TWI241995B - semiconductor ceramic and resistance element using the same - Google Patents
semiconductor ceramic and resistance element using the same Download PDFInfo
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- TWI241995B TWI241995B TW089114718A TW89114718A TWI241995B TW I241995 B TWI241995 B TW I241995B TW 089114718 A TW089114718 A TW 089114718A TW 89114718 A TW89114718 A TW 89114718A TW I241995 B TWI241995 B TW I241995B
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- Prior art keywords
- semiconductor ceramic
- resistance
- temperature
- barium titanate
- temperature coefficient
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000000919 ceramic Substances 0.000 title claims abstract description 34
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 14
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 14
- 239000011734 sodium Substances 0.000 claims abstract description 14
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 13
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12729—Group IIA metal-base component
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
A7 B7 I24P-:. :…」」yy 五、發明説明(1 ) 發明背景 1. 發明領域 本發明係關於一種鈦酸鋇半導體陶瓷,更特定言之,本 發明係關於一種具有正電阻溫度係數之鈦酸鋇半導體陶 瓷,及以其製成之半導體陶瓷裝置。 2. 相關技藝描述 具有正電阻溫度特性(PTC特性)之鈦酸鋇半導體陶瓷(其 中,其於室溫下之電阻係數係低的,而在一特定溫度(居里 溫度(the curie temperature))以上,電阻則會快速上升)係廣 泛使用於溫度控制、電流控制、恆溫加熱等方面,於上述 應用中,係需要一種用於線路中之過流保護裝置,當受到 衝擊時,其必1須具有較低之電阻,且具有一高的耐受電壓。 與本發明相關之一項習知技術係揭示於日本未經實審專 利申請案公開號第8-217536號中,此習知技術係著眼於鈦 酸鋇半導體陶瓷中所含之鈉含量,且揭示鈦酸鋇半導體陶 瓷之電阻可藉由添加0.0005至0.02重量%至其中而調整。 因此,根據上述之習知技術,倘若一經烘烤的底材之電阻 因烘烤溫度之變化而改變,則最終之半導體陶瓷組合物之 電阻便可藉由添加0.0005至0.02重量%之鈉含量而予調整。 此外,上面所述之公開案中係揭示,耐受電壓可藉由添 加用量為0.03重量%或更多之鋼而下降。 該公開案中所描述之習知技術與半導體陶瓷中所含晶體 之粒徑無關。 然而,當著眼於該對較低電阻及較高耐受電壓之需求 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
裝 訂
1241995 ......
時,本發明之發明人發現到,倘僅藉由如上所描述的控制 鈉含量則無法總是獲得所欲之電阻及耐受電壓。 發明簡述 因此,本發明目的之一在於提供一種半導體陶瓷,其除 了具有一較低電阻及一較高耐受電壓之外,尚具有一正電 阻溫度係數。本發明另提供一種以上述之半導體陶瓷製成 之半導體陶瓷裝置。 本發明之半導體陶瓷係具有一正電阻溫度係數,且包含 鈦酸鋇作為主要組成份,以及含有鈉。為解決上面所描述 之問題,該半導體陶瓷之平均粒徑係自7至1 2 μιη,而鈉含 量係,以基重為基底,為70份每百萬份(以後稱為ppm)或 更少。 _ 此外,本發明可使用於一包含由上面所描述的半導體陶 瓷所構成之主體、及置於該主體上之電極所構成之半導體 陶瓷裝置中 圖示簡述 圖1係含有根據本發明之一項具體實施例的具有正電阻 溫度特性之熱變電阻器之剖面圖。 具體實施例之描述 圖1係含有根據本發明之一項具體實施例的具有正電阻 溫度特性之熱變電阻器1之剖面圖。 該具有正電阻溫度特性之熱變電阻器1係包含一主體2, 其係由具有正電阻溫度係數之半導體陶瓷所構成。該主體2 係例如碟片,其主要表面上係安置了電極3及4。 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
裝 訂
A7 B7 124,价 五、發明説明(3 ) 於該具有正電阻溫度特性之熱變電阻器1中,該形成主 體2之半導體陶瓷係包含鈦酸鋇作為主要組成份,以及含 有以重量為基底、為70 ppm或更少之鈉,該半導體陶资之 平均粒徑係自7至12 /πη。此外,銦-鎵(In-Ga)電極係用以 作為電極3及4。 由於使用具有如上所述之平均粒徑及鈉含量之半導體陶 資:,該具有正電阻溫度特性之熱變電阻器1可製成其中電 阻溫度係數相當高、電阻相當低且耐受電壓相當高者。 自此往下,本發明將以實例更詳細描述之,以驗證上述 優點。 實例 為製備主要由鈦酸鋇構成之半導體陶瓷(其係用以作為一 具有正電阻溫度特性之熱變電阻器主體),含不同鈉不純物 含量之 BaC03、Ti02、PbO、SrC03、CaC〇3、Sm2〇3、MnC〇3 及Si〇2係事先準備且予濕式混合,以製得預定之組合物。 由此獲得之組合物係經脫水、乾燥並於丨,丨5(rc下烘烤,隨 後,添加黏合劑於各經烘烤之混合物中,並自彼等製備丸 狀物。 接著,將丸狀物進行單軸模塑,由此獲得之模製物件係 於1,3 50 C下、於^/Ν2還原氣氛中或n2中性氣氛中烘 烤,然後於1,150°C之溫度下氧化。 透過此等步驟,係獲得呈〇.5mm厚及直徑u〇mm之碟 片形式、由半導體陶瓷所構成之主體,彼等具有如表1中 所列之不同平均粒徑及不同鈉含量。該半導體陶瓷之平均 本紙張尺度適财國时鮮(CNS) Μ規格(21GX297公梦)-------------- 12419S5 : b?_ 丘、( 4 ) 粒徑係以/截面方法、使用所獲得主體表面之掃瞄電子顯 微照片而制量。此外,鈉含量係藉由一原子吸收方法而測 ° 另外,為測量如表1中所列的各樣本之電性,係在該主 體之兩支要表面形成銦-鎵(In-Ga)電極,然後測量室溫下之 電阻(p25)、耐受電壓及電阻溫度係數(c〇。電阻溫度係數(°0 係由下列方程式計算·· {][n(pi/p2)/(T2.T1)}xlOO(%/〇C ) 其中p 1係立溫下之電阻(p25)之1 0倍電阻,Τι係此時之 溫度,Ρ2係室溫下之電阻(Ρ25)之100倍電阻,Τ2係此時之 溫度。 室溫下之電阻、耐受電壓及電阻溫度係數係列於下面表1 中0 表1 樣本 粒徑 (μηι) 鈉含量 (ppm) 電阻 (Ω . cm) 耐受電壓 (V/mm) 電阻溫度 係數 (%/°C ) ※1 _ 5.9 6 3.7 87 9.7 2 7.0 7 3.2 82 9.6 3 9.0 6 2.0 67 10.2 4 1 1.4 10 1.4 52 10.6 ※5 13.2 11 1.1 42 11.3 6 9.2 35 2.2 69 10.4 ※7 5.5 42 4.4 100 9.6 ※8 6.4 46 4.0 90 10.0 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 1241m
五、發明説明(5 裝 訂 線
认本 -------- 上‘ ·} ; 中,以※標記之樣本係超出本發明範圍以外者。 根據包含於本發明範圍内之樣本2至4、6、9至13、17 及1 8由於平均粒徑係自7至12 /xm,而鋼含量係以重量 為基底、為70 ppm或更少,因此可獲得一其中電阻為35 Ω cm更少、耐受電壓係5〇 V/mm或更多及室溫下之電阻溫 度係數係9%/°C或更多之具有正電阻溫度特性之熱變電阻 8- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) A7 B7 I2419«5 # (nlou ^ ———補充丨 五、發明説明(6 ) 器。 相反地,當平均粒徑小於7 μιη時,電阻便會上升,另一 方面,當平均粒徑超過12 μιη時,耐受電壓便會下降。尤 其,如樣本1、7、8、15及20中所可見,當平均粒徑小於 7 /xm時’電阻係超過3 · 5 Ω . cm,相反地,如樣本5、14、 1 9及26中所可見,當平均粒徑超過i2 μιη時,耐受電壓係 小於 50 V/mm。 此外,當鈉含量係超過以重量為基底之70 ppm時,電阻 同樣地會上升,尤其,如樣本20至25中所可見,當鋼含 量係超過以重量為基底之70 ppm時,電阻係超過3.5 Ω cm。 如上所述,在由半導體陶瓷所構成之主體中,當平均粒 徑及鈉含量落在上面界定之範圍内時,應了解,係可獲得 為3·5 Ω· cm更少之電阻及為50 V/mm或更多之耐受電壓。 因此,如上所述,本發明之具有一正電阻溫度特性之半 導體陶瓷,係包含鈦酸鋇作為主要組成份,以及含有含量 為以重量為基底之70 ppm或更少的鈉,且該半導體陶瓷之 平均粒徑係自7至1 2 μιη。據此,對於一含由半導體陶瓷構 成之主體以及安置於其上之電極之半導體陶瓷裝置,應了 解,其係具有3.5 Ω· cm更少之電阻及為50 V/mm或更多之 耐受電壓,且同時達成一 9%/°C或更多之電阻溫度係數。 -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
裝 訂
Claims (1)
- A B c D1241髮礙H4718號專利申請案 中文申請專利範圍替換本(93年9月) 六、申請專利範圍 1. 一種具有一正電阻溫度特性之半導體陶瓷,其包含: 鈦酸鋇作為主要組成份;以及 以重量為基底,含量為70 ppm或更少之鈉; 其中,該半導體陶瓷之平均粒徑係自7至1 2 /xm。 2. —種正溫度特性電阻元件,其包含: 根據申請專利範圍第1項之半導體陶瓷之主體;及 安置於該主體上之電極。 65299-930909 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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Application Number | Priority Date | Filing Date | Title |
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JP11227386A JP2001048643A (ja) | 1999-08-11 | 1999-08-11 | 半導体磁器および半導体磁器素子 |
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TWI241995B true TWI241995B (en) | 2005-10-21 |
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TW089114718A TWI241995B (en) | 1999-08-11 | 2000-07-24 | semiconductor ceramic and resistance element using the same |
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US (1) | US6432558B1 (zh) |
JP (1) | JP2001048643A (zh) |
KR (1) | KR100340667B1 (zh) |
DE (1) | DE10038686A1 (zh) |
TW (1) | TWI241995B (zh) |
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JP2001130957A (ja) * | 1999-11-02 | 2001-05-15 | Murata Mfg Co Ltd | 半導体磁器、半導体磁器の製造方法およびサーミスタ |
JP3554786B2 (ja) * | 2000-12-05 | 2004-08-18 | 株式会社村田製作所 | 半導体セラミック、消磁用正特性サーミスタ、消磁回路、および半導体セラミックの製造方法 |
CN111971759B (zh) | 2018-04-17 | 2023-05-02 | 京瓷Avx元器件公司 | 用于高温应用的变阻器 |
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JPS54105113A (en) * | 1978-02-06 | 1979-08-17 | Ngk Insulators Ltd | Barium titanate base positive characteristic porcelain |
DE3413585A1 (de) * | 1984-04-11 | 1985-10-24 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung keramischer sinterkoerper |
US5242674A (en) * | 1988-10-27 | 1993-09-07 | E. I. Du Pont De Nemours And Company | Process for preparing crystalline mixed metal oxides |
US5082811A (en) * | 1990-02-28 | 1992-01-21 | E. I. Du Pont De Nemours And Company | Ceramic dielectric compositions and method for enhancing dielectric properties |
US5225126A (en) * | 1991-10-03 | 1993-07-06 | Alfred University | Piezoresistive sensor |
JPH08217536A (ja) | 1995-02-14 | 1996-08-27 | Tdk Corp | 正の抵抗温度係数を有する半導体磁器組成物及びその製造方法 |
JP3175102B2 (ja) * | 1996-05-20 | 2001-06-11 | 株式会社村田製作所 | 正特性サーミスタ素体および正特性サーミスタ |
CN1137054C (zh) * | 1998-05-20 | 2004-02-04 | 东邦钛株式会社 | 钛酸钡粉末 |
EP1013609A4 (en) * | 1998-05-20 | 2007-12-19 | Toho Titanium Co Ltd | PROCESS FOR PRODUCING BARIUM TITANATE POWDER |
-
1999
- 1999-08-11 JP JP11227386A patent/JP2001048643A/ja active Pending
-
2000
- 2000-07-24 TW TW089114718A patent/TWI241995B/zh not_active IP Right Cessation
- 2000-08-08 DE DE10038686A patent/DE10038686A1/de not_active Withdrawn
- 2000-08-08 US US09/634,086 patent/US6432558B1/en not_active Expired - Lifetime
- 2000-08-09 KR KR1020000046098A patent/KR100340667B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR20010039801A (ko) | 2001-05-15 |
JP2001048643A (ja) | 2001-02-20 |
DE10038686A1 (de) | 2001-03-15 |
US6432558B1 (en) | 2002-08-13 |
KR100340667B1 (ko) | 2002-06-15 |
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