TWI232074B - Hybrid integrated circuit - Google Patents
Hybrid integrated circuit Download PDFInfo
- Publication number
- TWI232074B TWI232074B TW93105051A TW93105051A TWI232074B TW I232074 B TWI232074 B TW I232074B TW 93105051 A TW93105051 A TW 93105051A TW 93105051 A TW93105051 A TW 93105051A TW I232074 B TWI232074 B TW I232074B
- Authority
- TW
- Taiwan
- Prior art keywords
- pads
- aforementioned
- wiring layer
- integrated circuit
- conductive
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 238000003466 welding Methods 0.000 claims abstract description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 58
- 238000005476 soldering Methods 0.000 claims description 21
- 239000007767 bonding agent Substances 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/067—Horizontally disposed broiling griddles
- A47J37/0682—Horizontally disposed broiling griddles gas-heated
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
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- H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
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Description
1232074 玖、發明說明: 【發明所屬之技術領域】 本發明係關於晶片元件之端子電極安裝於配置在導電 配線層之焊墊的混合積體電路。 【先前技術】 最近使用於攜帶用電腦或印表機等的電子機器之晶片 70件,有著小型化、薄型化以及輕量化的迫切需求。因此, 在做為晶片元件中,有一種在基板上安裝半導體元件,並 將該基板以絕緣樹脂塑模(则⑷之封裝型半導體電路。 第18圖為傳統之封裝料導體㈣電路。封裝型半導
LSI(large scale integated circuit : A 積體電則等裸晶片3介由焊材2安裝於晶粒焊墊】,並利 用金屬細線6使該禮曰y )从兩Λ 更哀裸曰曰片3的電極(未圖示)與引線端子5 連接。 此外,以絕緣性樹脂層9覆蓋晶粒焊墊1以及裸晶片 ^周圍;;在前述封裝型半導體電路中,引線端子5係以 、θ材9安裝於印刷在安裝基板7的印刷配線$上。 此封裝型半導體積體電路’由於其引線端子5係由絕 ;性樹脂層9露出於外部,因此雖較易進行焊接,但因其 整體的安裝尺寸偏大’而有不易達到小型化、薄型化以及 輕量化的問題。 第19圖以及第2〇圖,為改良前述封裝型半導體基體 電路後之混合積體電路之平面圖以及剖面圖。 等裸θ曰片1 0 ’係安裝在形成於導電配線層1 1上的 315544 5 1232074 晶粒焊墊1 1A。此外,位於晶片電容器1 7兩端之電極 17Α1、ΠΑ2,直接焊接於形成在導電配線層14Α1上的焊 墊 15Α1、15Α2。 接著,LSI等裸晶片10的電極13Α1與形成於焊塾 15A1之接合焊墊15B1,係藉由金屬細線16A1連接。此外, LSI等裸晶片1〇之其他電極13a2、13A3......13A7與形成 於導電配線層14A1的接合焊墊15B2、15B3......15B7,則 精由金屬細線16A2、16A3......16A7......連接。 如第20圖(A)所示,導電配線層η、14A1……14A7·.· 上部係藉由分離溝1 8A、1 8B…進行電性分離,但其下部 依然連接。 以絕緣性樹脂20覆蓋導電配線層丨丨、14A1… 1 4A7 ·、安裝於導電配線層丨丨的裸晶片丨〇以及金屬細線 16Α1.·.16Α7…的整體部分。之後,如一點鏈線所示,一起 切斷導電配線層η、14Α1".14Α7下部的連接部分與絕緣 性樹脂2〇,使導電配線層η與導電配線層ΐ4Αρ..ΐ4Α7... 得以達到完全電性分離。 如第20圖(Β),在導電配線層u、14Ai…Μ"…的下 面’呈現自絕緣性樹脂2〇外露的型態。導電配線層U、 购:14Α2...的露出部分,為與外部進行電性連接,設置 焊錫等的焊材形成外部電極2 1 a··. 2 1 λ 7 „^ 1A7···。此外,在未言5 置導電配線層11、14A1、14Α2···14Α7从, Α7···的外部電極的部 为,則覆蓋有用以保護導電配線層等之阻劑膜23。 第21圖為混合積體電路的重、 里要;分放大圖。晶片電溶 315544 6 1232074 Ή的端子電極17A1、17A2係藉由焊材%固定於形成 在導電配線層14A1、14A2的焊墊15A1、15A2。 [專利文獻] 曰本特開平04-162691號公報 【發明内容】 [發明所欲解決的課題] 形成混合積體電路之晶片電容器1 7的端子電極 17A1、17A2,係利用焊錫等焊材26安裝於形成在導電配 線層 14A1、14A2 之焊墊 15A1、15A2。 如第22圖所示,混合積體電路之外部電極,為了安穿 於印刷基板24的印刷配線25A1、25A2···上而進行加=: 當進行加熱時,該熱會傳導到焊墊15A1、15A2,因安裝 端子電極uahm與焊墊15A1、15A2的焊材26:解、, 而會導致焊墊1SA1、BA2之間產生短路。 更南之焊材,來安 、1 5A2也是一種可 此外以較形成外部電極的焊材熔點 裝端子電極17A1、17A2···與焊墊15A1 行方法。 但,由於施加於端子電極17A1、17A2的鍍覆中含有 錫。當前述的熱能,傳導至端子電極17A1、17A2時^鍍 覆中所含的錫會熔化並熔解至焊材26中,而導致焊材^ 的熔點降低。因此,即使使用高熔點焊材作為焊材%,焊 材26也會炼解,並導致焊墊15A1、15A2間產生短路。 此外,也可嘗試使用導電性接合劑來安裝端子電極 1^、17A2與焊塾15A1、15A2。利用導電性接合劑安裝 315544 7 1232074 端子電極17A1、17A2···與焊墊15A1、15A2時,若導電接 合劑過量時會外流,而導致焊墊15A1、15A2之間發生短 路。此外,為將外部電極安裝於印刷基板24的印刷配線 25A1、25A2而進行加熱時,會導致導電性接合劑的接合 力降低,同時造成端子電極17Α^17Α2與焊墊ΐ5Α^ΐ5Α2 間的接合力不足之問題。 [解決課題之手段] 本發明係提供-種混合積體電路,使晶片元件的端子 電極與形成於導電配線層的焊墊得以進行良好安裝者, 配置有:兩端形成有端子電極之晶片元件;對應前述 端子電極而配設有複數焊墊的導電配線層;覆蓋前述焊塾 以外之前料電配線層的外覆層樹脂;以及與前述導電配 線層電性連接,並露出於下面之外部電極,其巾,前述晶 =件的料係在以焊材安裝之前料墊間的外覆 層樹脂中設有空間部。 ::明又提供一種混合積體電路,配置有:兩端形成 晶片元件;對應前述端子電極而設有複數焊 外覆層樹脂;以及由焊材所構成:之…電配線層的 線層電性連接,並由露出得以與前述導電配 晶片元件的端子電極,係在:::::電極’其中’前述 絕緣性樹脂。 在4材女裝之前述焊墊間設有 本發明提供一種使用底部填 *、縫Μ月曰做為前述焊塾間的 絕緣性樹脂的混合積體電路。 巧引:坪登間的 315544 8 1232074
本發明係提供—錄、B 有端子電極之晶片積體電路’配置有:兩端形成 洋塾的導電配線層ΓιΓ應前述端子電極而配設有複數 的外覆層樹脂;以及:焊塾:外:前述:電配線層 線層電性連接,並露出 之侍以與刖述導電配 片元件的端子電極進下面之之外部電極,係對前述晶 極盥π故θ 仃不含錫的鍍覆,而黏接前述端子電 之二二料材’係以融點高於形成前述外部電極的焊材 之尚熔點焊材予以安裝。 电位的知材 本發明係提供-種現合積體電路, :端子電極的晶片元件;對應前述端子電極而有 塾的導電配線層;由覆蓋前述焊墊以外之前述導 的:卜覆層樹脂所形成,於前述焊塾上設有導電性接合:: 而2述焊塾間設置絕緣性接合劑,利用前述絕緣性接合 Μ使刚述晶片元件主體接合於前述外覆層樹脂而利用前 述導電性接合劑使前述晶片元件之端子電極接合於前 墊。 Τ 【實施方式】 根據第1圖至第17圖’說明本實施型態之混合積體電 路。 第1圖以及第2圖為本實施型態之混合基體電路的平 面圖以及剖面圖。薄片31’係由接合於絕緣樹脂膜32的 第!導電膜33與第2導電膜34所構成。第”電膜” 與第2導電膜34係藉由多層連接構造42#互連接。將第 1導電膜33蝕刻成所需的圖案以形成第i導電配線層35, 315544 9 1232074 並安裝半導體電路元件37A與晶片元件37b。 片-杜首體電路凡件37A可為LSI或Ic的裸晶片等,晶 '牛37B為晶片電容器或晶片電阻等的電路元件。 :1導電配線層35及半導體電路元件37a與晶片元 係被密封樹脂層43所覆蓋。此外,將第2導電膜 Μ敍刻成所需的圖案形成第2導電配線層%。之後,在第 2導電配線層36的指定部位形成由焊材構成的外部電極 44 〇 半導體電路元件37A安裝於形成在外覆層樹脂38上 的曰曰粒*干墊3 8 A上。$,位於晶片電容器3 7B兩端的電極 3叩料接於形成於導電配線層35之焊塾4G上面。此外, 在本實施型態中,焊墊4〇的表面形成有鍍覆膜52。 接著,半導體電路元件37A的電極39A1與接合焊墊 39B1,係藉由金屬細線41Al相互連接。此外,半導體電 路70件37A的其他電極39A2、39Α3···39Α7與接合焊墊 39Β2、39Β3···39Β7,則藉由金屬細線 41Α2、41Α3···417Α7 進行連接。 根據第3圖至第1 〇圖說明前述混合積體電路之製造方 法。 如第3圖所示,將第1導電膜33與第2導電膜34以 絕緣樹脂層32接合形成薄片31。 接著如第4圖所示,在薄片31的所要位置之第1導電 膜33以及絕緣樹脂膜32形成貫通孔52,選擇性地露出第 2導電膜34。 10 315544 1232074 :第5圖所示,在貫通孔52形成多層連接構造& 、連接弟1導電膜33與第2導電膜34。 _!二1°第6圖以及第7圖所示,將帛1導電膜33 ^所需的圖案’形成第1導電配線層35與焊塾4〇。 以露t ’以外覆層樹脂38覆蓋其他部分,使焊塾40得 =7圖所示’考慮結合性在焊塾4〇上形 銀(Ag)等的鍍覆膜52。 了絕緣’在晶粒焊墊38α、焊墊4。上 兀件37Α與晶片元件37Β。藉由金屬細線41連 料¥體電路元件37Α的各電極焊墊39Α與焊墊40。此 曰曰片兀件37Β的端子電極39Β ’係安裝於焊塾* 面。 如第9圖所示,以密封樹脂層43 35以及半導體電路元件37八等。 ¥電配線層 :第丄〇圖所示’將第2導電膜34姓刻 形成第2導電配绫展以 U未 、、泉層36。之後,以外覆層樹 焊材所形成之外部雷朽, 復盍由 路。 p電極44以外的部分,構成混合積體電 第11圖以及第12圖, 電路特徵的重要部位平面圖 3 7B為晶片電容器或晶片電 施以鍍覆之端子電極39B。 為顯示本實施型態之混合積體 以及剖面圖。前述晶片元件 阻等的電氣零件,其兩端具有 315544 11 1232074 此外,如先前所述,在第1導電配線層3 5,形成有對 應端子電極39B的焊墊40。並在焊墊40間形成有可使焊 材46溢出之空間部47。因此,形成空間部47的周圍被外 覆層樹脂38所包圍。將空間部47設定為寬0.23cm,長 0.10cm的大小,但是其大小會隨安裝晶片元件37而有所 不同。 如第12圖所示,在以封裝樹脂進行封裝前,先將端子 電極39B安裝於焊墊40。在安裝時,事先在焊墊4〇塗抹 焊錫等焊材46 ’再將端子電極39B置於其上進行加熱,此 時因焊材46的熔解而使端子電極39B安裝於焊墊4〇上。 苐2圖所示的混合積體電路,為提供使用者將其組裝 於用於電子機器等的印刷配線基板5G利。為此必須將混 合積體電路的外部電極44置於印刷配線基板Μ的印刷配 線上以進行加熱。由於外部電極44係由焊錫等焊材所形 肖材θ料,而使混合積體電路得以安裝於印刷 配線51。 導電配線層36 Μ由第丨〜1呀,熱會從第 使安裝端子電電配線層35傳達至焊墊4〇。 :^ a所J與嬋墊4〇的焊材“炫解,以致會 士苐22圖所不烊塾4()間發生短路㈣題 施型態中,因焊墊-疋’在本 空間部47,故流出❹ 外覆層樹脂38所包圍 ^ 出的十材46會流入空間部47而得以狀 焊墊40間發生短路。 丨47而侍以防, 第13圖為說明士 ^ 焉轭型怨之混合積體電路其他實施 315544 12 1232074 例之平面圖。 在第1導電配線層35,設有焊墊40,此係與第11圖 以及第12圖相同。但,形成於焊墊4 〇間,用以溢入焊材 46的空間部47,則設置有延伸至較安裝於焊墊4〇的晶片 元件37B側面更外側的延伸部48。此外,與前述相同空間 部47的周圍,係被塗抹於第1導電配線層35表面的外覆 層樹脂3 8所包圍。 空間部47,與前述相同其長度為〇16cm,但其擁有較 焊墊40犬出〇15cm的延伸部48。此外,空間部的長 度雖為0.1〇cm,但與前述相同其設有較焊墊4〇向外侧突 出〇.i5Cm的延伸部48。該空間部47的長度以及延伸部48 的長度會隨安裝晶片元件所不同。 將混合積體電路的外部電極4 4接合於配設於印刷配 冰基板5G的印刷g己線5 i後,進行加熱。藉由加熱由焊材 形成的外部電極44會料,混合積體f路便可安裝於焊墊 如刖述熱會從第2導電配線層36經由第1導電配線層 傳達至焊塾40。而使安襄端子電極39b與焊塾利的 材46溶解,以致導致惶轨 导致烊墊40間可能會發生短路。但, 本實施型態中,因在煜執 墊4〇間設置有由外覆層樹脂3 8 包圍的空間部4 7,因此、、益、、去山 〇。 益,爪出的焊材46會流往該空間部 流進空間部47的焊姑μ a 1 m t 坪材46,會由位於較晶片元件 側面更外側之延伸部48 ^ ^ ^ ^ ^ 一助J:干劑一起被清洗去除。 315544 13 1232074 不會發生流出的焊材46造成焊墊4〇間短路的問題。而且 藉由去除助焊劑可使晶片元件37B更穩固地安裝於焊塾 1 4圖為表示本實施型能 十貝w i忽之汁匕合積體電路其他實施 的剖面圖。與第12圖不同虛為、、/7古/ 口个U慝马,又有形成空間部,而在 40間設置底部填縫樹脂55 如第2圖所示,使混合積體電路的外部電極44接人於 配設於印刷電路基板5G的印職線後,進行加熱。藉:加 熱由焊材形成的外部電極44會溶解,混合積體電路即可安 裝於印刷配線5 1。 如前所述,熱會從第2導電配線層36經由帛ι導電配 線層35傳達至焊墊4G。而使安裝端子電極柳與焊塾利 的焊材46熔解,以致焊墊4〇間可能會發生短路。作,在 本實施型態中,因焊墊4〇間設有底部填縫樹脂Μ,故流 出的焊材46A會被底部填縫樹脂55所阻擋,而不會產^ 焊墊40間的短路問題。 θ 第I5圖為表示本實施型態之混合積體電路其他實施 例的剖面圖。用以將端子電極39Β安裝於焊墊4〇的焊材 46Α,係使用較形成外部電極44之焊材溶點更高的焊材。 實際上,舉例來說,可使用由5%的錫(Sn),95%的錯㈣ 所組成的,熔點為3〇(TC的高熔點焊材。另一方面,形成 外部電極44的焊材’則可使用由3%的Sn,〇.5%的岣, 96 · 5 %的Pb所組成的,炼點為23 8 °C的焊材。 如第2圖所示,為將混合積體電路的外部電極44接合 315544 14 1232074 於配°又於印刷配線基板5 0的印刷配線必須進行加熱。當以 238度以上的溫度進行加熱時,形成外部電極44的焊材會 熔解,混合積體電路即可安裝於印刷配線5丨。此外,熱會 攸第2導電配線層36經由第1導電配線層35傳達至焊墊 40。此外’當對端子電極卿與焊塾4〇進行加熱時,焊 材似會溶解,而可能導致焊墊4G間發生短路的問題。 但,安裳焊塾40與晶片元件39B的高溶點焊材46B未到 炼點故不會溶解。 以使外部電極44安裝於印刷配線基板50的印刷配 線5 1所進行之加熱的熱纟,會從第2導電配線層%經由 第m線層35傳達至焊墊4G。而且,該熱度會傳達 至端子電極39B’鑛覆於端子電極携上的^會溶解。 ^此溶解的Sn熔人高㈣焊材似_,會降低高炼點焊 的熔點。因此,會有高溶點焊材似的溶 熔出的問題。 * 在本實施型態中,孫U 。 係以不έ Sn的鍍金或是鍍銅來形 成日日片7L件37的端子電極1 , + B。如此一來,用以使外部電 極44安裝於印刷配線基柘 μ板5G的印刷配線51所進行之加熱 的熱度,雖會從第2#雷献# s ,,^ 電配線層36經由第1導電配線層 35傳達至焊墊40,但由於pi% 一 一於鳊子電極39B的鍍覆中沒有含 n。因此H點焊材46㈣點不會降低。 第16圖以及第17圖為矣一丄— 败ία— α為表不本實施型態之混合積體電 路其他貫施例的剖面圖。 在本實施例中,係使用暮雷 尤用V電性接合劑56例如:Ag膏, 315544 15 1232074 來使晶片元件37B的端子 ^ 電極3 9接合於焊墊4 〇。但,者 V電性接合劑5 ό的量太多丨合 一 δ 路。另外用以將外部電極 』扪短 4女凌於印刷配線5丨時 之加熱的熱度,會從第2 斤進仃 a,c & 等電配線層3 6經過第1導電s綠 層35傳達至焊墊40,受埶霧 -己線 1々 熱之V電性接合劑56會產生桩人 力降低的問題。 《 i生接合 因此在本實施型能φ 总士 中係在導電性接合劑56間配置絕 卓。冑57 °此外,該絕緣性接合劑57,係以其上面會 :4接合劑56更高之方式配置。因此,為使晶片元件 37B的端子電極39接合於焊塾4〇,當放置晶片元件仰 時’百先,使絕緣性接合劑57與晶片元件37 此山外,晶片元件37B往下壓時會使導電性=劑 %與端子電極3 9B接觸,而端子電極39B與焊墊4〇會進 ―妾ό此時,導電性接合劑5 6雖會被壓寬,但因絕緣性 接合劑57已先接觸晶片元件37Β,故導電性接合劑56不 會使焊墊40間產生短路。 此外’用以將外部電極44安裝於印刷配線5 1時所進 行之加熱的熱度,會從第2導電配線層36經過第1導電配 線層35傳達至焊墊4〇。但,由於晶片元件37β係藉由絕 緣性接合劑57而與外覆層樹脂38相黏接,因此即使導電 性接合劑56的接合力降低也不會造成任何影響。 [發明之效果] 本發明之混合積體電路,係在形成導電配線層的焊墊 間設置由樹脂所環繞之空間部。此外,用以將該混合積體 315544 16 1232074 電路的外部電極安裝於印刷基板之熱,會傳達至悍墊。此 時’固疋晶片元件的端子電極與焊墊的焊材即使熔化流 出,亦會流往該空間部,而得以防止焊材造成焊墊間的短 路0 此外,本發明之混合積體電路,係在形成於導電配線 層之焊墊間配設絕緣性樹脂。此外,與前述相同,用以將 混合積體電路的外部電極安裝於印刷基板之熱會傳達至焊 墊。此時,m定晶片元件的端子電極與焊墊的焊材即使炼 化流出,亦會被該絕緣性樹脂所阻擋,而得以防止焊材造 成焊塾間的短路。 此外,本發明之混合積體電路,係使用較使外部電極 固定於印刷配線之焊材更高㈣的焊材,來固定晶片元件 的端子電極與焊塾。此外,由於晶片元件的端子電極中係 使用不含錫的鑛覆,因此即使熱傳導至端子電極,鑛覆產 生融化,亦不會降低高熔點焊材的熔點。 此外’本發明之混合積體電路,係使用導電性接合劑 將晶片元件的端子電極安裝於焊墊上。此外,由於在上述 之焊墊間配設有絕緣性接合劑’因此即使因導電性接合劑 的量過多而導致溢流,也會被絕緣性接合劑所阻擋,而得 以阻止焊㈣產生短路。此外,_以將外部電極安装於 印刷基板之熱,導致導電性接合劑的接合力產生劣化時 也會因絕緣性接合劑的接合力而得以俘 、’ 接合力。 保持…件本身的 【圖式簡單說明】 17 χ232〇74 $ 1圖為本發明之混合積體電路的平面圖 第2圖為本發明之混合積體電路的剖面圖 第 面圖 圖為說明本發明之混合積體電路的製造方法之剖 面圖 第 4 、 ' 圖為說明本發明之混合積體電路的製遠方法之剖 第 面圖 圖為說明本發明之混合積體電路的製造方法之剖 面圖 當 、 6圖為說明本發明之混合積體電路的製邊方法之剖 第 面圖 第 面圖 圖為說明本發明之混合積體電路的製遠方去之剖 圖為說明本發明之混合積體電路的製邊方法之剖 面圖 圖為說明本發明之混合積體電路的製造方法之剖 第1 0 剖面圖 圖為說明本發明之混合積體電路的製造方法之 第11 平面圖 圖為顯 示本發明之混合積體電路的重要部分 之 第12 剖面圖 圖為顯 示本發明之混合積體電路的重要部分 之 第13 剖面g 图為顯示本發明之混合積體電路的重要部八 之 18 l232〇74 第1 4圖為顯示本發 剑务圖。 明之混合積體電路的重要部分 之 、第15圖為顯示本發明之混合積體電路的重要部分 圖 之 之 、第16圖為顯示本發明之混合積體電路的重要部分 立 第1 7圖為顯示本發明之混合積體電路的重要部八 例兩一 口丨刀 圖。 之 第1 8圖為顯示先行之混合積體電路之剖面圖。 第19圖為顯示先行之混合積體電路之平面圖。 第20圖為先行之混合積體電路的剖面圖,莖 為鈕 弟20圖(A) ’示製造過程之剖面圖,第20圖(B)為製造完 立 圖。 70风之剖面 面圖 第2 1圖為顯示先行之混合積體電路的重要部分之剖 之剖 第22圖為顯示先行之混合積體電路的重要邻八 面圖。 口刀 [&件符號說明] 薄片 35 第1導電配線層 第2導電配線層 37A 半導體電路元件 晶片元件 38 外覆層樹脂 端子電極 40 焊墊 密封樹脂 44 外部電極 焊材 46A 高熔點焊材 31 3 6 43 315544 19 46 1232074 47 空間部 50 印刷基板 52 鍍覆膜 55 底部填縫樹脂 56 導電性接合劑 57 絕緣性接合劑
20 315544
Claims (1)
- 4 l232〇7 拾 i申請專利範圍·· • 7種混合積體電路,係配置有:兩端形成有端子電極之 p片凡件;對應前述端子電極配設有複數焊墊之導電配 j層,覆盍前述焊墊以外之前述導電配線層的外覆層樹 月曰,以及與前述導電配線層電性連接,且: 外部電極, ㈣下面之 2. 其中,前述晶片元件的端子電極,在利用焊材安裝 J it 4墊間的外覆層樹脂中設有空間部。 :種混合積體電路,係配置有··兩端形成有端子電極之 曰曰片7G件,對應前述端子電極配設有複數焊墊的導 =層;覆蓋前述焊墊以外之前述導電配線層的外覆層樹 及由焊材所構成,使之得以與前述導電配線層電 連接且露出於下面之外部電極, A /、 4述θθ片元件的端子電極,係在以焊材安裝 之則述焊墊間設有絕緣性樹脂。 、 4. 申明專利範圍第2項之混合積體電路,其中,係使用 底部填縫樹脂做為前述焊㈣的絕緣性樹脂。 一種^合積體電路,配置有:兩端形成有端子電極之晶 前述端子電極而配設有複數之焊墊的導電 述焊塾以外之前述導電配線層的外覆層 電 卜材所構成’使之得以與前述導電配線層 電連接且露出於下面之外部電極, 舜而、Λ對則述晶片元件的端子電極進行不含錫的鍍 復,而黏接前述端子電極與焊塾的谭材,係融點高於形 315544 21 1232074 $物外部電極的淳材。 _匕口積體電路’係由:在兩端形成有端子電極的晶 片疋件,對應别述端子電極而設有複數焊塾的導電配線 層;以及覆蓋前述焊墊以外部分之前述導電配線層的外 覆層樹脂所形成, Ρ⑴墊上設置導電性接合劑,並在前述 焊塾間設置絕緣性接合劑,制前述絕緣性接合劑使前 述晶片元件,合於前述外覆層樹脂,並利用前述導 電性接合劑“述晶片元件之端子電極接合於前述焊 塾° 6.如申請專利範圍第5項之混合積體電路,其中 絕 =接二=可較前述導電性接合劑更早接觸前述 日日片疋件主體之向度進行配置。 315544 22
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