TWI240435B - Radiation-emitting semiconductor-component - Google Patents

Radiation-emitting semiconductor-component Download PDF

Info

Publication number
TWI240435B
TWI240435B TW093118424A TW93118424A TWI240435B TW I240435 B TWI240435 B TW I240435B TW 093118424 A TW093118424 A TW 093118424A TW 93118424 A TW93118424 A TW 93118424A TW I240435 B TWI240435 B TW I240435B
Authority
TW
Taiwan
Prior art keywords
layer
doped
radiation
emitting semiconductor
component
Prior art date
Application number
TW093118424A
Other languages
English (en)
Other versions
TW200501463A (en
Inventor
Rainer Butendeich
Norbert Linder
Bernd Mayer
Ines Pietzonka
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200501463A publication Critical patent/TW200501463A/zh
Application granted granted Critical
Publication of TWI240435B publication Critical patent/TWI240435B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Description

1240435 該發光一極體之活性層（3 6)是由量子井或多重量子井所 形成。 7 ·如申請專利範圍第1項之發出輻射之半導體組件，其中 該半導體組件是一種雷射二極體（1〇)，其中在該活性層（18) 和I該η-摻雜之侷限層（14)之間配置第一波導層（16)且在該 活性層（18)和該ρ-摻雜之侷限層（22)之間配置第二波導層 (20卜 8.如申請專利範圍第7項之發出輻射之半導體組件，其中 % —波導層（16)未摻雜。 9 ·如申請專利範圍第7項之發出輻射之半導體組件，其中 第一波導層（16)以第二η-摻雜物質來摻雜。 10·如申請專利範圍第7項之發出輻射之半導體組件，其中 第二波導層（20)未摻雜。 1 1 ·如申請專利範圍第1項之發出輻射之半導體組件，其中 使用砂作爲第一 η-摻雜物質。 1 2 ·如申請專利範圍第1項之發出輻射之半導體組件，其中 使用碲作爲第二η·摻雜物質。 1 3 ·如申請專利範圍第1項之發出輻射之半導體組件，其中 Ρ-摻雜之侷限層（2 2; 38)是以鎂，碳或鋅來摻雜。 1 4 ·如申請專利範圍第1項之發出輻射之半導體組件，其中 形成各種以 AlInGaP，AlGaAs，InGaAlAs 或 InGaAsP 爲主 之層結構（14-22; 34-38)。
TW093118424A 2003-06-27 2004-06-25 Radiation-emitting semiconductor-component TWI240435B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10329079.6A DE10329079B4 (de) 2003-06-27 2003-06-27 Strahlungsemittierendes Halbleiterbauelement

Publications (2)

Publication Number Publication Date
TW200501463A TW200501463A (en) 2005-01-01
TWI240435B true TWI240435B (en) 2005-09-21

Family

ID=33546690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118424A TWI240435B (en) 2003-06-27 2004-06-25 Radiation-emitting semiconductor-component

Country Status (8)

Country Link
US (1) US7629670B2 (zh)
EP (2) EP1642347B1 (zh)
JP (1) JP5150099B2 (zh)
KR (1) KR101087803B1 (zh)
CN (1) CN100539211C (zh)
DE (3) DE10329079B4 (zh)
TW (1) TWI240435B (zh)
WO (1) WO2005004244A2 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10329079B4 (de) 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US7473941B2 (en) * 2005-08-15 2009-01-06 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Structures for reducing operating voltage in a semiconductor device
FR3066616B1 (fr) * 2017-05-18 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Source de lumiere guidee, son procede de fabrication et son utilisation pour l'emission de photons uniques

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5790990A (en) * 1980-11-27 1982-06-05 Sharp Corp Semiconductor light emitting device
JPS59213179A (ja) * 1983-05-19 1984-12-03 Toshiba Corp 発光素子
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
EP0772247B1 (en) * 1994-07-21 2004-09-15 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
JP2666237B2 (ja) * 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
DE69602141T2 (de) * 1995-08-28 1999-10-21 Mitsubishi Cable Ind Ltd Lichtemittierende Vorrichtung auf Basis einer Nitridverbindung der Gruppe III
DE69636088T2 (de) * 1995-11-06 2006-11-23 Nichia Corp., Anan Halbleitervorrichtung aus einer Nitridverbindung
DE19630689C1 (de) * 1996-07-30 1998-01-15 Telefunken Microelectron Halbleiteranordnung und Verfahren zum Herstellen
US6072196A (en) * 1996-09-05 2000-06-06 Ricoh Company, Ltd. semiconductor light emitting devices
JP3643665B2 (ja) * 1996-12-20 2005-04-27 シャープ株式会社 半導体発光素子
TW406442B (en) * 1998-07-09 2000-09-21 Sumitomo Electric Industries White colored LED and intermediate colored LED
JP2000124552A (ja) * 1998-10-16 2000-04-28 Agilent Technol Inc 窒化物半導体レーザ素子
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants
US6324432B1 (en) * 1999-11-01 2001-11-27 Compex Sa Electrical neuromuscular stimulator for measuring muscle responses to electrical stimulation pulses
JP3585817B2 (ja) * 2000-09-04 2004-11-04 ユーディナデバイス株式会社 レーザダイオードおよびその製造方法
JP4416297B2 (ja) * 2000-09-08 2010-02-17 シャープ株式会社 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置
US20020104997A1 (en) * 2001-02-05 2002-08-08 Li-Hsin Kuo Semiconductor light emitting diode on a misoriented substrate
DE10329079B4 (de) 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US6907056B2 (en) * 2003-08-08 2005-06-14 Wisconsin Alumni Research Foundation Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency

Also Published As

Publication number Publication date
KR20060031646A (ko) 2006-04-12
KR101087803B1 (ko) 2011-11-29
WO2005004244A3 (de) 2005-04-21
EP1959507A1 (de) 2008-08-20
TW200501463A (en) 2005-01-01
DE502004007853D1 (de) 2008-09-25
JP5150099B2 (ja) 2013-02-20
DE502004010654D1 (de) 2010-03-04
WO2005004244A2 (de) 2005-01-13
EP1642347A2 (de) 2006-04-05
US20060284192A1 (en) 2006-12-21
US7629670B2 (en) 2009-12-08
EP1642347B1 (de) 2008-08-13
CN1813359A (zh) 2006-08-02
CN100539211C (zh) 2009-09-09
JP2007507083A (ja) 2007-03-22
DE10329079A1 (de) 2005-01-27
EP1959507B1 (de) 2010-01-13
DE10329079B4 (de) 2014-10-23

Similar Documents

Publication Publication Date Title
TWI282182B (en) Thin-film LED with an electric current expansion structure
JP5667206B2 (ja) 半導体材料ドーピング
TWI334620B (en) Methods of forming electronic devices including semiconductor mesa structures and conductivity junctions and related devices
US7671377B2 (en) Silicon based light emitting diode
Grabherr et al. Bottom-emitting VCSEL's for high-CW optical output power
Nishida et al. Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice
JP2009278056A (ja) 半導体発光素子
JP2011160007A5 (zh)
WO2005094271A3 (en) Colloidal quantum dot light emitting diodes
JP2008503072A5 (zh)
WO2009120990A3 (en) Ultraviolet light emitting diode/laser diode with nested superlattice
JP2007165535A5 (zh)
TWI240435B (en) Radiation-emitting semiconductor-component
JP5889452B2 (ja) Ｌｅｄ半導体素子
Zhu et al. AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
JP5430829B2 (ja) 超格子を有する半導体層構造およびオプトエレクトロニクスデバイス
US7982231B2 (en) Silicon-based light emitting diode using side reflecting mirror
Riuttanen et al. Diffusion injection in a buried multiquantum well light-emitting diode structure
US20160118534A1 (en) Semiconductor Layer Including Compositional Inhomogeneities
JP2011523219A5 (zh)
KR20120029171A (ko) 발광소자 및 그 제조방법
JP5249721B2 (ja) シリコン発光素子
Zhu et al. AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition
KR101382238B1 (ko) 반도체 발광 다이오드
JP2012060172A5 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees