TWI234592B - Thin sheet manufacturing method, and thin sheet manufacturing apparatus - Google Patents

Abstract

A thin sheet manufacturing method with very high manufacturing efficiency and at a revolutionarily low manufacturing cost per unit area both achieved by expanding the production scale and a thin sheet manufacturing apparatus. A silicon thin sheet (1) is manufactured by the process including a dipping step in which the surface portion of a base sheet (2) is dipped in a silicon melt (10), and silicon is made to adhere to the surface of the base sheet. After the silicon thin sheet (1) formed on the surface (2a) of the base sheet (2) is separated from the base sheet, at least the peripheral portion (4) of the silicon thin sheet (1) is cut. Since a high-quality silicon thin sheet can be manufactured at a high efficiency, the manufacturing cost can be lowered.

Description

1234592 发明 Description of the invention: [Technical jaw field to which the invention belongs] The present invention relates to a thin plate manufacturing method and a thin plate manufacturing device, and more specifically, to a silicon thin plate manufacturing method and a silicon thin plate manufacturing device. [Prior art]

Silicon can be used in consumer solar cells. Although the conversion efficiency of silicon is reduced according to the order of single crystal silicon, polycrystalline silicon, and amorphous silicon, on the other hand, the cost is also reduced and increased in area according to the above order. Among them, amorphous silicon can be deposited on glass by using CVD (Cherrn ca 1 V a ρ 〇t'D e ρ 〇s 11 丨 ο η: chemical vapor deposition) method because S Η 4 can be used as a raw material. , Plastic, metal substrates, etc., so the cost is low, and it is easy to large area, and its conversion efficiency is about 12 at the highest. . Degree. In addition, single crystal silicon can be produced by the CZ (Czochralski) method with a diameter of 50 mm in (6 mm) and 200 mm in (8 leaves). It can also be enlarged and transformed. Efficiency can exceed j 5%.

In addition, in terms of polycrystalline silicon, some people have used sheet glass manufacturing techniques to discuss various manufacturing methods. Polycrystalline silicon and amorphous silicon are also easy to increase in area, but their conversion efficiency lies between single crystal silicon and amorphous silicon. Although the above-mentioned various silicon manufacturing methods have brought about large area, conversion efficiency and improvement of manufacturing energy efficiency, compared with the current large-scale power generation methods such as nuclear power generation and thermal power generation, the unit price of power generation is higher and the manufacturing cost is The need to reduce. [Summary of the Invention] The object of the present invention is to provide an anti-thin sheet manufacturing device capable of greatly increasing the scale of production to increase the production efficiency of the island 1234592, and to reduce the manufacturing cost per unit area by epoch-making. The thin plate manufacturing method of the present invention is a method for manufacturing a thin plate by immersing the surface layer portion of the base plate in a dazzling liquid to attach the thin plate to the surface of the base plate. In this manufacturing method, after separating the thin plate formed on the surface of the base plate from the base plate, at least the peripheral portion of the thin plate is cut. By this method, the burr portion of the periphery of the thin plate generated by attaching to the base surface of the base plate is removed to obtain a flat thin plate. The so-called at least means that it is different from the removal of the burr part, and it can also be used to cut the shape of the product. After being separated from the base plate, cutting may be performed to form the sheet into a specific size. That is, the removal of the peripheral portion may be performed simultaneously with the cutting of the forming, or the cutting of the forming may be performed regardless of the removal of the peripheral portion. When the removal of the peripheral portion is performed at the same time as the above-mentioned cutting, a thin plate formed in one step can be obtained. In the above, the slabs from which the burrs are removed are cut, for example, by cutting into two pieces or three pieces. By using the formed cutting, for example, a silicon sheet for a solar cell can be obtained with high efficiency. It is better to collect the peripheral edge cut by the upper part and use it as the raw material of the silicon melt, so that the manufacturing cost can be lowered. It is preferable to perform the shape inspection on the thin plate of the cutting peripheral portion in a full or pomelo-like manner. For example, when inspecting the thin sheet of May night and sending the qualified products to the next process, it is possible to avoid wasting labor such as the subsequent solar cell manufacturing process. In the upper shape inspection, at least one of surface undulations, rough surface X ()-7-1234592 degrees, thickness, and inverse thickness distribution in the sheet can be checked. The above inspection can be used to inspect, for example, the shape of a silicon sheet that governs the performance of a solar cell. It is preferable to perform a mechanical strength test on the sheet at the peripheral edge portion in a full or grapefruit-like manner. For example, when a test is performed on a silicon sheet and a qualified product is sent to the next process, it is possible to avoid wasting the number of places such as the subsequent solar cell manufacturing process. After the above immersion treatment, the thin plate generated on the crystal growth surface of the base plate is preferably transferred in a state of being carried on the base plate. With this method, the thin plate can be prevented from falling off from the base plate. When cutting at least the peripheral portion of the thin plate, it is preferable that the free surface when the thin plate is grown is placed on a flat surface and cut. As described above, when the free surface of the thin plate is made to face upward, the cutting yield can be improved. The thin plate manufacturing device of the present invention is a thin plate manufacturing device by immersing the surface layer portion of the base plate in a dazzling solution to attach the thin plate to the surface of the base plate. The thin plate manufacturing apparatus includes a separating device for separating a thin plate attached to a base plate from the base plate, and a cutting device for cutting at least a peripheral portion of the thin plate separated from the base plate. With this configuration, a thin plate that is assembled in a solar cell or the like to find out sufficient performance can be supplied. In addition, an inspection device for inspecting the shape of the thin plate may be included. Therefore, for example, the quality of the silicon sheet can be confirmed by one side, and the sheet can be transported to the next step while being prevented, so that the silicon sheet can be prevented from deteriorating in performance after being assembled in a solar cell. -s-1234592%, it is best to enter-a strong test device that includes mechanical strength of the test sheet. With this structure, it can detect the appearance that is not visible, such as the weak part of the mast hidden inside the hard sheet to prevent it from entering. Next step: [Poor application method] Next, an embodiment of the present invention will be described using drawings. Figures A and 1B are explanatory diagrams of a thin plate manufacturing apparatus according to an embodiment of the present invention. The thin-plate manufacturing apparatus shown in FIG. 1A includes a main chamber 61 in which a crucible 9 is arranged, and two sub-chambers 6 3 and 6 4 which are continuously provided in the main chamber. An infusion mechanism 70 in which the silicon melt 10 is stored in the shooting pot 9 of the main chamber 61 can be immersed in the surface portion of the base plate 2. Inert gas is introduced into the main chamber and maintained at a pressure slightly below atmospheric pressure, that is, negative pressure. In the thin plate manufacturing apparatus of FIGS. 1A and 1B, Ar gas is introduced, and the pressure is 700 Torr. The auxiliary chamber 6 j is a sub chamber for loading into the base plate. S1 丨 [6 4 is a sub-chamber for taking out the substrate 2 with silicon taken out from the main body 6 丨. The sub-chamber for loading and the sub-chamber for taking out are located facing each other with the crucible 9 sandwiched therebetween to simplify the flow of the base plate, but the crucible is not necessarily required to be located facing each other. In some cases, two sub-chambers are arranged on the same side of the main chamber in accordance with the configuration and shape of the immersion mechanism described later. In this case, it is not necessary to provide two sub-chambers, and it is possible to provide a feeding line and a feeding line in one sub-chamber. The ambient gas in the auxiliary room is the same as that in the main room, that is, inert gas is introduced and the I pressure is maintained. Once, the method of manufacturing a thin plate will be explained. When the main room 61 is in operation, with the airtight door 83 between the sub room 63 and the main room 61 closed, the airtight 1234592 air door 8 1 is opened, and the base plate 2 is sent into the sub room 63. Next, the airtight door X I is closed, so that the ambient gas of the steep sub-chamber 63 is the same as that of the main chamber 6 I. With the operation of the three-bubble mechanism in the main chamber, the airtight door 83 between the main chamber 6 and the main chamber 6 is opened, and the base plate 2 is installed in the main chamber 61.

In the main chamber 61, the immersion mechanism 70 holds the base plate 2 and transfers it to the crucible 9. Next, the base plate is lowered, and the surface layer portion of the base plate is immersed in the silicon melt, so that the broken layer is adhered to the surface of the base plate. After that, the ground base plate 2 is lifted and separated from above the crucible 9. During this period, the attached silicon is naturally cooled, so that the solid phase grows to form a specific silicon thin plate 1. It is preferable that the silicon sheet attached to the silicon substrate is placed on the substrate, and the silicon substrate attached to the silicon substrate is rotated by some rotation mechanism.

The base plate 2 forming the silicon sheet 1 is closed at the airtightness door 81 of the sub chamber 64, and is transferred to the takeout subchamber 64 through the opened airtight door 83. The ambient gas system of the extraction sub-chamber 64 is controlled to be the same as that of the main chamber 61. After that, the base plate forming the silicon sheet is opened to the outside with the air-tight door 83 in a state where the air-tight door 83 is closed. In order to cool the silicon sheet formed on the surface of the base plate, an accelerated cooling cooling device may be provided in at least one of the main chamber 61, the sub-chamber 64, or the outside, and the base plate with silicon attached to the cooling device is transferred in the main chamber. The immersion mechanism 70 of the base plate soaked in the silicon melt can also use any conveying mechanism. In the thin plate manufacturing apparatus shown in Fig. IB, the support plate 56 is moved along the rail 52 to perform horizontal transfer. In addition, the up-and-down movement is performed by using the I holding rail 52 and the lifting device 53 up and down the ball. S () Vj (1234592 The base fe 2 is connected to the supporting plate 5 6 by the rod 5 8 and the seat 5 is provided. Begging board) 6 walking on the rail 2 and moving. When the lifting device 5 3 stops the horizontal movement on the silicon melt 丨 0 in the crucible 9 and descends, the support plate 56, the rod, the pedestal 51 and the base plate 2 are lowered simultaneously with the rail 52, and the surface portion of the base plate is lowered. Soak in Zhenxuan solution. As a result, silicon is adhered to the surface of the base plate. After that, it is good to know that :) j rises, and the base plate is separated from the liquid storage. At the above-mentioned ascending pass, it becomes a horizontal movement again, and the base plate attached with silicon is removed from the stand at the position away from the crucible. Θ '丨 Each liquid 4 has a temperature of 14 0 〇 ~ 丨 5 0 ° C, and has the function of evaporation of broken pieces. In order to protect the 4 soaking mechanism such as guide rails, a heat-shielding shield plate 5 is arranged on the stacker. 7. Fig. 2A and Fig. 2B are diagrams showing a device of another immersion mechanism different from the above-mentioned immersion mechanism. The base plate 2 is held on a pedestal 5 | and is connected to a drive mechanism 76. The driving mechanism 76 is not only movable along the axis 72. It also has a rotary motion mechanism which can rotate by itself. The silicon melt I immersed in the crucible in the base plate can be lifted down by removing the lifting mechanism 7 3 and the driving mechanism 76 including the shaft 7 2 and the base plate 2 to make the silicon melt adhere to the base plate. To manufacture Shi Xi; · Special board 1. When the sheet 1 is broken into pieces and the liquid sheet 1 is broken, the driving mechanism 7 6 is rotated as shown in FIG. 2B, so that the silicon sheet 丨 is placed on the base plate 2 & In this state, even if the adhesion of the Wan-Si sheet is reduced, the Si can be avoided; the shame sheet is detached from the base sheet 2 and dropped. Although repeated, the mechanism K that rotates the pedestal can be moved by placing a silicon thin plate during transfer, and any mechanism can be used. The last time, the process of burying the base plate and the silicon sheet related to the features of the present invention is described in the 1234592 process. In FIG. 3, the silicon sheet manufactured by the sheet manufacturing apparatus is transferred to the cooling process in the state of an Ar carbon base plate. . The chilled δ sound, "]", and the combined silicon thin plate and the base plate are separated in a thin plate separating device. The base plate separated from the broken sheet is transferred to the base plate for discrimination.] In the process, one of the three types is judged. The so-called three kinds of judgments are: (a) can be directly reused for immersion treatment, (a 2) before use in immersion treatment, + J and must be treated manually, and (a3) three types of disposal should be discarded determination. The height of the rugged bumps on the surface of the carbon-based substrate immersed in, and / or slightly hardened will decrease as the number of immersion tigers increases. When the height of the ridge-like unevenness is reduced, ..,...,…, And the ancient percent become the stone veneer of uniform thickness I 厚度 quality. In addition, as the number of uses increases, a certain bottom surface will form a hole-like recess. This hole-like recess will also be inferior to y; (a2) Judgment that processing is required before use for immersion processing means that cutting must be performed in order to form field-shaped irregularities with a specific degree on the surface of the base plate and remove the hole-like recesses. Using cutting processing to make the base Chen: ~ 形成 = formation of ridge-like bumps, and cutting can reduce the thickness. When reducing the thickness to a specific range, you can use the modified base plate to immerse it in a more molten rail: ’靟 Barrier-free ice making ~~,. At this time, you can usually use a personal computer to move the book in six directions in parallel, ΓΤ 7, the movement instruction of the lifting movement, and the tilting movement. The instructions are respectively programmed to program the Nongluoyang r 丨. ^, The soil scraper, In order to realize the renqi # j 'as prescribed by the 裎 style, the movement, the lifting movement movement, and the cranial movement movement are all assigned to each movement | Ma Shi_ motors, which are individually driven by 3 motors. The upper program is used for the eighteen system, t,, up, up tour, an independent movement (action), so that it can correspond to (s 丨) 'eat: liquid surface; m a, meaning " and ( s2) The change in thickness of the base plate is obtained; [The base plate of silicon thin plate (a3) with a thickness of 1234592 degrees should be discarded refers to the result of repeating the above cutting process, the thickness of the base plate is reduced, and the base plate exceeds the processing limit. 1 Since there is no room for cutting this type of base plate, it is classified as a discardable base plate. The base plate to be discarded should be replenished with new products put into the base plate. Fig. 4 is a diagram showing a base plate discrimination device used in a base plate discrimination process. In FIG. 4, the base plate 2 of the separation > 5th sheet is conveyed forward from the rear to the front, and the base plate sent forward is firstly passed through the surface state measuring unit M and the surface state measuring unit 12. Perform the measurement. The surface state measurement unit 11 observes the height of the ridge-like concavities and convexities on the crystal growth surface of the base plate, displays them on a specific index, and measures the shape of the crystal growth surface. The inverted state measurement unit 12 measures the thickness of the base plate, and reads the identification mark formed on the side surface and the print mark of the history of use. The surface properties, shapes, thicknesses, printed marks, etc. of the crystal growth surface are sent to the base plate management PC via the base plate information transmission path 16. Use this base board management PC I 4 to grasp the status and usage history of the target base board, and execute a decision in accordance with one of the above-mentioned decisions (al), (a2), and (a3) based on the information. The content of this determination is sent to the distribution device 15 via the determination transmission path 丨 7. The distribution device 15 distributes the target substrate to the transfer path corresponding to its determination. The print mark information is transmitted from the base board management PC I 4 to the print mark device 13 through the print mark information transmission path 18. Print mark device 1 3 According to the print mark information, print a mark on the back surface of the base plate as the shape of the print mark. Any shape can be used. For example, whenever a character or a symbol is used, printing is used. Χί) " ι) (1234592 meaning, the base plate can also have an identification mark that can identify itself. The identification mark varies from base plate to base plate. The identification mark inherent to the base plate can be used, and most base plates can be grouped into one batch. Instead, batch identification marks are used. When the base plate has identification marks, the centralized management of the use experience of the above-mentioned base plate can be more accurately performed, and a mark print can be performed before use. As the shape of the identification mark, any shape can Anyway, for example, there are methods such as printing text or symbols, serial numbers, and bar codes.

It is ideal to print the mark on the top of the sheet outside the growth surface of the sheet, specifically on the side or back. However, some mark shapes can also be printed on the growth surface. In this case, the mark can be transferred to the sheet, and the base sheet used or its experience can be grasped only by looking at the sheet. By using the above-mentioned printed marks, in the event of an unexpected situation that confuses the original properties of the base plate, it is also possible to re-learn the experience of use. Utilizing the base plate reuse system, it is possible to reuse the base plate while maintaining a high yield to produce a silicon thin plate of a certain quality or higher.

Next, the silicon sheet will be described. In Fig. 3, a silicon thin plate separated from a base plate by a thin plate separating device is transferred to an end cutting device, and the burrs at the ends are cut. The burrs at the ends can be used as raw materials for the silicon solution as scrap. In addition, the silicon thin plate in which the end portion is removed is transferred to the thin plate inspection process for inspection, and the qualified product is put into the production process of the solar battery. In addition, defective products can be used as raw materials for silicon melts. Next, the cutting process of the end of the silicon sheet will be described. FIG. 5 shows the state where the silicon sheet 1 is formed on the crystalline growth surface of the base plate 2-the silicon sheet at the top -14-12592592 when the good surface is attached to the bite The last contact surface with the broken liquid is a free good surface. A Silicon is not only formed on the I surface of the base plate, but can also be formed on the surface of the test surface that is the same as [ΐ]. Secondly, as shown in FIG. 6, the vacuum suction device 3 sucks the silicon thin plate 1 and separates it from the base plate 2. The crystal growth surface 2a of the base plate is separated from the broken thin plate. Next, as shown in FIG. 7, when the end portion 4 of the corner-shaped silicon thin plate is cut off by the cutting portion 29, a silicon thin plate 5 as a product can be obtained. Next, the process of cutting an end part is demonstrated in detail using FIG. 8A and FIG. 8B. Fig. 8A is a perspective view schematically showing a silicon sheet placed on the suction table 25 of the end cutting device, and Fig. 8B is a sectional view schematically. The end burrs are cut along the dotted line in Fig. 8A. The silicon sheet shown in Figs. 8A and 8B contains the burrs 4 at the ends. The rare sheet is placed on the suction table 25 of the end cutting device with the free surface 1a as the top edge. FIG. 9 is a view of an XY stage showing a state where a silicon thin plate is not placed. As shown in FIG. 9, the suction stage is integrated with the XY stage 23. The shape of the suction table is higher than the height of the end burrs, smaller than the inner circumference of the end burrs, and larger than the surroundings of the broken sheet. Therefore, when the broken sheet is fixed to the suction table, the end burrs will not interfere with the X Y table 23 and the suction table. In FIG. 8A and FIG. 8B, the silicon sheet I with a burr on the end is mounted on the XY stage 23: This silicon sheet 1 is operated by the XY stage while using the laser light east 2 emitted by the cutting unit 22 丨Cut off. Fig. 10 is a view showing a silicon sheet with the end portion cut off. The silicon sheet 5 as a product is sucked up by the vacuum suction device 24 and transferred to a specific processing step. Furthermore, the end hairs 4 can be used as a source of silicon melt. Next, the cutting process of forming a silicon sheet 1234592 which is a 4K silicon sheet separated from a substrate is described with reference to FIG. At this time, using the end cutting device with the SA and boring 8 B l ,,] pain, while scanning the XY stage 23, while using the light emitted from the cutting unit 2 2 to shoot the light east 2 丨, Shao Maobian 4 cuts into the same weight and is formed into 4 sheets of sand. After forming, as in Fig. I0, the four crushed sheets were each sucked up by a vacuum suction device and transferred to a specific processing step. As another actual drag mode, the above-mentioned cutting may be performed by scanning the laser light east 21 emitted from the cutting unit 22. · As another embodiment, the cutting of the end portion and the cutting of the forming portion may be performed by a separate cutting device. In this case, the flow time required for cutting can be shortened compared to using a single cutting device. The cutting method of the silicon sheet is not limited to laser, and a cutter, plasma cutting, electron beam cutting, and other arbitrary cutting methods may be used. Figure 丨 2 is a diagram showing an inspection process of a silicon thin plate whose end is cut off. The silicon sheet 5 is assumed to be moved from the left end of the figure to the right. The shape of the silicon thin plate 5 mounted on the X-axis table 32 is checked by the shape inspection unit 31. Next, the silicon thin plate 5 is transferred to a strength test unit 33, where a specific bending stress is applied, and it is tested whether or not it has been damaged. This strength test is a kind of damage test. Therefore, at most, only a certain number of silicon sheets are extracted from a batch of silicon sheets and tested. In addition, in the case of a normal thin sheet, it is not necessary to perform the test as long as it is a load I test in which bending stress is not caused to the extent that it causes damage. The results of these shape inspections and strength tests are transmitted to the sheet management PC 35 via the information transmission path 36. The sheet management PC 35 determines whether it is a pass or fail based on the above-mentioned inspection results, and then transmits the pass to the pass / fail distribution device 34 via a pass or fail determination. The pass / fail distribution device 34 is based on! S (W (1234592) The pass / fail determination described above allocates the target silicon sheet to the transfer path corresponding to the determination. Figures 3 and I 4 are examples of the thin plate manufacturing device. In the immersion mechanism shown in Fig. 13, the supporting plate 56 with guide holes is allowed to travel along the rail 52. The lifting rails 54, 55 are attached to the silicon melt 10, so that the pedestal is close to the silicon melt, and the crucible is placed in the crucible. A shallow U-shaped rail is formed on the upper side. The upper end of the rod 5 8 is freely fixed to the lifting rails 5 4 and 5 5. The base plate 2 is fixed to the pedestal 5 1 so as to extend along the holder 52, 54 and 55. When walking, when it is close to the financial disaster, the rails 5 4 and 5 5 will take the shape of a smooth gourd shape and approach the silicon melt I 〇. At this time, the rod is approached by the guide hole opened in the support plate 56 On the silicon melt side, as a result, the surface layer portion of the base plate 2 can be immersed in the silicon melt. After that, the rails 5 4 and 5 5 follow the upward direction. The subsequent actions are the same as those in FIG. 1B. Figure 14 The illustrated thin-plate making device fixes the base plate 2 at a base plate connector 42 arranged around the rotation shaft 41. According to The rotation of the rotating shaft 41 causes the base plate connector to move. The rotating shaft is intermittently rotated while the rotating shaft 41 is brought close to the silicon melt to form a silicon thin plate on the surface of the base plate 2. (Example) Next, a description will be given. Implementation Example 1 In the lean example, a survey was conducted on the number of times the substrate was used, and the method shown in Figure I 2 was used to check a thin plate made of a carbon substrate substrate immersed in a silicon melt in a specific secondary education. In this reward example, after removing the thin plate from the base plate and cutting it off, if the shape of -17-1234592 is checked, the surface of the pot is adjusted to undulate, thick !, and the thickness / 厚 distribution is good. The minimum length is defined as the maximum fluctuation of the filter defined by IS Β060 1-I 994 as less than 300 μηι. The thickness and thickness distribution are based on the overall thickness of the plate at 3 50 μm: r 5 ( ) μm is used as the basis for passing. In other words, the sheet that fails to reach the inspection process due to poor growth, holding, breakage, defects, etc. of the sheet is calculated as failing. The results are shown in Table 丨.

Table I 1 1 The number of times the substrate is used 1 j_ | 1 time 10 times 丨 50 times | 丨 | 100 times | 500 times 丨 1,000,4;! Qualification rate of silicon sheet 98% 98%; 1 98% 98% 9 7% 8 3 ° 〇 According to Table I, the base plate has 97 ° even after being used 500 times. The pass rate, therefore, confirm that most substrates can be used 500 times. Example 2 In Example 2, an investigation was conducted on the number of cutting operations of the base plate and the change in the thickness of the base plate. Table 2 shows the thickness of the base plate accompanying the number of cutting operations, and the progress of the inspection results of the thin plate. The inspection method of the thin plate is the same as that of the first practical example. Table 2 Processing times 0 times 2 times I 1 丨 4 times 1 丨 6 times 8 times Thickness of the base plate (rmn) I 20 16 12 1 1 8 4 Qualification rate of silicon sheet without correction track 98% 75%! 4 5% 0 ° 〇0 ° 〇 Qualification rate of silicon sheet when the track is corrected 98% 98% i 9 7% 9 7 ° 0 °° According to Table 2, as the number of cutting operations increases, the thickness fr of the base plate decreases. The reduction is 2 mm per ½ cutting process. In turn, 〃Γ says that the cutting cost per cutting process is 2 mm. According to Table 2 ,; f package S () VK, -IS-1234592 In the case of the base plate, the track is not corrected. When the number of cutting operations is 2 times, the pass rate of the silicon thin plate is 75%, and the yield rate is considerably deteriorated. In addition, there is a case where the track is corrected, and it is confirmed that it can maintain 97 ° even after 6 cutting operations. Pass rate. When 8 cutting operations are performed, the thickness becomes too thin to be soaked. Example 3 In Example 3, whether the end of the silicon sheet is cut or not, and whether there is inspection after cutting, is related to the product yield. Survey.

The inspection method after cutting is the same as in Example 1. Next, an example of a solar cell manufacturing process will be described. Clean the sheet, suitable for tissue etching, diffusion layer formation, and oxide film removal. A general method performed in the order of formation of an anti-reflection film, back surface etching, back surface electrode formation, and light receiving surface electrode formation. At this time, the cracked and defective products during the processing and the sheet with the performance (conversion efficiency) lower than 12% after the manufacturing were classified as unacceptable. The results are shown in Table 3. Qualified rate of silicon sheet is too low. 1% of the battery manufacturing process is good! The overall yield of sheet is not cut, no inspection-84% 84% sheet is not cut, inspected 98% 86% 84% sheet is cut No inspection — 95% 95% of the sheet is cut, 98% 97% 95% of the sheet is cut. When the end of the silicon sheet is cut, the product yield after the solar cell manufacturing process can be improved. When the end portion is left, the screen cannot contact the surface that is in contact with the base plate during electrode printing, so electrode printing failure may occur, resulting in deterioration of characteristics. That is, the presence or absence of inspection does not change the overall yield, but the yield of the solar cell 19 1234592 shows that the yield is not inspected. One of the yields is poor. The second result is that the fluctuations and thickness distribution of the silicon sheet are outside the acceptable standard. Forming a uniform anti-reflection film, that is, an electrode cannot be formed uniformly, is a cause of poor characteristics. Therefore, before entering the solar cell manufacturing process, by using a prior inspection to remove defective silicon sheets, waste in subsequent processes can be saved. Implementation Example 4 In this embodiment, an investigation is performed on the relationship between the top and bottom of the silicon sheet and the base sheet immediately after the immersion treatment and the state of the silicon sheet when the end of the silicon sheet is cut. The results are shown in Table 4. Table 4 Conveying state Cutting state Passing rate of passing Passing rate of passing overall yield Rate of growth during transport ~ upward Solution side during cutting. ) Up 100% 99% 99 ° 〇The growth side is downward when transported The solution side is 25% 99% 25% The growth side is upward when transported The melt side is 100% 85% when cut 85 ° 〇The growth surface is downward when transported, the melt surface is 25% when cut, 85% 2 丨%) The growth surface during transport: the crystal growth surface of the substrate y) '丨 Liquid-receiving surface: broken 7 thin plates The free surface is based on Table 4. When conveying after immersion, if the sheet is directed to the lower side, the silicon sheet will fall off from the base sheet. Therefore, make sure that the silicon sheet is placed on the base plate to prevent it from falling off. In addition, when the end face of the silicon sheet is cut on the XY stage, when the molten surface (free ridge) of the silicon sheet is directed upward, the overall yield can be greatly improved. -2 ()-1234592 In the above description, the embodiments of the present invention have been described. After all, the reward forms of the present invention disclosed above are merely examples, and the scope of the present invention is not limited to the embodiments of these inventions. . The scope of the present invention is disclosed by the scope of the patent application. In addition, it includes all changes within the meaning and scope equal to the scope of the patent application. Using the sheet manufacturing method and the sheet manufacturing device of the present invention can improve the manufacturing efficiency of the sheet and reduce the manufacturing cost . Industrial Applicability By using the thin plate manufacturing method and the thin plate manufacturing apparatus of the present invention, for example, a high-quality silicon thin plate can be manufactured with high efficiency, and the manufacturing cost can be reduced. Therefore, it can be expected to be widely used in areas where price competition with other power generation methods such as solar cells is fierce. [Brief description of the drawings] Figures 丨 A and 1B are diagrams illustrating the immersion mechanism of the embodiment of the present invention, Figure 1 is a layout diagram, and Figure 丨 B is a perspective view of the immersion mechanism. FIG. 2A and FIG. 2B are diagrams showing a device of another immersion mechanism according to an embodiment of the present invention, FIG. 2A is a diagram showing a lifting action for immersion, and FIG. 2B is a diagram showing a silicon thin plate attached to a stand by a rotating mechanism Diagram of the state. Fig. 3 is a view showing a manufacturing process of a thin plate according to an embodiment of the present invention. FIG. 4 is a diagram showing a base plate discriminating device of the thin plate manufacturing process of FIG. 3. FIG. Fig. 5 is a view showing a silicon thin plate formed on the surface of a base plate. Figure 4 shows the four steps of separating the sheet by the base plate. Fig. 7 is a view showing a state where the end portion of the silicon thin plate is cut.

8A and 8B are diagrams showing a method for cutting the edge of a silicon sheet, 8A 1234592, and FIG. 8B is a sectional view. _ 9 is a table of X and Y stages showing the state where no silicon thin plate is placed _ 'Figure 丨 0 is a diagram of a process for transferring a silicon thin plate whose end is cut off. Figure IX is a diagram showing a method of cutting from a silicon sheet into four silicon sheets. Figure 丨 2 is a diagram of a process for inspecting a silicon sheet whose ends are cut away. Fig. 3 is a diagram illustrating another device of the immersion mechanism in the embodiment of the present invention. Fig. 14 is a diagram illustrating still another device of the immersion mechanism in the embodiment of the present invention. [Illustration of Symbols] 1 silicon sheet 2 base plate 3 vacuum suction device 4 peripheral edge 5 silicon sheet I a free surface 2a surface 9 crucible] 0 silicon melt II surface state measurement unit 12 surface state measurement unit · I 3 Printing standard equipment

14 Base board management PC 1234592 15 Distributor 16 Base board information transmission path 17 Judgment transmission path 18 Printed marker information transmission path 2 1 Laser light east 2 2 Cutting unit 23, 32 XY stage 2 4 Vacuum suction device 2 5 Suction Table 29 Cutting section 3 1 Shape inspection unit JJ strength test unit 34 Pass / fail distribution device 3 5 Sheet management PC 3 6 Information transmission path 3 7 Transmission path 4 1 Rotary shaft 42 Base plate connector 5 1 Stand 52 Rail 5 3 Lifting device 54. 55 Lifting # 九 5 6 Support plate

Sichuan 1234592 5 7 Shield 5 8 Rod 6 1 Main chamber 6 3.64 Auxiliary chamber 70 Immersion mechanism 72 Axis 7 q Lifting motion mechanism 76 Drive mechanism 8 1,83 Airtight door X () V) (

Claims (1)

1237645 ^ 4 ^] t tf t Chinese patent application scope replacement version (August 1993) Pick up and apply for patent scope: 1. 2. 3. 4. A method for manufacturing a thin plate, which uses the surface layer of the I base plate to soak In the silicon melt, the soaking process of attaching the thin plate to the surface of the foot of the soil display board is used to manufacture the thin plate; the thin plate formed on the aforementioned substrate is made of clay, and the surface is separated from the base plate. Then, cut at least the peripheral portion of the sheet. For example, the thin plate system and the bang pole method of the scope of application for the patent, in which the aforementioned peripheral part of the cut foot is recovered and used as the raw material of the aforementioned melt. For example, the method of manufacturing a thin plate of the "Scope of Patent" item, wherein the cut sheet is subjected to a shape check in whole or in a sampling manner. For example, in the method for manufacturing a thin plate according to the third aspect of the patent application, in the aforementioned shape inspection, at least one of surface undulation, surface roughness, thickness, and thickness distribution in the thin plate is checked. 5. If the sheet manufacturing method of item i of the patent scope is applied, the mechanical strength test of the cut sheet shall be carried out in full or by sampling. 0 6. The sheet manufacturing method of item i of the patent scope Wherein, after the aforementioned immersion treatment, the thin plate generated on the crystal growth surface of the aforementioned base plate is transferred in a state of being carried on the aforementioned base plate. 7. The sheet manufacturing method according to item 1 of the scope of patent application, wherein when cutting at least a peripheral portion of the aforementioned sheet, the free surface when the sheet is grown is directed upward, and the aforementioned sheet is placed on a plane and cut. 8 · A method for manufacturing a thin plate, which uses a surface layer of a carbon base plate to be immersed 86396-9308l2.DOC 1234592 bubble: a silicon melt to immerse the thin plate to the surface of the base plate to manufacture the thin plate; After opening the y to gray, the surface of the base plate is separated from the base plate, and then the formed plate is cut to give the thin plate a specific size. 9. For example, the method for manufacturing a thin plate according to item 8 of the patent, wherein the cut edge portion is recovered and used as a raw material of the melt. 10. The method for manufacturing a sheet according to the scope of the patent application, wherein the shape check is performed on the cut sheet in whole or in a sampling manner. H. The thin plate manufacturing method according to item 10 of the patent application scope, wherein in the shape inspection, at least one of surface undulation, surface roughness, thickness, and thickness distribution in the thin plate is checked. 12. If the sheet manufacturing method according to item 8 of the patent, please perform a mechanical strength test on the sheet of the bladed fe / f in full or by sampling. 13. The thin plate manufacturing method according to item 8 of the scope of patent application, wherein after the aforementioned immersion treatment, the thin plate generated on the crystal growth surface of the aforementioned base plate is transferred in a form of being carried on the aforementioned base plate. M. The sheet manufacturing method according to item 8 of the patent application scope, wherein when cutting at least the peripheral portion of the aforementioned sheet, the sheet with the free surface facing up when the sheet is grown is placed on a plane and cut . 1 ··· A thin plate manufacturing device, which uses a soaking treatment to immerse / encapsulate the surface layer portion of a carbon base plate in a hard liquid to attach the thin plate to the surface of the base plate to manufacture the thin plate; and includes: 86396-930812.DOC 1234592 The knife-off device is a device that separates the thin plate attached to the base plate by the base plate; and a cutting device that cuts at least the peripheral portion of the thin plate separated by the base plate. 16. The thin-plate manufacturing device according to item 15 of the scope of patent application, which further includes an inspection device for checking the shape of the aforementioned thin plate. 17. The thin plate manufacturing device according to item 15 of the scope of patent application, which further includes a strength test device for testing the mechanical strength of the thin plate. 86396-930812.DOC