CN1613170A - 用于垂直腔表面发射激光器的非对称分布布拉格反射器 - Google Patents

用于垂直腔表面发射激光器的非对称分布布拉格反射器 Download PDF

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Publication number
CN1613170A
CN1613170A CNA028261887A CN02826188A CN1613170A CN 1613170 A CN1613170 A CN 1613170A CN A028261887 A CNA028261887 A CN A028261887A CN 02826188 A CN02826188 A CN 02826188A CN 1613170 A CN1613170 A CN 1613170A
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CN
China
Prior art keywords
mirror
doped
transition
semiconductor layer
region
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Pending
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CNA028261887A
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English (en)
Chinese (zh)
Inventor
S·S·维拉里尔
R·H·约翰逊
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Finisar Corp
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Finisar Corp
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Publication of CN1613170A publication Critical patent/CN1613170A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
CNA028261887A 2001-12-28 2002-12-13 用于垂直腔表面发射激光器的非对称分布布拉格反射器 Pending CN1613170A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/028,435 2001-12-28
US10/028,435 US6850548B2 (en) 2001-12-28 2001-12-28 Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers

Publications (1)

Publication Number Publication Date
CN1613170A true CN1613170A (zh) 2005-05-04

Family

ID=21843427

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028261887A Pending CN1613170A (zh) 2001-12-28 2002-12-13 用于垂直腔表面发射激光器的非对称分布布拉格反射器

Country Status (9)

Country Link
US (1) US6850548B2 (enExample)
EP (1) EP1459417B1 (enExample)
JP (1) JP4177262B2 (enExample)
KR (1) KR100558320B1 (enExample)
CN (1) CN1613170A (enExample)
AT (1) ATE488039T1 (enExample)
DE (1) DE60238275D1 (enExample)
TW (1) TWI237935B (enExample)
WO (1) WO2003058774A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101132118B (zh) * 2006-08-25 2010-06-02 佳能株式会社 包含多层反射器的光学设备和垂直腔面发射激光器
CN110021875A (zh) * 2018-01-09 2019-07-16 Lg 伊诺特有限公司 表面发射激光器器件和包括其的发光器件
CN111630735A (zh) * 2018-01-18 2020-09-04 Iqe公司 用于激光器应用的多孔分布式布拉格反射器
CN112470352A (zh) * 2018-03-15 2021-03-09 通快光电器件有限公司 具有集成的隧道结的垂直腔面发射激光器装置
CN116207612A (zh) * 2023-03-30 2023-06-02 扬州乾照光电有限公司 一种vcsel外延结构及其制作方法、vcsel芯片

Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
US7245647B2 (en) * 1999-10-28 2007-07-17 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode
US6975663B2 (en) * 2001-02-26 2005-12-13 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode
US7590159B2 (en) * 2001-02-26 2009-09-15 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7829912B2 (en) 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7826506B2 (en) 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
KR100737609B1 (ko) * 2005-09-29 2007-07-10 엘지전자 주식회사 수직 외부 공진형 표면 방출 광 펌핑 반도체 레이저 및 그제조방법
US8527939B2 (en) * 2006-09-14 2013-09-03 Sap Ag GUI modeling of knowledge base in a modeling environment
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US8213474B2 (en) * 2007-12-21 2012-07-03 Finisar Corporation Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
CN102611000B (zh) * 2012-03-23 2013-09-25 中国科学院长春光学精密机械与物理研究所 高效率非对称光场分布垂直腔面发射半导体激光器
CN109716601B (zh) 2016-08-08 2022-12-13 菲尼萨公司 经蚀刻的平坦化的竖直腔表面发射激光器

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US5170407A (en) 1991-10-11 1992-12-08 At&T Bell Laboratories Elimination of heterojunction band discontinuities
US5745515A (en) * 1996-07-18 1998-04-28 Honeywell Inc. Self-limiting intrinsically eye-safe laser utilizing an increasing absorption layer
US5764671A (en) * 1996-10-21 1998-06-09 Motorola, Inc. VCSEL with selective oxide transition regions
US5848086A (en) * 1996-12-09 1998-12-08 Motorola, Inc. Electrically confined VCSEL
JP3713956B2 (ja) * 1998-05-29 2005-11-09 富士ゼロックス株式会社 面発光型半導体レーザ素子の製造方法
US6301281B1 (en) 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
US6744805B2 (en) * 2000-04-05 2004-06-01 Nortel Networks Limited Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers
US6611543B2 (en) * 2000-12-23 2003-08-26 Applied Optoelectronics, Inc. Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same
US6693933B2 (en) * 2001-03-15 2004-02-17 Honeywell International Inc. Vertical cavity master oscillator power amplifier
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101132118B (zh) * 2006-08-25 2010-06-02 佳能株式会社 包含多层反射器的光学设备和垂直腔面发射激光器
CN110021875A (zh) * 2018-01-09 2019-07-16 Lg 伊诺特有限公司 表面发射激光器器件和包括其的发光器件
US11183813B2 (en) 2018-01-09 2021-11-23 Suzhou Lekin Semiconductor Co., Ltd. Surface-emitting laser device and light emitting device including the same
CN110021875B (zh) * 2018-01-09 2022-05-13 苏州乐琻半导体有限公司 表面发射激光器器件和包括其的发光器件
CN114899706A (zh) * 2018-01-09 2022-08-12 苏州乐琻半导体有限公司 表面发射激光器器件和包括其的发光器件
CN114976862A (zh) * 2018-01-09 2022-08-30 苏州乐琻半导体有限公司 表面发射激光器器件和包括其的发光器件
CN114976862B (zh) * 2018-01-09 2025-09-23 苏州立琻半导体有限公司 表面发射激光器器件和包括其的发光器件
CN111630735A (zh) * 2018-01-18 2020-09-04 Iqe公司 用于激光器应用的多孔分布式布拉格反射器
CN112470352A (zh) * 2018-03-15 2021-03-09 通快光电器件有限公司 具有集成的隧道结的垂直腔面发射激光器装置
US12027819B2 (en) 2018-03-15 2024-07-02 Trumpf Photonic Components Gmbh Vertical cavity surface emitting laser device with integrated tunnel junction
CN116207612A (zh) * 2023-03-30 2023-06-02 扬州乾照光电有限公司 一种vcsel外延结构及其制作方法、vcsel芯片

Also Published As

Publication number Publication date
DE60238275D1 (de) 2010-12-23
JP4177262B2 (ja) 2008-11-05
WO2003058774A3 (en) 2004-03-25
WO2003058774A2 (en) 2003-07-17
US6850548B2 (en) 2005-02-01
EP1459417A2 (en) 2004-09-22
KR20040093676A (ko) 2004-11-06
EP1459417B1 (en) 2010-11-10
KR100558320B1 (ko) 2006-03-10
TWI237935B (en) 2005-08-11
US20030123513A1 (en) 2003-07-03
TW200301605A (en) 2003-07-01
ATE488039T1 (de) 2010-11-15
JP2005514796A (ja) 2005-05-19

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