JP4925752B2 - Sheet-like substrate peeling apparatus and sheet-like substrate peeling method - Google Patents

Description

  The present invention relates to a sheet-like substrate peeling apparatus and a sheet-like substrate peeling method, and more particularly to a sheet-like substrate peeling device and a sheet-like substrate peeling method used for manufacturing a solar cell.

  Conventionally, solar cells have been manufactured using single crystal silicon wafers. However, since a single crystal silicon wafer is manufactured by manufacturing a silicon ingot over a long period of time, the cost becomes very high, and naturally, a solar cell manufactured from such a single crystal wafer is also very high. It was expensive.

  In recent years, polycrystalline silicon has come to be used mainly as a wafer in order to further reduce the cost of solar cells. Such polycrystalline silicon is manufactured by a so-called casting method. For example, as proposed in Patent Document 1, the casting method is performed by first cooling the silicon melted in the crucible from the bottom of the crucible while cooling it to solidify the silicon from the bottom of the crucible. In this method, an ingot mainly composed of grown long crystal grains is produced and a wafer usable for a solar cell is obtained by slicing the ingot to a predetermined thickness.

  However, the casting method has a problem that a relatively large amount of silicon is wasted for slicing. And the time and cost for performing such a slice have been a problem. Therefore, recently, in order to solve such problems, various methods for directly manufacturing a sheet-like polycrystalline silicon plate from melted silicon have been proposed.

  One method for producing a sheet-like silicon substrate from molten silicon is to obtain a sheet-like silicon substrate by bringing a substrate (growth substrate) maintained at a temperature below the melting point of silicon into contact with a silicon melt. is there. For example, Patent Document 2 proposes a method of manufacturing a sheet-like silicon substrate by growing silicon on a growth substrate having at least one of dot-like, linear, and convex portions on a surface. In this method, by using such a growth substrate, a dendrite growth is suppressed by growing a silicon crystal using a convex portion as a starting point for crystal growth, and connecting each crystal grown from the convex portion, resulting in excellent smoothness. It is said that a sheet-like silicon substrate can be manufactured.

Further, in Patent Document 3, a sheet-like structure is used by using a growth substrate that includes a first surface that is immersed in molten silicon and crystal growth is performed, and a second surface that has a predetermined positional relationship with the first surface. A technique for manufacturing a silicon substrate has been proposed. In particular, this growth substrate has a structure in which a sheet-like silicon substrate that grows on the first surface and the second surface respectively grips the growth substrate by the first surface and the second surface according to a predetermined arrangement relationship. Therefore, it can be said that the growth of the grown sheet-like silicon substrate from the growth substrate can be reduced.
Japanese Patent Laid-Open No. 11-021120 JP 2001-223172 A International Publication No. 2004/016836 Pamphlet

  However, the conventional sheet-like substrate manufacturing method described above has the following problems. When the sheet-like silicon substrate grown on the surface of the growth substrate is processed into a product such as a solar cell, it is necessary to peel the sheet-like silicon substrate from the growth substrate. In particular, in order to produce products such as solar cells made of a sheet-like silicon substrate at low cost and in large quantities, a peeling apparatus capable of automatically peeling the sheet-like silicon substrate from the growth substrate is desired.

  However, in the method of growing the sheet-like silicon substrate on the growth substrate so as to hold the growth substrate, the sheet-like silicon substrate is relatively firmly attached to the growth substrate. It was difficult to peel off. Further, since the sheet-like silicon substrate is fragile, it is necessary to pay close attention even if it is manually peeled off, and it is extremely difficult to automatically peel off the sheet-like silicon substrate.

  The present invention has been made to solve the above problems, and one object is to provide a sheet-like substrate peeling apparatus that automatically peels a sheet-like substrate grown on a growth substrate from the growth substrate. Another object is to provide a sheet-like substrate peeling method for peeling such a sheet-like substrate from a growth substrate.

The sheet-like substrate peeling apparatus according to the present invention is a substance grown on the surface of a growth substrate by bringing the growth substrate into contact with a melt of a predetermined substance containing at least one of a metal material and a semiconductor material. This is a sheet-like substrate peeling apparatus for peeling a sheet-like substrate made of the above from a growth substrate. The sheet-like substrate peeling apparatus has a suction part, a moving part, and another suction part . The adsorption unit adsorbs a predetermined portion of the sheet-like substrate grown on the growth substrate. The moving unit peels the sheet-like substrate from the growth substrate by moving at least one of the adsorption unit and the growth substrate unit in a state where the sheet-like substrate is adsorbed by the adsorption unit. The other adsorbing unit serves as a carry-out unit for carrying out the peeled sheet-like substrate, lifting the sheet-like substrate upward from the growth substrate, and carrying the sheet-like substrate out of the growth substrate. The growth substrate includes a main surface that extends in a plane and substantially grows the sheet substrate, and a portion of the sheet substrate that is provided on one end side of the main surface and grows on the main surface. And a predetermined end surface for growing a portion of the sheet-like substrate in a manner of grasping the portion on one end side. The adsorbing portion has a first length from the end on one end side of the growth substrate to the first length from the end on one end side of the growth substrate to the end on the other end opposite to the side where the end face is located. It has a function of adsorbing a portion of the sheet-like substrate grown on a portion located at a second length that is one third or less of one length. The moving unit has a function of moving the portion of the sheet-like substrate that has grown on the end surface in parallel with the main surface in a manner of separating from the end surface while the sheet-like substrate is adsorbed by the adsorbing unit.

According to this configuration, with respect to the sheet-like substrate grown so as to grasp one end side of the growth substrate, the end portion on one end side of the growth substrate reaches the end portion on the other end side opposite to the side where the end face is located. The portion of the sheet-like substrate that has grown is adsorbed to a portion located at a second length that is equal to or less than one-third of the first length from the end on one end side of the growth substrate with respect to the first length. In this state, the sheet-like substrate is subjected to compressive stress or shear stress by moving at least one of the adsorbing portion and the growth substrate portion in parallel with the main surface in such a manner that the portion of the sheet-like substrate grown on the end surface is separated from the end surface. results of the by peeling from the growth substrate without damaging the sheet substrate is suppressed by the other suction portion can Rukoto is carried out a sheet substrate from the growth substrate. The term “parallel” as used in this specification does not intend to be mathematically parallel, but naturally includes a device manufacturing error, clearance, play of mechanical operation, and the like. Further, the one end side and the other end side in this specification include the respective end portions and the area in the vicinity thereof.

  More specifically, in order to peel the sheet-like substrate from the growth substrate without damaging the sheet-like substrate, the moving unit moves the sheet-like substrate in such a manner that the sheet-like substrate releases the gripping portion on one end side of the growth substrate. It is preferable to have a function of

  In order to grow a sheet-like substrate so as to grasp one end side of the growth substrate, a predetermined end surface of the growth substrate is a method in which the first end surface connected to the main surface and the normal vector of the main surface are antiparallel or obtuse. It is preferable to include a second end surface having a line vector and connected to the first end surface. It should be noted that the antiparallel and obtuse angles in this specification are not intended to be mathematically strict, but naturally include manufacturing errors.

Further, the peeled as compressive stress or shear stress to the sheet-like substrate does not occur, the adsorption unit has a function of adsorbing portion of the sheet-like substrate grown on the end face of the sheet over preparative shaped substrate It is preferable.

In the sheet-like substrate peeling method according to the present invention, a growth substrate is brought into contact with a melt of a predetermined substance containing at least one of a metal material and a semiconductor material, and is grown on the surface of the growth substrate. This is a sheet-like substrate peeling method for peeling a sheet-like substrate made of the above from a growth substrate. The sheet-like substrate peeling method includes, as a growth substrate, a main surface that extends in a plane and substantially grows the sheet-like substrate, and a sheet shape that is provided on one end side of the main surface and grows on the main surface. A growth substrate having a predetermined end face for growing a portion of the sheet-like substrate in a manner of grasping a portion on one end side of the growth substrate with the portion of the substrate is provided, and includes an adsorption step, a peeling step, and an unloading step . In the adsorption step, a predetermined portion of the sheet-like substrate made of the substance grown on the surface of the growth substrate is adsorbed by bringing the growth substrate into contact with the melt of the substance. In the peeling step, the sheet-like substrate and the growth substrate are moved in parallel with the main surface in such a manner that the portion of the sheet-like substrate that has grown on the end surface while the sheet-like substrate is adsorbed is separated from the end surface. The substrate is peeled from the growth substrate. In the carry-out step, the sheet-like substrate peeled from the growth substrate is lifted upward from the growth substrate, and the peeled sheet-like substrate is carried out. The adsorption step, as a predetermined part, to the side where the end face from the end portion of one end side of the growth substrate is positioned relative to the first length extending in the opposite end of the other end, one end of the growth substrate The portion of the sheet-like substrate grown on the portion located at the second length that is not more than one third of the first length from the end on the side is adsorbed.

According to this method, with respect to the sheet-like substrate grown so as to grasp one end side of the growth substrate, in the adsorption step, the other end side opposite to the side where the end face is located from the end portion on one end side of the growth substrate. The sheet-like substrate grown on a portion located at a second length that is equal to or less than one-third of the first length from the end portion on one end side of the growth substrate with respect to the first length reaching the end portion. In the state in which the portion is adsorbed and in the peeling step, at least one of the sheet-like substrate and the growth substrate is moved in parallel with the main surface in such a manner that the portion of the sheet-like substrate grown on the end surface is separated from the end surface. , suppressing the compressive stress or shear stress to the sheet-like substrate from occurring by peeling from the growth substrate without damaging the sheet shape substrate, it is Rukoto is carried out a sheet substrate from the growth substrate.

  In order to apply to a solar cell as a sheet-like substrate, it is preferable to apply silicon as a material and peel the sheet-like silicon substrate as the sheet-like substrate.

  As a sheet-like substrate peeling apparatus according to an embodiment of the present invention, a sheet-like substrate for dipping a molten silicon (silicon melt) in a growth substrate and peeling the sheet-like silicon substrate grown on the growth substrate from the growth substrate The substrate peeling apparatus will be described below. Note that silicon is an example of an object to be grown on the growth substrate, and is not limited to silicon.

Embodiment 1
(Structure of sheet-like substrate peeling device)
A sheet-like substrate peeling apparatus according to Embodiment 1 of the present invention will be described. As shown in FIG. 1, a sheet-like substrate peeling apparatus 1 includes a growth substrate 3 for growing a silicon sheet-like substrate (sheet-like silicon substrate) by being immersed in molten silicon, and a sheet grown on the growth substrate 3. A vacuum suction pad 11 for peeling the strip-like substrate, a Bernoulli suction pad 13 for transporting the peeled sheet-like substrate, a vertical moving rod 15 for moving the vacuum suction pad 11 or Bernoulli suction pad 13 and a horizontal The movable rod 17 and a fixing base 9 for fixing the growth substrate 3 are provided.

  As shown in FIGS. 1 and 2, the growth substrate 3 includes a first growth surface (main surface) 3a, a second growth surface (first end surface) 3b, and a third growth surface (for growing a sheet-like silicon substrate, respectively). A second end surface 3c is provided. The first growth surface 3a is a surface that extends in a planar shape to substantially grow a sheet-like silicon substrate, and is a surface on which a sheet-like silicon substrate used as a product such as a solar cell is formed. The second growth surface 3 b and the third growth surface 3 c are provided on one end side of the growth substrate 3.

  The normal vector 30 of the first growth surface 3a and the normal vector 31 of the second growth surface 3b are substantially perpendicular. The normal vector 30 of the first growth surface 3a and the normal vector 32 of the third growth surface 3c are substantially antiparallel. The sheet-like silicon substrate grows so as to grasp a portion on one end side of the growth substrate 3 from the first growth surface 3a to the third growth surface 3c. Note that normal vectors 30 to 32 of the first growth surface 3 a to the third growth surface 3 c in the growth substrate 3 are defined as directions extending outward from the surface of the growth substrate 3.

  Further, as described above, in order to obtain a sheet-like silicon substrate excellent in smoothness by suppressing dendrite growth, a convex portion may be provided on the first growth surface 3 a of the growth substrate 3. When such a convex portion is provided and the first growth surface 3a has an uneven surface, the normal vector on the first growth surface 3a is locally directed in various directions. Therefore, the normal vector is defined with respect to the envelope surface including the convex portion.

  A trench 5 is provided on the first growth surface 3 a of the growth substrate 3 along the outer periphery. The moat 5 is for separating the sheet-like silicon substrate grown on the first growth surface 3a and the silicon burrs grown on the outer peripheral portion of the growth substrate 3. The vacuum suction pad 11 is disposed above the growth substrate 3 so as to vacuum-suck a portion of the sheet-like silicon substrate grown on the growth substrate 3 that has grown on the first growth surface 3a. The vacuum suction pad 11 is attached to a predetermined horizontal movement rod 17 and vertical movement rod 15 so as to be movable in the horizontal direction and in the vertical direction. Further, the vacuum suction pad 11 is connected to a vacuum line, and the on / off of the vacuum is controlled by the control unit 19. In FIG. 1, for simplicity, a vacuum pump or vacuum ejector, a pressure gauge, an air filter, and the like are not shown.

  The Bernoulli suction pad 13 is for transporting the peeled sheet-shaped silicon substrate 60 to a predetermined position, and the position for sucking so as to suck the vicinity of the center of the sheet-shaped silicon substrate 60 that is gravitationalally stable. It has been adjusted. The fixing base 9 is a jig for fixing the growth substrate 3 so as not to move during the operation of peeling the sheet-like silicon substrate 60. In this sheet-like substrate peeling apparatus 1, the growth substrate 3 is fixed to the fixing base 9 by fitting the dovetail groove 7 provided on the growth substrate 3 to the fixing base 9.

  Next, the peeling operation of the sheet-like silicon substrate by the above-described sheet-like substrate peeling apparatus 1 will be described. Before that, the structure of the growth substrate on which the sheet-like silicon substrate is grown, and the sheet-like silicon using the growth substrate. A substrate manufacturing apparatus and a sheet-like silicon substrate manufacturing method will be specifically described.

(Structure of growth substrate in sheet-like substrate peeling device)
The shape (structure) of the growth substrate 3 will be described with reference to FIGS. As shown in FIGS. 3 to 6, the growth substrate 3 includes a first growth surface (main surface) 3 a on which a sheet-like silicon substrate is substantially grown, and a second growth surface continuous with the first growth surface 3 a. A (first end face) 3b and a third growth face (second end face) 3c are formed. The second growth surface 3 b and the third growth surface 3 c are formed on one end side of the growth substrate 3. The second growth surface 3b and the third growth surface 3c include surfaces in which the respective normal vectors 31 and 32 form an antiparallel, acute angle, or obtuse angle with the normal vector 30 of the first growth surface 3a. .

  That is, in the growth substrate 3 shown in FIG. 3, as shown in FIG. 4, the normal vector 30 of the first growth surface 3a and the normal vector 32 of the third growth surface 3c are in an antiparallel relationship. . The normal vector 30 of the first growth surface 3a and the normal vector 31 of the second growth surface 3b are substantially perpendicular to each other. In the growth substrate 3 shown in FIG. 5, as shown in FIG. 6, the normal vector 30 of the first growth surface 3a and the normal vector 32 of the third growth surface 3c form an obtuse angle. The normal vector 30 of the first growth surface 3a and the normal vector 31 of the second growth surface 3b are in an acute angle relationship.

  Since the growth substrate 3 has the first growth surface 3 a to the third growth surface 3 c as described above, the sheet-like silicon substrate grown on the growth substrate 3 grasps a portion on one end side of the growth substrate 3. This structure is called a gripping structure.

  Thus, in the sheet-like silicon substrate 60 grown on the growth substrate 3 shown in FIG. 4, the first surface 60 a and the second surface 60 b so as to substantially correspond to the first growth surface 3 a to the third growth surface 3 c of the growth substrate 3. And the 3rd surface 60c is formed. The normal vector 35 of the first surface 60a and the normal vector 37 of the third surface 60c are antiparallel, and the normal vector 35 of the first surface 60a and the normal vector 36 of the second surface 60b are substantially perpendicular to each other. . A boundary portion (ridge portion) is located between the first surface 60a and the second surface 60b.

  Further, in the sheet-like silicon substrate 60 grown on the growth substrate 3 shown in FIG. 6, the first surface 60a and the second surface 60b are substantially matched with the first growth surface 3a to the third growth surface 3c of the growth substrate 3. And the 3rd surface 60c is formed. The normal vector 35 of the first surface 60a and the normal vector 37 of the third surface 60c form an obtuse angle, and the normal vector 35 of the first surface 60a and the normal vector 36 of the second surface 60b have an acute angle relationship. A boundary portion (ridge portion) is located between the first surface 60a and the second surface 60b.

  Note that the normal vectors 30 to 32 of the growth substrate 3 are defined as directions from the surface of the growth substrate 3 toward the outside of the growth substrate 3 as described above. The normal vectors 35 to 37 of the sheet-like silicon substrate 60 are defined as directions in which the sheet-like silicon substrate 60 grows, that is, directions away from the surface of the growth substrate 3.

  By using such a growth substrate 3, the sheet-like silicon substrate 60 grows so as to grasp a portion on one end side of the growth substrate 3, and the sheet-like silicon substrate 60 is prevented from peeling off from the growth substrate 3, The recovery rate of the sheet-like silicon substrate 60 can be improved.

  When the sheet-like silicon substrate 60 grown on the growth substrate 3 is peeled off, the first growth surface 3a to the third growth face 3 of the growth substrate 3 in contact with the first surface 60a to the third surface 60c of the sheet-like silicon substrate 60 to be peeled off. It is desirable to draw the growth surface 3c in a direction that does not correspond to any of the directions antiparallel to the normal vectors 30 to 32 and the obtuse angle with the normal vectors 30 to 32. In particular, in the growth substrate 3 described above, it is preferable that a portion of the first surface 60a of the sheet-like silicon substrate 60 grown on the first growth surface 3a used as a solar cell is drawn out in parallel with the first growth surface 3a.

  In addition, in the sheet-like silicon substrate 60, when a portion that grows on the first growth surface 3a of the growth substrate 3 and a portion that grows on the side surface of the growth substrate 3 (burrs) are connected, such a drawing direction is specified. It can be difficult to do. Therefore, as described above, as shown in FIG. 1, the growth substrate 3 is provided with the moat 5 along the periphery of the first growth surface 3a to separate the burrs from the portion that grows on the first growth surface 3a. The pull-out direction can be specified relatively easily.

(Sheet-like silicon substrate manufacturing equipment)
Next, an example of a sheet-like silicon substrate manufacturing apparatus for growing a sheet-like silicon substrate on a growth substrate will be described. As shown in FIG. 7, in the sheet-like silicon substrate manufacturing apparatus, a crucible 51 is placed on a crucible lifting table 56 with a heat insulating material 55 and a crucible table 54 interposed therebetween. A heating heater 53 is disposed around the crucible 51. In the crucible 51, the silicon melt 52 melted by the heater 53 is stored and held at a predetermined temperature equal to or higher than the melting point. The heat insulating material 55 has a function of keeping the temperature of the silicon melt 52 uniform and suppressing heat from escaping from the bottom of the crucible 51.

  Above the crucible 51, the growth substrate 3 fixed to the fixed leg 57 is disposed. The growth substrate 3 is immersed in the silicon melt 52 while being transported in the direction indicated by the arrow by a driving device (not shown), and then pulled up from the silicon melt 52. While the growth substrate 3 is immersed in the silicon melt 52 and pulled up, silicon grows on the surface of the growth substrate 3. In order to grow silicon of the same thickness on the surface of the growth substrate 3, the crucible lifting / lowering base 56 has a function of moving the crucible base 54 up and down so that the growth substrate 3 is immersed from the melt surface of the silicon melt 52 to a certain depth. have.

  In order to stably grow the sheet-like silicon substrate 60 on the growth substrate 3, it is desired to precisely control the temperature of the silicon melt 52. For example, the temperature of the silicon melt 52 can be more precisely controlled by using a plurality of thermocouples or a radiation thermometer.

  In particular, in the case of a thermocouple, it is an effective technique to immerse the thermocouple directly in the silicon melt 52 in order to measure the temperature more accurately. However, in this case, since impurities contained in a thermocouple protective tube or the like may be mixed into the silicon melt 52, depending on the use of the sheet-like silicon substrate 60 in which the contamination of the impurities is a problem, It is required to adopt a structure that prevents contamination by thermocouples.

  As a temperature control method, for example, there is a method of indirectly controlling the temperature of the silicon melt 52 by, for example, providing an appropriate hole in the wall of the crucible 51 and inserting a thermocouple into the hole. Moreover, it is good also as a structure which measures the temperature of the silicon melt 52 using a radiation thermometer.

(Method for manufacturing a sheet-like silicon substrate)
Next, an example of a method for producing a sheet-like silicon substrate will be described based on the sheet-like silicon substrate production apparatus shown in FIG. First, a silicon lump whose boron (B) concentration is adjusted so that the specific resistance of the sheet-like silicon substrate becomes a desired value is placed in the crucible 51, and the crucible 51 is placed on the crucible base 54 in the chamber 58. Put.

Next, the inside of the chamber 58 is evacuated to reduce the inside of the chamber 58 to a predetermined pressure. Thereafter, argon gas is kept flowing in the chamber 58 at a flow rate of 10 × 10 ⁻³ m ³ / min, for example. The reason why the argon gas is continuously flowed is to obtain a clean silicon melt surface. Next, the set temperature of the heater 53 is raised stepwise and finally set to 1500 ° C., and the silicon lump in the crucible 51 is completely melted to obtain a silicon melt 52.

  Thereafter, the temperature of the heater 53 is set so that the temperature of the silicon melt 52 becomes, for example, 1410 ° C., and this state is maintained for about 30 minutes to stabilize the temperature of the silicon melt 52. Then, the crucible lifting mechanism 56 moves the crucible 51 to a predetermined position (height).

  Next, a sheet-like silicon substrate is grown on the growth substrate 3. With respect to the fixed leg 57 disposed above the crucible 51, for example, the first growth surface 3a faces downward so that the first growth surface 3a of the growth substrate 3 shown in FIG. The growth substrate 3 is fixed in advance. The growth substrate 3 fixed to the fixed leg 57 is immersed in the silicon melt 52 while being transported in the direction indicated by the arrow by a driving device (not shown), and then pulled up from the silicon melt 52. While the growth substrate 3 is immersed in the silicon melt 52 and pulled up, silicon grows on the surface of the growth substrate 3.

(Peeling operation of sheet-like substrate peeling device)
Next, a peeling operation for peeling the sheet-like silicon substrate 60 grown on the growth substrate 3 as described above from the growth substrate 3 by the sheet-like substrate peeling apparatus 1 according to the present embodiment will be described in detail.

  First, as shown in FIGS. 8 and 9, the growth substrate 3 on which the sheet-like silicon substrate 60 is grown is fixed to the fixing base 9. Next, the vertical movement rod 15 is moved down, and the vacuum suction pad is aimed at the portion of the sheet-like silicon substrate 60 grown on the portion of the first growth surface 3a of the growth substrate 3 where the second growth surface 3b is located. Take 11 down. Next, evacuation is performed to adsorb the portion of the sheet-like silicon substrate 60 to the vacuum suction pad 11.

  Next, as shown in FIG. 10, the horizontal movement rod 17 is parallel to the first growth surface 3 a of the growth substrate 3 (on the left side of the drawing) while the sheet-like silicon substrate 60 is adsorbed to the vacuum suction pad 11. By moving, the sheet-like silicon substrate 60 is peeled off from the growth substrate 3 as shown in FIGS.

  In this case, since the portion of the sheet-like silicon substrate 60 grown on one end side of the first growth surface 3a is in close contact with the first growth surface 3a, the normal vector 35 of the sheet-like silicon substrate 60 is the first growth surface 3a. The direction in which the vacuum suction pad 11 is moved in the same direction as the normal vector 30 (see FIG. 2) of the surface 3a is a direction substantially orthogonal to the normal vector 35 or the normal vector 30. This direction is also a direction in which the portion of the sheet-like silicon substrate 60 grown on the second growth surface 3b and the third growth surface 3c is separated from the second growth surface 3b and the third growth surface 3c.

  The distance by which the horizontal movement rod 17 is moved is a distance that allows the sheet-like silicon substrate 60 to be peeled from the growth substrate 3 and that the peeled sheet-like silicon substrate 60 is transported. preferable. In this case, it is desirable that the distance moved is longer than the width W of the third growth surface 3c of the growth substrate 3. In this way, the state in which the sheet-like substrate 60 has grasped the portion on one end side of the growth substrate 60 is released. In the sheet-like substrate peeling apparatus 1, such an operation is performed that releases the sheet-like substrate 60 that has grasped the portion on one end side of the growth substrate 3.

  Next, the evacuation is stopped, the vacuum suction pad 11 is separated from the sheet-like silicon substrate 60, and the vacuum suction pad 11 is retracted to a position where there is no hindrance to transport the sheet-like silicon substrate 60. Next, the Bernoulli suction pad 13 is lowered near the center of the sheet-like silicon substrate 60 that is peeled and placed on the first growth surface 3a of the growth substrate 3, and the sheet-like silicon substrate 60 is sucked. Then, as shown in FIG. 13, the Bernoulli suction pad 13 that has sucked the sheet-like silicon substrate 60 is moved to transport the sheet-like silicon substrate 60 to a predetermined position. Thus, a series of peeling operations for peeling the sheet-like silicon substrate 60 from the growth substrate 3 is completed.

  According to the peeling operation by the sheet-like substrate peeling apparatus 1 described above, the portion of the sheet-like silicon substrate 60 grown on one end side portion of the first growth surface 3a of the growth substrate 3 is adsorbed, and in the adsorbed state, the sheet-like substrate is peeled off. The silicon substrate 60 is moved parallel to the first growth surface 3a. Thereby, the sheet-like silicon substrate 60 can be peeled from the growth substrate 3 with a high yield without damaging it.

  In particular, in order to adsorb the sheet-like silicon substrate 60 without damaging it, as shown in FIG. 9, the second growth surface 3b is opposed from the end on one end side where the second growth surface 3b of the growth substrate 3 is located. It is desirable to adsorb the portion of the sheet-like silicon substrate 60 that grows at a distance S that is not more than one-third of the length (L) to the end on the other end side, so that the sheet-like silicon substrate 60 has a higher yield. In order to peel off, the distance S is more preferably 1/5 or less. That is, the portion of the sheet-like silicon substrate 60 that grows closer to the boundary portion (the ridge portion) between the first growth surface 3a and the second growth surface 3b is moved in parallel to the first growth surface 3a while adsorbing the portion. Thus, the sheet-like silicon substrate 60 can be peeled off from the growth substrate 3 without damaging it. This is considered to be due to the following reason.

  As shown in FIG. 9 or FIG. 10, the growth substrate 3 has the first growth surface 3a, the second growth surface 3b, and the third growth surface 3c having a predetermined arrangement relationship. As shown in FIG. 2, the sheet-like silicon substrate 60 grows so as to grasp a portion on one end side of the growth substrate 3 and adheres relatively firmly to the growth substrate 3. Therefore, when the first growth surface 3a of the sheet-like silicon substrate 60 is moved (slid) in parallel to the first growth surface 3a while being vacuum-sucked, a portion where the sheet-like silicon substrate 60 grips the growth substrate 3 (inside the dotted frame 40) ) And the vacuum adsorbing position become power points, respectively, and compressive stress acts between these two power points.

  At this time, the distance S from the boundary portion between the first growth surface 3a and the second growth surface 3b (distance from the end portion on one end side of the growth substrate 3) S is a distance exceeding one third of the distance L. In this case, when the portion of the sheet-like silicon substrate 60 that grows is attracted and slid, the distance between the two power points is relatively long, so that the sheet-like silicon substrate 60 is easily warped. It will end up. If the sheet-like silicon substrate 60 is further slid in a warped state, not only the compressive stress but also the shear stress is applied to the sheet-like silicon substrate 60, and the possibility that the sheet-like silicon substrate 60 is destroyed is increased.

  On the other hand, when the portion S of the sheet-like silicon substrate 60 that grows at a distance S from the end on one end side of the growth substrate 3 is equal to or less than one third of the distance L is sucked and slid. Since the distance between the two force points is relatively short, the warp due to the compressive stress is reduced in the sheet-like silicon substrate 60, and the shear stress is also reduced. As a result, it is considered that the sheet-like silicon substrate 60 can be peeled off from the growth substrate 3 without breaking.

  Moreover, the sheet-like silicon substrate peeling method by the sheet-like substrate peeling apparatus 1 described above can be applied even when the sheet-like silicon substrate 60 is warped at the time of growth. In the growth substrate 3 described above, the sheet-like silicon substrate 60 grows so as to grasp a portion on one end side of the growth substrate 3, so that the sheet-like silicon substrate 60 is in close contact with the growth substrate 3 at a portion on one end side of the growth substrate 3. . Accordingly, the case where the sheet-like silicon substrate 60 is warped at the time of growth means that the sheet-like silicon substrate 60 grows on the other end side of the growth substrate 3 opposite to the side where the second growth surface 3b is located. This is the case where the portion is separated from the surface of the growth substrate 3 or is floating.

  In this case, if a portion of the sheet-like silicon substrate 60 that grows relatively far from the end portion on one end side of the growth substrate 3 is vacuum-adsorbed, the sheet-like silicon substrate 60 that floats from the surface of the growth substrate 3 is removed. The part will be pressed from above. Then, a force acts to pull away the portion of the sheet-like silicon substrate 60 that has grown on one end side of the first growth surface 3a of the growth substrate 3 and is in close contact with the first growth surface 3a from the growth substrate 3. As a result, there is a strong possibility that the sheet-like silicon substrate 60 will be cracked.

  On the other hand, when the portion of the sheet-like silicon substrate 60 that grows closer to the one end side portion of the first growth surface 3a of the growth substrate 3 is vacuum-sucked, the sheet-like silicon substrate 60 that is vacuum-sucked Since the portion is in close contact with the growth substrate 3, the pressing force from above is received by the growth substrate 3 and does not act much on the sheet-like silicon substrate 60. As a result, an unreasonable force does not act on the sheet-like silicon substrate 60, and the possibility that the sheet-like silicon substrate 60 is cracked is reduced.

  After the sheet-like silicon substrate 60 is vacuum-sucked by the vacuum suction pad 11, the direction in which the sheet-like silicon substrate 60 is moved is any one of the three normal vectors 30 to 32 of the growth substrate 3, as shown in FIG. Also, it is preferable to make the direction not obtuse and not antiparallel. Specifically, this direction is a direction substantially orthogonal to the normal vector 30, is parallel to the first growth surface 3 a of the growth substrate 3, and is a direction from the vacuum-sucked position toward one end side of the growth substrate 3. It is. Note that antiparallel means that two vectors are parallel and opposite to each other.

  By sliding the sheet-like silicon substrate 60 in such a direction, not only does the force that inhibits the peeling not act on the sheet-like silicon substrate 60 and the peeling becomes easy, but the sheet-like silicon substrate 60 cannot be forced. Will no longer give the power. As a result, it is possible to prevent the sheet-like silicon substrate 60 from being cracked during peeling.

  In the sheet-like substrate peeling apparatus 1 described above, the material of the vacuum suction pad 11 that sucks the sheet-like silicon substrate 60 is not particularly limited, but is preferably formed from a material having high heat resistance. This is because the temperature of the growth substrate 3 and the sheet-like silicon substrate 60 immediately after immersion is relatively high at 150 to 200 ° C., so that the vacuum suction pad 11 formed of a material having low heat resistance is cooled. This is because the sheet-like silicon substrate 60 needs to be peeled off.

  Moreover, it is preferable that the vacuum suction pad 11 is formed from a material having relatively supple properties. This can alleviate the impact on the sheet-like silicon substrate 60, and even if there are minute irregularities on the surface of the sheet-like silicon substrate 60, the vacuum adsorption pad 11 absorbs the minute irregularities and vacuum-sucks. This is because it can be easily performed. Examples of the material having both heat resistance and flexibility include fluorine rubber and silicon rubber.

(Modification 1)
In the sheet substrate peeling apparatus 1 described above, the case where one vacuum suction pad 11 is provided as an example of the vacuum suction pad 11 that vacuum-sucks the sheet-like silicon substrate 60 has been described as an example. Is not limited to one, and for example, as shown in FIGS. 14 and 15, a plurality of vacuum suction pads 11 may be provided. By providing the plurality of vacuum suction pads 11, a plurality of portions of the sheet-like silicon substrate 60 can be vacuum-sucked, and the sheet-like silicon substrate 60 can be held more firmly.

(Modification 2)
Moreover, in the sheet-like substrate peeling apparatus 1 provided with a plurality of vacuum suction pads 11, for example, as shown in FIGS. 16 and 17, at least one vacuum suction pad 11a among the plurality of vacuum suction pads 11a and 11b is a growth substrate. The portion of the sheet-like silicon substrate 60 grown at a distance S1 from the end on the one end side of 3 is not more than one third of the distance L between the end on the one end side and the end on the other end side. If the remaining vacuum suction pad 11b is set so as to be interlocked with the movement of the one vacuum suction pad 11, the remaining vacuum suction pad 11b is placed on one end side of the growth substrate 3. You may arrange | position in the position which adsorb | sucks the part of the sheet-like silicon substrate 60 grown in the place where distance S2 from an edge part is 1/3 or more of the distance L.

  This is due to the following reason. In the sheet-like substrate peeling apparatus 1 shown in FIGS. 16 and 17, the force point acting on the sheet-like silicon substrate 60 grown on the growth substrate 3 is a portion where the sheet-like silicon substrate 60 grips the growth substrate 3 (inside the dotted frame 40 ), The vacuum suction pads 11a and 11b are three portions, each of which sucks the sheet-like silicon substrate 60. Among the three power points, the two vacuum points where the vacuum suction pads 11a and 11b suck the sheet-like silicon substrate 60 are connected to each other by the connecting member 21 and interlocked. Thus, the compressive stress hardly acts on the portion of the sheet-like silicon substrate 60 located between these two power points.

  On the other hand, the two force points of the portion where the sheet-like silicon substrate 60 grips the growth substrate 3 and the portion where the vacuum suction pad 11a adsorbs the sheet-like silicon substrate 60 are relatively small as described above. By being short, the warp and the shear stress due to the compressive stress acting on the sheet-like silicon substrate 60 as the sheet-like silicon substrate 60 slides are relatively small.

(Modification 3)
Further, as the vacuum suction pad 11, for example, as shown in FIGS. 18 and 19, a vacuum suction pad 11 having a rectangular shape for sucking the sheet-like silicon substrate 60 may be used. By applying such a rectangular vacuum suction pad 11, a relatively wide area of the sheet-like silicon substrate 60 is vacuum-sucked, and the sheet-like silicon substrate 60 can be held more firmly.

  The vacuum suction force by the vacuum suction pad 11 is determined by the area of the vacuum suction pad 11 and the vacuum pressure. Since the vacuum suction force suitable for peeling the sheet-like silicon substrate 60 from the growth substrate 3 varies depending on the shape of the vacuum suction pad 11 and the shape of the growth substrate 3, an appropriate suction force can be obtained according to these shapes. It is preferable to change as appropriate.

  Further, in the above-described sheet-like substrate peeling apparatus 1, when the sheet-like silicon substrate 60 peeled from the growth substrate 3 is carried using a Bernoulli suction pad 13 provided separately from the vacuum suction pad 11. However, the sheet-like silicon substrate 60 that has been peeled off using the vacuum suction pad 11 may be transported. In this case, it is not necessary to provide the Bernoulli suction pad 13 separately, and the structure of the sheet-like substrate peeling apparatus 1 can be further simplified.

  In particular, when the sheet-like silicon substrate 60 is transported using the vacuum suction pad 11, the sheet-like silicon substrate 60 can be stably transported in consideration of the center of gravity of the sheet-like silicon substrate 60. It is desirable to adsorb the vacuum suction pad 11. For example, as shown in FIG. 18 and the like, by providing a plurality of vacuum suction pads 11a and 11b, the sheet-like silicon substrate 60 can be stably conveyed without breaking the balance.

  Furthermore, in the sheet-like substrate peeling apparatus 1 described above, the case where the growth substrate 3 is fixed to the fixing base 9 by fitting the dovetail groove 7 of the growth substrate 3 to the fixing base 9 has been described as an example. Alternatively, for example, the side surface of the growth substrate 3 may be fixed. Moreover, the aspect which chucks the dovetail corner part of the growth substrate 3 on a diagonal line may be sufficient. Alternatively, the growth substrate 3 may be fixed by vacuum suction.

  In the sheet-like substrate peeling apparatus 1 described above, the case where the horizontal moving rod 17 and the vertical moving rod 15 are used to move the vacuum suction pad 11 has been described as an example. For example, the vacuum suction pad 11 may be moved. Further, the growth substrate 3 may be moved while the sheet-like silicon substrate 60 is sucked by the vacuum suction pad 11 and is stationary. For the structure for fixing the growth substrate 3 to the fixing base 9 and the mechanism for peeling the sheet-like silicon substrate 60 from the growth substrate 3, the most suitable structure in relation to the production line is selected and applied. Can do.

  Furthermore, as the growth substrate 3 applied to the sheet-like substrate peeling apparatus 1 described above, as long as the growing sheet-like silicon substrate 60 has a structure that grips a portion on one end side of the growth substrate 3, FIG. As described above, the growth substrate 3 as shown in FIG. 5 or 6 may be used, and the grown sheet-like silicon substrate 60 is peeled off from the growth substrate 3 without being damaged. Can be made.

  The main point of the sheet-like substrate peeling apparatus 1 in the present embodiment is that the shear stress applied to the sheet-like silicon substrate 60 at the time of peeling is relatively small, and the distance from one end of the growth substrate 3 is one end and the other. The first growth surface while adsorbing the portion of the sheet-like silicon substrate 60 that grows at a distance of one third or less of the distance L to the portion and has good adhesion to the first growth surface 3a of the growth substrate 3 It is to peel the sheet-like silicon substrate 60 from the growth substrate 3 by sliding in parallel with 3a.

  Therefore, the shape and number of the vacuum suction pads 11, the transfer mode of the peeled sheet-like silicon substrate 60, the fixing mode of the growth substrate 3, the structure of the operation mechanism, the shape of the growth substrate 3 and the like are just examples. However, it is not limited to these.

Embodiment 2
Next, a sheet-like substrate peeling apparatus according to Embodiment 2 of the present invention will be described. As shown in FIGS. 20 and 21, the sheet-like substrate peeling apparatus 1 includes a growth substrate 3 for growing a silicon sheet-like substrate by being immersed in molten silicon, and a sheet-like substrate grown on the growth substrate 3. Vacuum suction pad 11 for peeling the sheet, Bernoulli suction pad 13 for transporting the peeled sheet-like substrate, vertical movement rod 15 and horizontal movement rod for moving the vacuum suction pad 11 or Bernoulli suction pad 13 17 and a fixing base 9 for fixing the growth substrate 3.

  In the sheet-like substrate peeling apparatus 1 according to the present embodiment, in particular, the vacuum suction pad 11 is disposed so as to vacuum-suck the portion of the sheet-like silicon substrate 60 grown on the second growth surface 3b of the growth substrate 3. Yes. In addition, since it is the same as that of the sheet-like board | substrate peeling apparatus shown in FIG. 1 etc. which were mentioned above about another structure, the same code | symbol is attached | subjected to the same member and the description is abbreviate | omitted.

  Next, the peeling operation | movement of the sheet-like silicon substrate 60 by the sheet-like substrate peeling apparatus 1 mentioned above is demonstrated. First, after the sheet-like silicon substrate 60 is grown on the growth substrate 3 by the method described above, the growth substrate 3 is fixed to the fixing base 9 as shown in FIG. Next, as shown in FIG. 21, the horizontal movement rod 17 is moved and brought into contact with the portion of the sheet-like silicon substrate 60 grown on the second growth surface 3 a of the growth substrate 3. Next, evacuation is performed to adsorb the portion of the sheet-like silicon substrate 60 to the vacuum suction pad 11.

  Next, as shown in FIGS. 22 and 23, the horizontal movement rod 17 is parallel to the first growth surface 3 a of the growth substrate 3 (toward the paper surface) in a state where the sheet-like silicon substrate 60 is adsorbed to the vacuum suction pad 11. The sheet-like silicon substrate 60 is peeled from the growth substrate 3 by moving to the left side. The distance to which the horizontal movement rod 17 is moved is preferably longer than the width W of the third growth surface 3c of the growth substrate 3 as in the case of the sheet-like substrate peeling apparatus 1 described above.

  Next, the evacuation is stopped, the vacuum suction pad 11 is separated from the sheet-like silicon substrate 60, and the vacuum suction pad 11 is retracted to a position where there is no hindrance to transport the sheet-like silicon substrate 60. Next, the Bernoulli suction pad 13 is lowered near the center of the sheet-like silicon substrate 60 that is peeled and placed on the first growth surface 3a of the growth substrate 3, and the sheet-like silicon substrate 60 is sucked. Then, as shown in FIG. 24, the Bernoulli suction pad 13 that has sucked the sheet-like silicon substrate 60 is moved to transport the sheet-like silicon substrate 60 to a predetermined position. Thus, a series of peeling operations of the sheet-like silicon substrate 60 is completed.

  According to the sheet-like substrate peeling apparatus 1 described above, the part of the sheet-like silicon substrate 60 grown on the second growth surface 3b of the growth substrate 3 is adsorbed, and the sheet-like silicon substrate 60 is attached to the first growth surface in the adsorbed state. Move parallel to 3a. Thereby, the sheet-like silicon substrate 60 can be peeled from the growth substrate 3 with a high yield without damaging it.

  As described above, the sheet that grows at a distance S from the end on one end side of the growth substrate 3 exceeds a third of the distance L between the end on one end side and the end on the other end side. If the portion of the sheet-like silicon substrate 60 is attracted and slid, not only the compressive stress but also the shearing stress is applied to the sheet-like silicon substrate 60, and the possibility that the sheet-like silicon substrate 60 is destroyed increases.

  On the other hand, when the portion of the sheet-like silicon substrate 60 grown on the second growth surface 3b of the growth substrate 3 is attracted and slid, the compressive stress hardly acts on the sheet-like silicon substrate 60. As a result, the sheet-like silicon substrate 60 can be more reliably peeled off from the growth substrate 3 without breaking.

  Moreover, the sheet-like silicon substrate peeling method by the sheet-like substrate peeling apparatus 1 described above can be applied even when the sheet-like silicon substrate 60 is warped at the time of growth. As described above, when the sheet-like silicon substrate 60 is warped, the sheet-like silicon substrate 60 is in close contact with the growth substrate 3 at a portion on one end side where the second growth surface 3b is located on the growth substrate 3. On the other hand, the portion of the sheet-like silicon substrate 60 that grows on the other end side of the growth substrate 3 opposite to the side on which the second growth surface 3b is located is separated from the surface of the growth substrate 3 or floats. This is the case.

  Therefore, the growth substrate 3 receives the pressing force from the side by vacuum-sucking the portion of the sheet-like silicon substrate 60 grown on the second growth surface 3b where the sheet-like silicon substrate 60 and the growth substrate 3 are in close contact. Therefore, the sheet-like silicon substrate 60 does not act so much. As a result, an unreasonable force does not act on the sheet-like silicon substrate 60, and the possibility that the sheet-like silicon substrate 60 is cracked is reduced.

  After the sheet-like silicon substrate 60 is vacuum-adsorbed, the direction in which the sheet-like silicon substrate 60 is moved is as described above with respect to any of the three normal vectors 30 to 32 of the growth substrate 3 shown in FIG. However, it is preferable that the direction does not form an obtuse angle and does not form antiparallel. Specifically, this direction is a direction substantially orthogonal to the normal vector 30, is parallel to the first growth surface 3 a of the growth substrate 3, and is a direction from the vacuum-sucked position toward one end side of the growth substrate 3. It is. Note that antiparallel means that two vectors are parallel and opposite directions.

  By sliding the sheet-like silicon substrate 60 in such a direction, not only does the force that inhibits the peeling not act on the sheet-like silicon substrate 60 and the peeling becomes easy, but the sheet-like silicon substrate 60 cannot be forced. Will no longer give the power. As a result, it is possible to prevent the sheet-like silicon substrate 60 from being cracked during peeling.

(Modification 1)
In the sheet-like substrate peeling apparatus 1 according to the present embodiment, a plurality of vacuum suction pads 11 may be provided as shown in FIGS. By providing the plurality of vacuum suction pads 11, a plurality of portions of the sheet-like silicon substrate 60 can be vacuum-sucked, and the sheet-like silicon substrate 60 can be held more firmly.

(Modification 2)
Further, as the vacuum suction pad 11, for example, as shown in FIGS. 27 and 28, a vacuum suction pad 11 having a rectangular shape for sucking the sheet-like silicon substrate 60 may be used. By applying such a rectangular vacuum suction pad 11, a relatively wide area of the sheet-like silicon substrate 60 is vacuum-sucked, and the sheet-like silicon substrate 60 can be held more firmly.

(Modification 3)
Furthermore, in the sheet-like substrate peeling apparatus 1 according to the present embodiment, at least one vacuum suction pad 11 that sucks the portion grown on the second growth surface 3b in the sheet-like silicon substrate 60 grown on the growth substrate 3 is provided. If provided, for example, as shown in FIGS. 29 and 30, a vacuum suction pad 11 for sucking a portion of the sheet-like silicon substrate 60 grown on the first growth surface 3a may be further provided. Since the suction pad 11 is provided, the sheet-like silicon substrate 60 can be vacuum-sucked in a wider range, and the sheet-like silicon substrate 60 can be held more firmly.

  Further, the vacuum suction force of the vacuum suction pad 11 described above is preferably changed as appropriate so that an appropriate suction force can be obtained according to the shape of the vacuum suction pad 11 and the shape of the growth substrate 3 as described above. . In addition to moving the vacuum suction pad 11 by the horizontal movement rod 17 and the vertical movement rod 15, the vacuum suction pad 11 may be moved using an articulated robot or the like. Further, instead of providing the Bernoulli suction pad 13, the peeled sheet-like silicon substrate 60 may be transported using the vacuum suction pad 11.

  As described above, as the growth substrate 3, the grown sheet-like silicon substrate 60 is damaged if the growing sheet-like silicon substrate has a structure that grips a portion on one end side of the growth substrate 3. It can peel from the growth board | substrate 3 without this.

  Next, the sheet-like silicon substrate peeling operation by each of the sheet-like substrate peeling devices 1 described above will be specifically described as an example.

(Example of sample preparation for evaluation)
First, 29 kg of a silicon lump (raw material) whose boron (B) concentration is adjusted so that the specific resistance of the sheet-like silicon substrate is 2 Ω · cm is placed in a circular high-purity carbon crucible 1 having an inner diameter of 40 cm. It installed in the chamber 58 of the manufacturing apparatus of the sheet-like silicon substrate shown by FIG.

Next, the inside of the chamber 58 was evacuated by a vacuum pump, and the pressure in the chamber 58 was reduced to 2.66 × 10 ⁻³ Pa or less. Thereafter, argon gas is introduced into the chamber 58 to raise the pressure in the chamber 58 to normal pressure (atmospheric pressure). Thereafter, the argon gas is flowed at a flow rate of 10 × 10 ⁻³ m ³ / min. It continued to flow from the top.

  And the heater 53 for heating was heated up to the temperature of 1500 degreeC on the conditions of the temperature increase rate of 10 degree-C / min. After confirming that the silicon raw material was completely melted in the crucible 51, the temperature of the melted silicon melt 52 was maintained at 1415 ° C. to stabilize the temperature.

  As the growth substrate, a growth substrate 3 obtained by processing a sintered body of high purity graphite into the shape shown in FIG. 1 was used. The size of the first growth surface 3a in the growth substrate 3 was 200 mm × 200 mm. The length (width) of the second growth surface 3b was 4.5 mm, and the length (width) of the third growth surface 3c was 5 mm.

  The growth substrate 3 was immersed in the silicon melt 52 to grow a sheet-like silicon substrate. At this time, the moving speed of the growth substrate 3 was set to 500 cm / min, and the depth at which the growth substrate 3 was immersed in the silicon melt 52 was set to 10 mm at the maximum. Under this condition, the average thickness of the central portion of the first growth surface 3a of the growth substrate 3 is 350 μm, and the sheet-like silicon substrate is in close contact with the growth substrate 3 so as to grip the end portion on one end side of the growth substrate 3. 60 was formed. Then, for the evaluation of peeling, 100 growth substrates 3 were prepared, and a sheet-like silicon substrate 60 was grown on each of them.

  The peeling evaluation for actually peeling the sheet-like silicon substrate 60 grown on the growth substrate 3 in this manner from the growth substrate 3 using various sheet-like substrate peeling apparatuses 1 was performed. Hereinafter, this evaluation will be described.

Example 1
As the sheet substrate peeling apparatus, the sheet substrate peeling apparatus 1 shown in FIG. 1 was used. In the sheet-like substrate peeling apparatus 1, a vacuum suction pad having a suction hole diameter φ of 10 mm was used as the vacuum suction pad 11. The material of the vacuum suction pad was fluororubber, and the vacuum pressure during vacuum suction of the vacuum suction pad 11 was adjusted to −50 kPa. Further, the vacuum suction pad 11 was disposed so that the center of the vacuum suction pad 11 was located at a distance of 10 mm from one end side where the second growth surface 3b of the growth substrate 3 was located.

  Next, the growth substrate 3 was fixed to the fixing base 9 so that the growth substrate 3 did not move when the sheet-like silicon substrate 60 was peeled off. Then, the vertical movement rod 15 was lowered to bring the vacuum suction pad 11 into contact with the sheet-like silicon substrate 60. Next, while holding the sheet-like silicon substrate 60 by vacuum suction and holding the sheet-like silicon substrate 60, the horizontal movement rod 17 is 10 mm in length parallel to the first growth surface 3a of the growth substrate 3 (left side toward the paper surface). The sheet-like silicon substrate 60 was peeled from the growth substrate 3.

  Thereafter, the inside of the vacuum suction pad 11 was brought to atmospheric pressure. Next, the horizontal movement rod 17 was moved to the left by 10 mm in length toward the paper surface, and the vacuum suction pad 11 was retracted. Then, the Bernoulli suction pad 13 was lowered to substantially the center of the sheet-like silicon substrate 60, and the sheet-like silicon substrate 60 was sucked. Finally, while the sheet-like silicon substrate 60 is held by the Bernoulli suction pad 13, the horizontal movement rod 17 and the vertical movement lot 18 are moved, and the sheet-like silicon substrate 60 is conveyed to a predetermined position. 3 and the growth substrate 3 were completely separated.

  The peeling evaluation of the sheet-like silicon substrate 60 was performed on 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as a sample for peeling evaluation. As a result, it was found that 97 sheets out of 100 were able to peel the sheet-like silicon substrate 60 from the growth substrate 3 without breaking the sheet-like silicon substrate 60. It has been demonstrated that it has excellent peelability.

(Example 2)
Next, the sheet-like substrate peeling apparatus 1 provided with a plurality of vacuum suction pads 11 shown in FIG. 14 was used as the sheet-like substrate peeling device. In this case, the material of the vacuum suction pad 11 was fluorine rubber. Further, the suction hole diameter φ of the vacuum suction pad 11 was set to 6 mm, and four vacuum suction pads 11 were arranged with a pitch of 15 mm. Furthermore, it adjusted so that the vacuum pressure at the time of the vacuum suction of the vacuum suction pad 11 might be -40kPa. Each vacuum suction pad 11 was disposed so that the center of the vacuum suction pad 11 was located at a distance of 10 mm from one end side where the second growth surface 3b of the growth substrate 3 was located.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed in the same manner as in Example 1. As a result, it was found that the sheet-like silicon substrate 60 could be peeled from the growth substrate 3 without breaking the sheet-like silicon substrate 60 in 98 out of 100 sheets. It has been demonstrated that it has excellent peelability.

(Example 3)
Next, as the sheet-like substrate peeling device, the sheet-like substrate peeling device 1 provided with a vacuum suction pad 11 having a rectangular suction port shown in FIG. 18 was used. In this case, the material of the vacuum suction pad 11 was made of silicon rubber, and the rectangular suction port was 4 mm × 60 mm in size. Moreover, it adjusted so that the vacuum pressure at the time of the vacuum suction of the vacuum suction pad 11 might be -30kPa. Further, the vacuum suction pad 11 was disposed so that the center of the vacuum suction pad 11 was located at a distance of 10 mm from one end side where the second growth surface 3b of the growth substrate 3 was located.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed in the same manner as in Example 1. As a result, 97 sheets out of 100 sheets were able to peel the sheet-like silicon substrate 60 from the growth substrate 3 without breaking the sheet-like silicon substrate 60, and the sheet-like substrate peeling apparatus 1 was excellent in peeling. It was proved to have sex.

Example 4
Next, as the sheet-like substrate peeling device, the sheet-like substrate peeling device 1 provided with a plurality of vacuum suction pads 11 shown in FIG. 16 (FIG. 17) was used. In this case, the material of the vacuum suction pad 11 was fluororubber. Among the vacuum suction pads 11, the vacuum suction pad 11 a is located at a position where the distance S 1 from one end of the growth substrate 3 on the side where the second growth surface 3 b is located is equal to or less than one third of the length L of the growth substrate 3. In particular, the vacuum suction pad 11a is disposed so that the center of the vacuum suction pad 11a is located at a distance of 10 mm from one end side of the growth substrate 3.

  On the other hand, the vacuum suction pad 11b of the vacuum suction pad 11 is disposed at a position where the corresponding distance S2 is at least one third of the length L. In particular, the center of the vacuum suction pad 11b is one end of the growth substrate 3. The vacuum suction pad 11b was disposed so as to be located at a distance of 100 mm from the side. The suction hole diameter φ of the vacuum suction pad 11a was 8 mm, and the suction hole diameter φ of the vacuum suction pad 11b was 6 mm. Moreover, it adjusted so that the vacuum pressure at the time of the vacuum suction of the vacuum suction pads 11a and 11b might be -40kPa.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed in the same manner as in Example 1. As a result, it was found that 92 sheets out of 100 sheets were able to peel off the sheet-like silicon substrate 60 from the growth substrate 3 without the sheet-like silicon substrate 60 being cracked. It has been demonstrated that it has excellent peelability.

(Example 5)
Next, the sheet-like substrate peeling device 1 provided with the vacuum suction pad 11 shown in FIG. 20 was used as the sheet-like substrate peeling device. In this case, the material of the vacuum suction pad 11 is fluorine rubber, and the suction hole diameter φ of the vacuum suction pad 11 is 4 mm. Furthermore, it adjusted so that the vacuum pressure at the time of the vacuum suction of the vacuum suction pad 11 might be -60kPa. Further, the vacuum suction pad 11 was disposed so that the center of the vacuum suction pad 11 was positioned at the center of the second surface of the growth substrate 3.

  Next, the growth substrate 3 was fixed to the fixing base 9 so that the growth substrate 3 did not move when the sheet-like silicon substrate 60 was peeled off. Then, the horizontal movement rod 17 is moved in a predetermined direction (rightward toward the paper surface) to bring the vacuum suction pad 11 into contact with the portion of the sheet-like silicon substrate 60 grown on the second growth surface 3b of the growth substrate 3. It was. Next, while performing vacuum suction and holding the sheet-like silicon substrate 60 by the vacuum suction pad 11, the horizontal movement rod 17 is moved by a distance of 10 mm in a predetermined direction (leftward toward the paper surface), and the sheet-like silicon substrate 60 is moved. Was peeled from the growth substrate 3.

  Thereafter, the inside of the vacuum suction pad 11 was brought to atmospheric pressure. Next, the horizontal movement rod 17 was moved by a distance of 10 mm parallel to the first growth surface 3a of the growth substrate 3 (leftward toward the paper surface), and the vacuum suction pad 11 was retracted. Then, the Bernoulli suction pad 13 was lowered to substantially the center of the sheet-like silicon substrate 60, and the sheet-like silicon substrate 60 was sucked. Finally, while the sheet-like silicon substrate 60 is held by the Bernoulli suction pad 13, the horizontal movement rod 17 and the vertical movement lot 18 are moved, and the sheet-like silicon substrate 60 is conveyed to a predetermined position. 3 and the growth substrate 3 were completely separated.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed. As a result, it was found that 90 sheets out of 100 sheets were able to peel the sheet-like silicon substrate 60 from the growth substrate 3 without breaking the sheet-like silicon substrate 60. It has been demonstrated that it has excellent peelability.

(Example 6)
Next, the sheet-like substrate peeling apparatus 1 provided with a plurality of vacuum suction pads 11 shown in FIG. 25 was used as the sheet-like substrate peeling device. In this case, the material of the vacuum suction pad 11 was fluorine rubber. Further, the suction hole diameter φ of the vacuum suction pad 11 was set to 4 mm, and six vacuum suction pads 11 were arranged with a pitch of 10 mm. Furthermore, it adjusted so that the vacuum pressure at the time of the vacuum suction of the vacuum suction pad 11 might be -60kPa.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed in the same manner as in Example 5. As a result, it was found that the sheet-like silicon substrate 60 could be peeled from the growth substrate 3 without breaking the sheet-like silicon substrate 60 in 98 out of 100 sheets. It has been demonstrated that it has excellent peelability.

(Example 7)
Next, as the sheet-like substrate peeling device, the sheet-like substrate peeling device 1 provided with the vacuum suction pad 11 having a rectangular suction port shown in FIG. 27 was used. In this case, the material of the vacuum suction pad 11 was made of silicon rubber, and the rectangular suction port was 4 mm × 60 mm in size. Moreover, it adjusted so that the vacuum pressure at the time of the vacuum suction of the vacuum suction pad 11 might be -30kPa.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed in the same manner as in Example 5. As a result, 97 sheets out of 100 sheets were able to peel the sheet-like silicon substrate 60 from the growth substrate 3 without breaking the sheet-like silicon substrate 60, and the sheet-like substrate peeling apparatus 1 was excellent in peeling. It was proved to have sex.

(Example 8)
Next, the sheet-like substrate peeling apparatus 1 provided with a plurality of vacuum suction pads 11 shown in FIG. 29 was used as the sheet-like substrate peeling device. In this case, the material of the vacuum suction pad 11 was fluororubber. Among the vacuum suction pads 11, the suction hole diameter φ of the vacuum suction pad 11 that sucks the portion of the sheet-like silicon substrate 60 grown on the first growth surface 3a of the growth substrate 3 is set to 6 mm, and the vacuum suction pad 11 is pitched to 15 mm. 4 were arranged. On the other hand, among the vacuum suction pads 11, the suction hole diameter φ of the vacuum suction pad 11 that sucks the portion of the sheet-like silicon substrate 60 grown on the second growth surface 3b of the growth substrate 3 is set to 4 mm. Four were arranged with a pitch of 15 mm.

  Moreover, it adjusted so that the vacuum pressure at the time of the vacuum suction of the vacuum suction pad 11 might be -40kPa. The center of the vacuum suction pad 11 that sucks the portion of the sheet-like silicon substrate 60 grown on the first growth surface 3a of the growth substrate 3 is from the end on one end side where the second growth surface 3b of the growth substrate 3 is located. The vacuum suction pad 11 was disposed so as to be located at a distance of 10 mm.

  Next, the horizontal movement rod and the vertical movement rod (not shown) are operated simultaneously, so that each vacuum suction pad 11 is grown on the first growth surface 3a and the second growth surface 3b of the growth substrate 3, respectively. The portion of the substrate 60 was brought into contact. Next, while holding the sheet-like silicon substrate 60 by the vacuum suction pad 11 by performing vacuum suction, the horizontal movement rod is moved parallel to the first growth surface 3a of the growth substrate 3 (left side toward the paper surface), and the sheet The silicon substrate 60 was peeled from the growth substrate 3.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed in the same manner as in Example 5. As a result, it was found that the sheet-like silicon substrate 60 could be peeled from the growth substrate 3 without breaking the sheet-like silicon substrate 60 in 98 out of 100 sheets. It has been demonstrated that it has excellent peelability.

Example 9
Next, the sheet-like substrate peeling apparatus 1 shown in FIG. 1 was used as the sheet-like substrate peeling device. In the sheet-like substrate peeling apparatus 1, a vacuum suction pad having a suction hole diameter φ of 10 mm was used as the vacuum suction pad 11. The material of the vacuum suction pad was fluororubber, and the vacuum pressure during vacuum suction of the vacuum suction pad 11 was adjusted to −50 kPa. Further, the vacuum suction pad 11 was disposed so that the center of the vacuum suction pad 11 was located at a distance of 65 mm from one end side where the second growth surface 3b of the growth substrate 3 was located.

  For 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, peeling evaluation of the sheet-like silicon substrate 60 was performed in the same manner as in Example 1. As a result, the sheet-like silicon substrate 60 could be peeled from the growth substrate 3 without breaking the sheet-like silicon substrate 60 in 79 out of 100 sheets. As a result, the part of the sheet-like substrate 60 located about one third from the one end side of the growth substrate 3 is adsorbed, but the peelability is inferior compared to the cases of Examples 1-8. It has been demonstrated that the film has excellent peelability as compared with Comparative Examples described later.

(Comparative example)
In order to compare the peeling effect of the sheet-like silicon substrate 60 by the sheet-like substrate peeling apparatus 1 shown in FIG. 1 and the like described in the first and second embodiments, as shown in FIG. 31 and FIG. Peeling evaluation was performed using a sheet-like substrate peeling apparatus provided with a vacuum suction pad that sucks the vicinity of the center of the sheet-like silicon substrate 60 grown on the growth substrate 3.

  With respect to 100 growth substrates 3 each having a sheet-like silicon substrate 60 grown as an evaluation sample, the peeling evaluation of the sheet-like silicon substrate 60 is performed under the same conditions as in Example 1 except for the position of the vacuum suction pad 11. It was. As a result, 57 sheets out of 100 sheets were able to peel the sheet-shaped silicon substrate 60 from the growth substrate 3 without breaking the sheet-shaped silicon substrate 60, and 40% or more of the sheet-shaped silicon substrates 60 were damaged. I understood it.

  In the sheet-like substrate peeling apparatus 1 according to each of the above-described embodiments, the case where silicon is grown on the growth substrate 3 has been described as an example. However, other metal materials and semiconductor materials other than silicon are also used. And the metal material or the like can be peeled off from the growth substrate without damaging it.

  The embodiment disclosed this time is an example, and the present invention is not limited to this. The present invention is defined by the terms of the claims, rather than the scope described above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a perspective view of the sheet-like board | substrate peeling apparatus which concerns on Embodiment 1 of this invention. FIG. 2 is a cross-sectional view taken along a cross-sectional line II-II shown in FIG. 1 in the same embodiment. In the same embodiment, it is a fragmentary perspective view for demonstrating the structure of the growth board | substrate applied to a sheet-like board | substrate peeling apparatus. FIG. 4 is a cross-sectional view taken along a cross-sectional line IV-IV shown in FIG. 3 in the same embodiment. In the same embodiment, it is a perspective view which shows the growth board | substrate which concerns on the modification 1 of the growth board | substrate applied to a sheet-like board | substrate peeling apparatus. FIG. 6 is a cross-sectional view taken along a cross-sectional line VI-VI shown in FIG. 5 in the same embodiment. In the same embodiment, it is sectional drawing which shows the manufacturing apparatus of the sheet-like board | substrate which grows a sheet-like board | substrate on a growth board | substrate. FIG. 6 is a first perspective view for explaining the peeling operation of the sheet-like silicon substrate by the sheet-like substrate peeling device in the same embodiment. In the same embodiment, it is sectional drawing for demonstrating the arrangement | positioning relationship between a vacuum suction pad and a growth board | substrate. FIG. 9 is a cross-sectional view taken along a cross-sectional line XX shown in FIG. 8 in the same embodiment. In the same embodiment, it is the 2nd perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by a sheet-like board | substrate peeling apparatus. FIG. 12 is a cross sectional view taken along a cross sectional line XII-XII shown in FIG. 11 in the same embodiment. FIG. 10 is a third perspective view for explaining a sheet-like silicon substrate peeling operation by the sheet-like substrate peeling device in the embodiment. In the embodiment, it is a perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by the sheet-like board | substrate peeling apparatus which concerns on the modification 1. FIG. FIG. 15 is a cross-sectional view taken along a cross-sectional line XV-XV shown in FIG. 14 in the same embodiment. In the embodiment, it is a perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by the sheet-like board | substrate peeling apparatus which concerns on the modification 2. FIG. FIG. 17 is a cross sectional view taken along a cross sectional line XVII-XVII shown in FIG. 16 in the same embodiment. In the same embodiment, it is a perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by the sheet-like board | substrate peeling apparatus which concerns on the modification 3. FIG. FIG. 19 is a cross-sectional view taken along a cross-sectional line XIX-XIX shown in FIG. 18 in the same embodiment. It is a perspective view of the sheet-like board | substrate peeling apparatus which concerns on Embodiment 2 of this invention. FIG. 21 is a first cross sectional view taken along a cross sectional line XXI-XXI shown in FIG. 20 for describing the positional relationship between the growth substrate and the suction pad in the embodiment. FIG. 21 is a second cross sectional view taken along a cross sectional line XXI-XXI shown in FIG. 20 for describing the positional relationship between the growth substrate and the suction pad in the embodiment. FIG. 6 is a first perspective view for explaining the peeling operation of the sheet-like silicon substrate by the sheet-like substrate peeling device in the same embodiment. In the same embodiment, it is the 2nd perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by a sheet-like board | substrate peeling apparatus. In the embodiment, it is a perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by the sheet-like board | substrate peeling apparatus which concerns on the modification 1. FIG. FIG. 26 is a cross sectional view taken along a cross sectional line XXVI-XXVI shown in FIG. 25 in the same embodiment. In the embodiment, it is a perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by the sheet-like board | substrate peeling apparatus which concerns on the modification 2. FIG. FIG. 28 is a cross sectional view taken along a cross sectional line XXVIII-XXVIII shown in FIG. 27 in the same embodiment. In the same embodiment, it is a perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by the sheet-like board | substrate peeling apparatus which concerns on the modification 3. FIG. FIG. 30 is a cross sectional view taken along a cross sectional line XXX-XXX shown in FIG. 29 in the same embodiment. In the same embodiment, it is a perspective view for demonstrating the peeling operation | movement of the sheet-like silicon substrate by the sheet-like board | substrate peeling apparatus which concerns on a comparative example. FIG. 32 is a cross sectional view taken along a cross sectional line XXXII-XXXII shown in FIG. 31 in the same embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Sheet-like board | substrate peeling apparatus, 3 Growth substrate, 3a 1st growth surface, 3b 2nd growth surface, 3c 3rd growth surface, 5 Moat, 7 Dovetail groove, 9 Fixing stand, 11, 11a, 11b Vacuum suction pad, 13 Bernoulli suction pad, 15 vertical moving rod, 17 horizontal moving rod, 19 control unit, 21 connecting member, 30-32, 35-37 normal vector, 51 crucible, 52 silicon melt, 53 heater for heating, 54 crucible base, 55 heat insulating material, 56 crucible raising / lowering mechanism, 57 fixed leg, 58 chamber, 60 sheet-like silicon substrate.

Claims (6)

A growth substrate is formed on the surface of the growth substrate by bringing the growth substrate into contact with a melt of a predetermined material containing at least one of a metal material and a semiconductor material. A sheet-like substrate peeling device for peeling from a substrate,
An adsorbing portion that adsorbs a predetermined portion of the sheet-like substrate grown on the growth substrate;
A moving unit for separating the sheet-like substrate from the growth substrate by moving at least one of the adsorbing unit and the growth substrate unit while the sheet-like substrate is adsorbed by the adsorption unit ;
An unloading section for unloading the peeled sheet-shaped substrate, and another suction section for lifting the sheet-shaped substrate upward from the growth substrate and unloading the sheet-shaped substrate from the growth substrate. Have
The growth substrate is:
A main surface extending in a plane and substantially growing the sheet-like substrate;
A predetermined end face that is provided on one end side of the main surface and grows a portion of the sheet-like substrate in such a manner that the end-side portion of the growth substrate is gripped by the portion of the sheet-like substrate that grows on the main surface; With
The adsorbing portion has the first end of the growth substrate with respect to a first length from an end portion on the one end side of the growth substrate to an end portion on the other end side opposite to the end surface side. A function of adsorbing a portion of the sheet-like substrate grown on a portion located at a second length of one third or less of the first length from the end on the side;
The moving unit has a function of moving the portion of the sheet-like substrate that has grown on the end surface in parallel with the main surface in a state of being separated from the end surface in a state where the sheet-like substrate is adsorbed by the adsorbing unit. , Sheet-like substrate peeling device.   2. The sheet-like substrate peeling apparatus according to claim 1, wherein the moving unit has a function of moving the sheet-like substrate in such a manner that the sheet-like substrate grasps the one end side portion of the growth substrate. . The predetermined end face is
A first end surface connected to the main surface;
The sheet-like board | substrate peeling apparatus of Claim 1 or 2 including the 2nd end surface which has a normal vector antiparallel or obtuse angle with the normal vector of the said main surface, and is connected with a said 1st end surface.   The sheet-like substrate peeling apparatus according to claim 1, wherein the suction unit has a function of sucking a portion of the sheet-like substrate that has grown on the end surface of the sheet-like substrate. A growth substrate is formed on the surface of the growth substrate by bringing the growth substrate into contact with a melt of a predetermined material containing at least one of a metal material and a semiconductor material. A sheet-like substrate peeling method for peeling from a substrate,
As the growth substrate, a main surface that extends in a plane and substantially grows the sheet-like substrate, a portion of the sheet-like substrate that is provided on one end side of the main surface and grows on the main surface, And using a growth substrate having a predetermined end surface for growing the portion of the sheet-like substrate in a manner of grasping the one end side portion of the growth substrate,
An adsorption step for adsorbing a predetermined portion of the sheet-like substrate made of the substance grown on the surface of the growth substrate by bringing the growth substrate into contact with the melt of the substance;
  At least one of the sheet-like substrate and the growth substrate is moved in parallel with the main surface in such a manner that the portion of the sheet-like substrate grown on the end surface with the sheet-like substrate adsorbed is separated from the end surface. A peeling step of peeling the sheet-like substrate from the growth substrate,
An unloading step of lifting the sheet-like substrate peeled off from the growth substrate upward from the growth substrate and carrying out the peeled sheet-like substrate;
With
In the adsorption step, as the predetermined portion, the first length from the end portion on the one end side of the growth substrate to the end portion on the other end side opposite to the side on which the end face is located, A sheet-like substrate in which a portion of the sheet-like substrate grown is adsorbed to a portion located at a second length that is not more than one-third of the first length from the end portion on the one end side of the growth substrate. Substrate peeling method. Applying silicon as the substance,
The sheet-like substrate peeling method according to claim 5, wherein a sheet-like silicon substrate is peeled off as the sheet-like substrate.

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