JP2018064018A

JP2018064018A - Method and device for manufacturing electronic part

Info

Publication number: JP2018064018A
Application number: JP2016200966A
Authority: JP
Inventors: 塩野　忠久; Tadahisa Shiono; 忠久塩野; 広宣森; Hironobu Mori; 範佳松岡; Noriyoshi Matsuoka
Original assignee: Showa Shinku Co Ltd
Current assignee: Showa Shinku Co Ltd
Priority date: 2016-10-12
Filing date: 2016-10-12
Publication date: 2018-04-19
Anticipated expiration: 2036-10-12
Also published as: JP6824520B2

Abstract

PROBLEM TO BE SOLVED: To manufacture a vacuum lock type electronic part by performing processing to at least one of an electronic circuit element, an element container, and a lid under a vacuum atmosphere and then attaching, under a vacuum atmosphere, the lid to the element container that receives the electronic circuit element therein.SOLUTION: An electronic part component of at least one of an electronic circuit element, an element container, and a lid is electrostatically attracted by bringing an electrostatic attraction electrode close to a conductive portion of the electronic part component while a conductor portion of the electrode does not come into contact with the conductive portion and applying a voltage to the electrostatic attraction electrode.SELECTED DRAWING: Figure 4

Description

本発明は、電子部品の製造方法および装置に関する。本発明は、特に水晶振動子の製造工程での利用に適するが、水晶振動子以外の電子部品の製造にも同様に利用できる。以下では、電子部品として、主に水晶振動子を例に説明する。 The present invention relates to an electronic component manufacturing method and apparatus. The present invention is particularly suitable for use in the manufacturing process of a crystal resonator, but can be used in the same manner for manufacturing electronic components other than the crystal resonator. Hereinafter, a description will be given mainly using a crystal resonator as an example of the electronic component.

水晶振動子を有する素子の製造工程には、電極が設けられた水晶片を水晶振動子容器内に固定した後に周波数を最終調整する工程（以下、「周波数調整工程」という）と、この工程の後に、真空あるいは窒素雰囲気下でリッド（蓋）を取り付けて封止する工程（以下、「封止工程」という）が含まれる。周波数調整工程の作業サイトから封止工程の作業サイトへの水晶振動子容器の移載には、一般に、真空チャックが用いられる（例えば、特許文献１参照）。なお、通常、「水晶振動子」とは、電極が設けられた水晶片が容器内に封入されたものをいうが、以下では、説明のため、水晶片が容器内に固定されてはいるがまだ封止されていない状態のものも水晶振動子という。 The manufacturing process of the element having a crystal resonator includes a step of final adjustment of the frequency after fixing the crystal piece provided with the electrode in the crystal resonator container (hereinafter referred to as “frequency adjustment step”), Thereafter, a step of attaching and sealing a lid (lid) in a vacuum or a nitrogen atmosphere (hereinafter referred to as “sealing step”) is included. In general, a vacuum chuck is used to transfer the crystal unit container from the work site of the frequency adjustment process to the work site of the sealing process (see, for example, Patent Document 1). In general, the term “quartz crystal resonator” refers to a crystal piece provided with electrodes enclosed in a container, but for the sake of explanation, the crystal piece is fixed in the container. Those that are not sealed yet are also called crystal resonators.

特開２００１−１７９６７０号公報JP 2001-179670 A

周波数調整工程と封止工程とは各々別装置で実施されるものであり、さらに、周波数調整工程では水晶振動子容器内部を露出して処理を施すのに対し、封止工程では水晶振動子容器を蓋で覆った状態で搬入する必要があるため、処理トレーを共通化することが難しく、工程間における大気中での移載工程を避けることができなかった。周波数調整工程を終了した水晶振動子容器は大気中に搬出され、大気下の移載ロボットまたは作業員により封止用トレーに移載された後、封止装置に搬入されていた。周波数調整工程終了後に水晶振動子が大気に曝されてしまうため、水分吸着やパーティクルの付着、電極の酸化を防止することができず、周波数ばらつき、良品率の低下、歩留まりの低下等の課題が生じていた。 The frequency adjustment process and the sealing process are each performed by separate devices. Furthermore, in the frequency adjustment process, the inside of the crystal unit container is exposed and processed, whereas in the sealing process, the crystal unit container Since it is necessary to carry in with the cover covered with a lid, it is difficult to share a processing tray, and the transfer process in the atmosphere between processes cannot be avoided. The crystal resonator container that has finished the frequency adjustment process was carried out to the atmosphere, and transferred to a sealing tray by a transfer robot or a worker under the atmosphere, and then transferred to a sealing device. Since the crystal unit is exposed to the atmosphere after the frequency adjustment process is completed, moisture adsorption, particle adhesion, and electrode oxidation cannot be prevented, resulting in problems such as frequency variation, lower yield rate, and lower yield. It was happening.

そこで、周波数調整工程と封止工程とを、真空雰囲気下で連続して行ことが考えられている。この場合、少なくとも容器かリッドのいずれかを真空雰囲気下で移載する必要がある。しかし、このような電子部品の移載用途で従来から用いられてきた真空チャックは、吸着ノズルの開口部から内部に空気を吸い込んで対象物を吸着するものであり、真空中では利用できない。大気中であれば粘着剤を用いることも考えられるが、粘着剤はガス発生の原因となり、また、粘着材の蒸発、吸着によって、粘着剤成分がデバイスに吸着すると、デバイスの性能が悪化するおそれがあることから、真空雰囲気下での利用は困難である。 Therefore, it is considered that the frequency adjustment process and the sealing process are continuously performed in a vacuum atmosphere. In this case, it is necessary to transfer at least one of the container and the lid in a vacuum atmosphere. However, the vacuum chuck that has been conventionally used in such applications for transferring electronic components sucks air into the inside from the opening of the suction nozzle and sucks the object, and cannot be used in a vacuum. Although it is conceivable to use a pressure-sensitive adhesive in the atmosphere, the pressure-sensitive adhesive causes gas generation, and if the pressure-sensitive adhesive component is adsorbed on the device due to evaporation or adsorption of the pressure-sensitive adhesive, the performance of the device may deteriorate. Therefore, it is difficult to use in a vacuum atmosphere.

本発明は、このような課題を解決し、真空雰囲気下で複数の工程を実施することのできる電子部品の製造方法および装置を提供することを目的とする。 An object of the present invention is to solve such problems and to provide an electronic component manufacturing method and apparatus capable of performing a plurality of steps in a vacuum atmosphere.

本発明の第１の側面によると、電子回路素子が収容された素子容器に真空雰囲気下で蓋を装着して真空封止型の電子部品とする封止工程を含む電子部品の製造方法において、封止工程に先立ち、電子回路素子、素子容器および蓋の少なくともひとつに対する処理を実行する処理工程と、この処理工程の後に、電子回路素子、素子容器および蓋を封止工程が行われる場所に移載する移載工程とを含み、移載工程は、電子回路素子、素子容器および蓋の少なくともひとつの電子部品構成要素について、その電子部品構成要素の導電部分に、静電吸着電極をその電極の導体部分が導電部分に接することのない状態で近接させ、静電吸着電極に電圧を印加することで、その電子部品構成要素を静電吸着する静電吸着工程を含むことを特徴とする電子部品の製造方法が提供される。 According to a first aspect of the present invention, in a method for manufacturing an electronic component including a sealing step of mounting a lid on a device container containing an electronic circuit device in a vacuum atmosphere to form a vacuum sealed electronic component, Prior to the sealing step, a processing step for performing processing on at least one of the electronic circuit element, the element container and the lid, and after this processing step, the electronic circuit element, the element container and the lid are moved to a place where the sealing step is performed. A transfer process, wherein the transfer process includes, for at least one electronic component component of the electronic circuit element, the element container, and the lid, an electrostatic adsorption electrode disposed on the conductive portion of the electronic component component. An electronic part comprising an electrostatic adsorption step of electrostatically adsorbing an electronic component component by applying a voltage to the electrostatic adsorption electrode by bringing the conductor part close to the conductive part without contacting the conductive part The method of manufacturing is provided.

素子容器の外側には、内部に収容する電子回路素子に電気的に接続される外部接続電極が設けられる。この場合、移載工程では、電子回路素子が収容された状態の素子容器を移載対象とし、静電吸着工程では、静電吸着電極を外部接続電極の表面に近接させ、外部接続電極と静電吸着電極との間に電圧を印加することで素子容器を静電吸着することができる。 An external connection electrode that is electrically connected to an electronic circuit element housed inside is provided on the outside of the element container. In this case, in the transfer process, an element container in which the electronic circuit element is accommodated is set as a transfer target. In the electrostatic adsorption process, the electrostatic adsorption electrode is brought close to the surface of the external connection electrode, and the external connection electrode is statically connected. The device container can be electrostatically adsorbed by applying a voltage between the electroadsorption electrode.

素子容器は、外部接続電極として、素子容器内の電子回路素子に接続される２つの電極に加えグランドまたはフローティング電極を有することができる。この場合、静電吸着工程では、少なくともグランドまたはフローティング電極の表面に静電吸着電極を近接させて静電吸着することができる。 The element container can have a ground or floating electrode as an external connection electrode in addition to two electrodes connected to the electronic circuit element in the element container. In this case, in the electrostatic adsorption step, electrostatic adsorption can be performed by bringing the electrostatic adsorption electrode close to at least the ground or the surface of the floating electrode.

静電吸着工程では、静電吸着電極の表面に誘電体膜が設けられた静電吸着ピンを用い、誘電体膜を外部接続電極に接触させて、静電吸着電極と外部接続電極との間のクーロン力またはジョンソンラーベック力またはグラディエント力により素子容器を吸着することができる。移載対象の素子容器が実質的に長方形状であり、素子容器の外側の１つの面に、外部接続電極として、長方形状の１つの対角に配置され内部の電子回路素子に接続された２つの電極と、長方形状の他の対角に配置された２つのグランドまたはフローティング電極とを有する場合、静電吸着工程では、静電吸着ピンを２本用い、各々の誘電体膜をそれぞれ２つのグランドまたはフローティング電極に接触させて静電吸着することができる。 In the electrostatic adsorption process, an electrostatic adsorption pin having a dielectric film provided on the surface of the electrostatic adsorption electrode is used, the dielectric film is brought into contact with the external connection electrode, and the electrostatic adsorption electrode and the external connection electrode are The device container can be adsorbed by the Coulomb force, Johnson Rabeck force or gradient force. The element container to be transferred has a substantially rectangular shape, and is arranged on one outer surface of the element container as an external connection electrode at one diagonal and connected to an internal electronic circuit element. In the case of having one electrode and two ground or floating electrodes arranged at other diagonals in a rectangular shape, the electrostatic adsorption process uses two electrostatic adsorption pins, and each dielectric film has two It can be electrostatically adsorbed in contact with the ground or floating electrode.

また、静電吸着工程では、静電吸着電極の表面に、移載対象となる素子容器の外部接続電極に対応して、その外部接続電極が設けられている面の外部接続電極以外の部分に接触させるための凸部が設けられた静電吸着ピンを用い、素子容器の外部接続電極が設けられていない部分に凸部を接触させて、凸部の周囲の部分と外部接続電極との間のクーロン力により素子容器を吸着することもできる。移載対象の素子容器が実質的に長方形状であり、素子容器の外側の１つの面に、外部接続電極として、長方形状の１つの対角に配置され内部の電子回路素子に接続された２つの電極と、長方形状の他の対角に配置された２つのグランドまたはフローティング電極とを有する場合、静電吸着工程では、静電吸着ピンとして、凸部が十字形のものを用い、十字形で分割された４つの部分でそれぞれ、２つの電極および２つのグランドまたはフローティング電極を静電吸着することができる。 Further, in the electrostatic adsorption process, on the surface of the electrostatic adsorption electrode corresponding to the external connection electrode of the element container to be transferred, on the portion other than the external connection electrode on the surface where the external connection electrode is provided Using the electrostatic attraction pin provided with the convex part for contact, the convex part is brought into contact with the part of the element container where the external connection electrode is not provided, and between the peripheral part of the convex part and the external connection electrode The element container can also be adsorbed by the Coulomb force. The element container to be transferred has a substantially rectangular shape, and is arranged on one outer surface of the element container as an external connection electrode at one diagonal and connected to an internal electronic circuit element. If there are two electrodes and two ground or floating electrodes arranged at other diagonals in the rectangular shape, the electrostatic chucking step uses a cross-shaped projection as the electrostatic chucking pin. In each of the four parts divided by (2), two electrodes and two ground or floating electrodes can be electrostatically adsorbed.

電子回路素子は、素子容器内に固定されて水晶振動子を構成する水晶片であり、処理工程は、素子容器内に固定された水晶片に対して周波数調整を実施する周波数調整工程を含むことができる。 The electronic circuit element is a crystal piece that is fixed in the element container and constitutes a crystal resonator, and the processing step includes a frequency adjustment step that performs frequency adjustment on the crystal piece fixed in the element container. Can do.

移載工程では、電子回路素子が収容された状態の素子容器を、処理工程で使用される処理トレーから封止工程で使用される封止トレーに移載することができる。 In the transfer process, the element container in which the electronic circuit element is accommodated can be transferred from the processing tray used in the processing process to the sealing tray used in the sealing process.

蓋は金属製であり、処理工程は、蓋を熱処理して脱ガスする工程を含み、移載工程では、蓋を移載対象として封止工程の作業サイトに移載し、静電吸着工程では、静電吸着電極の表面に誘電体膜が設けられた静電吸着ピンを用い、誘電体膜を蓋に接触させて、蓋を吸着することができる。この場合、移載工程では、蓋を封止工程で用いられる封止トレー上に複数並べて配置し、電子回路素子のうち不良があったものに対応する蓋については、封止トレーから取り除くことができる。 The lid is made of metal, and the processing step includes a step of heat-treating the lid and degassing. In the transfer step, the lid is transferred to the work site of the sealing step as a transfer target, and in the electrostatic adsorption step The lid can be adsorbed by using an electrostatic attraction pin in which a dielectric film is provided on the surface of the electrostatic adsorption electrode and bringing the dielectric film into contact with the lid. In this case, in the transfer step, a plurality of lids are arranged side by side on the sealing tray used in the sealing step, and the lid corresponding to the defective electronic circuit element can be removed from the sealing tray. it can.

移載工程では、電子回路素子が収容された状態の素子容器と蓋とをそれぞれ移載対象とし、静電吸着工程では、静電吸着電極として、素子容器用の第１の静電吸着電極と蓋用の第２の静電吸着電極とを用い、封止工程では、第１の静電吸着電極により吸着されている状態の素子容器と、第２の静電吸着電極により吸着されている状態の蓋とを、互いに対向させ、第１の静電吸着電極を台座として、ローラー電極によりシーム溶接封止することができる。この場合、封止工程では、素子容器と蓋とを、１組ずつ、または列毎に処理する。 In the transfer process, the element container and the lid in which the electronic circuit elements are accommodated are respectively transferred, and in the electrostatic adsorption process, as the electrostatic adsorption electrode, the first electrostatic adsorption electrode for the element container and Using the second electrostatic adsorption electrode for the lid, and in the sealing process, the element container in the state of being adsorbed by the first electrostatic adsorption electrode and the state of being adsorbed by the second electrostatic adsorption electrode Can be sealed by seam welding with a roller electrode using the first electrostatic adsorption electrode as a base. In this case, in the sealing process, the element container and the lid are processed one by one or for each column.

本発明の第２の側面によると、電子回路素子、この電子回路素子を収容する素子容器、および電子回路素子が収容された状態で素子容器を封止する蓋の少なくともひとつに対する処理を実行する封止前処理部と、電子回路素子が収容された状態の素子容器に蓋を装着して真空封止型の電子部品とする封止処理部と、封止前処理部による処理が施された電子回路、素子容器および蓋を封止処理部に移載する移載機構とを備え、移載機構は、静電吸着電極と、この静電吸着電極を操作するマニピュレータとを備え、マニピュレータは、電子回路素子、素子容器および蓋の少なくともひとつの電子部品構成要素について、その電子部品構成要素の導電部分に、静電吸着電極をその電極の導体部分が導電部分に接することのない状態で近接させ、静電吸着電極に電圧を印加することで、その電子部品構成要素を静電吸着することを特徴とする電子部品の製造装置が提供される。 According to a second aspect of the present invention, an electronic circuit element, an element container that accommodates the electronic circuit element, and a seal that executes processing on at least one of the lids that seal the element container in a state where the electronic circuit element is accommodated. A pre-stop processing unit, a sealing processing unit that is attached to a device container in a state in which an electronic circuit element is accommodated to form a vacuum-sealed electronic component, and an electron that has been processed by the pre-sealing processing unit A transfer mechanism that transfers the circuit, the element container, and the lid to the sealing processing unit. The transfer mechanism includes an electrostatic chucking electrode and a manipulator that operates the electrostatic chucking electrode. For at least one electronic component component of a circuit element, an element container, and a lid, the electrostatic adsorption electrode is brought close to the conductive portion of the electronic component component in a state where the conductive portion of the electrode is not in contact with the conductive portion, Electrostatic By applying a voltage to the deposition electrode manufacturing apparatus of electronic components, characterized by electrostatically attracting the electronic component element is provided.

静電吸着電極には、その表面に、移載対象となる電子部品構成要素の導電部分の表面に接触させるための誘電体膜が設けられる。 The electrostatic adsorption electrode is provided with a dielectric film on the surface thereof for contacting the surface of the conductive portion of the electronic component component to be transferred.

あるいは、静電吸着電極は、その表面に、移載対象となる電子部品構成要素の導電部分が設けられている面の導電部分以外の部分に対応して、導電部分以外の部分に接触して表面のそれ以外の部分と電子部品構成要素の導電部分とを接触させずに対向させて維持する凸部を有する構成とすることもできる。この場合、移載対象となる電子部品構成要素は素子容器であり、この素子容器は、実質的に長方形状であり、外側の１つの面に、長方形状の１つの対角に配置され内部の電子回路素子に接続された２つの電極と、長方形状の他の対角に配置された２つのグランドまたはフローティング電極とを有し、記静電吸着電極の凸部は、２つの電極および２つのグランドまたはフローティング電極の間の形状に対応して、十字形に設けられている構成とすることができる。 Alternatively, the electrostatic adsorption electrode is in contact with a portion other than the conductive portion corresponding to a portion other than the conductive portion of the surface on which the conductive portion of the electronic component component to be transferred is provided. It can also be set as the structure which has the convex part which makes the other part of the surface and the electroconductive part of an electronic component component oppose and maintain without contacting. In this case, the electronic component component to be transferred is an element container, and the element container is substantially rectangular, and is disposed on one outer surface and arranged diagonally on one diagonal. Two electrodes connected to the electronic circuit element, and two ground or floating electrodes arranged at other diagonals in a rectangular shape, and the convex portion of the electrostatic chucking electrode has two electrodes and two Corresponding to the shape between the ground or the floating electrodes, a cross-shaped configuration can be adopted.

電子回路素子は、素子容器内に固定されて水晶振動子を構成する水晶片であり、封止前処理部は、素子容器内に固定された水晶片に対して周波数調整を実施する周波数調整処理部を含むことができる。 The electronic circuit element is a crystal piece that is fixed in the element container and constitutes a crystal resonator, and the pre-sealing processing unit performs frequency adjustment processing that performs frequency adjustment on the crystal piece fixed in the element container. Parts can be included.

移載機構は、電子回路素子が収容された状態の素子容器を、封止前処理部で使用される処理トレーから封止処理部で使用される封止トレーに移載するように制御される。 The transfer mechanism is controlled so as to transfer the element container in which the electronic circuit element is accommodated from the processing tray used in the pre-sealing processing unit to the sealing tray used in the sealing processing unit. .

蓋は金属製であり、封止前処理部は、蓋を熱処理して脱ガスする加熱処理部を含み、静電吸着電極には、その表面に、蓋の表面に接触させるための誘電体膜が設けられ、移載機構は、蓋を移載対象とし、誘電体膜を蓋に接触させて蓋を吸着するように制御される構成とすることもできる。 The lid is made of metal, and the pre-sealing treatment section includes a heat treatment section that heats the lid to degas and the electrostatic adsorption electrode has a dielectric film for contacting the surface of the lid with the surface of the electrostatic adsorption electrode. And the transfer mechanism can be configured to be controlled so that the lid is a transfer target, and the dielectric film is brought into contact with the lid to attract the lid.

移載機構は、蓋を封止工程で用いられる封止トレー上に複数並べて配置し、電子回路素子のうち不良があったものに対応する蓋については、封止トレーから取り除くように制御される構成とすることもできる。 The transfer mechanism is arranged such that a plurality of lids are arranged side by side on a sealing tray used in the sealing step, and a lid corresponding to a defective electronic circuit element is removed from the sealing tray. It can also be configured.

移載機構は、電子回路素子が収容された状態の素子容器と蓋とをそれぞれ移載対象とし、静電吸着電極として、素子容器用の第１の静電吸着電極と、蓋用の第２の静電吸着電極とを有し、封止処理部は、第１の静電吸着電極により吸着されている状態の素子容器と、第２の静電吸着電極により吸着されている状態の蓋とを、互いに対向させ、第１の静電吸着電極を台座としてシーム溶接封止するローラー電極を有することもできる。この場合、封止処理部は、素子容器と蓋とを、１組ずつ、または列毎に処理する。 The transfer mechanism has an element container and a lid in a state in which the electronic circuit element is accommodated as a transfer object, and serves as an electrostatic adsorption electrode as a first electrostatic adsorption electrode for the element container and a second for the lid. And the sealing processing unit includes an element container that is attracted by the first electrostatic attracting electrode, and a lid that is attracted by the second electrostatic attracting electrode. Can also have roller electrodes that are seam welded and sealed with the first electrostatic adsorption electrode as a pedestal. In this case, the sealing processing unit processes the element container and the lid one by one or for each column.

本発明によると、真空雰囲気下で複数の電子部品製造工程を実施することができる。本発明を特に水晶振動子の製造工程で利用することで、水晶片に対する周波数調整工程あるいはリッドの加熱（アニール）処理と封止工程とを真空雰囲気下で連続して行うことができる。電子部品を大気に晒すことなく真空雰囲気下で搬送することにより、電子部品を高い良品率で製造することができる。 According to the present invention, a plurality of electronic component manufacturing steps can be performed under a vacuum atmosphere. By utilizing the present invention particularly in the manufacturing process of the crystal resonator, the frequency adjusting process for the crystal piece or the heating (annealing) process of the lid and the sealing process can be continuously performed in a vacuum atmosphere. By transporting the electronic components in a vacuum atmosphere without exposing them to the air, the electronic components can be manufactured at a high yield rate.

図１は、本発明の一実施形態の電子部品の製造装置を示すブロック構成図である。FIG. 1 is a block configuration diagram showing an electronic component manufacturing apparatus according to an embodiment of the present invention. 図２は、素子容器の移載に関連する部分の構成を詳しく説明するブロック構成図である。FIG. 2 is a block diagram illustrating in detail the configuration of the part related to the transfer of the element container. 図３は、図１に示す製造装置で製造工程の一部が行われる電子部品の一例を示す図であり、水晶振動子の構成を説明する図である。FIG. 3 is a diagram illustrating an example of an electronic component in which a part of the manufacturing process is performed by the manufacturing apparatus illustrated in FIG. 1, and is a diagram illustrating a configuration of a crystal resonator. 図４は、本発明の実施形態における移載工程を説明する図である。FIG. 4 is a diagram illustrating a transfer process in the embodiment of the present invention. 図５は、水晶振動子の製造工程を説明する図である。FIG. 5 is a diagram for explaining a manufacturing process of the crystal unit. 図６は、図４に示す工程における素子容器を、図４と上下反転した方向から見た斜視図である。FIG. 6 is a perspective view of the element container in the step shown in FIG. 図７は、素子容器の移載をさらに詳しく説明する図である。FIG. 7 is a diagram for explaining the transfer of the element container in more detail. 図８は、周波数調整処理部の概略を説明する平面図である。FIG. 8 is a plan view for explaining the outline of the frequency adjustment processing unit. 図９は、周波数調整処理部の概略を説明する側面図である。FIG. 9 is a side view for explaining the outline of the frequency adjustment processing unit. 図１０は、第１の移載機構による素子容器の移載工程の概略を説明する図である。FIG. 10 is a diagram for explaining the outline of the element container transfer step by the first transfer mechanism. 図１１は、第２の移載機構によるリッドの移載工程の概略を説明する図である。FIG. 11 is a diagram for explaining the outline of the lid transfer process by the second transfer mechanism. 図１２は、封止処理部の概略説明図である。FIG. 12 is a schematic explanatory diagram of a sealing processing unit. 図１３は、図３に示す静電吸着ピンとは異なる静電吸着ピンを用いた移載工程を説明する図である。FIG. 13 is a diagram for explaining a transfer process using an electrostatic attraction pin different from the electrostatic attraction pin shown in FIG. 3. 図１４は、図１３に示す移載工程で用いられる静電吸着ピンの先端の構成の一例を示す斜視図である。FIG. 14 is a perspective view showing an example of the configuration of the tip of the electrostatic attraction pin used in the transfer step shown in FIG. 図１５は、図１３に示す移載工程で用いられる静電吸着ピンの先端の構成の別の例を示す斜視図である。FIG. 15 is a perspective view showing another example of the configuration of the tip of the electrostatic attraction pin used in the transfer step shown in FIG. 図１６は、封止工程で用いることのできる従来のシーム溶接封止方法を説明する図である。FIG. 16 is a diagram for explaining a conventional seam weld sealing method that can be used in the sealing step. 図１７は、静電吸着を利用したシーム溶接封止方法を説明する図である。FIG. 17 is a diagram for explaining a seam welding sealing method using electrostatic attraction.

図１は、本発明の実施形態に係る電子部品の製造装置のブロック構成図である。ここでは、水晶振動子の製造工程を例に説明する。この装置は、真空装置１内に、電子回路素子、この電子回路素子を収容する素子容器、および電子回路素子が収容された状態で素子容器を封止する蓋（リッド）の少なくともひとつに対する処理工程を実行する封止前処理部として、周波数調整処理部２および加熱処理部３を備え、電子回路素子が収容された状態の素子容器に蓋（リッド）を装着して真空封止型の電子部品とする封止工程を実行する封止処理部６を備え、さらに、電子回路、素子容器および蓋を封止処理部６に移載する移載工程を実行する移載機構４，５を備える。周波数調整処理部２、加熱処理部３、移載機構４，５および封止処理部６は、互いに搬送機構７により連結され、真空装置１外の制御部８により制御される。 FIG. 1 is a block diagram of an electronic component manufacturing apparatus according to an embodiment of the present invention. Here, the manufacturing process of the crystal unit will be described as an example. This apparatus is a processing step for at least one of an electronic circuit element, an element container for accommodating the electronic circuit element, and a lid (lid) for sealing the element container in a state where the electronic circuit element is accommodated in the vacuum apparatus 1. As a pre-sealing processing unit for executing the above, a frequency adjustment processing unit 2 and a heating processing unit 3 are provided, and a lid (lid) is attached to an element container in a state in which an electronic circuit element is accommodated, and a vacuum sealed electronic component The sealing process part 6 which performs the sealing process to be further provided is provided, Furthermore, the transfer mechanism 4 and 5 which performs the transfer process which transfers an electronic circuit, an element container, and a lid | cover to the sealing process part 6 are provided. The frequency adjustment processing unit 2, the heat processing unit 3, the transfer mechanisms 4 and 5, and the sealing processing unit 6 are connected to each other by the transport mechanism 7 and controlled by the control unit 8 outside the vacuum apparatus 1.

周波数調整処理部２は、素子容器に収容された電子回路素子としての水晶片に、周波数調整処理を行う。加熱処理部３は、金属製のリッドを加熱（アニール）して脱ガスを行う。ここでは水晶振動子の製造を例にしているが、他の素子を製造する場合には、その素子に対応する封止前処理部を設けることができる。移載機構５は、加熱処理部３で処理されたリッドを移載機構４に移載する。移載機構４は、周波数調整処理部２で処理された素子容器を移載機構５から搬送されたリッドの上に移載し、搬送機構７を介して、封止処理部６に移送する。 The frequency adjustment processing unit 2 performs frequency adjustment processing on a crystal piece as an electronic circuit element accommodated in the element container. The heat treatment unit 3 performs degassing by heating (annealing) the metal lid. Here, the manufacture of a crystal resonator is taken as an example. However, when other elements are manufactured, a pre-sealing treatment unit corresponding to the element can be provided. The transfer mechanism 5 transfers the lid processed by the heat processing unit 3 to the transfer mechanism 4. The transfer mechanism 4 transfers the element container processed by the frequency adjustment processing unit 2 onto the lid transferred from the transfer mechanism 5 and transfers it to the sealing processing unit 6 through the transfer mechanism 7.

図２は、素子容器の移載に関連する部分の構成を詳しく説明するブロック構成図である。素子容器の移載を行う移載機構４は、マニピュレータ４０と、このマニピュレータ４０により操作される静電吸着ピン４１，４２とを備える。マニピュレータ４０は、静電吸着工程を実行し、静電吸着ピン４１，４２の静電吸着電極を、吸着対象（この場合には素子容器）の導電部分に接することのない状態で近接させ、静電吸着電極に電圧を印加することで、その吸着対象を静電吸着する。 FIG. 2 is a block diagram illustrating in detail the configuration of the part related to the transfer of the element container. The transfer mechanism 4 that transfers the element container includes a manipulator 40 and electrostatic chuck pins 41 and 42 operated by the manipulator 40. The manipulator 40 performs an electrostatic chucking process, and closes the electrostatic chucking electrodes of the electrostatic chucking pins 41 and 42 without contacting the conductive portion of the suction target (in this case, the element container). By applying a voltage to the electroadsorption electrode, the adsorption object is electrostatically adsorbed.

図３は、移載機構４による移載対象となる水晶振動子の構成を説明する図である。この水晶振動子１０は、電子回路素子としての水晶片１１が、素子容器１２内に収容されている。素子容器１２の外側には、外部接続電極として、電極パッド１３，１４，１５および１６が設けられる。電極パッド１３，１４は、素子容器１２内の水晶片１１に接続され、電極パッド１５，１６は、グランドまたはフローティングの電極である。素子容器１２は実質的に長方形状であり、電極パッド１３，１４，１５および１６は、素子容器１２の外側の１つの面に設けられる。電極パッド１３，１４は長方形状の１つの対角に配置され、電極パッド１５，１６は長方形状の他の対角に配置されている。 FIG. 3 is a diagram for explaining the configuration of a crystal resonator to be transferred by the transfer mechanism 4. In the crystal resonator 10, a crystal piece 11 as an electronic circuit element is accommodated in an element container 12. On the outer side of the element container 12, electrode pads 13, 14, 15 and 16 are provided as external connection electrodes. The electrode pads 13 and 14 are connected to the crystal piece 11 in the element container 12, and the electrode pads 15 and 16 are ground or floating electrodes. The element container 12 has a substantially rectangular shape, and the electrode pads 13, 14, 15 and 16 are provided on one surface outside the element container 12. The electrode pads 13 and 14 are arranged at one diagonal of the rectangular shape, and the electrode pads 15 and 16 are arranged at the other diagonal of the rectangular shape.

図４は、図２に示す移載機構４による図３に示す水晶振動子１０の移載工程を説明する図である。静電吸着ピン４１，４２はそれぞれ、棒状の静電吸着電極４３，４４を有する。静電吸着電極４３，４４の先端部の表面にはそれぞれ、移載対象の水晶振動子１０の外部接続電極、特に電極パッド１５，１６の表面に接触させるため、誘電体膜４５，４６が設けられている。誘電体膜は適宜選択すればよいが、実施例ではアルミナまたはテフロン（登録商標）を用いるものとする。静電吸着電極４３，４４には、それぞれ直流電源４７，４８が接続される。この例では、電極パッド１５，１６がグランドとなっているものとしている。また、静電吸着電極４３，４４には互いに別極性の電圧、すなわち、静電吸着電極４３には負電圧、静電吸着電極４４には正電圧が、それぞれ印加されるものとする。 FIG. 4 is a diagram for explaining a transfer process of the crystal resonator 10 shown in FIG. 3 by the transfer mechanism 4 shown in FIG. The electrostatic chuck pins 41 and 42 have rod-shaped electrostatic chuck electrodes 43 and 44, respectively. Dielectric films 45 and 46 are provided on the surfaces of the tips of the electrostatic adsorption electrodes 43 and 44, respectively, in order to contact the external connection electrodes of the crystal resonator 10 to be transferred, particularly the surfaces of the electrode pads 15 and 16. It has been. The dielectric film may be selected as appropriate. In the embodiment, alumina or Teflon (registered trademark) is used. DC power supplies 47 and 48 are connected to the electrostatic adsorption electrodes 43 and 44, respectively. In this example, the electrode pads 15 and 16 are assumed to be ground. Further, it is assumed that voltages having different polarities are applied to the electrostatic attracting electrodes 43 and 44, that is, a negative voltage is applied to the electrostatic attracting electrode 43 and a positive voltage is applied to the electrostatic attracting electrode 44, respectively.

図４において、水晶振動子１０および静電吸着ピン４１，４２は真空雰囲気下に置かれており、水晶振動子１０を周波数調整処理部３で使用される処理トレーから、封止処理部６で使用される封止トレーに移載するように制御される。すなわち、マニピュレータ４０により静電吸着ピン４１，４２を操作して、誘電体膜４５，４６をそれぞれ電極パッド１５，１６の表面に接触させる。これにより、静電吸着電極４３，４４がそれぞれ電極パッド１５，１６の表面に近接した状態となる。この状態で、静電吸着電極４３と電極パッド１５の間に電源４７から電圧を印加し、同時に、静電吸着電極４４と電極パッド１６の間に電源４８から電圧を印加する。これにより、静電吸着電極４３と電極パッド１５の間、および静電吸着電極４４と電極パッド１６の間に、それぞれクーロン力が生じる。このクーロン力により、水晶振動子１０（厳密には水晶片１１が収容された状態の素子容器１２、以下同様）を吸着することができる。誘電体膜の材料は適宜選択すればよく、例えば静電吸着電極の表面に体積抵抗率１０^１０〜１０^１２Ω・ｃｍの誘電体膜を設けて、ジョンソンラーベック力により水晶振動子１０を吸着してもよい。または、グラディエント力により水晶振動子１０を吸着してもよい。水晶振動子１０が吸着された状態で静電吸着ピン４１，４２を移動し、作業サイトを移動して、水晶振動子１０を別の作業サイトに移載することができる。 In FIG. 4, the crystal unit 10 and the electrostatic chuck pins 41 and 42 are placed in a vacuum atmosphere, and the crystal unit 10 is moved from the processing tray used in the frequency adjustment processing unit 3 to the sealing processing unit 6. It is controlled to transfer to the used sealing tray. That is, the electrostatic chuck pins 41 and 42 are operated by the manipulator 40 to bring the dielectric films 45 and 46 into contact with the surfaces of the electrode pads 15 and 16, respectively. As a result, the electrostatic chucking electrodes 43 and 44 are close to the surfaces of the electrode pads 15 and 16, respectively. In this state, a voltage is applied from the power source 47 between the electrostatic chucking electrode 43 and the electrode pad 15, and at the same time, a voltage is applied from the power source 48 between the electrostatic chucking electrode 44 and the electrode pad 16. Thereby, a Coulomb force is generated between the electrostatic chucking electrode 43 and the electrode pad 15 and between the electrostatic chucking electrode 44 and the electrode pad 16. With this Coulomb force, the crystal resonator 10 (strictly speaking, the element container 12 in which the crystal piece 11 is accommodated, and so on) can be adsorbed. The material of the dielectric film may be appropriately selected. For example, a dielectric film having a volume resistivity of 10 ¹⁰ to 10 ¹² Ω · cm is provided on the surface of the electrostatic adsorption electrode, and the quartz resonator 10 is adsorbed by the Johnson Rabeck force. May be. Alternatively, the crystal resonator 10 may be adsorbed by a gradient force. The quartz crystal vibrator 10 can be transferred to another work site by moving the electrostatic chuck pins 41 and 42 while the crystal vibrator 10 is sucked and moving the work site.

水晶振動子１０の製造工程をさらに詳しく説明し、その工程における素子容器１２の移載について説明する。 The manufacturing process of the crystal unit 10 will be described in more detail, and the transfer of the element container 12 in the process will be described.

図５は、水晶振動子の製造工程を説明する図である。ここでは、表面実装型水晶振動子を例に説明する。まず、図５（Ａ）に示すように、所望の周波数が得られるサイズに加工された水晶片１１を用意する。この水晶片１１の両面に、図５（Ｂ）に示すように、蒸着により金属膜を形成して、それぞれ励振電極１７，１８とする。図５（Ｂ）において、裏面の励振電極１８は破線で示す。続いて、図５（Ｃ）に示すように、励振電極１７，１８が形成された水晶片１１を、素子容器１２内に固定する。素子容器１２の表面（図では裏面になっている）には、図３に示すように、電極パッド１３，１４，１５，１６が設けられている。水晶片１１に設けられた励振電極１７，１８は、それぞれ電極パッド１３，１４に電気的に接続される。この状態、すなわち図５（Ｄ）に示す状態で、周波数調整工程が実施される。周波数調整工程後、図５（Ｅ）に示すように、素子容器１２をリッド１２ａで封止する。なお、図５においては、説明のため、水晶片１１、素子容器１２およびリッド１２ａの上下関係を逆にしている。 FIG. 5 is a diagram for explaining a manufacturing process of the crystal unit. Here, a surface mounted crystal resonator will be described as an example. First, as shown in FIG. 5A, a crystal piece 11 processed to a size that can obtain a desired frequency is prepared. As shown in FIG. 5B, metal films are formed on both surfaces of the crystal piece 11 by vapor deposition to form excitation electrodes 17 and 18, respectively. In FIG. 5B, the excitation electrode 18 on the back surface is indicated by a broken line. Subsequently, as illustrated in FIG. 5C, the crystal piece 11 on which the excitation electrodes 17 and 18 are formed is fixed in the element container 12. As shown in FIG. 3, electrode pads 13, 14, 15, and 16 are provided on the surface of the element container 12 (which is the back surface in the drawing). Excitation electrodes 17 and 18 provided on the crystal piece 11 are electrically connected to electrode pads 13 and 14, respectively. In this state, that is, the state shown in FIG. 5D, the frequency adjustment step is performed. After the frequency adjustment step, the element container 12 is sealed with a lid 12a as shown in FIG. In FIG. 5, for the sake of explanation, the vertical relationship among the crystal piece 11, the element container 12 and the lid 12 a is reversed.

図６は、図５に示す製造工程における素子容器、特に素子容器１２を、図５と上下反転した方向から見た斜視図である。この素子容器１２を、図５（Ｄ）に示す周波数調整工程の後、図４に示す静電吸着ピン４１，４２で吸着し、リッド１２ａが置かれている作業サイトに搬送する。そして、図５（Ｄ）に示す封止工程を実行する。 FIG. 6 is a perspective view of the element container in the manufacturing process shown in FIG. After the frequency adjustment step shown in FIG. 5D, the element container 12 is sucked by the electrostatic suction pins 41 and 42 shown in FIG. 4 and transported to the work site where the lid 12a is placed. Then, the sealing step shown in FIG.

吸着力の点からは、吸着される電極（電極パッド１５，１６）はグランドに接続されていることが望ましいが、フローティング電極を吸着の対象としてもよい。さらには、素子容器内に収容される電子回路素子（この場合は水晶片１１）に影響がないものであれば、その電子回路素子に接続される電極（電極パッド１３，１４）を利用することもできる。 From the standpoint of attracting force, the attracted electrodes (electrode pads 15 and 16) are preferably connected to the ground, but a floating electrode may be the subject of attracting. Furthermore, if there is no influence on the electronic circuit element accommodated in the element container (in this case, the crystal piece 11), the electrodes (electrode pads 13 and 14) connected to the electronic circuit element should be used. You can also.

以上の説明では、図６に示すような４つの電極パッドを有する水晶振動子を例に説明したが、吸着対象は少なくとも１つ以上の電極パッドを有していればよく、図６に示す例に限定されない。また、静電吸着ピンの数も適宜設定すればよく、１つの静電吸着ピンが複数の電極パッドに同時に接触して吸着する構成としてもよい。例えば音叉型水晶振動子は２つの電極パッドを有しており、２本の静電吸着ピンを２つの電極パッド夫々に接触させてもよいし、１本の静電吸着ピンを２つの電極パッドに接触させて１本の静電吸着ピンで吸着搬送してもよい。図６では吸着の対象となる電極パッド１５，１６が２つある場合を説明したが、吸着の対象となる電極は１つでもよい。また、より多くの電極が設けられている電子部品についても、同様にして移載することができる。吸着対象となりうる複数の電極がある場合に、その１つあるいは一部だけを吸着の対象とすることもでき、全てを吸着の対象とすることもできる。また、電極が容器の広い範囲に設けられている場合にも、同様に移載することができる。表面実装型水晶振動子以外の形態の水晶振動子や、水晶振動子以外の電子部品でも、例えば容器の外側に導電部が設けられているものであれば、同様に移載することができる。 In the above description, the crystal resonator having four electrode pads as shown in FIG. 6 has been described as an example. However, the suction target only needs to have at least one electrode pad. The example shown in FIG. It is not limited to. The number of electrostatic chuck pins may be set as appropriate, and one electrostatic chuck pin may be configured to simultaneously contact and chuck a plurality of electrode pads. For example, a tuning fork type crystal unit has two electrode pads, and two electrostatic suction pins may be brought into contact with each of the two electrode pads, or one electrostatic suction pin is connected to two electrode pads. It is also possible to carry out suction conveyance with a single electrostatic suction pin in contact with the substrate. Although FIG. 6 illustrates the case where there are two electrode pads 15 and 16 to be attracted, the number of electrodes to be attracted may be one. Also, electronic components provided with more electrodes can be transferred in the same manner. When there are a plurality of electrodes that can be suction targets, only one or a part of them can be the target of suction, or all of them can be targets of suction. Moreover, when the electrode is provided in a wide range of the container, it can be transferred similarly. Even a crystal resonator other than the surface-mounted crystal resonator or an electronic component other than the crystal resonator can be transferred in the same manner as long as the conductive portion is provided outside the container.

図７は、移載機構４による水晶振動子の移載をさらに詳しく説明する図である。周波数調整処理部２から封止処理部６への移載は、実際には、周波数調整処理部２で使用された周波数調整トレー２１を移載機構４による作業サイトである移載室に搬送し、そこで、水晶振動子を封止処理部６で使用する封止トレー６１に移載する。周波数調整トレー２１および封止トレー６１の搬送は、搬送機構７により行われる。搬送機構７は、図７では周波数調整処理部２と移載室との間、および移載室と封止処理部６との間の搬送しか示していないが、周波数調整処理部２への周波数調整トレー２１の搬入、周波数調整処理部２内での周波数調整トレー２１の移動、封止処理部６内での封止トレー６１の移動、および封止処理部６からの封止トレー６１の搬出も行う。ここでは各サイトのトレーあるいはその他の容器の搬送手段を総括して搬送機構７として説明するが、各サイトで独立の搬送手段を設けてもよい。 FIG. 7 is a diagram for explaining the transfer of the crystal resonator by the transfer mechanism 4 in more detail. The transfer from the frequency adjustment processing unit 2 to the sealing processing unit 6 is actually carried by transferring the frequency adjustment tray 21 used in the frequency adjustment processing unit 2 to a transfer chamber which is a work site by the transfer mechanism 4. Therefore, the crystal resonator is transferred to the sealing tray 61 used in the sealing processing unit 6. The frequency adjusting tray 21 and the sealing tray 61 are transported by the transport mechanism 7. In FIG. 7, the transfer mechanism 7 shows only transfer between the frequency adjustment processing unit 2 and the transfer chamber and between the transfer chamber and the sealing processing unit 6. Loading of the adjustment tray 21, movement of the frequency adjustment tray 21 within the frequency adjustment processing unit 2, movement of the sealing tray 61 within the sealing processing unit 6, and removal of the sealing tray 61 from the sealing processing unit 6 Also do. Here, trays at each site or other container transport means will be collectively described as the transport mechanism 7, but an independent transport means may be provided at each site.

図８および図９は周波数調整処理部２の概略説明図であり、図８は平面図、図９は側面図である。図３に示す水晶振動子１０は、周波数調整トレー２１の凹部に収容され、搬送機構７により周波数調整処理部２に搬入される。周波数調整トレー２１の底面には開口が設けられ、素子容器１２の開口が底面に対面する向きで収容されるため、周波数調整トレー２１の底面の開口から励振電極１７が露出する。周波数調整処理部２の内部には、イオンビームを照射するイオンガン２２とイオンビームを遮蔽するシャッター２３とが設けられ、励振電極１７にイオンビームを照射することで、水晶振動子１０の周波数を調整する。水晶振動子１０は周波数調整トレー２１上にマトリクス配列され、搬送機構７は、周波数調整トレー２１上の任意の列がイオンガン２２のイオンビーム照射エリアに位置するようトレーを搬送する。図示しない周波数測定手段により水晶振動子１０の周波数を測定し、所望の周波数となる時点でシャッター２３を閉じて、周波数調整を終了する。周波数調整トレー２１上の全ての水晶振動子１０の処理が完了すると、周波数調整トレー２１は周波数調整処理部２から搬出され、搬送機構７により移載機構４に搬入される。 8 and 9 are schematic explanatory diagrams of the frequency adjustment processing unit 2, FIG. 8 is a plan view, and FIG. 9 is a side view. The crystal resonator 10 shown in FIG. 3 is accommodated in the concave portion of the frequency adjustment tray 21 and is carried into the frequency adjustment processing unit 2 by the transport mechanism 7. Since an opening is provided on the bottom surface of the frequency adjustment tray 21 and the opening of the element container 12 is accommodated in a direction facing the bottom surface, the excitation electrode 17 is exposed from the opening on the bottom surface of the frequency adjustment tray 21. An ion gun 22 that irradiates the ion beam and a shutter 23 that shields the ion beam are provided inside the frequency adjustment processing unit 2, and the frequency of the crystal resonator 10 is adjusted by irradiating the excitation electrode 17 with the ion beam. To do. The crystal units 10 are arranged in a matrix on the frequency adjustment tray 21, and the transport mechanism 7 transports the tray so that an arbitrary column on the frequency adjustment tray 21 is positioned in the ion beam irradiation area of the ion gun 22. The frequency of the crystal unit 10 is measured by a frequency measuring means (not shown), and the shutter 23 is closed when the desired frequency is reached, and the frequency adjustment is completed. When the processing of all the crystal units 10 on the frequency adjustment tray 21 is completed, the frequency adjustment tray 21 is carried out from the frequency adjustment processing unit 2 and carried into the transfer mechanism 4 by the conveyance mechanism 7.

図１０は、移載機構４の動作の概略を説明する図である。移載機構４は、上述したように、周波数調整トレー２１から封止トレー６１に水晶振動子１０を移載する装置である。予めリッド１２ａが収容された封止トレー６１のリッド１２ａ上に、素子容器１２を移載する。 FIG. 10 is a diagram for explaining the outline of the operation of the transfer mechanism 4. As described above, the transfer mechanism 4 is a device that transfers the crystal unit 10 from the frequency adjustment tray 21 to the sealing tray 61. The element container 12 is transferred onto the lid 12a of the sealing tray 61 in which the lid 12a is accommodated in advance.

次に、リッド１２ａの移載について説明する。図１１は、移載機構５の動作の概略を説明する図である。 Next, transfer of the lid 12a will be described. FIG. 11 is a diagram for explaining the outline of the operation of the transfer mechanism 5.

加熱処理部３でアニールされたリッド１２ａは、加熱処理部３で使用された加熱容器ごと、搬送機構７により、移載機構５による作業サイトである移載室に搬送される。移載機構５は、図４に示された静電吸着ピン４１，４２と同様の静電吸着ピン５１を用いて、リッド１２ａを封止トレー６１に移載する。リッド１２ａは金属製であり、誘電体膜を介して静電吸着電極とリッド１２ａとの間に電圧を印加することでリッド１２ａを吸着する。リッド１２ａは導電部を有していればよく、絶縁部材に導電膜が形成された構成であってもよい。例えばセラミックや水晶、ガラス等からなるリッドに金メッキを施し、ろう材としてのＡｕＳｎを形成した部分を静電吸着に利用してもよい。このとき、リッド１２ａは封止トレー６１上に複数並べて配置されるが、周波数調整工程で不良があった水晶振動子１０に対応するリッド１２ａについては、封止トレー６１から取り除くように制御される。リッド１２ａが収容された封止トレー６１は、搬送機構７により、上述した移載機構４の作業サイトに搬送される。 The lid 12 a annealed in the heat treatment unit 3 is transferred by the transfer mechanism 7 to the transfer chamber, which is a work site by the transfer mechanism 5, for each heating container used in the heat processing unit 3. The transfer mechanism 5 transfers the lid 12 a to the sealing tray 61 using the electrostatic suction pins 51 similar to the electrostatic suction pins 41 and 42 shown in FIG. 4. The lid 12a is made of metal, and adsorbs the lid 12a by applying a voltage between the electrostatic adsorption electrode and the lid 12a via a dielectric film. The lid 12a may have a conductive portion, and may have a configuration in which a conductive film is formed on an insulating member. For example, a lid made of ceramic, quartz, glass or the like may be plated with gold, and a portion where AuSn as a brazing material is formed may be used for electrostatic adsorption. At this time, a plurality of lids 12 a are arranged side by side on the sealing tray 61, but the lid 12 a corresponding to the crystal unit 10 having a defect in the frequency adjustment process is controlled to be removed from the sealing tray 61. . The sealing tray 61 in which the lid 12a is accommodated is transported by the transport mechanism 7 to the work site of the transfer mechanism 4 described above.

図１２は、封止処理部６の概略説明図である。搬送機構７は、リッド１２ａおよび素子容器１２を搭載する封止トレー６１を、封止処理部６に搬入する。封止処理部６には封止トレー６１を挟むように加熱ブロック６２，６３が設けられ、封止トレー６１を加熱ブロック６２，６３間で加熱することで、リッド１２ａと素子容器１２とが接合する。 FIG. 12 is a schematic explanatory diagram of the sealing processing unit 6. The transport mechanism 7 carries the sealing tray 61 on which the lid 12 a and the element container 12 are mounted into the sealing processing unit 6. The sealing processing unit 6 is provided with heating blocks 62 and 63 so as to sandwich the sealing tray 61, and the lid 12a and the element container 12 are joined by heating the sealing tray 61 between the heating blocks 62 and 63. To do.

図１３は、静電吸着ピンの別の構成例を説明する図である。この静電吸着ピン４０１は、静電吸着電極４０２を有し、この静電吸着電極４０２の表面に凸部４０３を有する。この凸部４０３は、移載対象となる電子部品（例えば水晶振動子１０）の外部接続電極が設けられている面の外部接続電極以外の部分に対応して設けられ、外部接続電極以外の部分に接触して静電吸着電極４０１の表面の凸部４０３以外の部分と移載対象となる電子部品の外部接続電極とを接触させずに対向させて、例えば距離ｄに維持する。 FIG. 13 is a diagram illustrating another configuration example of the electrostatic attraction pin. The electrostatic attraction pin 401 has an electrostatic attraction electrode 402, and has a convex portion 403 on the surface of the electrostatic attraction electrode 402. The convex portion 403 is provided corresponding to a portion other than the external connection electrode on the surface on which the external connection electrode of the electronic component (for example, the crystal resonator 10) to be transferred is provided, and is a portion other than the external connection electrode. The portion other than the convex portion 403 on the surface of the electrostatic chucking electrode 401 and the external connection electrode of the electronic component to be transferred are opposed to each other without being in contact with each other, and maintained at a distance d, for example.

静電吸着ピン４０１の凸部４０３を、素子容器１２の電極パッド１３，１４，１５，１６以外の部分に接触させることで、凸部の周囲の部分と電極パッド１３，１４，１５，１６との距離をｄに維持し、それらの間のクーロン力により、水晶振動子１０を吸着することができる。 By bringing the convex portion 403 of the electrostatic attraction pin 401 into contact with a portion other than the electrode pads 13, 14, 15, 16 of the element container 12, the portion around the convex portion and the electrode pads 13, 14, 15, 16 are Is maintained at d, and the crystal unit 10 can be adsorbed by the Coulomb force between them.

図１４は、図１３に示す静電吸着ピン４０１の先端の構成の一例を示す斜視図である。この例では、円筒形の静電吸着電極４０２ａの先端に、十字形凸部４０３ａが設けられている。例えば図６の水晶振動子１０の素子容器１２に対して、十字形凸部４０３ａを、電極パッド１３，１４，１５，１６に接しないように接触させる。これにより、静電吸着電極４０２ａの先端の十字形凸部４０３ａで分割された４つの部分でそれぞれ、電極パッド１３，１４，１５，１６を静電吸着することができる。 FIG. 14 is a perspective view showing an example of the configuration of the tip of the electrostatic attraction pin 401 shown in FIG. In this example, a cross-shaped convex portion 403a is provided at the tip of a cylindrical electrostatic adsorption electrode 402a. For example, the cross-shaped convex portion 403a is brought into contact with the element container 12 of the crystal resonator 10 of FIG. 6 so as not to contact the electrode pads 13, 14, 15, and 16. Thereby, the electrode pads 13, 14, 15, and 16 can be electrostatically adsorbed by the four portions divided by the cross-shaped convex portion 403a at the tip of the electrostatic adsorption electrode 402a, respectively.

図１５は、図１３に示す静電吸着ピン４０１の先端の構成の別の例を示す斜視図である。この例では、四角柱状の静電吸着電極４０２ｂの先端に、十字形凸部４０３ｂが設けられている。静電吸着電極４０２ｂの先端の四角形状は、移載対象となる電子部品の形状に対応している。例えば図５の水晶振動子１０に対して、静電吸着電極４０２ｂの先端の四角形状と素子容器１２の四角形状とを対応させて、十字形凸部４０３ｂを素子容器１２に接触させる。これにより、静電吸着電極４０２ｂを電極パッド１３，１４，１５，１６に接触させることなく、静電吸着電極４０２ｂの先端の十字形凸部６３ｂで分割された４つの部分でそれぞれ、電極パッド１３，１４，１５，１６を静電吸着することができる。このような構成とすることにより、被移載物との接触部が金属にできるため長寿命にでき、吸着電極が被移載物と接触しないため、表面汚染を防止し、磨耗等による吸着力低下を防ぐことができる。 FIG. 15 is a perspective view showing another example of the configuration of the tip of the electrostatic attraction pin 401 shown in FIG. In this example, a cross-shaped convex portion 403b is provided at the tip of a quadrangular columnar electrostatic chucking electrode 402b. The square shape at the tip of the electrostatic adsorption electrode 402b corresponds to the shape of the electronic component to be transferred. For example, with respect to the crystal unit 10 of FIG. 5, the square shape of the tip of the electrostatic chucking electrode 402 b and the square shape of the element container 12 are made to correspond to each other, and the cross-shaped convex portion 403 b is brought into contact with the element container 12. Thus, the electrode pad 13 is divided into four portions divided by the cross-shaped convex portion 63b at the tip of the electrostatic adsorption electrode 402b without bringing the electrostatic adsorption electrode 402b into contact with the electrode pads 13, 14, 15, and 16, respectively. , 14, 15 and 16 can be electrostatically adsorbed. By adopting such a configuration, the contact portion with the transferred object can be made of metal, so that the service life can be extended, and the adsorption electrode does not contact with the transferred object, so that surface contamination is prevented and the adsorption force due to wear or the like is prevented. Decline can be prevented.

ここでは、電極パッドが４つの電子部品を吸着するものとして、十字形の凸部を示したが、移載対象の電子部品の電極パッドの形状や個数によって、凸部の形状を任意に設計することができる。例えば、音叉形の水晶振動子のように素子が細長く、その両端に電極が設けられている場合には、中央に一つの凸部を設け、その両側で電極を静電吸着することができる。図１３ないし図１５では凸部４０３を設け、静電吸着電極と電極パッド間を距離ｄの空間としているが、例えば静電吸着電極４０２に誘電膜を形成し、距離ｄの空間内の一部を誘電体材料で満たしてもよい。 Here, a cross-shaped convex portion is shown as an electrode pad that adsorbs four electronic components, but the shape of the convex portion is arbitrarily designed according to the shape and number of electrode pads of the electronic component to be transferred. be able to. For example, in the case where the element is elongated and electrodes are provided at both ends thereof, such as a tuning-fork type crystal resonator, one convex portion can be provided at the center and the electrodes can be electrostatically adsorbed on both sides thereof. In FIG. 13 to FIG. 15, the convex portion 403 is provided and the space between the electrostatic adsorption electrode and the electrode pad is a distance d. For example, a dielectric film is formed on the electrostatic adsorption electrode 402 and a part of the space within the distance d is formed. May be filled with a dielectric material.

図１６は、図１２に示したものとは別の封止処理部６の構成例を示す。この構成例では、封止トレー６０１上に、電子回路素子としての水晶片１１が収容された状態の素子容器１２を下に、リッド１２ａを上に配置し、ローラー電極６０２により真空シーム溶接封止を行う。 FIG. 16 shows a configuration example of the sealing processing unit 6 different from that shown in FIG. In this configuration example, on the sealing tray 601, the element container 12 in a state where the crystal piece 11 as an electronic circuit element is accommodated is placed on the bottom, the lid 12a is placed on the top, and the vacuum seam welding sealing is performed by the roller electrode 602. I do.

ただし、従来の真空シーム溶接封止では、素子の小型低背、狭小ピッチ化に限界がある。例えば水晶振動子は、パッケージ厚さが０．３ｍｍ以下となり、封止トレー６０１のワークポケット深さを０．１ｍｍ以下しかとれない。一方、シーム溶接では、数Ａないし数十Ａの大電流を流すため、ローラー電極６０２を小型化することができない。そのため、ローラー電極６０２が封止トレー６０１に接触してしまったり、搬送不良が生じたりする。また、ローラー電極６０２の大きさでピッチが制限されてしまい、素子が小型化されても、ピッチを狭くしてトレー搭載数を増やすことができなくなっている。 However, conventional vacuum seam welded sealing has limitations in reducing the size and height of the element and reducing the pitch. For example, a crystal resonator has a package thickness of 0.3 mm or less and a work pocket depth of the sealing tray 601 of only 0.1 mm or less. On the other hand, in seam welding, a large current of several A to several tens of A flows, so that the roller electrode 602 cannot be reduced in size. For this reason, the roller electrode 602 may come into contact with the sealing tray 601 or a conveyance failure may occur. Further, even if the pitch is limited by the size of the roller electrode 602 and the element is downsized, the pitch cannot be narrowed to increase the number of trays.

図１７は、このような従来の真空シーム溶接封止技術を改善した例を示す。この例では、移載機構４，５は、電子回路素子としての水晶片１１が収容された状態の素子容器１２とリッド１２ａとをそれぞれ移載対象とし、静電吸着電極として、素子容器１２用の第１の静電吸着電極４１１と、リッド１２ａ用の第２の静電吸着電極４１２とを用いる。封止処理部６は、第１の静電吸着電極４１１により吸着されている状態の素子容器１２と、第２の静電吸着電極４１２により吸着されている状態のリッド１２ａとを、互いに対向させ、第１の静電吸着電極４１１を台座として、ローラー電極６０２によりシーム溶接封止する。このとき、素子容器１２とリッド１２ａとは、１組ずつ、または列毎に処理される。 FIG. 17 shows an example in which such a conventional vacuum seam weld sealing technique is improved. In this example, the transfer mechanisms 4 and 5 use the element container 12 and the lid 12a in a state in which the crystal piece 11 as an electronic circuit element is accommodated, respectively, and serve as an electrostatic adsorption electrode for the element container 12. The first electrostatic chucking electrode 411 and the second electrostatic chucking electrode 412 for the lid 12a are used. The sealing processing unit 6 causes the element container 12 that is attracted by the first electrostatic attracting electrode 411 and the lid 12a that is attracted by the second electrostatic attracting electrode 412 to face each other. The first electrostatic adsorption electrode 411 is used as a pedestal, and seam welding sealing is performed by the roller electrode 602. At this time, the element container 12 and the lid 12a are processed one by one or for each column.

この構成によれば、ローラー電極６０２が大きくても、封止トレーに誤って接触することがなく、ローラー電極６０２によるトレーのピッチやワークポケット深さの制限が解消される。 According to this configuration, even if the roller electrode 602 is large, there is no accidental contact with the sealed tray, and restrictions on the tray pitch and work pocket depth due to the roller electrode 602 are eliminated.

本発明により、周波数調整工程から封止工程への水晶振動子移載を真空雰囲気下で実施することが可能となるため、封止工程前の水晶振動子に水分や塵埃等のパーティクルが付着することを防止し、封止後の周波数ばらつきを低減させることができる。また、周波数調整工程後の電極を大気に曝すことなく封止することができるため、電極の酸化を防止することも可能となる。また、アニール処理後の蓋を大気に曝すことなく封止装置に搬入することができるため、更なる周波数のばらつき低減に貢献する。封止工程では十分なガス抜きを実施することが重要であるが、水分吸着のない水晶振動子容器及び蓋を封止することができるため、ガス抜きのための予備加熱アニール時間を短縮することも可能となる。封止後の周波数シフトを抑止し、良品率を向上させることができるため、歩留まりを改善することができる。 According to the present invention, since it is possible to transfer the crystal unit from the frequency adjustment step to the sealing step in a vacuum atmosphere, particles such as moisture and dust adhere to the crystal unit before the sealing step. This can be prevented and frequency variation after sealing can be reduced. In addition, since the electrode after the frequency adjustment step can be sealed without being exposed to the atmosphere, the electrode can be prevented from being oxidized. Moreover, since the lid after the annealing treatment can be carried into the sealing device without being exposed to the atmosphere, it contributes to further reduction in frequency variation. Although it is important to perform sufficient degassing in the sealing process, it is possible to seal the crystal unit container and the lid without moisture adsorption, so that the preheating annealing time for degassing is shortened. Is also possible. Since the frequency shift after sealing can be suppressed and the yield rate can be improved, the yield can be improved.

以上の説明では水晶振動子の製造を例に説明したが、本発明は、回路素子が収容された素子容器に真空雰囲気下で蓋を装着して真空封止型の電子部品とする封止工程を含むどのような電子部品の製造にも利用することができる。その場合、封止工程に先立つ処理工程では、対象となる電子回路素子、素子容器および蓋の少なくともひとつに対して、その対象物に応じた処理を実行する。そして、その処理工程の後に、本発明における移載工程により、対象となる電子回路素子、素子容器および蓋を封止工程が行われる場所に移載する。移載工程では、電子回路素子、素子容器および蓋の少なくともひとつの電子部品構成要素について、その電子部品構成要素の金属部分などの導電部分に、静電吸着電極をその電極の導体部分が導電部分に接することのない状態で近接させ、静電吸着電極に電圧を印加することで、その電子部品構成要素を静電吸着することができる。 In the above description, the manufacture of the crystal resonator has been described as an example. However, the present invention provides a sealing process in which a lid is attached to a device container in which circuit elements are housed in a vacuum atmosphere to form a vacuum sealed electronic component. Can be used to manufacture any electronic component including In that case, in the processing step prior to the sealing step, processing corresponding to the target object is executed on at least one of the target electronic circuit element, element container, and lid. Then, after the processing step, the target electronic circuit element, the element container, and the lid are transferred to the place where the sealing step is performed by the transfer step in the present invention. In the transfer process, for at least one electronic component component of the electronic circuit element, the element container, and the lid, the electrostatic adsorption electrode is disposed on a conductive portion such as a metal portion of the electronic component component, and the conductive portion of the electrode is a conductive portion. The electronic component components can be electrostatically adsorbed by making them close to each other without being in contact with the electrode and applying a voltage to the electrostatic adsorption electrode.

１真空装置
２周波数調整処理部
２１周波数調整トレー
２２イオンガン
２３シャッター
３加熱処理部
４，５移載機構
４０マニピュレータ
４１，４２，５１，４０１，４１１，４１２静電吸着ピン
４３，４４４０２，４０２ａ，４０２ｂ静電吸着電極
４５，４６誘電体膜
４７，４８直流電源
４０３，４０３ａ，４０３ｂ凸部
６封止処理部
６１封止トレー
６２，６３加熱ブロック
６０２ローラー電極
７搬送機構
８制御部
１０水晶振動子
１１水晶片
１２素子容器
１２ａリッド（蓋）
１３，１４，１５，１６電極パッド（外部接続電極）
１７，１８励振電極 DESCRIPTION OF SYMBOLS 1 Vacuum apparatus 2 Frequency adjustment process part 21 Frequency adjustment tray 22 Ion gun 23 Shutter 3 Heat processing part 4,5 Transfer mechanism 40 Manipulator 41, 42, 51, 401, 411, 412 Electrostatic adsorption pin 43, 44402, 402a, 402b Electrostatic attracting electrode 45, 46 Dielectric film 47, 48 DC power supply 403, 403a, 403b Convex part 6 Sealing process part 61 Sealing tray 62, 63 Heating block 602 Roller electrode 7 Conveying mechanism 8 Control part 10 Crystal oscillator 11 Crystal fragment 12 Element container 12a Lid (lid)
13, 14, 15, 16 Electrode pad (external connection electrode)
17, 18 Excitation electrode

Claims

In a method for manufacturing an electronic component including a sealing step in which a lid is attached to a device container containing an electronic circuit device in a vacuum atmosphere to form a vacuum-sealed electronic component,
Prior to the sealing step, a processing step of executing processing for at least one of the electronic circuit element, the element container, and the lid;
After this processing step, including a transfer step of transferring the electronic circuit element, the element container and the lid to a place where the sealing step is performed,
In the transfer step, for at least one electronic component component of the electronic circuit element, the element container, and the lid, an electrostatic adsorption electrode is disposed on a conductive portion of the electronic component component, and a conductive portion of the electrode is electrically conductive. An electronic component manufacturing method comprising: an electrostatic adsorption step in which the electronic component components are electrostatically adsorbed by applying a voltage to the electrostatic adsorption electrode by bringing them close to each other without contacting the portion .

In the manufacturing method of the electronic component of Claim 1,
External connection electrodes that are electrically connected to the electronic circuit elements housed inside are provided outside the element container,
In the transfer step, the element container in a state where the electronic circuit element is accommodated is to be transferred,
In the electrostatic adsorption step, the electrostatic adsorption electrode is brought close to the surface of the external connection electrode, and a voltage is applied between the external connection electrode and the electrostatic adsorption electrode to electrostatically adsorb the element container. A method for manufacturing an electronic component, characterized in that:

In the manufacturing method of the electronic component of Claim 2,
The element container has, as the external connection electrode, a ground or floating electrode in addition to two electrodes connected to the electronic circuit element in the element container,
In the electrostatic chucking step, the electrostatic chucking electrode is brought close to the surface of at least the ground or the floating electrode to electrostatically chuck the electronic component.

In the manufacturing method of the electronic component of Claim 2 or 3,
In the electrostatic adsorption step, an electrostatic adsorption pin having a dielectric film provided on the surface of the electrostatic adsorption electrode is used, the dielectric film is brought into contact with the external connection electrode, and the electrostatic adsorption electrode and the A method for manufacturing an electronic component, comprising: adsorbing the device container by a Coulomb force, a Johnson Rabeck force, or a gradient force between the external connection electrodes.

In the manufacturing method of the electronic component of Claim 2 or 3,
In the electrostatic adsorption step, on the surface of the electrostatic adsorption electrode, corresponding to the external connection electrode of the element container to be transferred, other than the external connection electrode on the surface provided with the external connection electrode Using an electrostatic attraction pin provided with a convex portion for contacting the portion, the convex portion is brought into contact with a portion of the element container where the external connection electrode is not provided, and a portion around the convex portion The device container is adsorbed by a Coulomb force between the external connection electrode and the external connection electrode.

In the manufacturing method of the electronic component of Claim 4,
The device container to be transferred has a substantially rectangular shape, and is disposed on one outer surface of the device container as the external connection electrode at one diagonal of the rectangular shape and is an internal electronic circuit device. Two electrodes connected to each other, and two ground or floating electrodes arranged on the other diagonal of the rectangular shape,
In the electrostatic adsorption step, two electrostatic adsorption pins are used, and each dielectric film is brought into contact with the two grounds or floating electrodes to electrostatically adsorb.

In the manufacturing method of the electronic component of Claim 5,
The device container to be transferred has a substantially rectangular shape, and is arranged on one outer surface of the device container as the external connection electrode on one diagonal of the rectangular shape to the internal electronic circuit device. Two connected electrodes and two ground or floating electrodes arranged at other diagonals of the rectangular shape,
In the electrostatic chucking step, the convex portions are cross-shaped as the electrostatic chuck pins, and the two electrodes and the two grounds or floating electrodes are divided into four parts divided by the cross. A method for producing an electronic component, characterized in that electrostatic adsorption is performed.

In the manufacturing method of the electronic component of any one of Claim 2 to 7,
The electronic circuit element is a crystal piece fixed in the element container to constitute a crystal resonator,
The said process process includes the frequency adjustment process of implementing frequency adjustment with respect to the said quartz piece fixed in the said element container. The manufacturing method of the electronic component characterized by the above-mentioned.

In the transfer method of the electronic component of any one of Claim 2 to 8,
In the transfer step, the element container in which the electronic circuit element is accommodated is transferred from a processing tray used in the processing step to a sealing tray used in the sealing step. To transfer electronic parts.

In the manufacturing method of the electronic component of Claim 1,
The lid is made of metal;
The treatment step includes a step of heat-treating and degassing the lid,
In the transfer step, the lid is transferred to the work site of the sealing step as a transfer target,
In the electrostatic adsorption step, the electrostatic adsorption pin having a dielectric film provided on the surface of the electrostatic adsorption electrode is used, the dielectric film is brought into contact with the lid, and the lid is adsorbed. Manufacturing method for electronic parts.

In the manufacturing method of the electronic component of Claim 10,
In the transfer step, a plurality of the lids are arranged side by side on the sealing tray used in the sealing step, and the lid corresponding to the defective one of the electronic circuit elements is removed from the sealing tray. An electronic component manufacturing method characterized by the above.

In the manufacturing method of the electronic component of Claim 1,
In the transfer step, the element container and the lid in a state in which the electronic circuit element is accommodated are set as transfer targets,
In the electrostatic adsorption step, a first electrostatic adsorption electrode for the element container and a second electrostatic adsorption electrode for the lid are used as the electrostatic adsorption electrode.
In the sealing step, the element container in a state of being adsorbed by the first electrostatic adsorption electrode and the lid in a state of being adsorbed by the second electrostatic adsorption electrode are opposed to each other. A method for producing an electronic component, wherein the first electrostatic adsorption electrode is used as a pedestal and seam welding is sealed with a roller electrode.

The method of manufacturing an electronic component according to claim 12,
In the sealing step, the device container and the lid are processed one by one or for each row.

An electronic circuit element, an element container that accommodates the electronic circuit element, and a pre-sealing processing unit that performs processing on at least one of the lids that seal the element container in a state where the electronic circuit element is accommodated;
A sealing processing unit that attaches the lid to the element container in a state in which the electronic circuit element is accommodated to form a vacuum-sealed electronic component;
A transfer mechanism that transfers the electronic circuit, the element container, and the lid that have been processed by the pre-sealing processing unit to the sealing processing unit;
The transfer mechanism includes an electrostatic adsorption electrode and a manipulator that operates the electrostatic adsorption electrode.
The manipulator is configured such that at least one electronic component component of the electronic circuit element, the element container, and the lid, the electrostatic adsorption electrode is disposed on a conductive portion of the electronic component component, and the conductive portion of the electrode is the conductive portion. An electronic component manufacturing apparatus characterized in that the electronic component components are electrostatically attracted by being brought close to each other without being in contact with the electrode and applying a voltage to the electrostatic adsorption electrode.

The apparatus for manufacturing an electronic component according to claim 14,
The electrostatic adsorption electrode is provided with a dielectric film for contacting a surface of a conductive portion of an electronic component component to be transferred on the surface of the electrostatic adsorption electrode.

The apparatus for manufacturing an electronic component according to claim 14,
The electrostatic attraction electrode is in contact with a portion other than the conductive portion corresponding to a portion other than the conductive portion of a surface on which a conductive portion of an electronic component component to be transferred is provided. And a projecting portion for maintaining the other portion of the surface and the conductive portion of the electronic component component facing each other without contacting each other.

The apparatus for manufacturing an electronic component according to claim 16,
The electronic component component to be transferred is an element container,
This element container is substantially rectangular, and on one outer surface, two electrodes arranged on one diagonal of the rectangle and connected to an internal electronic circuit element, and the other of the rectangle Having two ground or floating electrodes arranged diagonally,
The convex part of the electrostatic adsorption electrode is provided in a cross shape corresponding to the shape between the two electrodes and the two grounds or floating electrodes.

The electronic component manufacturing apparatus according to any one of claims 14 to 17,
The electronic circuit element is a crystal piece fixed in the element container to constitute a crystal resonator,
The said sealing pre-processing part contains the frequency adjustment process part which performs frequency adjustment with respect to the said crystal piece fixed in the said element container. The manufacturing apparatus of the electronic component characterized by the above-mentioned.

The electronic component manufacturing apparatus according to any one of claims 14 to 18,
The transfer mechanism transfers the element container in a state where the electronic circuit element is accommodated from a processing tray used in the pre-sealing processing unit to a sealing tray used in the sealing processing unit. An electronic component manufacturing apparatus characterized by being controlled as described above.

The apparatus for manufacturing an electronic component according to claim 14,
The lid is made of metal;
The pre-sealing treatment unit includes a heat treatment unit that heats and degass the lid,
The electrostatic adsorption electrode is provided with a dielectric film for contacting the surface of the lid on the surface,
The transfer mechanism is controlled so that the lid is a transfer target, and the dielectric film is brought into contact with the lid to adsorb the lid.

The electronic component manufacturing apparatus according to claim 20, wherein
The transfer mechanism arranges a plurality of the lids on the sealing tray used in the sealing step, and removes the lid corresponding to the defective one of the electronic circuit elements from the sealing tray. An electronic component manufacturing apparatus characterized by being controlled as described above.

The apparatus for manufacturing an electronic component according to claim 14,
The transfer mechanism is configured to transfer the element container and the lid in a state where the electronic circuit element is accommodated, respectively, and as the electrostatic adsorption electrode, a first electrostatic adsorption electrode for the element container and A second electrostatic adsorption electrode for the lid,
The sealing processing unit causes the element container in a state of being attracted by the first electrostatic adsorption electrode and the lid in a state of being attracted by the second electrostatic adsorption electrode to face each other. An apparatus for manufacturing an electronic component, comprising: a roller electrode for seam welding sealing using the first electrostatic adsorption electrode as a pedestal.

The electronic component manufacturing apparatus according to claim 22,
The said sealing process part processes the said element container and the said lid | cover one by one or for every row | line. The manufacturing method of the electronic component characterized by the above-mentioned.