TW593152B - Sodium copper titanate compositions containing a rare earth, yttrium or bismuth - Google Patents
Sodium copper titanate compositions containing a rare earth, yttrium or bismuth Download PDFInfo
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- TW593152B TW593152B TW091123427A TW91123427A TW593152B TW 593152 B TW593152 B TW 593152B TW 091123427 A TW091123427 A TW 091123427A TW 91123427 A TW91123427 A TW 91123427A TW 593152 B TW593152 B TW 593152B
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- 239000000203 mixture Substances 0.000 title claims abstract description 45
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 14
- 229910052727 yttrium Inorganic materials 0.000 title claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 title claims description 3
- 150000002910 rare earth metals Chemical class 0.000 title claims description 3
- ZIALXKMBHWELGF-UHFFFAOYSA-N [Na].[Cu] Chemical compound [Na].[Cu] ZIALXKMBHWELGF-UHFFFAOYSA-N 0.000 title claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title claims 2
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 8
- 239000003989 dielectric material Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 241001620634 Roger Species 0.000 claims 1
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000003550 marker Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 230000001502 supplementing effect Effects 0.000 claims 1
- 238000001354 calcination Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000007858 starting material Substances 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical group [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910013830 M2O3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
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- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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Description
593152 A7 B7 五、發明説明(i ) 本申請案主張10/12/2001申請之美國臨時申請案第60/328,758 號之效益。 發明領域 本發明係關於一種式NawMwCusTUC^之新穎組合物,其中 Μ為La-Lu、Y、Bi或其混合物。 發明背景 使用介電材料以增加電容量為習知且長期使用。已知之 電容器介電質分為二類。其一類為介電常數為溫度相對相 關之介電質,但其介電常數值低,例如5-10。如電陶瓷及雲 母即屬此類。另一類介電質之介電常數極高,例如1000或更 高,但其與頻率無關。其一實例為鈦酸鋇(BaTi03)。 因電容量與介電常數成正比,因此需要高介電常數之材 料。為使之在電子電路上可接受,因此介電質之介電常數需 呈現最小之頻率關聯性。其損耗或消耗因子亦期望儘可能 的小。本發明之材料可符合該需求。 發明概要 本發明提供一種式Na〇.5M〇.5Cii3Ti4012i組合物,其中Μ為La-Lu、Y、Bi或其混合物。此等組合物在頻率範圍為1 kHz至1 MHz内具有高介電常數及低損耗,尤其適用於電子裝置中之 電容器時,如相轉移器、匹配網路、共振器、濾波器、共鳴 器、及包括數位間相通天線與三層電容器、共平面導波器及 微窄條。 附圖簡要敘述 圖1顯示實例2、4、6及7之組合物之介電常數與損耗因子之 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
訂
593152 A7 B7 五、發明説明(2 ) 變異。 發明詳細敘述 本發明之組合物(Naa5M〇.5Cu3Ti4012,其中Μ為La-Lu、Y、Bi或 其混合物)具有可對需要頻率關聯性最小之高介電常數及低 損耗之電器裝置提供優點之介電性質。''La-Lu〃定義為原子 數57至71之所有鑭系(稀土族)元素。
本發明之組合物可以下列程序合成。充分混合化學計量 量之起始物質。較佳之起始物質為M2〇3 (M為La-Lu、Y、Bi或 其混合物)、CuO、Ti02及Na2C03。在約900°C下鍛燒起始物質 之混合粉末約12小時。再研磨經鍛燒之粉末,且通過約12.7 毫米直徑/1-2毫米厚之盤狀物。在約950°C下於空氣中燒結盤 狀物24小時。鍛燒及燒結步騾中,由室溫(亦即約20-25°C)至 鍛燒或燒結溫度之溫度上升速率約為200°C/小時。自鍛燒或 燒結溫度至室溫之溫度下降速率約150°C/小時。 本發明之所有Na〇.5MG.5Cu3Ti4012相均以正方形鈣鈦礦相關之 結構結晶。 介電之測量可在盤狀樣品上進行。盤狀樣品之面以細粒 砂或砂紙拋光。在盤面上塗佈銀漆電極,且在約70-100°C下 烘乾。電容器及介電損耗之測量可以二封端法,使用Hewlett-Packard 4275A及4284A LCR橋,在溫度約25°C,頻率約1 kHz至 約1 MHz之範圍内進行。直接自橋接處讀取電容量(C)及損耗 因子。介電常數(K)係由測量之電容量(C)(微微法拉),以關 係式K = (100* C* t)/(8.854* A)計算,其中t為盤狀樣品之厚度 (公分),A為電極之面積(cm2),且*表示相乘。 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593152 A7 B7 五、發明説明( 本發明有利之效果係藉由一系列實例證明,如下所述。以 實例為準之本發明具體例僅為說明用,並非用於限制本發 明之範圍。 實例1-7
實例1-7之組合物Naa5Ma5Cu3Ti4012 (其中Μ分別為La、Sm、Gd 、Dy、Yb、Bi及Y)係使用下歹J程序製備。針對各實例,係依 據化學計量比稱重適量之起始氧化物Na2C03、M2〇3、Cu〇及 Ti〇2,且在瑪瑙研缽中充分混合。所用起始物質之公克量列 於表1中。 表1 實例 組合物 Na2C03 NI2O3 CuO Ti02 1 Na〇5La〇5Cu3Ti4〇i2 0.0647 0.1989 (La2〇3) 0.5828 0.7803 2 Na〇 5Sm〇 5CU3T14O12 0.0641 0.2110 (Sm203) 0.5777 0.7736 3 Na〇 5Gd〇5Cu3Ti4〇i2 0.0638 0.2182 (Gd203) 0.5747 0.7696 4 Na〇.5Dy〇.5Cu3Ti4012 0.0635 0.2237 (Dy203) 0.5725 0.7665 5 Na〇5Yb〇5Cu3Ti4012 0.0630 0.2345 (Yb2〇3) 0.5680 0.7605 6 Na〇5Bi〇5Cu3Ti4〇i2 0.0614 0.2700 (Bi2〇3) 0.5532 0.7407 7 Na0.5Y05Cu3Ti4O12 0.0672 0.1433 (Y2O3) 0.6059 0.8113 各實例中,混合之粉末在約900°C下鍛燒12小時。再研磨經 裝
鍛燒之粉末,且壓著成12.7毫米直徑/1-2毫米厚之盤狀物。該 盤狀物於空氣中,約950°C下燒結24小時。鍛燒及燒結步騾中 ,由室溫至鍛燒或燒結溫度之溫度上升速率約為200°C/小時 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593152 A7 B7 五、發明説明( 。自鍛燒或燒結溫度至室溫之溫度下降速率約150°C/小時。 以Siemens D5000繞射儀紀錄X-射線粉末繞射圖案。數據顯 示所有樣品均以正方形鈣鈦礦有關之結構結晶。測量之 晶格參數列於表2中。 表2 實例 組合物 晶格參數 (nm) 介電常數 (105 Hz) @298K 介電損耗, tanD(105Hz) (¾ 298 K 1 Na〇 5La〇 5Cu3Ti4〇i2 0.7420 (1) 3560 0.074 2 Na〇 5Sm〇 5CU3T14O12 0.7395 (1) 2263 0.047 3 Na〇 5Gd〇5Cu3Ti4〇i2 0.7388 (1) 2645 0.054 4 Na〇 5Dy0 5Cu3Ti4〇12 0.7379 (1) 2049 0.035 5 Na〇5Yb〇5Cu3Ti4〇i2 0.7361 (1) 2048 0.059 6 Na〇5Bi〇5Cu3Ti4〇i2 0.7412 (1) 2952 0.065 7 Na〇>5Y〇5Cu3Ti4〇12 0.7385 (1) 2375 0.048 盤狀樣品經拋光製成平板狀均勻之表面,且以銀漆電極
裝
化。上漆之樣品在約70-100°C下烘乾隔夜。電容量及損耗之 正切測量係在室溫下,使用HP-4284A LCR計,在頻率1 kHz至1 MHz内進行。在溫度約25°C (298 K)及頻率約105 Hz下測量之介 電常數及損耗數據列於表2中。介電常數高,且損耗因子低 。針對實例2、4、6及7之介電常數及損耗因子在約103 Hz至約 106 Hz頻率範圍内之變化示於圖1中。介電常數及損耗因子在 3倍數量級之頻率變化下具有最小之頻率依存性。 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
- ABC D 593152 々、申請專利範圍 、Dy、Yb、Y或 Bi。 16. 如申請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cu3Ti4〇12i組合物所組成,其中Μ為La。 17. 如申請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cu3Ti4012i組合物所組成,其中Μ為Sm。 18. 如申請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cu3Ti4012i組合物所組成,其中Μ為Gd。 19. 如申請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cu3Ti4012i組合物所組成,其中Μ為Dy。 20. 如申請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cu3Ti4012i組合物所組成,其中Μ為Yb。 21. 如申請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cu3Ti4012i组合物所組成,其中Μ為Y。 22. 如中請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cu3Ti4012i組合物所組成,其中Μ為Bi。 -2- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)——— A- 申請E —乳位〜 案 號 091123427 類 別 COiPn/OiYCoi^iVftCf II專 發明 新型石辑 中 文 ,正 補充 A4 C4 中文說明書替換本(92年10月) 利説明書 5州52 含有稀土族、釔或鉍之鈦酸銅鈉組合物 英 文 SODIUM COPPER TITANATE COMPOSITIONS CONTAINING A RARE EARTH, YTTRIUM OR BISMUTH 姓 名 國 籍 慕尼帕蘭A.蘇布拉瑪尼安 munirpallam a. subramanian 美國U.S.A. -、發明 +創作 人 住、居所 裝 美國賓州肯尼特廣場市普拉特路20號 20 PRATT LANE, KENNETT SQUARE, PENNSYLVANIA 19348, U.S.A. 訂 姓 名 (名稱) 美商杜邦股份有限公司 E. I. DU PONT DE NEMOURS AND COMPANY 線 國 籍 申請人 住、居所 (事務所) 代表人 姓 名 美國U.S.A. 美國德來懷州威明頓市馬卡第街1007號 1007 MARKET STREET, WILMINGTON, DELAWARE 19898, U.S.A. 羅傑鮑曼 ROGER A. BOWMAN 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593152A8 B8 C8 D8,修正丨 補尤 1. 一種式 Na〇.5M〇.5Cu3Ti4012i 組合物,其中 M為 La-Lu、Y、Bi或 其混合物。 2. 一種式 Na〇.5M〇.5Cu3Ti4012i 組合物,其中 Μ為 La-Lu。 3. 一種式 Naa5M〇.5Cu3Ti4012i 組合物,其中 Μ為 Y。 4. 一種式 Na0.5Ma5Cu3Ti4O12i 組合物,其中 Μ為 Bi。 5. 如申請專利範圍第1項之組合物,其中之Μ為La、Sm、Gd 、Dy、Yb、Y或 Bi 〇 6. 如申請專利範圍第1項之組合物,其中之M為La。 7. 如申請專利範圍第1項之組合物,其中之Μ為Sm。 8. 如申請專利範圍第1項之組合物,其中之Μ為Gd。 9. 如申請專利範圍第1項之組合物,其中之Μ為Dy。 10. 如申請專利範圍第1項之組合物,其中之Μ為Yb。 11. 一種提供介電質之方法,其包括提供式Na〇.5M〇.5Cu3Ti4012 之組合物,其中Μ為La-Lu、Y、Bi或其混合物,及製造該 組合物作為介電質。 12. 如申請專利範圍第11項之方法,其中Μ為Y或Bi。 13. —種電子裝置,其含有具介電材料之電容器,其中該介 電材料由式灿〇.51^.5〇13114012之組合物所組成,其中Μ為La-Lu、Y、Bi或其混合物。 14. 一種電子裝置,其含有具介電材料之電容器,其中該介 電材料由式Na〇.5M〇.5Cu3Ti4〇i2之組合物所組成’其中Μ為La-Lu 〇 15. 如申請專利範圍第13項之電子裝置,其中該介電材料由 式Na〇.5M〇.5Cii3Ti4012i組合物所組成,其中Μ為La、Sm、Gd 本紙張尺度適用中國國家標準(CNS) A4規格(210x 297公釐)
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US20070170910A1 (en) * | 2006-01-26 | 2007-07-26 | Ming-Hoo Chang | Spectral resistor, spectral capacitor, order-infinity resonant tank, EM wave absorbing material, and applications thereof |
US7830644B2 (en) * | 2007-03-05 | 2010-11-09 | Northop Grumman Systems Corporation | High dielectric capacitor materials and method of their production |
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CN101671178B (zh) * | 2009-09-24 | 2012-05-30 | 华中科技大学 | 一种Bi0.5Na0.5Cu3Ti4O12巨介电非线性压敏陶瓷的制备方法 |
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