TWI235285B - Photoresist compositions comprising polycyclic polymers with acid labile pendant groups - Google Patents

Photoresist compositions comprising polycyclic polymers with acid labile pendant groups Download PDF

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Publication number
TWI235285B
TWI235285B TW087115292A TW87115292A TWI235285B TW I235285 B TWI235285 B TW I235285B TW 087115292 A TW087115292 A TW 087115292A TW 87115292 A TW87115292 A TW 87115292A TW I235285 B TWI235285 B TW I235285B
Authority
TW
Taiwan
Prior art keywords
group
polymer
alkyl
acid
linear
Prior art date
Application number
TW087115292A
Other languages
English (en)
Chinese (zh)
Inventor
Brian L Goodall
Saikumar Jayaraman
Robert A Shick
Larry F Rhodes
Robert David Allen
Original Assignee
Sumitomo Bakelite Co
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co, Ibm filed Critical Sumitomo Bakelite Co
Application granted granted Critical
Publication of TWI235285B publication Critical patent/TWI235285B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
TW087115292A 1997-09-12 1998-10-23 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups TWI235285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92890097A 1997-09-12 1997-09-12

Publications (1)

Publication Number Publication Date
TWI235285B true TWI235285B (en) 2005-07-01

Family

ID=25456971

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087115292A TWI235285B (en) 1997-09-12 1998-10-23 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups

Country Status (11)

Country Link
EP (1) EP1021750A1 (ru)
JP (1) JP4416941B2 (ru)
KR (1) KR100572899B1 (ru)
CN (1) CN1251021C (ru)
AU (1) AU747516C (ru)
HK (1) HK1030992A1 (ru)
ID (1) ID25549A (ru)
MY (1) MY123980A (ru)
RU (1) RU2199773C2 (ru)
TW (1) TWI235285B (ru)
WO (1) WO1999014635A1 (ru)

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CN1223615C (zh) * 1998-02-23 2005-10-19 住友电木株式会社 耐刻蚀性改进的多环类光刻组合物
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
US6531627B2 (en) * 2000-04-27 2003-03-11 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
TWI284782B (en) * 2000-04-28 2007-08-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3997381B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
JP3997382B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
JP4544389B2 (ja) * 2000-04-28 2010-09-15 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4626736B2 (ja) * 2000-10-04 2011-02-09 Ｊｓｒ株式会社 環状オレフィン系共重合体を含む光学透明材料および液晶表示基板材料
US6624335B2 (en) * 2001-01-17 2003-09-23 Shin Etsu Chemical Co., Ltd. Ether, polymer, resist composition and patterning process
CN100386357C (zh) * 2002-04-08 2008-05-07 日本瑞翁株式会社 基于降冰片烯的开环聚合物,降冰片烯开环聚合物的加氢产物及它们的制备方法
WO2004007564A1 (en) 2002-07-10 2004-01-22 Lg Chem, Ltd. Method for preparing norbornene based addition polymer containing ester or acetyl functional group
KR100526403B1 (ko) 2002-07-10 2005-11-08 주식회사 엘지화학 에스테르기 또는 아세틸기를 포함하는 노보넨계부가중합체의 제조방법
US7989571B2 (en) 2002-07-10 2011-08-02 Lg Chem, Ltd. Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
WO2004007587A1 (en) * 2002-07-10 2004-01-22 Lg Chem, Ltd. Nobonene-ester based addition polymer and method for preparing the same
JP2007525543A (ja) * 2003-02-20 2007-09-06 プロメラス， エルエルシー フォトレジスト組成物のための溶解速度調整剤
KR20060120116A (ko) * 2003-11-18 2006-11-24 제이에스알 가부시끼가이샤 신규한 (공)중합체 및 그의 제조 방법, 및 카르복실기 함유(공)중합체의 제조 방법
JP2006100563A (ja) * 2004-09-29 2006-04-13 Sumitomo Bakelite Co Ltd 半導体装置
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
KR100989567B1 (ko) 2007-05-15 2010-10-25 후지필름 가부시키가이샤 패턴형성방법
EP2157477B1 (en) 2007-06-12 2014-08-06 FUJIFILM Corporation Use of a resist composition for negative working-type development, and method for pattern formation using the resist composition
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP5332883B2 (ja) * 2009-04-30 2013-11-06 住友ベークライト株式会社 感光性組成物、光導波路、光配線、光電気混載基板、電子機器、および光導波路の形成方法
JP6459192B2 (ja) * 2014-03-20 2019-01-30 住友ベークライト株式会社 感光性樹脂組成物
KR102324819B1 (ko) 2014-12-12 2021-11-11 삼성전자주식회사 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
KR101746789B1 (ko) 2014-12-18 2017-06-13 주식회사 엘지화학 고리형 올레핀 화합물의 (공)중합체를 포함하는 수직 배향막
GB201522304D0 (en) 2015-12-17 2016-02-03 Mars Inc Food product for reducing muscle breakdown

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US4106943A (en) * 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
WO1997033198A1 (en) * 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
KR100261022B1 (ko) * 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물

Also Published As

Publication number Publication date
HK1030992A1 (en) 2001-05-25
AU747516C (en) 2003-07-24
KR20010023940A (ko) 2001-03-26
CN1251021C (zh) 2006-04-12
RU2199773C2 (ru) 2003-02-27
MY123980A (en) 2006-06-30
AU747516B2 (en) 2002-05-16
EP1021750A1 (en) 2000-07-26
ID25549A (id) 2000-10-12
KR100572899B1 (ko) 2006-04-24
AU9219998A (en) 1999-04-05
JP4416941B2 (ja) 2010-02-17
CN1276884A (zh) 2000-12-13
JP2001516804A (ja) 2001-10-02
WO1999014635A1 (en) 1999-03-25

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MM4A Annulment or lapse of patent due to non-payment of fees