TW584914B - Metal taper etching structure and the manufacturing method thereof, producing source/drain and gate in thin film transistor array using the same, and the structure thereof - Google Patents

Abstract

The present invention discloses a metal taper etching structure and the manufacturing method thereof, and using the method for producing of source/drain and gate in thin film transistor array. The method for metal taper etching includes the following steps: providing a substrate; forming a first metal layer on the substrate composed of columnar crystal growing opposite to the normal direction of the substrate surface; forming a second metal layer on the first metal layer composed of fine grain crystal with arbitrary orientation; forming and defining a cover layer on the second metal layer; and, using an etching process to remove the first metal layer and the second metal layer in the portions not covered by the cover layer, so as to obtain a taper profile.

Description

584914 V. Description of the invention (1) " -----------Technical field to which the invention belongs The present invention relates to a semiconductor device process technology ^ 〇n (^ UCtor —device-process-technology), In particular, you are broader than a metal oblique etching structure and a manufacturing method thereof, and a source / drain and a gate and a structure thereof in a film transistor array by this method. In the prior art, in order to be able to produce sufficient metal interconnects on a limited surface of a wafer and increase the degree of circuit integration, a multi-layer interconnected three-dimensional architecture is currently used to complete the connection of various components. Therefore, a dielectric layer is needed between the conductive layers (metal layers) as a dielectric material to isolate the interconnections of various metals, so as to avoid unintended conduction between components; and to avoid some as wires or electrodes The metal layer (such as aluminum) and the dielectric layer (such as the silicon-containing film layer), due to the temperature of the process, cause the dielectric material to enter the metal layer due to the diffusion effect, resulting in spikes of 〇1 ^ 1 ^) and electromigration (61 ^ 1 ^ 011] 1 lamp with the phenomenon of 011) 'so a barrier layer will be formed on the metal layer 〇 However, when you want to form a barrier layer and a dielectric layer on a patterned metal layer, Please refer to FIG. 1a. If the patterned metal layer 12 has a right angle or an undercut (uner jercut) on the side of the etched channel 20, a barrier layer 14 and a dielectric layer formed thereon 16 often forms an overhang 26 on the side edge of the metal layer 12. If a film layer is successively formed on the dielectric layer 16 and the side walls and bottom of the channel 20, however, as shown in FIG. 1b, the channel The overhang in 20 makes the sputtered secondary film layer M not formed continuously. It is often difficult, especially the step coverage in the depression is the worst, which will

584914 V. Description of the invention (2) Pinholes 24 and shorts will be caused, which will cause the characteristics of the components to be unstable.

In order to solve the above-mentioned problems, avoid that the film layer formed on the side edge of the metal layer has an overhang. 'The patterned metal layer 12 needs to have a channel 20 with a tapered profile 22 after the last name is engraved. Referring to FIG. 2a, in this way, the barrier layer 14 and the dielectric layer 16 successively formed on the metal layer 12 are conformably formed on the metal layer 12 to avoid overhanging, please Refer to Figure 2b. This method of forming a metal layer etching channel with a taper profile is called a metal layer's tapered etching M (taper etching).

Generally, the metal is formed on the substrate by using the method of ore reduction: for example, molybdenum, titanium, or metal complexes. The metal crystal structure will be a columnar crystal structure. Refer to Figure 3a when the cover layer is formed. 30. When the columnar crystal structure metal layer 50 is etched, the columnar crystal structure is a vertical substrate because of its crystal shape direction, and the etching rate of 51 at the grain boundary is greater than the vertical crystal column direction. The etching rate (the vertical engraving rate of the metal layer is much larger than the lateral engraving rate). It is not easy to perform tape etching. The side of the etching channel 40 is usually a vertical side 42 (or close to it). (Vertical), please refer to Figure 3b, which is detrimental to the step coverage of the film layer to be formed next. In the conventional technology, a method for obliquely etching a metal layer is to change the conditions for forming a metal by sputtering as described above, so that the metal layer formed on the substrate is a finely-grained (fi ne gra in) crystal structure with arbitrary orientation. , To replace the columnar (columnar) crystal structure, please refer to Figure 3 (: Figure, when a cover layer 3 is formed.

0632-8948TWF (nl); AU91225; Phoelip.ptd Page 6 584914 V. Description of the invention (3) * ~ * --- 1 · When etching on this fine grain structure metal layer 52, · · The rate of octave lateral etch is not limited by the crystal form, so this fine grain junction r crystal structure metal layer 52 can be etched. The side of the etching channel 45 is usually tilted. = = Side 47 (taper profile), please refer to Figure 3 (1. In this way, although the channel of the metal film layer has an inclined side, but the metal layer is composed of fine crystal grains, the thickness of the film layer has a certain limit, and it is often impossible to reach the system. It has a desired thickness; and a metal layer composed entirely of fine grain crystals tends to have a high degree of stress inside, and this metal film layer is prone to the phenomenon of voids and peeling It is easy to cause problems such as excessive resistance and disconnection. In order to perfect the metal bevel etching technology, it is necessary to seek improvement in the above problems. Summary of the Invention

In view of this, in order to solve the above problems, the main object of the present invention is to provide a metal beveled etching structure, which has a better taper profile structure in the metal layer etching channel, and increases the step coverage of the sub-layer film layer. (Step coverage) ability to reduce component disconnection or increase in impedance ', and it eliminates conventional techniques that are prone to problems such as overhang and high stress. Another object of the present invention is to provide a method for making the above-mentioned metal oblique etching structure ', in order to obtain the above-mentioned etching structure with a preferred metal layer inclined side (t a p r r p o f i 1 e) as described above. Another object of the present invention is to use the above method for bevel etching of metal.

0632-8948TWF (nl); AU91225; Phoelip.ptd page 7 584914

V. Description of the invention (4) Method for manufacturing source / drain and gate in thin-film transistor array busbar 'to obtain thin-film transistor source / drain and gate structure with inclined sides' to simplify thin-film power Crystals are made and avoid bad structure. In order to achieve the above-mentioned object of the present invention, the metal oblique etching structure according to the present invention has a composition including:

A substrate, a first metal layer having a columnar crystal structure that grows in a direction normal to the substrate surface is formed on the substrate; a second metal layer having an arbitrary orientation of fine grain crystals It is formed on the first metal layer, and the edges of the first metal layer and the first metal layer constitute a tapered profile. In order to achieve another object of the present invention, the present invention relates to a method for manufacturing a metal oblique etching structure. The manufacturing method includes at least the following steps: providing a substrate; and forming a substrate having a growth direction normal to the substrate surface on the substrate. A first metal layer composed of columnar crystals; forming a second metal layer composed of fine grain crystals with arbitrary orientation on the first metal layer; forming and defining a mask Cladding on the second metal layer; and removing a portion of the first metal layer and the second metal layer that are not covered by the cover layer by a coining process to obtain a tapered profile.

In order to achieve another object of the present invention, the present invention relates to a method for forming a gate metal electrode having an inclined side structure in a thin-film transistor array. The method includes at least the following steps: providing a substrate; A first gate metal layer composed of columnar crystals grown in the direction of the surface normal on the substrate;

584914

Forming a fine grain crystal with arbitrary orientation on the above first metal layer; forming and defining the electrode metal layer; and wet etching the free electrode metal layer and the second gate metal layer; the present invention also relates to forming a thin film electrical crystal structure The second gate metal layer formed by the method of the source / drain metal electrode is placed on a portion of a cover layer on the portion covered by the second gate cover layer to obtain an inclined side surface. The body array has inclined side knots, and its production includes at least the following steps for a substrate on which one of the gates has been fabricated: one of the gate insulation sounds, and the other is the formation of the poor private hall. The columnar junction Γ metal layer growing in the normal direction of the substrate surface is on the doped stone layer and the openings above, and the first and extreme metal layers of Λ with arbitrary orientation of fine grain crystals are on the first On the source / drain metal layer; shape and meaning-the cover layer is on the second source / drain metal layer; and c the doped silicon layer is an etch stop layer, and the wet etching is not covered by the cover Covered by the layer =: The first source / drain metal layer and the second source / drain metal layer of 卩 乂 are used to serve an inclined side.

The method for forming a source / drain metal electrode with a slanted side structure in a thin film transistor array according to the present invention can also be completed in another form. The method includes at least the following steps: 〃 Provide a substrate on which a gate electrode has been completed Fabrication; a gate insulating layer conformably formed on the above gate; forming and defining a silicon layer on the above part of the gate insulating layer; forming and defining a doped silicon layer on the above silicon layer; forming a Columnar crystals growing in a direction normal to the substrate surface

584914

The first source / drain metal layer formed on the first barrier layer;

If the second source / drain formed by the fine grain crystal of Ren Enzheng is formed on the first source / drain metal layer described above; a second resistance is formed ^ On the source / drain metal layer; forming and defining a mask on the second barrier layer; and using the above-mentioned doped silicon layer as an etching stop layer, and wet-etching a portion not covered by the cap layer A first barrier layer, a first source / drain metal layer, a second source / drain metal layer, and a second layer to obtain an inclined side surface. Yi Yi P early

The structure of the thin film transistor with an inclined side formed by the present invention includes at least: & a substrate having a gate electrode thereon; a gate insulating layer conformably formed on the gate electrode; a patterned A silicon layer is formed on part of the gate insulating layer; a patterned doped silicon layer is formed on the silicon layer; and a first columnar crystal structure having a growth direction that is normal to the substrate surface. The source / drain metal layer is formed on the silicon layer and the gate insulating layer; and a second source / and electrode metal layer composed of fine grain (^ inegra) crystals with arbitrary orientation is formed on Above the first source / dead metal layer, and the edges of the first source / drain metal layer and the second source / drain metal layer are sloped sides (taperpr ofi 1 e).

The feature of the present invention is that the second metal layer composed of fine grain crystals with arbitrary orientation is formed by using the metal oblique-angled-engraved structure according to the present invention to grow in a direction opposite to the normal direction of the base surface. On the first metal layer composed of columnar crystals, when a cover layer is formed and wet etching is performed, the gold due to the first metal layer and the second metal layer is formed.

0632-8948TWF (nl); AU91225; Phoelip.ptd page 10 584914

V. Description of the invention (7) :: Pair: Fine grain crystals, wet-etched 'θ ·; Erzheng grain metal layer is isotropic #% g to the inclined side, and borrow The oblique side is gradually etched by wet etching, in which the columnar layer of the fine-grained crystalline structure metal layer: nar) the crystalline structure metal layer will gradually be exposed, and the wet etching will gradually Erosion at the grain boundary = the effect of isotropic creeping on the metal layer, stunned; 1 The purpose of the inclined side (both the first metal layer and the second metal layer have the same, inclined side). This inclined side surface will increase the coverage of the secondary metal layer, and reduce component disconnection or increase in resistance. Another feature of the company is the columnar (CD1⑽ group) :: Ϊ ίί: metal layer and metal oblique etching structure with a fine grain crystalline structure described in the present invention. After the first metal layer, the above-mentioned process steps for forming the first metal layer can be continued: only two process parameters (such as the heat dissipation rate of the die) of the coating film are needed, and no additional process is required. 'A second metal layer with fine grain crystals can be obtained, followed by metal oblique etching.' Compared with other technical methods of the construction, it can greatly save the time and steps of the process, which will greatly help reduce the cost and improve the yield. In order to make the above-mentioned objects and features of the present invention more comprehensible, preferred embodiments are described below in conjunction with the accompanying drawings, and are described in detail as follows:

0632-8948TWF (nl); AU91225; Phoelip.ptd 丄 4

A preferred embodiment of the present invention will be described. The process of metal bevel etching structure according to the first embodiment will be described in detail in the following. The second one; m: it shows the initial steps of this embodiment. The method of engraving a stone oblique angle in the present invention is applicable to a substrate 100, for example, a substrate with a transistor side in a crystal display, and above it may be only: a semiconductor element #, but to simplify the diagram here, it includes Feng Zhi. In the description of the present invention, the term " substrate " The components formed on the Fengyuan circle and the various flutes on the wafer are formed on the substrate 100 to form a first metal layer 102. What is the problem? The layer 100 can be plated on the substrate 100 by a thermal evaporation method, an electron gun evaporation method, a coin plating method, or a method. Generally, when a metal is formed on a substrate by using a thermal evaporation method, an electron gun plating method, and a sputtering method, the metal 2 f is formed into a columnar structure that grows relative to the normal direction of the substrate surface. . The thickness of the first metal layer may be 50 to 600 angstroms. The material of the first metal layer composed of columnar crystals that grow in a direction normal to the base surface may be selected from chromium (Cr ), Titanium (Ti), aluminum (A1), molybdenum (Mo), button (Ta), and tungsten (W), or free chromium (Cr), titanium (Ti), aluminum (A1), molybdenum (Mo ), Button (Ta) and tungsten (W) in any combination of alloys. mouth. Next, an arbitrary random layer is formed on the first metal layer 102 having the above-mentioned columnar crystals grown in a direction normal to the base surface.

0632-8948TWF (nl); AU91225; Phoelip.ptd Page 12 584914

V. Description of the invention (9) A second metal layer composed of fine crystal grains (f i n e g r a i η),

Then, a patterned cover layer 130 is formed on a portion of the second metal layer 104. Please refer to FIG. 4b. A grain boundary 103 is formed between the first metal layer 102 and the second metal layer 104. The second metal layer 104 can be formed on the first metal layer 100 by a thermal evaporation method, a sputtering method, and a sputtering method. When the metal film layer is formed, a cooling (heat dissipation) Step) The surface of the newly formed metal film layer is cooled instantaneously. By controlling the initial nucleation time and time under the film formation conditions, the film size can be controlled while controlling the crystal grain size, so that the second metal layer 104 can be formed with Arbitrarily oriented fine grain crystals. The above cooling (heat dissipation) step may be instantaneous cooling with a flowing inert gas, and the inert gas used to cool the surface of the metal film layer may include helium, and the cooling step is performed by reducing the temperature from about 2 ° This is done in a range from c / s to about 40 ° c / s7. The material of the second metal layer composed of the f 定向 ne grain crystal with any orientation can be selected from chromium (Γ), chin (Ti), | lutetium (A1), platinum (Mo), tantalum (Ta) and crane (W), or an alloy of any combination of free chromium (Cr), titanium (Ti), | Lu (A1), molybdenum (Mo), button (Ta), and tungsten (W) in. The thickness ratio of the columnar structure of the first metal layer 1 02 and the fine-grained crystal second metal layer 1 104 according to the present invention may be about 30: 1 to 1:30, and a preferred thickness ratio may be It is about 2 0: 1 to 5: 5.

Next, a portion of the first metal layer 104 and the first metal layer 102 which are not covered by the capping layer 301 are removed by a wet etching. First, referring to FIG. 4c, wet etching first performs isotropic etching on the second metal layer 104 composed of fine grain crystals to obtain the inclined side surface 122 of the second metal layer. And this second metal layer is tilted by wet etching

584914 V. Description of the Invention (ίο)

The gradual eclipse of 22 is the second perfect shape of the fine grain crystal structure: the first metal layer 102 of the crystal structure will gradually be exposed! Section ::. On the wet side, the first exposed columnar crystals are etched at the junction of the bright grains of the second and third crystals, and the columnar crystals are etched into the kinematics. The etching direction is mainly formed by columnar crystals. Direction, so for the first metal layer composed of columnar crystals exposed in succession, an isotropic etching effect can be obtained, and the metal film layer can be achieved (the first metal layer 102 and the second metal layer 1 〇4) With the purpose of inclined side 122, refer to the figure. Example 2 For the process of forming a gate with an inclined side structure in a thin film transistor array, please refer to FIG. 5. A glass or similar material is used as the implementation. Example substrate 200. Using the process method for forming a metal beveled etching structure described in Example 1 to form a first gate metal composed of columnar crystals that grow in a direction normal to the substrate surface A gate metal layer 203 with an inclined side surface (tape: r pr0file) 220 composed of a second gate metal layer 204 composed of a layer 202 and a second gate metal layer 204 composed of a fine grain (fi ne gra i η) crystal having an arbitrary orientation. Wherein the first gate metal layer 20 and The two gate metal layers 204 may be made of the same or different materials, such as chromium (Cr), titanium (Ti), Ming (A1), molybdenum (Mo), button (Ta), and tungsten (W), or may be The same or different alloys of any combination of chromium (Cr), titanium (Ti), aluminum (A1), molybdenum (Mo), tantalum (Ta), and tungsten (W). The first gate of the above-mentioned columnar crystal structure gold

584914

Thicker; ratio 2τ, finer: "The metal film layer of the second gate metal layer 204 of the grain crystal can be from about 30: 1 to 1:30, and a preferable thickness ratio can be about 2 ^ 1. The above-mentioned gate metal layer 203 with the inclined side 220 can be a barrier layer (such as iayer) on it, wherein the above hinders: work, from the ratification group, nitride pins, nitride nitride, nitride nitride In the group consisting of Shixihua chemical group buttons, or two or more composite film layers. Example 3 The process of forming a source / drain with an inclined side structure in a thin-film transistor array is in a thin-film transistor of a liquid crystal display In the fabrication of a thin film transistor, it is important to etch a plurality of conductive layers to form a thin film transistor source / drain with a taper profile structure. The present invention provides a method for forming a thin film transistor The array bus has a source / drain with an excellent inclined side structure, which can simplify the process of thin-film transistor source / depolarization, and improve the productivity and quality of thin-film transistors. Please refer to Figure 6a for a glass or A similar material is used as the substrate of this embodiment 3 0 0 A conductive layer such as a metal or an alloy is deposited on the substrate 300, and an etching process is performed to etch the conductive layer into a patterned gate electrode 302. The material used as the gate electrode 302 may be chromium (Cr), titanium (Ti), Shao (A1), molybdenum (Mo), button (Ta), and tungsten (W) can also be made into a composite layer structure, such as a double-layer structure, or can be Any of chromium (Cr), titanium (Ti), aluminum (A1), molybdenum (M〇), tantalum (Ta), and tungsten (W)

0632-8948TWF (nl) · AU91225; Phoelip.ptd page 15 584914 V. Description of the invention (12) Combination alloy. The thickness of the gate electrode 3 002 is about 5,000 to 4,000 angstroms, and it can be formed by a thermal evaporation method, an electronic snap evaporation method, or a sputtering method. Next, a gate insulating layer 304 is formed on the gate 302 and the substrate 300 to serve as an insulating structure. The gate insulating layer 304 can generally be made of an oxide, nitride, or similar material. For example, a plasma chemical vapor deposition method can be used to form silicon nitride as the gate insulating layer. A semiconductor layer 306, such as amorphous silicon (aS i) or polycrystalline silicon (p-Si), is then deposited on the gate insulating layer 304. In this embodiment, the thickness of the semiconductor layer 306 is about 500 to 3000 angstroms. In some examples, the semiconductor layer 3 06 can also use a composite film layer structure. Still referring to FIG. 6a, next, a doped silicon layer 308 is formed on the semiconductor layer 306. The ion doping process can be used to implant ions into the amorphous silicon or directly deposit a doped silicon layer. For example, it can be directly deposited using a plasma vapor deposition method. Then, the above-mentioned semiconductor layer 306 and the doped silicon layer 308 are patterned on the gate electrode 302 by a photolithography process. Please refer to FIG. 6b to form a source / drain composite metal layer 3 11 and a composite metal structure layer 3 11 on the doped silicon layer 3 08 and the gate insulating layer 3 04, and a cover is formed thereon. Layer 314. The composite metal structure layer 311 includes at least a first source / drain metal layer 3 1 o formed with a columnar (c umnar) crystal grown in a direction normal to the substrate surface and fine grains (fi ne grain), the second source / drain metal layer 312, and the second source / drain metal layer 3 1 2 is formed on the first source / drain metal layer, wherein a columnar crystal is formed. The method of forming the first source / drain metal layer 3 丨 0 and the method of forming the second source / drain metal layer 3 丨 2 composed of fine grain crystals are true.

0632-8948TWF (nl); AU91225; Phoelip.ptd page 16 584914 5. Description of the invention (13) As described in the first embodiment. The first source / drain metal layer 3 1 0 and the second source / drain metal layer 312 may be made of the same or different materials, such as chromium (Cr), titanium (Ti), aluminum (A1), Molybdenum (Mo), button (Ta), and tungsten (W), or may be the same or different chromium (Cr), titanium (Ti), Ming (A1), thorium (Mo), group (Ta), and or | (W) Any combination of alloys. The thickness ratio of the metal film layer of the first source / and electrode metal layer 3 1 0 of the above-mentioned columnar crystal structure and the second source / drain metal layer 3 1 2 of fine grain crystal may be about 30: 1 to 1 : 30, and a preferred thickness ratio may be about 20: 1 to 1: 5. Referring to FIG. 6c, the second source / drain metal layer 3 1 2 and the first source / > and the electrode metal layer 3 which are not covered by the cover layer 3 1 4 are removed by a wet etching. 10, as described in Embodiment 1, the channel 3 2 0 of the source / electrode composite metal layer 3 11 can have an inclined side surface 3 2 2 to obtain a thin film source / drain electrode with an inclined side structure. In summary, the present invention provides a metal oblique etching structure. The oblique side will increase the coverage of the secondary metal layer, and reduce the disconnection of the element or the increase of the impedance. With the present invention, the coverage capability of the secondary film layer can be increased, which effectively avoids the problems of disconnection or increase of impedance caused by poor step coverage in the conventional technology, and ensures that the component has high-reliability contact . The metal oblique etching structure of the first metal layer having a columnar crystal structure and the second metal layer having a fine grain crystal structure according to the present invention is formed in a process step. After the first metal layer, the above-mentioned process steps for forming the first metal layer can be continued, and only the process parameters of the coating film (such as the heat dissipation rate of the crystal grains) need to be adjusted (added).

0632-8948TWF (nl); AU91225; Phoelip.ptd p. 17 584914

Special rate), other additional manufacturing processes, grain), M +, B], and a second metal layer composed of fine grains (f i ne graln). After that, we can achieve the purpose of metal bevel etching, sp 4, after the private sequence of etching, we will use the technology to enrich the phase ... First, the μ # used for metal bevel etching will not only simplify the manufacturing process, It is also beneficial to the improvement of the yield of all corner etched structures. For metal oblique etching-although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. "Any person skilled in the art can do so without departing from the spirit and scope of the present invention." Changes and Runyi 'Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application.

0632-8948TWF (nl); AU91225; Phoelip.ptd, page 18, 584914, a brief description of the drawings Figures 1 a and 1 b are a series of cross-sectional views, which are used to explain the phenomenon when a secondary layer is formed on a metal layer with vertical sides. . Figures 2a and 2b are a series of cross-sectional views for explaining the phenomenon when a secondary layer is formed on a metal layer with an inclined side. Figures 3a and 3b are a series of cross-sectional views for illustrating the vertical side surface obtained by etching a metal layer having a columnar crystal structure. Figures 3c and 3d are a series of cross-sectional views illustrating the prior art for metal beveled silver engraving. Figures 4a to 4e are cross-sectional views illustrating the flow of a preferred embodiment of the method for engraving a metal bevel according to the present invention. Fig. 5 is a cross-sectional view illustrating a preferred embodiment of a thin film transistor gate structure having an inclined side surface according to the present invention. Figures 6a to 6c illustrate one preferred embodiment of the method for forming a source / non-polar electrode of a thin film transistor with a slanted side structure according to the present invention. A cross-sectional view of the flow chart 0 Symbol description: 10 to substrate; 1 to 4 barrier layer 18 ~ secondary film layer; 22 ~ overhang; 3 0 ~ cover layer; 4 2 ~ vertical side 4 7 ~ inclined side 1 2 ~ metal layer; 16 ~ dielectric layer; 20 ~ channel; 2 4 ~ Pinholes; 40 ~ etching channels; 4 ~ 5 channels; 50 ~~ columnar crystal structure metal layers;

0632-8948TWF (nl); AU91225; Phoelip.ptd, page 19, 584914, 5 1 ~ Grain boundary; 5 2 ~ Fine grain crystal structure metal layer; 100 ~ Substrate; 102 ~ First metal layer; 103 ~ grain boundary; 104 ~ second metal layer; 105 ~ metal film layer; cover layer; first gate metal layer; second gate metal layer substrate; gate insulation layer; doped silicon layer; 1 2 2 ~ inclined side; 130 2 0 0 ~ substrate; 202 203 ~ gate metal layer; 204 2 2 0 ~ inclined side; 300 3 0 2 ~ gate; 304 3 0 6 ~ semiconductor layer; 308 3 1 0 ~ first One source / non-electrode metal layer; 311 ~ source / drain composite metal layer; and 3 1 2 ~ second source / non-electrode metal layer; 314 ~ cover layer; 320 ~ channel 3 2 2 ~ inclined side .

0632-8948TWF (nl); AU91225; Phoelip.ptd page 20

Claims (1)

584914 1. A metal oblique etching structure, comprising at least: a substrate; a columnar structure having a columnar growth with respect to the normal direction of the substrate surface; On the above substrate and process, a second gold f layer composed of fine grain crystals of fine grain (finegrai η) is formed on the first metal layer, and the first metal layer and the first i-type layer are formed. The edges are inclined sides. 2. The metal oblique etching structure according to item 1 in the scope of the patent application, wherein the first metal layer and the second metal layer are made of the same or different materials, and are selected from chromium (Cr), cyanine, Shao (A1), surface (m0), ta (f) (t), tungsten (W), or any combination of the above metals In the structure, the thickness ratio of the metal film layer of the first metal layer to the second metal layer is from about 30: 1 to 1:30. 4. The metal oblique etching structure according to item 1 of the Ming patent scope: the thickness ratio of the metal film layer of the first metal layer to the second metal layer is from about 20: 1 to 1: 5. • 5 · — A method for bevel etching of metal, including at least the following steps to provide a substrate; forming a long columnar (c ο 1 umnar) crystal structure on the substrate ^ relative to the normal direction of the substrate surface The first metal layer; 584914 VI. Application scope of patent " " 'A second metal layer composed of fine grain crystals with arbitrary orientation is formed on the first metal layer; Arbitrarily oriented fine grain crystals on the second metal layer; and removing a portion of the first metal layer and the second metal layer that are not covered by the cover layer with a #cut procedure, so that One tilted side. 6 · The method for metal bevel etching as described in item 5 of the scope of the patent application, wherein the first metal layer and the second metal layer are composed of the same or different materials, and are selected from chromium (Cr), Titanium i), aluminum (A1), molybdenum (Mo), group (Ta), and tungsten (w), or an alloy of any combination of the above metals. 7 · The method for metal bevel etching as described in item 5 of the scope of the patent application, wherein the thickness ratio of the metal film layer of the first metal layer to the second metal layer is from about 30: 1 to 1: 3. . 8 _ The method for metal bevel etching as described in item 5 of the scope of patent application, wherein the thickness ratio of the metal film layer of the first metal layer to the second metal layer is from about 20: 1 to 1: 5. 9. The method for bevel etching of a metal as described in item 5 of the scope of patent application, wherein the above-mentioned etching procedure is a wet etching. 1 0 · A thin film transistor gate structure with inclined sides, which at least includes: a substrate to be formed with a thin film transistor, a first having a columnar crystal structure that grows in a direction normal to the substrate surface The gate metal layer is formed on the substrate 0632-8948TWF (nl); AU91225; Phoelip.ptd Page 22 584914 6. In the scope of patent application; and a second gate metal layer composed of fine grains with arbitrary orientation (f 丨 negrain) crystal is formed on the above Above the first gate metal layer, and the edges of the first gate metal layer and the second gate metal layer described above are tapered sides (taper profile). The thin film transistor gate structure on the side further includes a barrier layer compliantly formed on the first gate metal layer and the second gate metal layer with the inclined side. From the group consisting of nitride group, molybdenum nitride, titanium nitride, tungsten nitride, silicide button and tantalum nitride silicide, or a composite film layer composed of two or more materials. 1 2 · The thin film transistor gate structure with an inclined side surface as described in item 1 of the scope of the patent application, wherein the first gate metal layer and the second gate metal layer are made of the same or different materials. It is selected from the group consisting of chromium (Cr), chitin (T i), Ming (A 1), indium (MO), group (T a), and tungsten (W), or an alloy of any combination of the above metals in. 1 3. The thin film transistor gate structure with inclined sides as described in item 10 of the scope of patent application, wherein the thickness ratio of the metal film layer of the first gate metal layer to the second intermetallic metal layer is about 3 〇: 1 to 1:30. 14. The thin film transistor gate structure with inclined sides as described in item 10 of the scope of patent application, wherein the thickness ratio of the metal film layer of the first gate metal layer and the second intermetallic metal layer is from about 20 : 1 to 1: 5. 1 5 · A method for forming a gate electrode having an inclined side structure in a thin film transistor array, wherein the thin film transistor array is formed on a substrate, 584914 6. Scope of patent application — The method includes at least the following steps: forming a first gate metal layer having a columnar crystal structure that grows in a direction normal to the substrate surface on the substrate; Forming a second gate metal layer with fine grain crystals of arbitrary orientation on the first gate metal layer; forming and defining a cover layer on the second gate metal layer ; And wet etching the first gate metal layer and the second gate metal layer of the part not covered by the cover layer, so that a gate with a slanted side structure is only 0 1 6 · as in the scope of patent application The method for forming a gate electrode with a slanted side structure in a thin film transistor array as described in Item 5 further includes compliantly forming a barrier layer on the first gate metal layer and the first gated metal layer with the slanted side. On the two-gate metal layer, the above barrier layer is selected from the group consisting of nitride nitride, molybdenum nitride, titanium nitride, tungsten nitride, silicide button and nitrogen silicide button, or two or more materials Composition In the film layer. 1 7 · The method for forming a gate with an inclined side structure in a thin-film transistor array as described in item 5 of the scope of the patent application, wherein the first gate metal layer and the second gate metal layer are made of the same or different The material composition is selected from the group consisting of chromium (Cr), titanium (Ti), aluminum (A1), molybdenum (Mo), group (Ta), and tungsten (W), or any combination of the above metals Alloy. 1 8 · The method for forming a gate electrode with an inclined side structure in a thin film transistor array as described in item 15 of the scope of patent application, wherein the thicknesses of the metal film layers of the first gate metal layer and the second gate metal layer The ratio is about 3 0: 1 584914 VI. Application scope of patent ----- to 1:30. 19 · The method for forming a gate electrode with an oblique side structure in a thin film transistor array as described in Item 15 of the declared patent scope, wherein the first gate metal layer and the second gate metal layer are metal film layers The thickness ratio is from about 20 · 1 to 1: 5. 2 · A thin film transistor source / drain structure with inclined sides, which at least includes: a substrate having a gate electrode thereon; a gate insulating layer conformably formed on the gate electrode; a patterned silicon A layer is formed on part of the above gate insulating layer; a patterned doped silicon layer is formed on the above silicon layer; and a columnar (c ο 1 umnar) crystal structure having a growth direction relative to the normal direction of the substrate surface is formed. A source / non-electrode metal layer is formed on the above-mentioned Shi Xi layer and gate insulating layer; and a second source / drain metal layer composed of fine grains of arbitrary orientation (fine gr ain) crystals is formed on the above Above the first source / drain metal layer 'and the edges of the first source / drain metal layer and the second source / non-metal layer are inclined sides. 21. The thin film transistor source / drain structure with an inclined side according to item 20 of the scope of patent application, wherein the first source / non-metal layer and the second source / drain metal layer are made of the same Or different materials, selected from the group consisting of chromium (Cr), titanium (Ti), aluminum (A1), molybdenum (Mo), button (Ta), and tungsten (W) In any combination of alloys. 2 2 · Thin with slanted sides as described in item 20 of the scope of patent application 0632-8948TWF (nl); AU91225; Phoelip.ptd Page 25 584914 VI. Patent application film transistor source / non-polar structure, wherein the above first source / drain metal layer and second source / drain The thickness ratio of the metal film layer of the metal layer ranges from about 30: 1 to 1:30. 2 3 · The thin film transistor source / non-polar structure with inclined sides as described in item 20 of the scope of patent application, wherein the first source / non-metal layer and the second source / drain metal layer The metal film thickness ratio ranges from about 20: 1 to 1: 5. 2 4 · A method for forming a source / drain with a slanted side structure in a thin film transistor array, which includes at least the following steps: providing a substrate with a gate formed thereon; and compliantly forming a gate insulating layer on On the above gate; forming and defining a silicon layer on the above part of the gate insulating layer; forming and defining a doped silicon layer on the above silicon layer; forming a columnar shape with a direction normal to the substrate surface (columnar) a first source / drain metal layer composed of crystals on the above-mentioned doped silicon layer and gate insulating layer; forming a second source of fine grain crystals with arbitrary orientation A source / drain metal layer on the first source / drain metal layer; forming and defining a capping layer on the second source / drain metal layer; and using the doped silicon layer as an etch Stop layer, wet etching the first source / drain metal layer and the second source / drain metal layer of the portion not covered by the capping layer, so as to reach a source / drain electrode having an inclined side structure . 0632-8948TWF (nl); AU91225; Phoelip.ptd page 26 584914 6. Application for patent scope 25.-A method for forming a source / drain in a thin film transistor array, which includes at least the following steps ... The substrate structure of the Zhen 'plane provides a gate on which a gate is formed; a gate insulation layer is formed on the gate conformably; a silicon layer is formed on the above-mentioned inter-layer gate insulation layer; formed and defined A doped silicon layer is formed on the above-mentioned silicon layer; a first barrier layer is formed on the above-mentioned doped layer and the gate insulating layer to form a columnar shape having a growth direction relative to the normal direction of the substrate surface ) The first source / electrode metal layer composed of crystals is on top of the previous barrier layer; < $ Form fine crystal grains (fi ne gra i η) with arbitrary orientation crystals to form 2 second source / electrode The electrode metal layer forms a second barrier layer on the first source / drain metal layer, and forms a cover layer on the second barrier layer. On; and j the above-mentioned doped silicon layer is an etch stop layer, wet etching The first barrier layer, the first source / drain metal layer, the first source / drain metal layer, and the second barrier layer are partially covered by the cover layer, so as to have an inclined side structure. 26. The method for forming a thin film transistor as described in item 24 or 25 of the scope of application for a patent, the source / drain method of the inclined side structure in the column, wherein the above-mentioned first source / drain electrode The metal layer and the second source / drain metal layer are composed of the same material or page 27 of 0632-8948TWF (nl); AU91225; Phoelip.ptd 584914. The materials with different patent application scopes are selected from chromium (Cr), titanium (Ti), aluminum (A1), steel (Mo), tantalum (Ta), and tungsten (w), or an alloy of any combination of the above metals. 2 7 · As the scope of patent application No. 24 or The method for forming a source / drain with a slanted side structure in a thin-film transistor array according to item 25, wherein the metal film layer of the first source / drain metal layer and the second source / drain metal layer described above The thickness ratio is from about 30: 1 to 1: 3. 28. The shape as described in item 24 or 25 of the scope of patent application A method for a source / drain electrode with an inclined side structure in a thin film transistor array, wherein the thickness ratio of the metal film layer of the first source / drain metal layer and the second source / drain metal layer is about 20 : 1 to 1: 5. 2 9 · The method for forming a source / drain with a slanted side structure in a thin film transistor array as described in item 25 of the patent application scope, wherein the first barrier layer and the second The barrier layer is composed of the same or different materials. It is selected from the group consisting of nitride buttons, molybdenum nitride, titanium nitride, tungsten nitride, silicide buttons, and nitrogen silicide buttons, or two or more of them. In the composite layer composed of materials. 0632-8948TWF (nl); AU91225; Phoelip.ptd p. 28