TWI234792B - Capacitor composite circuit element and IC card multilayer capacitor - Google Patents

Abstract

The capacitor composite circuit element of the present invention combines an inductor (30) and a capacitor (2). The capacitor (8) has a dielectric thin film (8). The dielectric thin film (8) is composed of a layer compound of bismuth having c-axis oriented substantially perpendicularly to the surface of a substrate for forming the thin film. The layer compound of bismuth has a composition formula represented by (Bi2O2)<2+>(Am-1BmO3m+1)<2-> or Bi2Am-1BmO3m+3, where the symbol m is a positive number, the symbol A is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and the symbol B is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W.

Description

1234792 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a composite circuit element such as a built-in IC, a capacitor, and a capacitor circuit except for a capacitor ΓΙΙΓΓ circuit element. Circuit elements are compounded Capacitors [Previous technology] Electronic devices such as power supplies or mobile phones have built-in voltage conversion from commercial supply II: U electricity f 'to electronic devices and carry out the circuit: 敕: thunderstorm source usually. Usually This switching power supply circuit includes a switching circuit, a rectifier circuit, and a smoothing circuit. Individual skeletal circuits are composed of inductors and capacitors. Around the winding wire ^ ϊ, the magnet layer and the core layer are intersected and a plurality of layers are laminated to form the core layer in the layer inductor element. In addition, the capacitor element is known as: a layer in which a dielectric layer and an internal electrode layer are cross-laminated Ceramic capacitors. In addition, with the increase in the size of LSIs and other electronic devices, the size of electronic devices has become smaller. In these electronic devices, switching power circuits is indispensable. Therefore, switching is expected. Miniaturization and thinning of the power supply circuit. Because the switching circuit and rectifier circuit used in the switching power supply circuit are composed of 7L semiconductors, it can be easily miniaturized and thinned. In the conventional technology, it is difficult to miniaturize and reduce the thickness because several electric parts and capacitor elements are formed separately. Therefore, there are proposals for a smooth circuit element in which an inductor element capacitor element is integrally formed by a thin film forming method ( Refer to Patent Document i: Japanese Patent Laid-Open No. 9-2 1 3894).

2030-5987-P (Nl) .ptd 1234792 V. Description of the invention (2) However, the dielectric layer of the thin-film transistor described in Patent Document 1 and the like, because of the use of PZT, PLZT, BST, Ta2 05 and other dielectrics Because of the electric thin film, the temperature characteristics will be difficult, and the capacitance will change considerably with the change of the use temperature environment. For example, the electrostatic capacitance of BST at 1 20 ° C shows a temperature change of -1000 to -4000 ppm / ° C compared to the electrostatic capacitance at 20 ° C, and the temperature characteristics are poor. Smooth circuit components are also used in various temperature environments, and they also need to have excellent temperature characteristics. Furthermore, if these conventional dielectric films are thinner (for example, less than 100 nm), the dielectric constant tends to decrease. In addition, these conventional dielectric films also have difficulties in surface smoothness. If the thickness of the dielectric film becomes thinner, problems such as poor insulation will also easily occur. In other words, conventional thin film capacitors have a problem in that if they become thin, the surface smoothness will be deteriorated. Therefore, it is difficult to laminate most other layers, and it is difficult to laminate a container and other circuit elements on a substrate. In addition, if the conventional dielectric film has a thickness of the dielectric film, for example, when an electric field of 100 kV / cm is applied, there will be a problem that the capacity will be greatly reduced. Electricity

Furthermore, as in non-patent literature 丨 "Alignment of bismuth layered ferroelectric particles and its application to piezoelectric and pyroelectric materials" Takenaka Masaru f 1 University Doctoral Dissertation (1 984) Chapter 3 Chapter As shown on pages 23 ~ 77 = ,: In the formula, or in the formula Bi2A B0, the symbol m is a positive number of 8 and the symbol a is: the heart is b.

At least i kinds of elements are selected in Ca and = ’The symbol B is a composition a where at least i kinds of elements are selected from Fe, co, c ::: ^ 'mv' MoM

1234792 V. Description of the invention (3) The material 'method constitutes the obtained bismuth layered compound dielectric. If the species ΐ (\ 献 ^ 目 关 当 / compositional relationship shown in the above composition formula) and the thin surface of the compound = the C 壤 soil of the compound, is it still π secret, (Lu Ru less than 1 am), even if / Xun Xun is a film that gives higher dielectric rate and low loss. It is a thin film with superior ancient characteristics, improved withstand voltage, and also has excellent leakage current. It has excellent characteristics, Surface smoothness [Content of the invention] The present invention is not uncommon. * For example, it can be configured at 1 (: the internal process of the card is intended to provide-a kind of change is still small, and the bias depends on; m: f 'Even at high temperatures; for example, capacitors such as inductive elements 5 | outer valleys and low dielectric loss', such as a capacitor complex I; ::: circuit elements, and capacitors are duplicated. The crystalline structure of the compound is studied in depth, and the compound is made of a compound material, and the person :: fat / see uses a specific composition of the secretory layer suitable for use as a capacitor composite electric:; ::::; : By this! The inventor of the present invention found that by comparing the substrate Φ, &quot; Gu Wei. In other words, live 5 brothers, compared High dielectric constant and low loss (tan = thin 'is still a dielectric film with superior surface smoothness. Sheep's blood degree is particularly important for the capacitor composite lightning failure of the present invention &amp;# ^ ^ ^ Circuit outside the capacitor The components are compound, valley, and capacitor composite circuit components in addition to the above-mentioned capacitors; 2030-5987-P (Nl) .ptd 1234792 V. Description of the invention (4) It is characterized in that the above-mentioned capacitors have the right eighth The above dielectric thin film is a dielectric thin film; the bismuth layered on the substrate surface is used to form the layered di-composite with the C-axis alignment being truly perpendicular to the thin film; The above, =, and the formula: (Βΐ2〇2) 2+ (νΛ〇_) 2-, is a symbol from the Na, K, Pb, Ba, s% grades 111 is a positive number, the symbol A number B Select at least one element from Fe, co, Ca, /, and Ca, and at least one element from the symbol. Δ, Ti, Nb, Ta, Sb, V, Mo, and W of the capacitor composite type of the present invention With a thin electronic device = 70 pieces of circuit 'can be built in all the requirements of the above circuit components ^ circuit use.', Inductance 'the above circuit components are smooth In the 1C card of the present invention, in the present invention, the above-mentioned capacitor composite circuit element is eliminated. The thin film formation method is adopted. One or two of the circuit elements and the capacitor are preferably the above-mentioned dielectric substance = on the substrate. It is preferable that the capacitor system is placed between the electrode films. The upper and lower electrodes, the above-mentioned dielectric film formed on the above-mentioned dielectric film formed on the above-mentioned film-forming base, and the electrode and the dielectric film are formed. Film capacitors for electrodes. On the surface of the substrate for forming the lower film. ~ The electrode is formed on the substrate by a thin film formation method. There is no particular limitation. Amorphous materials, or early, crystalline materials, can also be used. The sub-version is made of synthetic resin. All on the substrate 2030-5987-F (Nl) .ptd $ 7 pages 1234792 V. Description of the invention (5) = Electricity: It is best to be formed in the [100] orientation. 11 By forming the lower electrode in the UOOj orientation, the c-axis of the interlayer compound formed thereon can be aligned vertically to the substrate surface. It is preferable that the composite circuit element of the present invention is θθ sliced after use. However, the composite circuit element of the present invention may be mounted on other electronic equipment such as a socket, or a socket. In the present invention, the c-axis 100% of the bismuth layered compound is specifically aligned to the substrate surface (that is, the C-axis alignment of the bismuth layered compound is straighter than the C-axis alignment degree is 100%. Preferably, the above is 0 ′ =, also The degree of orientation is 80% or more. The c-axis arrangement of the compound a should preferably constitute the composition of the above-mentioned bismuth layered compound, especially any number of Bu 5. Because of its relatively high capacity, it is better to use the above-mentioned secret layer. Compounds containing rare earths X Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb

Select at least one element among Yb and Lu). y, 〇, r, Tm, system 4ΐ =! The method xe of the dielectric film used in the composite circuit element of the container is not particularly limited. For example, the crystals of monolayers and monoclinic crystals are aligned to the [100] square. Crystal, wide square crystal, orthorhombic (Βι2〇2)-(νιΒΛΒ + ι) 2-. ^ Bi ιΒ, ^ 5 (The symbol m is a positive number 'The symbol A is self-explanatory. In the above composition formula ... choose i elements , Symbol B is from two two

Nb, Ta, Sb, V, Mom to the top 0. A layered compound 2030-5987-P (Nl). Ptd 1234792 with Ga and one element selected 5. Description of the invention (6) The electro-membrane can be manufactured. The silk-layered compound with the above composition $ ^ θ ^ ^ ^ ^ The dielectric substance formed by the θ-shaped mouthpiece with C-axis alignment: =, two changes, still belongs to a higher dielectric constant (such as permittivity over ^ Yi Φ Dudu n tan 6 is less than G. 02), excellent leakage current characteristics (for example: the leakage current measured according to the electric field strength 50kV / cm is i χ i η-or less, = rate is less than 10% ) 、 Improve the withstand voltage (such as 10000kv / cm degree characteristics, (such as the average rate of change of dielectric constant vs. temperature, at a reference temperature of 25 C is ± ZO Ορρπι / γ⑺. For example, the surface roughness Ra is 2nm In the following); inner), the surface smoothness is also superior. Furthermore, the capacitor composite circuit element y of the present invention can maintain a high dielectric constant even if it is thin, and the surface is smooth = so even a single layer can still be large thunder The effect of optimizing and can be multilayered to achieve a larger capacitance, and furthermore, the capacitor of the present invention has superior electrical characteristics (such as specific, and 痄 π from ^ noon electric coupling-system frequency 1 3 female special / plate degree) The ratio of the dielectric value of 1 Hz in the lower frequency region to the dielectric value in the low frequency region is an absolute value of 0.9] and is superior in characteristics (such as At a specific frequency, the ratio of the dielectric constant value to the measured voltage at 5V is two = Dan Yan Lei 6. The capacitor of the compound circuit element of the electric valley device has excellent temperature characteristics per φ electric valley. The percentage of fu% # ^ f is within 25 ° C. of the specific electricity rate, within ± 20 0 Ppm / t). In the present invention, the so-called “thin film” refers to the use of various films / jin to form a thickness of 0.2 nm to Counting "material boat ^", the material film of the double family, the main purpose is to use

1234792 V. Description of the invention (7) The sintering method forms a thickness of several hundred meters or more. In the film +, in addition to continuous coverage of both film-thick blocks (㈤ intermittently covered at any interval) and continuous film, it also contains part of the surface, or it can be all, and the point / film can be Formed on the substrate [Embodiment] 乂, the following, according to the actual implementation shown in the figure 丨 _ / 扪 embodiment ... 1 detailed description of the present invention. As shown in Figure 1 and Figure 2, this miscellaneous-with ... Yuan侔？ η Sun Qiie then connected a, Tuner two steam &amp; shape sad capacitor composite circuit μΓ: 并联 and capacitor 2 coupled in parallel with the electric body is formed in the ϋ system is laminated using a thin film formation method: the second The capacitor 2 in the compound circuit element 20 of the valley device has a soil plate 4 on which a lower electrode film 6 is formed. A dielectric film 8 is formed on the lower electrode film 6. On the dielectric material, An upper electrode film 10 is formed on the thin film 8. In order to be laminated on the capacitor 2 and form an inductor 30, the end portion of the dielectric thin film 8 and the surface of the upper electrode thin film are formed by the first interlayer insulating layer 12 It is compounded and a magnetic layer 14 is laminated thereon. Inside the magnetic layer 14 are arranged together to form an inductor 3 〇 The core layer 18 and the second interlayer insulation layer 16 are used. The first interlayer insulation layer 12 and the second interlayer insulation layer 16 are made of, for example, oxidized stone azalea or silicon nitride, and the magnetic layer 1 The 4 series is composed of a magnet material, etc., and the core layer 18 is composed of the same conductive layer as the dielectric film 8 or the upper electrode film 10, and a predetermined core pattern is formed by a lithography method or the like. The insulating layers i 2 and 16 6, magnetic layer 1 4 and core layer 1 8 are used for forming capacitor 2

2030-5987-P (Nl) .ptd Page 10 1234792 V. Description of the invention (8) Thin film forming, such as CVD or sputtering, with the same fqi forming method. It is processed into a predetermined pattern by lithography. The f layer 18 is formed to form the core pattern of the inductor 30 as shown in the figure. At A, j is the upper electrode film 10 of the valley device 2 and the lower electrode film n 8. The connection is in a state of being coupled in parallel to the capacitor 2. In this embodiment, two upper and two terminals are coupled to the upper electrode film 10 and the lower electrode film 6 through contact holes or external terminals (not shown). The best ΪΪ42 is composed of lattice matching (laUiCe, Γ, 'Γ) (such as: SrT10 single crystal, Mg0 single crystal, uai〇3 single junction =, amorphous materials (such as: glass, fused silica, Si〇 / Si, etc.), 50% resin (such as: polyimide resin), or other materials (Se 2 yzr ^ si, Ce〇2 / Si, etc.), etc. In particular, it is best to use cubic: plate The so-called ft square crystal, monoclinic crystal, etc. are aligned to the angle of [1 00] orientation, etc .. The thickness of the substrate 4 is not particularly limited, such as 1 () ~ 1 000 _ used on the implanted film substrate 4 In the case of single crystals with good lattice matching, the lower electrode or Pt 'or R is expected to be ^ 2 ° .: CaRU〇3, or conductive oxides such as SrRU〇3. It is better to be composed of Λ gene aligned in the [10 0] orientation. If the substrate 4 is aligned to = the orientation can be formed on the surface of the [⑽] orientation-square, and the lower electrode film 6 is aligned to the electrode film. The composition of 6 = 2 compounds or precious metals can improve the alignment of the === electric film 8 to the [〇 ° 1] orientation, that is, the C-axis alignment. This kind of lower Negishi is removed here Bu Kuan The thin film 6 can use a common thin film shape 2030-5987-P (Nl) .ptd page 111234792 V. Description of the invention (9) ϊίίί is preferably made of materials such as low-level plating or pulsed laser vaporization (3), etc. 3 〇〇 The temperature of the substrate 4 on which the lower electrode film 6 is formed is set at 300 ° C or higher (especially 500 ° C or higher is preferred). The lower electrode film 6 is formed by using an amorphous material for the wall fTU i. It can also be made of 2-4 conductive glass. When the substrate 4 adopts the lattice matching ϋearly and crystalline, it is easy to form a lower electrode film 6 ′ on the surface aligned with 100 :: This makes it easy to improve the c-axis alignment of the lower electrode film 7 '&quot; the electric film 8. However, even if the substrate 4 is made of an amorphous material such as glass, it is still possible to use the material on the soil. A dielectric film / film 8 with improved C-axis alignment is formed. In this case, the film formation conditions of the dielectric thin film 8 must be optimized. Pd), silver (Ag), and other hafnium metals f and other alloys, base metals such as nickel (Ni), copper (Cu), or these alloys can be used. Lower electrode film 6 thick The degree is not particularly limited, but is preferably 10 to 1000 nm, and more preferably about 50 to 100 nm. The upper electrode film 10 can be made of the same material as the lower electrode film 6 described above. 'The thickness only needs to be set to the same.

&quot; Electromagnetic film 8 is an example of a composition for a thin film capacitor element of the present invention, and contains a composition formula: (Bi2202) 2+ (AmiB 9 1) 2, or BiA_AU bismuth layer 7 compound. Generally, a bismuth layered compound is a layered perovskite layer formed by connecting a layer of perovskite with (m-1) Αβ03, and a pair of B i and 0 layers. In this embodiment, the alignment of such a bismuth layered compound to the [OO 1] orientation is improved, that is, the c-axis alignment is improved. In other words

Page 12 2030-5987-P (Nl) .ptd 1234792 V. Description of the Invention (1) If the c-axis configuration of the bismuth layered compound is perpendicular to the substrate 4, a dielectric thin film 8 is formed.

In the present invention, although the c-axis alignment degree of the silk layered compound is particularly preferably 100%, the c-axis alignment degree may not necessarily be 100%, as long as the c-axis alignment degree of the bismuth layered compound is the highest. Fortunately, it is more than 80% (especially 90% or more, more preferably 95% or more). For example, when the substrate 4 composed of an amorphous material such as glass is used to perform c-axis alignment of the bismuth layered compound, the c-axis alignment degree of the silk layered compound is preferably 80% or more. In addition, when the silk laminar compound is axially aligned using various film formation methods described later, the c-axis alignment degree of the layered compound is preferably 90% or more (especially 95% or more is preferred). That's it. Here, the "c-axis alignment degree (ρ) of the silver layered compound will set the X-ray diffraction intensity of the polycrystalline body forming the random orientation of the crystal to the j-axis, and set the actual X-ray diffraction intensity of the c-axis to In the case of p, it is convenient to use F (%) = (PP〇) / (lP〇) X 1〇〇 ... (Equation 1). The "P" in Equation 1 refers to the (0 0 1) plane The reflection intensity I (〇〇1) totals 2 I (〇〇1)

The ratio ({Σ 1 (001) / Σ I (hkl)}) to the total reflection SI (hkl) from the reflection intensity l (hkl) from each crystal plane (hkl) is the same for P0. Here, in Formula j, the X-ray diffraction intensity p when 100% is aligned on the C axis is set to J &lt; In addition, when Formula 1 is used to form a completely random alignment (p = p〇) , F =, and when it is completely aligned in the c-axis direction (p = i) = Furthermore, the so-called "c-axis of bismuth layered compounds" refers to a pair of (β i 〇 layer connection directions, ie [ 0 0 1] Orientation. According to the c-axis alignment of the bismuth layered cymbals 2 and 2 characters, the dielectric characteristics of the dielectric thin film 8 are exerted.

1234792 V. Description of the invention (11): In other words, even if the thickness of the dielectric thin film 8 is reduced to less than 100 nm, J can still give a relatively high dielectric constant and low loss (ta η accounts for a relatively low) , Leakage ~ Superior characteristics, improved withstand voltage, superior dielectric temperature characteristics, and superior surface smoothness. If tan 3 is reduced, the loss Q (i / tan value will increase. In the above formula, the symbol m is only required if it is a positive number, and there is no special restriction. 鼾 And again: if the symbol "even number 'because it has parallel The mirror surface on the c-plane will therefore use this mirror surface as the boundary line. The spontaneous polar components will cancel each other out, forming a non-polarized axis in the axial direction. Maintaining paraelectricity and achieving the dielectric constant temperature And low loss (tan (low 5). Call for zoom, in the above formula, the symbol A is composed of Na, K, Pb, Ba, Sr elements. In addition, when the symbol ... The ratio of equals can be any ratio. In the above formula, the symbol B is selected from Fe, Co, Cr, Ga, Ti, Nb,, Sb, V, Mo, and W at least i element symbol B is 2 More than ♦ 椹 士 — 比 士 In addition, when the ratio. In the case of prime composition 'the ratio can be arbitrary

The formula I.m'n is particularly preferably a bismuth layered compound which is chemical. In the case of this composition, special / mention two = raw X series Uw. In the dielectric thin film 8, the above is composed of

1234792 V. Description of the invention (12)

At least one element selected from Dy, Ho, Er, Tm, Yb, and Lu. (Containing rare earth elements of Y). The amount of substitution using rare earth elements varies with the value of 111. For example, when m = 3, in the composition formula Bi2A2_xRexB3012, it is best to be 0.4 $ x $ 1 · 8 'especially 1 · 0 $ χ $ 1 · 4 is better. By replacing the rare-earth elements in this range, the Curie temperature of the dielectric thin film 8 (the phase transition temperature from the conversion of the ferroelectric to the paraelectric) can be achieved. It is best to be bundled at-; [00〇 it and not more than 100 (especially -50 or more and 50 C or less is preferred). If Curie Point is -100 ° c ~ + 100

The dielectric rate of the lambda film 8 is 1 μ &lt; L ·, oil, ® 7 Price: θ At &lt; I Electricity drought will rise. Even if you use DSC (Differential Scanning Thermal Detector) to wait for you, you can do any of the following: r 〇, 〇Γ. ^ _ This is the first test. In addition, if the courtesy point is lower than room temperature, &quot; the tan / will be reduced, and the loss Q value will increase as a result. In the case where n is an even number of rn = 4, n is preferably 0.01 in a composition of 0 ′ and 2′15. $ 2.0, especially ο.1 sx ^ 1. The thin film 8 at f may not have the rare-earth element Re, but it will be better to be i as described below. Machine characteristics, but by replacing with Re will make the leakage current characteristics degree 5. Di-di-di-dielectric thin film of element Re 8 8 'Using electric field strength, especially leakage current of 5x riding, preferably below 1x 10-7A / cm2, especially below 5%, and The short-circuit rate is also preferably 10%. In contrast, the chain: according to the same bar, # ^ s such as the dielectric thin film 8 with the rare earth element Re, the leakage current when measured especially by Ivt is preferably 5x 10-8 仏 # is preferably less than / cm, and the short circuit rate is also preferably less than 5%.

V. Description of the invention Under (13), the dielectric film 8 which is preferably less than 3% can be used, such as: vacuum vapor deposition method, laser vapor deposition method (PLD), MOCVD (Metal 〇rganic Chewed method, liquid phase) (CSD method) and other thin film formation methods. S; 丨 Electro-shell thin film 8 when it is necessary to form a film at low temperature 'Electropolymer CVD, photoluminescence, laser CVD, optical CSD, laser CSD Λ In the native yoke form, a dielectric thin film 8 is formed using a film-forming substrate or the like that is aligned to a specific orientation ([100] orientation, etc.). From the viewpoint of reducing the number of manufacturers, it is best A substrate 4 made of an amorphous material is used. If a dielectric thin film 8 formed in this manner is used, a bismuth θ-shaped compound having a specific composition is aligned in the c-axis direction. The thin film capacitor 2 will reduce the dielectric film thickness to as low as 20nm, which can be lower than the dielectric constant and low loss. 'Excellent leakage current characteristics_, withstand voltage, The temperature and temperature characteristics are excellent, and the surface smoothness is also excellent. Because the dielectric thin film 8 can be thinned, it can be simultaneously It is possible to realize two-type capacitors. In addition, in this embodiment, because the surface of the capacitor 8 is excellent in smoothness, it is easier to use: a thin-film formation method in which an inductor 3 is laminated on the capacitor 2 and more. / 20: The thickness of the capacitor composite circuit element including capacitor 2 and inductor 30, and the ^ Zi Ling body, can be thinned to the level of 0.05 to 0. 5_ capacitor capacitor composite The circuit element 20 can also be easily buried inside a thin electronic device such as a ground-level 1C card. Furthermore, the dielectric thin film 8 is superior in temperature characteristics, so that

1234792 V. Description of the invention (14) The operating temperature environment has changed, because the electrostatic capacitance of the capacitor has not changed, so the function of the component is maintained. μ F1 The present invention is not limited to the above-mentioned embodiments, and various changes can be made in the motorcycle enclosure of the present invention. 'If the electric valley device 2 can also be combined with circuit elements other than the inductor 30, the electric backup composite circuit components. The electric conductor element ΐ ΐ which can be combined with the capacitor 2 is not limited. In addition to passive components such as resistors, there are still half-sticks, moving parts, and so on. Uses other than smooth circuit elements; (5.2.1 Circuit elements for containers and inductors, such as monolithic microwave integrated electric composite elements 0 pieces :: MlCr〇Wa: e Integrated Circuit'MMIC) The specific use of body and hard, combined with active components (or passive components) and capacitor theft, can be exemplified such as "mixed circuit boards, etc.", the present invention +, the dielectric thin film 8 is also J electrical: film U . And there are multiple layers. The capacitor film of the present invention is because the surface is smooth. Second: The negative thin pressure is still superior, and it can be laminated more than conventional layers. According to more detailed embodiments, the present invention is not limited to these embodiments. It is expected that the following implementation of the present invention and the confirmation of the capacitance of the capacitor composite circuit element of the present invention are not examples. Only the present invention can be confirmed. Inventing a new capacitor based on the characteristics of the individual capacitors and other circuit components, such as laminated inductors, is fine. 2: Thin film formation used in conductor processes and the like is known and achieved. The imitation shirt method can be easily implemented. example 1

1234792 V. Description of the invention (15) The [1 00] orientation epitaxial growth will form a SrRu 03 single crystal substrate ((100) 31 ^ 11〇3 // (100) 31 ^ 103) heated to 700C. Secondly, on the surface of the electrode film under SrRu03, Ca (CnHi9〇2) 2 (C8H32N5) 2, Sr (C &quot; H19 02) 2 (C8H32N5) 2, Bi (CH3) 2 &amp; Ti (〇-i-C3H7) 4 as the raw material \ Using the MOCVD method, the film thickness is about 丨 ⑽⑽. ^^ ΒΙΤΊΟβ thin film (&quot; electrolytic film) 'changes χ = 〇, and is formed in plural. The X value is controlled by adjusting the carrier gas flow rates of the Ca raw material and the Sr raw material.

Furthermore, in the above chemical formula, when χ = 0, the SrBi4Ti4oi5 film (SBTi film / composition formula: Bi2Am a% ㈣, symbol ^ 4, symbol A3-Sr + ^ i2, and symbol β4 = Ti4). In addition, when χ = 1, the CaBi4Ti4〇i5 thin film (cbti thin film / composition formula: Bi2m3, symbol ㈣, symbol A3 = Ca + B i2, and symbol b4 = T i4). As a result of X-ray diffraction (XRD) measurement of the crystal structure of 忒 and other dielectric thin films, it can be confirmed that the orientation is in the [001] orientation, in other words, the C-axis orientation perpendicular to the surface of the SrTi03 single crystal substrate. The surface roughness (ja) of these dielectric films was measured using AFM (Atomic Force Microscope, manufactured by Seiko Instruments Inc., s P I 3800) in accordance with JIS_B0601.

Secondly, on the surface of the dielectric thin film ±, a Pt upper electrode thin film of 0.1 ππηφ was formed using a base ore method to prepare a thin film capacitor sample. The electrical characteristics (dielectric rate, tan 5, loss Q, leakage current, withstand voltage) of the obtained capacitor samples were evaluated, and the temperature characteristics of the dielectric rate were evaluated. ‘I electric rate (unitless) is a digital lcr meter (4274A, manufactured by YHR) for capacitor samples, and the frequency is measured at room temperature (25.0 ′).

1234792 V. Description of the invention (16) Under the condition of 100kHz (AC2 0mV), the measured capacitance, the electrode size of the capacitor sample, and the distance between the electrodes are measured. Tan 5 was measured under the same conditions as above for measuring capacitance, and the loss Q was calculated. The leakage current characteristic (unit A / cm2) is measured according to the electric field strength of 50 kV / cm. The temperature characteristic of the dielectric constant is measured for the capacitor sample according to the above conditions. 'When the reference temperature is set to 2 5 C, the dielectric constant is measured at a temperature in the temperature range of -55 ~ + 150 ° C. The average change rate (△ ε), and calculated the temperature coefficient (ppm / ° c). The withstand voltage (in kv / cm) is measured by increasing the voltage in the leakage current characteristic measurement. These results are shown in Table 1.

2030-5987-P (Nl) .ptd Page 19 234792 V. Description of the invention (17) Room η Various rooms | _χ ο 1 '1 〇 • ~ * · ο BW bf 铕 砗 （V Θ1 · — »a ~ i 1—1 Γπι will bt Ν ′ 5h · —L 〇1 »» L o ^ τΛ. Ii 讫 to II »V 1 ~~ L 〇〇V .—ι- 〇 o lg t follows ^ 〇 0—-1 -Ιο X ^ eight O -1 -lo x ^ m Q 鵃 oo ο go / 0

UUUI 2030-5987-P (Nl) .ptd Page 20 1234792 5. Description of the invention (18) As shown in Table 1, the 0-axis alignment film of the bismuth layered compound obtained in Example 1 was confirmed to have a pressure resistance as high as 1 Above 0 0 0 kV / cm, the leakage current is as low as 1 X 1 〇_7, the dielectric constant is above 200, tan 6 is below 〇 2, and the loss q value is also above 50. This can be expected to further reduce the thickness of the film, and further increase the capacitance of the thin film capacitor. Furthermore, in Example 1, it was also confirmed that although the temperature coefficient is a very small value of less than 150 ppm / ° C, the dielectric constant is larger than 2000, and it is used as a capacitor material for temperature compensation. Superior basic characteristics. In addition, in Example 1, it was confirmed that the surface smoothness was excellent.

Thin film material suitable for manufacturing laminated structure. In other words, through Example 1, the effectiveness of the c-axis alignment film of the bismuth layered compound was confirmed. Example 2 In this example, the film capacitor samples prepared in Example 丨 were used to evaluate the frequency characteristics and voltage characteristics. 7 The frequency characteristics were evaluated as follows. For the capacitor sample, change the frequency from 1kHz to 1MHz at temperature (25 C), and measure the static

: Calculate the permittivity. The result is shown in Figure 4. The electrostatic capacitance was measured using Hi2 as shown in the figure, and it was confirmed that the frequency characteristics were superior even at a specific temperature. "、, understatement In other words, it was confirmed that the frequency and voltage characteristics were evaluated as follows. The measured voltage (applied electricity: 5kV / cm) at u frequency uookw was changed to 5V (electric field strength ⑽v / cm) and measured.

1234792 V. Description of the invention (19) The electrostatic capacitance under pressure (measured at 25 ° C), and the dielectric constant is calculated. The result is shown in Figure 5. The electrostatic capacitance is measured using an LCR meter. As shown in Fig. 5, it was confirmed that the dielectric constant value did not change even if the measured voltage at a specific frequency was changed to 5 V. In other words, it was confirmed that the voltage characteristics were superior. Although the embodiments and examples of the present invention have been described above, the present invention is not limited to these embodiments and examples. Of course, various aspects can be implemented without departing from the scope of the present invention. As described above, according to the present invention, it is possible to provide a small size which can be arranged inside an IC card, for example, even if the temperature is high, the characteristic change is still small, and the bias dependency is small, the capacitance is large, and the dielectric loss is low. For example, a circuit component other than a capacitor such as an inductive element, and a capacitor composite circuit element combined with a capacitor &lt; 1.

2030-5987-P (Nl) .ptd Page 22 234792_ Brief Description of Drawings Figure 1 is a circuit diagram of a capacitor composite circuit element according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of a capacitor composite circuit element according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of a sample of a capacitor composite circuit element according to an embodiment of the present invention for performing a capacitor unit test. FIG. 4 is a frequency characteristic diagram of a capacitor according to an embodiment of the present invention. FIG. 5 is a voltage characteristic diagram of a capacitor according to an embodiment of the present invention. (Description of symbols) 2 Capacitor 4 Substrate 6 Lower electrode film 8 Dielectric film 1 0 Upper electrode film 1 2 First interlayer insulating layer 14 Magnetic layer 16 Second interlayer insulating layer 18 Core layer 20 Capacitor composite circuit element 30 Inductor

2030-5987-P (Nl) .ptd Page 23

Claims (1)

The scope of the patent application is to duplicate the circuit elements outside the electric capacitor capacitor composite container. The capacitors and capacitors are characterized by: ”ΐϊ: = ί has a dielectric film; it is truly vertical with μ orientation from a certain system The bismuth layered compound on the surface of the substrate for thin film formation, and the claw layer of the bismuth layer is composed of J 2 '(called 〇2) 2+ (14〇, _ „+ 1) 2-, \ formula The symbol m in the formula is a positive number, as shown by the symbol / Bl2VlBm〇3in + 3. At least i kinds of elementary systems are selected from the above composition center from Na, K, Pb, Ba, Sr, Ca Ti, Nb, Ta, Sb, V , M0 and: No. 8 are from Fe, Co, Cr, Ga, and middle 2. If the scope of patent application is 7: to / select 1 element. Among the above-mentioned dielectric thin films H, container composite circuit elements, among which 3. If applied for d § between thin films. The above-mentioned ㈣-shaped coupler composite circuit element, its components 4. Such as the patent application Ξΐ T series 2 80% ~ worship the thunder cross of item 1, 2 or 3 5 it: apply for! The thin film is a layered structure road element. * If the capacitor of the June patent application No. 1, 2 or 3 is applied. . Which ‘the above circuit elements are inductive? Sliding circuit for composite circuit elements. The circuit components are regarded as flat 6.-1C card 'is embedded with the application circuit components.电容器 Capacitor complex of item 5