TWI222145B - Evaluation method - Google Patents

Evaluation method Download PDF

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Publication number
TWI222145B
TWI222145B TW091119361A TW91119361A TWI222145B TW I222145 B TWI222145 B TW I222145B TW 091119361 A TW091119361 A TW 091119361A TW 91119361 A TW91119361 A TW 91119361A TW I222145 B TWI222145 B TW I222145B
Authority
TW
Taiwan
Prior art keywords
photoresist
pattern
distance
test
patterns
Prior art date
Application number
TW091119361A
Other languages
English (en)
Chinese (zh)
Inventor
Atsumi Yamaguchi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TWI222145B publication Critical patent/TWI222145B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H10P74/00—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW091119361A 2002-01-07 2002-08-27 Evaluation method TWI222145B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002000415A JP2003203841A (ja) 2002-01-07 2002-01-07 評価方法、製造条件補正方法及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TWI222145B true TWI222145B (en) 2004-10-11

Family

ID=19190485

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091119361A TWI222145B (en) 2002-01-07 2002-08-27 Evaluation method

Country Status (4)

Country Link
US (1) US6960481B2 (enExample)
JP (1) JP2003203841A (enExample)
KR (1) KR20030060781A (enExample)
TW (1) TWI222145B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1273973A1 (en) * 2001-07-03 2003-01-08 Infineon Technologies SC300 GmbH & Co. KG Method for adjusting a temperature in a resist process
TW574744B (en) * 2002-12-27 2004-02-01 Nanya Technology Corp Misalignment test structure and method thereof
US7119893B2 (en) * 2003-04-10 2006-10-10 Accent Optical Technologies, Inc. Determination of center of focus by parameter variability analysis
US7018855B2 (en) * 2003-12-24 2006-03-28 Lam Research Corporation Process controls for improved wafer uniformity using integrated or standalone metrology
JP2005236062A (ja) * 2004-02-20 2005-09-02 Nec Electronics Corp 不揮発性半導体記憶装置の製造方法
US7541121B2 (en) * 2004-10-13 2009-06-02 Infineon Technologies Ag Calibration of optical line shortening measurements
US20060114478A1 (en) * 2004-11-26 2006-06-01 Applied Materials, Inc. Evaluating effects of tilt angle in ion implantation
KR100678464B1 (ko) 2004-12-30 2007-02-02 삼성전자주식회사 최적의 리소그라피 공정 파라미터들을 자동으로 검출하는장치들 및 이를 사용하여 최적의 리소그라피 공정파라미터들을 자동으로 검출하는 방법들
US7378289B1 (en) * 2005-04-05 2008-05-27 Integrated Device Technology, Inc. Method for forming photomask having test patterns in blading areas
US8034401B2 (en) * 2005-06-22 2011-10-11 Canon Kabushiki Kaisha Pattern forming method and pattern forming apparatus
US7913196B2 (en) * 2007-05-23 2011-03-22 United Microelectronics Corp. Method of verifying a layout pattern
US7966583B2 (en) * 2008-07-08 2011-06-21 Synopsys, Inc. Method and apparatus for determining the effect of process variations
JP5151805B2 (ja) * 2008-08-26 2013-02-27 株式会社島津製作所 Ｘ線検査装置の調整方法
US8945802B2 (en) * 2009-03-03 2015-02-03 Nikon Corporation Flare-measuring mask, flare-measuring method, and exposure method
JP5539097B2 (ja) 2010-08-06 2014-07-02 キヤノン株式会社 評価方法、決定方法及びプログラム
JP2014229802A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、及び物品の製造方法
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774074A (ja) 1993-06-30 1995-03-17 Kawasaki Steel Corp レチクル
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
KR0172801B1 (ko) 1996-06-24 1999-03-20 김주용 공정 마진 테스트용 포토 마스크와 테스트 방법
US6174741B1 (en) * 1997-12-19 2001-01-16 Siemens Aktiengesellschaft Method for quantifying proximity effect by measuring device performance

Also Published As

Publication number Publication date
US20030129509A1 (en) 2003-07-10
US6960481B2 (en) 2005-11-01
KR20030060781A (ko) 2003-07-16
JP2003203841A (ja) 2003-07-18

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