JPH01283359A - Plasma treatment apparatus - Google Patents

Abstract

PURPOSE:To easily connect a plasma production chamber and a cavity resonator into service condition by detachably constituting both in a state where mutual functions are maintained. CONSTITUTION:A plasma production chamber 6 is held in a vacuum atmosphere, where a plasma is generated and maintained. Microwave energy is stored and increased in a cavity resonator 1. The plasma formation chamber 6 and the cavity resonator 1 are detachably constituted in a state where mutual functions are maintained. A slit is provided on the plasma production chamber-side of the cavity resonator, and a member transmitting microwaves and keeping the plasma production chamber in a vacuum state is disposed on the plasma production chamber side of the slit. Further, a second plasma-generating means is provided to the inside of the plasma production chamber. By this method, the plasma production chamber and the cavity resonator can be easily connected into service condition.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a plasma processing apparatus used for manufacturing semiconductor devices using low-temperature plasma, and particularly relates to various technologies such as CVD, etching, sputtering, eye-sonking, etc. The present invention relates to a plasma processing bag f suitable for high-speed processing.

[Conventional technology]

Devices that use low-temperature plasma can be roughly divided into those that use technology to generate plasma by applying a high-frequency voltage of about 10 KHz to 30 MH2 to one side of parallel plate electrodes in a vacuum (Semiconductor Research 18; Pi2? ~Pi70.

Semiconductor Imaging 19; P225-P267) and 2.4
Some use a technique of introducing 501-Iz microwaves into a vacuum chamber to generate plasma. Conventionally, among these techniques, the technique using parallel plate electrodes has been most commonly used.

On the other hand, with the miniaturization of semiconductor devices, it has become a problem that device characteristics are affected by ion bombardment generated during plasma processing. Furthermore, there is a demand for increasing processing speed in order to improve processing capacity.

When increasing the processing speed, it is not sufficient to simply increase the density of the plasma or the concentration of radicals (active particles just before ionization). Ion energy plays an important role in dry etching by plasma processing and plasma CVD.

In the case of dry etching, if the energy of the ions is too high, the underlying film may be etched away, the crystal structure may be affected, and device characteristics may deteriorate. On the other hand, if it is too small, the polymer formed during etching will not be removed sufficiently and the etching rate will decrease.

Or, conversely; no protective film is formed by the j41J mer.

The sides of the pattern are etched and the dimensions of the pattern are etched.
Problems arise, such as the condition getting worse every time.

In plasma CVD as well, ion energy influences film formation, such that when the ion energy is low, the film composition becomes coarse, and when the ion energy is high, the film composition becomes dense.

Therefore, high density plasma and appropriate control of ion energy are essential for plasma treatment of intervening materials. As well-known examples, techniques using microwaves have been proposed, as described in Japanese Patent Laid-Open No. 56-13480 and Japanese Patent Laid-Open No. 56-96841.

When generating plasma using microwaves.

Even if microwaves generated by a magnetron are emitted into a low-pressure plasma generation chamber, the electric field strength of the microwaves is insufficient, so sufficient energy cannot be supplied to the electrons.
Generating plasma is difficult. therefore,
In order to generate plasma using microwaves, l/'C matches the frequency of the microwave with the frequency of the cyclotron, in which electrons rotate in a plane 1 meter perpendicular to the field, and supplies energy to the electrons by creating a resonance state. There are two methods: one is to radiate microwaves into a cavity, the amplitude of the microwaves is increased, the electric field strength is strengthened, and the other is to supply energy to the electrons. The former is the technology described in Japanese Patent Application Laid-Open No. 56-13480, which uses magnetic field microwaves or WOR
(Blectron Cyclotron Re5on
ance) law. The latter is published in Japanese Patent Application Publication No. 56-9.
This is a technique described in Japanese Patent No. 6841.

In the plasma generated by the micro-e, since energy is directly supplied to the electrons by the microwave, the inter-sheath voltage formed between the plasma and the substrate hardly changes. Therefore, by applying a high frequency voltage to the electrode on which the substrate is placed and arbitrarily controlling the voltage between the sheaths, it is possible to control the high plasma density and appropriate ion energy required for high speed.

[Problem to be solved by the invention]

As mentioned earlier, ion energy plays an important role in plasma processing.

Among the conventional technologies, the EOR method is disclosed in Japanese Patent Application Laid-Open No. 56-1648.
As described in Publication No. 0, when a high frequency voltage is applied to the electrode on which the substrate is placed, since there is no ground electrode on the opposite side of this electrode, the high frequency current flows between the surrounding processing chamber and the substrate. There was a problem in that the effect of the ion energy on the substrate was strong around the substrate and weak at the center, making it impossible to process the entire substrate under uniform conditions.

In addition, in the method using a cavity resonator, the structure generates plasma inside the cavity, so when plasma is generated, the wavelength of the microwave changes depending on the density of the plasma, so the resonance condition is not satisfied and the plasma is generated. The problem was that it became unstable.

That is, until plasma is generated, the resonance condition is satisfied, so the electric field strength of the microwave increases and plasma is generated. However, when plasma is generated and the plasma density increases, the wavelength of the microwave changes, the resonance condition is no longer satisfied, and the electric field strength decreases. Then, the supply of energy to the electrons decreases, and the plasma density decreases. When the plasma density decreases, the resonance condition is satisfied and the plasma density increases again. Because of this phenomenon, it has been difficult to generate plasma stably.

However, in order to control the energy of ions entering the substrate from these plasmas, there is still the problem that if a high-frequency voltage applying electrode is installed inside the cavity resonator, microwave reflection will occur and the plasma will become even more unstable. was there.

As the etching process is repeated many times, some of the reaction products adhere to the inner wall surface of the plasma generation chamber, gradually deteriorating the etching characteristics, or becoming foreign matter that adheres to the object to be processed, resulting in a decrease in yield. Therefore, it is necessary to periodically open the plasma generation chamber and clean the inside. In contrast, conventional technology requires maintenance of the plasma generation chamber.

No consideration was given to workability and reproducibility during inspection.

An object of the present invention is to solve the problems of the prior art described above, to improve workability and reproducibility during maintenance and inspection of a plasma generation chamber, and to uniformly distribute ion energy incident on a processing object over the entire surface of the processing object. This method greatly improves the stability of the plasma and prevents thermal deformation of the plate provided with the slits, and also allows the resist film on the processing target to be ashed, and the ashing processing can be performed accurately. The object of the present invention is to provide a plasma processing apparatus that can obtain the desired results.

[Means to solve the problem]

In order to achieve the above object, the present invention includes a plasma generation chamber that is maintained in a vacuum atmosphere, generates plasma and maintains the generated plasma, and a cavity resonator that accumulates and increases microwave energy. The plasma generation chamber and the cavity resonator are configured to be removable while maintaining their functions.

On the plasma generation chamber side of the cavity resonator, a slit for supplying microwaves from the cavity resonator to the plasma generation chamber is provided at a position facing an electrode installed in the plasma generation chamber.

A member made of a material that transmits microwaves and that maintains the plasma generation chamber in a vacuum state is disposed on the plasma generation chamber side of the slit provided in the cavity resonator.

The member for maintaining the plasma generation chamber in a vacuum state is made of glass made of quartz or ceramic made of alumina.

A second 7° plasma generation means is provided inside the plasma generation chamber.

The second plasma generating means includes a high voltage generating power source and a pair of electrodes connected to the high voltage generating power source.

The pair of electrodes includes a stage for mounting a substrate and a cavity resonator.

As the high voltage generating power source, an AC power source or a DC power source including a high frequency is used.

[Effect]

In the present invention, since the granuma generation chamber and the cavity resonator are configured to be removable while maintaining their functions,
At the time of maintenance inspection inside the plasma generation chamber, the plasma generation chamber can be easily opened, and the plasma generation chamber and the cavity resonator can be easily coupled to the operating state without changing the resonator characteristics.

In addition, in the present invention, on the plasma generation chamber side of the cavity resonator, a slit for supplying microwaves is provided at a position facing the electrode installed in the plasma generation chamber, so that the high frequency current flows evenly on the electrode. As a result, the energy of the ions can be applied uniformly over the entire surface of the object to be processed.

Furthermore, in the present invention, a member made of a material that transmits microwaves and that maintains the plasma generation chamber in a vacuum state is disposed on the plasma generation chamber side of the slit provided in the cavity resonator. Since it does not touch the plasma directly, it is possible to significantly improve the variation in microwave radiation intensity from slit due to differences in plasma density, and as a result of -f:, the stability of the plasma can be significantly improved.
-1: The plate provided with the slits can be prevented from being heated by the plasma, making it possible to prevent thermal deformation of the plate.

Furthermore, since the member that maintains the plasma generation chamber in a vacuum state is made of glass made of quartz or ceramic made of alumina, it is possible to more effectively prevent thermal deformation of the plate provided with the slits. In particular, when it is made of glass made of quartz, the plasma generation chamber can be protected from contamination by impurities such as heavy metals.

In the present invention, inside the plasma generation chamber.

A second plasma generation means is provided, and by introducing oxygen gas into the second plasma generation means and generating plasma, the oxygen gas becomes radicals, and the resist film to be processed is ashed by the oxygen radicals. can be processed.

Moreover, in the present invention, the second plasma generating means is constituted by a high voltage generating power source and a pair of electrodes, and furthermore, the pair of electrodes is constituted by a stage for mounting the substrate and a cavity resonator. , it becomes possible to perform the ashing process accurately.

Furthermore, in the present invention, the ashing process can be performed accurately regardless of whether an AC power source or a DC source is employed as the high voltage generating power source of the second plasma generating means.

[Implementation Pnuri]

An embodiment of the present invention will be described below with reference to the drawings.

Fig. 1 is a longitudinal sectional front view showing the first embodiment of the present invention;
3 and 4 are plan views showing various embodiments of the slit plate, respectively.

The plasma processing apparatus of the embodiment shown in FIG. 1 includes a cavity resonator 1, a waveguide 2 for introducing microwaves into the cavity resonator 1, a magnetron 6, a plasma generation chamber 6,
A slit plate 5 provided on the plasma generation chamber 6 side in the cavity resonator 1, a quartz plate 4 placed on the plasma generation chamber 6 side in this slit plate 5, and an electrode 7 installed in the plasma generation chamber B. , a high frequency power supply 11, and a gas supply pipe 9 for supplying plasma processing gas into the plasma generation chamber 6.
and a gas exhaust pipe 10 that evacuates the inside of the plasma generation chamber 6.
, a vacuum pump (center not shown) connected to this, and a quartz cylinder 15 attached to the inner peripheral surface of the plasma generation chamber 6
, a quartz ring 16 attached to the inner bottom of the plasma generation chamber 6, and a substrate 1 to be processed on the upper surface of the electrode 7.
2, and a substrate holder 17 for holding the substrate 2.

@The cavity common camera unit 1 is formed into a circular shape in EOI mode. Microwaves from a magnetron 3 are supplied to the cavity resonator 1 through a waveguide 2.

The waveguide 2 is eccentrically attached to the circular cavity resonator 1 in order to improve coupling with the EOI mode.

On the slit plate 5, ring-shaped slits (5a, 5b, 5c) are formed in the direction perpendicular to the electric field of the EOI mode, as shown in FIGS. 2, 5, and 4. In the embodiment shown in FIG. 1, a slit plate 5 having a slit 5a having the shape shown in FIG. 2 is attached. When using a microwave of 2.45 GH2, the length of each slit is widened to a dimension of 60 mm or more, which corresponds to 172 wavelengths of the microwave, in order to improve the radiation of the microwave from the slit. Further, the slit plate 5 is arranged at a position facing the electrode 7 installed in the plasma generation chamber 6, and the cavity resonator 1 also supplies microwaves to the plasma generation chamber 6 through the slit.

The cavity resonator 1 and the slit plate 5 are connected to ground.

The cavity resonator 1, which stores and increases microwave energy, and the plasma generation chamber 6, which is maintained in a vacuum atmosphere and generates plasma and maintains the generated plasma, can be removed from each other while maintaining their functions. It is composed of

The plasma generation chamber 6 is evacuated by a vacuum pump through a gas exhaust pipe 10, and the pressure is controlled at 1 to 10 Torr.

The electrode 7 is fixed to the plasma generation chamber 6 via an insulating material 8. A high frequency power source 11 is connected to this electrode 7.

A plasma processing gas is supplied to the gas supply pipe 9 from a gas supply source (not shown) at a set flow rate. The plasma processing gas supplied to the gas supply pipe 9 is guided from the gas supply pipe 9 to gas guide grooves 6avC formed in a plasma generation chamber 6vC, which are provided at equal intervals in the circumferential direction of the quartz cylinder 15. The gas is uniformly blown into the plasma generation chamber 6 through the gas blowing holes 15a.

A quartz plate 4 is placed above the plasma generation chamber 6 with an O-ring 16 interposed therebetween. This quartz plate 4 is fixed to the plasma generation chamber 6 side by a holding ring 14. The quartz plate 4 transmits microwaves and maintains the plasma generation chamber 6 in a vacuum state.

A cavity resonator 1 is coupled to the upper surface of the quartz plate 4 with a slit plate 5 in close contact therewith.

The plasma processing apparatus of the above embodiment is operated in a first-order manner.

Let us now explain the case of etching.

Etching gas is supplied from the gas supply pipe 9, and 1~'OT
After setting the pressure to Orr, the fugnetron 6 is operated to generate plasma.

The etching gas supplied from the gas supply pipe 9 passes through the gas guide groove 6a, and from a plurality of gas blowing holes 15a provided at equal intervals in the circumferential direction at the upper end of the quartz cylinder 15, onto the electrode Z. It is evenly supplied above the substrate 12 placed on the substrate 12 . The supplied etching gas is excited in the plasma and becomes ions and radicals.

Plasma generated by microwaves is caused by the microwaves directly acting on the electrons in the plasma, and the plasma and substrate 1.
The potential difference between the two is at a level of 20-30V. Therefore, with microwave plasma alone, the energy of ions incident on the substrate 12 is weak, making anisotropic etching difficult. In this embodiment, a high frequency voltage is applied to the electrode 7 from a high frequency power source 11, and the ions in the plasma are accelerated by this voltage and made to enter the substrate 12. Further, the ion energy can be arbitrarily controlled by applying a voltage and can be set to an appropriate value. This enables highly anisotropic and highly accurate etching.

Electrode 7 [The applied high-frequency current flows through the plasma and flows into the ground side. If this high frequency current is not uniform,
A problem occurs in that the energy of ions incident on the substrate 12 is not uniform on the substrate 12, and the etching speed also varies on the substrate 12.

However, in this embodiment, a slit plate 5 is provided at a position facing the 'electrode 7', so that the high frequency 'llt current flows evenly over the electrode 7.

In the conventional apparatus, the etching characteristics of the Poly-8i film under conditions where side etching does not occur are as follows: etching rate of 1100 n/min, uniformity of ±10%, and etching rate ratio of 6 to 7 with respect to the underlying 5102 film. If the etching rate is increased to 300 nm for 7 minutes or more using this conventional apparatus, the incident energy of the ions will become excessive, so the substrate S10. The etching rate ratio with the film decreases to 5 or less.

In addition, element damage also occurred, so it could not be put to practical use.

In this embodiment of the invention, the etch rate is ioo.

nm 7 minutes or more, etching speed ratio with underlying 5i02 film 1
Etching can be performed effectively with uniformity of 0 or less and uniformity of +5 or less.

By the way, as the etching process is repeated many times, t/j
In the internal VC of the plasma generation chamber B, some of the reaction products adhere to the wall surface and remain, and this deteriorates the etching characteristics due to an open phase and becomes foreign matter that adheres to the product, resulting in a decrease in yield. It's coming. Therefore, it is necessary to periodically open the plasma generation chamber of the plasma processing apparatus and clean the inside. On the other hand, the cavity resonator 1 and the slit plate 5 are strongly mechanically and electrically coupled to maintain the characteristics as a resonator. The reason is,
Axial symmetry and height dimensional accuracy are affected not only mechanically but also electrically, so if the quality of upper air contact changes depending on the position, the characteristics of the resonator will change and reproducibility will decrease. Because it does.

In this respect, in this embodiment of the present invention, even when performing maintenance inspection inside the plasma generation chamber 6, the cavity resonator 1 and the slit plate 5 are not separated, and the plasma generation chamber 6 is
Since the cover can be removed, workability is good and reproducibility is excellent. In addition, if the slit plate 5 is of a specification that does not require maintenance or cleaning, it is also possible to integrate the slit plate 5 with the cavity resonator 1, and in this case, stability and reproducibility can be further improved.

Furthermore, since all of the wall surfaces in contact with the plasma are covered with high-purity quartz, the structure is resistant to contamination of the device by impurities such as heavy metals.

However, if the contamination of the element by impurities does not result in any leakage, ceramics made of alumina, tetrafluoroethylene, or the like may be used, as long as the material can transmit microwaves.

Furthermore, since the slits of the slit plate 5 are provided in the atmosphere, heating by plasma does not occur, so that no thermal deformation of the slit plate 5 occurs.

In addition, since the slit through which the microwave is radiated toward the plasma generation chamber 6 side does not come into direct contact with the plasma, variations in the microwave radiation intensity from slit to slit due to differences in plasma density are greatly improved, and as a result, the stability of the plasma is improved. can be significantly improved. However, the slit plate 5 and the cavity resonator 1 may be made of any material as long as the inner surface is a conductor.

7" 7 In the case of SmaCvD as well, a film can be formed on the surface of the substrate 12 by supplying a film forming gas from the gas supply pipe 9 in the same manner as in the above-described etching.

Film quality can be controlled by controlling the energy of ions incident on the substrate 12. In this way, according to this embodiment, it is possible to form a uniform film with good quality.

As described above, this embodiment can be applied to processing using plasma and the energy of ions incident from the plasma.

Also, the structure of the cavity resonator and the high frequency core frequency.

The invention is not limited to this example. The structure of the cavity resonator may be any structure that satisfies the resonance conditions, such as a rectangular resonator or a coaxial resonator.

Both co-system mode and structure can be arbitrarily selected and used. The "high frequency" source frequency can also be arbitrarily selected from direct current to several tens of MHz.However, if the subject of the plasma treatment is an insulating film or the processing target includes an insulating film, the frequency from 100 KHz to several tens of MHz can be selected. High frequencies up to

Next, FIG. 5 is a longitudinal sectional front view showing a second embodiment of the present invention.

In this second embodiment, a quartz belljar 18 is installed inside the plasma generation chamber 6. This quartz bell jar 18
is attached to the upper part of plasma generation chamber B via QIJ song 3, and is designed to seal the vacuum of plasma generation chamber B.

Inside the quartz belljar 18, above the electrode 7, a nozzle ring 19 is installed. This nozzle ring 19 has gas blowing holes 1 arranged at equal intervals in the circumferential direction.
A plurality of 9a are provided. Further, the nozzle ring 19 is connected to the gas supply pipe 9. Then, it passes through the gas supply pipe 9 and enters the plasma generation chamber 6 through the gas blowing hole 19a of the nozzle ring 19.

A shield cover 20 is provided around the quartz bell 18, which is designed to supply gas evenly.

It is designed to prevent microwaves from leaking to the outside. The shield cover 20 is provided with a monitoring window 20a at an arbitrary position on the wall surface, and from this monitoring window 20a, the internal situation, analysis of plasma light during processing, and monitoring links are performed.

A wire mesh 20b is attached to the monitoring window 2Qa iC, and the wire mesh 20b prevents leakage of microwaves.

In this second embodiment, the quartz belljar 18 serves both as the microwave introduction window and the vacuum container, so the structure can be simplified. Therefore, cleaning of the plasma generation chamber 6, etc. becomes easy, and the number of foreign substances can be reduced, so that the yield per product can be further improved.

Note that the other configuration 2 effect of this second embodiment is the same as that of the first embodiment.
This is similar to the embodiment.

Next, FIG. 6 is a longitudinal sectional front view showing a third embodiment of the present invention.

This sixth embodiment shows an example applied to an ashing process, in which a mesh cylinder 21 is fixed between a quartz plate 4 attached to the upper part of a plasma generation chamber 6 and a stage 22. Further, the mesh cylinder 21 is formed in a size that does not allow microwaves to pass therethrough.

The mesh tube 21 includes a high voltage generating power source (not shown).
and a pair of electrodes connected to the second plasma generating means.

The pair of electrodes is composed of a stay 22 for mounting a substrate and a cavity resonator 1.

A nozzle ring 23 is attached to the outer periphery of the mesh tube 21. This nozzle link 251'li has 5 gas blowing holes 25a arranged at equal intervals in the circumferential direction on the inner wall.
is provided. Further, the nozzle ring 23 is connected to the gas supply pipe 9. Then, the gas supply pipe 9 also introduces oxygen gas into the nozzle ring 23.

Oxygen gas is supplied to the mesh cylinder 21 through a gas blowing hole 23a provided in the nozzle ring 23.

A quartz cylinder 25 is attached to the outer periphery of the nozzle ring 23. This quartz cylinder 25 is fixed approximately in the middle of the plasma generation chamber 6 with O-rings 24a, 241) sandwiched between its upper and lower parts.

In this fifth embodiment, a gas supply pipe 9 is provided in the mesh tube 21.
→ Nozzle ring 26 → Oxygen gas is supplied through the gas blowing hole 23a.

Next, the magnetron 3 is operated to supply microwaves to generate plasma between the slit plate 5 and the mesh tube 21. Since the mesh tube 21 is dimensioned so that microwaves do not pass therethrough, the plasma is confined between the mesh tube 21 and the quartz plate 4.

As a result, the oxygen gas becomes a radical, and the mesh tube 2
1 onto the substrate 12. This oxygen radical allows the resist film on the substrate to be subjected to an ashing process.

Furthermore, in this sixth embodiment, since a part of the plasma generation chamber 6 is constructed of the quartz cylinder 25, the internal situation can be easily monitored.

Note that the other configuration 1 effect of this third embodiment is as follows:
．． This is similar to the second embodiment.

〔Effect of the invention〕

According to the invention described in claim 1 of the present invention described above, since the plasma generation chamber and the cavity resonator are configured to be removable while maintaining the VC function,
The plasma generation chamber can be easily opened for maintenance and inspection inside the plasma generation chamber.

In addition, there is an effect that the plasma generation chamber and the cavity resonator can be easily combined in the operating state without changing the resonance characteristics.

Further, according to the invention described in claim 2 of the present invention, on the plasma generation chamber side of the cavity resonator, at a position facing the electrode installed in the plasma generation chamber V,
Since the slit for supplying microwaves is provided, the high frequency current flows uniformly on the electrode, resulting in the effect that the energy of ions can be applied uniformly over the entire surface of the object to be treated.

Furthermore, according to the invention described in claim 3 of the present invention, the slit provided in the cavity resonator is formed of a material that transmits microwaves on the plasma generation chamber side, and the plasma generation chamber is evacuated. Because the slits do not come into direct contact with the plasma, the dispersion of microwave radiation intensity from slit to slit due to differences in plasma density can be greatly reduced, and as a result, the stability of the plasma is greatly improved. In addition, it is possible to prevent the plate provided with the slits from being heated by the plasma, which has the effect of preventing thermal deformation of the plate.

Furthermore, in the invention set forth in claim 4 of the present invention, the member for maintaining the plasma generation chamber in a vacuum state is made of glass made of quartz, and in the invention set forth in claim 5, Since the member is made of ceramics made of alumina, it is possible to more effectively prevent thermal deformation of the plate on which the slits are provided, and especially when it is made of glass made of quartz, it can be prevented from being contaminated by impurities such as heavy metals. This has the effect of protecting the plasma generation chamber.

According to the invention set forth in claim 6 of the present invention, a second plasma generation means is provided inside the plasma generation chamber, and a nitrogen gas is introduced into the second plasma generation means. However, by generating plasma, the oxygen gas becomes Rancal-like, and the resist film to be processed can be ashed by the oxygen radicals.

Moreover, in the invention set forth in claim 7 of the present invention, the second plasma generating means is constituted by a high voltage generating power source and a pair of electrodes, and the invention set forth in claim 8 Since the pair of electrodes is composed of a stage for mounting the substrate and a cavity resonator, there is an effect that the ashing process described above can be performed accurately.

Furthermore, in the invention described in claim 9 of the present invention, as a high voltage generation power source for the second plasma generation means,
An alternating current power supply is employed, and the invention described in claim 10 employs a direct current power supply, each of which has the effect of accurately performing the ashing process.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional front view showing a first embodiment of the present invention, and a second embodiment of the present invention is shown in FIG.
Figures 6 and 4 □□□ are respectively plan views showing various embodiments of Surin I/plates, and 5 □□□ is the second embodiment of the present invention.
FIG. 6 is a longitudinal sectional front view showing a third embodiment of the present invention. 1...Cavity resonator, 2...Microwave waveguide. 6... Magnetron, 4... Quartz plate. 5... Slit plate, 5a, 5b, 5c... Slit, 6... Plasma generation chamber, 7... Electrode, 9...
Gas supply pipe, 10... gas exhaust pipe. 11... High frequency power supply, 12... Board, 15...
...Quartz cylinder, 15a...Gas blowout hole. 16...Quartz ring, 18...Quartz bell jar. 19... Nozzle ring, 19a... Gas blowing hole, 2
0...Shield cover 21...Mesh tube, 22
...Stage for board mounting, 23... Nozzle ring, 26a... Gas blow-off hole, 25... Quartz cylinder. Agent: Patent attorney Masaru Ogawa 6-)

Claims (1)

[Claims] 1. In a plasma processing apparatus that generates plasma using microwave energy, a plasma generation chamber is maintained in a vacuum atmosphere and generates the plasma and maintains the generated plasma; 1. A plasma processing apparatus comprising: a cavity resonator for accumulating and increasing energy; the plasma generation chamber and the cavity resonator are configured to be removable while maintaining their functions. 2. In claim 1, a slit for supplying microwaves from the cavity resonator to the plasma generation chamber is provided at a position facing an electrode installed in the plasma generation chamber on the plasma generation chamber side of the cavity resonator. A plasma processing apparatus characterized by being provided with. 3. In claim 2, a member made of a material that transmits microwaves and that maintains the plasma generation chamber in a vacuum state is arranged on the plasma generation chamber side of the slit provided in the cavity resonator. A plasma processing apparatus characterized by the following. 4. The plasma processing apparatus according to claim 3, wherein the member for maintaining the plasma generation chamber in a vacuum state is glass made of quartz. 5. The plasma processing apparatus according to claim 1, wherein the member for maintaining the plasma generation chamber in a vacuum state is a ceramic made of alumina. 6. A plasma processing apparatus according to claim 1, characterized in that a second plasma generation means is provided inside the plasma generation chamber. 7. A plasma processing apparatus according to claim 6, wherein the second plasma generating means is comprised of a high voltage generating power source and a pair of electrodes connected to the high voltage generating power source. 8. A plasma processing apparatus according to claim 7, wherein the pair of electrodes comprises a stage for mounting a substrate and a cavity resonator. 9. A plasma processing apparatus according to claim 7, wherein the high voltage generating power source is an alternating current power source including high frequency. 10. The plasma processing apparatus according to claim 7, wherein the high voltage generating power source is a DC power source.