TWI234792B - Capacitor composite circuit element and IC card multilayer capacitor - Google Patents
Capacitor composite circuit element and IC card multilayer capacitor Download PDFInfo
- Publication number
- TWI234792B TWI234792B TW92131513A TW92131513A TWI234792B TW I234792 B TWI234792 B TW I234792B TW 92131513 A TW92131513 A TW 92131513A TW 92131513 A TW92131513 A TW 92131513A TW I234792 B TWI234792 B TW I234792B
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- film
- thin film
- dielectric
- circuit
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 79
- 239000002131 composite material Substances 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 54
- 150000001875 compounds Chemical class 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 23
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 5
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 5
- 229910052745 lead Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 66
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- -1 Ca Ti Inorganic materials 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 210000000078 claw Anatomy 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 17
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 18
- 239000013078 crystal Substances 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 7
- 239000012792 core layer Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 241000208422 Rhododendron Species 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000003248 secreting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002328574A JP2004165372A (ja) | 2002-11-12 | 2002-11-12 | コンデンサ複合回路素子およびｉｃカード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200410271A TW200410271A (en) | 2004-06-16 |
| TWI234792B true TWI234792B (en) | 2005-06-21 |
Family
ID=32310548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92131513A TWI234792B (en) | 2002-11-12 | 2003-11-11 | Capacitor composite circuit element and IC card multilayer capacitor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2004165372A (fr) |
| TW (1) | TWI234792B (fr) |
| WO (1) | WO2004044935A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208173340U (zh) | 2015-10-30 | 2018-11-30 | 株式会社村田制作所 | Lc复合器件以及处理器 |
| CN113496821A (zh) * | 2020-04-03 | 2021-10-12 | 余学恩 | 一种芯片制程技术的微电池 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106198A (ja) * | 1993-10-08 | 1995-04-21 | Matsushita Electric Ind Co Ltd | 積層薄膜コンデンサの製造方法 |
| JP3349612B2 (ja) * | 1994-01-13 | 2002-11-25 | ローム株式会社 | 誘電体キャパシタおよびその製造方法 |
| JPH08253324A (ja) * | 1995-03-10 | 1996-10-01 | Sumitomo Metal Mining Co Ltd | 強誘電体薄膜構成体 |
| JP2692646B2 (ja) * | 1995-05-11 | 1997-12-17 | 日本電気株式会社 | ビスマス系層状強誘電体を用いたキャパシタとその製造方法 |
| JPH09213894A (ja) * | 1996-02-06 | 1997-08-15 | Nippon Telegr & Teleph Corp <Ntt> | 平滑回路素子 |
| JPH10294432A (ja) * | 1997-04-21 | 1998-11-04 | Sony Corp | 強誘電体キャパシタ、強誘電体不揮発性記憶装置および強誘電体装置 |
| JP2000169297A (ja) * | 1998-09-29 | 2000-06-20 | Sharp Corp | 酸化物強誘電体薄膜の製造方法、酸化物強誘電体薄膜及び酸化物強誘電体薄膜素子 |
-
2002
- 2002-11-12 JP JP2002328574A patent/JP2004165372A/ja not_active Withdrawn
-
2003
- 2003-11-11 TW TW92131513A patent/TWI234792B/zh not_active IP Right Cessation
- 2003-11-11 WO PCT/JP2003/014306 patent/WO2004044935A1/fr active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| TW200410271A (en) | 2004-06-16 |
| WO2004044935A1 (fr) | 2004-05-27 |
| JP2004165372A (ja) | 2004-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |