KR100755874B1 - Electrostatic chuck for vacuum processing apparatus, processing apparatus having same and method for manufacturing same - Google Patents

Abstract

An electrostatic chuck of a vacuum processing apparatus, a vacuum processing apparatus with the same, and a method for manufacturing the electrostatic chuck are provided to reduce a manufacturing process and a manufacturing time by using protrusions formed on a preform. A plurality of protrusions are formed on a preform(110). An insulating layer(120) is formed on the preform on which the protrusions are formed. An electrostatic layer(130) is formed on the insulating layer. A dielectric(140) is formed on the electrostatic layer. The protrusions are formed by forming first dissection slots on the preform and then second dissection slots which are intersected with the first dissection slots. The protrusions are formed by a blast process, a milling process, and a shot peening process.

Description

Electrostatic chuck of vacuum processing apparatus, vacuum processing apparatus having same and manufacturing method of electrostatic chuck {Electrostatic Chuck for Vacuum Processing Apparatus, Processing Apparatus having Same and Method for Manufacturing Same}

1 is a cross-sectional view showing an example of an electrostatic chuck of a conventional vacuum processing apparatus.

Figure 2a is a partial cross-sectional view showing another example of the electrostatic chuck of the conventional vacuum processing apparatus.

FIG. 2B is a partial cross-sectional view illustrating a manufacturing process of the electrostatic chuck of FIG. 2A.

3 is a cross-sectional view showing a vacuum processing chamber of the vacuum processing apparatus according to the present invention.

4 is a partial cross-sectional view showing an electrostatic chuck installed in the vacuum processing chamber of FIG.

5A through 5D are cross-sectional views illustrating modified examples of the electrostatic chuck of FIG. 4.

6A is a plan view illustrating an arrangement of protrusions formed on a surface of the electrostatic chuck of FIG. 4.

6B is a plan view illustrating another arrangement of protrusions formed on the surface of the electrostatic chuck of FIG. 4.

7A to 7D are process diagrams showing a method of manufacturing an electrostatic chuck according to the present invention.

8A and 8B are process diagrams illustrating a process of forming a protrusion on a base material of an electrostatic chuck according to the present invention.

FIG. 8C is a partial cross-sectional view showing a cross section in the C-C direction in FIG. 8B.

***** Explanation of symbols for main parts of drawing *****

1: vacuum processing device

100: electrostatic chuck 110: the base material

120: insulating layer 130: electrostatic layer

140: dielectric layer 160: substrate

200: lower electrode

The present invention relates to a vacuum processing apparatus, and more particularly, to an electrostatic chuck of a vacuum processing apparatus.

The vacuum processing apparatus refers to a device for etching or depositing a substrate such as a glass or a semiconductor for an LCD panel using a physical or chemical reaction such as a plasma phenomenon in a vacuum state.

Such a vacuum processing apparatus includes a vacuum processing chamber for etching or depositing a substrate, a conveying chamber for conveying a substrate transferred from a load lock chamber into a vacuum processing chamber and conveying a vacuum processed substrate from the vacuum processing chamber. It is configured to include.

On the other hand, the vacuum treatment apparatus as described above is fixed to the substrate by using an electrostatic chuck during conveyance or vacuum treatment, the electrostatic chuck refers to a device for adsorption fixed to the substrate using an electrostatic force.

As shown in FIG. 1, an example of the electrostatic chuck is shown in Korean Laid-Open Patent Publication No. 2002-0070340.

As shown in FIG. 1, the electrostatic chuck 10 used in the conventional vacuum processing apparatus includes a metal base 11 and an insulating layer 12 formed on the base 11 and a direct current (DC) power source ( It comprises an electrode layer 13 formed on the insulating layer 12 and the insulating layer 14 formed on the electrode layer 13 to generate an electrostatic force by the power supply of the 17. Reference numeral 12a denotes an undercoat, that is, an intermediate layer, for improving adhesion between the base material 11 and the insulating layer 12.

In the electrostatic chuck 10 of the conventional vacuum processing apparatus having the above configuration, the substrate 16 is mounted on the insulating layer 14, and the insulating layer 14 is generated by generating electrostatic force by applying the power of the DC power supply 17. The substrate 16 stacked on the substrate 16 is fixed by suction.

However, the electrostatic chuck 10 of the conventional vacuum processing apparatus forms a curved surface, and a minute gap may occur between the substrate 16 and the electrostatic chuck 10. As described above, the gap formed between the substrate 16 and the electrostatic chuck 10 prevents impurities from accumulating or adsorbing the substrate 16 intact.

As a result, in the electrostatic chuck 10 of the conventional vacuum processing apparatus, the temperature distribution of the substrate 16 becomes uneven due to the gap formed between the substrate 16 and the electrostatic chuck 10, resulting in poor etching or deposition of the substrate 6. This has a problem that is caused.

On the other hand, as a solution to the above problems, an electrostatic chuck having a plurality of protrusions formed on the surface of the electrostatic chuck is proposed in Korean Laid-Open Patent Publication No. 2002-0066198.

Korean Patent Laid-Open Publication No. 2002-0066198, as shown in Figs. 2a and 2b, is formed by spraying ceramics on the insulating layer 14, which is the surface of the electrostatic chuck 20 using the opening plate 29. An electrostatic chuck 20 having protrusions 28 is shown.

The electrostatic chuck 20 is in point contact with the substrate 16 by the protrusions 28 formed on the insulating layer 14, thereby making the temperature distribution of the substrate 16 uniform and improving the substrate 16. Etching or deposition is done.

On the other hand, substrates such as glass for liquid crystal display (LCD) panels tend to be larger in size, and thus, the size of the electrostatic chuck for adsorption fixing and fixing of the substrate needs to be increased.

However, when protrusions are formed by thermal spraying using an opening plate on the surface of an electrostatic chuck used for vacuum processing of a large substrate, deflection may occur as the size of the opening plate increases, and a uniform opening plate having a large area may be formed. It is difficult to manufacture and due to the difficulty of uniformly coating a large area of the insulating layer it is impossible to form a protrusion uniformly.

In addition, in the conventional manufacturing process of the electrostatic chuck, the addition of a process for forming the projection on the surface of the electrostatic chuck, the production of a separate opening plate having an opening, the increase in the number of opening plates according to the large area of the substrate, the difficulty of production, There are many problems such as delay in manufacturing time and increase in defective rate, increase in manufacturing cost, difficulty in forming protrusions having a uniform height, according to the addition of the coating process for forming the protrusions using the spherical plate.

SUMMARY OF THE INVENTION An object of the present invention is to provide an electrostatic chuck, a vacuum processing apparatus, and a manufacturing method thereof, in which protrusions are uniformly formed regardless of the size of the electrostatic chuck, in order to solve the above problems.

Another object of the present invention is the electrostatic chuck, vacuum processing apparatus, and the like, which can be diversified so that the shape of the protrusion is suitable for the process characteristics, simplify the manufacturing process of the electrostatic chuck having the protrusion, and easily cope with the stabilization of the manufacturing process and the large area. It is to provide a manufacturing method.

The present invention was created in order to achieve the object of the present invention as described above, the present invention is a base material formed with a projection, an insulating layer formed on the base material, and formed on the insulating layer is applied to the electrostatic force by the application of a power source An electrostatic chuck of a vacuum processing apparatus comprising an electrostatic layer to be generated and a dielectric layer formed on the electrostatic layer is disclosed.

The insulating layer and the dielectric layer may be selected from the group consisting of Al ₂ O ₃ , ZrO ₃ , AlN, and Y ₂ O ₃ , respectively.

The vertical cross section of the protrusion may have a polygonal shape such as a quadrangle or trapezoid, a cone shape, or a curved shape. The protrusion may be formed such that the dielectric layer is in point contact with the substrate. In addition, the protrusion may be formed in a lattice, and an arrangement direction thereof may be inclined with one side of the electrostatic chuck.

The protrusion may be formed by machining or physical processing, and may be formed by blast processing, milling processing or shot peening processing.

An intermediate layer may be further formed between the base material and the insulating layer to improve adhesion to the base material.

The base material may be configured as a lower electrode connected to an external power source to generate a plasma reaction.

The present invention also discloses a vacuum processing apparatus including an electrostatic chuck having the above configuration. The vacuum processing apparatus may etch or deposit the substrate in a vacuum state.

In another aspect, the present invention provides a protrusion forming step of forming a protrusion on the base material, an insulating layer forming step of forming an insulating layer on the base material formed with the protrusion, an electrostatic layer forming step of forming an electrostatic layer on the insulating layer; Disclosed is a method of manufacturing an electrostatic chuck of a vacuum processing apparatus including a dielectric layer forming step of forming a dielectric layer on the electrostatic layer.

In the forming of the protrusions, the protrusions may be formed by forming a plurality of first cutting grooves on the base material and forming second cutting grooves intersecting the first cutting grooves.

The electrostatic chuck of the vacuum processing apparatus and the method of manufacturing the same according to the present invention as described above can be formed uniformly regardless of the size of the electrostatic chuck. In addition, the electrostatic chuck of the vacuum processing apparatus and the manufacturing method thereof according to the present invention can vary the shape of the protrusion to match the process characteristics, simplify the manufacturing process of the electrostatic chuck having the protrusion, and cope with the stabilization of the manufacturing process and the extra large area. It can be done easily.

Hereinafter, the electrostatic chuck of the vacuum processing apparatus and the manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

The vacuum processing apparatus according to the present invention includes a vacuum processing chamber 1 for etching or depositing a substrate 160 and a substrate 160 conveyed from a load lock chamber (not shown) into the vacuum processing chamber 1. It comprises a conveyance chamber (not shown) which conveys the 160 and conveys the board | substrate 160 vacuum-processed from the vacuum processing chamber 1. As shown in FIG.

The load lock chamber receives the substrate 160 from the outside and conveys the substrate 160 to the transfer chamber, or discharges the vacuum-treated substrate 160 from the transfer chamber to the outside.

The transfer chamber receives the substrate 160 from the load lock chamber and conveys the substrate 160 into the vacuum chamber 1 or the substrate 160 processed within the vacuum chamber 1 to the load lock chamber. Return.

The vacuum chamber 1 receives the substrate from the transfer chamber and places the substrate in the susceptor 32a for supporting the substrate, and then vacuum-processes the substrate by etching or depositing the substrate in a vacuum state using a plasma reaction or the like. Hereinafter, an embodiment of the present invention will be described for the case of using the plasma reaction.

In the vacuum processing chamber 1, a direct current (DC) power or alternating current (RF) power is applied in a reduced pressure (vacuum atmosphere) together with a processing gas for plasma reaction to etch or etch the substrate 160 through a plasma reaction. It is deposited and vacuumed.

As shown in FIG. 3, the vacuum processing chamber 1 includes an upper chamber 31 and a lower chamber 32 to form a processing space S for vacuum processing.

The upper chamber 31 is connected to the gas injection pipe 31a into which the processing gas for vacuum treatment is injected into the processing space S, and the upper electrode 31b to which power is applied is installed.

The lower chamber 32 is provided with a susceptor 32a on which the upper chamber 31 and the sealing member 33 are hermetically coupled to form a processing space S, and on which the substrate 160 to be vacuumed is mounted.

In addition, an exhaust pipe 32b connected to a vacuum pump (not shown) is connected to the lower chamber 32 so that the pressure in the processing space S maintains a predetermined vacuum atmosphere for the plasma reaction.

As shown in FIG. 3, the susceptor 33a includes a lower electrode 200 installed on the insulating member 300 at the bottom of the lower chamber 32 to cause a plasma reaction together with the upper electrode 31. The electrostatic chuck 100 is installed on the lower electrode 200 to suck and fix the substrate 160 to be vacuumed.

As shown in FIG. 4, the electrostatic chuck 100 is formed on the base material 110 having the protrusion 111, the insulating layer 120 formed on the base material 110, and the insulating layer 120. The electrostatic layer 130 generates an electrostatic force by application of a direct current power source (not shown), and the dielectric layer 140 is formed on the electrostatic layer 130 and supports the substrate 160 to be vacuumed.

The base material 110 may be configured as the lower electrode 200 itself, which is a conductive member, or may be configured as a separate member coupled to the lower electrode 200. In addition, a plurality of injection holes (not shown) for injecting helium (He) gas into the substrate 160 may be formed inside the base material 110 to uniformly distribute the temperature of the substrate 160.

The base material 110 has a plurality of protrusions 111 protruding from the upper side, and the vertical cross section of the protrusions 111 is a polygon, cone, such as a triangle, a square or a trapezoid, as shown in Figs. Various shapes, such as curved shapes, such as a shape, can be achieved.

The protrusion 111 may be formed on the base material 110 so that the surface of the dielectric layer 140 protrudes to a predetermined height after the insulating layer 120, the electrostatic layer 130, and the dielectric layer 140 are stacked on the base material 110. Protruding portion of the 140 is characterized in that it is formed to contact and support the substrate 160. In particular, the protrusion 111 may be formed such that the protruding portion of the dielectric layer 140 makes point contact with the substrate 160.

On the other hand, the protrusion 111 may be formed by various methods such as etching, thermal spraying, it is preferably formed by mechanical processing or physical processing. In particular, the protrusion 111 may be formed by a blasting process, a milling process, a shot peening process, or the like. The protrusion 111 may have a predetermined height and be formed in various patterns such as a regular pattern or an irregular pattern.

In addition, the protrusion 111 may be formed in a lattice structure by forming a plurality of cutting grooves on the base material 160 through milling, cutting, and the like, as shown in FIGS. 8A to 8C.

Meanwhile, as illustrated in FIG. 6A, the protrusion 111 may have a predetermined pattern such as a lattice structure on the base material 110. In addition, the arrangement direction of the protrusion 111 may be formed to be inclined with one side of the electrostatic chuck 100 so as not to affect the etching or deposition of the substrate 160 to be vacuumed.

As described above, when the protrusion 111 is formed on the base material 110 by machining or physical processing, the process of processing the base material 110 such as the lower electrode 200 is simultaneously performed to simplify the manufacturing process of the electrostatic chuck 100. It is possible to greatly reduce the manufacturing time of the electrostatic chuck 100, it is possible to significantly reduce the manufacturing cost of the electrostatic chuck 100.

In addition, when the protrusion 111 is formed on the base material 110 by machining or physical processing, the large area electrostatic chuck for adsorption fixing of the large area substrate 160 is not affected by the size of the electrostatic chuck 100. 100 can be easily manufactured.

On the base material 110 on which the protrusion 111 is formed, Al ₂ O ₃ , ZrO ₃ , AlN, Y ₂ O ₃ The insulating layer 120 is formed by a spray made of any one of them. In this case, an intermediate layer 121 may be further formed between the base material 110 and the insulating layer 120 to improve adhesion to the base material 110.

The intermediate layer 121 is a member for improving adhesion, and is formed on a base material by thermal spraying or the like, and may be formed of one or more of metals such as Ni, Al, Cr, Co, Mo, or alloys thereof.

The electrostatic layer 130 is formed on the insulating layer 120 to generate an electrostatic force by the application of a direct current power source. The electrostatic layer 130 is electrically connected to a DC power source to receive power. In addition, the electrostatic layer 130 may be formed by spraying on at least one selected from W, Al, Cu, Nb, Ta, Mo, Ni, and the like, and one or more alloys containing these metals.

On the electrostatic layer 130, Al ₂ O ₃ , ZrO ₃ , AlN, Y ₂ O ₃ The dielectric layer 140 is formed by a spray made of any one of the above. Here, the dielectric layer 140 is formed of a dielectric material having a predetermined dielectric constant so that electrostatic force is generated when a DC power is applied to the electrostatic layer 130 so as to adsorb and fix the substrate 160.

Meanwhile, the manufacturing method of the electrostatic chuck 100 of the vacuum processing apparatus having the structure as described above, as shown in Figure 7a to 7d, the projection forming step of forming the projection 111 on the base material 110, and the projection ( An insulating layer forming step of forming an insulating layer 120 on the base material 110 on which the 111 is formed, an electrostatic layer forming step of forming an electrostatic layer 130 on the insulating layer 120, and an electrostatic layer 130. And forming a dielectric layer 140 on the dielectric layer 140.

First, as shown in FIG. 7A, a plurality of protrusions 111 are formed on the surface of the metal base material 100 by mechanical or physical processing such as blast processing, end mill processing, shot peening, and the like.

On the other hand, the method of forming the protrusion 111 on the base material 110 can be processed by a variety of methods, as shown in Figure 8a to 8c, milling or cutting through the processing machine 40 Through the plurality of cutting grooves (111a) through the blade and seed line can be formed through the protrusions (111).

The processing machine 40 can be variously implemented and modified by those skilled in the art, and as shown in Figure 8a to 8c, a plurality of first and second incision grooves at a time It may be configured to include a plurality of cutting portions 41 to form the (111a).

That is, as shown in FIG. 8A, the plurality of first cutting grooves 111a are formed by the processing machine 40 and the first cutting grooves 111a are formed after the first cutting grooves 111a are formed. The protrusions 111 may be formed by forming the second cutouts 111a to cross each other.

After the protrusions 111 are formed on the base material 110, as shown in FIG. 7B, the insulating layer 120 is formed by spraying or the like to a predetermined thickness. In this case, before forming the insulating layer 120, an intermediate layer 121 may be formed to improve adhesion between the base material 110 and the insulating layer 120.

After the insulating layer 120 is formed, as shown in FIG. 7C, an electrostatic layer 130 of a metal material, which is a conductive material, is formed.

After the electrostatic layer 130 is formed, as shown in FIG. 7D, a dielectric layer 140 made of a dielectric material having a predetermined dielectric constant is formed.

The manufacturing method of the electrostatic chuck of the vacuum processing apparatus according to the present invention as described above by forming the protrusions at the time of processing the base material, there is no need for the additional process for forming the protrusions compared to the conventional method of forming by thermal spraying, etc. The same separate member is not necessary.

Since the electrostatic chuck of the vacuum processing apparatus according to the present invention forms a protrusion on the base material by machining or physical processing, it is possible to simplify the manufacturing process of the electrostatic chuck by simultaneously processing the base material, thereby greatly reducing the manufacturing time of the electrostatic chuck. As a result, the manufacturing cost of the electrostatic chuck can be greatly reduced.

In addition, since the electrostatic chuck of the vacuum processing apparatus according to the present invention forms a protrusion on the base material by machining or physical processing, it is not affected by the size of the electrostatic chuck, thereby easily manufacturing a large-area electrostatic chuck for adsorption fixing of a large-area substrate. You can do it.

Although the preferred embodiments of the present invention have been described above by way of example, the scope of the present invention is not limited to these specific embodiments, and may be appropriately changed within the scope described in the claims.

Claims (20)

delete delete A base material having a plurality of protrusions, an insulating layer formed on the base material, an electrostatic layer formed on the insulating layer to generate an electrostatic force by application of power, and a dielectric layer formed on the electrostatic layer, Electrostatic chuck of the vacuum processing apparatus, characterized in that the vertical section of the projection is polygonal, cone-shaped, or curved. A base material having a plurality of protrusions, an insulating layer formed on the base material, an electrostatic layer formed on the insulating layer to generate an electrostatic force by application of power, and a dielectric layer formed on the electrostatic layer, And the protrusion is formed so that the dielectric layer is in point contact with the substrate. A base material having a plurality of protrusions, an insulating layer formed on the base material, an electrostatic layer formed on the insulating layer to generate an electrostatic force by application of power, and a dielectric layer formed on the electrostatic layer, The protrusion is formed in a lattice, the arrangement direction of the electrostatic chuck of the vacuum processing apparatus, characterized in that formed inclined with one side of the electrostatic chuck. delete A base material having a plurality of protrusions, an insulating layer formed on the base material, an electrostatic layer formed on the insulating layer to generate an electrostatic force by application of power, and a dielectric layer formed on the electrostatic layer, The projection is electrostatic chuck of the vacuum processing apparatus, characterized in that formed by blast processing, milling or shot peening (Shot Peening) processing. A base material having a plurality of protrusions, an insulating layer formed on the base material, an electrostatic layer formed on the insulating layer to generate an electrostatic force by application of power, and a dielectric layer formed on the electrostatic layer, Electrostatic chuck of the vacuum processing apparatus, characterized in that the intermediate layer is further formed between the base material and the insulating layer for improving the adhesion with the base material. A base material having a plurality of protrusions, an insulating layer formed on the base material, an electrostatic layer formed on the insulating layer to generate an electrostatic force by application of power, and a dielectric layer formed on the electrostatic layer, The base material is an electrostatic chuck of a vacuum processing apparatus, characterized in that the lower electrode is connected to an external power source to cause a plasma reaction. 10. A vacuum processing apparatus comprising an electrostatic chuck according to any one of claims 3 to 5. The method of claim 10, The vacuum processing apparatus is a vacuum processing apparatus, characterized in that the plasma processing apparatus. The method of claim 10, The vacuum processing apparatus is a vacuum processing apparatus, characterized in that for etching or depositing the substrate in a vacuum state. delete A protrusion forming step of forming a plurality of protrusions on a base material, an insulating layer forming step of forming an insulating layer on the base material on which the protrusions are formed, an electrostatic layer forming step of forming an electrostatic layer on the insulating layer, and the electrostatic A dielectric layer forming step of forming a dielectric layer on the layer, In the protrusion forming step And forming the protrusions by forming a plurality of first cutouts intersecting with the first cutouts after forming a plurality of first cutouts on the base material to form the protrusions. A protrusion forming step of forming a plurality of protrusions on a base material, an insulating layer forming step of forming an insulating layer on the base material on which the protrusions are formed, an electrostatic layer forming step of forming an electrostatic layer on the insulating layer, and the electrostatic A dielectric layer forming step of forming a dielectric layer on the layer, The vertical section of the projection is a polygonal, cone-shaped, or curved shape, characterized in that the manufacturing method of the electrostatic chuck of the vacuum processing apparatus. A protrusion forming step of forming a plurality of protrusions on a base material, an insulating layer forming step of forming an insulating layer on the base material on which the protrusions are formed, an electrostatic layer forming step of forming an electrostatic layer on the insulating layer, and the electrostatic A dielectric layer forming step of forming a dielectric layer on the layer, And the protrusion is formed such that the dielectric layer is in point contact with the substrate. A protrusion forming step of forming a plurality of protrusions on a base material, an insulating layer forming step of forming an insulating layer on the base material on which the protrusions are formed, an electrostatic layer forming step of forming an electrostatic layer on the insulating layer, and the electrostatic A dielectric layer forming step of forming a dielectric layer on the layer, The protrusion is formed of a lattice, the arrangement direction of the electrostatic chuck manufacturing method of the vacuum processing apparatus, characterized in that formed inclined with one side of the electrostatic chuck. delete A protrusion forming step of forming a plurality of protrusions on a base material, an insulating layer forming step of forming an insulating layer on the base material on which the protrusions are formed, an electrostatic layer forming step of forming an electrostatic layer on the insulating layer, and the electrostatic A dielectric layer forming step of forming a dielectric layer on the layer, The projection is electrostatic chuck of the vacuum processing apparatus, characterized in that formed by blast processing, milling or shot peening (Shot Peening) processing. A protrusion forming step of forming a plurality of protrusions on a base material, an insulating layer forming step of forming an insulating layer on the base material on which the protrusions are formed, an electrostatic layer forming step of forming an electrostatic layer on the insulating layer, and the electrostatic A dielectric layer forming step of forming a dielectric layer on the layer, After the protrusion forming step further comprising the step of forming an intermediate layer for improving the adhesion between the base material and the insulating layer further comprising the step of manufacturing an electrostatic chuck of the vacuum processing apparatus.

Images