JP2006073679A - Manufacturing method and apparatus of electronic component sealing structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic component sealing structure capable of being sealed in a high vacuum state by preventing gas from being encapsulated into the electronic component sealing structure. <P>SOLUTION: The manufacturing method of an electronic component sealing structure comprises steps of accommodating a quartz oscillator in a container (step S1); disposing a cover on the opening peripheral edge of the container and tentatively fixing them (step S2); thereafter irradiating the region of the cover excepting the predetermined region of the outer periphery of the cover with an electron beam and forming a non-welded portion in the predetermined region (primary welding process step S3); thereafter heating a package at a predetermined temperature and annealing it (annealing process step S4), and further cooling the same to a predetermined temperature (cooling process step S5); and irradiating the non-welded portion with a laser beam to completely seal the package (secondary welding process step S6). <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electronic component sealing body in which a container is hermetically sealed with a lid after storing electronic components such as a crystal resonator, a piezoelectric element such as a piezoelectric resonator and a piezoelectric oscillator, and an IC chip in the container. The present invention relates to a manufacturing method and a manufacturing apparatus.

  An electronic component sealing body is an electronic component such as a crystal resonator that is housed in an airtight state inside a package composed of a container made of ceramics and the like and a lid that seals the opening of the container. Composed.

  Conventionally, seam welding has been used as a sealing method for an electronic component sealing body, but seam welding is expensive, and if this method is applied, the electronic component sealing body is sufficiently miniaturized. Difficult to do. There is also a vacuum furnace welder that welds the lid to the container by heating the container in a vacuum to melt the sealing material. Since welding is performed all around the outer periphery at once, there is a problem that outgas generated from the sealing material during welding is confined inside the package and the degree of vacuum deteriorates. For this reason, sealing by beam welding using an electron beam, a laser beam, or the like is performed instead of a method such as seam welding.

  In welding by such a beam, a sealing material such as a metal brazing material is disposed between the container and the lid disposed on the upper surface of the container so as to seal the container opening. Then, for example, the sealing material is melted by irradiating a beam from the lid side. Thereby, the container and the lid are welded by the sealing material, and the electronic component sealing body in which the electronic component is stored is sealed.

  By the way, in the container of the electronic component sealing body made of ceramics or the like, impurities (volatile components) or moisture in the atmosphere adhere to the container surface or the like, and these impurities are irradiated by the beam to the container in the sealing process. And volatilizes when heated. When the gas due to volatilization is enclosed in the electronic component sealing body, the degree of vacuum inside the electronic component sealing body may be deteriorated to deteriorate the characteristics of the electronic component. For example, in an electronic component encapsulant configured to accommodate a crystal resonator, an equivalent series resistance value (CI value) of the crystal resonator is increased due to a volatile component generated during welding. Oscillation characteristics deteriorate.

  Therefore, as a method for removing volatile components attached to the container surface and the like, a method of preheating the container, the sealing material, and each member of the lid in advance before the sealing step, that is, the preheating step (For example, refer to Patent Document 1). By providing such a preheating step, members such as a container, a sealing material, and a lid are heated in advance before the sealing step to volatilize and remove volatile components. It becomes possible to suppress. Hereinafter, such removal of volatile components by heating in a vacuum atmosphere is referred to as annealing treatment.

JP 2000-223604 A

  Even if the volatile components adhering to the components of the electronic component encapsulant are removed by the annealing treatment as described above, the type and amount of volatile components that can be volatilized are the heating temperature of the annealing treatment. Therefore, it is difficult to sufficiently remove the volatile component, and the volatile component remaining without being removed is present in the sealed electronic component. The residual volatile component is volatilized when heated at a high temperature in a process (for example, a sealing process) after the preliminary heating process, and is sealed as a gas in the package of the electronic component sealing body. As a result, although the annealing process is performed, the residual volatile components that are not removed by the annealing process cause deterioration of the characteristics of the electronic component sealing body.

  In order to solve the above-described problems in the prior art, the present invention provides a method and a manufacturing method for an electronic component encapsulant that can be sealed in a high vacuum state by preventing gas from being enclosed inside the electronic component encapsulant An object is to provide an apparatus.

  In order to solve the above-mentioned problems and achieve the object, a manufacturing method of an electronic component sealing body according to the invention of claim 1 includes a container having an opening and an electronic component being accommodated in an internal accommodating portion through the opening. A lid that is bonded to the periphery of the opening and covers the opening of the container, and is sealed by melting a sealing material disposed at a bonding portion between the container and the lid An annealing process for heating a non-encapsulated electronic component encapsulant in which a communication part between the container and the outside of the container is formed at least in part by a manufacturing method of a component encapsulant A cooling step for cooling the unsealed electronic component sealing body after the annealing step, and beam-welding the communication portion of the unsealed electronic component sealing body after the cooling step to completely seal A communication part beam welding process to be stopped.

  According to such a configuration, since the cooling step is provided in advance before the communicating portion beam welding step, it is possible to suppress the electronic component sealing body from becoming higher than the heating temperature in the annealing step in the communicating portion beam welding step. It becomes. Therefore, it is possible to suppress volatile components that have not been removed in the annealing step from volatilizing in the communicating portion beam welding step, and the gas derived from the volatile components can be sealed inside the electronic component sealing body. It becomes possible to prevent. Therefore, it is possible to prevent the electronic components housed inside from being deteriorated in characteristics and reliability due to the sealed gas.

  According to a second aspect of the present invention, there is provided a method for manufacturing an electronic component encapsulant according to the first aspect of the present invention, wherein, in the annealing step, the temperature is lower than a melting temperature of the encapsulant at the joint and the communication is performed. The unsealed electronic component sealing body is heated to a temperature equal to or higher than a processing temperature in the processing of the electronic component sealing body after the partial beam welding process.

  According to such a configuration, it becomes possible to prevent the sealing material at the communication part from melting in the annealing process, and the processing after the communication part beam welding process, for example, the electronic component sealing body is printed circuit board. It is possible to suppress volatilization of volatile components that have not been removed in the annealing process during processing in the reflow process that is mounted on, etc., and thus gas derived from the volatile components is generated in the electronic component sealing body. Can be prevented.

  According to a third aspect of the present invention, there is provided a method for manufacturing an electronic component sealing body according to the first or second aspect of the invention, wherein, in the cooling step, the unsealed electronic component sealing in the communicating portion beam welding step is performed. The unsealed electronic component sealing body is cooled so that the temperature of the stationary body as a whole is equal to or lower than the temperature of the unsealed electronic component sealing body in the annealing step.

  According to such a configuration, it is possible to more effectively suppress the electronic component sealing body from becoming higher than the heating temperature in the annealing step in the communicating portion beam welding step. Therefore, it is possible to more effectively suppress volatilization components that have not been removed in the annealing step from volatilizing in the communicating portion welding step.

  Moreover, the manufacturing method of the electronic component sealing body concerning invention of Claim 4 is the invention as described in any one of Claims 1-3, The said annealing process, the said cooling process, and the said connection part beam welding process Then, each process is performed in a vacuum atmosphere.

  According to such a configuration, the gas present inside the electronic component sealing body can be promoted and discharged to the outside, and the inside of the electronic component sealing body can be maintained at a high vacuum. Also, in a vacuum atmosphere, the temperature of the unsealed electronic component encapsulated body heated by the annealing process is hardly lowered by being allowed to cool. Therefore, if the communicating part beam welding process is directly performed after the annealing process, the communicating part beam In the welding process, the electronic component sealing body becomes higher than the annealing temperature. Therefore, the method of the present invention which provides a cooling step and temporarily reduces the temperature of the unsealed electronic component sealing body has an effective effect.

  According to a fifth aspect of the present invention, there is provided a method for manufacturing an electronic component encapsulant according to any one of the first to fourth aspects, wherein a predetermined region of the joint is beam-welded to a region other than the predetermined region The method further includes a communication portion forming step of forming an unwelded portion which is the communication portion in a region of the joint portion.

  According to such a configuration, the gas generated in the communication portion forming process and the gas generated in the annealing process can be discharged to the outside through the unwelded portion. Therefore, the degree of vacuum in the electronic component sealing body can be further increased.

  Moreover, the manufacturing method of the electronic component sealing body concerning invention of Claim 6 WHEREIN: In the invention as described in any one of Claims 1-4, the said container has a through-hole as said communication part previously, A through-hole sealing material loading step of loading a through-hole sealing material into the through-hole is further included before or after the annealing step, and in the communicating portion beam welding step, the through-hole sealing material is irradiated with a beam and melted The through hole is filled and sealed with the through hole sealing material.

  Moreover, the manufacturing method of the electronic component sealing body concerning invention of Claim 7 WHEREIN: In the invention as described in any one of Claims 1-4, the said container has a through-hole as said communicating part previously, A through-hole sealing material loading step of loading a through-hole sealing material into the through-hole is further included before or after the cooling step, and in the communication portion beam welding step, the through-hole sealing material is irradiated with a beam and melted The through hole is filled and sealed with the through hole sealing material.

  An electronic component sealing body manufacturing method according to the invention of claim 8 is characterized in that, in the invention of claim 6 or 7, the through hole sealing material is substantially spherical.

  According to such a configuration, it is possible to discharge gas generated in the annealing process through the through hole of the container. Therefore, the degree of vacuum in the electronic component sealing body can be further increased.

  According to a ninth aspect of the present invention, there is provided an electronic component encapsulant manufacturing apparatus including an opening having a container in which an electronic component is housed in an inner housing through the opening, and being joined to a peripheral edge of the opening. An electronic component sealed body manufacturing apparatus that is sealed by melting a sealing material disposed at a joint portion between the container and the lid body. An unsealed electronic component sealing body having at least a part of the communication portion between the housing portion and the outside is supplied, and annealing means for heating and annealing the unsealed electronic component sealing body Cooling means for cooling the unsealed electronic component sealing body treated by the annealing means, and beam-communication of the communication portion of the unsealed electronic component sealing body cooled by the cooling means. And a beam welding means for communicating that completely seals. .

  According to such a configuration, it becomes possible to process the unsealed electronic component sealing body that has been cooled by the cooling means in advance by the communicating portion beam welding means. Therefore, in the processing by the communicating portion beam welding means, the electronic component sealing is performed. It is possible to suppress the stop from becoming higher than the heating temperature by the annealing means. Therefore, it becomes possible to suppress volatilization components that have not been removed by the treatment by the annealing means from being volatilized in the treatment by the communicating portion beam welding means, and the gas derived from the volatile components is enclosed inside the electronic component sealing body. Can be prevented. Therefore, it is possible to prevent the electronic components housed inside from being deteriorated in characteristics and reliability due to the sealed gas.

  According to a tenth aspect of the present invention, there is provided the electronic device encapsulant manufacturing apparatus according to the ninth aspect, wherein the annealing means, the cooling means, and the communicating portion beam welding means are provided in one vacuum processing chamber. It is provided.

  In such a configuration, it is possible to perform each process by the annealing means, the cooling means, and the communicating portion beam welding means in a state where the inside of the vacuum processing chamber is kept in a vacuum. Therefore, the gas present inside the electronic component sealing body can be promoted and discharged to the vacuum processing chamber, and the inside of the electronic component sealing body can be maintained at a high vacuum.

  An electronic component sealing body manufacturing apparatus according to an invention of claim 11 is the invention according to claim 9 or 10, wherein the holding means on which a plurality of the unsealed electronic component sealing bodies are mounted includes The annealing means, the cooling means, and the communicating portion beam welding means are sequentially supplied.

  According to such a configuration, each treatment can be efficiently performed on a plurality of unsealed electronic component sealed bodies in the annealing means, the cooling means, and the communicating portion beam welding means. Therefore, it becomes possible to manufacture the electronic component sealing body with good manufacturing efficiency.

  Moreover, the manufacturing apparatus of the electronic component sealing body according to the invention of claim 12 is the invention according to any one of claims 9 to 11, wherein the annealing means is the unsealed electronic component sealing body. And a heating member that directly contacts at least one of the surface of the holding means and the cooling means directly contacts at least one of the surface of the unsealed electronic component sealing body and the surface of the holding means. It has the cooling member to perform.

  According to such a configuration, the heating member and the cooling member are in direct contact with at least one of the surface of the unsealed electronic component sealing body and the surface of the holding member for heating and cooling. Even in the state of being held in the heat, it is possible to efficiently perform the heating by the annealing means and the cooling by the cooling means.

  According to a thirteenth aspect of the present invention, there is provided an electronic component encapsulant manufacturing apparatus according to the twelfth aspect of the present invention, wherein the annealing means includes a plurality of the unsealed electronic component seals mounted on the holding means. It further has a pressing member that presses each of the stationary bodies and makes contact with the heating member.

  According to a fourteenth aspect of the present invention, there is provided the electronic device encapsulant manufacturing apparatus according to the twelfth aspect of the invention, wherein the cooling means includes a plurality of the unsealed electronic component seals mounted on the holding means. It further has a pressing member that presses each of the stationary bodies and makes contact with the cooling member.

  According to these configurations, each of the plurality of unsealed electronic component sealing bodies mounted on the holding unit can be reliably brought into contact with the heating member or the cooling member by the pressing member. Here, in a state where the vacuum processing chamber is held in a vacuum, the heating state or the cooling state is greatly influenced by whether or not the unsealed electronic component sealing body comes into contact with the heating member or the cooling member. Therefore, it is possible to more efficiently perform the heating by the annealing unit and the cooling by the cooling unit by realizing a configuration in which the contact is made surely.

  In particular, in such a configuration, even if there is a variation in thickness among a plurality of unsealed electronic component sealing bodies mounted on the holding means, all the electronic component sealing bodies are reliably heated or cooled. It can be brought into contact with the member. Therefore, it is possible to suppress variations in the heating state or cooling state between the plurality of unsealed electronic component sealing bodies, and it is possible to perform heating or cooling uniformly.

  An apparatus for manufacturing an electronic component encapsulant according to the invention of claim 15 is the invention according to any one of claims 11 to 14, wherein the holding means is disposed on a surface and the holding means is rotated. Rotating and conveying means for sequentially supplying the heat to the annealing means, the cooling means and the communicating part beam welding means.

  An electronic component encapsulant manufacturing apparatus according to a sixteenth aspect of the present invention is the electronic component sealing body according to any one of the eleventh to fifteenth aspects, further comprising a transport path communicating with the vacuum processing chamber. The holding means disposed in the rotary conveyance means of the vacuum processing chamber after being carried in from the conveyance path is sequentially supplied to the annealing means, the cooling means, and the communicating portion beam welding means, and then again. The transfer path is moved in the direction opposite to that at the time of loading and is carried out of the apparatus.

  According to these configurations, the apparatus can be reduced in size. In addition, since the same conveyance path can be used at the time of carry-in and carry-out, the number of parts constituting the apparatus can be reduced, so that the cost can be reduced.

  An electronic component sealing body manufacturing apparatus according to the invention of claim 17 further includes a vacuum preliminary chamber communicating with the vacuum processing chamber in the invention of any one of claims 9 to 16. It is characterized by.

  According to such a configuration, the electronic component sealing body can be carried into and out of the vacuum processing chamber after the vacuum state is realized in advance using the vacuum preliminary chamber when the electronic component sealing body is carried in and out. It becomes possible. Therefore, the vacuum state of the vacuum processing chamber can be maintained.

  According to the method and apparatus for manufacturing an electronic component encapsulant according to the present invention, gas generated by volatilization of volatile components attached to a container, a sealing material, a lid, and the like constituting a package of the electronic component encapsulant Can be prevented from being enclosed in the package. Furthermore, it becomes possible to efficiently discharge the volatile components contained in the sealing material, which are generated when the sealing material is melted, to the outside. Therefore, it is possible to improve the degree of vacuum inside the package of the electronic component sealing body, and as a result, deterioration of characteristics and reliability of the electronic component housed in the package is prevented.

  Exemplary embodiments of a method and apparatus for manufacturing an electronic component encapsulant according to the present invention will be described below in detail with reference to the accompanying drawings. Here, as an electronic component sealing body, a crystal resonator sealing body in which a crystal resonator device as an electronic component is housed and sealed in a container is illustrated, and in particular, a crystal resonator is surface-mounted. explain. In the following description, the crystal unit sealing body is simply referred to as a package.

1. Package Manufacturing Method (Embodiment 1)
FIG. 1 is a flowchart showing an outline of a package manufacturing method according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the configuration of a package manufactured by such a manufacturing method. FIG. 3 is a schematic plan view showing a beam irradiation method in the primary welding step (step S3 in FIG. 1) of the manufacturing method in FIG. FIG. 4 is a schematic plan view showing a beam irradiation method in the secondary welding step (step S6 in FIG. 1) of the manufacturing method in FIG. 3 and 4, the beam irradiation locus is schematically shown by a solid line.

  In the package manufacturing method of the present embodiment shown in FIG. 1, first, as shown in FIG. 2, the crystal resonator 1 is stored in the container 2 (step S1 in FIG. 1). The container 2 is composed of a bottom wall and a side wall disposed along the outer periphery of the bottom wall, and has a rectangular box shape in which an upper portion is opened and a housing portion is formed therein. Examples of the constituent material of the container 2 include ceramics, metals, and resins. Here, the container 2 is made of ceramics. In addition, the dimensions of the container 2 are, here, a long side of 4.1 mm, a short side of 1.5 mm, and a height of 0.8 mm or less. A support base 5 is disposed on the bottom surface of the container 2, and a crystal piece as the crystal unit 1 is disposed on the support base 5 in parallel with the bottom surface of the container 2 via a bonding material 6. Thereby, a configuration in which the crystal unit 1 is housed in the container 2 is realized.

  Here, a tuning fork type crystal resonator having a U-shape is used as the crystal resonator 1. The arrangement direction of the opening end of the tuning fork type crystal resonator 1 is arbitrary. In this case, the U-shaped rising portion is arranged along the long side of the container 2.

  After the crystal resonator 1 is placed and stored in the container 2 as described above, the lid 3 is interposed via the sealing material 4 so as to seal the opening of the container 2 as shown in FIG. And placed on the upper surface of the side wall of the container 2. Then, a roller electrode (not shown) of the resistance welder is pressed from the lid 3 side to the two short-side central portions of the lid 3, whereby the lid 3 is placed in the container 2 at the two short-side central portions. Then, resistance welding is performed and temporary attachment (temporary welding) is performed (step S2 in FIG. 1). In addition, although the short side center part of the cover body 3 is temporarily attached here, you may temporarily attach other parts by pressing.

  As shown in FIG. 2, the lid 3 has a shape in which the outer periphery substantially coincides with the outer periphery of the container 2 in plan view. The lid 3 is made of a metal, and here is made of an iron-based alloy. The sealing material 4 is disposed on the upper surface of the side wall of the container 2, that is, on the periphery of the opening of the container 2, and is interposed between the container 2 and the lid 3. Although mentioned later for details, the sealing material 4 is comprised from a metal brazing.

  Here, although not shown in FIG. 2, a metallized layer made of tungsten is provided on the upper surface of the side wall of the container 2, and a plated layer made of nickel plating or gold plating is further provided on the metallized layer. Yes. The sealing material 4 is provided on this plating layer. In this way, by previously disposing the sealing material 4 on the upper surface of the side wall of the container 2, it is disposed on the container 2 as in the case of conventional beam irradiation in the primary welding process (step S3 in FIG. 1) described later. There is no need to hold the lid 3 with a jig. Here, the sealing material 4 is provided in advance on the upper surface of the side wall of the container 2, but the sealing material 4 may be provided in advance on the lid 3 side.

  After temporarily attaching the lid 3 to the container 2 in this way, as shown in FIG. 3, the electron beam 10 is scanned in a predetermined direction along the periphery of the lid 3 from the lid 3 side to perform beam irradiation. . Thereby, the sealing material 4 of the irradiated portion is melted to weld the lid 3 and the container 2, and an unwelded portion 15 having a width W is formed in the portion not irradiated with the electron beam 10 (FIG. 1 primary welding step S3).

  The unwelded portion 15 corresponds to a communication portion that communicates the space inside the container 2 in which the crystal resonator 1 is stored (that is, the storage portion) and the outside of the container 2. Therefore, here, primary welding process step S3 corresponds to a communication part formation process.

  By forming such an unwelded portion 15, a gas generated along with the irradiation of the electron beam 10 in the primary welding process step S 3, specifically, a gas generated by volatilization of a volatile component contained in the sealing material 4. In addition, the gas generated by volatilization of volatile components (for example, moisture in the atmosphere) attached to the container 2, the lid 3, and the sealing material 4 can be removed from the interior of the package 20 through the opening formed in the unwelded portion 15. It becomes possible to discharge to the outside.

  Here, the irradiation of the electron beam 10 as shown in FIG. 3 in the primary welding step S3 of FIG. 1 is performed using, for example, a normal electron beam processing apparatus. The details of the electron beam processing apparatus are omitted here, but the electron beam processing apparatus includes at least an electron gun that generates the electron beam 10 of FIG. 3 and an object to be processed (here, equivalent to the package 20 of FIG. 3). ) Is disposed inside and a processing chamber in which welding is performed by irradiating the generated electron beam 10 to the object to be processed and a deflector for controlling the path of the electron beam 10 are provided.

  The electron beam 10 of FIG. 3 generated by the electron gun is deflected by a deflector and introduced into the processing chamber. Further, as shown in FIG. 3, the package 20 as the processing object is placed on the periphery from the lid 3 side. The path is controlled by a deflector so that a desired beam trajectory is drawn along the beam path. In processing by such an electron beam processing apparatus, the inside of the apparatus is kept in a vacuum state. The deflector deflects the electron beam by a magnetic field, and is composed of, for example, a coil.

  As shown in FIG. 1, after the primary welding process step S3, the entire package 20 of FIG. 2 is heated at a predetermined temperature for a predetermined time and degassed to perform an annealing process (annealing process step S4). As a result, volatile components adhering to the container 2, the lid 3, the sealing material 4 and the like, which are constituent members of the package 20, are volatilized, and the volatilization is performed. The component-derived gas can be discharged out of the package 20 and removed. Since the annealing process step S4 is performed with the processing chamber in a vacuum state, the discharge of gas from the inside of the package 20 to the processing chamber is naturally promoted. Therefore, the gas can be efficiently discharged to the outside and the inside of the package 20 can be brought into a high vacuum state.

  Here, the heating temperature of the package 20 of FIG. 2 in the annealing step S4 of FIG. 1 (that is, the predetermined temperature) is the heating temperature of the package 20 in the secondary welding step S6 of FIG. The melting point of the sealing material 4 in FIG. 2), and the processing temperature in the subsequent processing step of the package 20 manufactured by the manufacturing method in FIG. 1, for example, a temperature equal to or higher than the processing temperature in the reflow step.

  By setting such a heating temperature, it is possible to prevent the sealing material 4 of the unwelded portion 15 from being melted and sealing the portion in the annealing step S4. Therefore, the gas derived from the volatile component generated in the annealing step S4 can be discharged to the outside of the package 20 through the unwelded portion 15 in FIG. 3, and the gas is prevented from remaining inside the package 20. It becomes possible.

  Moreover, since the heating temperature in the reflow process (not shown) of the package 20 becomes lower than the heating temperature in the annealing process step S4 due to such setting of the heating temperature, it is not removed in the annealing process step S4 in the reflow process. It is possible to suppress the remaining volatile components from volatilizing.

  The reflow process is a package in which the package 20 of FIG. 2 completed through the series of processing steps S1 to S6 of FIG. 1 is attached to a substrate such as a printed wiring board via a bonding material made of brazing material, solder, or the like. 20 surface mounting processes. In the reflow process, the package 20 is heated to the melting point of the bonding material.

  After the annealing step S4, as shown in FIG. 1, the package 20 of FIG. 2 is cooled to a predetermined temperature (cooling step S5). In the cooling step S5, the package 20 is cooled in a vacuum state. Here, the cooling temperature is set so that the temperature of the package 20 in the secondary welding process step S6 of FIG. 1 described later is equal to or lower than the temperature of the package 20 in the annealing process step S4 of FIG. Thereby, as will be described in detail below, it is possible to suppress the remaining volatile components that have not been removed in the annealing process step S4 of FIG. 1 from being volatilized in the secondary welding process step S6.

  As shown in FIG. 4, after the cooling step S <b> 4 in FIG. 1, the unwelded portion 15 of the package 20 is irradiated with a laser beam 40 to melt the sealing material 4 in the portion, thereby completely sealing the package 20. That is, secondary welding is performed (step S6 in FIG. 1). Thus, in the secondary welding process step S6, since the unwelded portion 15 that connects the inside of the package 20 (that is, the accommodating portion of the crystal unit 1 of the container 2 shown in FIG. 2) and the outside is welded, The secondary welding process step S6 corresponds to a communicating part beam welding process. Such secondary welding process step S6 is performed in a vacuum state.

  In the secondary welding process step S6, since the actual width W of the unwelded portion 15 is small and almost the same as the beam diameter of the laser beam 40, the laser beam 40 can be irradiated in a spot shape without scanning. Thus, in the secondary welding process step S6, since the welding region is narrower than in the primary welding process step S3, the amount of gas generated from the sealing material 4 and the like accompanying the welding is small. It is possible to reduce the amount of gas sealed inside.

  Further, in the secondary welding process step S6, the package 20 is heated by the irradiation of the laser beam 40, but as described above in the annealing process step S4 (see FIG. 1), here, before the secondary welding process step S6. Since the package 20 is cooled in advance in the cooling process step S5, even if the temperature of the package 20 is increased by the irradiation of the laser beam 40, the overall temperature of the package 20 is kept below the heating temperature in the annealing process step S4. Is possible.

  More specifically, in the irradiation with the laser beam 40, as shown in FIG. 4, the unwelded portion 15 directly irradiated with the laser beam 40 is locally at a higher temperature than the other portions, and the melting point of the sealing material 4. The unwelded portion 15 is heated up to. Therefore, in the secondary welding process step S6 of FIG. 1, the unwelded part 15 becomes higher than the heating temperature in the annealing process step S4 of FIG. 1, and the container 2, the lid 3 and the sealing material in this part and the vicinity thereof. The residual volatile components after annealing process step S4 adhering to 4 etc. volatilize in the secondary welding process step S6. On the other hand, in the portion of the package 20 that is not directly irradiated with the laser beam 40, the temperature does not rise to the melting point of the sealing material 4 unlike the unwelded portion 15, and is maintained at a temperature equal to or lower than the heating temperature in the annealing step S4. Therefore, the volatilization of residual volatile components is suppressed here.

  By the way, as described above, the irradiated portion of the laser beam 40 in the package 20 is so small that it can be spot-welded. Therefore, the influence of the temperature on the entire package 20 by the unwelded portion 15 and its neighboring region that are locally hot is small. Therefore, when viewed from the whole package 20, the temperature of the package 20 in the secondary welding process step S6 of FIG. 1 can be regarded as being lower than the temperature of the package 20 in the annealing process step S4 of FIG.

  Accordingly, in the secondary welding process step S6, the residual volatile components are volatilized in the unwelded portion 15 irradiated with the laser beam 40 and the vicinity thereof, but the entire package 20 has not been removed in the annealing process step S4. It is possible to perform complete sealing while effectively suppressing the volatilization of the volatile components, and therefore it is possible to prevent the gas derived from the residual volatile components from being enclosed in the package 20.

  Although not shown in FIG. 1, the package 20 of FIG. 2 completed by the manufacturing method shown in FIG. 1 is further processed in each step through a baking process and a standing cooling process. The package 20 thus completed is surface-mounted on a substrate such as a printed wiring board. As described above, here, such a surface mounting process of the package 20 is referred to as a reflow process. In the reflow process, for example, the package 20 is disposed on a printed wiring board via a bonding material such as a metal brazing material or solder, and the printed wiring board is heated at a predetermined temperature for a predetermined time for each package 20. Thereby, the package 20 is bonded to the printed wiring board by the molten bonding material and is surface-mounted.

  By the way, as described above in the annealing process step S4 of FIG. 1, here, the heating temperature of the package 20 in the annealing process step S4 is set to be higher than the heating temperature of the package 20 in the reflow process (that is, the melting point of the bonding material). Therefore, in the heating of the package 20 in the reflow process, the volatile components of the package 20 that volatilize at the heating temperature in the reflow process have already been removed in the annealing process step S4, and thus do not volatilize here.

  Further, the residual volatile components of the package 20 that have not been removed in the annealing process step S4 are not volatilized here because the heating temperature in the reflow process is lower than the heating temperature in the annealing process step S4. From the above, in the reflow process, even when the package 20 is heated for surface mounting, it is possible to suppress generation of gas due to volatilization of the volatile components of the package 20.

  Next, a specific temperature setting example of the annealing process step S4 and the cooling process step S5 of FIG. 1 in the present embodiment will be described. First, the setting of the heating temperature of the package 20 (see FIG. 2) in the annealing step S4 will be described. As described above, the heating temperature of the package 20 in the annealing step S4 is set according to the melting points of the sealing material 4 (see FIG. 2) and the bonding material used in the reflow process (hereinafter simply referred to as the bonding material). Therefore, it is appropriately set according to the types of the sealing material 4 and the bonding material.

  For the sealing material 4 and the bonding material, a eutectic brazing material, solder material, low melting point glass, or the like is used. Here, the brazing material and the solder material are distinguished from each other by the melting point. The brazing material is a material that melts at 450 ° C. or higher, and the solder material is a material that melts at less than 450 ° C.

  As brazing material, for example, silver brazing composed of Ag—Cu alloy, aluminum brazing composed of Al—Si alloy, nickel brazing composed of Ni—Cr alloy, Au—Cu alloy and Au—Ni alloy Metal brazing such as gold brazing, palladium brazing composed of Pd—Ag alloy and Pd—Ni alloy is used.

Further, as a solder material, for example, tin-lead solder composed of Sn—Pb alloy, aluminum solder composed of Al—Si alloy, gold solder composed of Au—Si alloy or Au—Sn alloy, Cd— Metal solder such as cadmium solder composed of a Zn alloy is used. The low-melting glass is specifically a glass that melts and softens at 300 to 700 ° C., and includes, for example, an inorganic low-melting glass containing PbO and B ₂ O ₃ as main components, an inorganic substance, and an organic substance. Including hybrid low-melting glass is used.

  For example, in the package 20 of FIG. 2, gold solder made of an Au—Sn alloy is used as the sealing material 4, and Sn—Pb eutectic solder is used as the bonding material. In this case, the melting point of the gold solder constituting the sealing material 4 is 280 ° C., and the melting point of the Sn—Pb eutectic solder constituting the bonding material is about 180 to 190 ° C. The heating temperature in step S4 is set to 240 to 280 ° C. Specifically, here, in the annealing step S4, the package 20 is heated at 280 ° C. for 90 seconds.

  For example, when the sealing material 4 is composed of a silver solder (melting point 780 ° C.) which is a high melting point material, the heating temperature of the package 20 in the annealing step S4 can be higher. When the package 20 is heated at a high temperature of 500 ° C. or higher, characteristic deterioration occurs in the crystal unit 1 housed in the package 20. Therefore, it is preferable that the upper limit of the heating temperature in the annealing step S4 is lower than 500 ° C. regardless of the melting point of the sealing material 4.

  On the other hand, regarding the setting of the cooling temperature of the package 20 of FIG. 2 in the cooling process step S5 of FIG. 1, the entire package 20 heated to a predetermined temperature (for example, 280 ° C.) in the annealing process step S4 as described above is shown in FIG. In the secondary welding process step S6, it is set as a requirement that the temperature does not become higher than the predetermined temperature. That is, the cooling temperature of the package 20 in the cooling process step S5 is relatively determined by the temperature of the package 20 in the annealing process step S4 and the secondary welding process step S6.

  For example, when the overall temperature of the package 20 in the secondary welding process step S6 becomes higher than 280 ° C., the annealing process is performed at 280 ° C., and therefore, it is removed in the annealing process step S4 in the secondary welding process step S6. The residual volatile component of the package 20 that did not exist is volatilized, and the gas derived from the volatile component is sealed inside the package 20. Therefore, here, the cooling temperature in the cooling step S5 is set so that the temperature of the package 20 in the secondary welding step S6 is 280 ° C. or lower. Here, in the cooling process step S5, cooling is performed until the temperature of the package 20 becomes less than 100 ° C., for example, 22 to 25 ° C.

  FIG. 5 is a diagram showing a temperature change of the package at each step in the package manufacturing method of the present embodiment. Here, the temperature of the package 20 (see FIG. 2) is an average temperature of the entire package 20.

  As shown in FIG. 5, in the temporary welding process (that is, equivalent to the temporary attachment in step S2 in FIG. 1), temporary welding is performed by short-time resistance welding, so the package 20 (see FIG. 2) is slightly less than room temperature. After rising to a high temperature, it immediately returns to room temperature. In the primary welding step S3 (see FIG. 1), most of the container 2 and the lid 3 are welded by the electron beam 10 as shown in FIG. Although the vicinity region is locally high in temperature, the average temperature of the entire package 20 is a temperature rise that slightly exceeds the melting point of the bonding material used in the reflow process. Then, the package 20 whose temperature has increased in this way returns to room temperature again.

  In the annealing process step S4 (see FIG. 1), the temperature of the package 20 rises to a temperature equal to or higher than the melting point of the bonding material used in the reflow process in accordance with the temperature setting described above. Thereafter, the package 20 is cooled according to the temperature setting described above in the cooling step S5 (see FIG. 1). And the cooled package 20 is further used for secondary welding process step S6 (refer FIG. 1). Specifically, in this case, in the cooling process step S5, even in the subsequent secondary welding process step S6, the laser beam 40 is irradiated as shown in FIG. The cooling temperature is set so that the average temperature of the entire package 20 in step S6 does not exceed the temperature in the annealing step S4.

  The package 20 once cooled to room temperature through the secondary welding process step S6 is further heated again in the baking process, whereby the temperature of the package 20 rises. The package 20 heated in the baking process is further subjected to a standing cooling process. Thereby, the temperature of the package 20 returns to room temperature again, and the package 20 which is a finished product is obtained. As described above, according to the package manufacturing method of the present embodiment in which the temperature of the package 20 changes as shown in FIG. 5 in each step, the degree of vacuum of the package 20 can be improved. It is possible to prevent deterioration of characteristics and reliability.

(Embodiment 2)
FIGS. 6-9 is a figure for demonstrating the manufacturing method of the package concerning Embodiment 2 of this invention. Specifically, FIG. 6 is a plan view of the container 2 used in the package 20 of the present embodiment as viewed from the bottom, and FIGS. 7 to 9 illustrate each processing step of the manufacturing method according to the present embodiment. It is a typical sectional view shown.

  The manufacturing method of the package according to the present embodiment includes the processing steps S1 to S6 shown in the flowchart of FIG. 1 as in the case of the first embodiment, but the processing in the primary welding step S3 of FIG. The processing in the secondary welding process step S6 is different from that of the first embodiment shown in FIGS.

  Details of the present embodiment will be described below. First, as shown in FIG. 6, in the package 20 of the present embodiment, the inside of the package 20 of FIG. 2 (that is, the accommodating portion of the crystal unit 1 of the container 2 shown in FIG. 2) A through-hole 500 that communicates with the outside of the package 20 is provided. Therefore, here, the through-hole 500 corresponds to the communication portion.

  As shown in FIG. 7, the bottom of the container 2 is configured by stacking two bottom plates 601 and 602, and includes a first bottom plate 601 disposed on the outside and a second bottom plate 602 disposed on the inside. , Circular through holes 603 and 604 are respectively provided.

  The through-hole 603 of the first bottom plate 601 and the through-hole 604 of the second bottom plate 602 are formed so that when the first and second bottom plates 601 and 602 are stacked to form the bottom surface of the container 2, The two through-holes 603 and 604 are combined to form the through-hole 500 by overlapping each other. In such a through-hole 500, the first bottom plate 601 and the second bottom plate 602 each protrude at a portion where the through-holes 603 and 604 do not overlap each other in the hole, whereby the through-hole 500 in which the inside of the hole has a stepped shape. Is formed.

  Next, a method for manufacturing the package 20 of the present embodiment will be described. First, in the present embodiment, as in the case of the first embodiment, the processing of step S1 and step S2 in FIG. 1 is performed. Thereafter, the electron beam 10 is irradiated from the lid 3 side of the package 20 under a vacuum state, and the primary welding step S3 in FIG. 1 is performed.

  In the first embodiment, the electron beam 10 is scanned along the periphery of the lid 3 except for the unwelded portion 15 as shown in FIG. The electron beam is scanned over the entire circumference of the three edges. Thereby, the sealing material 4 is melted around the entire periphery of the lid 3, and the lid 3 and the container 2 are completely welded in the primary welding step S <b> 3 without forming the unwelded portion 15. Here, the lid 3 and the container 2 are welded by the electron beam 10, but the welding method is not limited to electron beam irradiation. For example, the lid 3 and the container 2 are connected in a heating furnace. You may heat and weld.

  In such a primary welding process step S3, as in the case of the first embodiment, a gas (for example, a gas derived from a volatile component of the sealing material 4 or a volatile component attached to the package 20) is accompanied by the electron beam irradiation. Here, this gas is discharged from the inside of the package 20 to the outside through the through-hole 500 of FIG. 6 arranged at the bottom of the container 2. Therefore, even if the unwelded portion 15 of FIG. 3 is not formed as in the first embodiment, the gas can be discharged as in the first embodiment.

  Subsequently, as in the case of the first embodiment, the secondary welding process step S6 of FIG. 1 is performed. In the secondary welding process step S6 of the present embodiment, the through hole sealing material is loaded as follows. And a beam welding process of a through hole.

  Specifically, after the above-described primary welding process step S3, each of the annealing process step S4 and the cooling process step S5 in FIG. 1 is performed in the same manner as in the first embodiment, thereby performing the annealing process step. In S4, as described above, the volatile components attached to the package 20 are volatilized to generate gas. Here, the gas derived from the volatile component is discharged from the inside of the package 20 to the outside through the through hole 500.

  Thereafter, as shown in FIG. 7, a through-hole sealing material 600 is loaded (arranged) into the through-hole 500 in order to close the through-hole 500 at the bottom of the container 2. Here, the substantially spherical through hole sealing material 600 is disposed in the through hole 603 of the first bottom plate 601 in contact with the surface of the second bottom plate 602. Such a process of arranging the through hole sealing material 600 is referred to as a through hole sealing material loading process. This through hole sealing material loading step is performed in a vacuum state.

  In the above, the case where the through hole sealing material loading process is provided after the annealing process step S4 and the cooling process step S5 of FIG. 1 is illustrated, but the through hole sealing material loading process is performed in the annealing process step S4. It may be before or between the annealing step S4 and the cooling step S5. In these cases, the gas generated in the annealing step S4 is discharged to the outside through the through hole 500 loaded with the through hole sealing material 600. However, the through hole sealing material 600 and the through hole 500 Since a gap is formed between them, gas can be discharged through the gap.

  After the through hole sealing material loading step, the beam welding step of the through hole 500 is performed. Specifically, as shown in FIG. 8, the through hole sealing material 600 loaded in the through hole 500 is selectively irradiated with the laser beam 40 to melt the through hole sealing material 600. As a result, as shown in FIG. 9, the melted through-hole sealing material 600 is filled in the through-hole 500 to close the through-hole 500, thereby realizing complete sealing of the package 20 (see FIG. 2). .

  As described above, in this embodiment, the through hole sealing material loading step and the beam welding step of the through hole 500 constitute the secondary welding step S6 of FIG. This beam welding process corresponds to a communicating part beam welding process.

  As described above, in the package manufacturing method according to the first and second embodiments, the heating temperature of the package 20 in the annealing step S4 is set to a predetermined temperature, that is, between the lid 3 and the container 2. The temperature is set lower than the melting temperature of the provided sealing material 4 and higher than the melting temperature of the adhesive in the reflow process, and the cooling process is performed between the annealing process step S4 and the secondary welding process step S6. Step S5 is provided, and the package 20 is cooled to a predetermined temperature, that is, a temperature at which the temperature of the package 20 in the secondary welding process step S6 can be made lower than the temperature of the package 20 in the annealing process step S4.

  According to the configuration of the first embodiment and the second embodiment, it is possible to suppress the remaining volatile components of the package 20 that have not been removed in the annealing process step S4 from volatilizing in the process after the annealing process step S4. It becomes possible. As a result, it is possible to suppress the gas derived from the volatile component adhering to the package 20 from being enclosed in the package 20, and therefore, characteristic deterioration and reliability of the crystal unit 1 housed in the package 20. Deterioration is prevented.

  For example, with respect to the crystal unit sealed body composed of the package 20 containing the crystal unit 1, the temperature setting in the annealing step S4 is not performed and the cooling step S5 is performed as in the first and second embodiments. In a quartz crystal encapsulated body manufactured by a conventional manufacturing method that does not provide the same, the equivalent series resistance value (CI value) is as large as 60 to 100 kΩ, and individual variations also increase. On the other hand, in the crystal unit sealed body manufactured by the manufacturing method of the first embodiment and the second embodiment, the CI value is as small as 38 to 50 kΩ, and the variation among individuals is also small. The oscillation characteristics of the crystal unit 1 are improved.

2. Package manufacturing apparatus (Embodiment 3)
FIG. 10 is a plan view from above of the apparatus schematically showing the overall configuration of the package manufacturing apparatus according to the third embodiment of the present invention. FIG. 11 is a plan view showing a configuration of a tray used for supplying a package which is a processing target (that is, a workpiece) of the package manufacturing apparatus of FIG.

  As shown in FIG. 10, the package manufacturing apparatus 900 includes a workpiece loading / unloading chamber 901, a vacuum preparatory chamber 902, a workpiece transfer chamber 903, and a vacuum processing chamber 904 from the side close to the loading / unloading port 916 of the tray 1000 of FIG. They are arranged in order.

  In the package manufacturing apparatus 900, as will be described later, since the sealing process of the package 20 of FIG. 2 which is the main operation is performed in the vacuum processing chamber 904, the vacuum processing chamber 904 corresponds to the main part of the package manufacturing apparatus 900. . A conveyance path 905 that communicates with the vacuum processing chamber 904 and realizes loading and unloading of the workpiece (specifically, the package 20 disposed on the tray 1000) into the vacuum processing chamber 904 is a workpiece loading / unloading chamber 901. The vacuum preparatory chamber 902 and the workpiece transfer chamber 903 are configured.

  12 is a schematic cross-sectional view of the vacuum processing chamber 904 taken along line XI-XI in FIG. As shown in FIGS. 10 and 12, the vacuum processing chamber 904 includes a stainless steel cylindrical chamber 906 whose both end faces are sealed with a top plate and a bottom plate, and laser beam irradiation disposed outside the chamber 906. Device 909. Inside the chamber 906, as shown in FIG. 10, a delivery unit 910 that delivers the tray 1000 to and from the transport path 905, a heating unit 911 in which the annealing step S4 of FIG. 1 is performed, and FIG. A cooling unit 912 in which the cooling process step S5 is performed and a laser beam irradiation unit 913 in which the secondary welding process step S6 in FIG. 1 is performed are provided.

  A transfer unit 910 is disposed at a communication portion between the transfer path 905 and the vacuum processing chamber 904, and the transfer unit 910, the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913 are arranged around a rotation axis A described later. In this order in the forward direction with the watch. Here, the inside of the chamber 906 is divided into four equal parts, and the respective parts 910 to 913 are arranged, the heating part 911 and the laser beam irradiation part 913 are arranged to face each other via the rotation axis A, and the delivery part 910 is arranged. And the cooling unit 912 are arranged to face each other with the rotation axis A interposed therebetween.

  The delivery unit 910, the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913 in the chamber 906 are not partitioned by a partition wall or the like. Therefore, the constituent spaces of the units 910 to 913 are completely opened in the chamber 906. It has been configured. In the chamber 906, the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913 will be described later in a state in which the inside is maintained in a vacuum state without providing a partition wall, a heat insulating material, or the like that separates the internal units 910 to 913. Therefore, heat exchange is not performed between the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913. Therefore, in the chamber 906 where the respective portions 910 to 913 are not spatially independent, the heating temperature of the heating unit 911 is maintained at 280 ° C. during the sealing process described later, and the cooling temperature of the cooling unit 912 is set to 22 to It becomes possible to hold | maintain at 25 degreeC.

  A rotation axis A is arranged inside the chamber 906 of the vacuum processing chamber 904 so as to coincide with the center of the chamber 906. As shown in FIG. 12, a rotary table 908 is attached to one end of the rotary shaft A. The other end of the rotating shaft A passes through the bottom plate of the chamber 906 and protrudes downward, and is connected to driving means 1110 disposed outside the chamber 906.

  As shown in FIG. 10, the turntable 908 is formed of a cross-shaped plate material, and the trays 1000 are respectively disposed on four projecting portions provided at 90 ° intervals. Further, as shown in FIG. 12, the rotary table 908 has a penetrating portion 908 a at the place where the tray 1000 is arranged. Then, the rotary table 908 rotates clockwise and forward about the rotation axis A so that each tray 1000 is sequentially supplied (conveyed) from the delivery unit 910 to the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913 ( Rotate). Further, the rotary table 908 is configured so that the tray 1000 can be transferred to and from the transfer table 917 in the workpiece transfer chamber 903.

  As illustrated in FIG. 12, a heating device 1100 is disposed in the heating unit 911 in the chamber 906. The heating device 1100 includes a support member 1101 supported by the bottom plate of the chamber 906, an upper heating member 1102 and an optical mask 1107 that are attached to and supported by the support member 1101, and a lower heating member supported by the bottom plate of the chamber 906. 1103. An upper heating member 1102 is disposed above the rotary table 908, and an optical mask 1107 and a lower heating member 1103 are disposed below.

  The upper heating member 1102 has a heating plate 1105 in which a plurality of linear heaters 1106 are embedded as a heat source. Although not shown here, the heater 1106 embedded in the heating plate 1105 is connected to a heating power source via wiring. The upper heating member 1102 is configured to be vertically movable along a support member 1101 disposed in the vertical direction, and the vertical movement is realized by, for example, an actuator and a control unit (not shown).

  As will be described later, in the heating apparatus 1100, when the tray 1000 is supplied to the heating unit 911 and disposed at a predetermined position, the upper heating member 1102 descends along the support member 1101 disposed in the vertical direction. Thereby, the upper heating member 1102 is in direct contact with the surfaces of the plurality of packages 20 (see FIG. 10) arranged on the tray 1000. On the other hand, when the heating process in the heating unit 911 is finished, the upper heating member 1102 moves up along the support member 1101 arranged in the vertical direction. As a result, a space is formed between the package 20 arranged on the tray 1000 and the upper heating member 1102, and the turntable 908 can be rotated.

  On the other hand, the lower heating member 1103 of the heating device 1100 includes a lamp heater 1104 as a heat source. An optical mask 1107 is disposed between the lamp heater 1104 and the back surface of the rotary table 908. Here, a halogen lamp is used as the lamp heater 1104. The optical mask 1107 is disposed to selectively transmit heat from the lamp heater 1104 to the tray 1000 and to suppress heat transfer to other regions of the rotary table 908. A light guide structure capable of selectively irradiating the tray 1000 with light emitted from a halogen lamp as the heater 1104 is provided.

  In the above description, the heating device 1100 having the configuration in which the lower heating member 1103 includes the lamp heater 1104 has been described. However, the configuration of the heating device may be other than this. For example, FIG. 13 is a schematic cross-sectional view showing another configuration of the heating device.

  As shown in FIG. 13, in the heating device 1200, the lower heating member 1201 includes a heating plate 1202 in which a plurality of linear heaters 1203 are embedded as a heat source. Although not shown here, the heater 1203 embedded in the heating plate 1202 is connected to a heating power source via wiring. The lower heating member 1201 having such a configuration is configured to be movable up and down along the support member 1101 arranged in the vertical direction, like the upper heating member 1102.

  In the heating apparatus 1200 including the lower heating member 1201 having such a heating plate 1202, when the tray 1000 is supplied to the heating unit 911 and disposed at a predetermined position, the heating apparatus 1200 follows the support member 1101 disposed in the vertical direction. Thus, the upper heating member 1102 is lowered and the lower heating member 1201 is raised. Accordingly, the upper heating member 1102 and the lower heating member 1201 sandwich the package 20 (see FIG. 10) disposed on the tray 1000 and directly contact the front surface of the package 20 and the back surface of the tray 1000, respectively.

  Here, the protrusion on the upper surface of the lower heating member 1201 directly contacts the back surface of the tray 1000 through the through portion 908 a of the turntable 908. On the other hand, when the heating process in the heating unit 911 ends, the upper heating member 1102 rises and the lower heating member 1201 descends along the support member 1101 arranged in the vertical direction. Thereby, the tray 1000 and the package 20 (see FIG. 10) sandwiched between the upper heating member 1102 and the lower heating member 1201 are released, and the turntable 908 can be rotated.

  14 is a schematic cross-sectional view showing still another configuration of the heating device, and FIG. 15 is a partially enlarged view showing a detailed configuration of a push-up member of the heating device in FIG. As shown in FIGS. 14 and 15, the heating device 1200 a has the same configuration as the heating device 1200 of FIG. 13, but differs from the heating device 1200 in the following points.

  That is, as shown in FIG. 15, in the heating device 1200 a, the lower heating member 1201 includes a push-up member 1204 of the package 20, and the back surface of the package 20 disposed on the tray 1000 is pressed by the push-up member 1204. The package 20 is pushed up to the upper heating member 1102 side. Accordingly, the surfaces of all the packages 20 arranged on the tray 1000 can be reliably brought into contact with the upper heating member 1102.

  Here, for simplification of illustration, the number of packages 20 arranged on the tray 1000 and the number of push-up members 1204 included in the lower heating member 1201 are shown smaller than actual. Here, as shown in FIG. 11, since the tray 1000 in which 96 packages 20 are arranged is used, 96 packages 20 and 96 push-up members 1204 corresponding thereto are actually arranged. Has been.

  The push-up member 1204 includes a push-up pin 1204a, a shaft body 1204b, a pin housing base 1204c, and a coil spring 1204d. The push-up pin 1204a, the shaft body 1204b, the pin housing base 1204c, and the coil spring 1204d are made of a material having high thermal conductivity such as metal. With the push-up member 1204 configured from the members 1204a to 1204d configured by such a material, the heat of the lower heating member 1201 can be efficiently transmitted to the package 20.

  The pin housing base 1204 c has a cylindrical shape with one end sealed, and is embedded in the lower heating member 1201 with the open end directed upward in the thickness direction of the lower heating member 1201. A coil spring 1204d is housed inside the pin housing base 1204c, and a shaft body 1204b is housed by contacting the lower end of the coil spring 1204d. A needle-shaped push-up pin 1204a is attached to the upper end of the shaft body 1204b. The configuration of the push-up member 1204 is not limited to the illustrated configuration, and may be other configurations.

  As shown in FIG. 15, in the package manufacturing apparatus 900 of FIG. 10 provided with the heating apparatus 1200a having such a configuration, when the tray 1000 is supplied to the heating unit 911 and arranged at a predetermined position, the apparatus is arranged in the vertical direction. The upper heating member 1102 is lowered along the support member 1101 (see FIG. 14), and the lower heating member 1201 is raised. Accordingly, the upper heating member 1102 and the lower heating member 1201 sandwich the package 20 (see FIG. 10) disposed on the tray 1000 and directly contact the front surface of the package 20 and the back surface of the tray 1000, respectively.

  Here, the protrusion on the upper surface of the lower heating member 1201 directly contacts the back surface of the tray 1000 through the through portion 908 a of the turntable 908. Further, in the heating device 1200 a, the back surface of the package 20 on the tray 1000 is pressed by the push-up pins 1204 a of the lower heating member 1201 and pushed up to the upper heating member 1102 side. That is, in the state where the tray 1000 is sandwiched between the lowered upper heating member 1102 and the raised lower heating member 1201 as described above, the coil spring 1204d of the push-up member 1204 contracts. The shaft 1204b and the push-up pin 1204a attached to the tip of the shaft 1204b are pushed up to the upper heating member 1102 side.

  The pushed-up push pins 1204 a penetrate the tray 1000 through the opening portion 1002 of the tray 1000 and abut against the back surface of the package 20 disposed on the opening portion 1002 to press the package 20. Since the package 20 is sandwiched between the lower heating member 1201 and the upper heating member 1102 and is further pushed up from the back surface side by the push-up pins 1204a in this manner, the surface reliably contacts the upper heating member 1102.

  In this case, even if the thicknesses of the plurality of packages 20 arranged on the tray 1000 vary, it is possible to ensure that all the packages 20 are brought into contact with the upper heating member 1102 by being pushed up by the push-up pins 1204a. Therefore, in such a configuration, it is possible to suppress the variation in the heating state for each package 20 and efficiently and uniformly heat all the packages 20.

  When the heating process in the heating unit 911 is completed, the upper heating member 1102 rises and the lower heating member 1201 descends along the support member 1101 arranged in the vertical direction. Thereby, the tray 1000 and the package 20 (see FIG. 10) sandwiched between the upper heating member 1102 and the lower heating member 1201 are released, and the turntable 908 can be rotated. In the lower heating member 1201 lowered as described above, the contracted coil spring 1204d expands and returns to the initial state. Further, the push-up pin 1204a descends as the lower heating member 1201 descends, retracts from the opening 1002 of the tray 1000, and returns to the initial position below the turntable 908.

  16 is a schematic cross-sectional view of the vacuum processing chamber taken along line XIII-XIII in FIG. As shown in FIG. 16, a cooling device 1300 is disposed in the cooling unit 912 in the chamber 906. The cooling device 1300 includes a support member 1301 supported by the bottom plate of the chamber 906, and an upper cooling member 1302 and a lower cooling member 1303 that are attached to and supported by the support member 1301. An upper cooling member 1302 is disposed above the rotary table 908, and a lower cooling member 1303 is disposed below.

  The upper cooling member 1302 and the lower cooling member 1303 have cooling plates 1304 and 1305 configured to allow a refrigerant to flow as a cooling source. The cooling plates 1304 and 1305 are supplied with refrigerant from a refrigerant supply unit (not shown), and here, cooling water is supplied as the refrigerant. The cooling water supplied to the cooling plates 1304 and 1305 exchanges heat between the tray 1000 and the package 20 (see FIG. 10) in the process of flowing through the cooling plates 1304 and 1305, and the tray 1000 and the package 20 Take the heat away from it and cool them. Such a cooling device 1300 may be configured to circulate cooling water.

  In addition, in the above, although the cooling device 1300 which cools by flowing a refrigerant was described, the cooling device may have a configuration other than this. For example, a cooling device including a Peltier element as a cooling source may be used.

  The upper cooling member 1302 and the lower cooling member 1303 are configured to be movable up and down along the support member 1301 arranged in the vertical direction, and the vertical movement is realized by, for example, an actuator and a control unit (not shown). . As will be described later, in the cooling device 1300, when the tray 1000 is supplied to the cooling unit 912 and disposed at a predetermined position, the upper cooling member 1302 descends along the support member 1301 disposed in the vertical direction and the lower portion The cooling member 1303 rises.

  Accordingly, the upper cooling member 1302 and the lower cooling member 1303 sandwich the tray 1000 and the package 20 (see FIG. 10) disposed on the tray 1000, and directly contact the front surface of the package 20 and the back surface of the tray 1000, respectively. Here, the protrusion on the upper surface of the lower cooling member 1303 directly contacts the back surface of the tray 1000 through the through portion 908 a of the rotary table 908.

  On the other hand, when the cooling process in the cooling unit 912 is completed, the upper cooling member 1302 rises and the lower cooling member 1303 descends along the support member 1301 arranged in the vertical direction. As a result, the tray 1000 and the package 20 held between the upper cooling member 1302 and the lower cooling member 1303 are released, and the turntable 908 can be rotated.

  FIG. 17 is a schematic cross-sectional view showing another configuration of the cooling device. As shown in FIG. 17, the cooling device 1300a has the same configuration as that of the cooling device 1300 of FIG. Yes. Since the detailed configuration and operation of the push-up member 1306 of the cooling device 1300a are the same as those of the push-up member 1204 of the heating device 1200a shown in FIG. 15, the illustration and description are omitted here. Note that the configuration of the push-up member 1306 is not limited to the configuration similar to that shown in FIG. 15, and may be other configurations.

  In the cooling device 1300a provided with such a push-up member 1306, the package 20 can be pushed up from the back side by the push-up pins 1204a (see FIG. 15), and the surface thereof can be reliably brought into contact with the upper cooling member 1302. . Therefore, even if there are variations in the thickness of the plurality of packages 20 arranged on the tray 1000, variations in the cooling state for each package 20 can be suppressed, and all the packages 20 can be efficiently and uniformly cooled.

  As shown in FIG. 12, in the laser beam irradiation unit 913 in the chamber 906, a laser beam transmission window 1111 is disposed on the top plate of the chamber 906. A laser beam irradiation device 909 is disposed outside the chamber 906. A laser beam irradiation device 909 includes a laser head 909a provided with a laser light source, a bar-shaped head support member 909b configured to be slidable in the X direction in the drawing, and a long axis as a head support member. It has a bar-like head support member movable member 909c which is arranged perpendicular to the major axis of 909b and is configured to be able to slide the head support member 909b in the Y direction in the figure.

  The head support member 909b is supported by a head support member movable member 909c. The head support member movable member 909c is supported by a predetermined portion of the package manufacturing apparatus 900 (see FIG. 10). Further, although not shown here, the laser beam irradiation device 909 can realize sliding movement of the laser head 909a on the head support member 909b and sliding movement of the head support member 909b on the head support member movable member 909c. Actuating actuators and control means are arranged.

  By combining the slide movement in the X direction of the laser head 909a in the head support member 909b and the slide movement in the Y direction of the head support member 909b in the head support member movable member 909c, desired in a plane including the X axis and the Y axis. The laser head 909a can be disposed at the position. Thereby, as will be described later, in the secondary welding step S6 of FIG. 1, a laser beam 40 (see FIG. 4 or FIG. 9) is irradiated to a desired position of each package 20 of FIG. It becomes possible.

  As shown in FIG. 10, the conveyance path 905 has one end communicating with the inside of the chamber 906 and the other end being open to the atmosphere. The workpiece transfer chamber 903, the vacuum preparatory chamber 902, and the workpiece loading / unloading chamber 901 constituting the transfer path 905 are formed by being surrounded by a wall material. A door 914 is disposed between the work loading / unloading chamber 901 and the vacuum preparatory chamber 902 in the transfer path 905, and a double door 915 is disposed between the vacuum preparatory chamber 902 and the work transfer chamber 903. It is arranged. By closing these doors 914 and 915, the inside of the vacuum processing chamber 904 and the workpiece transfer chamber 903 can be maintained in a vacuum state.

  A conveyor 907 for conveying the tray 1000 is disposed in each of the workpiece carry-in / out chamber 901, the vacuum preliminary chamber 902, and the workpiece delivery chamber 903. In addition, a transfer table 917 configured to be rotatable about the axis B is disposed at a connecting portion between the workpiece transfer chamber 903 and the chamber 906 of the vacuum processing chamber 904. The delivery table 917 has a rectangular plate shape, and the trays 1000 are disposed at both ends thereof.

  By a conveyor 907 and a delivery table 917 disposed in each chamber 901 to 903 of the transport path 905, the tray 1000 loaded from the outside of the package manufacturing apparatus 900 is transported through the chambers 901 to 903 in this order and vacuum processed. The tray 1000 that is supplied into the chamber 906 of the chamber 904 and sealed in the chamber 906 is transported through the chambers 903 to 901 in this order and is carried out of the package manufacturing apparatus 900.

  FIG. 10 shows an outline of the carry-in / carry-out route of the tray 1000 in the conveyance path 905, and illustration and description of the detailed configuration of the carry-in / carry-out route are omitted. The carry-in route and the carry-out route of the tray 1000 in the conveyance path 905 are not particularly limited as long as the tray 1000 can be continuously conveyed. For example, the carry-out route and the carry-in route may be provided separately in parallel vertically and horizontally.

  As shown in FIG. 11, the tray 1000 supplied to the package manufacturing apparatus 900 of FIG. 10 has a plurality of recesses formed on the surface, and a plurality (in this case, 96) of package accommodating units 1001 are formed by the recesses. . Here, the package housing portions 1001 are arranged in a matrix. In each of the plurality of package housing portions 1001, the package 20 of FIG. 3 or FIG. 7 that has undergone the processing up to the primary welding step S3 of FIG. 1 is arranged. For example, the package 20 of FIG. 3 is arranged in the package housing part 1001 with the lid 3 facing up, while the package 20 of FIG. 7 has the bottom of the container 2 in which the through-hole sealing material 600 is arranged up. Are disposed in the package housing portion 1001.

  An opening 1002 is formed on the bottom surface of the package housing part 1001. In addition, a positioning hole 1003 used for positioning when the tray 1000 is disposed on the rotary table 908 of the vacuum processing chamber 904 is provided at the edge of the tray 1000.

  For example, when the heating unit 911 of the package manufacturing apparatus 900 includes the heating apparatus 1100 shown in FIG. 12, the light emitted from the lamp heater 1104 of the lower heating member 1103 of the heating apparatus 1100 is transmitted through the opening 1002. The lamp light transmission window is formed. In addition, when the heating unit 911 of the package manufacturing apparatus 900 includes the heating apparatus 1200a illustrated in FIG. 14 or when the cooling unit 912 includes the cooling apparatus 1300a illustrated in FIG. The part 1002 becomes an insertion part of the push-up pin 1204a.

  In the package manufacturing apparatus 900 of the present embodiment configured as described above, the heating unit 911 provided with the heating device 1100 (or the heating device 1200) in the vacuum processing chamber 904 corresponds to an annealing unit, and the cooling device 1300 is provided. The cooling unit 912 provided with a laser beam irradiation unit 913 provided with a laser beam irradiation device 909 corresponds to a communication unit beam welding unit. Here, the tray 1000 corresponds to a holding unit, and the rotary table 908 corresponds to a rotary conveyance unit. Although not shown in FIG. 10, in the package sealing apparatus 900, an exhaust unit is appropriately provided so that a vacuum state can be maintained in the vacuum processing chamber 904, the workpiece transfer chamber 903, and the vacuum preliminary chamber 902. ing.

  Next, the operation of the package manufacturing apparatus having such a configuration will be described. In an actual operation of the package manufacturing apparatus 900, a plurality of trays 1000 are continuously supplied at a predetermined interval in one operation, whereby a plurality of trays 1000 are sealed by one operation. The However, here, for simplification of description, description will be made by paying attention to the flow of one tray 1000.

  As shown in FIG. 10, first, the tray 1000 is loaded into the work loading / unloading chamber 901 of the package manufacturing apparatus 900 from the outside of the apparatus. In the tray 1000, the package 20 of FIG. 3 that has undergone the primary welding step S3 of FIG. 1 or the package 20 of FIG. 7 in which the through-hole sealing material 600 is loaded inside the through-hole 500 is accommodated in a plurality of packages. Each is stored in a portion 1001 (see FIG. 11).

When the tray 1000 is loaded into the workpiece loading / unloading chamber 901, the door 915 between the vacuum preliminary chamber 902 and the workpiece delivery chamber 903 is closed, and the vacuum processing chamber 904 and the workpiece delivery chamber 903 are evacuated to form a vacuum state. (For example, 10 ⁻⁴ Pa). On the other hand, the door 914 between the work loading / unloading chamber 901 and the vacuum preparatory chamber 902 is open, so that the work loading / unloading chamber 901 and the vacuum preparatory chamber 902 are maintained at atmospheric pressure.

The tray 1000 loaded into the workpiece loading / unloading chamber 901 is conveyed to the vacuum preliminary chamber 902 through the conveyor 907. When the tray 1000 is loaded into the vacuum preliminary chamber 902, the tray 1000 is transported to the workpiece transfer chamber 903 side through the conveyor 907. Then, the door 914 is closed and the vacuum preparatory chamber 902 is evacuated, and the chamber is maintained in the same vacuum state (for example, 10 ⁻⁴ Pa) as the workpiece transfer chamber 903 and the vacuum processing chamber 904. When the vacuum state is realized in the vacuum preliminary chamber 902 in this way, the door 915 is opened, and the tray 1000 is carried into the workpiece transfer chamber 903 through the conveyor 907. Thereafter, the door 915 and the door 914 are closed again.

  The tray 1000 carried into the workpiece delivery chamber 903 is transported toward the vacuum processing chamber 904 through the conveyor 907 and further disposed on the delivery table 917. Then, along with the rotation of the delivery table 917, the tray 1000 is delivered to the portion of the rotary table 908 located in the delivery unit 910 of the vacuum processing chamber 904.

  Thus, the tray 1000 conveyed to the delivery unit 910 of the vacuum processing chamber 904 is accurately arranged at a predetermined position of the rotary table 908 using the positioning hole 1003 shown in FIG. Thus, the tray 1000 positioned on the rotary table 908 holds the position when the rotary table 908 is rotated and sequentially conveyed to the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913.

  The tray 1000 disposed in the delivery unit 910 of the vacuum processing chamber 904 is conveyed from the vacuum processing chamber 904 and the delivery unit 910 to the heating unit 911 as the rotary table 908 rotates by 90 °. As shown in FIG. 11, in the heating unit 911, the upper heating member 1102 of the heating device 1100 directly contacts the surface of the package 20 (see FIG. 10) disposed on the tray 1000. 20 is heated.

  In the lower heating member 1103, the light emitted from the lamp heater 1004 is selectively applied to the back surface of the tray 1000 through the through portion 908 a of the rotary table 908 through the optical mask 1107. Further, this light is applied to the back surface of the package 20 (see FIG. 10) through an opening 1002 (see FIG. 11) which is a lamp light transmission window of the tray 1000. Thereby, the package 20 is heated from the back side.

  In the heating of the package 20 in the heating unit 911 as described above, since the upper heating member 1102 and the surface of the package 20 are in direct contact, even if the inside of the chamber 906 of the vacuum processing chamber 904 is in a vacuum state, the heating is efficiently performed. Can be done. In addition, by selectively irradiating the back surface of the tray 1000 with light from the lower heating member 1103 using the optical mask 1107, heat transfer to the area of the turntable 908 where the tray 1000 is not disposed is suppressed. The light irradiation part can be selectively heated. Therefore, it becomes possible to heat efficiently.

  In the heating using the heating device 1200 shown in FIG. 13 instead of the heating device 1100 shown in FIG. 12, the lower heating member 1201 is in direct contact with the back surface of the tray 1000 through the through portion 908a of the rotary table 908. Therefore, the tray 1000 and the package 20 disposed on the tray 1000 can be more effectively heated from the back side.

  Further, in the heating using the heating device 1200a shown in FIG. 14, as shown in FIG. 15, the package 20 is pressed from the back side by the push-up pins 1204a protruding from the lower heating member 1201, and the surfaces of all the packages 20 are surely secured. Since it can be brought into contact with the upper heating member 1102, it is possible to heat more effectively and to suppress variations in the heating state for each package.

  As described above, by heating the package 20 for each tray 1000 in the heating unit 911, the annealing step S4 in FIG. 1 is performed. In this case, the heating temperature in the annealing step S4 is set to the temperature described above in the first embodiment (here, 280 ° C.), and the treatment is performed at such temperature for 90 seconds.

  After the annealing step S4 of FIG. 1 is performed in the heating unit 911 as described above, the tray 1000 is conveyed to the cooling unit 912 as the rotary table 908 further rotates 90 °. Then, the cooling process step S5 of FIG. 1 is performed on the tray 1000 conveyed to the cooling unit 912.

  Specifically, in the cooling process step S5 in the cooling unit 912, as shown in FIG. 13, the upper cooling member 1302 of the cooling device 1300 directly contacts the surface of the package 20 (see FIG. 10) arranged on the tray 1000. . Thereby, heat exchange is performed at the contact portion, and the package 20 is cooled from the surface side. Further, the lower cooling member 1303 of the cooling device 1300 directly contacts the back surface of the tray 1000 via the through portion 908a of the rotary table 908. Thereby, heat exchange is performed at the contact portion, and the tray 1000 and the package 20 disposed thereon are cooled from the back side.

  As described above, the cooling unit 912 in which the upper cooling member 1302 is in direct contact with the surface of the package 20 and the lower cooling member 1303 is in direct contact with the back surface of the tray 1000 is efficient even if the inside of the chamber 906 is in a vacuum state. Cooling can be performed. In the cooling process step S5 of FIG. 1 performed in the cooling unit 912, the cooling temperature of the package 20 is set to the temperature described above in the first embodiment (here, 22 to 25 ° C.). Processing is performed for 90 seconds. In particular, in the cooling device 1300a shown in FIG. 17, since the surface of the package 20 can be reliably brought into contact with the upper cooling member 1302 by the push-up pins 1306, it is possible to perform cooling more efficiently.

  In the cooling using the cooling device 1300a shown in FIG. 17 instead of the cooling device 1300 shown in FIG. 16, the package 20 is pressed from the back side by the push-up pins 1204a (see FIG. 15) protruding from the lower cooling member 1303. Since the surfaces of all the packages 20 can be surely brought into contact with the upper cooling member 1302, it is possible to cool more effectively and to suppress variations in the cooling state of each package. It becomes.

  After the cooling process step S5 of FIG. 1 is performed in the cooling unit 912 as described above, the tray 1000 is conveyed to the laser beam irradiation unit 913 as the turntable 908 further rotates 90 °. Then, the secondary welding step S6 of FIG. 1 (in other words, the communicating portion beam welding step) is performed on the tray 1000 conveyed to the laser beam irradiation unit 913.

  Specifically, in the laser beam irradiation unit 913, the laser beam 40 (see FIG. 4 or FIG. 8) oscillated from the laser beam head 909a of the laser beam irradiation apparatus 909 in FIG. It is introduced into the chamber 906 through the beam transmission window 1111 and selectively irradiates a predetermined portion of the package 20 (see FIG. 10) arranged on the tray 1000.

  For example, when the package 20 of FIG. 3 is arranged on the tray 1000, the laser beam 40 is irradiated to the unwelded portion 15 as described in the first embodiment. When the package 20 of FIG. 7 is arranged on the tray 1000, the laser beam 40 is irradiated to the through hole sealing material 600 loaded in the through hole 500 at the bottom of the container 2. By irradiation with such a laser beam 40, the sealing material 4 or the through-hole sealing material 600 in the irradiated portion is melted, and the package 20 is completely sealed.

  Here, the laser beam 40 is irradiated onto a predetermined portion of each of the plurality of packages 20 arranged on the tray 1000 as described above, and the adjacent packages 20 are sequentially irradiated. Thus, in the laser beam irradiation part 913 in which the secondary welding process step S6 of FIG. 1 is performed, the processing is performed for 90 seconds at a temperature at which the sealing material 4 or the through-hole sealing material 600 is melted.

  After the secondary welding process step S6 of FIG. 1 is performed in the laser beam irradiation unit 913 as described above, the tray 1000 is further rotated by 90 ° as the turntable 908 is rotated as shown in FIG. And transferred to the delivery unit 910. Then, the tray 1000 is transferred from the rotary table 908 to the transfer table 917, and the tray 1000 is further conveyed to the vacuum preliminary chamber 902 side through the conveyor 907 of the work transfer chamber 903.

  Thus, when the tray 1000 is transported to the vacuum preparatory chamber 902 side in the work transfer chamber 903, the door 915 and the door 914 are closed. Therefore, the vacuum processing chamber 904, the work transfer chamber 903, and the vacuum preparatory chamber are closed. 902 is maintained in a vacuum state. Subsequently, the door 915 is opened in this state, and the tray 1000 is further conveyed to the vacuum preliminary chamber 902. Thereafter, the door 915 is closed.

  After the tray 1000 is carried into the vacuum preliminary chamber 902, the door 914 is opened. Thereby, the vacuum preliminary chamber 902 is opened to the atmosphere from the vacuum state. In this case, since the door 915 is closed as described above, even when the vacuum preliminary chamber 902 is opened to the atmosphere, the workpiece transfer chamber 903 and the vacuum processing chamber 904 are kept in a vacuum state.

  The tray 1000 transferred to the workpiece loading / unloading chamber 901 side through the conveyor 907 in the vacuum preliminary chamber 902 is further loaded into the workpiece loading / unloading chamber 901. And it is carried out of the package manufacturing apparatus 900 through the conveyor 907 in the workpiece carry-in / out chamber 901. In this manner, the package 20 of FIG. 2 subjected to the sealing process is obtained by the package manufacturing apparatus 900.

  In the above description, the flow of the sealing process for one tray 1000 in the package manufacturing apparatus 900 has been described. However, in the package manufacturing apparatus 900, a plurality of trays 1000 are continuously loaded at predetermined intervals during one operation. Then, the above-described processes are performed on the packages 20 arranged on the respective trays 1000. Therefore, the package manufacturing apparatus 900 can continuously manufacture a plurality of the packages 20 of FIG.

  As described above, according to the package manufacturing apparatus 900 according to the present embodiment, the package manufacturing method according to the first embodiment or the second embodiment is performed. The effects described above are realized.

  In particular, according to the package manufacturing apparatus 900, the upper heating member 1102 of the heating apparatus 1100 can be heated by being in direct contact with the surface of the package 20, and when the heating apparatus 1200 is used, further lower heating is performed. The member 1201 can be heated by directly contacting the back surface of the tray 1000. Further, when the heating device 1200 a is used, the push-up member 1204 can reliably heat the surface of the package 20 in contact with the upper heating member 1102. Therefore, heating can be performed efficiently even in the vacuum chamber 906.

  In the package manufacturing apparatus 900, the upper cooling member 1302 of the cooling device 1300 can be cooled by directly contacting the surface of the package 20, and the lower cooling member 1303 is directly contacted by the back surface of the tray 1000 for cooling. It becomes possible to do. Further, when the cooling device 1300a is used, the push-up member 1306 can reliably cool the surface of the package 20 in contact with the upper cooling member 1302. Therefore, efficient cooling can be performed even in the vacuum chamber 906.

  Further, the package manufacturing apparatus 900 according to the present embodiment has a configuration in which the tray 1000 is carried in and out using the same conveyance path 905 with the vacuum processing chamber 904 as the turning point, and therefore, when the tray 1000 is carried in and out. In some cases, the vacuum preparatory chamber 902 and the work loading / unloading chamber 901 of the transfer path 905 can be used in common.

  Therefore, in the linear type package manufacturing apparatus of FIG. 18 of Embodiment 4 described later, it is necessary to separately arrange the vacuum preliminary chambers 1402 and 1404, the workpiece carry-in chamber 1401 and the workpiece carry-out chamber 1405 in the conveyance path. In the package manufacturing apparatus 900 of the present embodiment, one vacuum preliminary chamber 902 and a work loading / unloading chamber 901 may be provided. As described above, in the package manufacturing apparatus 900 according to the present embodiment, the number of processing chambers in the apparatus can be reduced, and the components of the processing chamber can be reduced as the number of processing chambers decreases. For example, it is possible to reduce the number of arranged exhaust means, carry-in means, carry-out means, etc., simplify the configuration, and the like.

  Furthermore, in the package manufacturing apparatus 900 of the present embodiment, the tray 1000 carried into the chamber 906 of the vacuum processing chamber 904 is accurately placed at a predetermined position of the rotary table 908 using the positioning holes 1003 in FIG. In such a state that the arrangement is maintained, the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913 are supplied.

  Therefore, in the heating unit 911, the cooling unit 912, and the laser beam irradiation unit 913, the tray 1000 can be surely arranged at an optimum position for each process, and thus each process is effectively performed. In particular, in the secondary welding step S6 of FIG. 1 in the laser beam irradiation unit 913, it is necessary to accurately irradiate the desired part of the package 20 with the laser beam 40, and thus the tray 1000 is accurately placed at an appropriate position. The effect by arranging is great. When the package manufacturing apparatus 900 uses the heating apparatus 1200a shown in FIG. 14 or the cooling apparatus 1300a shown in FIG. 17, the push-up pins 1204a (see FIG. 15) of the push-up members 1204 and 1306 are the openings 1002 of the tray 1000. Therefore, it is necessary to dispose the tray 1000 so as to penetrate through, and thus the effect of disposing the tray 1000 at an appropriate position with high accuracy is great.

  In the above description, the tray 1000 is transported fully automatically. However, the tray 1000 may be supplied semi-automatically. Further, the shape of the rotary table 908 and the number of trays 1000 arranged on the rotary table 908, the processing time in each processing unit 911 to 913, and the like are not limited to the above. Further, the tray 1000 used in the package manufacturing apparatus 900 is not limited to the above-described configuration, and other configurations, for example, the configuration in which the number of the package accommodation units 1002 in FIG. Also good.

(Embodiment 4)
FIG. 18 is a schematic diagram showing the configuration of the package manufacturing apparatus according to the fourth embodiment of the present invention. As shown in FIG. 18, the package manufacturing apparatus according to the present embodiment is a linear type in which the tray 1000 of FIG. 11 that is a processing target (work) is conveyed in one direction.

  Specifically, in the package manufacturing apparatus of the present embodiment, the workpiece carry-in chamber 1401, the vacuum preliminary chamber 1402, the vacuum processing chamber 1403, the vacuum preliminary chamber 1404, and the workpiece carry-out chamber 1405 are arranged along one direction. They are arranged sequentially. A door 1406 is disposed between the workpiece carry-in chamber 1401 and the vacuum preparatory chamber 1402, and a double door 1407 is disposed between the vacuum preparatory chamber 1402 and the vacuum processing chamber 1403. A double door 1408 is disposed between the processing chamber 1403 and the vacuum preparatory chamber 1404, and a door 1409 is disposed between the vacuum preparatory chamber 1404 and the workpiece carry-out chamber 1405.

  Inside the vacuum processing chamber 1403, a heating unit 1411, a cooling unit 1412, and a laser beam irradiation unit 1413 are provided in this order from the vacuum preliminary chamber 1402 side. As in the case of the package manufacturing apparatus 900 of FIG. 10 of Embodiment 3, the heating unit 1411, the cooling unit 1412, and the laser beam irradiation unit 1413 in the vacuum processing chamber 1403 are not particularly partitioned by a partition wall or the like. .

  Although not shown here, the heating unit 1411 is provided with a heating device, the cooling unit 1412 is provided with a cooling device, and the laser beam irradiation unit 1413 is provided with a laser beam irradiation device. . Here, any one of the heating devices 1100, 1200, and 1200a of FIG. 12, FIG. 13, or FIG. 14 included in the package manufacturing apparatus 900 of Embodiment 3, and any of the cooling devices 1300 and 1300a of FIG. 16 or FIG. Eleven laser beam irradiation devices 909 are provided.

  Although not shown in the drawing, a tray carrying conveyor is provided in each of the workpiece carry-in chamber 1401, the vacuum preliminary chamber 1402, the vacuum processing chamber 1403, the vacuum preliminary chamber 1404, and the workpiece carry-out chamber 1405, In addition, the vacuum preliminary chamber 1402, the vacuum processing chamber 1403, and the vacuum preliminary chamber 1404 are provided with exhaust means for realizing a vacuum state.

  In the package manufacturing apparatus of the present embodiment, first, with the door 1406 opened, the package 20 of FIG. 3 or the package 20 of FIG. 7 is placed in the package housing portion 1002 via the work carry-in chamber 1401. The arranged tray 1000 of FIG. 11 is conveyed. At this time, at least the door 1407 is closed (in this embodiment, the doors 1408 and 1409 are also closed), and the insides of the vacuum processing chamber 1403 and the vacuum preliminary chamber 1404 are kept in a vacuum state. When the tray 1000 (see FIG. 11) is transported to the vacuum preliminary chamber 1402, the door 1406 is closed and the room is evacuated, so that the vacuum preliminary chamber 1402 is in a vacuum state similar to the vacuum processing chamber 1403 and the like.

  When the vacuum state is realized in the vacuum preliminary chamber 1402 as described above, the door 1407 is opened, and the tray 1000 (see FIG. 11) is transferred from the vacuum preliminary chamber 1402 to the vacuum processing chamber 1403. And in each processing part 1411-1413 of the vacuum processing chamber 1403, the process similar to each processing part 911-913 of the vacuum processing chamber 904 of Embodiment 3 is performed, and the package 20 is sealed as shown in FIG. The

  When the sealing process is completed in the vacuum processing chamber 904, the door 1408 is opened. Then, the tray 1000 (see FIG. 11) is conveyed to the vacuum preliminary chamber 1404. Thereafter, the door 1408 is closed and the door 1409 is opened to open the vacuum preliminary chamber 1404 to the atmosphere. Then, the tray 1000 is further transferred from the vacuum preliminary chamber 1404 to the workpiece carry-out chamber 1405, and the package 20 of FIG.

  According to the package manufacturing apparatus of the present embodiment as described above, the package manufacturing method according to the first embodiment or the second embodiment is performed. Therefore, the effects described in the first and second embodiments are provided. Is realized. Therefore, the same effect as the package manufacturing apparatus of the third embodiment can be obtained.

  The above-described first to fourth embodiments are examples of the method and apparatus for manufacturing a package according to the present invention, and are not limited to these. For example, in the first embodiment, the case where the welding of the container 2 and the lid 3 is performed twice, that is, the primary welding process step S3 and the secondary welding process step S6 in FIG. 1 are performed has been described. However, you may weld the container 2 and the cover body 3 by one process as follows.

  That is, the annealing process S3 and the cooling process of the package 20 (see FIG. 2) that has been completed up to step S2 in FIG. 1 and the lid 3 is temporarily attached to the container 2 without performing the primary welding process step S3 in FIG. The package 20 may be used in order, and then the package 20 may be completely sealed in one process by irradiating the entire outer periphery of the lid 3 with the electron beam in the welding process of step S6. Alternatively, in the welding process of step S6, first, a primary sealing process (ie, primary welding) is performed, and after evacuating in a vacuum atmosphere for about 10 seconds, a secondary sealing process (ie, secondary welding) is subsequently performed. The package 20 may be completely sealed.

  In a package manufacturing apparatus to which a manufacturing method for performing complete sealing in one process is applied, for example, the vacuum processing chamber 904 in FIG. 10 includes an electron beam irradiation unit instead of the laser beam irradiation unit 913. In such an apparatus, the package 20 that has undergone the processing up to step S2 in FIG. 1 is placed on the tray 1000 and loaded.

  In the first to fourth embodiments described above, the case where the electronic component sealing body (package 20) houses the tuning fork type crystal resonator 1 in the container 2 has been described. It may be stored. Furthermore, the present invention is applicable not only to the crystal resonator 1 but also to an electronic component sealing body configured to store other electronic components. For example, you may apply this invention to the electronic component sealing body which accommodates a piezoelectric vibrator, an integrated circuit, a SWA filter, etc. in a container. Furthermore, the present invention can also be applied to an electronic component sealing body having a shape other than a quadrangle.

  As described above, the method and apparatus for manufacturing an electronic component sealed body according to the present invention are useful for manufacturing an electronic component sealed body capable of maintaining the interior in a high vacuum, and the internal vacuum state is stored in particular. It is suitable for manufacturing an electronic component sealing body that greatly affects the characteristics and reliability of the manufactured device, for example, an electronic component sealing body containing a crystal resonator or the like.

It is a flowchart which shows the outline | summary of the manufacturing method of the package concerning Embodiment 1 of this invention. It is typical sectional drawing which shows the structure of the package manufactured with the manufacturing method of FIG. It is a typical top view which shows the beam irradiation method in the primary welding process of the manufacturing method of FIG. It is a typical top view which shows the beam irradiation method in the secondary welding process of the manufacturing method of FIG. It is a figure which shows the temperature change of the package in each process of the package manufacturing method of Embodiment 1. FIG. It is a bottom part top view of the container used for the manufacturing method of the package concerning Embodiment 2 of this invention. It is typical sectional drawing for demonstrating the manufacturing method of the package concerning Embodiment 2 of this invention. It is typical sectional drawing for demonstrating the manufacturing method of the package concerning Embodiment 2 of this invention. It is typical sectional drawing for demonstrating the manufacturing method of the package concerning Embodiment 2 of this invention. It is a top view from the apparatus upper side which shows typically the whole structure of the package manufacturing apparatus concerning Embodiment 3 of this invention. It is a top view which shows typically the structure of the tray used for the package manufacturing apparatus of FIG. It is typical sectional drawing which shows the structure of the vacuum processing chamber in the XI-XI line of FIG. It is typical sectional drawing which shows the other structure of a heating apparatus. It is typical sectional drawing which shows other structure of a heating apparatus. It is the elements on larger scale which show the detailed structure of the heating apparatus of FIG. It is typical sectional drawing of the vacuum processing chamber in the XIII-XIII line | wire of FIG. It is typical sectional drawing which shows the other structure of a cooling device. It is a schematic diagram which shows the structure of the package manufacturing apparatus concerning Embodiment 4 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Crystal oscillator 2 Container 3 Cover body 4 Sealing material 10 Electron beam 15 Unwelded part 20 Package 40 Laser beam 500 Through-hole 600 Through-hole sealing material 900 Package manufacturing apparatus 901 Work carrying in / out chamber 902, 1402, 1404 Chamber 903 Work delivery chamber 904, 1403 Vacuum processing chamber 905 Transfer path 906 Chamber 907 Conveyor 908 Rotating table 909 Laser beam irradiation device 910 Delivery unit 911 Heating unit 912 Cooling unit 913 Laser beam irradiation unit 914, 915, 1406 to 1409 Door 916 Unloading port 917 Delivery table 1000 Tray 1100, 1200 Heating device 1102 Upper heating member 1103, 1201 Lower heating member 1300 Cooling device 1302 Upper cooling member 1303 Lower cooling member

Claims (17)

A container in which an electronic component is housed in an internal housing portion through the opening; and a lid that is joined to a periphery of the opening to cover the opening of the container, the container and the lid A method of manufacturing an electronic component sealing body that is sealed by melting a sealing material disposed in a joint portion with
An annealing step of heating and annealing the unsealed electronic component sealing body in which the communication portion between the container and the outside of the container is formed at least in part,
A cooling step of cooling the unsealed electronic component sealing body after the annealing step;
A beam beam welding step for completely sealing the unsealed electronic component sealing body after the cooling step by beam welding the communication portion;
The manufacturing method of the electronic component sealing body characterized by including.   In the annealing step, the unsealed electrons are at a temperature lower than the melting temperature of the sealing material at the joint and equal to or higher than the processing temperature in the processing of the electronic component sealing body after the communicating portion beam welding step. The method for manufacturing an electronic component sealing body according to claim 1, wherein the component sealing body is heated.   In the cooling process, the temperature of the unsealed electronic component sealed body in the communication portion beam welding process is less than the temperature of the unsealed electronic component sealed body in the annealing process as a whole. The method of manufacturing an electronic component sealing body according to claim 1 or 2, wherein the stationary electronic component sealing body is cooled.   4. The manufacturing of the electronic component sealing body according to claim 1, wherein each of the treatments is performed in a vacuum atmosphere in the annealing step, the cooling step, and the communication portion beam welding step. 5. Method.   5. A communication part forming step of beam welding a predetermined region of the joint part to form an unwelded portion that is the communication part in a region of the joint part other than the predetermined region. The manufacturing method of the electronic component sealing body as described in any one of these. The container previously has a through hole as the communication portion, and further includes a through hole sealing material loading step of loading the through hole with a through hole sealing material, before or after the annealing step,
The said communicating part beam welding process WHEREIN: A beam is irradiated to the said through-hole sealing material, The said through-hole is filled and sealed by the said through-hole sealing material which fuse | melted, The one of Claims 1-4 characterized by the above-mentioned. The manufacturing method of the electronic component sealing body as described in one. The container has a through hole in advance as the communication portion, and further includes a through hole sealing material loading step of loading the through hole with a through hole sealing material, before or after the cooling step,
The said communicating part beam welding process irradiates a beam to the said through-hole sealing material, The said through-hole is filled and sealed with the said through-hole sealing material fuse | melted, The any one of Claims 1-4 characterized by the above-mentioned. The manufacturing method of the electronic component sealing body as described in one.   The method for manufacturing an electronic component sealing body according to claim 6 or 7, wherein the through-hole sealing material is substantially spherical. A container in which an electronic component is housed in an internal housing portion through the opening; and a lid that is joined to a periphery of the opening to cover the opening of the container, the container and the lid An electronic component sealing body manufacturing apparatus that is sealed by melting a sealing material disposed at a joint with
Annealing in which the unsealed electronic component sealing body having at least a part of the communication portion between the housing portion and the outside of the container is supplied and annealed by heating the unsealed electronic component sealing body Means,
Cooling means for cooling the unsealed electronic component sealing body treated by the annealing means;
A beam-welding unit for communicating part that completely welds the communicating part of the unsealed electronic component sealed body cooled by the cooling unit by beam welding;
An apparatus for manufacturing an electronic component sealing body, comprising:   The apparatus for manufacturing an electronic component sealing body according to claim 9, wherein the annealing means, the cooling means, and the communicating portion beam welding means are provided in one vacuum processing chamber.   The holding means on which a plurality of the unsealed electronic component sealing bodies are mounted is sequentially supplied to the annealing means, the cooling means, and the communicating portion beam welding means. The manufacturing apparatus of the electronic component sealing body of description. The annealing means has a heating member that directly contacts at least one of the surface of the unsealed electronic component sealing body and the surface of the holding means,
The cooling unit includes a cooling member that directly contacts at least one of a surface of the unsealed electronic component sealing body and a surface of the holding unit. The manufacturing apparatus of the electronic component sealing body of description.   13. The annealing means further includes a pressing member that presses each of the plurality of unsealed electronic component sealing bodies mounted on the holding means to contact the heating member. The manufacturing apparatus of the electronic component sealing body of description.   13. The cooling means further includes a pressing member that presses each of the plurality of unsealed electronic component sealing bodies mounted on the holding means to contact the cooling member. The manufacturing apparatus of the electronic component sealing body of description.   The vacuum processing chamber is provided with a rotary conveying means that sequentially arranges the holding means on the surface and supplies the holding means to the annealing means, the cooling means, and the communicating portion beam welding means as it rotates. The manufacturing apparatus of the electronic component sealing body as described in any one of Claims 11-14. A transport path communicating with the vacuum processing chamber;
The holding means carried in from the outside of the apparatus and moved on the transfer path and arranged in the rotary transfer means of the vacuum processing chamber was sequentially supplied to the annealing means, the cooling means, and the communicating portion beam welding means. The apparatus for manufacturing an electronic component sealed body according to any one of claims 11 to 15, wherein after that, the conveyance path is moved again in a direction opposite to that at the time of carrying in and carried out of the apparatus. The manufacturing apparatus of the electronic component sealing body according to any one of claims 9 to 16, further comprising a vacuum preliminary chamber communicating with the vacuum processing chamber.

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