TWI234592B - Thin sheet manufacturing method, and thin sheet manufacturing apparatus - Google Patents
Thin sheet manufacturing method, and thin sheet manufacturing apparatus Download PDFInfo
- Publication number
- TWI234592B TWI234592B TW092117645A TW92117645A TWI234592B TW I234592 B TWI234592 B TW I234592B TW 092117645 A TW092117645 A TW 092117645A TW 92117645 A TW92117645 A TW 92117645A TW I234592 B TWI234592 B TW I234592B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin plate
- sheet
- base plate
- manufacturing
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
1234592 玖、發明說明: 【發明所屬之技術頜域】 本發明係關於薄板製造方法、薄板製造裝置,更具體言 之,係關於矽薄板製造方法、矽薄板製造裝置。 【先前技術】1234592 发明 Description of the invention: [Technical jaw field to which the invention belongs] The present invention relates to a thin plate manufacturing method and a thin plate manufacturing device, and more specifically, to a silicon thin plate manufacturing method and a silicon thin plate manufacturing device. [Prior art]
矽可使用於消費用太陽電池。矽之變換效率雖依單晶矽 、多晶矽、非晶質矽之順序而降低,另一方面,成本也依 上述之順序而务於降低及大面積化。其中,非晶質矽由於 可利用 S 丨 Η 4 為原料,以 C V D (C h e rrn c a 1 V a ρ 〇 t' D e ρ 〇 s 11 丨 ο η : 化學氣相沉積)法以沉積於玻璃、塑膠、金屬基板等之上, 故成本較低,且易於大面積化,其變換效率最高约1 2。。程 度。 又,單晶矽可利用CZ (Czochralski :切克勞斯基)法製造 直徑丨5 0 m in ( 6忖)及2 0 0 m in (8叶)之碎錠,也可大型化,其 變換效率可超過j 5%。Silicon can be used in consumer solar cells. Although the conversion efficiency of silicon is reduced according to the order of single crystal silicon, polycrystalline silicon, and amorphous silicon, on the other hand, the cost is also reduced and increased in area according to the above order. Among them, amorphous silicon can be deposited on glass by using CVD (Cherrn ca 1 V a ρ 〇t'D e ρ 〇s 11 丨 ο η: chemical vapor deposition) method because S Η 4 can be used as a raw material. , Plastic, metal substrates, etc., so the cost is low, and it is easy to large area, and its conversion efficiency is about 12 at the highest. . Degree. In addition, single crystal silicon can be produced by the CZ (Czochralski) method with a diameter of 50 mm in (6 mm) and 200 mm in (8 leaves). It can also be enlarged and transformed. Efficiency can exceed j 5%.
另外,在多晶♦方面,有人使用板玻璃之製造技術等, 探討各種製造方法。多晶矽與非晶質矽同樣容易大面積化 ,但其變換效率位於單晶矽與非晶質矽之中間。 上述各種矽之製造方法雖然都帶來大面積化、變換效率 及製造能率之提高,但與當前之核能發電及火力發電等大 規模之發電方式相比,其發電單價偏高,其製造成本有降 低之必要。 【發明内容】 本發明之目的在於提供可利用生產規模之擴大大幅提岛 1234592 製造效率,且劃時代地降低單位面積之製造成本之薄板製 造方法反薄板製造裝置。 本發明之薄板製造方法係利用將基底板之表層部浸泡於 炫液,使薄板附著於該基底板之表面之浸泡處理,籍以製 造薄板之方法。在此製造方法中,在將形成於基底板之表 面之薄板與基底板分離後,切斷該薄板之至少周緣部。 利用此方法,除去附在基底板之惻面而產生之薄板之周 . 緣部之毛邊部分,獲得平坦之薄板。所謂至少,係指有別# 於毛邊部分之除去,而也可再施行成形為製品尺寸之成形 之切斷之意。又,也可在與基底板分離後,施行成形之切 斷,使該薄板呈現特定之尺寸。即,既可與上述成形之切 斷同時施行上述周緣部之除去,也可與周緣部之除去無關 地施行成形之切斷。與上述成形之切斷同時施行上述周緣 部之除去時,可獲得以一工序成形之薄板。 在上述中,對除去毛邊之薄板例如以切取成2片或切取成 3片等切取成多片之方式施行成形之切斷。利用施行成形之 切斷,可高能率地獲得例如太陽電池用之矽薄板。 最好回收上逑切斷之周緣部,將其使用作為矽熔液之原 料,如此可較低製造成本。 最好對上述切斷周緣部之薄板,以全數或柚樣方式施行 形狀檢查。例如,對5夕薄板施行檢查,將合格品送交至次 一工序時,即可避免浪費例如其後之太陽電池製造工序之 處迚工數。 在上逑形狀檢查中,可檢查薄板中之表面起伏、表面粗 X() - 7 - 1234592 度、厚度、反厚度分布中之至少1種。 可利用上述檢查,檢查例如支配太陽電池之性能之矽薄 板之形狀。 最好對上述切斷周緣部之薄板,以全數或柚樣方式施行 機械的強度之試驗。例如,對矽薄板施行試驗,將合格品 送交至次一工序時,即可避免浪費例如其後之太陽電池製 造工序之處理工數。 上述浸泡處理之後,產生於基底板之結晶生長面之薄板 最好以承載於基底板之上之形態被移送。利用此方法,可 防止薄板由基底板脫落。 切斷上述薄板之至少周緣部時,最好使該薄板生長時之 自由表面朝上載置於平面上而加以切斷。如上所述,使薄 板生長時之自由表面朝上時,可提高切斷良率。 本發明之薄板製造裝置係利用將基底板之表層部浸泡於 炫液,使薄板附著於該基底板之表面之浸泡處理,藉以製 造薄板之薄板製造裝置。在此薄板製造裝置中,包含有分 離裝置,其係在將附著於基底板之薄板由該基底板分離者 :及切斷裝置,其係切斷由基底板分離之薄板之至少周緣 部者。利用此構成,可供應組裝於太陽電池等,以發探充 分性能之薄板。 另外,也可包含檢查薄板之形狀之檢查裝置。 因此,可依面確認例如矽薄板之品質,一面將薄板輸送 至次一工序,故可避免在組裝於太陽電池後發生矽薄板性 能劣化之事態。 - s - 1234592 %外,最好進—爹包含試驗薄板之機械的強度之強試 驗装置 利用此構成,可檢測不顯現於外觀,例如隱藏在硬薄板 内部之桅弱部等,以防止其進入次一工序: 【貧施方式】 其次,利用圖式,說明本發明之實施形態。圖丨A及圖1B 係本發明之實施形態之薄板製造裝置之說明圖。圖IA所示 之薄板製造裝置係具有配置坩堝9之主室61、及連續於該主 室而設置之2個副室6 3、6 4。在主室6 1之射堝9配置有存積 著矽熔液1 0,可使基底板2之表層部浸泡於該矽熔液1 0之浸 泡機構70。主室中導入不活性氣體,並保持略低於大氣壓 之壓力,即負壓。在圖1 A及圖1 B之薄板製造裝置中,係導 入Ar氣,其壓力為7 00 Tor r。 副里6 j係送入基底板用之裝入用副室。S1丨[6 4係由主呈 6丨取出附著矽之基底板2用之取出用副室。裝入用副室與取 出用副室係利用配置於夾著坩堝9而位於相面對之位置,以 簡化基底板之流程,但未必一定要夾著坩堝而位於相面對 之位置。有時也依照後面說明之浸泡機構之構成及形狀, 在主室之相同璧側配置2個副室。此時也可不必設置2個副 室,而在1個副室設置送入用管線與送出用管線。副室之環 境氣體與主室之環境氣體相同,即導入不活性氣體,並保 持I壓。 戽次,說明有關薄板製造方法。主室6 1在運轉中時,在 關閉副室63與主室6 1間之氣密性門83之狀態下,開啟氣密 1234592 性門8 1,將基底板2送入副室63。接著,關閉氣密性門X I, 藉以陡副室63之環境氣體與主室6 I相同。此浚,隨著主室 之3泡機構之運轉,開啟與主室6 I間之氣密性門83,將基 底板2裝入主室6 1。In addition, in terms of polycrystalline silicon, some people have used sheet glass manufacturing techniques to discuss various manufacturing methods. Polycrystalline silicon and amorphous silicon are also easy to increase in area, but their conversion efficiency lies between single crystal silicon and amorphous silicon. Although the above-mentioned various silicon manufacturing methods have brought about large area, conversion efficiency and improvement of manufacturing energy efficiency, compared with the current large-scale power generation methods such as nuclear power generation and thermal power generation, the unit price of power generation is higher and the manufacturing cost is The need to reduce. [Summary of the Invention] The object of the present invention is to provide an anti-thin sheet manufacturing device capable of greatly increasing the scale of production to increase the production efficiency of the island 1234592, and to reduce the manufacturing cost per unit area by epoch-making. The thin plate manufacturing method of the present invention is a method for manufacturing a thin plate by immersing the surface layer portion of the base plate in a dazzling liquid to attach the thin plate to the surface of the base plate. In this manufacturing method, after separating the thin plate formed on the surface of the base plate from the base plate, at least the peripheral portion of the thin plate is cut. By this method, the burr portion of the periphery of the thin plate generated by attaching to the base surface of the base plate is removed to obtain a flat thin plate. The so-called at least means that it is different from the removal of the burr part, and it can also be used to cut the shape of the product. After being separated from the base plate, cutting may be performed to form the sheet into a specific size. That is, the removal of the peripheral portion may be performed simultaneously with the cutting of the forming, or the cutting of the forming may be performed regardless of the removal of the peripheral portion. When the removal of the peripheral portion is performed at the same time as the above-mentioned cutting, a thin plate formed in one step can be obtained. In the above, the slabs from which the burrs are removed are cut, for example, by cutting into two pieces or three pieces. By using the formed cutting, for example, a silicon sheet for a solar cell can be obtained with high efficiency. It is better to collect the peripheral edge cut by the upper part and use it as the raw material of the silicon melt, so that the manufacturing cost can be lowered. It is preferable to perform the shape inspection on the thin plate of the cutting peripheral portion in a full or pomelo-like manner. For example, when inspecting the thin sheet of May night and sending the qualified products to the next process, it is possible to avoid wasting labor such as the subsequent solar cell manufacturing process. In the upper shape inspection, at least one of surface undulations, rough surface X ()-7-1234592 degrees, thickness, and inverse thickness distribution in the sheet can be checked. The above inspection can be used to inspect, for example, the shape of a silicon sheet that governs the performance of a solar cell. It is preferable to perform a mechanical strength test on the sheet at the peripheral edge portion in a full or grapefruit-like manner. For example, when a test is performed on a silicon sheet and a qualified product is sent to the next process, it is possible to avoid wasting the number of places such as the subsequent solar cell manufacturing process. After the above immersion treatment, the thin plate generated on the crystal growth surface of the base plate is preferably transferred in a state of being carried on the base plate. With this method, the thin plate can be prevented from falling off from the base plate. When cutting at least the peripheral portion of the thin plate, it is preferable that the free surface when the thin plate is grown is placed on a flat surface and cut. As described above, when the free surface of the thin plate is made to face upward, the cutting yield can be improved. The thin plate manufacturing device of the present invention is a thin plate manufacturing device by immersing the surface layer portion of the base plate in a dazzling solution to attach the thin plate to the surface of the base plate. The thin plate manufacturing apparatus includes a separating device for separating a thin plate attached to a base plate from the base plate, and a cutting device for cutting at least a peripheral portion of the thin plate separated from the base plate. With this configuration, a thin plate that is assembled in a solar cell or the like to find out sufficient performance can be supplied. In addition, an inspection device for inspecting the shape of the thin plate may be included. Therefore, for example, the quality of the silicon sheet can be confirmed by one side, and the sheet can be transported to the next step while being prevented, so that the silicon sheet can be prevented from deteriorating in performance after being assembled in a solar cell. -s-1234592%, it is best to enter-a strong test device that includes mechanical strength of the test sheet. With this structure, it can detect the appearance that is not visible, such as the weak part of the mast hidden inside the hard sheet to prevent it from entering. Next step: [Poor application method] Next, an embodiment of the present invention will be described using drawings. Figures A and 1B are explanatory diagrams of a thin plate manufacturing apparatus according to an embodiment of the present invention. The thin-plate manufacturing apparatus shown in FIG. 1A includes a main chamber 61 in which a crucible 9 is arranged, and two sub-chambers 6 3 and 6 4 which are continuously provided in the main chamber. An infusion mechanism 70 in which the silicon melt 10 is stored in the shooting pot 9 of the main chamber 61 can be immersed in the surface portion of the base plate 2. Inert gas is introduced into the main chamber and maintained at a pressure slightly below atmospheric pressure, that is, negative pressure. In the thin plate manufacturing apparatus of FIGS. 1A and 1B, Ar gas is introduced, and the pressure is 700 Torr. The auxiliary chamber 6 j is a sub chamber for loading into the base plate. S1 丨 [6 4 is a sub-chamber for taking out the substrate 2 with silicon taken out from the main body 6 丨. The sub-chamber for loading and the sub-chamber for taking out are located facing each other with the crucible 9 sandwiched therebetween to simplify the flow of the base plate, but the crucible is not necessarily required to be located facing each other. In some cases, two sub-chambers are arranged on the same side of the main chamber in accordance with the configuration and shape of the immersion mechanism described later. In this case, it is not necessary to provide two sub-chambers, and it is possible to provide a feeding line and a feeding line in one sub-chamber. The ambient gas in the auxiliary room is the same as that in the main room, that is, inert gas is introduced and the I pressure is maintained. Once, the method of manufacturing a thin plate will be explained. When the main room 61 is in operation, with the airtight door 83 between the sub room 63 and the main room 61 closed, the airtight 1234592 air door 8 1 is opened, and the base plate 2 is sent into the sub room 63. Next, the airtight door X I is closed, so that the ambient gas of the steep sub-chamber 63 is the same as that of the main chamber 6 I. With the operation of the three-bubble mechanism in the main chamber, the airtight door 83 between the main chamber 6 and the main chamber 6 is opened, and the base plate 2 is installed in the main chamber 61.
在主室6 1中,浸泡機構70夾持基底板2而將其移送至坩堝 9之上。接著,使基底板下降,將基底板之表層部浸泡於矽 熔液丨0,使碎層附著在基底板之表面。此後,使附著碎之 基底板2上升,離開坩堝9之上方。在此期間,附著之矽會 被自然冷卻,使固相生長而形成特定之矽薄板1。 最好以使附著而形成於基底板之矽薄板載置於基底板之 狀態,利用某些旋轉機構使附著矽薄板之基底板旋轉。In the main chamber 61, the immersion mechanism 70 holds the base plate 2 and transfers it to the crucible 9. Next, the base plate is lowered, and the surface layer portion of the base plate is immersed in the silicon melt, so that the broken layer is adhered to the surface of the base plate. After that, the ground base plate 2 is lifted and separated from above the crucible 9. During this period, the attached silicon is naturally cooled, so that the solid phase grows to form a specific silicon thin plate 1. It is preferable that the silicon sheet attached to the silicon substrate is placed on the substrate, and the silicon substrate attached to the silicon substrate is rotated by some rotation mechanism.
形成矽薄板1之基底板2在確認副室64之氣密性門8 1關閉 ,經由開啟之氣密性門83被移送至取出用副室64。取出用 副室64之環境氣體係被控制於與主室6 1之環境氣體相同。 此後,形成矽薄板之基底板在氣密性門83關閉之狀態下, 開啟氣密性門8丨而被送出至外部。為了冷卻形成於基底板 表面之矽薄板,也可在主室6 1、副室64或外部中之至少1處 設置加速冷卻之冷卻裝置,利用該冷卻裝置附著矽之基底 板 在主室中移送基底板,使其浸泡於矽熔液丨〇之浸泡機構 70也可使用任何輸送機構。 在圖IB所示之薄板製造裝置中,使支持板56沿著軌52行 走,以施行水平方向之移送。又,上下方向之移送係利用 I持軌52,沿著滾珠上下之升降裝置53予以執行 S()Vj( 1234592 基底fe 2宇於被桿5 8連結於支持板5 6之合座5卜隨乞持 板)6在軌2上行走而移動。當升降裝置5 3在坩堝9中之矽熔 液丨0上停止水平方向之移動而下降時,支持板56、桿、 台座51及基底板2會與軌52同時下降,將基底板之表層部浸 泡於珍炫液。其結果,使矽附著於基底板之表面。此後, 升丨幸表篁:)j上升,使基底板脫離丨容液。在上述上升传再 變成水平運動,在離開坩堝之位置由台座卸下附著矽之基 底板。Θ ’丨各液4溫度尚達1 4 0 〇〜丨5 〇 〇 °c,且有碎之蒸鍍作 用,為了保沒導軌等4浸泡機構,在堆禍上配置隔熱性之 遮蔽板5 7。 圖2 A及圖2B係表示與上述浸泡機構不同之另一浸泡機 構之裝置之圖。基底板2係被保持於台座5 |,並連結於驅動 機構76。驅動機構76不僅可沿著軸72.移動,且具有其本身 可旋轉之旋轉運動機構。在基底板浸泡於坩堝内之矽熔液 I除’升降運動機構7 3可使包含軸7 2在内之驅動機構7 6及 基底板2等構件一併下降,使矽熔液附著於基底板,以製造 石夕;·專板1。 在开J成附著碎:液4碎薄板1後,送出之際’驅動機構7 6 如圖2B所示旋轉,使矽薄板丨採取載置於基底板2之上之狀 &。利用此狀態’即使萬—矽薄板之附著力降低,也可避 兄矽;辱板由基底板2脫離而掉落。雖屬重複,但使台座旋轉 之機構K要屬於在移送之際可載置矽薄板而移動,任何機 構均可使用。 尾次,說明有關本發明之特徵之基底板與矽薄板之處埋 1234592 工序、在圖3中,薄板製造裝置所製造之矽薄板係A r 碳製基版板之狀態下被移送至冷卻工序。被冷δ卩丄声、, 】’ >、合卩 之矽薄板與基底板係在薄板分離裝置被分離。 與碎薄板分離之基底板係被移送至基底板判別. ]工序,被 施行3種中之1種之判定。所謂3種判定,係指:( a )可直接 再使用於浸泡處理、(a 2)在使用於浸泡處理之前,+ J 而要力〇工 處理、及(a3)應予廢棄處分之3種判定。浸泡在於、、 /咯硬之碳 製基底板之表面之田埂狀凹凸之高度會隨著浸泡虎 ^ 數之增加而減少。田埂狀凹凸之高度減少時,.、、r …、古%成均 勻厚度I咼品質之石夕薄板。又,隨著使用次數之辦加 某 底板表面會形成孔狀凹部。此孔狀凹部也會劣 y ;辱板之 表面性質狀態。 (a2)在使用於浸泡處理之前需要加工處理之判定係音味 著必須施行切削加工,以便再於基底板之表面形成特定鬲度 之田埂狀凹凸’並除去孔狀凹部。利用切削加工,使基辰: 〜伙=形成祈的田埂狀凹凸,利用切削可減少厚度。減少厚 度至特定範圍時,即可利用修正基底板浸泡於较熔液之軌: ’靟無障礙蚰制冰一 〜 、 .绝夕溽板。此時,通常可利用個人電腦將 平方向移書六并人 ,ΓΤ 曰7、升降動作移動指令、與傾斜動.作指令分別 程式化,將農洛洋r丨. ^ 、土役刮器,以實現如裎式所規定之任奇# j '乃问移動、升降動作移動、與颅钭動作係在各 動作各分配|個馬诗 _ 馬達,共利用3個馬達個別地加以驅動。上 程式係用於十八*制 、t 、、上,上巡·,個獨立之移動(動作),以便可對應於 (s丨)’吃:液液面;m 一、 义"及(s2 )基底板板厚之變動而獲得特;〔厚 1234592 度之矽薄板 (a3 )應予廢棄處分之基底板係指重複上述切削加工之結 果,基底板厚度減少,且超過加工界限之基底板1此種基 底板因已無切削加工之餘地,故列為應予廢棄處分被廢 棄處理之基底板利用投入基底板之新品加以補給。 圖4係表示使用於基底板之判別工序之基底板判別裝置 之圖。在圖4中,分離>5夕薄板之基底板2由後面向前面丨則被 順向輸送,被順向送來之基底板首先在表面狀態測定部Μ 及惻面狀態測定部1 2被施行測定。表面狀態測定部11係觀 察基底板之結晶生長面之田埂狀凹凸之高度及孔狀凹部等 ,將其顯示於特定指標,並測定結晶生長面之形狀。倒面 狀態測定部1 2係測定基底板之厚度,讀取形成於側面之識 別標記及使用經歷之打印標記。上述結晶生長面之表面性 質狀態、形狀、厚度、打印標記等係經基底板資訊傳達路 徑1 6被送至基底板管理PC〗4。利用此基底板管理PC I 4掌握 作為對象之基底板之狀態與使用經歷,依據該資訊施行符 合上述判定(al)、(a2)、(a3)中之一種之判定。 此判定之内容經判定傳達路徑丨7被送至分配裝置1 5。分 配裝置1 5將作為對象之基底板分配至對應於其判定之移送 路徑。又,打印標記資訊由基底板管理PC I 4經打印標記資 訊傳達路徑1 8被輸送至打印標記裝置1 3。打印標記裝置1 3 依據該打印標記資訊,在基底板之惻面打印標記 作為打 印標記之形狀,任何形狀均可使用無妨,例如,有每當使 用文字或符號時,使用打印等方法。 Χί)"ι)( 1234592 义,基底板也可具有可識別戽本身之識別標記 識別標 記因士基底板而異。可使用基底板固有之識別標記,也可 將多數片基底板組成I批,而使用批識別標記。基底板具有 識別標記時,可更精確地施行上述基底板之使用經歷之集 中管理,且在使用前施行一次標記打印即可。作為識別標 記之形狀,任何形狀均可使用無妨,例如、有使用打印文 字或符號、連號、條碼等方法。The base plate 2 forming the silicon sheet 1 is closed at the airtightness door 81 of the sub chamber 64, and is transferred to the takeout subchamber 64 through the opened airtight door 83. The ambient gas system of the extraction sub-chamber 64 is controlled to be the same as that of the main chamber 61. After that, the base plate forming the silicon sheet is opened to the outside with the air-tight door 83 in a state where the air-tight door 83 is closed. In order to cool the silicon sheet formed on the surface of the base plate, an accelerated cooling cooling device may be provided in at least one of the main chamber 61, the sub-chamber 64, or the outside, and the base plate with silicon attached to the cooling device is transferred in the main chamber. The immersion mechanism 70 of the base plate soaked in the silicon melt can also use any conveying mechanism. In the thin plate manufacturing apparatus shown in Fig. IB, the support plate 56 is moved along the rail 52 to perform horizontal transfer. In addition, the up-and-down movement is performed by using the I holding rail 52 and the lifting device 53 up and down the ball. S () Vj (1234592 The base fe 2 is connected to the supporting plate 5 6 by the rod 5 8 and the seat 5 is provided. Begging board) 6 walking on the rail 2 and moving. When the lifting device 5 3 stops the horizontal movement on the silicon melt 丨 0 in the crucible 9 and descends, the support plate 56, the rod, the pedestal 51 and the base plate 2 are lowered simultaneously with the rail 52, and the surface portion of the base plate is lowered. Soak in Zhenxuan solution. As a result, silicon is adhered to the surface of the base plate. After that, it is good to know that :) j rises, and the base plate is separated from the liquid storage. At the above-mentioned ascending pass, it becomes a horizontal movement again, and the base plate attached with silicon is removed from the stand at the position away from the crucible. Θ '丨 Each liquid 4 has a temperature of 14 0 〇 ~ 丨 5 0 ° C, and has the function of evaporation of broken pieces. In order to protect the 4 soaking mechanism such as guide rails, a heat-shielding shield plate 5 is arranged on the stacker. 7. Fig. 2A and Fig. 2B are diagrams showing a device of another immersion mechanism different from the above-mentioned immersion mechanism. The base plate 2 is held on a pedestal 5 | and is connected to a drive mechanism 76. The driving mechanism 76 is not only movable along the axis 72. It also has a rotary motion mechanism which can rotate by itself. The silicon melt I immersed in the crucible in the base plate can be lifted down by removing the lifting mechanism 7 3 and the driving mechanism 76 including the shaft 7 2 and the base plate 2 to make the silicon melt adhere to the base plate. To manufacture Shi Xi; · Special board 1. When the sheet 1 is broken into pieces and the liquid sheet 1 is broken, the driving mechanism 7 6 is rotated as shown in FIG. 2B, so that the silicon sheet 丨 is placed on the base plate 2 & In this state, even if the adhesion of the Wan-Si sheet is reduced, the Si can be avoided; the shame sheet is detached from the base sheet 2 and dropped. Although repeated, the mechanism K that rotates the pedestal can be moved by placing a silicon thin plate during transfer, and any mechanism can be used. The last time, the process of burying the base plate and the silicon sheet related to the features of the present invention is described in the 1234592 process. In FIG. 3, the silicon sheet manufactured by the sheet manufacturing apparatus is transferred to the cooling process in the state of an Ar carbon base plate. . The chilled δ sound, "]", and the combined silicon thin plate and the base plate are separated in a thin plate separating device. The base plate separated from the broken sheet is transferred to the base plate for discrimination.] In the process, one of the three types is judged. The so-called three kinds of judgments are: (a) can be directly reused for immersion treatment, (a 2) before use in immersion treatment, + J and must be treated manually, and (a3) three types of disposal should be discarded determination. The height of the rugged bumps on the surface of the carbon-based substrate immersed in, and / or slightly hardened will decrease as the number of immersion tigers increases. When the height of the ridge-like unevenness is reduced, ..,...,…, And the ancient percent become the stone veneer of uniform thickness I 厚度 quality. In addition, as the number of uses increases, a certain bottom surface will form a hole-like recess. This hole-like recess will also be inferior to y; (a2) Judgment that processing is required before use for immersion processing means that cutting must be performed in order to form field-shaped irregularities with a specific degree on the surface of the base plate and remove the hole-like recesses. Using cutting processing to make the base Chen: ~ 形成 = formation of ridge-like bumps, and cutting can reduce the thickness. When reducing the thickness to a specific range, you can use the modified base plate to immerse it in a more molten rail: ’靟 Barrier-free ice making ~~,. At this time, you can usually use a personal computer to move the book in six directions in parallel, ΓΤ 7, the movement instruction of the lifting movement, and the tilting movement. The instructions are respectively programmed to program the Nongluoyang r 丨. ^, The soil scraper, In order to realize the renqi # j 'as prescribed by the 裎 style, the movement, the lifting movement movement, and the cranial movement movement are all assigned to each movement | Ma Shi_ motors, which are individually driven by 3 motors. The upper program is used for the eighteen system, t,, up, up tour, an independent movement (action), so that it can correspond to (s 丨) 'eat: liquid surface; m a, meaning " and ( s2) The change in thickness of the base plate is obtained; [The base plate of silicon thin plate (a3) with a thickness of 1234592 degrees should be discarded refers to the result of repeating the above cutting process, the thickness of the base plate is reduced, and the base plate exceeds the processing limit. 1 Since there is no room for cutting this type of base plate, it is classified as a discardable base plate. The base plate to be discarded should be replenished with new products put into the base plate. Fig. 4 is a diagram showing a base plate discrimination device used in a base plate discrimination process. In FIG. 4, the base plate 2 of the separation > 5th sheet is conveyed forward from the rear to the front, and the base plate sent forward is firstly passed through the surface state measuring unit M and the surface state measuring unit 12. Perform the measurement. The surface state measurement unit 11 observes the height of the ridge-like concavities and convexities on the crystal growth surface of the base plate, displays them on a specific index, and measures the shape of the crystal growth surface. The inverted state measurement unit 12 measures the thickness of the base plate, and reads the identification mark formed on the side surface and the print mark of the history of use. The surface properties, shapes, thicknesses, printed marks, etc. of the crystal growth surface are sent to the base plate management PC via the base plate information transmission path 16. Use this base board management PC I 4 to grasp the status and usage history of the target base board, and execute a decision in accordance with one of the above-mentioned decisions (al), (a2), and (a3) based on the information. The content of this determination is sent to the distribution device 15 via the determination transmission path 丨 7. The distribution device 15 distributes the target substrate to the transfer path corresponding to its determination. The print mark information is transmitted from the base board management PC I 4 to the print mark device 13 through the print mark information transmission path 18. Print mark device 1 3 According to the print mark information, print a mark on the back surface of the base plate as the shape of the print mark. Any shape can be used. For example, whenever a character or a symbol is used, printing is used. Χί) " ι) (1234592 meaning, the base plate can also have an identification mark that can identify itself. The identification mark varies from base plate to base plate. The identification mark inherent to the base plate can be used, and most base plates can be grouped into one batch. Instead, batch identification marks are used. When the base plate has identification marks, the centralized management of the use experience of the above-mentioned base plate can be more accurately performed, and a mark print can be performed before use. As the shape of the identification mark, any shape can Anyway, for example, there are methods such as printing text or symbols, serial numbers, and bar codes.
上逑打印標記之動作以在薄板生長面以外,具體上以在 側面或背面較為理想。但,有些標記形狀也可打印在生長 面上。此情形可將標記轉印在薄板上,僅看薄板即可掌握 所使用之基底板或其經歷。 利用上述打印標記,在發生意外事態而使基底板之原有 性質發生混亂之際,也可重新掌握使用經歷。 利用上逑基底板再使用系統,可一面謀求基底板之再使 用,一面維持高良率製造一定水準以上之品質之矽薄板。It is ideal to print the mark on the top of the sheet outside the growth surface of the sheet, specifically on the side or back. However, some mark shapes can also be printed on the growth surface. In this case, the mark can be transferred to the sheet, and the base sheet used or its experience can be grasped only by looking at the sheet. By using the above-mentioned printed marks, in the event of an unexpected situation that confuses the original properties of the base plate, it is also possible to re-learn the experience of use. Utilizing the base plate reuse system, it is possible to reuse the base plate while maintaining a high yield to produce a silicon thin plate of a certain quality or higher.
其次,說明有關矽薄板。 在圖3中,被薄板分離裝置由基底板分離之矽薄板係被移 送至端部切斷裝置,切斷端部之毛邊。端部之毛邊可作為 碎料而被使用於矽溶液之原料。又,端部被除去之製品部 分之矽薄板係被移送至薄板檢查工序接受檢查,其合格品 投/V於欠陽電池製作工序。又,不合格品可作為碎料而被 使用於矽熔液之原枓。 其次,說明有關矽薄板之端部之切斷工序圖5係表示矽 薄板1形成於基底板2之結晶生長面之狀態之國-矽薄板最 -14- 1234592 上方之良面係附著咬之際與碎·丨容液最後接觸之面,為自由 良面丨a 矽不僅在基底板之I個表面,也可形成於疼同[ΐ]之 惻面測面之部分為端部毛邊。其次,如_ 6所示,利叫真 空吸引裝置3吸取此矽薄板1,使其由基底板2分離,基底板 之結晶生長面2 a與碎薄板呈分離狀態。接著,如圖7所示, 將角碟狀之矽薄板之端部4由切斷部2 9切離時,即可獲得成. 為製品之矽薄板5。 其次,利用圖8 A及圖8 B詳細說明切斷端部之工序。圖8 A 係模式地顯示被載置於端部切斷裝置之吸著台25上之矽薄 板立體圖,圖8B係模式地顯示其剖面圖。端部毛邊係沿著 圖8A之點線被切斷。圖8A、圖8B所示之矽薄板含有端部之 毛邊4,珍薄板係以自由表面1 a為頂邊,被載置於端部切斷 裝置之吸著台25上。圖9係表示未載置矽薄板之狀態之XY 台之圖。如此圖9所示,吸著台與XY台23成為一體。吸著 台之外形高於端部毛邊之高度,小於端部毛邊之内周,且 大於碎薄板之切斷四周。因此,碎薄板被固定於吸著台時 ,端部毛邊不會與X Y台2 3及吸著台相干擾。 在圖8A及圖8B中,端部附有毛邊之矽薄板I係被搭載於 XY台23 :此矽薄板1係被一面操作XY台,一面利用由切斷 單元22出射之雷射光東2丨所切斷。圖1 0係表示端部被切除 後之矽薄板之圖。成為製品之矽薄板5被真空吸引裝置24吸 起而移送至特定之處理工序。又,端部毛透4可被使用作為 矽熔液之原枓。 其次,利用圖Μ說明從丨片基底板分離之丨片矽薄板成形 1234592 為4 K矽薄板之切斷工序。此時,使用與闽S A及闷8 B l·,]疼 · 之端部切斷裝置,一面掃描XY台23,一面利用由切斷笮元 2 2出射之霄射光東2丨,在與端邵毛邊4之切斷相同之工斤中 ,成形為4片沙薄板。成形後,與圖I 0同樣地,4片碎薄板 分別被真空吸引裝置吸起而移送至特定之處理工序。 作為另一實拖形態,也可利用使由切斷單元2 2出射之雷 射光東2 1掃描之方式施行上述之切斷。 · 作為另一實施形態,端部之切斷與成形之切斷也可利用 個別之切斷裝置施行。此時,切斷所需之流水作業時間可 比使用1個切斷裝置更為縮短。 又,矽薄板之切斷手段並非限定於雷射,也可使用切割 器、電漿切斷、電子束切斷、及其他任意之切斷手段。 圖丨2係表示端部被切除之矽薄板之檢查工序之圖。矽薄 板5係假設由圖之左端向右順向被移動。搭載於ΧΥ台32之 矽薄板5被形狀檢查單元3 1檢查其形狀。接著,矽薄板5被 移送至強度試驗單元33,在該處被負載特定彎曲應力,並 被試驗是否達到被破壞之程度。此強度試驗因屬於一種破 壞試驗,因此,最妤從1批矽薄板中僅抽取特定數之矽薄板 加以試驗。又,在正常之5夕薄板之情形,只要屬於施加不 致於造成破壞之程度之彎曲應力之I載之試驗,也可不必 全數加以試驗。此等形狀檢查及強度試驗之結果均經由資 訊傳達路徑36輸送至薄板管理PC35。薄板管理PC35依據上 述之檢查結果判定合格與否後,經合格與否判定傳達路陘 3 7傳達至合格與否分配裝置34。合格與否分配裝置34依據. !S(W( 1234592 上述合格與否判定,將做為對象之矽薄板分配至對應於該 判定之移送路徑。 圖丨3及圖I 4係例示薄板製作裝置。在圖13所示之浸泡機 構中,使具有導孔之支持板56沿著軌52行走。升降軌54、55 係在矽熔液1 〇上,以使台座接近於矽熔液方式,在坩堝上形 成淺U字形之軌道。桿5 8之上端部係被行走自由地被固定於 升降軌5 4、5 5。 將基底板2固定於台座5 1,使其沿著執52、54、55行走, 在接近於财禍時,軌5 4、5 5會採取劃出圓滑的彳瓜形而接近 於矽熔液I 〇之軌道。此時,桿通過開設於支持板56之導孔 而接近於矽熔液側,其結果,可將基底板2之表層部浸泡在 矽熔液。此後,軌5 4、5 5採取上升之執道。此後之動作與 圖1 B之情形相同。 圖14所示之薄板製作裝置係在配置於旋轉軸41之周圍之 基底板連結器42固定基底板2。依照旋轉軸41之旋轉使基底 板連結器移動。利用一面使旋轉軸斷續地旋轉,一面使旋 轉軸4 1接近於矽熔液,在基底板2之表面形成矽薄板。 (實施例) 其次,說明實施例。 實施洌1 在貧施例丨中,施行有關基底板之使用次數之調查 , 以圖I 2所示之方法檢查使用在矽熔液浸泡特定次教之碳製 基底板製成之薄板,並判定合格與否。 在本賞施例中,由基底板卸下薄板,並切斷後,If施形 -17 - 1234592 狀檢奁,以調壶表面起伏、厚!、及厚/ΐ分布 良而起ί尺 ί系以、丨IS Β060 1 - I 994所定義之濾波最大起伏在300 μηι以下 作為合格之基準。厚度、及厚度分布係以板整體厚度在3 5 0 μ m :r 5 ( ) μ m作為合格之基準。义,因薄板生長不良、持落 、破t、缺陷等而無法到達檢查工序之薄板計算作為不合 格。其結果如表丨所示。Next, the silicon sheet will be described. In Fig. 3, a silicon thin plate separated from a base plate by a thin plate separating device is transferred to an end cutting device, and the burrs at the ends are cut. The burrs at the ends can be used as raw materials for the silicon solution as scrap. In addition, the silicon thin plate in which the end portion is removed is transferred to the thin plate inspection process for inspection, and the qualified product is put into the production process of the solar battery. In addition, defective products can be used as raw materials for silicon melts. Next, the cutting process of the end of the silicon sheet will be described. FIG. 5 shows the state where the silicon sheet 1 is formed on the crystalline growth surface of the base plate 2-the silicon sheet at the top -14-12592592 when the good surface is attached to the bite The last contact surface with the broken liquid is a free good surface. A Silicon is not only formed on the I surface of the base plate, but can also be formed on the surface of the test surface that is the same as [ΐ]. Secondly, as shown in FIG. 6, the vacuum suction device 3 sucks the silicon thin plate 1 and separates it from the base plate 2. The crystal growth surface 2a of the base plate is separated from the broken thin plate. Next, as shown in FIG. 7, when the end portion 4 of the corner-shaped silicon thin plate is cut off by the cutting portion 29, a silicon thin plate 5 as a product can be obtained. Next, the process of cutting an end part is demonstrated in detail using FIG. 8A and FIG. 8B. Fig. 8A is a perspective view schematically showing a silicon sheet placed on the suction table 25 of the end cutting device, and Fig. 8B is a sectional view schematically. The end burrs are cut along the dotted line in Fig. 8A. The silicon sheet shown in Figs. 8A and 8B contains the burrs 4 at the ends. The rare sheet is placed on the suction table 25 of the end cutting device with the free surface 1a as the top edge. FIG. 9 is a view of an XY stage showing a state where a silicon thin plate is not placed. As shown in FIG. 9, the suction stage is integrated with the XY stage 23. The shape of the suction table is higher than the height of the end burrs, smaller than the inner circumference of the end burrs, and larger than the surroundings of the broken sheet. Therefore, when the broken sheet is fixed to the suction table, the end burrs will not interfere with the X Y table 23 and the suction table. In FIG. 8A and FIG. 8B, the silicon sheet I with a burr on the end is mounted on the XY stage 23: This silicon sheet 1 is operated by the XY stage while using the laser light east 2 emitted by the cutting unit 22 丨Cut off. Fig. 10 is a view showing a silicon sheet with the end portion cut off. The silicon sheet 5 as a product is sucked up by the vacuum suction device 24 and transferred to a specific processing step. Furthermore, the end hairs 4 can be used as a source of silicon melt. Next, the cutting process of forming a silicon sheet 1234592 which is a 4K silicon sheet separated from a substrate is described with reference to FIG. At this time, using the end cutting device with the SA and boring 8 B l ,,] pain, while scanning the XY stage 23, while using the light emitted from the cutting unit 2 2 to shoot the light east 2 丨, Shao Maobian 4 cuts into the same weight and is formed into 4 sheets of sand. After forming, as in Fig. I0, the four crushed sheets were each sucked up by a vacuum suction device and transferred to a specific processing step. As another actual drag mode, the above-mentioned cutting may be performed by scanning the laser light east 21 emitted from the cutting unit 22. · As another embodiment, the cutting of the end portion and the cutting of the forming portion may be performed by a separate cutting device. In this case, the flow time required for cutting can be shortened compared to using a single cutting device. The cutting method of the silicon sheet is not limited to laser, and a cutter, plasma cutting, electron beam cutting, and other arbitrary cutting methods may be used. Figure 丨 2 is a diagram showing an inspection process of a silicon thin plate whose end is cut off. The silicon sheet 5 is assumed to be moved from the left end of the figure to the right. The shape of the silicon thin plate 5 mounted on the X-axis table 32 is checked by the shape inspection unit 31. Next, the silicon thin plate 5 is transferred to a strength test unit 33, where a specific bending stress is applied, and it is tested whether or not it has been damaged. This strength test is a kind of damage test. Therefore, at most, only a certain number of silicon sheets are extracted from a batch of silicon sheets and tested. In addition, in the case of a normal thin sheet, it is not necessary to perform the test as long as it is a load I test in which bending stress is not caused to the extent that it causes damage. The results of these shape inspections and strength tests are transmitted to the sheet management PC 35 via the information transmission path 36. The sheet management PC 35 determines whether it is a pass or fail based on the above-mentioned inspection results, and then transmits the pass to the pass / fail distribution device 34 via a pass or fail determination. The pass / fail distribution device 34 is based on! S (W (1234592) The pass / fail determination described above allocates the target silicon sheet to the transfer path corresponding to the determination. Figures 3 and I 4 are examples of the thin plate manufacturing device. In the immersion mechanism shown in Fig. 13, the supporting plate 56 with guide holes is allowed to travel along the rail 52. The lifting rails 54, 55 are attached to the silicon melt 10, so that the pedestal is close to the silicon melt, and the crucible is placed in the crucible. A shallow U-shaped rail is formed on the upper side. The upper end of the rod 5 8 is freely fixed to the lifting rails 5 4 and 5 5. The base plate 2 is fixed to the pedestal 5 1 so as to extend along the holder 52, 54 and 55. When walking, when it is close to the financial disaster, the rails 5 4 and 5 5 will take the shape of a smooth gourd shape and approach the silicon melt I 〇. At this time, the rod is approached by the guide hole opened in the support plate 56 On the silicon melt side, as a result, the surface layer portion of the base plate 2 can be immersed in the silicon melt. After that, the rails 5 4 and 5 5 follow the upward direction. The subsequent actions are the same as those in FIG. 1B. Figure 14 The illustrated thin-plate making device fixes the base plate 2 at a base plate connector 42 arranged around the rotation shaft 41. According to The rotation of the rotating shaft 41 causes the base plate connector to move. The rotating shaft is intermittently rotated while the rotating shaft 41 is brought close to the silicon melt to form a silicon thin plate on the surface of the base plate 2. (Example) Next, a description will be given. Implementation Example 1 In the lean example, a survey was conducted on the number of times the substrate was used, and the method shown in Figure I 2 was used to check a thin plate made of a carbon substrate substrate immersed in a silicon melt in a specific secondary education. In this reward example, after removing the thin plate from the base plate and cutting it off, if the shape of -17-1234592 is checked, the surface of the pot is adjusted to undulate, thick !, and the thickness / 厚 distribution is good. The minimum length is defined as the maximum fluctuation of the filter defined by IS Β060 1-I 994 as less than 300 μηι. The thickness and thickness distribution are based on the overall thickness of the plate at 3 50 μm: r 5 ( ) μm is used as the basis for passing. In other words, the sheet that fails to reach the inspection process due to poor growth, holding, breakage, defects, etc. of the sheet is calculated as failing. The results are shown in Table 丨.
表I 1 1基底板使用次數1 j_| 1次 10次 丨50次| 丨 | 100次 | 500 次 丨 1000,4 ; ! 矽薄板之合格率 98% 98% ; 1 98% 98% 9 7% 8 3 °〇 依據表I,基底板即使使用500次,也具有97°。之合格率 ,因此,確認大部分之基底板均可使用500次。 實施例2 在實施例2中,施行有關基底板之切削加工次數與基底板 之厚度變化之調查。表2係表示附隨於切削加工次數之基底 板之厚度、及其薄板檢查結果之經過。薄板之檢查方法與 實拖例1相同。 表2 加工次數 0次 2次 I 1 丨4次1 丨6次 8次 基底板之厚度(rmn) I 20 16 12 1 1 8 4 不修正軌道時之矽薄板之合格率 98% 75% ! 4 5% 0°〇 0°〇 修正軌道時之矽薄板之合格率 98% 98% i 9 7% 9 7°〇 0°〇 依據表2,隨著切削加工次數之增加,基底板之厚度fr減 少其減少比半怙計為每丨次切削加工減少2 m m 反過來〃Γ 以說:每1次切削加工之切削代價為2 m m 依據表2,;、f包 S()VK, -IS - 1234592 基底板時,不修正軌道之情形,切削加工次數2次時’矽薄 板之合格率為7 5 %,良率已相當劣化。又,有修正轨道之 情形,即使施行6次切削加工,確認仍可維持9 7 °'。之合格率 。施行8次切削加工時,由於厚度變得太薄而不能浸泡〃 實施例3 在實施例3中,施行有關矽薄板之端部有無切斷、及切斷 後有無檢查、與製品之良品率之關係之調查。Table I 1 1 The number of times the substrate is used 1 j_ | 1 time 10 times 丨 50 times | 丨 | 100 times | 500 times 丨 1,000,4;! Qualification rate of silicon sheet 98% 98%; 1 98% 98% 9 7% 8 3 ° 〇 According to Table I, the base plate has 97 ° even after being used 500 times. The pass rate, therefore, confirm that most substrates can be used 500 times. Example 2 In Example 2, an investigation was conducted on the number of cutting operations of the base plate and the change in the thickness of the base plate. Table 2 shows the thickness of the base plate accompanying the number of cutting operations, and the progress of the inspection results of the thin plate. The inspection method of the thin plate is the same as that of the first practical example. Table 2 Processing times 0 times 2 times I 1 丨 4 times 1 丨 6 times 8 times Thickness of the base plate (rmn) I 20 16 12 1 1 8 4 Qualification rate of silicon sheet without correction track 98% 75%! 4 5% 0 ° 〇0 ° 〇 Qualification rate of silicon sheet when the track is corrected 98% 98% i 9 7% 9 7 ° 0 °° According to Table 2, as the number of cutting operations increases, the thickness fr of the base plate decreases. The reduction is 2 mm per ½ cutting process. In turn, 〃Γ says that the cutting cost per cutting process is 2 mm. According to Table 2 ,; f package S () VK, -IS-1234592 In the case of the base plate, the track is not corrected. When the number of cutting operations is 2 times, the pass rate of the silicon thin plate is 75%, and the yield rate is considerably deteriorated. In addition, there is a case where the track is corrected, and it is confirmed that it can maintain 97 ° even after 6 cutting operations. Pass rate. When 8 cutting operations are performed, the thickness becomes too thin to be soaked. Example 3 In Example 3, whether the end of the silicon sheet is cut or not, and whether there is inspection after cutting, is related to the product yield. Survey.
切斷後之檢查方法與實施例1相同。 其次,說明太陽電池製作工序之一例。洗淨薄板,適用 組織蝕刻、擴散層形成、氧化膜除去。反射防止膜形成、 背面蝕刻、背面電極形成、受光面電極形成之順序所施行 之一般的方法。此時,將處理過程中之破裂殘缺品及製造 後之性能(變換效率)低於1 2%之薄板列為不合格,其結果如 表3所示。 士 , 矽薄板之合格率 太1%電池製作工序之良品半 ! 整體之良品率 薄板無切斷、無檢查 一 84% 84% 薄板無切斷、有檢查 98% 86% 84% 薄板有切斷、無檢查 — 95% 95% 薄板有切斷、有檢查 98% 97% 95% 切斷矽薄板之端部時,可提高太陽電池製作工序後之製 品良品率。殘存端部時,由於電極印刷時之絲網無法接觸 到與基底板相接之面,故會發生電極印刷不良,導致特性 惡化。义,有無檢查並不改變整體之良品率,但太陽電池 19 1234592 製作工序之良品率卻呈現無檢查之一方之良品率較差二結 果 矽薄板之起伏及厚度分布在合格基準外時,由於苦不 能形成均勻之反射防止膜,即無法均勻地形成電極,故成 為特性不良之原因。因此,在進入太陽電池製作工序之前 ,利用事先檢查,以除去瑕疵品之矽薄板時,即可省掉其 後工序中之浪費。 實施洌4 在本實施例中,施行有關剛浸泡處理後之輸送時之矽薄 板與基底板之上下關係及矽薄板端部切斷時之矽薄板之狀 態之調查。其結果如表4所示。 表4 輸送狀態 切斷狀態 輸送合格率 切斷合格率 整體良品率 輸送時之生長面〜朝上 切斷時之溶液面。)朝上 100% 99% 99° 〇 輸送時之生長面朝下 切斷時之溶液面朝上 25% 99% 25% 輸送時之生長面朝上 切斷時之熔液面朝下 100% 85% 85° 〇 輸送時之生長面朝下 切斷時之熔液面朝下 25% 85% 2丨% )輸送時之生長面:基底板之結晶生長面 y ) ‘丨容液面:碎7薄板之自由表面 依據表4,浸泡後之輸送時,若將薄板朝向下側,則矽薄 板會由基底板脫落。因此,確認將矽薄板配置於基底板之 上例加以輸送時,可防止脫落。又,在XY台上切斷矽薄板 之端面之情形,使矽薄板之熔液面(自由惻)朝上時,可大幅 提高整體良品率。 -2()- 1234592 在上述屮,已就本發明之實施形態予以說明,担上述揭 示之本發明之賞施形態畢竟僅係其例示,本發明之範圍並不 僅限定於此等發明之實施形態。本發明之範圍係由申請專利 範圍所揭示·另外包含與申請專利範圍具有均等意義及範圍 内之所有變更ΰ 使用本發明之薄板製造方法及薄板製造裝置,可提高薄 板之製造效率,降低製造成本。 產業上之可利用性 使用本發明之薄板製造方法及薄板製造裝置,例如可利 用較高效率製造高品質之矽薄板,降低製造成本。因此,可 期待廣泛利用於例如與太陽電池等其他發電方式之價格競 爭較激烈之領域中。 【圖式簡單說明】 圖丨Α及圖1 Β係例示本發明之實施形態之浸泡機構之裝 置之圖,圖1 A係配置圖,圖丨B係浸泡機構之立體圖。 圖2A及圖2B係表示本發明之實施形態之另一浸泡機構 之裝置之圖,圖2A係表示浸泡用之升降動作之圖,圖2B係 表示利用旋轉機構將附著之矽薄板載置於台座之狀態之圖。 圖3係表示本發明之實施形態之薄板製造工序之圖。 圖4係表示圖3之薄板製造工序之基底板判別裝置之圖。 圖5係表示形成於基底板之表面之矽薄板之圖。 圖ί糸由基嚴*板分離$夕薄板4工序之圖。 圖7係切斷矽薄板之端部之狀態之圖。The inspection method after cutting is the same as in Example 1. Next, an example of a solar cell manufacturing process will be described. Clean the sheet, suitable for tissue etching, diffusion layer formation, and oxide film removal. A general method performed in the order of formation of an anti-reflection film, back surface etching, back surface electrode formation, and light receiving surface electrode formation. At this time, the cracked and defective products during the processing and the sheet with the performance (conversion efficiency) lower than 12% after the manufacturing were classified as unacceptable. The results are shown in Table 3. Qualified rate of silicon sheet is too low. 1% of the battery manufacturing process is good! The overall yield of sheet is not cut, no inspection-84% 84% sheet is not cut, inspected 98% 86% 84% sheet is cut No inspection — 95% 95% of the sheet is cut, 98% 97% 95% of the sheet is cut. When the end of the silicon sheet is cut, the product yield after the solar cell manufacturing process can be improved. When the end portion is left, the screen cannot contact the surface that is in contact with the base plate during electrode printing, so electrode printing failure may occur, resulting in deterioration of characteristics. That is, the presence or absence of inspection does not change the overall yield, but the yield of the solar cell 19 1234592 shows that the yield is not inspected. One of the yields is poor. The second result is that the fluctuations and thickness distribution of the silicon sheet are outside the acceptable standard. Forming a uniform anti-reflection film, that is, an electrode cannot be formed uniformly, is a cause of poor characteristics. Therefore, before entering the solar cell manufacturing process, by using a prior inspection to remove defective silicon sheets, waste in subsequent processes can be saved. Implementation Example 4 In this embodiment, an investigation is performed on the relationship between the top and bottom of the silicon sheet and the base sheet immediately after the immersion treatment and the state of the silicon sheet when the end of the silicon sheet is cut. The results are shown in Table 4. Table 4 Conveying state Cutting state Passing rate of passing Passing rate of passing overall yield Rate of growth during transport ~ upward Solution side during cutting. ) Up 100% 99% 99 ° 〇The growth side is downward when transported The solution side is 25% 99% 25% The growth side is upward when transported The melt side is 100% 85% when cut 85 ° 〇The growth surface is downward when transported, the melt surface is 25% when cut, 85% 2 丨%) The growth surface during transport: the crystal growth surface of the substrate y) '丨 Liquid-receiving surface: broken 7 thin plates The free surface is based on Table 4. When conveying after immersion, if the sheet is directed to the lower side, the silicon sheet will fall off from the base sheet. Therefore, make sure that the silicon sheet is placed on the base plate to prevent it from falling off. In addition, when the end face of the silicon sheet is cut on the XY stage, when the molten surface (free ridge) of the silicon sheet is directed upward, the overall yield can be greatly improved. -2 ()-1234592 In the above description, the embodiments of the present invention have been described. After all, the reward forms of the present invention disclosed above are merely examples, and the scope of the present invention is not limited to the embodiments of these inventions. . The scope of the present invention is disclosed by the scope of the patent application. In addition, it includes all changes within the meaning and scope equal to the scope of the patent application. Using the sheet manufacturing method and the sheet manufacturing device of the present invention can improve the manufacturing efficiency of the sheet and reduce the manufacturing cost . Industrial Applicability By using the thin plate manufacturing method and the thin plate manufacturing apparatus of the present invention, for example, a high-quality silicon thin plate can be manufactured with high efficiency, and the manufacturing cost can be reduced. Therefore, it can be expected to be widely used in areas where price competition with other power generation methods such as solar cells is fierce. [Brief description of the drawings] Figures 丨 A and 1B are diagrams illustrating the immersion mechanism of the embodiment of the present invention, Figure 1 is a layout diagram, and Figure 丨 B is a perspective view of the immersion mechanism. FIG. 2A and FIG. 2B are diagrams showing a device of another immersion mechanism according to an embodiment of the present invention, FIG. 2A is a diagram showing a lifting action for immersion, and FIG. 2B is a diagram showing a silicon thin plate attached to a stand by a rotating mechanism Diagram of the state. Fig. 3 is a view showing a manufacturing process of a thin plate according to an embodiment of the present invention. FIG. 4 is a diagram showing a base plate discriminating device of the thin plate manufacturing process of FIG. 3. FIG. Fig. 5 is a view showing a silicon thin plate formed on the surface of a base plate. Figure 4 shows the four steps of separating the sheet by the base plate. Fig. 7 is a view showing a state where the end portion of the silicon thin plate is cut.
圖8 Α及圖8Β係表示切斷矽薄板之端緣之方法之圖,_ 8 A 1234592 ί糸立體_ ,圖8 B係剖面圖。 _ 9係良示未載置矽薄板之狀態之X Y台之_ ' 圖丨0係移送端部被切除之矽薄板之工序之圖。 圖Η係表示由i片矽薄板切成4片矽薄板之方法之圖。 圖丨2係檢查端部被切除之矽薄板之工序之圖。 圖丨3係在本發明之實施形態中,例示浸泡機構之另一裝 置之圖。 圖1 4係在本發明之實施形態中,例示浸泡機構之又另一 裝置之圖。 【圖式代表符號說明】 1 矽薄板 2 基底板 3 真空吸引裝置 4 周緣部 5 矽薄板 I a 自由表面 2a 表面 9 坩堝 ]0 矽熔液 II 表面狀態測定部 12 惻面狀態測定部 ·' I 3 打印標冗裝置8A and 8B are diagrams showing a method for cutting the edge of a silicon sheet, 8A 1234592, and FIG. 8B is a sectional view. _ 9 is a table of X and Y stages showing the state where no silicon thin plate is placed _ 'Figure 丨 0 is a diagram of a process for transferring a silicon thin plate whose end is cut off. Figure IX is a diagram showing a method of cutting from a silicon sheet into four silicon sheets. Figure 丨 2 is a diagram of a process for inspecting a silicon sheet whose ends are cut away. Fig. 3 is a diagram illustrating another device of the immersion mechanism in the embodiment of the present invention. Fig. 14 is a diagram illustrating still another device of the immersion mechanism in the embodiment of the present invention. [Illustration of Symbols] 1 silicon sheet 2 base plate 3 vacuum suction device 4 peripheral edge 5 silicon sheet I a free surface 2a surface 9 crucible] 0 silicon melt II surface state measurement unit 12 surface state measurement unit · I 3 Printing standard equipment
14 基底板管理PC 1234592 15 分配裝置 16 基底板資訊傳達路徑 17 判定傳達路徑 18 打印標記資訊傳達路陘 2 1 雷射光東 2 2 切斷單元 23, 32 XY台 2 4 真空吸引裝置 2 5 吸著台 29 切斷部 3 1 形狀檢查單元 J J 強度試驗單元 34 合格與否分配裝置 3 5 薄板管理PC 3 6 資訊傳達路徑 3 7 傳達路徑 4 1 旋轉軸 42 基底板連結器 5 1 台座 52 軌 5 3 升降裝置 54. 55 升降#九 5 6 支持板14 Base board management PC 1234592 15 Distributor 16 Base board information transmission path 17 Judgment transmission path 18 Printed marker information transmission path 2 1 Laser light east 2 2 Cutting unit 23, 32 XY stage 2 4 Vacuum suction device 2 5 Suction Table 29 Cutting section 3 1 Shape inspection unit JJ strength test unit 34 Pass / fail distribution device 3 5 Sheet management PC 3 6 Information transmission path 3 7 Transmission path 4 1 Rotary shaft 42 Base plate connector 5 1 Stand 52 Rail 5 3 Lifting device 54. 55 Lifting # 九 5 6 Support plate
川 1234592 5 7 遮蔽板 5 8 桿 6 1 主室 6 3.64 副室 70 浸泡機構 72 軸 7 q 升降運動機構 76 驅動機構 8 1,83 氣密性門 X()V)(Sichuan 1234592 5 7 Shield 5 8 Rod 6 1 Main chamber 6 3.64 Auxiliary chamber 70 Immersion mechanism 72 Axis 7 q Lifting motion mechanism 76 Drive mechanism 8 1,83 Airtight door X () V) (
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002191144 | 2002-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200407469A TW200407469A (en) | 2004-05-16 |
TWI234592B true TWI234592B (en) | 2005-06-21 |
Family
ID=29996908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092117645A TWI234592B (en) | 2002-06-28 | 2003-06-27 | Thin sheet manufacturing method, and thin sheet manufacturing apparatus |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4105158B2 (en) |
AU (1) | AU2003244062A1 (en) |
TW (1) | TWI234592B (en) |
WO (1) | WO2004003264A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006012601A1 (en) | 2004-07-22 | 2006-02-02 | Cryovac, Inc. | Additive delivery laminate, process for making and using same, and article employing such |
CN101300584B (en) | 2005-08-06 | 2012-02-29 | 微软公司 | Method for preventing unauthorized modification for software or runtime data |
JP4925752B2 (en) * | 2006-07-10 | 2012-05-09 | シャープ株式会社 | Sheet-like substrate peeling apparatus and sheet-like substrate peeling method |
WO2014001888A1 (en) | 2012-06-27 | 2014-01-03 | Rgs Development B.V. | Film of polycrystalline semiconductor material, method of making same and undercooling molds therefor, and electronic device |
WO2014001886A1 (en) | 2012-06-27 | 2014-01-03 | Rgs Development B.V. | Film of polycrystalline semiconductor material, method of making same and orienting/undercooling molds therefor, and electronic device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4111669B2 (en) * | 1999-11-30 | 2008-07-02 | シャープ株式会社 | Sheet manufacturing method, sheet and solar cell |
JP2002009320A (en) * | 2000-06-23 | 2002-01-11 | Nippei Toyama Corp | Method for manufacturing solar battery |
JP4451556B2 (en) * | 2000-09-08 | 2010-04-14 | シャープ株式会社 | Silicon ribbon manufacturing apparatus and solar cell using the same |
-
2003
- 2003-06-25 AU AU2003244062A patent/AU2003244062A1/en not_active Abandoned
- 2003-06-25 WO PCT/JP2003/008056 patent/WO2004003264A1/en active Application Filing
- 2003-06-25 JP JP2004517275A patent/JP4105158B2/en not_active Expired - Fee Related
- 2003-06-27 TW TW092117645A patent/TWI234592B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU2003244062A1 (en) | 2004-01-19 |
TW200407469A (en) | 2004-05-16 |
JP4105158B2 (en) | 2008-06-25 |
JPWO2004003264A1 (en) | 2005-10-27 |
WO2004003264A1 (en) | 2004-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113061843B (en) | Metal plate for manufacturing vapor deposition mask and manufacturing method thereof, and vapor deposition mask device provided with same | |
JP3867230B2 (en) | Mechanical scribing device | |
EP3377455B1 (en) | Glass articles and methods for bonding glass sheets with carriers | |
JP5864988B2 (en) | Tempered glass sheet cutting method | |
JP2013216513A (en) | Method for cutting glass film and glass film lamination body | |
KR20180014700A (en) | METHOD FOR MANUFACTURING COMPOSITE WAFER WITH OXIDE SINGLE CRYSTAL FILM | |
WO2016187186A1 (en) | Articles and methods for bonding sheets with carriers | |
KR20170103855A (en) | Glass-carrier assembly and method for processing flexible glass sheet | |
TWI234592B (en) | Thin sheet manufacturing method, and thin sheet manufacturing apparatus | |
TW201421584A (en) | Method for producing hybrid substrates, and hybrid substrate | |
TW201026619A (en) | Method of cutting mother glass substrate for display panel and substrate of brittle material, and method of manufacturing display | |
WO2024125264A1 (en) | Composite substrate preparation method | |
TW201101525A (en) | Method for manufacturing integrated thin-film solar cell | |
JPWO2020136624A5 (en) | ||
JP4275121B2 (en) | Manufacturing method of glass substrate for solar cell | |
JP4212555B2 (en) | Thin plate manufacturing method, thin plate manufacturing apparatus, and base plate | |
CN110301035A (en) | Remove manufacture of substrates | |
CN103367535B (en) | Groove machining tool, method and the grooving apparatus of thin film solar cell | |
TW200527522A (en) | Method of producing semiconductor single crystal wafer and laser processing device for thereof | |
JP4925752B2 (en) | Sheet-like substrate peeling apparatus and sheet-like substrate peeling method | |
TW202220837A (en) | Electronic device manufacturing method and glass plate group | |
CN114038780A (en) | Method for manufacturing flexible display device and peeling equipment | |
JP2021015987A (en) | Method for manufacturing peeling substrate | |
JPWO2018008358A1 (en) | Disc-like glass and method for producing the same | |
CN109786392A (en) | Show equipment and its manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |