TWI237935B - Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers - Google Patents
Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers Download PDFInfo
- Publication number
- TWI237935B TWI237935B TW091137479A TW91137479A TWI237935B TW I237935 B TWI237935 B TW I237935B TW 091137479 A TW091137479 A TW 091137479A TW 91137479 A TW91137479 A TW 91137479A TW I237935 B TWI237935 B TW I237935B
- Authority
- TW
- Taiwan
- Prior art keywords
- mirror
- doped
- conversion
- semiconductor layer
- laser
- Prior art date
Links
- 239000000203 mixture Substances 0.000 claims abstract description 34
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 22
- 230000007704 transition Effects 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 31
- 230000003287 optical effect Effects 0.000 abstract description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- 230000031700 light absorption Effects 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/028,435 US6850548B2 (en) | 2001-12-28 | 2001-12-28 | Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200301605A TW200301605A (en) | 2003-07-01 |
| TWI237935B true TWI237935B (en) | 2005-08-11 |
Family
ID=21843427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091137479A TWI237935B (en) | 2001-12-28 | 2002-12-26 | Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6850548B2 (enExample) |
| EP (1) | EP1459417B1 (enExample) |
| JP (1) | JP4177262B2 (enExample) |
| KR (1) | KR100558320B1 (enExample) |
| CN (1) | CN1613170A (enExample) |
| AT (1) | ATE488039T1 (enExample) |
| DE (1) | DE60238275D1 (enExample) |
| TW (1) | TWI237935B (enExample) |
| WO (1) | WO2003058774A2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7245647B2 (en) * | 1999-10-28 | 2007-07-17 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode |
| US6975663B2 (en) * | 2001-02-26 | 2005-12-13 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode |
| US7590159B2 (en) * | 2001-02-26 | 2009-09-15 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode |
| WO2002084829A1 (en) * | 2001-04-11 | 2002-10-24 | Cielo Communications, Inc. | Long wavelength vertical cavity surface emitting laser |
| US7596165B2 (en) * | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
| US7920612B2 (en) * | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
| US7829912B2 (en) | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
| US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
| WO2006039341A2 (en) * | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
| US7826506B2 (en) | 2004-10-01 | 2010-11-02 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
| US8815617B2 (en) * | 2004-10-01 | 2014-08-26 | Finisar Corporation | Passivation of VCSEL sidewalls |
| KR100737609B1 (ko) * | 2005-09-29 | 2007-07-10 | 엘지전자 주식회사 | 수직 외부 공진형 표면 방출 광 펌핑 반도체 레이저 및 그제조방법 |
| JP4300245B2 (ja) * | 2006-08-25 | 2009-07-22 | キヤノン株式会社 | 多層膜反射鏡を備えた光学素子、面発光レーザ |
| US8527939B2 (en) * | 2006-09-14 | 2013-09-03 | Sap Ag | GUI modeling of knowledge base in a modeling environment |
| US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
| US8213474B2 (en) * | 2007-12-21 | 2012-07-03 | Finisar Corporation | Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption |
| CN102611000B (zh) * | 2012-03-23 | 2013-09-25 | 中国科学院长春光学精密机械与物理研究所 | 高效率非对称光场分布垂直腔面发射半导体激光器 |
| CN109716601B (zh) | 2016-08-08 | 2022-12-13 | 菲尼萨公司 | 经蚀刻的平坦化的竖直腔表面发射激光器 |
| CN110021875B (zh) | 2018-01-09 | 2022-05-13 | 苏州乐琻半导体有限公司 | 表面发射激光器器件和包括其的发光器件 |
| TWI827578B (zh) * | 2018-01-18 | 2024-01-01 | 英商Ｉｑｅ有限公司 | 用於雷射應用之多孔分佈式布拉格反射器 |
| EP3540879A1 (en) * | 2018-03-15 | 2019-09-18 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated tunnel junction |
| CN116207612B (zh) * | 2023-03-30 | 2025-11-25 | 扬州乾照光电有限公司 | 一种vcsel外延结构及其制作方法、vcsel芯片 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5170407A (en) | 1991-10-11 | 1992-12-08 | At&T Bell Laboratories | Elimination of heterojunction band discontinuities |
| US5745515A (en) * | 1996-07-18 | 1998-04-28 | Honeywell Inc. | Self-limiting intrinsically eye-safe laser utilizing an increasing absorption layer |
| US5764671A (en) * | 1996-10-21 | 1998-06-09 | Motorola, Inc. | VCSEL with selective oxide transition regions |
| US5848086A (en) * | 1996-12-09 | 1998-12-08 | Motorola, Inc. | Electrically confined VCSEL |
| JP3713956B2 (ja) * | 1998-05-29 | 2005-11-09 | 富士ゼロックス株式会社 | 面発光型半導体レーザ素子の製造方法 |
| US6301281B1 (en) | 1998-08-31 | 2001-10-09 | Agilent Technologies, Inc. | Semiconductor laser having co-doped distributed bragg reflectors |
| US6744805B2 (en) * | 2000-04-05 | 2004-06-01 | Nortel Networks Limited | Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers |
| US6611543B2 (en) * | 2000-12-23 | 2003-08-26 | Applied Optoelectronics, Inc. | Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same |
| US6693933B2 (en) * | 2001-03-15 | 2004-02-17 | Honeywell International Inc. | Vertical cavity master oscillator power amplifier |
| WO2002084829A1 (en) * | 2001-04-11 | 2002-10-24 | Cielo Communications, Inc. | Long wavelength vertical cavity surface emitting laser |
-
2001
- 2001-12-28 US US10/028,435 patent/US6850548B2/en not_active Expired - Lifetime
-
2002
- 2002-12-13 DE DE60238275T patent/DE60238275D1/de not_active Expired - Lifetime
- 2002-12-13 EP EP02798511A patent/EP1459417B1/en not_active Expired - Lifetime
- 2002-12-13 AT AT02798511T patent/ATE488039T1/de not_active IP Right Cessation
- 2002-12-13 CN CNA028261887A patent/CN1613170A/zh active Pending
- 2002-12-13 JP JP2003558979A patent/JP4177262B2/ja not_active Expired - Fee Related
- 2002-12-13 KR KR1020047010027A patent/KR100558320B1/ko not_active Expired - Fee Related
- 2002-12-13 WO PCT/US2002/039825 patent/WO2003058774A2/en not_active Ceased
- 2002-12-26 TW TW091137479A patent/TWI237935B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE60238275D1 (de) | 2010-12-23 |
| JP4177262B2 (ja) | 2008-11-05 |
| WO2003058774A3 (en) | 2004-03-25 |
| WO2003058774A2 (en) | 2003-07-17 |
| US6850548B2 (en) | 2005-02-01 |
| EP1459417A2 (en) | 2004-09-22 |
| CN1613170A (zh) | 2005-05-04 |
| KR20040093676A (ko) | 2004-11-06 |
| EP1459417B1 (en) | 2010-11-10 |
| KR100558320B1 (ko) | 2006-03-10 |
| US20030123513A1 (en) | 2003-07-03 |
| TW200301605A (en) | 2003-07-01 |
| ATE488039T1 (de) | 2010-11-15 |
| JP2005514796A (ja) | 2005-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |