JP2003203841A - 評価方法、製造条件補正方法及び半導体装置の製造方法 - Google Patents

評価方法、製造条件補正方法及び半導体装置の製造方法

Info

Publication number
JP2003203841A
JP2003203841A JP2002000415A JP2002000415A JP2003203841A JP 2003203841 A JP2003203841 A JP 2003203841A JP 2002000415 A JP2002000415 A JP 2002000415A JP 2002000415 A JP2002000415 A JP 2002000415A JP 2003203841 A JP2003203841 A JP 2003203841A
Authority
JP
Japan
Prior art keywords
patterns
photoresist
pattern
distance
evaluation method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002000415A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003203841A5 (enExample
Inventor
Atsumi Yamaguchi
敦美 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002000415A priority Critical patent/JP2003203841A/ja
Priority to TW091119361A priority patent/TWI222145B/zh
Priority to US10/260,277 priority patent/US6960481B2/en
Priority to KR10-2003-0000036A priority patent/KR20030060781A/ko
Publication of JP2003203841A publication Critical patent/JP2003203841A/ja
Publication of JP2003203841A5 publication Critical patent/JP2003203841A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2002000415A 2002-01-07 2002-01-07 評価方法、製造条件補正方法及び半導体装置の製造方法 Pending JP2003203841A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002000415A JP2003203841A (ja) 2002-01-07 2002-01-07 評価方法、製造条件補正方法及び半導体装置の製造方法
TW091119361A TWI222145B (en) 2002-01-07 2002-08-27 Evaluation method
US10/260,277 US6960481B2 (en) 2002-01-07 2002-10-01 Evaluation method
KR10-2003-0000036A KR20030060781A (ko) 2002-01-07 2003-01-02 평가방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002000415A JP2003203841A (ja) 2002-01-07 2002-01-07 評価方法、製造条件補正方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003203841A true JP2003203841A (ja) 2003-07-18
JP2003203841A5 JP2003203841A5 (enExample) 2005-08-04

Family

ID=19190485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002000415A Pending JP2003203841A (ja) 2002-01-07 2002-01-07 評価方法、製造条件補正方法及び半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6960481B2 (enExample)
JP (1) JP2003203841A (enExample)
KR (1) KR20030060781A (enExample)
TW (1) TWI222145B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006523039A (ja) * 2003-04-10 2006-10-05 アクセント オプティカル テクノロジーズ，インク． パラメータ変動性分析による焦点の中心の決定
KR100678464B1 (ko) 2004-12-30 2007-02-02 삼성전자주식회사 최적의 리소그라피 공정 파라미터들을 자동으로 검출하는장치들 및 이를 사용하여 최적의 리소그라피 공정파라미터들을 자동으로 검출하는 방법들
JP2010054201A (ja) * 2008-08-26 2010-03-11 Shimadzu Corp Ｘ線検査装置の評価もしくは調整のためのチャート、およびそのチャートを用いたｘ線検査装置の評価または調整方法
JP2010206199A (ja) * 2009-03-03 2010-09-16 Nikon Corp フレア計測用マスク、フレア計測方法、及び露光方法
JP2011527835A (ja) * 2008-07-08 2011-11-04 シノプシス， インコーポレイテッド プロセス変動の影響を決定するための方法および装置
JP2011228722A (ja) * 2003-12-24 2011-11-10 Lam Research Corporation 統合又は単独計測を用いる改善されたウェーハ均一性のための処理制御方法及び装置
KR101334422B1 (ko) 2010-08-06 2013-11-29 캐논 가부시끼가이샤 평가 방법, 결정 방법 및 저장 매체

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1273973A1 (en) * 2001-07-03 2003-01-08 Infineon Technologies SC300 GmbH & Co. KG Method for adjusting a temperature in a resist process
TW574744B (en) * 2002-12-27 2004-02-01 Nanya Technology Corp Misalignment test structure and method thereof
JP2005236062A (ja) * 2004-02-20 2005-09-02 Nec Electronics Corp 不揮発性半導体記憶装置の製造方法
US7541121B2 (en) * 2004-10-13 2009-06-02 Infineon Technologies Ag Calibration of optical line shortening measurements
US20060114478A1 (en) * 2004-11-26 2006-06-01 Applied Materials, Inc. Evaluating effects of tilt angle in ion implantation
US7378289B1 (en) * 2005-04-05 2008-05-27 Integrated Device Technology, Inc. Method for forming photomask having test patterns in blading areas
US8034401B2 (en) * 2005-06-22 2011-10-11 Canon Kabushiki Kaisha Pattern forming method and pattern forming apparatus
US7913196B2 (en) * 2007-05-23 2011-03-22 United Microelectronics Corp. Method of verifying a layout pattern
JP2014229802A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、及び物品の製造方法
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774074A (ja) 1993-06-30 1995-03-17 Kawasaki Steel Corp レチクル
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
KR0172801B1 (ko) 1996-06-24 1999-03-20 김주용 공정 마진 테스트용 포토 마스크와 테스트 방법
US6174741B1 (en) * 1997-12-19 2001-01-16 Siemens Aktiengesellschaft Method for quantifying proximity effect by measuring device performance

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006523039A (ja) * 2003-04-10 2006-10-05 アクセント オプティカル テクノロジーズ，インク． パラメータ変動性分析による焦点の中心の決定
JP2011228722A (ja) * 2003-12-24 2011-11-10 Lam Research Corporation 統合又は単独計測を用いる改善されたウェーハ均一性のための処理制御方法及び装置
KR100678464B1 (ko) 2004-12-30 2007-02-02 삼성전자주식회사 최적의 리소그라피 공정 파라미터들을 자동으로 검출하는장치들 및 이를 사용하여 최적의 리소그라피 공정파라미터들을 자동으로 검출하는 방법들
JP2011527835A (ja) * 2008-07-08 2011-11-04 シノプシス， インコーポレイテッド プロセス変動の影響を決定するための方法および装置
JP2010054201A (ja) * 2008-08-26 2010-03-11 Shimadzu Corp Ｘ線検査装置の評価もしくは調整のためのチャート、およびそのチャートを用いたｘ線検査装置の評価または調整方法
JP2010206199A (ja) * 2009-03-03 2010-09-16 Nikon Corp フレア計測用マスク、フレア計測方法、及び露光方法
KR20180125045A (ko) * 2009-03-03 2018-11-21 가부시키가이샤 니콘 플레어 계측용 마스크, 플레어 계측 방법, 및 노광 방법
KR102083158B1 (ko) 2009-03-03 2020-03-02 가부시키가이샤 니콘 플레어 계측용 마스크, 플레어 계측 방법, 및 노광 방법
KR101334422B1 (ko) 2010-08-06 2013-11-29 캐논 가부시끼가이샤 평가 방법, 결정 방법 및 저장 매체

Also Published As

Publication number Publication date
US6960481B2 (en) 2005-11-01
TWI222145B (en) 2004-10-11
US20030129509A1 (en) 2003-07-10
KR20030060781A (ko) 2003-07-16

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