TW579661B - Plasma generation device and plasma processing device - Google Patents

Abstract

The present invention provides a plasma generation device and a plasma processing device, which comprises: a vacuum container 1 with controllable inner pressure; a gas supply mechanism 2 for supplying gas into the vacuum container 1; and, a plasma generation mechanism for emitting electromagnetic wave toward the vacuum container 1 with gas introduction to generate the plasma. The plasma generation mechanism includes: a tank-like antenna 4 for forming the tank 41of electromagnetic wave emission as a conductor; and, an AC power 5 for supplying power to the tank-like antenna 4; and, the tank-like antenna 4 can also has the shape to generate the impedance of the plasma when having low power supply frequency. Thus, the present invention can improve the plasma state without enlarging the dimension of tank-like antenna to prevent the reduction of impedance, and generate the plasma in lower frequency, so as to reduce the manufacturing cost and operation cost.

Description

579661 V. Description of the invention (1) Background of the invention Field of the invention The present invention relates to a plasma generating device and a plasma processing device, and particularly to an inductively coupled plasma generating device, a semiconductor device, and a plasma generating device having a high density plasma. Liquid crystal display and other dry etching equipment used in the manufacturing process, grinding processing equipment, etc., or other micro-processed etching, grinding processing, cleaning, surface modification, etc., can use high-density plasma in the field of better technology used. Related technologies In the field of plasma processing devices such as dry etching devices and polishing processing devices used in manufacturing processes such as semiconductor devices and liquid crystal displays, in recent years, with the increase in the size of processing substrates, it has been required to increase the size of the plasma generated in the processing chamber. . On the other hand, high plasma density is required for the purpose of ensuring a certain processing speed such as etching rate and polishing rate and the production energy of the device. Regarding the high density of the plasma, in order to promote the excitation efficiency of the plasma, a method of inductively coupled plasma (Inductively Coupled Plasma, hereinafter referred to as I C P) is adopted. I C P is mainly to send high-frequency current to the antenna excitation coil, so that it generates an inductive magnetic field in the air to generate plasma. Its characteristics are compared with ECR (Electron Cyclotron Resonance) device, microwave plasma generation device, magnetron R E E device, etc. The device structure is relatively simple, and high density plasma is formed uniformly in a vacuum container under high vacuum. When I C P is used under high pressure, the distribution of plasma density strongly depends on the externally supplied electromagnetic field, which is the form of the electromagnetic field distribution produced by the antenna. Hereby single

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579661 V. Description of the invention (2) The antenna of (S i n g 1 e D e s i g η) structure has strong electromagnetic field only near the antenna, so it will cause localization of the plasma density distribution that strongly depends on the shape of the antenna. In order to improve the excitation efficiency of the plasma, when the frequency of the high-frequency oscillator is increased, a single structure of the antenna will cause the antenna impedance to increase, or the localization of the electromagnetic field distribution made by the antenna. In view of this, in order to suppress the increase in antenna impedance, shortening the antenna length is an idea that contradicts the increase in the diameter of the plasma. For example, even if the diameter can be increased, the spatial non-uniformity of the electromagnetic field will cause the non-uniformity of the plasma density. With a single structure antenna, when a high frequency oscillator is used to excite the antenna, a strong vibrating electric field is generated in a vertical direction on the surface of the metal conductor constituting the antenna. On one side, the electric field created by the antenna applies a force to the plasma of the charged particles. Generally, the plasma is composed of different heavy ions and electrons with a mass ratio of about 1000 times, so the sensitivity to the electric field is different. For example, when the frequency band is about 1 3. 5 6 Μ Η ζ, Heavy ions cannot follow the high-frequency vibration of the electric field without showing a change in position, and because light electrons can sufficiently follow at this level of frequency, a plasma system is formed in which only the electrons react in real time to the change of position of the electric field. In this case, there is no problem if the electric field produced by the antenna is parallel to the antenna coil surface, but if the antenna coil surface is vibrated vertically, only the electrons are attracted by the antenna, or the electric field is repelled in synchronization with the electric field vibration and the charge is between the antenna and the plasma. State of change. Looking at this state for a long time (〇rder), it can be seen that the average surplus of electrons exists near the antenna. This excess electron excitation will isolate the surface potential of the dielectric (vacuum container) of the antenna from the plasma and the plasma and The effect of a relatively low ground potential. Specifically, for example, in the case of a linear antenna, a strong electrostatic field proportional to the inverse of the distance r from the antenna forms a strong electrostatic field.

Page 5 of 579661 V. Description of Invention (3)

Vdc. Here again, Vdc is defined as "the time-averaged potential of the side surface of the air container that isolates the dielectric of the antenna and the plasma". Also, due to the occurrence of the above Vdc, positive ion splashing on the surface of the vacuum container is generated, so the surface of the vacuum container is knocked out of impurities, which causes a major problem in substrate processing. One of the methods to suppress Vdc is to insert a Faraday shield shield between the antenna and the plasma. However, the use of Faraday shields to reduce farming with incident electromagnetic fields cannot effectively supply energy and fatigue, so it becomes a plasma processing device with poor energy efficiency. In addition, Japanese Patent Application Laid-Open No. 3-779925 discloses a plasma processing apparatus having a planar coil for electromagnetic fields. This plasma processing device generates a plasma inductively coupled electromagnetic field made of a planar coil to achieve uniform and high-density plasma. However, this plasma processing device is compatible with the above-mentioned Vdc generating mechanism, and the use of a dielectric lens or the like will have the difficulty of avoiding this problem. In order to solve the above problems, a technique for applying a slot antenna is proposed. A slot antenna is defined as an elongated groove formed on the surface of a metal conductor, that is, a transmitting antenna formed by a slot. The characteristic of this slot antenna is that it does not have the electrostatic field effect that the linear antenna has in proportion to the inverse of the important distance of the adjacent field. Therefore, it is easy to avoid the problems of the above-mentioned Vdc generating mechanism. When using such a slot antenna to generate a plasma, it is known to open a slot opening in a microwave waveguide that can be powered by an oscillator, and use this slot opening as a slot antenna to emit electromagnetic waves. technique. However, when using a waveguide, the size and shape of the waveguide are limited by the wavelength of the electromagnetic wave that is being supplied. For example, when an electromagnetic wave with a frequency of 300 MHz is used, its wavelength

579661 V. Description of the invention (4) is 1 meter, but when using 3 MW Η z electromagnetic waves, its wavelength becomes 100 meters. As the size and shape of the required waveguide becomes huge, it is actually In regions longer than the microwave wavelength, it is difficult to use a waveguide to power the slot antenna. The method of the waveguide is also used. Because the state of the plasma is greatly affected by the shape and configuration of the slot antenna, the electromagnetic wave posture in the microwave waveguide, and the restrictions on the shape and configuration of the slot antenna are increased. There are cases where it is not possible to form these into a shape required for a plasma generation area and a plasma generation density required for plasma treatment. In addition, in order to use the short-wave electromagnetic wave in the vacuum container of the plasma processing device, it may cause fluctuations in the vacuum container, and the plasma may be uneven. Therefore, for the purpose of uniformly generating plasma with a large aperture, the use of the slot antenna of the waveguide will be limited as described above. In order to solve the above problems, the inventors of the present case proposed a "plasma generating device and a power generator" including a slot antenna and a high-frequency power supply for supplying the slot antenna, as described in JP-A No. 10 _ 0 7 4 5 9 7 Pulp processing unit ". Japanese Patent Application Laid-Open No. 10-0 7 45 9 7 "Plasma generating device and plasma processing device" includes: a processing chamber, which contains a substrate and processes the substrate with a plasma; and a plasma generating mechanism, which introduces processing The gas processing chamber emits electromagnetic waves to generate plasma; the aforementioned plasma generating mechanism uses slot openings provided on a conductor plate for supplying high frequency power as slot antennas, and direct power supply points are provided on both sides of this slot opening. Method, in addition, the plasma processing apparatus forms a plurality of slot openings on the aforementioned conductors, sets power supply points in each slot, and sets a matching box of a phase control mechanism for controlling the power supply phase between the slots.

Page 7 579661 V. Description of the invention (5) The slot antenna adopting this power supply method does not only need a waveguide but also eliminates the situation that the shape of the slot opening is restricted by the electromagnetic wave attitude at that time. Since lower frequency electromagnetic waves can be used, fluctuations in the vacuum container can be prevented. Since the shape configuration of the slot antenna can also be designed according to the necessity of the generated plasma state, etc., it is a better method for uniformly generating plasma with a large aperture. The plasma generating device to which the aforementioned slot antenna is applied, in order to reduce the energy required to generate the plasma, it is required to use a lower frequency below about 100 MHz. However, when a slot antenna uses a lower frequency to generate a plasma, the slot antenna is prone to short circuit due to insufficient impedance, and because of the weak magnetic combination with the plasma, there is a problem that a large-sized slot antenna is required. More specifically, the above-mentioned Japanese Patent Application Publication No. 10-0 74 5 9 7 provides a power supply frequency of 3 0 Μ Η z. The length of the folded slot antenna can be designed to be about 200 mm, and the power supply frequency is 5 0 Μ. Η ζ can be designed to have a circular slot antenna diameter as small as about 300 mm, but the power supply frequency is about 100 Μ Μ below Η because the required slot opening length is large and the device is large, so Hope for improvement. In addition, because the cost of the oscillator and synchronization phase matching box above about 100 Η ζ ζ is high, in order to reduce the manufacturing cost of the device, it is expected to use the industrial frequency of 13.56 MHz, or 27.12 MHz, and 40.68 MHz. Device and the corresponding matching box, but because the wavelength of the electromagnetic field generated is large at this time, if the slot antenna has the necessary length, there is a problem that the device is bulky to about 13 meters, which is not practical. In addition, in the technique described in Japanese Patent Application Laid-Open No. 10-0 7 4 5 9 7, in order to increase the generation area and density of the plasma, a plurality of slot openings are formed on the conductor and provided to control the power supply phase between the slots. Phase corrector, etc.

P.579661 V. Description of the invention (6) However, at this time, there is a problem that it is difficult to control the synchronization of the power supply frequency of the majority of slots, and the impedance of the antenna is reduced due to the formation of the majority of slot openings on the conductor, which is easy to short However, due to the high cost of the phase corrector, in order to reduce the manufacturing cost of the device, it is expected to take countermeasures. In addition, the arrangement relationship between the slot antenna and the vacuum container is as shown in FIG. 34. The slot antenna C1 is disposed outside the vacuum container C2 installed on the lower side thereof, that is, in the atmosphere, and the vacuum container C2 is disposed in the slot C. An opening portion C21 is provided near the lower side, and a dielectric C3 such as quartz is arranged in the Duse opening portion C21. Here, the dielectric C3 guides the AC electromagnetic field generated from the slot antenna C1 into the vacuum container C2 through the opening C21, and seals the vacuum container C2 with the 0 ring C22 and the like. In order to maintain the vacuum inside the vacuum container C2, Set by. However, in this configuration, when the area of the slot antenna C 1 inside the vacuum container C 2 is ensured through the opening portion C 2 1 and the area of the opening portion C 2 1 is enlarged, in order to maintain a resistance against the external atmospheric pressure of the vacuum container C 2 The structural strength maintains the vacuum, and it is necessary to increase the thickness of the dielectric C3. Such an increase in the thickness of the dielectric C3 not only reduces the penetration potential supplied to the antenna power supply portion, but also reduces the density of magnetic lines of force crossing the plasma P. As a result, the lighting of the plasma P will be started to increase the electric power and decrease the magnetic coupling with the plasma P. That is, the thickness of the dielectric C 3 cannot be reduced, and the thickness of the dielectric C 3 is limited. Because the interval between the slot antenna C 1 and the vacuum container C 2 cannot be arbitrarily adjusted, it is difficult to control the penetration voltage (the penetration of the power supply to the antenna voltage). problem. In addition, since the metal conductor surface of the slot antenna C 1 in the vacuum container C 2 is ensured by the size of the dielectric C 3 through the opening C 2 1 of the vacuum container C 2, the electromagnetic field emission of the slot antenna C 1 is limited. Face opening area while reducing energy

Page 99579661 V. Description of the invention (7) Efficiency and obstruction of slot antennas, sometimes it is necessary to combine the problems 1. Improve the performance, improve the nature 2. No low frequency 3. Strive for strength; In order to solve the problem of the length and length of the antenna at this inch wavelength, it is necessary to obtain a high plasma plasma point, etc., which requires a large amount of electricity to produce electricity. As the conductor has a low-level subject, the electric power of the electromagnetic horizontal and southern phases of this issue is based on the large diameter of the plasma P. The power supply point needs to be connected to the ground point, but the rest needs to be sealed without regard to the sealing conditions of the vacuum container, which will cause difficulties. SUMMARY OF THE INVENTION In view of the above circumstances, it is desirable to achieve the following objects. The expansion of the generated area, the uniformity of the plasma concentration and the prevention of the rise of the lamp starting power, combined with the magnetic properties of the plasma, the improvement of the plasma state. The size of the slot antenna can prevent the decrease of the impedance, and it can be more compact. Cost, reduction of operating costs. The plasma generating device includes: a vacuum container that can control an internal pressure mechanism to supply gas into the vacuum container; and the aforementioned vacuum container that generates plasma gas to emit electromagnetic waves to generate an electric generating mechanism including: a slot antenna that will emit electromagnetic waves: and The AC power supply is used to feed the slot antenna. The aforementioned slot-shaped power supply frequency can also generate the impedance shape of the plasma. With a low power supply frequency of 0, it means that it has a frequency greater than the ruler wave frequency of the vacuum container, that is, compared with the imported vacuum container. The frequency of one long electromagnetic wave selected in the size of the inner gas part, diagonal, radius, length of one side, etc. is a small frequency. Plasma generating device, in which the aforementioned slot-shaped antenna of the magnetic current source antenna is electrically connected between the linear antennas of the B a b i n e t principle

Page 10 579661 V. Description of the invention (8) Duality of the magnetic field It is appropriate to set the aforementioned conductor shape and the aforementioned slot shape to a two-dimensional structure or a three-dimensional structure. In the plasma generating device of the present invention, it is preferable to design the conductor shape and the slot shape of the slot antenna as the magnetic current source antenna into a cylindrical structure, a spherical structure, a flexion surface, etc. In order to use the dual pairing of the electromagnetic boundary with the linear antenna based on the Barbinite principle, and increase the plasma density occurring inside. In the plasma generating device of the present invention, the conductor of the slot antenna may be formed as a part or all of the vacuum container. In the plasma generating device of the present invention, the power supply point to the slot antenna can be set at two, three, or four points, or the power supply point is set at one point to set the conductor to a ground potential. In addition, the power supply point is Set at the best position for the slot antenna's emission status. In the plasma generating device of the present invention, the grooves may be connected at one place, or two or more places may be provided in parallel or in series. The plasma generating device of the present invention includes: a processing chamber that contains a substrate therein and processes the substrate with a plasma: a gas supply mechanism that supplies processing gas to the processing chamber; a plasma generating mechanism that emits electromagnetic waves into the processing chamber into which the processing gas is introduced to Generating a plasma; and an exhaust mechanism for exhausting the aforementioned processing chamber to a required pressure: the aforementioned plasma generating mechanism includes: a slot antenna, which forms a slot that emits electromagnetic waves in a conductor; and an AC power source, which supplies power to the slot antenna; The aforementioned slot antenna has a shape that can also generate the impedance of the plasma when it has a low power supply frequency to solve the above-mentioned problems. Here, the plasma generating mechanism has a structure that is slightly the same as that described in the aforementioned plasma generating device.

Page 11 579661 V. Description of the invention (9) A slot antenna is defined as an elongated groove formed on the surface of a metal conductor, that is, a transmitting element formed by a slot. Slot antennas are also called magnetic current antennas. They treat magnetic current as a source of electromagnetic waves. Unlike linear antennas, they have the physical characteristic that the magnetic field parallel to the opening surface of the slot's opening is canceled to zero on the surface and back. According to the Babinite principle of duality of electromagnetic fields, slot antennas have corresponding linear antennas that have duality of electromagnetic fields (the property of the replacement of electric and magnetic fields). Although the characteristics are easy to analyze, The characteristic of the slot antenna is that it does not have the electrostatic field effect proportional to the inverse 3 of the significant distance of the adjacent field that the linear antenna has. The method of generating a plasma with a slot antenna uses an elongated cut groove usually on a metal plate. However, the shape of the groove is analyzed according to the above linear antenna, which has the union of phase geometry and becomes a magnetic current source antenna. The characteristics of the deformed form, or into the form of precession, to improve the impedance of the slot antenna and magnetic binding with the plasma. At this time, it is not necessary to increase the size of the slot antenna when the slot antenna is set to a low power supply frequency, and it has a shape that can generate the impedance of the plasma, which can prevent the interference of fluctuations in the vacuum container. It also makes use of the nature of the slot antenna as a planar antenna, making the slot antenna part or all of a vacuum container, and making the antenna conductor a cylindrical structure, a hemispherical structure, a folded surface, etc. to increase the electricity generated inside. The density of the slurry, and the slot shape is appropriately selected, so that the power supply point to the slot antenna is 1 and the aforementioned conductor is at the ground potential. Therefore, it is not necessary to set a dielectric between the slot antenna and the vacuum container for the purpose of maintaining the vacuum, and the gap between the plasma and the antenna, the surface area of the antenna can be set freely, and the controllability of magnetic or electrostatic binding can be improved. As a result, the electromagnetic emission surface increases, and the combination of the antenna and the plasma becomes denser, and 579661 V. Description of Invention (ίο) The power supply efficiency can be improved and the diameter of the plasma can be increased. In addition, two, three, and four points of power supply points to the slot antenna can be set according to the shape of the slot, and the slot antenna can be effectively powered. Because the slot antenna is used as part or all of the vacuum container, and power is supplied to the floating island slot from one power supply point, there is no need to set the aforementioned conductor to the ground potential, that is, it is not necessary to insulate the aforementioned conductor. Furthermore, the frequency of the power supply to the slot antenna is set to be variable, and the setting position of the power supply point to the slot is changed according to the frequency, so that the transmission state of the power supply point to the slot antenna can be optimized. The slot can be connected at one point, or two or more can be connected in parallel or in series to improve the power supply efficiency and increase the diameter of the plasma. As described above, the plasma generating device and the plasma processing device according to the present invention can work as follows. (1) Due to the aforementioned slot antenna, the shape of the impedance of the plasma can be increased without increasing the size of the slot antenna at low power supply frequency, so that the area of plasma generation can be expanded, the concentration of plasma generation can be uniformized and To improve, to prevent the rise of electric power from the start of plasma lighting, to improve the magnetic coupling with the plasma, etc., to improve the state of the plasma, and to suppress the non-uniformity of the plasma caused by the electromagnetic wave interference in the vacuum container. (2) The above-mentioned conductor shape of the aforementioned slot antenna of the magnetic current source antenna and the shape of the aforementioned slot are a cylindrical surface structure, a spherical structure, a folded surface, etc. according to the use of a linear antenna based on the principle of Babinet The duality of the electromagnetic field is set to a shape structure that increases the density of the plasma generated internally, so that it is not necessary to increase the size of the slot antenna to prevent the impedance from decreasing, and the plasma is generated at a lower frequency.

Page 13 579661 V. Description of the invention (11) (3) Because the conductor of the aforementioned slot antenna is composed of part or all of the aforementioned vacuum container, and the plasma can be generated from a low power supply frequency, it does not require expensive high frequency oscillations Devices, matching boxes, etc., while reducing manufacturing costs and operating costs. (4) Because the conductor of the slot antenna is part or all of the foregoing vacuum container, in order to seal the vacuum container, there is no need to set a dielectric between the plasma and the slot antenna, so the interval between the plasma and the slot antenna can be arbitrarily set to suppress Related to the control of the penetration potential of the plasma lighting, the magnetic combination of the plasma and the antenna is improved, the combined area is increased, the power supply efficiency is improved, and the large diameter of the plasma can be achieved. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a plasma generating device and a plasma processing device according to the present invention will be described below with reference to the drawings. First Embodiment FIG. 1 is a structural diagram of a plasma generating device according to this embodiment, and specifically an example of an I C P polishing processing device for removing a photoresist during a semiconductor device manufacturing process. In the figure, the number 1 vacuum chamber (processing chamber), 2 series 02 gas supply source (gas supply mechanism), 3 series vacuum pump (exhaust mechanism), 4 series slot antenna (plasma generation mechanism), 5 series RF oscillation (High-frequency power supply, plasma generating mechanism), W series semiconductor wafer (substrate). As shown in Fig. 1, the plasma processing device includes: a vacuum chamber 1 (a vacuum container capable of controlling internal pressure), 02 gas supply source 2 (gas supply mechanism), slot antenna 4 (plasma generation mechanism), and RF oscillation Generator (high frequency power supply, plasma generator).

Page 14 579661 V. Description of the invention (12) An exhaust port 8 is provided in the lower part of the metal vacuum chamber 1, and a vacuum pump 3 is connected to the exhaust port 8 by an exhaust pipe 10 having a valve 9. A structure in which the exhaust of the vacuum chamber 1 by the operation of the vacuum pump 3 through the exhaust port 8 is approximately P a to several hundred P a is formed. A processing stage 11 for holding the semiconductor wafer W to be processed is provided in the lower part of the vacuum chamber 1, and a stage lifter 12 for adjusting the position (height) of the processing stage 11 in the vacuum chamber 1 is provided. Here, the internal shape of the gas introduced into the vacuum chamber 1 can be selected from cube shape, cylindrical shape, hemispherical shape, structure with folded surface, etc., which is introduced into the vertical, horizontal, high, and Dimensions such as angle, radius, and length of one side are set to values ranging from a few centimeters to tens of meters. A gas introduction port 13 is provided in the upper part of the vacuum chamber 1, and a 02 gas supply source 2 formed by connecting a 02 gas bottle and the like through a gas introduction pipe 16 having valves 14 and 15 is provided. The structure in which the 02 gas of the photoresist removal processing gas is introduced into the vacuum chamber 1 from the 02 gas supply source 2 is constructed. Further, a purge gas introduction pipe 17 is connected to the gas introduction pipe 16 in the middle, and N2 gas and the like used in the vacuum chamber 1 are introduced therethrough. A slot antenna 4 for exciting electromagnetic waves in the vacuum chamber 1 to generate plasma P is provided in the upper part of the vacuum chamber 1, and an opening 1a for transmitting electromagnetic waves transmitted from the slot antenna 4 is provided. The slot antenna 4 is a conductor made of, for example, flat aluminum. As shown in Figs. 1 and 2, the opening 1a of the vacuum chamber 1 is covered to form a part of the vacuum container 1 capable of controlling the internal pressure. A closed mechanism such as a 0 ring 1 b is provided between the slot antenna 4 and the vacuum chamber 1 around the opening 1 a, and the opening 1 a is provided with a penetrating potential adjustment and an impurity contaminated by the antenna on the surface of the slot antenna 4 which is knocked out by the plasma. Proliferation prevention

Page 15 579661 V. Description of the invention (13) Dielectric material 18 made of quartz and ceramic. An aluminum shield 4a is provided on the upper side of the slot antenna 4 to cover the slot antenna 4. A slot 41 is provided in the central portion of the slot antenna 4 in plan view, and a power supply point 4 3, 4 4 for the slot antenna 4 is provided near the slot 41. -The groove 4 1 is as described later, and can form a plasma / impedance shape even at a low power supply frequency. The opening of the groove 4 1 is shown in Figure 2 and the outside of the vacuum chamber 1 is located: The position covers the groove 4 1 as viewed from the plane. Continuously arranged sealed dielectric to slot 41: mass (dielectric) 2 5. Dielectrics made of quartz and ceramics, hermetically sealed dielectrics 25, and 0-rings 4b, such as 0-rings 4b, are located on the surface of the slot antenna 4 outside the slot 41 as viewed in plan, and together they become a sealing mechanism for maintaining the vacuum of the sealed vacuum chamber 1. As shown in FIG. 2, a power supply point 4 3, 4 4 can be set inside the slot 41, for example, the slot antenna 4 can be powered from the inside of the slot 41. Therefore, when the plasma P is generated from the slot antenna 4 and a high-frequency current is distributed on the surface side, the effect of effectively transmitting the power supplied to the slot antenna 4 to the plasma P can be obtained. As shown in FIG. 1, the slot antenna 4 is installed in the vacuum chamber 1 in a state where the insulating portion 1c of the vacuum chamber 1 equipped with the 0 ring 1b is insulated from the vacuum chamber 1. The power supply point 4 3 of the slot 41 is sequentially connected to the matching box 2 6 and the RF oscillator 5, and the power supply point 4 4 is grounded to a ground potential. As shown in FIG. 1, an aluminum shield 4 a of a box conductor is arranged above the slot antenna 4, and a dielectric 4 c made of quartz, ceramic, or the like for the aluminum shield 4 a is arranged in a state of being insulated from the slot antenna 4. According to this structure, the electromagnetic field emitted by the slot 41 cannot reach φ to the top and only to the bottom, which can effectively send electromagnetic waves into the vacuum chamber 1 and can insulate the slot antenna 4. In addition, the aluminum shield 4a and the vacuum chamber 1 are connected to each other to prevent these internal electromagnetic waves from leaking to the outside. Insulator 4c if aluminum shield 4a and slot

Page 16 579661 V. Description of the invention (14) The antenna 4 can be insulated, or it can be omitted. The power supply point 43 inside the slot 41 penetrates the aluminum shield 4a in an insulated state, and is powered by the coaxial tube subsequent to the matching box 26 and the RF oscillator 5. The processing stage 11 is also connected to the stage bias matching box-27 and RF oscillator 28 in order. These RF oscillators 5 and 28 can oscillate a number of KHz ~ 100: a low power supply frequency of κ Η z, preferably industrial frequency 1 3. 5 6 Κ Η z:, or an integral multiple of 27.12 KHz, Or the frequency selected from 40.68 KHz: When the plasma processing apparatus having the above structure is used, for example, to perform a polishing process of photoresist, the vacuum chamber 1 is evacuated to a number of MTorr · ~ Torr with a vacuum pump 3, and then 02 gas is introduced and the RF oscillator 5 High frequencies are applied to the slot antenna® 4. Then, electromagnetic waves are emitted from the slot 41 of the slot antenna 4 and the plasma P is generated in the vacuum chamber 1. The oxygen generated from the dissociation of the 02 gas and the plasma P and the photoresist on the semiconductor wafer W cause a chemical reaction and decomposition. , Gasification to remove photoresist. The plasma processing device of this embodiment is provided on a single conductor plate (slot antenna) 4. As will be described later, the slot 41 is formed into a shape that can generate plasma impedance even at a low power supply frequency, and a plurality of slots are arranged in parallel When the antenna is shaped, the form of the electromagnetic emission surface is also increased. Since the electromagnetic field intensity distribution in the vacuum chamber 1 can be made uniform, it is easy to control the uniformity of the plasma density, and it is possible to maintain the uniformity of the plasma density to achieve a larger diameter of the plasma. As a result, according to the plasma processing apparatus of this embodiment, a large-diameter semiconductor wafer can be uniformly processed, and it can be a plasma processing apparatus with a good φ-to-large-caliber conversion. Since the slot antenna 4 is a planar antenna, the slot antenna 4 is a part of the vacuum chamber 1, and the antenna conductor is a cylindrical surface structure and a hemispherical structure.

Page 17577966 V. Description of the invention (15) Fabrication, folding surface, etc., increase the density of the plasma P generated internally, and appropriately select the shape of the slot 41, so that the power supply point 4 3 of the slot antenna 4 is At one place, and the conductor is made to ground potential. Therefore, it is not necessary to set a dielectric between the slot antenna 4 and the vacuum container 1 for the purpose of maintaining the vacuum, and the gap between the electro-plasma P and the slot antenna 4 can be set freely. The surface area of the slot antenna 4 can improve the plasma P * Controllability in combination with the magnetic or electrostatic of the slot antenna 4. As a result, the electromagnetic emission surface is increased, and the combination of the slot antenna 4 and the plasma P is dense, so that the power supply efficiency can be improved and the diameter of the plasma P can be increased. Figures 3 to 33 show the paired slot antenna (a) and the linear antenna (b) with duality. Slot 4 1 is a pair of rectangular ® shaped basic grooves 4 1 formed by the conductors of the planar slot antenna 4 shown in FIG. 3 (a), using the electromagnetic field between linear antennas based on the principle of Babinet According to the analysis of the linear antenna 4 Γ shown in FIG. 3 (b), it has the unity of phase geometry and still maintains the characteristics of the magnetic current source antenna. As shown in FIGS. 4 to 33, it is transformed into a two-dimensional structure. Or it has a three-dimensional structure and has a shape that can generate plasma impedance even at a low power supply frequency. Here, the power supply points 23, 24 of the slot antenna 4 are set to two to four, or the power supply point 23 is set to the ground potential by the shape of the slot 41 set separately. Thereby, the impedance of the slot antenna 4 and the magnetic binding property with the electrocondensation are improved. Configuration Examples _ Each configuration example is described below. In the structural example shown in Fig. 4, the trough 41 is formed in a horizontally long, slightly sloping shape. A power supply point 4 3 is provided near the bottom of the bottom, and a power supply point 4 4 is provided on the outside. This construction example is related to

Page 18579661 V. Description of the invention (16) In comparison with the basic shape shown in FIG. 3, the length dimension can be set to be slightly less than half. The structural example 4 shown in FIG. 5 is formed in a horizontally long shape:, The central position iL δ is also set to the power supply point 4 3 '44. This structural example is also the same as that shown in Fig. 4 and compared with the basic shape shown in Fig. 3, and its length can be set to slightly--half or less. In the structural example shown in Fig. 6, the groove 41 is formed into a square vortex with a slightly thunder-like pattern, and its central position is fL, and δ is also provided with a power supply point 2 3, 2 4. In this structural example, by setting the number of curved parts of one slot 41, the required length of slot 41 can be increased to increase the electromagnetic emission surface, and the planar density of slot 41 can be increased, which can increase the density of the generated plasma P. , And can be obtained in a plane view of the rectangular shape of a slightly uniform plasma P. Therefore, when the planar shape of the vacuum chamber 1 is rectangular, the density of the plasma P inside the vacuum chamber 1 can be made uniform. The structural example shown in FIG. 7 is that the groove 4 1 is formed to connect three-quarters of the arcs in reverse to each other. S-shaped, with a power supply point 2 3, 24 in the center. This structure example has no curved parts, so it can improve the uniformity of the intensity density of the emitted radio waves. Compared with the basic shape shown in Figure 3, its length can be measured— It is determined to be slightly less than half. Fig. 8 'and Fig. 9 show that the groove 41 in the structural example shown in Fig. 7 is formed in a shape that rotates around the power supply points 4 3 and 44 from the structural example shown in Fig. 7. Here, the structural example of FIG. 8 is formed into a shape connecting a semi-circular arc and a four-point circular arc with the diameter of the semi-circular arc as a radius, and the structural example of FIG. 9 is formed into a structural example of FIG. And connect the shape of the semi-circular arc with the diameter of the 4-point arc as the radius. These construction examples exhibit the same performance as that of the construction example shown in FIG. 7, and can further increase the planar density of the groove 41, and improve the uniformity of the intensity density of the transmitted radio waves.

Page 19 579661 V. Description of the invention (17) The uniformity of degree density is improved. The structural examples shown in Fig. 4 to Fig. 9 described above can be used for the RF number when the representative length of the slot antenna 4 is a series of number 10 cm (〇rder) depending on the increase in impedance and the magnetic combination with the plasma. Application of plasma generation at lower RF frequency of 10 Μ Η z series. In the structural example shown in FIG. 10, the trough 41 is formed in a cross shape, and four power supply points 43, 43, 44, 44 are provided at the center position. Here, the power supply points 43 and 43 are connected to the matching box 26 and the RF oscillator 5. This structural example has a structure in which two linear grooves 4 1 shown in FIG. 3 are connected in parallel, because the output is larger and closer to each of the power supply points 4 3, 4 3, 4 4, 4 4 than in parallel to the two grooves 4 1 in parallel, Therefore, there is no need to install a phase corrector or the like. The structural examples shown in FIGS. 11 to 13 are the same as the structural example shown in FIG. 10, and the grooves 41 are formed into a cross shape, and similar to the structural examples shown in FIGS. 6 to 9, the grooves 1 are formed in a slightly thunder pattern or Swirl into the shape around the power points 4 3, 4 4. This structural example is the same as the structural example shown in FIG. 10, and has a structure in which two linear grooves 4 1 shown in FIG. 3 are connected in parallel. The output is increased and the groove 4 can be increased in the same way as the groove shown in FIGS. 6 to 9. The planar density of 1 and the intensity density of the transmitted radio waves are both improved, and the uniformity of the intensity density can be improved. The structural examples shown in Figures 1 and 15 are similar to the structural examples shown in Figures 7 and 12 in the form of a circular arc, but the front end is extended and connected to the diameter of the semicircular arc near the power supply points 4 3, 4 4 It is the arc of the radius. In this structural example, since there is no curved portion, the uniformity of the intensity and density of the emitted radio waves can be improved, and because the shape is circular, so when the planar shape of the vacuum chamber 1 is circular, the density of the plasma P inside the vacuum chamber 1 can be increased. Homogenize to the periphery.

Page 579661

V. Description of the Invention (18) Figure 16 is the basic shape of the previous folding groove-shaped antenna. This rectangular ring connecting the ends of the grooves has a groove outer conductor and a groove inner conductor. The structural example j shown in FIG. 14 is an outer conductor and two middle conductors. The grooves 41 are arranged as a Tai Chi pattern. Structure 〇 Because the conductor is divided into three parts, the power supply point can be two-pole power supply or three-pole power supply. The structural examples shown in Figure 17 and Figure 18 are the same as the structural examples in Figure 16 and are the groove 4 1 and the outer conductor 41 The floating island type in which the inner conductor exists has a round shape in FIG. 17 and a square shape in FIG. 18. This structural example is the same as the structural example of FIG. 9 and FIG. 1. The improvement of the intensity density uniformity can be achieved, and although the power supply point 4 3 is connected to the matching box 26 \ RF oscillator 5, the power supply point 4 4 may not be set. At this time, the slot antenna 4 is the most The outside can be set to the ground potential. Therefore, the slot antenna 4 constituting a part of the vacuum chamber 1 does not need to consider the insulation property, and the structure can be simplified, and the manufacturing cost can be reduced. In addition, the configuration examples of FIG. 17 and FIG. Box-type labyrinth, this structure can earn large impedance in a small area. The structure example of FIG. 19 also forms the structure example shown in FIG. 7 into the above floating island type. ≫ Has the same characteristics as above. Figures 14 to 19 In the structure example, the slot antenna 4 can be used in a self-resonant state. If the representative length of the slot antenna 4 is a number of 10 common steps, it is suitable for a slot with a higher frequency of the RF number 10 0 Μ Η z series. Use of antennas. The construction examples shown in Figs. 20 to 25 are those in which the conductor shape of the slot antenna 4 is formed. Page 21 579661 V. Description of the invention (19) is a three-dimensional cylindrical shape. The structural example shown in FIG. 20 is a modified example of the structural example shown in FIG. 3, the structural example shown in FIG. 21 is a modified example of the structural example shown in FIG. 16, and the structural example shown in FIG. 22 is a structure shown in FIG. The structural example shown in FIG. 23 is a modified example of the structural example shown in FIG. 9, the structural example shown in FIG. 24 is a modified example of the structural example shown in FIG. 10, and the structural example shown in FIG. FIG. 11 is a modification of the structural example. The structural examples shown in Figs. 20 to 25 have the same characteristics as the basic structural examples of the deformation shown in Figs. 3 to 19, and because the plasma is generated in this cylinder, the density of the plasma can be generated in the space. This is more than the planar shape (2-dimensional structure) shown in Fig. 3 to Fig. 19. The structural examples shown in Figs. 26 to 29 are those in which the conductors constituting the slot antenna 4 are formed into a three-dimensional spherical shape. The structural example shown in FIG. 2 is a modified example of the structural example shown in FIG. 9, the structural example shown in FIG. 7 is a modified example of the structural example shown in FIG. 10, and the structural example shown in FIG. 2 is shown in FIG. 12. A modification of the structure example, the structure example shown in FIG. 2 to 9 is a modification example of the structure example shown in FIG. 17. The structural examples shown in FIG. 2 to FIG. 29 have the same characteristics as the basic structural examples of the deformation shown in FIG. 3 to FIG. 19, and because the plasma is generated in this cylinder, the density of the plasma can be generated in the space. The increase in the planar shape (two-dimensional structure) shown in Figs. 3 to 19 can increase the density of plasma generation in space more than the structural examples shown in Figs. 20 to 25. In particular, the structural examples shown in FIGS. 28 and 29 can increase the density of the plasma P, improve the insulation of the slot antenna 4, and the structural characteristics of the construction material of the vacuum chamber 1 are extremely excellent.

Page 22 579661 V. Description of the invention (20) The structural examples shown in FIGS. 30 to 33 are those in which the conductors constituting the slot antenna 4 have a two-dimensional structure and are combined into a three-dimensionally bent plane shape. The structural example shown in FIG. 3 is a modified example of the structure shown in FIG. 3. The slot antenna 4 that is folded into two planes on the fold line L is provided with a slot 41 that crosses the fold line L, and a power point 4 is provided on the fold line L 3. 4 4 of them. This structural example has the same characteristics as the basic structure deformed as shown in FIG. 3, and can increase the density of plasma generation spatially than the planar shape (two-dimensional structure) shown in FIG. The structural example shown in FIG. 3 is a modified example of the structure shown in FIG. 5. The conductor 4 of the slot antenna 4 folded into two planes on the fold line L is provided with a groove 41 across the fold line L, and a power supply point 4 is provided on the fold line L 3. 4 4 of them. This structural example has the same characteristics as the modified basic structural example shown in FIG. 5, and can increase the plasma generation density in space than the planar shape (two-dimensional structure) shown in FIG. 5. The structural example shown in FIG. 3 is a modified example of the structure shown in FIG. 14. The groove 41 is formed in a square shape, and the slot antenna 4 folded into two planes on the fold line L is arranged across the fold line L and on the fold line L. Configure power supply points 4 3, 4 and 4. This structural example has the same characteristics as the basic structural example of the deformation shown in FIG. 14, and has the same characteristics as those with a square shape, and can make the plasma generation density spatially larger than the planar shape shown in FIG. Construction) increase. Examples of the structure shown in FIGS. 30 to 32 can be used in a cube-shaped vacuum chamber 1 in combination with a slot antenna 4 of another structure provided in the central portion of the cube-shaped vacuum chamber 1 to generate electricity. Large diameter of plasma and uniform plasma density. The structural example shown in FIG. 3 is a modified example of the structure shown in FIG. 10. The slot antenna is folded at the fold line L 2 into a tapered 4 plane. The conductor arrangement groove 41 is located at the vertex.

579661 V. Description of the invention (21) This structural example has the same characteristics as the basic structure of the deformation shown in Fig. 10, and can increase the density of plasma generation in space than the planar shape (two-dimensional structure) shown in Fig. 10. The structural examples shown in FIG. 4 to FIG. 3 are examples of changes in the shape of the slot antenna related to the present invention. The shape of the aforementioned conductor and the shape of the aforementioned slot antenna of the magnetic current source antenna are based on the Barbinite principle. The duality of the electromagnetic field between the linear antennas is set to a shape structure that increases the density of the plasma generated internally. If it has a shape that can also generate the impedance of the plasma at a low power supply frequency, other structures are also possible. Deformation can also be applied to various other forms. According to this embodiment, it is possible to provide a form of a slot antenna that can prevent a drop in impedance without increasing the size of the slot antenna even at a low frequency, and can improve the combination of plasma and magnetic. Therefore, it is possible to use a transmitter that generates a long-wave electromagnetic wave, and also suppress the non-uniformity caused by the plasma interference caused by the electromagnetic wave in the vacuum container. Since there is no need to set a dielectric between the plasma and the slot antenna in order to seal the vacuum container, the interval between the plasma and the slot antenna can be set arbitrarily, and the controllability of the penetration potential related to the plasma lighting can be suppressed. The magnetic combination of the antenna is improved, the combined area is increased, the power supply efficiency is improved, and the diameter of the plasma can be increased. The power supply frequency of the slot antenna 4 in this embodiment is below 100 MHz, but it is not limited to this range. The electromagnetic wave generated may be a high frequency of the UHF band. At this time, the floating island slot antenna 4 described above , Can constitute the unconnected part of the power supply point 43 to the ground potential, the dielectric 1 c,

Page 24 579661 V. Description of the invention (22) 4 c and other structures. The RF oscillator 5 is set to a variable oscillation frequency, and the frequency of the power supplied to the slot antenna 4 is set to be variable. At this time, as the power supply frequency changes, the power supply points 4 3 and 4 of the slot antenna 4 are moved. Setting the setting position of 4 can optimize the electromagnetic wave intensity and other states emitted by the slot antenna 4, and seek to increase the diameter of the plasma generation, and to increase the density, etc., to improve the generation state of the plasma. In addition to the above structure, the structure can be changed within the scope of the subject matter of the present invention, and a structure in which a vacuum container is sealed by a dielectric 18 can be applied. Two or more slots 41 can be formed in a slot antenna and connected in series or parallel. The structure is a structure in which the aluminum shield 4a and the slot antenna 4 are integrally formed. Brief Description of the Drawings Figure 1 is a front view of one embodiment of a plasma generating device and a plasma processing device according to the present invention. FIG. 2 is a plan view near the trench of FIG. 1. Figure 3 is a plan view of a slot antenna. Fig. 4 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 5 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 6 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 7 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. FIG. 8 is a tank of a plasma generating device and a plasma processing device related to the present invention.

579661 V. Explanation of the invention (23) Plane structure example. Fig. 9 is a plan view showing a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. FIG. 10 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. FIG. 11 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 12 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 13 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 14 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 15 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Figure 16 is a plan view of an example of a 6-series folded slot antenna. Fig. 17 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. FIG. 18 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 19 is a plan view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention. Fig. 20 is a perspective view of a structural example of a slot antenna of a plasma generating device and a plasma processing device according to the present invention.

579661 V. Description of the invention (24) Fig. 21 is a perspective view of a structural example of an electric antenna according to the present invention. Fig. 22 is a perspective view of an example of the construction of an electrical antenna according to the present invention. Fig. 23 is a perspective view showing an example of the construction of the electrical antenna according to the present invention. Fig. 24 is a perspective view of a structural example of the electric antenna according to the present invention. Fig. 25 is a perspective view showing an example of the construction of an electric antenna according to the present invention. Fig. 26 is a perspective view showing an example of the construction of an electric antenna according to the present invention. Fig. 27 is a perspective view showing an example of the construction of an electric antenna according to the present invention. Fig. 28 is a perspective view showing an example of the construction of the electrical antenna according to the present invention. Fig. 29 is a perspective view of a structural example of the electric antenna according to the present invention. Fig. 30 is a perspective view of a structural example of the electric antenna according to the present invention. Fig. 31 is a perspective view of a structural example of the electric antenna according to the present invention. Fig. 32 is a perspective view of a structural example of the electric antenna according to the present invention. Trough plasma generating device and plasma processing device, Trough plasma generating device and plasma processing device, Trough plasma generating device and plasma processing device, Trough plasma generating device and Plasma processing device, Trough plasma generating device, and Plasma processing device slot. Trough plasma generating device and plasma processing device, Trough plasma generating device and plasma processing device, Trough plasma generating device and plasma processing device, Trough plasma generating device and Plasma processing device, Trough plasma generating device, and Plasma processing device slot. Trough of pulp generating device and plasma processing device Trough of plasma generating device and plasma processing device

Page 27 579661 V. Description of the invention (25) Fig. 3 3 is the groove shape of the plasma generating device and the plasma processing device related to the present invention. 34 is a front view of a previous plasma generating device. Description: • Vacuum chamber (processing chamber) • 02 Gas supply source (gas supply mechanism). Vacuum pump (exhaust mechanism). Slot antenna (plasma generation mechanism) 2 8 ··· RF oscillator (high frequency power supply, electricity (Plasma generation mechanism) • Semiconductor wafer (substrate). Exhaust ports 14, 1 5… valve 10.… exhaust pipe 1 1. • • Processing stage 12. • • Stage lifter 13. • • Gas introduction a 16 · • • Gas introduction pipe 17 · • • Clear gas introduction pipe 18. • • Dielectric 25. • • Sealed dielectric (dielectric) 26.… Matching box 41. • • Slots 23, 24, 43 ', 44 .. Power point

Claims (1)

579661 Case No. 89106543 said amended Fengliu, patent application scope 1. A plasma generating device, which includes: a vacuum container, which can control the internal pressure; a gas supply mechanism to supply gas to the vacuum container; and a plasma generation mechanism, to An electromagnetic wave is emitted in the aforementioned vacuum container through which gas is introduced to generate a plasma; the plasma generating mechanism includes: a slot antenna; a slot for emitting electromagnetic waves is formed in the conductor; and a slot-shaped opening at a magnetic field parallel to the opening surface It is offset to zero in the table; and AC power is supplied to the slot antenna; the slot antenna is a shape that can generate plasma impedance when it has a low power supply frequency, compared with a wavelength equal to the length of the vacuum container representative The frequency of the electromagnetic wave, the low power supply frequency is small. 2. For example, the plasma generating device of the scope of application for the patent, wherein the aforementioned slot antenna of the magnetic current source antenna uses the duality of the electromagnetic field between the linear antennas according to the principle of Babinet to change the aforementioned conductor shape and The groove shape is set to a two-dimensional structure or a three-dimensional structure. 3. For example, the plasma generating device of the scope of patent application, in which the aforementioned conductor shape and the aforementioned slot shape of the aforementioned slot antenna of the magnetic current source antenna use the duality of the electromagnetic field between the linear antennas based on the Barbinite principle. The shape is set to increase the density of plasma generated inside. 4. For the plasma generating device in the second item of the patent application, wherein the aforementioned conductor shape and the aforementioned slot shape of the aforementioned slot antenna of the magnetic current source antenna use the duality of the electromagnetic field between the linear antennas based on the Barbinite principle. The shape is set to increase the density of plasma generated inside. 5. As for the plasma generating device in the scope of application for patent item 1, wherein the conductor of the aforementioned slot antenna is part or all of the aforementioned vacuum container. O: \ 63 \ 63586-920509.ptc P.30 579661 _Case No. 89106543_ Years and months Amendment_ VI. Application for patent scope 6. For example, the plasma generation device of the second scope of patent application, where the aforementioned slot antenna The conductor is constructed as part or all of the aforementioned vacuum container. 7. The plasma generating device according to item 3 of the scope of patent application, wherein the conductor of the aforementioned slot antenna is formed as part or all of the aforementioned vacuum container. 8. The plasma generating device according to item 4 of the scope of patent application, wherein the conductor of the aforementioned slot antenna is formed as part or all of the aforementioned vacuum container. 9. The plasma generating device according to item 1 of the scope of patent application, wherein the power supply points to the aforementioned slot antenna are set at 2, 3, and 4; in addition, the aforementioned power supply point is set to the emission of the aforementioned slot antenna. Best position. 10. The plasma generating device according to item 2 of the scope of patent application, wherein the power supply points to the aforementioned slot antennas are set at two, three, and four locations, and in addition, the aforementioned power supply points are set to the emission of the aforementioned slot antennas. Best position. 1 1. The plasma generating device according to item 3 of the scope of patent application, wherein the power supply points to the aforementioned slot antenna are set at 2, 3, and 4 'in addition' the aforementioned power supply points are set to the aforementioned slot antenna The best position for launching. 1 2. The plasma generating device according to item 4 of the scope of patent application, wherein the power supply points to the aforementioned slot antennas are set at 2, 3, and 4; furthermore, the aforementioned power supply points are set to the aforementioned slot antennas. The best position for launching. 1 3. The plasma generating device according to item 5 of the scope of patent application, wherein the power supply points to the aforementioned slot antennas are set at 2, 3, and 4; in addition, the aforementioned power supply points are set to the aforementioned slot antennas. The best position for launching. 1 4. The plasma generating device according to item 6 of the patent application scope, wherein the power supply points to the aforementioned slot antennas are set at 2, 3, and 4; in addition, the aforementioned power supply points are set to the aforementioned slot antennas. The best position for launching. O: \ 63 \ 63586-920509.ptc Page 31 579661 _Case No. 89106543_ Year Month__ VI. Application for patent scope 1 5. For example, for the plasma generator of item 7 of the patent scope, which is directed to the aforementioned groove shape The power supply points of the antennas are set at two, three, and four locations. In addition, the power supply points are set at the optimal positions for the transmission status of the slot antenna. 16. The plasma generating device according to item 8 of the scope of patent application, wherein the power supply points to the aforementioned slot antennas are set at two, three, and four locations. In addition, the aforementioned power supply points are set to the aforementioned slot antennas. The best position for launching. 1 7. The plasma generating device according to item 1 of the scope of the patent application, wherein the power supply point to the slot antenna is set at 1 and the conductor is set to the ground potential. In addition, the power supply point is set to the slot shape. The best position for the antenna's emission status. 1 8. The plasma generating device according to item 2 of the scope of the patent application, wherein the power supply point to the slot antenna is set at 1 and the conductor is set to the ground potential. In addition, the power supply point is set to the slot shape. The best position for the antenna's emission status. 1 9. The plasma generating device according to item 3 of the scope of the patent application, wherein the power supply point to the slot antenna is set at 1 and the conductor is set to the ground potential. In addition, the power supply point is set to the slot shape. The best position for the antenna's emission status. 20. The plasma generating device according to item 4 of the scope of patent application, wherein the power supply point to the slot antenna is set at 1 and the conductor is set to the ground potential. In addition, the power supply point is set to the slot antenna. The best position for launching. 2 1. The plasma generating device according to item 5 of the scope of patent application, wherein the power supply point to the aforementioned slot antenna is set at 1 and the aforementioned conductor is set to ground O: \ 63 \ 63586-920509.ptc Page 32 579661 _Case No. 89106543_Year_Month__ VI. Patent Application Potential. In addition, the aforementioned power supply point is set to the optimal position of the aforementioned slot antenna's emission state. 2 2. The plasma generating device according to item 6 of the scope of the patent application, wherein the power supply point to the slot antenna is set at one point and the conductor is set to the ground potential. In addition, the power supply point is set to the slot shape. The best position for the antenna's emission status. 2 3. The plasma generating device according to item 7 of the scope of the patent application, wherein the power supply point to the slot antenna is set at one point and the conductor is set to the ground potential. In addition, the power supply point is set to the slot shape. The best position for the antenna's emission status. 2 4. The plasma generating device according to item 8 of the scope of the patent application, wherein the power supply point to the slot antenna is set at one point and the conductor is set to the ground potential. In addition, the power supply point is set to the slot shape. The best position for the antenna's emission status. 25. The plasma generating device according to any one of claims 1 to 24 in the scope of patent application, wherein the aforementioned groove is provided at one place. 2 6. The plasma generating device according to any one of claims 1 to 24 of the scope of patent application, wherein the aforementioned tanks are connected in parallel or in series at two or more places. 2 7. A plasma processing device, comprising: a processing chamber, which contains a substrate therein and processes the substrate with a plasma; a gas supply mechanism that supplies a processing gas to the processing chamber; a plasma generation mechanism that supplies a processing gas to the The aforementioned processing chamber emits electromagnetic waves to generate a plasma; and an exhaust mechanism for exhausting the aforementioned exhaust in the processing chamber to a required pressure; characterized in that the aforementioned plasma generating mechanism includes: a slot antenna that emits electromagnetic waves; O: \ 63 \ 63586-920509.ptc Page 33 579661 _Case No. 89106543_Year_Month__ Sixth, the scope of the patent application slot is formed in the conductor, the magnetic field parallel to the opening at the slot-shaped opening is inside the watch The offset becomes zero; and the AC power is supplied to the slot antenna; the slot antenna has a shape that can generate the impedance of the plasma when it has a low power supply frequency, compared with the frequency of an electromagnetic wave having a wavelength equal to the representative length of the vacuum container The low power supply frequency is small. O: \ 63 \ 63586-920509.ptc Page 34