₃ N _4, or the like, and somewhat conductive like SiC. It may have a. It is preferable to form the convex part 50 by thermal spraying, and it is more preferable to form thermal spraying integrally with the dielectric material film 8.

In this embodiment, since the 1st base material 30 and the 2nd base material 31 were isolate | separable, the surface shape (surface pattern) of the inner mounting area | region 5a is simplified by replacing the 1st base material 30. FIG. Can be changed. That is, the distribution pattern of the convex part 50 can be arbitrarily changed, and in addition to having the convex part 50, for example, it can be changed into having a groove on the upper surface of the first base material 30 or having a flat plane. Can be. In this case, the second base material 31 may not be replaced. Therefore, the degree of freedom in selecting the surface shape of the mounting surface can be increased in accordance with the purpose of etching.

Moreover, in order to reduce the load by heat, you may select the 1st base material 30 and the 2nd base material 31 from another material. Conventionally, in the case of high temperature means, the susceptor base material 4a was changed into the material with a small thermal expansion coefficient, such as carbon, and the tolerance by heat load was improved. However, since the substrate of the conventional integrated electrostatic chuck is made of metal such as Al, there has been a problem that component interference or the like occurs due to the difference in thermal expansion rate at the joint surface of carbon with small thermal expansion rate and large Al. On the other hand, since the electrostatic chuck needs to have an adsorption function by thermally forming the dielectric material film 8 on its surface, expansion of the substrate by heat becomes a factor causing cracking of the dielectric material film 8. In this embodiment, since the 1st base material 30 and the 2nd base material 31 were set as the structure which can be isolate | separated, for example, the 1st base material 30 is made of carbon with little thermal expansion in order to prevent the dielectric material film 8 from cracking. In order to relieve thermal stress between the susceptor base material 4a and the material Al of the susceptor base material 4a, the same material Al or a material such as stainless steel (SUS) is used. It is also possible to select. In addition, since the gas supply slit 9c exists between the first base material 30 and the second base material 31, thermal stress can be alleviated. Thereby, it becomes possible to improve high temperature tolerance.

The lower surface of the first base material 30 is in contact with the bottom surface of the concave portion of the second base material 31 and is fixed by, for example, a joining means (not shown) such as a screw. As shown in FIG. 3, in the state which combined the 1st base material 30 and the 2nd base material 31, the clearance gap is formed between both, and this clearance gap functions as the gas supply slit 9c as mentioned above. do. The gas supply slit 9c is formed so that the circumference | surroundings of the 1st base material 30 may be enclosed. Thus, by supplying heat transfer gas through a slit rather than a narrow hole, conductance of a flow path can be improved significantly and heat transfer efficiency can be improved.

In addition, although the gas supply slit 9c has the inclined flow path structure in this embodiment, it is not limited to this, The 1st base material 30 is formed in cylinder shape, and the 2nd base material 31 is formed in cylindrical shape. The gas supply slits may be formed vertically between the two substrates. However, since the gas flow path becomes an opening where the lower electrode does not exist when viewed from above the substrate G at the time of plasma processing regardless of the slit or the hole, when the flow path is formed vertically, Etching nonuniformity tends to arise in the area | region of the board | substrate G. As in this embodiment, it is preferable to incline the gas supply slit 9c and to make the vertical flow path as few as possible from the viewpoint of preventing etching unevenness. It is preferable that the inclination angle of the gas supply slit 9c be in the range of approximately 45 ° ± 15 ° with respect to the vertical direction in consideration of the conductance of the flow path and the like.

The wall surfaces of the first base material 30 and the second base material 31 constituting the gas supply slit 9c are covered with an insulating material, for example, a ceramic thermal sprayed coating 32 so that materials such as Al are not exposed. It is. This ceramic thermal sprayed coating 32 prevents abnormal discharge in the gas supply slit 9c. In the conventional electrostatic chuck, since the flow path of the heat transfer gas was a hole, abnormal discharge was prevented by anodizing the inside thereof. However, it is difficult to uniformly alumite treatment in the narrow hole, and the alumite easily deteriorates and is sure. It was difficult to prevent abnormal discharge. In this embodiment, insulation can be improved by covering the wall surfaces of the 1st base material 30 and the 2nd base material 31 with the ceramic thermal sprayed coating 32.

Since the surface of the ceramic thermal sprayed coating 32 needs to be thermally sprayed in the state which separated the 1st base material 30 and the 2nd base material 31, it can form easily. In the case of the insulation by conventional alumite treatment, the deterioration of the insulation due to the consumption of alumite has become a problem, but since the deterioration of the insulation hardly occurs in the ceramic thermal sprayed coating 32, abnormal discharge in the gas flow path can be reliably prevented. have. In addition, even if abnormal discharge occurs in the gas supply slit 9c, since the 1st base material 30 and the 2nd base material 31 should be repaired by a thermal spraying, repair is easy and it is easy to repair abnormal discharge. The down time of the accompanying plasma etching apparatus 1 can be shortened.

The gas supply slit 9c communicates with the junction part of the 1st base material 30 and the 2nd base material 31 from the mounting surface of the electrostatic chuck 5, and the gas supply slit 9c is in the vicinity of the said junction part. In order to prevent gas leakage from occurring, an O-ring 33 serving as a sealing means is provided to ensure the sealing property of the joint surface. In addition, a spiral shield ring 34 is provided inside the O ring 33 to ensure the same potential of the first base material 30 and the second base material 31.

As described above, the heat transfer gas is supplied from the gas reservoir 9a to the gas supply slit 9c via the gas supply communication hole 9b. Although only one gas supply communication hole 9b is shown in FIG. 3 and FIG. 4, for example, the gas supply communication hole 9b is provided in four or more places so that heat transfer gas can be equally distributed with respect to the gas supply slit 9c. It is preferable to install).

Discharge prevention member 35 is provided in each gas supply communication hole 9b. 5A is an external perspective view of the discharge preventing member 35, and FIG. 5B is a sectional view. The discharge preventing member 35 is made of an insulator such as a synthetic resin, and a plurality of bent labyrinth flow passages 35a are formed. In addition, although many flow paths 35a are formed in the actual discharge preventing member 35, they are very simplified in FIG. The discharge preventing member 35 having such a structure is fitted into the gas supply communication hole 9b, and the bent and narrow flow path structure allows the gas supply communication hole 9b in which the ceramic thermal sprayed coating 32 is not formed. It acts to prevent abnormal discharge in.

Next, the processing operation in the plasma etching apparatus 1 configured as described above will be described.

First, after the gate valve 22 is opened, the substrate G to be processed is loaded into the chamber 2 from the load lock chamber (not shown) through the substrate loading / unloading port 21 and formed on the susceptor 4. It is mounted on the electrostatic chuck 5. In this case, the transfer of the substrate G is carried out via a lifter pin (not shown) which is inserted into the susceptor 4 and protrudes from the susceptor 4. Thereafter, the gate valve 22 is closed, and the inside of the chamber 2 is evacuated to a predetermined degree of vacuum by the exhaust device 20.

Thereafter, the valve 16 is opened so that the flow rate of the processing gas from the processing gas supply source 18 is adjusted by the massflow controller 17, and then the shower passes through the processing gas supply pipe 15 and the gas inlet 14. It is introduced into the inner space 12 of the head 11 and is uniformly discharged to the substrate G through the discharge hole 13, so that the pressure in the chamber 2 is maintained at a predetermined value.

In this state, a high frequency electric power is applied from the high frequency power supply 25 to the susceptor 4 via the matching unit 24, thereby providing a high frequency electric field between the susceptor 4 as the lower electrode and the shower head 11 as the upper electrode. , The processing gas dissociates to form a plasma, and the etching treatment is performed on the substrate G. At this time, temperature control is efficiently performed by supplying the heat transfer gas to the back surface side of the board | substrate G via the gas supply slit 9c.

After the etching process is performed in this manner, the application of the high frequency power from the high frequency power supply 25 is stopped, and the gas introduction is stopped. Then, the pressure in the chamber 2 is reduced to a predetermined pressure. The gate valve 22 is opened, and the substrate G is carried out from the inside of the chamber 2 to the load lock chamber (not shown) via the substrate loading / unloading opening 21 to finish the etching process of the substrate G. As described above, the substrate G can be etched while the substrate G is electrostatically attracted by the electrostatic chuck 5 and the temperature is adjusted.

In addition, this invention is not limited to embodiment described above. For example, the processing apparatus of the present invention has been described with reference to an RIE type capacitively coupled parallel plate plasma etching apparatus that applies a high frequency power to a lower electrode, but is not limited to the etching apparatus for ashing and CVD film formation. It is applicable to other plasma processing apparatuses, such as a type which supplies high frequency electric power to an upper electrode, and is not limited to a capacitive coupling type | mold, but may be an inductive coupling type | mold. The substrate to be processed is not limited to the glass substrate for FPD, but may be a semiconductor wafer.

In addition, in the said embodiment, the electrostatic chuck 5 is set as the combination structure of the 1st base material 30 and the 2nd base material 31, and the mounting surface of the board | substrate G is the inner mounting area 5a and the outer mounting area. Although divided into 2 by (5b), it is not limited to this form.

For example, similarly to the electrostatic chuck 60 shown in FIG. 6, the gas supply slit 62 and the gas supply slit 63 are formed in double, and the mounting surface is center area | region 61a and the intermediate area | region (by these). 61b) It is also possible to have a triple structure so that it may be divided into three areas of the peripheral area 61c. In this way, the conductance of the heat transfer gas can be further improved, and a wider range of selection of the shape pattern of the mounting surface can be obtained, and the processing such as etching can be performed with higher precision. The reference numeral 64 in FIG. 6 is a stepped portion corresponding to the reference numeral 51 in FIG. 2.

In still another embodiment, the inner mounting regions 71a, 71b, 71c, 71d, which are divided into four, are formed on the mounting surface as in the electrostatic chuck 70 shown in FIG. The gas supply slit 72 may be formed so as to have a divided structure in which 71e) is formed. Also in this case, the conductance of the heat transfer gas can be further improved, and the choice of the shape pattern of the mounting surface becomes wider, so-called four, for example, processing four FPD products on one substrate G. It is advantageous when acquiring cotton. In other words, the surface shape of the four inner mounting regions 71a, 71b, 71c, and 71d can be changed in accordance with the processing contents of the substrate G, and a process such as high-density etching can be realized according to the processing purpose. In addition, the reference numeral 73 in FIG. 7 is a stepped portion corresponding to the reference numeral 51 in FIG.

According to the present invention, the electrostatic adsorption electrode is constituted by a plurality of substrates which can be separated from each other, and a heat transfer medium flow path for supplying a heat transfer medium toward the rear surface of the object is formed in the gap between at least two substrates. The conductance of the flow path is improved, and high heat transfer efficiency can be obtained.

In addition, since the electrostatic adsorption electrode is formed of a plurality of substrates that can be separated from each other, and a flow path is formed therebetween, the flow path can be easily insulated by, for example, thermal spraying, thereby ensuring abnormal discharge. You can prevent it. Moreover, even if abnormal discharge occurs, repair at low cost is possible in a short time. In addition, by configuring the electrostatic adsorption electrode with a plurality of substrates, the electrode surface pattern can be arbitrarily changed only by exchanging any one substrate. Therefore, the countermeasure against processing nonuniformity (nonuniformity of a process) in the etching process etc. which arise by the pattern dependence of the electrostatic adsorption electrode surface becomes easy.

Claims (11)

In the electrostatic adsorption electrode, A heat transfer medium flow path configured by a plurality of substrates which are separated from each other, having a mounting surface on which a workpiece is to be mounted, and reaching the mounting surface and supplying a heat transfer medium toward the rear surface of the workpiece in a gap between at least two substrates. Characterized in that Electrostatic adsorption electrode. The method of claim 1, At least the surface of the base material forming the heat transfer medium flow passage is covered with an insulating material. Electrostatic adsorption electrode. The method according to claim 1 or 2, The heat transfer medium flow path is formed with an angle with respect to the vertical direction Electrostatic adsorption electrode. The method of claim 1, The mounting surface is divided into a central mounting region corresponding to the central portion of the object to be mounted and a peripheral mounting region corresponding to the peripheral portion by the heat transfer medium flow path. Electrostatic adsorption electrode. The method of claim 4, wherein Wherein each of the divided mounting surfaces is an electrostatic adsorption surface. Electrostatic adsorption electrode. The method of claim 4, wherein Wherein each of the divided mounting surfaces independently has an electrostatic adsorption function Electrostatic adsorption electrode. The method of claim 4, wherein A plurality of convex portions are formed in the central mounting region. Electrostatic adsorption electrode. The method of claim 4, wherein A plurality of grooves are formed in the central mounting region Electrostatic adsorption electrode. The method of claim 4, wherein The stepped portion is formed in the peripheral mounting region, characterized in that Electrostatic adsorption electrode. The electrostatic adsorption electrode of Claim 1 provided with Processing unit. The method of claim 10, It is used for manufacture of a flat panel display, Processing unit.

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