TW200501463A - Radiation-emitting semiconductor-component - Google Patents

Radiation-emitting semiconductor-component

Info

Publication number
TW200501463A
TW200501463A TW093118424A TW93118424A TW200501463A TW 200501463 A TW200501463 A TW 200501463A TW 093118424 A TW093118424 A TW 093118424A TW 93118424 A TW93118424 A TW 93118424A TW 200501463 A TW200501463 A TW 200501463A
Authority
TW
Taiwan
Prior art keywords
layer
doped
radiation
component
emitting semiconductor
Prior art date
Application number
TW093118424A
Other languages
Chinese (zh)
Other versions
TWI240435B (en
Inventor
Rainer Butendeich
Norbert Linder
Bernd Mayer
Ines Pietzonka
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200501463A publication Critical patent/TW200501463A/en
Application granted granted Critical
Publication of TWI240435B publication Critical patent/TWI240435B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

In a radiation-emitting semiconductor-component with a layer-structure, which includes a n-doped confinement-layer (14), a p-doped confinement-layer (22), and a photons-emitting active layer (18) arranged between the n-doped confinement-layer (14) and the p-doped confinement-layer (22), it is designed in this invention that the n-doped confinement-layer (14) is doped with a 1st n-dopant (or 2 different n-dopants) to generate a high active doping and a sharp doping-profile, and the active layer (18) is doped with only a 2nd n-dopant, which is different from the 1st dopant), to improve the layer-quality of the active layer (18).
TW093118424A 2003-06-27 2004-06-25 Radiation-emitting semiconductor-component TWI240435B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10329079.6A DE10329079B4 (en) 2003-06-27 2003-06-27 Radiation-emitting semiconductor component

Publications (2)

Publication Number Publication Date
TW200501463A true TW200501463A (en) 2005-01-01
TWI240435B TWI240435B (en) 2005-09-21

Family

ID=33546690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118424A TWI240435B (en) 2003-06-27 2004-06-25 Radiation-emitting semiconductor-component

Country Status (8)

Country Link
US (1) US7629670B2 (en)
EP (2) EP1642347B1 (en)
JP (1) JP5150099B2 (en)
KR (1) KR101087803B1 (en)
CN (1) CN100539211C (en)
DE (3) DE10329079B4 (en)
TW (1) TWI240435B (en)
WO (1) WO2005004244A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10329079B4 (en) 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
US7473941B2 (en) 2005-08-15 2009-01-06 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Structures for reducing operating voltage in a semiconductor device
FR3066616B1 (en) * 2017-05-18 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives GUIDED LIGHT SOURCE, MANUFACTURING METHOD AND USE THEREOF FOR SINGLE PHOTON TRANSMISSION

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5790990A (en) * 1980-11-27 1982-06-05 Sharp Corp Semiconductor light emitting device
JPS59213179A (en) * 1983-05-19 1984-12-03 Toshiba Corp Light emitting element
JPH07254732A (en) * 1994-03-15 1995-10-03 Toshiba Corp Semiconductor light emitting device
US5751013A (en) * 1994-07-21 1998-05-12 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
JP2666237B2 (en) * 1994-09-20 1997-10-22 豊田合成株式会社 Group III nitride semiconductor light emitting device
EP0762516B1 (en) 1995-08-28 1999-04-21 Mitsubishi Cable Industries, Ltd. Group-III nitride based light emitter
CN1160801C (en) 1995-11-06 2004-08-04 日亚化学工业株式会社 Nitride semiconductor device
DE19630689C1 (en) * 1996-07-30 1998-01-15 Telefunken Microelectron Semiconductor device and manufacturing method
US6072196A (en) * 1996-09-05 2000-06-06 Ricoh Company, Ltd. semiconductor light emitting devices
JP3643665B2 (en) * 1996-12-20 2005-04-27 シャープ株式会社 Semiconductor light emitting device
TW406442B (en) * 1998-07-09 2000-09-21 Sumitomo Electric Industries White colored LED and intermediate colored LED
JP2000124552A (en) * 1998-10-16 2000-04-28 Agilent Technol Inc Nitride semiconductor laser element
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants
US6324432B1 (en) * 1999-11-01 2001-11-27 Compex Sa Electrical neuromuscular stimulator for measuring muscle responses to electrical stimulation pulses
JP3585817B2 (en) * 2000-09-04 2004-11-04 ユーディナデバイス株式会社 Laser diode and manufacturing method thereof
JP4416297B2 (en) * 2000-09-08 2010-02-17 シャープ株式会社 Nitride semiconductor light emitting element, and light emitting device and optical pickup device using the same
US20020104997A1 (en) * 2001-02-05 2002-08-08 Li-Hsin Kuo Semiconductor light emitting diode on a misoriented substrate
DE10329079B4 (en) 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
US6907056B2 (en) * 2003-08-08 2005-06-14 Wisconsin Alumni Research Foundation Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency

Also Published As

Publication number Publication date
EP1642347B1 (en) 2008-08-13
DE10329079B4 (en) 2014-10-23
WO2005004244A2 (en) 2005-01-13
US7629670B2 (en) 2009-12-08
DE502004007853D1 (en) 2008-09-25
CN1813359A (en) 2006-08-02
EP1642347A2 (en) 2006-04-05
US20060284192A1 (en) 2006-12-21
DE10329079A1 (en) 2005-01-27
JP2007507083A (en) 2007-03-22
TWI240435B (en) 2005-09-21
CN100539211C (en) 2009-09-09
EP1959507A1 (en) 2008-08-20
DE502004010654D1 (en) 2010-03-04
WO2005004244A3 (en) 2005-04-21
KR101087803B1 (en) 2011-11-29
EP1959507B1 (en) 2010-01-13
JP5150099B2 (en) 2013-02-20
KR20060031646A (en) 2006-04-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees