KR100759683B1 - ＢｉＣｕ3Ｔｉ3ＦｅＯ12를 혼입한 동조식 소자 - Google Patents

ＢｉＣｕ3Ｔｉ3ＦｅＯ12를 혼입한 동조식 소자 Download PDF

Info

Publication number
KR100759683B1
KR100759683B1 KR1020027014590A KR20027014590A KR100759683B1 KR 100759683 B1 KR100759683 B1 KR 100759683B1 KR 1020027014590 A KR1020027014590 A KR 1020027014590A KR 20027014590 A KR20027014590 A KR 20027014590A KR 100759683 B1 KR100759683 B1 KR 100759683B1
Authority
KR
South Korea
Prior art keywords
sub
dielectric
bicu
feo
tuning
Prior art date
Application number
KR1020027014590A
Other languages
English (en)
Other versions
KR20040029943A (ko
Inventor
리동
무니르팔람 아파도르 수브라마니언
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20040029943A publication Critical patent/KR20040029943A/ko
Application granted granted Critical
Publication of KR100759683B1 publication Critical patent/KR100759683B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G49/00—Compounds of iron
    • C01G49/009—Compounds containing, besides iron, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C04B35/2666—Other ferrites containing nickel, copper or cobalt
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3272—Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/761—Unit-cell parameters, e.g. lattice constants
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/762—Cubic symmetry, e.g. beta-SiC
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/768—Perovskite structure ABO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Amplifiers (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 신규한 유전체 BiCu3Ti3FeO12를 제공한다. BiCu3Ti 3FeO12는 10 kHz 내지 10 MHz의 주파수 범위에 걸쳐 양호한 유전체 동조능 및 낮은 손실을 제공하고, 교차지 및 3층 축전기, 공면 도파로, 및 마이크로스트립을 포함하는, 위상 천이기, 정합 회로망, 발진기, 필터, 공진기 및 안테나와 같은 동조식 소자에 특히 유용하다.
공진기, 유전체, 동조능

Description

ＢｉＣｕ3Ｔｉ3ＦｅＯ12를 혼입한 동조식 소자 {Tunable Devices Incorporating BiCu3Ti3FeO12}
본 발명은 유전체 BiCu3Ti3FeO12를 혼입한 동조식(tunable) 소자를 제공한다.
축전용량을 증가시키는 데 유전체 재료를 사용하는 것은 잘 알려져 있고, 오랜기간 동안 이용되어 왔다. 초기의 축전기 유전체는 2개의 범주로 나누어졌다. 유전체의 제1 범주는 온도로부터 비교적 독립적인 유전 상수를 가지지만, 이 유전 상수의 값이 예를 들면 5 내지 10으로 낮다. 전기 자기(瓷器) 및 운모와 같은 재료가 이 범주에 속한다. 유전체의 제2 범주는, 예를 들면 1000 이상의 매우 높은 유전 상수를 갖지만, 매우 온도 의존적이다. 그 예로는 바륨 티타네이트 BaTiO3이 있다.
유전체 재료의 축전용량이 그의 유전 상수에 비례하기 때문에, 고 유전 상수 재료가 바람직하다. 동조(tuning) 또는 공진(resonance) 회로에 허용되기 위해서는, 유전체는 최소의 온도 의존성을 나타내는 유전 상수를 가져야 하는데, 만약 그렇지 않으면 주변 온도의 적은 변화에도 회로가 공진되지 않을 것이다. 다른 응용분야는 최소 주파수 의존성을 나타내는 유전 상수를 요한다. 또한, 가능한 적은 손실 또는 소산(消散) 인자를 가지는 것이 바람직하다.
많은 마이크로파 소자의 경우, 중요한 재료 특징으로는 유전체 동조능(tunability), 즉 전압이 인가될 때의 유전 상수의 변화 및 낮은 유전 손실이 있다. 바륨 스트론튬 티타네이트 Ba1-xSrxTiO3은 일부 이와 같은 용도로 사용된 바 있지만, 보다 나은 특성을 가진 재료에 대한 요구가 여전히 존재한다.
얀드로프스키(Yandrofski) 등의 US 5,472,935는 동조가능한 강유전체를 혼입한 동조식 마이크로파 및 밀리미터파 소자를 개시하고 있다.
<발명의 요약>
본 발명은 신규한 유전체 BiCu3Ti3FeO12를 제공한다.
BiCu3Ti3FeO12는 10 kHz 내지 10 MHz의 주파수 범위에 걸쳐 양호한 유전체 동조능 및 낮은 손실을 제공하고, 교차지(interdigital) 및 3층(trilayer) 축전기, 공면 도파로, 및 마이크로스트립(microstrip)을 포함하는, 위상 천이기, 정합 회로망, 발진기, 필터, 공진기 및 안테나와 같은 동조식 소자에 특히 유용하다.
BiCu3Ti3FeO12는 높은 유전 상수를 필요로하는 소자 뿐만 아니라 동조식 소자에 이점을 제공하는 유전체 특성을 가진다.
BiCu3Ti3FeO12는 하기 방법에 의해 합성될 수 있다. 화학량론적 양의 전구체를 완전히 혼합한다. 전구체 Bi203, CuO, Ti02 및 Fe203 이 바람직하다. 혼합된 전 구체 분말을 약 900 ℃에서 약 12 시간 동안 하소한다. 하소된 분말을 재분쇄하고, 직경 12.7 mm/두께 1 내지 2 mm의 디스크로 압착한다. 이 디스크를 약 975 ℃에서 24 시간 동안 공기 중에서 소결시킨다. 하소와 소결 단계 모두에서, 승온 구배 속도는 실온(즉, 약 20 ℃)으로부터 하소 또는 소결 온도까지 약 200 ℃/시간이고, 냉각 속도는 하소 또는 소결 온도로부터 실온(즉, 약 20 ℃)까지 약 150 ℃/시간이다.
BiCu3Ti3FeO12는 입방식 페로브스카이트(perovskite) Im3 구조로 결정화된다.
유전체 측정은 디스크 샘플 상에서 수행하였다. 디스크 형 샘플의 표면을 미세한 연마재 모래 또는 금강사(金剛砂) 종이로 연마하였다. 은 도료 전극제를 표면에 도포하고, 70 내지 100 ℃에서 건조시켰다. 축전용량 및 유전 손실을 25 ℃에서 1 kHz 내지 1 MHz의 주파수 범위에 걸쳐 휴렛-패커드(Hewlett-Packard) 4275A 및 4284A LCR 브리쥐(bridge)를 사용하는 2단자 방법으로 측정하고, 축전용량 C 및 소산 인자를 상기 브리쥐로부터 직접 판독하였다. 유전 상수 (K)를 측정된 축전용량 C로부터 관계식 K = (100 ℃ t)/ (8.854 A) (식 중, t는 디스크 형 샘플의 두께(cm)이고, A는 전극의 면적(㎠)임)을 이용하여 피코패럿으로 계산하였다. 디스크의 편평한 전극 표면을 통해 전압을 인가하고, 동조능을 인가된 전압과 관련된 유전 상수의 변화를 측정하여 계산하였다. 동조능 T를 방정식 T = [K(0)-K(V)]/K(0)] (식 중, K(0)는 인가된 전압이 없는 경우의 유전 상수이고, K(V)는 인가된 전압 V가 있는 경우의 유전 상수임)로부터 계산하였다. 동조능을 주어진 인 가된 전기장에 대한 백분율로서 일반적으로 나타내어 T에 대한 상기 결과에 100을 곱하거나, 또는 T = (상수)E (식 중, T는 동조능 (%)이고, E는 전기장이고, 상수는 특정 재료에 대한 대수 지표이다)로 기재한다.
BiCu3Ti3FeO12를 하기 방법으로 제조하였다. 출발 산화물 Bi20 3, CuO, TiO2 및 Fe203의 적절한 양을 화학량론 비에 따라 칭량하고, 아게이트 모르타르(agate mortar)중에서 완전히 혼합하였다. 사용되는 전구체량(g)을 하기 표 1에 나타낸다. 혼합된 분말을 900 ℃에서 12 시간 동안 하소하였다. 하소된 분말을 재분쇄하고, 직경 12.7 mm/두께 1 내지 2 mm의 디스크로 압착하였다. 이 디스크를 975 ℃에서 24 시간 동안 공기 중에서 소결시켰다. 하소 및 소결 단계 모두에서, 온도를 실온(즉, 약 20 ℃)으로부터 하소 또는 소결 온도까지 200 ℃/시간의 속도로 상승시키고, 온도를 하소 또는 소결 온도로부터 실온(즉, 약 20 ℃)으로 150 ℃/시간의 속도로 감소시켰다.
X선 분말 회절 패턴을 지멘스(Siemens) D5000 회절기로 기록하였다. 이 데이타는 BiCu3Ti3FeO12가 입방식 페로브스카이트 관련 Im3 구조로 결정화되었음을 보여준다. 측정된 격자 매개변수를 하기 표 1에 나타낸다.
Figure 112002035979212-pct00001
디스크 샘플을 연마하여 편평하고 균일한 표면을 만들고, 은 도료로 전극제 처리하였다. 도장된 샘플을 70 내지 100 ℃에서 밤새 건조시켰다. 축전용량 및 손실 탄젠트를 실온(즉, 약 20 ℃)에서 1 kHz 내지 1 MHz의 주파수 범위에 걸쳐 HP-4275A LCR 계량기로 측정하였다. 결과를 하기 표 2에 나타낸다.
Figure 112002035979212-pct00002
케이트레이(Keithley) 228A 전압/전류 원을 사용하여 100V 이하의 전압을 디스크의 편평한 전극 표면을 통해 인가하고, 유전 상수를 인가된 전압의 함수로서 실온에서 HP-4275A LCR 계량기를 사용하여 측정하였다. 10 kHz 내지 10 MHz의 주파수 범위에 걸친, 동조능 (%) 및 이 크기의 동조능을 얻는 데 인가된 전기장을 하기 표 3에 나타낸다. 또한, T = (상수)E로 기재되는 동조능 방정식을 하기 표 3에 나타낸다. 이 방정식은 전체 주파수 범위에 걸쳐 유효하다.
Figure 112002035979212-pct00003
결과는 BiCu3Ti3FeO12가 10 kHz 내지 10 MHz에서 주파수와 독립적인, 비교적 높은 동조능을 가진다는 것을 보여준다.

Claims (2)

  1. 삭제
  2. 화학식 BiCu3Ti3FeO12의 강유전성 조성물을 포함하는 동조식(tunable) 전기 소자.
KR1020027014590A 2000-05-04 2001-05-03 ＢｉＣｕ3Ｔｉ3ＦｅＯ12를 혼입한 동조식 소자 KR100759683B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20180900P 2000-05-04 2000-05-04
US60/201,809 2000-05-04

Publications (2)

Publication Number Publication Date
KR20040029943A KR20040029943A (ko) 2004-04-08
KR100759683B1 true KR100759683B1 (ko) 2007-09-17

Family

ID=22747391

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027014590A KR100759683B1 (ko) 2000-05-04 2001-05-03 ＢｉＣｕ3Ｔｉ3ＦｅＯ12를 혼입한 동조식 소자

Country Status (9)

Country Link
US (1) US6890875B2 (ko)
EP (1) EP1279180B1 (ko)
JP (1) JP2003532979A (ko)
KR (1) KR100759683B1 (ko)
AT (1) ATE312404T1 (ko)
AU (1) AU2001261157A1 (ko)
CA (1) CA2404377A1 (ko)
DE (1) DE60115630T2 (ko)
WO (1) WO2001084561A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100882693B1 (ko) * 2007-09-14 2009-02-06 삼성모바일디스플레이주식회사 발광표시장치 및 그의 제조방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7741396B2 (en) * 2005-11-23 2010-06-22 General Electric Company Composites having tunable dielectric constants, methods of manufacture thereof, and articles comprising the same
US9776916B2 (en) 2014-01-28 2017-10-03 University Of Delaware Processes for depositing nanoparticles upon non-conductive substrates
CN104291805B (zh) * 2014-08-19 2016-07-27 陕西师范大学 一种钛铁铌酸铜铋巨介电陶瓷材料及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472935A (en) * 1992-12-01 1995-12-05 Yandrofski; Robert M. Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472935A (en) * 1992-12-01 1995-12-05 Yandrofski; Robert M. Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J. Solid state chemistry, vol.151, no.2
US-A-5472935

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100882693B1 (ko) * 2007-09-14 2009-02-06 삼성모바일디스플레이주식회사 발광표시장치 및 그의 제조방법

Also Published As

Publication number Publication date
EP1279180B1 (en) 2005-12-07
WO2001084561A3 (en) 2002-05-23
DE60115630T2 (de) 2006-08-17
DE60115630D1 (de) 2006-01-12
US20040119055A1 (en) 2004-06-24
JP2003532979A (ja) 2003-11-05
CA2404377A1 (en) 2001-11-08
KR20040029943A (ko) 2004-04-08
EP1279180A2 (en) 2003-01-29
AU2001261157A1 (en) 2001-11-12
ATE312404T1 (de) 2005-12-15
WO2001084561A2 (en) 2001-11-08
US6890875B2 (en) 2005-05-10

Similar Documents

Publication Publication Date Title
KR100760433B1 (ko) ＣａＣｕ3Ｔｉ4Ｏ12를 혼입한 동조식 소자
US7094721B2 (en) Substituted barium titanate and barium strontium titanate ferroelectric compositions
US6727199B2 (en) Sodium copper titanate compositions containing a rare earth, yttrium or bismuth
US6641940B1 (en) Low loss dielectric materials for microwave applications
US7314842B2 (en) Substituted barium titanate and barium strontium titanate ferroelectric compositions
KR100759683B1 (ko) ＢｉＣｕ3Ｔｉ3ＦｅＯ12를 혼입한 동조식 소자
KR100307886B1 (ko) 고주파용 유전체 조성물
EP1459335B1 (en) Copper tantalate compositions containing trivalent cations
KR960012729B1 (ko) 마이크로파용 유전체 조성물
US20040196619A1 (en) Divalent europium-containing compositions
KR19980082650A (ko) 고주파용 압전 세라믹 조성물
Liu et al. Dielectric properties and relaxation of SrBi2 (Nb0. 25Ta0. 75) 2O9 ceramic at RF frequency
KR20000002598A (ko) 고주파용 유전체 자기 조성물
JPH07235216A (ja) 誘電体磁器組成物及びその製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee