200527522 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體單晶晶圓之製造方法，特別係關於 可低成本而有效率地生產較小口徑之半導體單晶晶圓之方 法及其執行用之雷射加工裝置。 【先前技術】 今曰’種種半導體裝置均由半導體單晶晶圓製造而成。 而，為提高該等半導體裝置之生產效率，一般都希望儘量 利用大口徑之半導體單晶晶圓製造該等半導體裝置。基於 此種要求，在矽方面，已經培育出12吋（約3〇·5 徑等大 口徑之圓柱狀單晶晶錠，利用切割機及多鋼線鋸由該種晶 旋切取12吋徑之矽單晶晶圓所製成。 另一方面，在III-V族化合物或n-VI族化合物等化合物半 導體中名人培月成大口控之單晶晶錠卻遠比石夕之情形困 難。因此，以往，主要培育2吋（約5·丨cm)徑化合物半導體， 將由由該晶錠切取之2吋徑之化合物半導體單晶晶圓使用 於半導體裝置之製造。 近年來，化合物半導體單晶晶錠之培育技術也有所進 步，有些種類之化合物半導體也已可培育出較大之5吁（約 12.7 cm)及6吋（約15.2 cm)徑之化合物半導體單晶晶錠。 但，如前所述，在4上可利用之化合物半導體單晶晶 圓，以往主要為2忖徑之晶η。因此，利用化合物半導體單 晶晶圓製造半導體裝置之生產線在以往均採用以2忖經之 晶圓為對象之構成。而’如此以2吁徑之化合物半導體單晶 93948.doc 200527522 晶圓為對象之生產線現在仍有多數存在，且尚在運轉之 中。即’即使已可培育出較大之5忖及6叶徑之化合物半導 體單晶晶錠，但從既存之生產線之觀點言之，對2忖徑之化 合物半導體單晶晶圓之需求依然存在。 又，所謂2忖徑之晶81，嚴格說來，並非意味著具有2时 之直徑’ 5%程度之誤差屬於其容許範圍内，生產線也被設 :於：容許5%程度之晶圓徑之變動。此種晶圓徑之誤差之 容許範圍在其他吋徑之晶圓中亦同。 由上述之狀況言之，即使現在已具備5时及6对徑之化合 物半導體單晶晶旋之培育技術之半導體晶圓提供業者，為 因應對2忖徑晶圓之需求，仍會故意去培育2叶徑之化合物 +導體單晶m ’包含形成作為結晶方位之記號之 〇取向平面）及顧客有要求時之IF(索引平面）之加工在 内’通常都會進行晶旋之外周研磨。又，也有形成凹槽以 取代沉㈣之情形。另外，再經過由晶錠之切割工序，而 獲得目的之2吋徑晶圓。 當然’欲以小的2对徑晶圓供應與可利用大的5对及6对徑 晶圓之晶圓面積同等之晶圓面積時，需要大徑晶圓之幾倍 片數之小徑晶圓。欲提供該種多數片之小徑晶圓，必須伴 育多數之小徑晶錠，並需要再由多數晶錠裁切成多數晶圓 之工序。 …此意味著需要有多數單晶培育爐與多數晶圓裁切裝置， 攸晶圓生產成本及效率之觀點而言’並不理想。在該情形 下，雖可考慮在可培育大口徑單晶晶旋之大型爐内培育多 93948.doc 200527522 數錠之小口徑單晶晶錠。但，在該種大型爐内培育多數錠 之小口徑單晶晶錠之培育條件難以均勻地調整，故難以同 時獲得結晶品質均勻而良好之多數之小口徑單晶晶錠。且 欲省略裁切工序，雖可考慮將多數之小口徑單晶晶錠捆紮 而同時裁切，但裁切動作會變得不穩定，難以獲得符合目 的而具有正確結晶面方位之晶圓。 有鑑於此種先前技術之狀況，本發明之目的在於提供可 低成本而有效率地製造較小口徑之半導體單晶晶圓之方法 及其執行用之雷射加工裝置。 【發明内容】 在本發明之半導體單晶晶圓之製造方法中，以可由相對 較大口徑之半導體單晶晶圓切取需要者希望之相對較小口 徑之多數半導體單晶晶圓為其特徵。又，此種半導體單晶 曰曰圓之製造方法在應用於該半導體為GaAs、InP、或GaN等 之化合物半導體之情形時，尤其理想。 被裁切加工之大口徑晶圓最好具有0 · 15 mm以上1.5 mm 以下之厚度。又，晶圓之裁切可利用雷射法、放電加工法、 喷水法、鋼線鋸法、超音波法及利用金剛石電解澱積圓筒 芯之研削法中之一種裁切。尤其以容易施行曲線及直線狀 之自由自在之裁切之雷射法、放電加工法、喷水法、及鋼 線据法可藉XY驅動台控制裝置之設定容易加工〇?與IF，故 較為理想。 在切取中，可由4吋徑以上之大口徑晶圓切取3片以上之2 吋以上之小口徑晶圓，或由5吋徑以上之大口徑晶圓切取4 93948.doc 200527522 片以上之2 α寸以上之小口徑晶圓，或由6 σ寸徑以上之大口 p 晶圓切取7片以上之2吋以上之小口徑晶圓。又，從晶圓之 有效利用之觀點言之’由1片大口徑晶圓切取之多數小口斤 晶圓之總面積最好為大口徑晶圓之面積之50%以上。 大口徑晶圓所含之瑕/疵品（雙晶、多晶、結晶滑移、缺、龜 裂等）為其大口徑晶圓之面積之65%以下時，即可由剩餘1 分切取小口徑晶圓。在切取加工之際，以多數片大口 ^曰 圓重疊之狀態切取小口徑晶圓之情形從加工效率之觀點古 之，亦屬理想。 在各小口徑晶圓最好附有用於識別由大口徑晶圓之何部 分所切取之記號。又，小口徑晶圓可以具有定向平面與索 引平面方式被加工。在該情形，各小口徑之半導體單晶晶 圓最好以具有利用裂開形成定向平面用之支持部用突出區 域方式被加工。另外，用於識別由大口徑晶圓之何部分所 切取之記號最好附在形成該定向平面用之支持部用突出區 域。在小口徑圓晶也可形成容易施行結晶方位之判別及整 列用之凹槽。 小口徑圓晶之切取以利用YAG雷射束執行較為理想，尤 其以利用YAG脈衝雷射執行更為理想。在該情形，最好以 使。脈衝雷射每照射i次時在大口 #圓晶所開設之孔徑有 30%〜87% $複之方式，利用多數孔之相連續切取小口徑圓 晶。大口徑圓晶具有由晶錠直接切割下來之主面、其後被 洗淨之主面、或以10 μιη以下之厚度被蝕刻除去表層之主 面，最好對該種主面照射雷射束。 93948.doc 200527522 裁切A之大口徑圓晶最好利用支持裁切後之小口徑圓晶 用之多數支持手段加以支持，各支持手段最好具有小於小 口徑圓晶之支持區域。該種支持手段可使用真空吸盤。支 持手段也可使用劍山，可利用將重錘配置於載置於劍山上 之晶圓上，或將磁鐵配置於載置於具有磁性之劍山上之晶 圓上，藉以更穩定地支持晶圓。 又，最好噴射氣體，將雷射束裁切時所帶來之殘渣吹掉。 該等氣體及殘潰最好可被吸引而引導至集塵裝置。雷射束 形成之裁切開口寬可利用雷射束調整，使其在相反側比在 晶圓之雷射束人射側窄，裁切面最好對晶圓之主面形成於 65〜85度之範圍内之角度。 在夕數小口徑圓晶之各晶圓附有用於識別由切割自丄條 曰日錠之夕數大口径日日圓之各晶圓之何部分所切取之記號， 由夕數大口徑晶圓之互相對應部分被切取之多數小口徑圓 晶最好集中成1批。 附著於小口徑圓晶之周緣之裁切殘渣最好摩擦除去。 又，小口徑圓晶之外周端面層最好被橡膠砂輪除去〇 3 以下之切削部。外周端面層也可除去〇1 mm以下之切削 部，其外周端面之一方緣或兩方緣最好利用橡膠砂輪施以 倒角。小口徑圓晶之周緣被橡膠砂輪加工後，為除去污染 物，最好將晶圓整體施以蝕刻。 利用雷射束由相對較大口徑之半導體單晶晶圓切取多數 片相對較小口徑之半導體單晶晶圓用之雷射加工裝置可利 用由下方支持由大口徑圓晶裁切之預定之多數小口徑圓晶 93948.doc 10- 200527522 區域用之多數支持手段、含在晶圓上方被χγ台支持之雷射 束放射口之雷射裝置、及喷射氣體以吹掉雷射束裁切所產 生之殘渣用之噴氣裝置所構成。 又，支持手段可包含真空吸盤或劍山，其支持區域設定 於小於小Π徑圓晶之主面。支持手段包含劍山肖，最好進 一步包含配置於載置於該劍山上之晶圓上用之重錘，或配 置於載置於具有磁性之劍山上之晶圓上用之磁鐵。 噴氣裝置也最好與雷射束放射口同時被χγ台所支持。 又，最好進一步設置將氣體及殘渣向晶圓之下方向吸引以 除去該殘渣用之集塵裝置。 作為雷射裝置可使用YAG雷射裝置，使用YAG脈衝雷射 裝置更為理想。雷射束放射口最好利用光纖連接至雷射產 生源。 發明之效果 依據本發明’可提供低成本而有效率地由較大口徑之半 導體單晶晶錠製造較小口徑之半導體單晶晶圓之方法及製 造其之雷射加工裝置。 【實施方式】 (實施形態1) 圖1係在本發明之一實施形態中，以由較大徑半導體單晶 晶錠切取小徑半導體單晶圓之模式的平面圖圖解之情形。 現在，例如在GaAs化合物半導體中，已逐漸可培育出較大 之5忖徑及6忖徑單晶晶鍵。又，在11^化合物半導體中，也 逐漸可培育出4吋以上之較大徑單晶晶錠。 93948.doc -11 - 200527522 在本貝轭形怨1中，首先培育4吋徑（因内含有研削部，故 實際上比4吋稍大)之化合物半導體單晶晶錠，並施行外周 研削及OF之形成。由其被外周研削後之4吋徑錠，利用切割 機及多鋼線鋸等切取4吋徑之晶圓la。而後，如圖丨所示， 由該4吋徑之晶圓la，例如利用雷射裁切，可切取3片2吋徑 之晶圓2 a。該雷射裁切例如可利用圖2之模式的剖面區塊圖 所示之雷射加工裝置執行。 圖2之雷射加工裝置含有漏斗狀金屬容器丨丨。在金屬容器 11内設置多數真空吸盤12。利用該等真空吸盤12支持4吋徑 之晶圓la。由4吋徑之晶圓la切取3片2吋徑之晶圓“時，對 應於該等3片2吋徑之晶圓設置3個真空吸盤丨2。真空吸盤i 2 具有比2吋徑之晶圓2a小之支持區域。各真空吸盤12内向箭 號12a所示方向被排氣，藉以將4吋徑之晶圓u吸引支持於 真空吸盤12。 真空吸盤12具有比預期切取之徑之晶圓小之支持區域， 故該真空吸盤12不會因雷射束而受到損傷。但，基於防止 裁切殘渣鑽入附著於小徑晶圓下面，真空吸盤丨2之徑最好 保持略小於小徑晶圓之徑之程度。例如，如圖1所示，欲切 取50.2 mm徑之小徑晶圓2a時，真空吸盤12之徑最好為49.8 mm程度。如此，真空吸盤12之徑保持略小於小徑晶圓之徑 時’在小徑晶圓背面未被真空吸盤12覆蓋之微小周緣區域 會被其後之周緣研削加工或周緣研磨加工除去，故從加工 後之小控晶圓背面未殘留附著裁切殘渣之觀點言之，甚屬 理想。 93948.doc 200527522 又’為了支持晶圓，亦可使用劍山取代真空吸盤。此種 劍山最好具有略小於預期切取之小徑晶圓之支持區域。為 了更穩定地支持晶圓，最好將重錘配置於載置於劍山上之 晶圓上’或將磁鐵配置於載置於具有磁性之劍山上之晶圓 在晶圓la上方配置支持於XY驅動台（未圖示）之雷射束放 射口（含透鏡等之光學系）13。此雷射束放射口丨3被光纖14 連接至雷射產生裝置15。又，鄰接於雷射束放射口 13配置 有喷氣裝置16。育氣裝置16既可含有配置於雷射束放射口 13周圍之多數喷氣口，也可包含以同軸内包雷射束放射口 13之單一喷氣口。喷氣裝置16也可與雷射束放射口 13共同 支持於XY驅動台。當然，噴氣裝置16係經由可撓性導管（未 圖示）連接於高壓氣體源（未圖示）。作為高壓氣體源，例如 可使用加壓至4 kg/cm2之氮氣或加壓至5 kg/cm2之空氣等。 而，漏斗狀金屬容器11之下方連接於集塵裝置17。 由雷射束放射口 13射出之雷射束13a聚光於半導體單晶 晶圓la。XY驅動台連接於未圖不之控制裝置，可使雷射束 放射口 13自由地在XY平面内移動。裁切圖形可預先記憶於 該控制裝置’ XY驅動台可依照裁切圖形，使雷射束13 a在 晶圓1 a上相對地移動。如此，如圖1所示，由4时徑晶圓1 a 切取3片2吋徑晶圓2a。 在雷射束13a裁切晶圓時，如箭號16a所示，利用噴氣裝 置16將氣體喷射至晶圓裁切區域。利用喷射氣體1 6a吹掉晶 圓之裁切殘渣，可防止裁切殘渣殘留附著於切取後之2,寸徑 93948.doc -13- 200527522 a曰圓之周緣。而後’如箭號1 1 a所示，將金屬容器Η下方之 裁切玟渣及氣體16&吸引至集塵裝置17内。集塵裝置17俘獲 裁切玟渣，如箭號1 7a所示，僅將淨化之氣體由集塵裝置1 7 ㈣出 p 可防止排出裁切殘〉查之粉塵及GaAs半導體中之 As等有毒元素。 如以上所示，1條4吋徑錠之結晶生長工序與切割工序分 別/、、、二過1次處理即可，故與培育1條2吋徑錠之情形相比， 可獲得3倍之片數之2吋徑晶圓。又，使用上述雷射裁切機 籲 能，也可切取附有〇F/IF之晶圓。又，也可在各小口徑晶圓 附加識別記號。在大口徑之化合物半導體晶圓中，有時， 依存於其局部的區域，結晶之質及電的特性可能稍有變 動，故該等識別記號可利用於識別小口徑圓晶由大口徑圓 曰曰之何。卩分被切取，並相互識別各小口徑圓晶。而，在由 同一錠所切割之多數大徑晶圓切取之多數小徑晶圓中，將 具有同一識別記號之多數小徑晶圓集中成同一批，從使小 徑晶圓之特性一致之觀點而言，較為理想。該種識別記號 暴 可利用橡皮印等圖章、格線針或雷射束等劃線等方式附加。 作為雷射產生裝置15，以YAG雷射裝置較為理想，尤其 以YAG脈衝雷射裝置更為理想。與YAG雷射裝置相比，二 氧化碳雷射裝置難以將射束縮小，切割點較粗。又，與yag 雷射裝置相比，準分子雷射裝置較為昂責。即使為yag雷 射，與Q開關雷射相比，脈衝雷射雖切割點較粗，但裁切速 度可增大，故較為理想。 最好以使脈衝雷射每照射！次時在大口後圓晶所開設之 93948.doc -14- 200527522 孔徑有30%〜87%重複之方式，利用多數孔之相連續切取小 口徑圓晶。該等孔不連續時，所切取之小口徑圓晶之周緣 多半會出現裂縫。又，孔徑呈現不滿3〇%之連接狀態時， 小口徑圓晶之周緣之平滑度會降低。反之，孔徑之重複度 過大時’必然地裁切速度會變得過慢。孔徑在相反側小於 在晶圓之雷射束入射側時，該小徑之孔之重複度最好在 30%〜87%之範圍内。 又’如圖3之模式的晶圓剖面圖所例示，雷射束}3a形成 之裁切開口 3之寬可利用雷射束調整，使其在相反側比在晶 圓之雷射束入射側窄，裁切面最好對晶圓之主面形成於 65〜85度之範圍内之角度0。在該情形，被雷射束na熔化 之半導體之液滴可被噴射氣體16a吹掉，使附著於所切取之 小徑晶圓2a之周緣之裁切殘渣變少。此時，對晶圓之主面 之裁切面之傾斜角0可利用調整雷射束之焦點位置及焦點 深度甚至於喷射氣體而使其變化。 在市售之YAG脈衝雷射裝置之一例中，可在20 W至150 W 間調整雷射輸出，振盪頻率在150〜500脈衝/秒之範圍内。 使用此種YAG脈衝雷射裝置，可以約1〇〜30 mm/秒之速度裁 切例如厚約0.5 mm之GaAs晶圓。 預期被雷射裁切之大口徑圓晶最好具有由晶錠直接切割 下來之主面、其後被洗淨之主面、或以1〇 μιη以下之厚度被 姓刻除去表層之主面。大口徑圓晶之主面被加工成鏡面 時，雷射束會被反射而難以裁切。大口徑圓晶具有由晶錠 直接切割下來之主面時，雖可施行裁切，但其主面附著污 93948.doc 200527522 木物之處有可能使小徑晶圓之裁切徑發生變動。該污染物 可利用洗淨加以除去，也可利用厚1()μηι以下之敍刻加以除 去。厚10 μηι以下之蝕刻不致於將晶圓主面加工成雷射難以 裁切之程度之鏡面。 、又’被切取之2时徑晶圓可在圓邊等之周緣研磨及沉及1? 或凹槽形成後經由研磨工序而完成。首先，最好摩擦除去 附著於小徑晶圓之周緣之裁切殘渔。附著於小徑晶圓之周 緣之較大之裁切殘渣不容易利用蝕刻加以除去。摩擦除去 裁切殘逢時，只要利用橡膠砂輪以〇3 mm以下之研削部除 去小徑晶圓之外周端面層即已充分。此係由於雷射裁切可 利用數值控制以較高之精度執行，只要除去小徑晶圓之外 周緣附近之裁切殘潰即已充分之故。又，小徑晶圓之外周 端面層也可以0」mm以下之切削部加以除去，其外周端面 之一方緣或兩方緣也可利用橡膠砂輪施以倒角。如此，也 可充分除去小徑晶圓之外周緣附近之裁切殘渣。 另外如上所述，小口徑圓晶之周緣被橡膠砂輪加工後， 為除去污染物，將晶圓整體施以姓刻加工。例如，GaAs晶 圓可利用氨+過氧化氫系等姓刻液施以㈣加卫。又，Μ 晶圓可利用硫酸+過氧化氫系等蝕刻液施以蝕刻加工。 而’2吋徑晶圓最好依存於製造於其上之半導體裝置而具 有特定之厚度，因此’被切取小經晶圓之大徑晶圓被要求 需具有可實現其小徑晶圓之希望厚度。但，被切取小徑晶 ®之大徑晶圓為降低該大徑晶圓切割時之裂縫及缺陷之不 良之發生，即使裁切成厚於小徑晶圓之希望厚度，在其後 93948.doc -16- 200527522 :工序中:行平面研削’仍可保持小徑晶圓之希望厚度。 丫一 ’大從日日圓超過2mni而過於厚日产甘兩 且無需要用到該種過厚之…射裁切會有困難’ 裁切之容易性及處理之容易度，_般以=大徑晶圓考慮 以下之厚度較為理想。 _以上1.5mm (實施形態2) 圖锡在本發明之實施形態2中，以由5时 曰 圓製造2吋徑半導體單晶晶圓之工序之 *日曰日曰 形。其製造工序可利用鱼上述* 目》解之情 ”上述貧施形態1之情形加以執行。 即，在本實施形態2中’首先培育5时徑(因内含有研削 :外故實際上比5时稍大）之化合物半導體單晶晶錠，並施 ^卜周研削及OF之形成。由其被外周研削後之巧徑鍵，利 用切割機及多鋼線鑛等切取5时徑之晶圓ib。而後，如圖4 所不’利用與實施形態1之情形同樣之雷射裁切，可由該5 寸徑之晶圓lb切取4片2吋徑之晶圓2b。 2’1條5⑩錠之結晶生長卫序與切割工序分別只經⑻ 里：可，故與培育1條2对經錠之情形相比， 仏之片數之2吋徑晶圓。 又由於本發明之雷射裁切可利用數值控制以較高之精 又執仃，故在圖4中如虛線所例示，也可利用雷射 小瑪成 (貫施形態3) 圖5係在本發明之實施形態3中，以由㈣徑 圓製造2叶徑半導體單晶晶圓之工序之平面圖圖 93948.doc -17- 200527522 形。本實施形態3之製造工序也可利用與上述實施形態1之 情形加以執行。 即’在本實施形態3中，首先培育6吋徑（因内含有研削 部，故實際上比6吋稍大）之化合物半導體單晶晶錠，並施 行外周研削及OF之形成。由其被外周研削後之6吋徑錠，利 用切割機及多鋼線鋸等切取6吋徑之晶圓lc。而後，如圖$ 所示，利用與實施形態1之情形同樣之雷射裁切，可由該6 吋徑之晶圓1 c切取7片2吋徑之晶圓2c。 即，1條6吋徑錠之結晶生長工序與切割工序分別只經過1 次處理即可，故與培育丨條2吋徑錠之情形相比，可獲得7 倍之片數之2吋徑晶圓。 (實施形態4) 圖6係關於類似於本發明之實施形態3之實施形態4，以模 式的平面圖圖解由6吋徑半導體單晶晶圓製造2吋徑半導體 單晶晶圓之工序之情形。本實施形態4之製造工序也可利用 與上述實施形態1之情形加以執行。 即，在本實施形態4中，首先培育6吋徑（因内含有研削 部，故實際上比6吋稍大）之化合物半導體單晶晶錠，並施 订外周研削及OF之形成。由其被外周研削後之6吋徑錠，利 用切割機及多鋼線鋸等切取6吋徑之晶圓ld。而後，如圖6 所示，利用與實施形態丨之情形同樣之雷射裁切，可由該6 时之晶圓1 d切取7片2吋徑之晶圓2d。 即，與實施形態3之情形同樣地，在實施形態4中，丨條6 寸仏叙之結s曰生長工序與切割工序也分別只經過1次處理 93948.doc 200527522 即可，故與培育1條2吋徑錠之情形相比，可獲得7倍之片數 之2吋徑晶圓。 另一方面，在圖6之實施形態4中，各2吋徑晶圓2(1係以具 有藉裂開而形成017用之晶片支持部用突出區域2dl之方式 被切取。化合物半導體多半沿著特定之低指數之結晶面具 有顯著之裂開性，可利用該裂開簡便且容易地形成正確之 OF。以往利用裂開形成〇F時，為確保裂開用之支持部區 域，需製作比目的之口徑稍大之口徑之晶圓。但，依據本 實施形態4,利用裂開形成〇F時，可獲得無需準備多餘之大 口徑之晶圓之顯著之優點。 又，在本實施形態4中，可在形成0F用之晶片支持部用 突出區域2dl内附加識別用記號2d2。可藉該種識別用記號 2d2相互識別由i片大口徑圓晶ld之被切取之多數小口徑圓 晶2d。因此，例如可判別多數小口徑圓晶^分別由大口徑 圓晶1 d之何部分被切取。又，作為識別用記號2d2，既可利 用雷射裁切之際之雷射束，將數字寫入突出區域2dl内，也 可附上不同數之點等記號，或附上可識別等之符號。 而，一般，與小徑之單晶晶錠相比，大徑之單晶晶錠之 培育較為困難。此係由於在大徑之單晶晶錠之培育時，與 小徑之單晶晶錠之培育時相比，較容易導入雙晶、多晶、 結晶滑移等各種缺陷之故。以往，由含有該種缺陷之部分 破切取之大徑晶圓無法作為製品出貨而造成浪費。且利用 切割機及多鋼線鋸切取大徑單晶晶圓時，在發生缺陷或裂 痕時，大徑晶圓整體也無法作為製品出貨而造成浪費。但， 93948.doc •19- 200527522 利用上述本發明之半導體單晶晶圓之製造方法時，可獲得 在由含有缺陷之大口徑晶圓巾，可使由不含該缺陷部之部 分所切取之小口徑晶圓順利出貨之大的利益。 又，在上述實施形態中，雖例示雷射裁切法作為由大口 徑晶圓切取小口徑晶圓之手段，但也可利用習知之放電加 工法。利用放電加工法時，只要使用具有對應於所欲切取 之小徑晶圓之形狀之外周形狀之薄壁筒狀之放電電極即 可。此等裁切法外，也可利用習知之鋼線鋸法、超音波法、 及利用金剛石電解電積圓筒芯之研削法等作為裁切法。另 外，只要能夠裁切，當然也可將多數大徑晶圓重疊地同時 施行小徑晶圓之切取加工。 又，現在可裁切之化合物半導體之大徑晶圓雖以6吋徑最 大，但本發明當然也可適用於將來將可製作之8吋徑及12 吋徑等更大徑之晶圓。同樣地，在上述實施形態中，所切 取之小徑晶圓雖為2吋徑，但本發明當然也可適用於由將來 之大徑晶圓切取3吋徑以上之小徑晶圓之情形（例如可由9 对徑晶圓切取7片3吋徑晶圓）。另外，在本發明中，由大徑 晶圓切取之小徑晶圓並無必要互相同徑，例如也可由丨片大 徑晶圓混合地切取2忖徑與3忖徑之小徑晶圓。 又’本發明並非限定於上述之GaAs及InP之化合物半導體 曰曰圓，當然也可適用於GaN等其他任意之化合物半導體晶 圓。 【產業上之可利用性】 如以上所述，依據本發明，可提供低成本而有效率地由 93948.doc •20- 200527522 較大徑之半導體單晶晶錠製造較 〇 方法及其執行用之雷射加工裝置，體早晶晶圓之 成本提供需求仍高之較小徑之化人= 性與低 【圖式簡單說明】]“化5物半導體晶圓。 圖1係在本發明之一實施形態令，圖解由4叶徑半導— 晶晶圓切取2片3忖徑晶圓之樣式之模式的平面圖。 圖2係表示本發明之雷射加工裝置之一例 區塊圖。 j Φ 圖3係表示晶圓之裁切開口之模式的剖面圖。 。圖4係在本發明之另—實施形態中，圖解^忖徑半導體 單晶晶圓切取4片2时徑晶圓之樣式之模式的平面圖。 圖5係在本發明之另一實施形態中，圖解由6吋徑半導體 單晶晶圓切取7片2吋徑晶圓之樣式之模式的平面圖。 圖6係在本發明之另一實施形態中，圖解由6吋徑半導體 單晶晶圓切取具有裂開用支持部區域之7片2心晶圓之= 式之式的平面圖。 【主要元件符號說明】 4吋徑單晶晶圓 5吋徑單晶晶圓 6吋徑單晶晶圓 2吋徑單晶晶圓 裂開用支持部區域 記號 裁切開口 93948.doc 1 a lb 2 3 lc > Id 2a 、 2b 、 2c 、 2d 2dl 2d2 200527522 11 漏斗狀金屬容器 12 真空吸盤 13 雷射束放射口 13a 雷射束 14 光纖 15 雷射產生裝置 16 喷氣裝置 16a 喷射氣體 17 集塵裝置 93948.doc200527522 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a semiconductor single crystal wafer, and more particularly, to a method and a method for producing a small-caliber semiconductor single crystal wafer with low cost and efficiency and the method thereof Laser processing device for execution. [Prior art] Today's various semiconductor devices are manufactured from semiconductor single crystal wafers. However, in order to improve the production efficiency of these semiconductor devices, it is generally desirable to use large-diameter semiconductor single crystal wafers to manufacture these semiconductor devices. Based on this requirement, in silicon, 12-inch (about 30 · 5 diameter and other large-diameter cylindrical single crystal ingots have been cultivated, and the 12-inch diameter is cut from this kind of crystal by using a cutting machine and a multi-steel wire saw. Silicon single crystal wafers. On the other hand, in compound semiconductors such as III-V compounds or n-VI compounds, celebrity Pei Yuecheng's single-crystal ingots are far more difficult than Shi Xi's. Therefore, In the past, compound semiconductors with a diameter of 2 inches (about 5 cm) were mainly cultivated, and compound semiconductor single crystal wafers with a diameter of 2 inches cut from the ingot were used for the manufacture of semiconductor devices. In recent years, compound semiconductor single crystals The ingot cultivation technology has also improved, and some types of compound semiconductors can also grow larger compound semiconductor single crystal ingots with diameters of about 5 cm (about 12.7 cm) and 6 inches (about 15.2 cm). However, as previously mentioned, It is stated that the compound semiconductor single crystal wafers that can be used on 4 are mainly crystals with a diameter of 2 mm. Therefore, the production lines of compound semiconductor single crystal wafers for manufacturing semiconductor devices have conventionally used wafers with 2 mm diameter. For the composition of the object. 'So the production lines for compound semiconductor single crystals with a diameter of 2939939.doc 200527522 wafers still exist in the majority, and are still in operation. That is,' even if larger 5 忖 and 6 leaf diameters can be cultivated Compound semiconductor single crystal ingots, but from the viewpoint of the existing production line, the demand for compound semiconductor single crystal wafers with 2 diameters still exists. Also, the so-called 2 crystal diameter 81 is not strictly meant. With a diameter of 2%, the error of 5% is within its allowable range, and the production line is also set at: Allowed for the variation of 5% of the wafer diameter. The allowable range of this wafer diameter error is in other inch diameters The same is true for the wafers. From the above situation, even if the semiconductor wafer supplier that already has the cultivation technology for compound semiconductor single crystals with 5 and 6 pairs of diameters, Demand, will still deliberately cultivate a compound with a diameter of 2 leaves + conductor single crystal m 'including the formation of the orientation plane as the orientation of the crystal orientation 0) and the customer's request of the IF (index plane) processing' usually crystal Spin Grind on the periphery. In addition, there are cases where a groove is formed instead of the sinker. In addition, the target 2 inch diameter wafer is obtained through the slicing process from the ingot. Of course, if you want to supply a wafer area that is the same as the wafer area of a large 5-pair and 6-pair wafer with a small 2-pair wafer, you need a small-diameter wafer several times the number of wafers with a larger diameter circle. To provide the majority of small-diameter wafers, it must be accompanied by a majority of small-diameter ingots, and the process of cutting the majority of ingots into the majority of wafers is required. … This means that most single crystal incubators and most wafer cutting devices are needed, which is not ideal from the viewpoint of wafer production cost and efficiency. In this case, although it is considered to grow a large number of small crystal single crystal ingots in a large furnace that can grow large diameter single crystal spins. However, it is difficult to uniformly adjust the cultivation conditions of small-diameter single crystal ingots for cultivating a large number of ingots in this large-scale furnace, so it is difficult to obtain at the same time a large number of small-diameter single crystal ingots with uniform and good crystal quality. And if you want to omit the cutting process, you can consider bundling most of the small-diameter single crystal ingots and cutting at the same time, but the cutting operation will become unstable, and it will be difficult to obtain a wafer with the correct crystal orientation according to the purpose. In view of such a state of the art, an object of the present invention is to provide a method and a laser processing device for manufacturing a semiconductor single crystal wafer having a small diameter and a small diameter, which can be efficiently and efficiently produced. [Summary of the Invention] In the method for manufacturing a semiconductor single crystal wafer of the present invention, a plurality of semiconductor single crystal wafers of a relatively small diameter desired by a demander can be cut from the semiconductor single crystal wafers of a relatively large diameter as a feature. In addition, such a semiconductor single crystal manufacturing method is particularly suitable when the semiconductor is a compound semiconductor such as GaAs, InP, or GaN. The large-diameter wafer to be cut and processed preferably has a thickness of 0. 15 mm or more and 1.5 mm or less. In addition, the wafer can be cut by laser, electric discharge machining, water jet, wire saw, ultrasonic, and grinding using a diamond electrolytic deposition cylindrical core. In particular, the laser method, electrical discharge machining method, water jet method, and steel wire method that can easily perform curve and straight-line free and easy cutting can be easily processed by the setting of the XY drive table control device, so it is more convenient. ideal. In cutting, you can cut 3 or more small 2 inch or larger small wafers from 4 inch or larger large diameter wafers, or 4 93948.doc 200527522 or more 2 larger or larger slices from 5 inch or larger large diameter wafers. Small-aperture wafers larger than 2 inches or 7-inch small-aperture wafers larger than 2 inches from large-aperture p-wafers larger than 6 σ inches. From the viewpoint of effective use of wafers, it is desirable that the total area of most small-caliber wafers cut from one large-caliber wafer is 50% or more of the area of large-caliber wafers. When the flaws / defects (double crystal, poly crystal, crystal slip, defect, crack, etc.) in the large-caliber wafer are less than 65% of the area of the large-caliber wafer, the small-caliber can be cut from the remaining 1 Wafer. In the case of cutting processing, the case of cutting small-caliber wafers with a large number of wafers with large openings circling a circle overlapped is ideal from the viewpoint of processing efficiency. Each small-aperture wafer is preferably provided with a mark for identifying which portion of the large-aperture wafer is cut. In addition, small-diameter wafers can be processed with an orientation plane and an index plane. In this case, the semiconductor single crystal wafers of each small diameter are preferably processed so as to have a support region for forming an orientation plane by cracking. In addition, a mark for identifying a portion of a large-diameter wafer is preferably attached to a protruding area for a support portion for forming the alignment plane. In small-diameter round crystals, grooves for easy identification of crystal orientation and alignment can also be formed. The cutting of small-diameter round crystals is ideal for performing with YAG laser beams, especially for performing with YAG pulse lasers. In this case, it is best to use. When the pulse laser is irradiated i times, the diameter of the opening in the large mouth #round crystal has 30% ~ 87%. The method is to use the phase of most holes to continuously cut the small diameter circular crystal. Large-diameter round crystals have a main surface directly cut from the ingot, a main surface that is subsequently washed, or a main surface that is etched to remove the surface layer at a thickness of 10 μm or less. It is best to irradiate the main surface with a laser beam . 93948.doc 200527522 The large-diameter round crystal of the cut A is best supported by most of the support methods used to support the small-diameter round crystal after cutting, and each support method preferably has a smaller support area than the small-diameter round crystal. This support method can use a vacuum chuck. Jianshan can also be used as the support means. A heavy hammer can be placed on a wafer mounted on Jianshan, or a magnet can be placed on a wafer mounted on Jianshan with magnetism to support the wafer more stably. . Also, it is better to spray gas to blow off the residues caused by the laser beam cutting. The gases and blemishes are preferably attracted to the dust collection device. The width of the cutting opening formed by the laser beam can be adjusted by using the laser beam to make it narrower on the opposite side than the laser beam on the opposite side of the wafer. The cutting plane is preferably formed at 65 to 85 degrees to the main surface of the wafer. Angle within range. Each wafer of the small diameter wafer is attached with a mark for identifying which part of each wafer of the large diameter Japanese yen is cut from the date of the ingot, and the large diameter wafer is cut from the wafer. Most of the small-diameter round crystals from which the corresponding parts are cut are preferably concentrated into one batch. The cutting residue adhering to the periphery of small-diameter wafers is best removed by rubbing. Moreover, it is preferable that the outer peripheral end face layer of the small-diameter circular crystal is removed by a rubber grindstone with a cutting portion of 0 or less. It is also possible to remove the cutting part below 0 mm in the outer peripheral end surface layer. One or both edges of the outer peripheral end surface are preferably chamfered by a rubber wheel. After the periphery of the small-diameter wafer is processed by a rubber wheel, it is best to etch the entire wafer in order to remove contamination. A laser processing device for cutting a plurality of relatively small-diameter semiconductor single crystal wafers by using a laser beam from a relatively large-diameter semiconductor single-crystal wafer can utilize a predetermined majority that is cut from a large-diameter circular crystal by supporting from below Small-caliber wafers 94948.doc 10- 200527522 Most support methods used in the area, a laser device containing a laser beam emission port supported by a χγ stage above the wafer, and a gas jet to blow out the laser beam for cutting The residue is composed of a jet device. In addition, the supporting means may include a vacuum chuck or Jianshan, and the supporting area is set to be smaller than the main surface of the small-diameter round crystal. The support means includes Jianshan Xiao, and it is preferable to further include a weight used on a wafer mounted on the sword mountain, or a magnet used on a wafer mounted on the sword mountain with magnetism. The jet device is also preferably supported by the χγ station at the same time as the laser beam emission port. Further, it is preferable to further provide a dust collecting device for sucking the gas and the residue downward to remove the residue. As the laser device, a YAG laser device can be used, and a YAG pulse laser device is more ideal. The laser beam emission port is preferably connected to the laser generation source using an optical fiber. EFFECT OF THE INVENTION According to the present invention, a method for manufacturing a small-caliber semiconductor single crystal wafer from a larger-diameter semiconductor single-crystal ingot and a laser processing device for manufacturing the same can be provided at a low cost and efficiently. [Embodiment 1] (Embodiment 1) FIG. 1 is a plan view illustrating a mode in which a small-diameter semiconductor single wafer is cut from a larger-diameter semiconductor single-crystal ingot in one embodiment of the present invention. Now, for example, in GaAs compound semiconductors, larger 5 忖 diameter and 6 忖 diameter single crystal bonds have gradually been cultivated. In addition, in 11 ^ compound semiconductors, single-crystal ingots having a larger diameter of 4 inches or more can be gradually grown. 93948.doc -11-200527522 In Ben Beyond Complaint 1, first a compound semiconductor single crystal ingot with a diameter of 4 inches (which is actually slightly larger than 4 inches because it contains a grinding section) is first cultivated, and peripheral grinding and The formation of OF. From the 4-inch diameter ingots ground by the periphery, a 4-inch diameter wafer la is cut by a cutter, a multi-wire saw, and the like. Then, as shown in FIG. 丨, from the 4 inch diameter wafer 1a, for example, laser cutting can be used to cut 3 2 inch diameter wafers 2a. This laser cutting can be performed using, for example, a laser processing apparatus shown in a cross-sectional block diagram in the mode of FIG. 2. The laser processing apparatus of FIG. 2 contains a funnel-shaped metal container. A plurality of vacuum chucks 12 are provided in the metal container 11. These vacuum chucks 12 are used to support wafers 1a with a diameter of 4 inches. When 3 wafers with a diameter of 2 inches are cut from a wafer with a diameter of 4 inches, 3 vacuum cups are provided corresponding to the 3 wafers with a diameter of 2 inches. The vacuum cups i 2 have a diameter larger than 2 inches. Wafer 2a has a small support area. Each vacuum chuck 12 is exhausted in the direction shown by arrow 12a, thereby attracting and supporting a 4-inch diameter wafer u to the vacuum chuck 12. The vacuum chuck 12 has a crystal with a diameter larger than expected. The small support area, so the vacuum chuck 12 will not be damaged by the laser beam. However, based on preventing cutting residues from drilling into and attached to the small-diameter wafer, the diameter of the vacuum chuck 2 is preferably kept slightly smaller than The diameter of the wafer. For example, as shown in FIG. 1, when a 50.2 mm diameter small-diameter wafer 2a is to be cut, the diameter of the vacuum chuck 12 is preferably about 49.8 mm. In this way, the diameter of the vacuum chuck 12 is maintained slightly. When the diameter is smaller than the diameter of the small-diameter wafer, the small peripheral area not covered by the vacuum chuck 12 on the back of the small-diameter wafer will be removed by the subsequent peripheral grinding or peripheral grinding. The idea of cutting residue residue is very ideal. 93948.doc 200527 522 Also, in order to support wafers, Jianshan can also be used instead of vacuum chucks. This kind of Jianshan preferably has a support area that is slightly smaller than the expected diameter of the wafer to be cut. In order to support the wafer more stably, it is best to use a heavy hammer Placed on a wafer placed on Jianshan 'or a magnet placed on a wafer placed on Jianshan with magnetism. A laser beam opening supported by an XY driving table (not shown) is placed above the wafer la. (Optical system including lens, etc.) 13. This laser beam emission port 3 is connected to the laser generation device 15 by an optical fiber 14. In addition, a jet device 16 is disposed adjacent to the laser beam emission port 13. The incubation device 16 is not only It may include most of the gas jets arranged around the laser beam emission port 13 or may include a single gas jet port in which the laser beam emission port 13 is coaxially enclosed. The air jet device 16 may also support the XY drive together with the laser beam emission port 13 Of course, the gas injection device 16 is connected to a high-pressure gas source (not shown) via a flexible conduit (not shown). As the high-pressure gas source, for example, nitrogen gas pressurized to 4 kg / cm2 or pressurized to 5 kg / cm2 of air, etc. And, funnel-shaped The lower part of the metal container 11 is connected to the dust collecting device 17. The laser beam 13a emitted from the laser beam emission port 13 is focused on the semiconductor single crystal wafer 1a. The XY driving stage is connected to a control device (not shown) to enable the lightning The beam radiation port 13 can move freely in the XY plane. The cutting pattern can be stored in the control device in advance. The XY driving table can move the laser beam 13 a relatively on the wafer 1 a according to the cutting pattern. As shown in FIG. 1, 3 pieces of 2 inch diameter wafers 2a are cut from the 4 hour diameter wafer 1a. When the laser beam 13a is used to cut the wafer, as shown by arrow 16a, the gas is ejected by the jet device 16 To the cutting area of the wafer. The cutting residue of the wafer is blown off by using a jet gas 16a, which can prevent the cutting residue from remaining on the 2nd edge of the cut after being cut out. 9938.doc -13- 200527522 a round edge. Then, as shown by arrow 1 1a, the cut slag and gas 16 & under the metal container Η are sucked into the dust collecting device 17. The dust collection device 17 captures the cutting slag. As shown by arrow 17a, only the cleaned gas is removed from the dust collection device 17 to prevent the discharge of cutting residues and the poisonous As in the GaAs semiconductor. element. As shown above, the crystal growth process and cutting process of one 4-inch diameter ingot can be processed once, two times, respectively, so compared with the case of cultivating one 2-inch diameter ingot, three times as much can be obtained. 2 inch diameter wafers. In addition, the above-mentioned laser cutter can be used to cut wafers with 0F / IF. In addition, identification marks may be added to each small-diameter wafer. In large-diameter compound semiconductor wafers, depending on the local area, the quality and electrical characteristics of the crystal may change slightly. Therefore, these identification marks can be used to identify small-diameter round crystals from large-diameter rounds. Said He. The centipede was cut and each small-caliber round crystal was recognized. In addition, among the majority of small-diameter wafers cut from the majority of large-diameter wafers cut by the same ingot, a plurality of small-diameter wafers having the same identification mark are grouped into one batch, from the viewpoint of making the characteristics of the small-diameter wafers consistent. It is more ideal. This type of identification mark can be attached by stamps such as rubber stamps, ruled lines or laser beams. As the laser generating device 15, a YAG laser device is preferable, and a YAG pulse laser device is particularly preferable. Compared with the YAG laser device, the carbon dioxide laser device is difficult to reduce the beam, and the cutting point is thicker. In addition, compared with yag laser devices, excimer laser devices are more responsible. Even if it is a yag laser, compared with a Q-switched laser, although a pulse laser has a thicker cutting point, the cutting speed can be increased, which is ideal. It is best to make a pulsed laser every irradiation! 93948.doc -14- 200527522, which was set up by Houhou Jing at the next time, has a pore size of 30% ~ 87% in a repeating manner, using the phases of most holes to continuously cut small-diameter round crystals. When the holes are discontinuous, the periphery of the small-diameter round crystals that are cut will most likely appear cracks. In addition, when the pore diameter is less than 30% in a connected state, the smoothness of the peripheral edge of the small-diameter round crystal is reduced. On the contrary, if the repetition of the aperture is too large, the cutting speed will inevitably become too slow. When the aperture is smaller on the opposite side than on the incident side of the laser beam of the wafer, the repeatability of the small diameter aperture is preferably in the range of 30% to 87%. Also as shown in the wafer cross-sectional view of the mode of FIG. 3, the width of the cutting opening 3 formed by the laser beam} 3a can be adjusted by the laser beam so that it is on the opposite side than the laser beam incident side of the wafer Narrow, the cutting plane is preferably formed at an angle 0 within the range of 65 ~ 85 degrees to the main surface of the wafer. In this case, the droplets of the semiconductor melted by the laser beam na can be blown off by the jet gas 16a, so that the cutting residue attached to the periphery of the cut-out small-diameter wafer 2a can be reduced. At this time, the inclination angle 0 of the cutting plane of the main surface of the wafer can be changed by adjusting the focal position and focal depth of the laser beam or even ejecting the gas. In one example of a commercially available YAG pulse laser device, the laser output can be adjusted from 20 W to 150 W, and the oscillation frequency is in the range of 150 to 500 pulses / second. With such a YAG pulse laser device, a GaAs wafer having a thickness of, for example, about 0.5 mm can be cut at a speed of about 10 to 30 mm / sec. It is expected that the large-diameter round crystal cut by the laser preferably has a main surface directly cut from the ingot, a main surface that is subsequently washed, or a main surface engraved with a thickness of 10 μm or less to remove the surface layer. When the main surface of a large-diameter round crystal is processed into a mirror surface, the laser beam is reflected and difficult to cut. When a large-diameter round crystal has a main surface cut directly from an ingot, although cutting can be performed, the main surface may be stained. 93948.doc 200527522 The cutting diameter of small-diameter wafers may change. This pollutant can be removed by washing, or it can be removed by using a thickness of less than 1 (μm). Etching with a thickness of 10 μm or less does not allow the main surface of the wafer to be processed into a mirror surface that is difficult for laser cutting. The second-diameter wafer that has been cut can be polished and sunk at the periphery of a round edge, etc., or formed by a grinding process after the groove is formed. First, it is best to rub away the cutting remnants attached to the periphery of the small-diameter wafer. Large cutting residues attached to the periphery of small-diameter wafers cannot be easily removed by etching. Friction removal At the time of cutting, it is sufficient to use a rubber grinding wheel to remove the peripheral end face layer except the small-diameter wafer in a grinding section of 0 mm or less. This is because laser cutting can be performed with high accuracy using numerical control, as long as cutting residues near the periphery of small-diameter wafers are eliminated, it is sufficient. In addition, the outer peripheral end surface layer of the small-diameter wafer may be removed by a cutting portion of 0 mm or less, and one or both edges of the outer peripheral end surface may be chamfered by a rubber wheel. In this way, the cutting residue near the outer periphery of the small-diameter wafer can be sufficiently removed. In addition, as described above, after the peripheral edge of the small-diameter round crystal is processed by a rubber grinding wheel, the entire wafer is subjected to surname processing in order to remove the contaminants. For example, GaAs crystals can be applied to engraving with a surname such as ammonia + hydrogen peroxide. In addition, the M wafer can be etched by using an etching solution such as sulfuric acid + hydrogen peroxide. And the '2 inch diameter wafer is best to have a specific thickness depending on the semiconductor device manufactured on it, so' the large diameter wafer from which the small warp wafer is cut is required to have the hope of realizing its small diameter wafer thickness. However, the large-diameter wafer with the small-diameter wafer cut out is to reduce the occurrence of cracks and defects during the cutting of the large-diameter wafer, even if it is cut to a thickness greater than the desired thickness of the small-diameter wafer, followed by 93948. doc -16- 200527522: In the process: plane grinding can still maintain the desired thickness of small diameter wafers. Yayi 'Greater than Japanese yen and more than 2mni, too thick Nissan sweet and no need to use this kind of too thick ... Shooting will be difficult to cut' Ease of cutting and ease of processing, _ general with = large diameter It is ideal to consider the following thickness of the wafer. _ 1.5mm above (Embodiment 2) In the embodiment 2 of the present invention, the tin tin is manufactured in a process of manufacturing a 2 inch diameter semiconductor single crystal wafer from 5 o'clock in a circle. The manufacturing process can be carried out by using the above-mentioned "eye" of the fish "Under the circumstances" "the above-mentioned poor application mode 1". That is, in this embodiment 2 'first cultivate 5 hours (because it contains grinding: external, actually it is better than 5 (Slightly larger) of compound semiconductor single crystal ingots, and the formation of the slab grinding and OF. From the clinching keys after the slab grinding by the periphery, the 5 hour diameter wafer was cut using a cutting machine and multi-steel wire ore. ib. Then, as shown in Fig. 4, the same laser cutting as in the case of Embodiment 1 is not used, and 4 pieces of 2 inch diameter wafers 2b can be cut out from the 5 inch diameter wafer lb. 2'1 5⑩ ingot The crystal growth order and dicing process only pass through the iris: Yes, so compared with the case of cultivating a 2 pairs of warp ingots, the number of wafers with a diameter of 2 inches is also due to the laser cutting of the present invention. Numerical control can be used to execute with higher precision. Therefore, as shown by the dotted line in Figure 4, you can also use a laser small marshmallow (Performance Form 3). Figure 5 is in Embodiment 3 of the present invention. A plan view of a process for manufacturing a 2-leaf semiconductor single crystal wafer from a diameter circle is 93948.doc -17- 200527522. The manufacturing method of the third embodiment The manufacturing process can also be carried out in the same manner as in the first embodiment. That is, in this third embodiment, a compound semiconductor single crystal with a diameter of 6 inches (because it contains a grinding section, which is actually slightly larger than 6 inches) is firstly cultivated. The crystal ingot is subjected to peripheral grinding and the formation of OF. From the 6-inch diameter ingot that was ground by the periphery, a 6-inch diameter wafer lc is cut using a cutter and a multi-wire wire saw. Then, as shown in FIG. Using the same laser cutting as in the case of Embodiment 1, 7 pieces of 2 inch diameter wafers 2c can be cut from the 6 inch diameter wafer 1 c. That is, one 6 inch diameter ingot crystal growth process and cutting process Only one treatment is required after each treatment, so compared with the case of cultivating a 2 inch diameter ingot, a 2 inch diameter wafer with 7 times the number can be obtained. (Embodiment 4) FIG. 6 is a diagram similar to the present invention. The fourth embodiment of the third embodiment is a schematic plan view illustrating a process of manufacturing a 2-inch semiconductor single-crystal wafer from a 6-inch semiconductor single-crystal wafer. The manufacturing process of the fourth embodiment can also be used as described above. The first aspect is executed. That is, in the fourth embodiment, first, Compound semiconductor single crystal ingots with a 6-inch diameter (because it contains a grinding section, which is actually slightly larger than 6 inches), and the formation of peripheral grinding and OF are ordered. From the 6-inch diameter ingots that have been ground, A 6-inch wafer ld is cut by a cutting machine, a multi-wire saw, etc. Then, as shown in FIG. 6, the same laser cutting as in the embodiment 丨 is used to cut the wafer at 1 d at 6 o'clock. Seven 2 inch wafers 2d. That is, in the same manner as in the third embodiment, in the fourth embodiment, the 6-inch knots s, that is, the growth process and the slicing process have undergone only one treatment, respectively. 93948 .doc 200527522 is enough, so compared with the case of cultivating a 2 inch diameter ingot, a 2 inch diameter wafer with 7 times the number can be obtained. On the other hand, in Embodiment 4 of FIG. 6, each of the 2-inch diameter wafers 2 (1 is cut out to have a wafer support portion protruding region 2dl for forming 017 by cracking. Compound semiconductors are mostly along The specific low-index crystal surface has significant cracking properties, and the correct OF can be easily and easily formed by this cracking. In the past, when the 0F was formed by cracking, in order to ensure the area of the support portion for cracking, a ratio of The target has a slightly larger diameter wafer. However, according to the fourth embodiment, when an OF is formed by cracking, a significant advantage is obtained in that it is not necessary to prepare an extra large-diameter wafer. Also, in the fourth embodiment, The identification mark 2d2 can be added to the protruding area 2dl for forming the wafer support portion of the 0F. The identification mark 2d2 can be used to identify each other from the large-diameter circular crystal ld. Therefore, for example, it is possible to discriminate which part of the large-diameter wafer 1 is cut by the large-diameter wafer 1d. Also, as the identification mark 2d2, the laser beam at the time of laser cutting can be used to divide the number Written in the protruding area 2dl, also It is possible to attach symbols such as points with different numbers, or to identify such symbols. In general, compared with single-crystal ingots with small diameters, the cultivation of single-crystal ingots with large diameters is more difficult. This is because When growing single-crystal ingots with large diameters, it is easier to introduce defects such as twin crystals, polycrystals, and crystal slippage than when growing single-crystal ingots with small diameters. In the past, such defects were included. Some of the large-diameter wafers that are broken and cut cannot be shipped as products and cause waste. When using large-diameter single-crystal wafers to be cut with a cutter and multi-wire saw, the entire large-diameter wafer cannot be used when defects or cracks occur. Wasted as a product shipment. However, 93948.doc • 19- 200527522 When using the above-mentioned manufacturing method of the semiconductor single crystal wafer of the present invention, a large-caliber wafer towel containing defects can be obtained. The small-aperture wafer obtained by cutting out the defective part is of great benefit for smooth shipment. In the above-mentioned embodiment, although the laser cutting method is exemplified as a method for cutting a small-aperture wafer from a large-aperture wafer, Also known as EDM When using the electric discharge machining method, it is only necessary to use a thin-walled cylindrical discharge electrode having a peripheral shape corresponding to the shape of the small-diameter wafer to be cut. Besides these cutting methods, a conventional steel wire saw can also be used. Cutting methods such as the ultrasonic method, the ultrasonic method, and the grinding method using a diamond electrodeposited cylindrical core, etc. In addition, as long as the cutting can be performed, it is of course possible to perform the cutting of the small-diameter wafer by overlapping most of the large-diameter wafers. In addition, although the large-diameter wafers of compound semiconductors that can be cut now have the largest 6-inch diameter, the present invention is of course applicable to larger-diameter wafers such as 8-inch and 12-inch diameters that will be made in the future. Similarly, in the above-mentioned embodiment, although the small-diameter wafer cut is 2 inches in diameter, the present invention is of course applicable to the case of cutting small-diameter wafers with a diameter of 3 inches or more from future large-diameter wafers. (For example, 7 3-inch wafers can be cut from 9 pairs of wafers). In addition, in the present invention, small-diameter wafers cut from large-diameter wafers do not necessarily have the same diameter as each other. For example, small-diameter wafers of 2 and 3 diameters may be cut from a mixture of large-diameter wafers. In addition, the present invention is not limited to the above-mentioned compound semiconductors of GaAs and InP, but can be applied to any other compound semiconductor wafers such as GaN. [Industrial Applicability] As described above, according to the present invention, it is possible to provide a low-cost and efficient method for manufacturing a semiconductor single crystal ingot with a larger diameter from 93948.doc • 20- 200527522 and its implementation. Laser processing device, the cost of bulk crystal wafers is still high, and the demand for smaller diameters = high performance and low cost [Simplified illustration of the figure] "5 semiconductor wafers. Figure 1 is in the present invention. An embodiment order is a plan view illustrating a pattern in which two 3 忖 diameter wafers are cut from a 4-leaf semiconductor-crystal wafer. FIG. 2 is a block diagram showing an example of a laser processing apparatus of the present invention. J Φ Fig. 3 is a cross-sectional view showing a pattern of a cutting opening of a wafer. Fig. 4 is a diagram illustrating a pattern of cutting a 2-diameter semiconductor single crystal wafer into four 2-diameter wafers in another embodiment of the present invention. A plan view of the mode. Fig. 5 is a plan view illustrating a pattern in which 7 2 "diameter wafers are cut from a 6" semiconductor single crystal wafer in another embodiment of the present invention. Fig. 6 is another aspect of the present invention. In one embodiment, the illustration shows that a 6-inch diameter semiconductor single crystal wafer is cut with a crack A plan view of 7 = 2 core wafers in the support area area. [Description of main component symbols] 4 inch diameter single crystal wafer 5 inch diameter single crystal wafer 6 inch diameter single crystal wafer 2 inch diameter single Crystal wafer cracking support area mark cutting opening 93948.doc 1 a lb 2 3 lc > Id 2a, 2b, 2c, 2d 2dl 2d2 200527522 11 Funnel-shaped metal container 12 Vacuum chuck 13 Laser beam emission port 13a Laser beam 14 Optical fiber 15 Laser generating device 16 Jet device 16a Jet gas 17 Dust collecting device 93948.doc