JP2006156550A - Die-bonding device - Google Patents

Die-bonding device Download PDF

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Publication number
JP2006156550A
JP2006156550A JP2004342189A JP2004342189A JP2006156550A JP 2006156550 A JP2006156550 A JP 2006156550A JP 2004342189 A JP2004342189 A JP 2004342189A JP 2004342189 A JP2004342189 A JP 2004342189A JP 2006156550 A JP2006156550 A JP 2006156550A
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gripping
die bonding
semiconductor chip
bonding apparatus
electrode
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Tamaya Ubukata
玉也 生方
Yoshiaki Yukimori
美昭 行森
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Tsukuba Seiko Ltd
Nidec Powertrain Systems Corp
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Nidec Tosok Corp
Tsukuba Seiko Ltd
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Priority to JP2004342189A priority Critical patent/JP2006156550A/en
Priority to TW094141245A priority patent/TW200620494A/en
Priority to PCT/JP2005/021671 priority patent/WO2006057335A1/en
Publication of JP2006156550A publication Critical patent/JP2006156550A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Manipulator (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a die-bonding device capable of solving the problem of a vacuum-suction-type collet by adopting an electrostatic attraction type instead of a vacuum suction type. <P>SOLUTION: The die-bonding device has a gripping device 200 for sucking and gripping an object 104 to be gripped, such as a semiconductor chip and an insulating film, by using electrostatic suction force. The gripping device 200 has an electrostatic attraction device in which an electrode is buried in an insulating material 203 for fixing. The electrode is composed of a pair of electrode elements 202a, 202b. In the pair of electrode elements 202a, 202b, the area of the electrode, where a positive voltage is applied onto one surface of a base member 204, is equal to that of the electrode, where a negative voltage is applied. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、半導体チップをダイボンディングする際のダイボンディング装置に関する。   The present invention relates to a die bonding apparatus for die bonding a semiconductor chip.

一般的に、半導体チップは、シリコンウエハーの表面に回路素子を形成し、ついで、このシリコンウエハーの裏面にウエハーシートを貼着したのち、各半導体チップ毎に分割（ダイシング）することにより製造され、この分割された半導体チップは、ウエハーシートから一つ一つ剥離され、ピックアップされて予め銀ペーストなどの接着剤が付与されたリードフレーム、テープ基板、有機質硬質基板等の実装基材上に順次ダイボンディングされて利用されている（例えば、特許文献１、２参照。）。   In general, a semiconductor chip is manufactured by forming circuit elements on the surface of a silicon wafer, and then attaching a wafer sheet to the back surface of the silicon wafer and then dividing (dicing) each semiconductor chip. The divided semiconductor chips are peeled one by one from the wafer sheet, picked up, and then sequentially die mounted on a mounting substrate such as a lead frame, a tape substrate, an organic hard substrate, etc., to which an adhesive such as silver paste has been applied. Bonded and used (for example, refer to Patent Documents 1 and 2).

また、接着剤を付与する方法では接着剤がはみ出す場合があり、このはみ出しを防止するため、絶縁性フィルムなどの接合用樹脂の両面に接着性の熱圧着フィルムを積層し、この熱圧着フィルムを所定の大きさに切断して実装基材上に供給することにより、接着剤に代えてこの熱圧着フィルムを介して半導体チップを熱圧着する方法も提案されている（例えば、特許文献３参照。）。そして、このような熱圧着フィルムを用いるダイボンディング装置においては、熱圧着フィルムの搬送と半導体チップとの搬送とを順次行う必要がある。   In addition, in the method of applying an adhesive, the adhesive sometimes protrudes, and in order to prevent the protrusion, an adhesive thermocompression film is laminated on both surfaces of a bonding resin such as an insulating film, and this thermocompression film is attached. There has also been proposed a method in which a semiconductor chip is thermocompression bonded through this thermocompression film instead of an adhesive by cutting it into a predetermined size and supplying it onto a mounting substrate (see, for example, Patent Document 3). ). And in the die bonding apparatus using such a thermocompression bonding film, it is necessary to carry out conveyance of a thermocompression bonding film and conveyance of a semiconductor chip sequentially.

また、半導体ウエハー加工時のウエハー固定機能とダイボンディング工程のダイアタッチ機能とを同時に兼ね備えたウエハー貼付用接着シートなども既に提案されており（例えば、特許文献４参照。）、このようなウエハー貼付用接着シートを用いれば、工程の簡略化が行える。   In addition, an adhesive sheet for attaching a wafer that has both a wafer fixing function at the time of processing a semiconductor wafer and a die attach function in a die bonding process has been proposed (see, for example, Patent Document 4). If the adhesive sheet is used, the process can be simplified.

さらに近年、携帯機器及びパソコン等の小型化にともない、半導体装置の実装基材への実装に際して、高密度化が要求され、スタックドパッケージ技術が注目されている（例えば、特許文献３及び特許文献５参照。）。   In recent years, with the miniaturization of portable devices and personal computers, high density is required for mounting a semiconductor device on a mounting substrate, and stacked package technology has attracted attention (for example, Patent Document 3 and Patent Document). 5).

このようなスタックドパッケージ技術では、図６に示すように、下側半導体チップ１と、上側半導体チップ２とが絶縁性フィルム状接着層３により絶縁されて厚み方向に積層されている。ここで、符号４はボンディングワイヤーであり、符号５は、配線基板である。   In such a stacked package technique, as shown in FIG. 6, the lower semiconductor chip 1 and the upper semiconductor chip 2 are insulated by the insulating film adhesive layer 3 and laminated in the thickness direction. Here, reference numeral 4 is a bonding wire, and reference numeral 5 is a wiring board.

このようなスタックドパッケージ技術では、例えば、接着性の絶縁性フィルムが搬送され、仮接着された状態で下側半導体チップ１が搬送され、ダイボンディングしてダイボンダが製造され、さらにその上に第２段の積層が行われる。この第２段の積層は、例えば、第１段と同一装置に再び投入されることにより実質的に同一工程を経て第２段の積層が行える。すなわち、ダイボンダの上のランドに接着性の絶縁性フィルムが搬送され、仮接着の後、上側半導体チップ２が搬送され、所定の温度で加熱されることによりダイボンディングが行われて２段の積層体が得られる。   In such a stacked package technology, for example, an adhesive insulating film is transported, the lower semiconductor chip 1 is transported in a temporarily bonded state, die-bonded to manufacture a die bonder, and further a first bond is formed thereon. Two layers are stacked. This second stage stacking can be performed through substantially the same process by, for example, being put back into the same apparatus as the first stage. That is, an adhesive insulating film is transported to a land on a die bonder, and after temporary bonding, the upper semiconductor chip 2 is transported and heated at a predetermined temperature to perform die bonding to perform two-layer lamination. The body is obtained.

得られた積層体は、直接又は一時的にストックされ、ダイボンディング工程の次工程としてのワイヤーボンディング工程に搬送され、ワイヤーボンディング工程では下側半導体チップ１の回路形成面上のワイヤーボンディング電極パターン及び上側半導体チップ２のワイヤーボンディング電極パターンと、実装基材の表面側配線形成面上のワイヤーボンディング電極パターンとをボンディングワイヤー４で接続することにより図６のようなスタックドパッケージが得られる。   The obtained laminate is stocked directly or temporarily, and is transported to a wire bonding step as a next step of the die bonding step. In the wire bonding step, a wire bonding electrode pattern on the circuit forming surface of the lower semiconductor chip 1 and A stacked package as shown in FIG. 6 is obtained by connecting the wire bonding electrode pattern of the upper semiconductor chip 2 and the wire bonding electrode pattern on the surface-side wiring forming surface of the mounting substrate with the bonding wires 4.

以上説明のように、ダイボンディング方法、装置には、種々な手法、装置が提案され、また、検討されているが、いずれのダイボンディング方法、装置においても、半導体チップを把持（ピックアップ）して実装装置上へ搬送する実装工程は必須の工程である。また、接着剤又は絶縁材として絶縁性フィルムを用いる場合には、半導体チップの実装工程に加えて絶縁性フィルムの実装工程が必要となる。そして、それらの半導体チップ、絶縁性フィルム（接着剤フィルムなど）などの実装には、専ら、真空吸引装置に接続されたコレット（真空吸着パッド）が吸着把持装置として用いられ、ウエハーシート上の半導体チップ又は絶縁性フィルム（接着剤フィルムなど）の一枚、一枚が吸着されて実装基材上へ搬送されて実装されている。   As described above, various methods and apparatuses have been proposed and studied for die bonding methods and apparatuses. In any die bonding method and apparatus, a semiconductor chip is held (pickup). The mounting process of transporting onto the mounting apparatus is an essential process. In addition, when an insulating film is used as an adhesive or an insulating material, an insulating film mounting step is required in addition to a semiconductor chip mounting step. And for mounting such semiconductor chips, insulating films (adhesive films, etc.), a collet (vacuum suction pad) connected exclusively to a vacuum suction device is used as a suction gripping device, and the semiconductor on the wafer sheet One or one chip or insulating film (such as an adhesive film) is adsorbed and conveyed onto a mounting substrate for mounting.

そして、このような搬送装置の先端に装着されるコレットは、その先端６ａに吸引口６ｂに連通する凹部６ｃを備えた角錐コレット６（図３参照）、及び、その先端面７ａがフラットに形成され、そのフラットな先端面７ａの中央部に吸引口７ｂを開口しフラットコレット７（図４又は図５参照）、その他の種々の形状のコレットなど、が知られている。
特開平９−２８９２１９号（第２頁及び図１、図２） 特開平８−１８６１３２号（第２頁及び図１、図３） 特開２００４−６５９９号公報（第３頁、第５頁〜第１０頁及び図１、図３） 特開２００２−２９４１７７号公報（第２頁） 特開２００４−７２００９号公報（第３頁及び図８〜図１０） The collet attached to the tip of such a transport device has a pyramid collet 6 (see FIG. 3) having a recess 6c communicating with the suction port 6b at the tip 6a, and a tip surface 7a formed flat. In addition, a flat collet 7 (see FIG. 4 or FIG. 5) having a suction port 7b opened at the center of the flat front end surface 7a, and other various shapes of collets are known.
Japanese Patent Application Laid-Open No. 9-289219 (second page and FIGS. 1 and 2) JP-A-8-186132 (second page and FIGS. 1 and 3) JP 2004-6599 A (page 3, page 5 to page 10 and FIGS. 1 and 3) JP 2002-294177 A (second page) JP 2004-72009 A (page 3 and FIGS. 8 to 10)

しかしながら、角錐コレット６は素材が一般に金属により形成され比較的高価である。また、把持対象物としての半導体チップ８は凹部６ｃ内に保持されることになるので、半導体チップ８の大きさに応じた専用コレットが必要となり、チップ仕様の変更の都度コレットを取り替える必要が生じるという課題がある。また、半導体チップ８は、凹部６ｃ内の傾斜面６ｄに保持されることになるので、１００μｍ程度以下の薄型の半導体チップ８では、半導体チップ８の端部８ａに生じる集中応力により、半導体チップ８にクラックが発生する場合があり、歩留まりが低下するという課題が生じる。   However, the pyramid collet 6 is made of a metal and is relatively expensive. Further, since the semiconductor chip 8 as a gripping object is held in the recess 6c, a dedicated collet corresponding to the size of the semiconductor chip 8 is required, and the collet needs to be replaced whenever the chip specification is changed. There is a problem. Further, since the semiconductor chip 8 is held on the inclined surface 6d in the recess 6c, in the thin semiconductor chip 8 of about 100 μm or less, the semiconductor chip 8 is caused by the concentrated stress generated in the end 8a of the semiconductor chip 8. In some cases, cracks may occur, resulting in a decrease in yield.

一方、フラットコレット７では、図５に示すように、厚みが２０〜５０μｍ程度と極めて薄い絶縁性フィルム９を吸着する場合には、吸引口７ｂ付近の絶縁性フィルム９の中央部に吸引口７ｂに向けた窪み９ａが発生し、この窪み９ａが解消されないままで熱融着されると、この窪み９ａが起因して積層体中でのボイド（気泡）の発生に繋がる場合があるという課題が生じている。   On the other hand, in the flat collet 7, as shown in FIG. 5, when an extremely thin insulating film 9 having a thickness of about 20 to 50 μm is adsorbed, the suction port 7b is formed at the central portion of the insulating film 9 near the suction port 7b. When the dent 9a toward the surface is generated and the dent 9a is heat-sealed without being eliminated, the dent 9a may cause voids (bubbles) in the laminated body. Has occurred.

特許文献３では、このボイドの発生をコレットの形状により解決しようとしているが、吸引口の位置によっては、凹部６ｃを有する角錐コレットと同様な絶縁性フィルムの大きさが制限されることになるという課題が発生し、フラットコレットの特性が損なわれる場合がある。   In Patent Document 3, an attempt is made to solve the generation of the void by the shape of the collet. However, depending on the position of the suction port, the size of the insulating film similar to that of the pyramid collet having the recess 6c is limited. A problem may occur and the characteristics of the flat collet may be impaired.

そこで、本発明の課題は、このような真空吸着式のコレットの課題を解決できるダイボンディング装置を提供することを目的とする。   Then, the subject of this invention aims at providing the die bonding apparatus which can solve the subject of such a vacuum suction type collet.

そして、本発明の第１の目的は、把持対象物の大きさが変更になった場合にも対応できる把持装置を備えたダイボンディング装置を提供することである。   A first object of the present invention is to provide a die bonding apparatus provided with a gripping device that can cope with a case where the size of a gripping object is changed.

また、本発明の第２の目的は、把持対象物を破損することなく搬送できる把持装置を備えたダイボンディング装置を提供することである。   In addition, a second object of the present invention is to provide a die bonding apparatus provided with a gripping device that can transport a gripping object without damaging it.

また、本発明の第３の目的は、把持対象物がフィルム素材などの柔軟な材料の場合においても、ボイドを発生させることの少ない、把持装置を備えたダイボンディング装置を提供することである。   A third object of the present invention is to provide a die bonding apparatus provided with a gripping device that hardly generates voids even when the gripping target is a flexible material such as a film material.

本発明は、静電吸着力を用いて半導体チップ又は絶縁フィルムを吸着把持する把持装置を備えたダイボンディング装置である。   The present invention is a die bonding apparatus including a gripping device that chucks and grips a semiconductor chip or an insulating film by using an electrostatic suction force.

本発明に従えば、クーロン力による吸着方式により、吸着プレートの全面で吸着することにより、真空吸着によるコレットに比べて凹部が不要であるので、把持対象物の大きさが変更になった場合にも対応できる把持装置を備えたダイボンディング装置を提供することができる。   According to the present invention, when the size of the object to be grasped is changed by the adsorption method based on the Coulomb force, the concave portion is not required as compared with the collet by vacuum adsorption by adsorbing on the entire surface of the adsorption plate. Therefore, it is possible to provide a die bonding apparatus including a gripping apparatus that can cope with the above.

また、本発明に従えば、クーロン力による吸着方式により、吸着プレートの全面で吸着することにより、真空吸着によるコレットに比べて凹部が不要であるので、把持対象物を破損することなく搬送できる把持装置を備えたダイボンディング装置を提供することができる。   In addition, according to the present invention, a suction method using a Coulomb force attracts the entire surface of the suction plate, so that there is no need for a concave portion compared to a collet by vacuum suction. A die bonding apparatus including the apparatus can be provided.

また、本発明に従えば、クーロン力による吸着方式により、吸着プレートの全面で吸着することにより、真空吸着方式による吸引口が不要であるので、把持対象物がフィルム素材などの柔軟な材料の場合においても、窪み９ａを発生させることなく把持できる。これにより、ボイドを発生させることの少ない、把持装置を備えたダイボンディング装置を提供することができる。   In addition, according to the present invention, the suction target by the vacuum suction method is unnecessary by suctioning the entire surface of the suction plate by the suction method by the Coulomb force, so that the object to be gripped is a flexible material such as a film material. In this case, it is possible to grip without generating the recess 9a. Thereby, it is possible to provide a die bonding apparatus provided with a gripping apparatus that hardly generates voids.

また、本発明は、絶縁フィルムを吸着把持する第１の把持装置及び半導体チップを吸着把持する第２の把持装置が連続した一つのダイボンディング装置に組み込まれ、搬送される実装基材に対して第１の把持装置が第２の把持装置の上流側に配設されていることを特徴とするダイボンディング装置である。   In addition, the present invention provides a first holding device for sucking and holding an insulating film and a second holding device for sucking and holding a semiconductor chip in a continuous die bonding apparatus and is mounted on a transported mounting substrate. The die bonding apparatus is characterized in that the first gripping device is disposed upstream of the second gripping device.

このようなダイボンディング装置によれば、搬送される実装基材に対して第１の把持装置により絶縁フィルムを実装後に第２の把持装置により半導体チップを実装する工程を順位行うことにより、フィルム状の接着剤を用いたり、半導体チップの２又はそれ以上が絶縁材料により隔離されて積層されたダイボンダを製造できるダイボンディング装置を提供することができる。   According to such a die bonding apparatus, the process of mounting the semiconductor chip by the second gripping device is performed after the insulating film is mounted by the first gripping device on the transported mounting substrate, thereby forming a film shape. Thus, it is possible to provide a die bonding apparatus that can manufacture a die bonder in which two or more semiconductor chips are separated by an insulating material and stacked.

また、本発明は、上述の把持装置において、少なくとも一つの把持装置は、正の電圧が印加される電極面積と負の電圧が印加される電極面積とが等しい一対の電極要素から構成された電極が絶縁材料に埋設されて固定されている静電吸着装置を有していることを特徴とするダイボンディング装置である。   Further, the present invention is the above gripping device, wherein at least one gripping device is composed of a pair of electrode elements in which an electrode area to which a positive voltage is applied and an electrode area to which a negative voltage is applied are equal. Is a die bonding apparatus characterized by having an electrostatic chucking device embedded and fixed in an insulating material.

このように構成すれば、静電吸引力により把持対象物が把持されるが、その把持装置は、正の電圧が印加される電極面積と負の電圧が印加される電極面積とが等しい一対の電極要素から構成された電極が絶縁材料に埋設されて固定されているので、把持対象物が帯電することがない。   With this configuration, the object to be grasped is grasped by electrostatic attraction force, and the grasping device has a pair of electrode areas to which a positive voltage is applied and an electrode area to which a negative voltage is applied. Since the electrode composed of the electrode elements is embedded and fixed in the insulating material, the object to be grasped is not charged.

また、本発明の把持装置において、半導体チップ又は絶縁フィルムを静電吸着力により吸着して把持する保持面は絶縁材料からなる平面形状であることが好ましい。   In the gripping device of the present invention, it is preferable that the holding surface that grips and grips the semiconductor chip or the insulating film by electrostatic attraction force has a planar shape made of an insulating material.

このように保持面が平面であれば、把持対象物の大きさが変更になった場合にも対応でき、また、把持対象物を破損することなく搬送できる。さらに、把持対象物が薄いフィルムのような場合にも、窪み９ａなどの癖をフィルムに与えることなく搬送でき、ボイドの発生を抑制できる。   As described above, if the holding surface is flat, it is possible to cope with a case where the size of the gripping object is changed, and the gripping object can be transported without being damaged. Furthermore, even when the object to be grasped is a thin film, it can be conveyed without giving wrinkles such as depressions 9a to the film, and the generation of voids can be suppressed.

本発明によれば、真空吸着式に代えて静電吸着式を採用することにより真空吸着式のコレットの課題を解決できるダイボンディング装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, it replaces with a vacuum suction type and can provide the die bonding apparatus which can solve the subject of a vacuum suction type collet by employ | adopting an electrostatic suction type.

以下に本発明の実施の形態に係るダイボンディング装置及びその動作の一例につき図面に基づき説明する。
［実施例１］
まず、図２は、本発明に係るダイボンディング装置及びその動作の一例を説明する図である。この図において、符号１００は、ダイボンディング装置であり、このダイボンディング装置１００は、半導体チップ等の把持対象物１０４を供給する供給台１０３と、リードフレーム、テープ基板、有機質硬質基板など実装基材１０５を供給する基材供給装置１０８と、供給台１０３上の把持対象物１０４を把持して実装基材１０５へ搬送する搬送装置（把持装置）２００とから大略構成されている。 An example of a die bonding apparatus and its operation according to an embodiment of the present invention will be described below with reference to the drawings.
[Example 1]
First, FIG. 2 is a diagram for explaining an example of the die bonding apparatus and its operation according to the present invention. In this figure, reference numeral 100 denotes a die bonding apparatus. The die bonding apparatus 100 includes a supply base 103 for supplying a gripping object 104 such as a semiconductor chip, and a mounting base material such as a lead frame, a tape substrate, and an organic hard substrate. A substrate supply device 108 for supplying 105 and a transfer device (gripping device) 200 for holding the gripping object 104 on the supply base 103 and transporting it to the mounting substrate 105 are roughly configured.

この供給台１０３は、この実施例では、不図示のＸＹテーブルにより平面方向であるｘｙ方向に移動し、供給台１０３の上には、ウエハーシート１０２に貼着され、チップ状に切断された把持対象物１０４としての半導体チップが配置されている。   In this embodiment, the supply table 103 is moved in the xy direction, which is a planar direction, by an XY table (not shown), and is gripped on the supply table 103 by being attached to the wafer sheet 102 and cut into chips. A semiconductor chip as the object 104 is arranged.

また、基材供給装置１０８としては、進行方向であるｘ方向に移動するコンベアー又は搬送レールが採用され、この基材供給装置（コンベアー）１０８には、実装基材１０５の一例としてのリードフレームが載置されている。そして、この実施例では、実装基材（リードフレーム）１０５の上面（台）１０７の装着箇所（ランド）に接着剤１０６が予め付与されている。この接着剤１０６は、例えば、供給台１０３の上流側に配設された接着剤付与装置（不図示）等により付与された銀ペーストなどの接着剤である。   Further, as the substrate supply device 108, a conveyor or a transport rail that moves in the x direction, which is the advancing direction, is adopted. In this substrate supply device (conveyor) 108, a lead frame as an example of the mounting substrate 105 is provided. It is placed. In this embodiment, an adhesive 106 is applied in advance to a mounting location (land) of the upper surface (base) 107 of the mounting substrate (lead frame) 105. The adhesive 106 is, for example, an adhesive such as a silver paste applied by an adhesive application device (not shown) or the like disposed on the upstream side of the supply table 103.

搬送装置２００は、供給台１０３より供給される把持対象物１０４を実装基材１０５へ実装するために搬送する装置であり、先端に静電気力により把持対象物１０４を保持できる静電吸着力を有する静電チャックが用いられている。この静電チャックは、不図示の移動機構に接続され、横方向であるｙ方向に移動され、供給台１０３と基材供給装置１０８との上方を往復しつつ、昇降方向であるｚ方向に移動可能に構成され、供給台１０３で把持対象物としての半導体チップ１０４を静電吸引力により吸着し、接着剤１０６上で把持対象物１０４を離脱させることにより把持対象物１０４を実装基材１０５に実装させている。   The transport device 200 is a device that transports the gripping object 104 supplied from the supply base 103 to mount it on the mounting substrate 105, and has an electrostatic attraction force that can hold the gripping object 104 at the tip by electrostatic force. An electrostatic chuck is used. This electrostatic chuck is connected to a moving mechanism (not shown), moved in the y direction, which is a horizontal direction, and moves in the z direction, which is an ascending / descending direction, while reciprocating between the supply table 103 and the substrate supply device 108. The semiconductor chip 104 as a gripping object is adsorbed by an electrostatic attraction force on the supply base 103, and the gripping object 104 is detached on the adhesive 106, whereby the gripping object 104 is attached to the mounting substrate 105. It is implemented.

この搬送装置（把持装置）２００の要部の詳細の一例は、図１に示されている。この図１に示すように、この搬送装置２００は、ベース部材２０４の一面に絶縁材料２０３により埋設された互いの面積が等しい一対の電極要素２０２ａ，２０２ｂから構成された電極２０２が固定されている。これらの一対の電極要素２０２ａ，２０２ｂは、互いに交互に隣接してその表面が平面を形成するように配設されている。   An example of the details of the main part of the conveying device (gripping device) 200 is shown in FIG. As shown in FIG. 1, in the transfer device 200, an electrode 202 composed of a pair of electrode elements 202 a and 202 b having an equal area embedded in one surface of a base member 204 is fixed. . The pair of electrode elements 202a and 202b are arranged so that the surfaces thereof are alternately adjacent to each other and form a plane.

各電極要素２０２ａ、２０２ｂはそれぞれ電圧制御部２０５に接続固定されている。この電圧制御部２０５から電極要素２０２ａ，２０２ｂには、互いに極性の異なる電圧が印加され、また、切断時にはそれぞれの電極要素２０２ａ，２０２ｂがそれぞれ接地されるようになっている。   The electrode elements 202a and 202b are connected and fixed to the voltage control unit 205, respectively. Voltages having different polarities are applied from the voltage control unit 205 to the electrode elements 202a and 202b, and the electrode elements 202a and 202b are grounded when disconnected.

これにより、電極要素２０２ａに＋Ｖボルトを印加し、電極要素２０２ｂに−Ｖボルトを印加させることにより、電極（電極要素２０２ａ，２０２ｂ）と把持対象物１０４との間に形成される電界を利用して、把持対象物１０４を絶縁材料２０３の表面に静電吸引力を利用して把持する。ここで、絶縁材料の下表面は把持対象物１０４を吸着して保持する面となるので、保持面２０１と呼称する。そして、この実施例では、保持面２０１は絶縁材料からなる実質的な平面とされている。なお、ここで、実質的な平面とは、静電吸着力に実質的に影響しない微細な凹凸などが付与された平面を包含している。   Thereby, by applying + V volt to the electrode element 202a and applying −V volt to the electrode element 202b, an electric field formed between the electrodes (electrode elements 202a and 202b) and the grasped object 104 is used. Thus, the object to be grasped 104 is grasped on the surface of the insulating material 203 by using electrostatic attraction force. Here, since the lower surface of the insulating material is a surface that sucks and holds the object 104 to be grasped, it is referred to as a holding surface 201. In this embodiment, the holding surface 201 is a substantially flat surface made of an insulating material. Here, the substantial plane includes a plane provided with fine irregularities that do not substantially affect the electrostatic attraction force.

このような構成によれば、把持対象物１０４を把持した状態では、保持面２０１は面吸着であるので、把持対象物１０４の大きさが変化した場合にも対応可能である。   According to such a configuration, since the holding surface 201 is surface suction in the state where the gripping target object 104 is gripped, it is possible to cope with a case where the size of the gripping target object 104 changes.

さらに保持面２０１は把持対象物１０４の表面に向けて均一な静電吸引力を作用させているので、局所的な応力の発生がなく、把持対象物１０４が薄型の半導体チップであってもクラックを発生させることがない。   Further, since the holding surface 201 applies a uniform electrostatic attraction force toward the surface of the object to be grasped 104, no local stress is generated, and even if the object to be grasped 104 is a thin semiconductor chip, a crack is generated. Is not generated.

また、電極要素２０２ａ、２０２ｂの面積が等しいので、把持対象物１０４が帯電することがない。   Further, since the electrode elements 202a and 202b have the same area, the gripping object 104 is not charged.

一つの実験によれば、図３に示す、真空吸着による角錘コレットを用いる場合の半導体チップのクラックの発生率は約５％であるが、静電チャックを用いた本発明の装置によれば、このクラックは、実質的に０％まで低減できる。
［実施例２］
この実施例は、実施例１の接着剤１０６としてフィルム状の接着剤を用いる一例を説明することにより、本発明の静電吸着システムを用いた搬送装置を備えたダイボンディング装置の優位性を説明するためのものである。 According to one experiment, when the pyramid collet by vacuum suction shown in FIG. 3 is used, the crack generation rate of the semiconductor chip is about 5%, but according to the apparatus of the present invention using an electrostatic chuck, This crack can be reduced to substantially 0%.
[Example 2]
In this embodiment, an example of using a film-like adhesive as the adhesive 106 of Embodiment 1 will be described to explain the superiority of a die bonding apparatus provided with a transfer device using the electrostatic adsorption system of the present invention. Is to do.

この実施例では、実施例１にかかる供給台１０３の上流側に厚み２０μｍ程度の絶縁フィルム（ポリイミドテープ）供給部が配設され、この絶縁フィルム供給部と実装基材供給装置１０８との間を上述の搬送装置２００と実質的に同一の機能を有する絶縁フィルム搬送装置が配設されている。   In this embodiment, an insulating film (polyimide tape) supply section having a thickness of about 20 μm is disposed on the upstream side of the supply base 103 according to the first embodiment, and a gap between the insulating film supply section and the mounting substrate supply apparatus 108 is provided. An insulating film transport device having substantially the same function as the transport device 200 described above is provided.

この絶縁フィルム供給部は、予め所定の寸法にカットした絶縁フィルムを収納したマガジン、または、テープ状の絶縁フィルムをカッターなどによりその都度カットして絶縁フィルム搬送装置に供給するものである。   This insulating film supply unit cuts a tape-shaped insulating film each time with a cutter or the like in which an insulating film cut in advance into a predetermined size is supplied by a cutter or the like and supplies it to the insulating film transport device.

このようなダイボンディング装置によれば、絶縁フィルム供給部から絶縁フィルムの供給を受けて、絶縁フィルム搬送装置を用いて装着箇所（ランド）に装着する。常法に従って、仮接着、本接着などの工程を通過して絶縁フィルムを固定した後、プレヒートを行って図２に示すダイボンディング装置に流す。   According to such a die bonding apparatus, the insulating film is supplied from the insulating film supply unit, and is mounted on the mounting location (land) using the insulating film transport apparatus. According to a conventional method, after passing through steps such as temporary bonding and main bonding, the insulating film is fixed, and then preheating is performed to flow through the die bonding apparatus shown in FIG.

例えば、特開２００４−６５９９号公報の図１に記載のダイボンディング装置と実質的に均等な機能を備えたダイボンディング装置を用い、コレットの形状を図５に示す吸引口７ｂのあるフラットコレットを用いた場合では、２０μｍ程度の薄いポリイミドテープを用いる場合のボイド率は２０％程度であったところ、静電チャックを用いた本発明の装置によれば、ボイド率は５％まで低減された。   For example, using a die bonding apparatus having substantially the same function as the die bonding apparatus described in FIG. 1 of Japanese Patent Application Laid-Open No. 2004-6599, a flat collet having a suction port 7b shown in FIG. When used, the void ratio when using a thin polyimide tape of about 20 μm was about 20%, but according to the apparatus of the present invention using an electrostatic chuck, the void ratio was reduced to 5%.

以上、この発明の実施の形態を図面により詳述してきたが、具体的な構成はこの実施の形態に限らず、この発明の要旨を逸脱しない範囲の設計の変更等があってもこの発明に含まれる。   The embodiment of the present invention has been described in detail with reference to the drawings. However, the specific configuration is not limited to this embodiment, and the present invention can be changed even if there is a design change or the like without departing from the gist of the present invention. included.

例えば、以上の実施例では、実装基材１０５としては、リードフレームが用いられていたが、テープ基板、有機質硬質基板などのその他の実装基材であっても同一の作用効果を奏することはいうまでもない。   For example, in the above embodiment, a lead frame is used as the mounting base material 105. However, other mounting base materials such as a tape substrate and an organic hard substrate have the same effects. Not too long.

また、以上の実施例では、把持対象物１０４としては、半導体チップ及び絶縁フィルムを一例として説明したが、ダイボンディング装置に用いられる把持対象物であれば本発明はこれらに限定されない。たとえば、半導体チップの裏面に絶縁フィルムを予め仮固定したものであってもよい。このような半導体チップを用いれば、スタックドパッケージのような高さ方向に積層する場合の工程の簡略化が行える。   Moreover, in the above Example, although the semiconductor chip and the insulating film were demonstrated as an example as the holding | grip target object 104, this invention will not be limited to these as long as it is a holding | grip target object used for a die bonding apparatus. For example, an insulating film may be temporarily fixed on the back surface of the semiconductor chip in advance. If such a semiconductor chip is used, the process for stacking in the height direction as in a stacked package can be simplified.

また、以上の実施例では、搬送装置２００が横方向及び昇降方向に移動可能であったが、これらの動きは、実装基材及び把持対象物の配設位置及びそれらの供給装置の動きなどにより適宜に変更してもよい。   In the above embodiment, the transport device 200 can move in the horizontal direction and the up-and-down direction. However, these movements depend on the mounting position of the mounting base material and the gripping object, the movement of the supply devices, and the like. You may change suitably.

産業上の利用の可能性Industrial applicability

以上のようなダイボンディング装置は、把持対象物１０４として壊れやすい薄い材料のみならず、フィルムのような柔らかい材料など実装基材に対して実装可能であるので、一般的なダイボンディング装置のみならず、絶縁性フィルムと半導体チップとを交互に積層することにより、集積度を上げた、各種のメモリー、スタックドパッケージなどの各種の実装品の製造に利用可能である。   The die bonding apparatus as described above can be mounted on a mounting substrate such as a soft material such as a film as well as a thin material that is fragile as the gripping object 104. In addition, by alternately laminating insulating films and semiconductor chips, the present invention can be used for manufacturing various mounting products such as various memories and stacked packages with a higher degree of integration.

本発明の実施例に係る把持装置（搬送装置の先端部）の一例を断面により説明する図である。It is a figure explaining an example of a grasping device (tip part of a conveyance device) concerning an example of the present invention by a section. ダイボンディング装置内における搬送装置の役割を説明する図である。It is a figure explaining the role of the conveying apparatus in a die-bonding apparatus. 従来の角錐コレットにより半導体チップを把持する状況を説明する断面図である。It is sectional drawing explaining the condition which hold | grips a semiconductor chip with the conventional pyramid collet. 従来のフラットコレットにより半導体チップを把持する状況を説明する断面図である。It is sectional drawing explaining the condition which hold | grips a semiconductor chip with the conventional flat collet. 従来のフラットコレットにより絶縁性フィルムを把持する状況を説明する断面図である。It is sectional drawing explaining the condition which hold | grips an insulating film with the conventional flat collet. 一般的なスタックドパッケージの一例を説明する断面図である。It is sectional drawing explaining an example of a general stacked package.

符号の説明Explanation of symbols

１：下側半導体チップ
２：上型半導体チップ
３：絶縁性フィルム状接着剤
４：ボンディングワイヤー
５：配線基板
６；角錐コレット
６ａ：先端
６ｂ：吸引口
６ｃ：凹部
６ｄ：傾斜面
７：フラットコレット
７ａ：先端面
７ｂ：吸引口
８：半導体チップ
９：絶縁性フィルム
９ａ：窪み
１００：ダイボンディング装置
１０２：ウエハーシート
１０３：供給台
１０４：把持対象物（半導体チップ、絶縁フィルムなど）
１０５：実装基材（リードフレーム、テープ基板、有機質硬質基板など）
１０６：接着剤
１０７：上面
１０８：基材供給装置（コンベア）
２００：搬送装置（把持装置）
２０１：保持面
２０２ａ（２０２）：電極要素（電極）
２０２ｂ（２０２）：電極要素（電極）
２０３：絶縁材料
２０４：ベース部材
２０５：電圧制御部 1: Lower semiconductor chip 2: Upper semiconductor chip 3: Insulating film adhesive 4: Bonding wire 5: Wiring substrate 6; Pyramid collet 6a: Tip 6b: Suction port 6c: Recess 6d: Inclined surface 7: Flat collet 7a: Front end surface 7b: Suction port 8: Semiconductor chip 9: Insulating film 9a: Depression 100: Die bonding apparatus 102: Wafer sheet 103: Supply table 104: Object to be grasped (semiconductor chip, insulating film, etc.)
105: Mounting substrate (lead frame, tape substrate, organic hard substrate, etc.)
106: Adhesive 107: Upper surface 108: Substrate supply device (conveyor)
200: Conveying device (gripping device)
201: holding surface 202a (202): electrode element (electrode)
202b (202): Electrode element (electrode)
203: Insulating material 204: Base member 205: Voltage controller

Claims (5)

静電吸着力を用いて半導体チップを吸着把持する把持装置を備えたダイボンディング装置。   A die bonding apparatus provided with a gripping device that chucks and grips a semiconductor chip by using an electrostatic suction force. 静電吸着力を用いて絶縁フィルムを吸着把持する把持装置を備えたダイボンディング装置。   A die bonding apparatus provided with a gripping device for attracting and gripping an insulating film by using an electrostatic attraction force. 絶縁フィルムを吸着把持する第１の把持装置及び半導体チップを吸着把持する第２の把持装置が連続した一つのダイボンディング装置に組み込まれ、搬送される実装基材に対して第１の把持装置が第２の把持装置の上流側に配設されていることを特徴とするダイボンディング装置。   A first gripping device for sucking and gripping an insulating film and a second gripping device for sucking and gripping a semiconductor chip are incorporated in one continuous die bonding apparatus, and the first gripping device is mounted on a transported mounting substrate. A die bonding apparatus, wherein the die bonding apparatus is disposed upstream of a second gripping apparatus. 請求項１乃至３のいずれかに記載の把持装置において、少なくとも一つの把持装置は、正の電圧が印加される電極面積と負の電圧が印加される電極面積とが等しい一対の電極要素から構成された電極が絶縁材料に埋設されて固定されている静電吸着装置を有していることを特徴とするダイボンディング装置。   4. The gripping device according to claim 1, wherein at least one gripping device includes a pair of electrode elements in which an electrode area to which a positive voltage is applied and an electrode area to which a negative voltage is applied are equal. A die bonding apparatus, comprising: an electrostatic adsorption device in which the formed electrode is embedded and fixed in an insulating material. 前記把持装置において、半導体チップ又は絶縁フィルムを静電吸着力により吸着して把持する保持面は絶縁材料からなる平面形状であることを特徴とする請求項４記載のダイボンディング装置。   5. The die bonding apparatus according to claim 4, wherein in the holding apparatus, the holding surface for holding and holding the semiconductor chip or the insulating film by electrostatic attraction has a planar shape made of an insulating material.
JP2004342189A 2004-11-26 2004-11-26 Die-bonding device Pending JP2006156550A (en)

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TW094141245A TW200620494A (en) 2004-11-26 2005-11-24 Die bonding device
PCT/JP2005/021671 WO2006057335A1 (en) 2004-11-26 2005-11-25 Die bonding equipment

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JP2018064018A (en) * 2016-10-12 2018-04-19 株式会社昭和真空 Method and device for manufacturing electronic part
JP2018120746A (en) * 2017-01-25 2018-08-02 株式会社日本マイクロニクス Chuck device and chuck method
JP2019136849A (en) * 2018-02-15 2019-08-22 株式会社ディスコ Processing method of workpiece
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JP2002299384A (en) * 2001-04-04 2002-10-11 Toray Eng Co Ltd Method and apparatus for bonding chip
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JP2003285289A (en) * 2002-03-27 2003-10-07 Tsukuba Seiko Co Ltd Handling device, conveyer and handling method

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KR101220920B1 (en) * 2010-12-23 2013-02-08 (주)아폴로테크 Wire bonding apparatus and method
JP2018064018A (en) * 2016-10-12 2018-04-19 株式会社昭和真空 Method and device for manufacturing electronic part
JP2018120746A (en) * 2017-01-25 2018-08-02 株式会社日本マイクロニクス Chuck device and chuck method
WO2018139071A1 (en) * 2017-01-25 2018-08-02 株式会社日本マイクロニクス Chuck device and chuck method
JP2019136849A (en) * 2018-02-15 2019-08-22 株式会社ディスコ Processing method of workpiece
JP7015707B2 (en) 2018-02-15 2022-02-03 株式会社ディスコ Processing method of work piece
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US12014941B2 (en) 2018-10-18 2024-06-18 Osram Opto Semiconductors Gmbh Method for transferring missing semiconductor chips using an adhesive stamp
WO2021049342A1 (en) 2019-09-11 2021-03-18 株式会社クリエイティブテクノロジー Attachment/detachment device
KR20220020366A (en) 2019-09-11 2022-02-18 가부시키가이샤 크리에이티브 테크놀러지 detachment device
US11911863B2 (en) 2019-09-11 2024-02-27 Creative Technology Corporation Attachment and detachment device

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