JP3136054B2 - Plasma processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus using microwaves.

[0002]

2. Description of the Related Art In recent years, a plasma processing apparatus has been used for processing such as film formation, etching, ashing, and the like in a semiconductor product manufacturing process in accordance with high density and high miniaturization of a semiconductor product. , 0.1 to 10 mTorr
Microwave plasma devices that generate high-density plasma by combining microwaves and a magnetic field from a ring-shaped coil tend to be used because plasma can be stably generated even in a high vacuum state with relatively low pressure. It is in.

Conventionally, as a microwave plasma apparatus of this type, a microwave introduction port is provided in a plasma generation chamber having a magnetic field forming means to form an electron cyclotron resonance cavity, and ions are extracted from the plasma generation chamber to extract semiconductor wafers in the reaction chamber. For irradiating the ion beam to
JP-A-8-13626), or a discharge tube that generates plasma by introducing microwaves has a structure that extends from the direction of microwave introduction toward the sample in a portion beyond the main discharge portion, enabling plasma processing with a large area. (JP-A-59-202635) and the like are known.

However, the apparatus disclosed in Japanese Patent Publication No. 58-13626 has a plasma generating chamber and a reaction chamber, so that not only the entire apparatus becomes large and the cost becomes high, but also the plasma In order to efficiently irradiate the wafer with the electric field, a high voltage of about 1000 V is required.

Further, in an apparatus as disclosed in Japanese Patent Application Laid-Open No. 59-2026353, the lines of magnetic force generated by applying a current to a ring-shaped coil are not perpendicular to the wafer surface but are inclined. The etching state also inclines in the direction of the lines of magnetic force, and vertical etching cannot be performed.

Accordingly, the present inventor has disclosed in Japanese Patent Laid-Open No. 4-36152.
No. 9 proposes an apparatus for solving the above problem at once. According to this, a cavity resonator structure that excites electron cyclotron resonance is formed at a specific distance between the microwave introduction surface and the wafer mounting surface in the reaction chamber, and is relatively small. And a high-density plasma could be set up.

[0007]

However, in the above-described apparatus, since a magnetic field is required for generating plasma, a magnetic field generating means such as a permanent magnet or an electromagnetic coil must be provided. There is a problem that not only the device itself is relatively large, but also the cost is high.

Further, in the above-described apparatus, a uniform plasma can be generated to some extent over the entire processing region in the case of a relatively small wafer such as a 6-inch wafer. However, when the diameter of the wafer is increased to 8 inches or 12 inches as in today, the electric field in the vicinity of the central portion of the wafer or in the peripheral portion becomes strong, and the electric field distribution becomes uniform over the entire processing region. And the electric field distribution becomes non-uniform, so that in-plane uniformity cannot be expected even in plasma processing.

The present invention focuses on the above problems,
It was created to solve this effectively. An object of the present invention is to provide a plasma processing apparatus capable of generating plasma only by microwaves without using a magnetic field.

[0010]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides an airtight processing container having a mounting table for mounting an object to be processed therein, a microwave generator, and a microwave generator. A waveguide for guiding the microwave generated by the wave generator to the processing vessel; and a planar antenna member connected to the waveguide and arranged opposite to the mounting table. members have a large number of slits formed in concentric circles or in a spiral shape, the length of the slit, the
Approximately 1/2 of the guide wavelength of microwave and approximately 1 of the free space wavelength
/ 2, the radius of the antenna member
The distance between the slits in the direction is approximately the same as the guide wavelength.
It is configured to be set to one length .

[0011]

Since the present invention is constructed as described above, the microwave generated from the microwave generator is supplied to the planar antenna member via the waveguide, and is processed by the spiral or concentric slit provided in the antenna member. A circularly polarized or linearly polarized electric field is formed in the container. In this case, since the slits are formed in a spiral or concentric shape, the gas molecules can be excited and turned into plasma without a magnetic field, and the uniform plasma can be formed over a wide processing area. Can be formed stably. In this case, by forming a radiation element for preventing microwave power reflection on the outer peripheral edge of the antenna member, it is possible to eliminate the reflection of the microwave power extending from the center of the antenna member to the peripheral portion, thereby improving the antenna efficiency. it can.

Further, the distance between the slits in the radial direction of the antenna member is set to, for example, approximately one of the guide wavelength of the microwave.
By making various changes to ２ or と 共 に and changing variously the phases of the deflection directions of the slits adjacent in the radial direction, the combined polarization direction is set to be the tangential direction of the concentric circle, and the circular polarization or The linearly polarized electromagnetic field can be formed substantially concentrically in the processing container, and the plasma generation efficiency can be improved.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the plasma processing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing an example of a plasma processing apparatus according to the present invention, and FIG.
It is a top view which shows the antenna member used for the processing apparatus shown in.

In this embodiment, a case where the plasma processing apparatus is applied to a plasma etching apparatus will be described. As shown in the figure, the plasma etching apparatus 2 as a plasma processing apparatus has a processing vessel 4 whose side wall and bottom are made of a conductor such as aluminum and which is entirely formed in a cylindrical shape. The ceiling of the container 4 is opened, and an insulator having a thickness that can withstand the vacuum pressure, for example, a quartz plate 8 is provided airtightly through a sealing member 6 such as an O-ring, and is sealed inside the container. A processing space S is formed.

A mounting table 10 on which an object to be processed, for example, a semiconductor wafer W is mounted is accommodated in the processing container 4. The mounting table 10 is formed in a substantially cylindrical shape having a central portion made of, for example, alumite-treated aluminum or the like, and the lower portion thereof is supported by a support table 12 also formed of aluminum or the like in a cylindrical shape. In addition, the support table 12 is installed on the bottom of the processing container 4 via an insulating material 14.

An electrostatic chuck and a clamp mechanism (not shown) for holding a wafer are provided on the upper surface of the mounting table 10. The mounting table 10 is connected to a matching box 18 via a power supply line 16 and a matching box 18. For example, it is connected to a 13.56 MHz bias high frequency power supply 20. Mounting table 1
A cooling jacket 22 for flowing cooling water or the like for cooling a wafer during plasma processing is provided on the support table 12 supporting the wafers 0.

A gas supply nozzle 24 made of, for example, a quartz pipe for introducing a processing gas, for example, an etching gas into the container, is provided on a side wall of the processing container 4. The processing gas source 32 is connected to the processing gas source 32 through a valve 28 and an on-off valve 30. The etching gas as the processing gas is CF ₃ ,
CHF ₃ , CF ₄ gas or the like can be used.

A magnetic field generating means 34 such as an electromagnetic coil or a permanent magnet is provided on the outer periphery of the side wall of the container along the circumferential direction thereof.
Alternatively, a plasma generated by generating a magnetic field along a substantially circumferential direction is confined. The magnetic field generating means 34 is not always necessary for generating plasma as described later, and may be omitted without providing it.

An exhaust port 36 connected to a vacuum pump (not shown) is provided at the bottom of the container so that the inside of the processing container 4 can be evacuated to a predetermined pressure as required. On the other hand, a quartz plate 8 for sealing the upper part of the processing vessel 4
A flat antenna member 38 which is a feature of the present invention,
Is provided. Specifically, the planar antenna member 38
Is configured as a bottom plate of a radial waveguide box 40 formed of a hollow cylindrical container having a small height, and is attached to an upper surface of the quartz plate 8.

At the center of the upper surface of the disc-shaped radial waveguide box 40, an outer tube 44A of a waveguide 44 whose other end is connected to a microwave generator 42 of, for example, 2.45 GHz is connected.
The internal inner cable 44B is connected to the center of the disk-shaped antenna member 38 or is slightly separated therefrom. As the waveguide, a waveguide having a circular or rectangular cross section or a coaxial waveguide can be used. In this embodiment, a coaxial waveguide is used.

The disk-shaped antenna member 38 is made of, for example, a copper plate having a diameter of 50 cm and a thickness of 1 mm or less. As shown in FIG. Many slits 4
6 are formed spirally and gradually toward the peripheral edge. In the illustrated example, the slit is swirled twice.

In this embodiment, the entire slit is formed by arranging a pair of slits 46A and 46B, which are a pair of slits 46A and 46B, which are arranged slightly apart in a substantially T-shape as described above while adjoining each other. Groups are formed. The length L1 of each of the slits 46A and 46B is set within a range from about 1/2 of the guide wavelength λ of the microwave to about 1/2 of the free space wavelength, and the width is set to about 1 mm. The distance L2 between the outer ring and the inner ring is set to substantially the same length as the guide wavelength λ although there is a slight adjustment. That is, the length L1 of the slit is set within a range represented by the following equation. _{λ 0 / 2√ε r ≦ L1 ≦} λ 0/2 where epsilon _r is the relative dielectric constant. By forming the slits 46A and 46B in this manner, it is possible to form a uniform electric field distribution in the processing space S located below the slits 46A and 46B.

A radiating element 4 for preventing microwave power reflection having a width of about several millimeters is provided along the periphery of the disk-shaped antenna member 38 outside the spiral slit.
8 are formed one turn with their ends differing from each other in the radial direction so as to increase the antenna efficiency.

In the radial waveguide box 40, a dielectric 50 having a predetermined dielectric constant is accommodated in order to shorten the microwave wavelength to a short guide wavelength. As the dielectric 50, a material having a small dielectric loss such as Al ₂ O ₃ or SiN can be used.

The lower surface of the antenna member 38 and the mounting table 1
0 is set to be λ / 2 × n (integer), where λ is the guide wavelength of the microwave, and the processing space S is set to the TE mode or the TM mode. Cavity resonator structure. That is, when plasma does not exist in the processing space, a standing wave is formed here. Therefore, since the wafer W is located on the microwave reflecting surface, it is possible to prevent an adverse effect that the wafer is heated by the microwave.

Next, the operation of the present embodiment configured as described above will be described. First, the semiconductor wafer W is transferred to the processing container 4 by the transfer arm through a gate valve (not shown).
The wafer W is mounted on the mounting surface of the mounting table 10 by vertically moving a lifter pin (not shown).

Then, the inside of the processing container 4 is maintained at a predetermined process pressure, for example, within a range of 0.1 to 10 mTorr, and an etching gas such as CF _{4 is} supplied from the gas supply nozzle 24 while controlling the flow rate. Microwaves from the microwave generator 42 are introduced into the processing space S to generate plasma, and etching is performed.

Here, for example, the microwave of 2.45 GHz generated by the magnetron generator 42 is TM or T.
In the E or TEM mode, the light propagates through the coaxial waveguide 44, reaches the antenna member 38 of the radial waveguide box 40, and radiates from the center of the disk-shaped antenna member 38 to which the inner cable 44B is connected. While being propagated to the antenna member 38, a plurality of spirally formed slits 46 are formed in the antenna member 38.
Microwaves are emitted from A and 46B through the quartz plate 8 toward the processing space S. In this case, since a large number of slits whose length is set to approximately の of the guide wavelength of the microwave are arranged in a spiral shape as described above, circularly polarized waves are uniformly emitted over the plane of the antenna member, The electric field density in the lower processing space S can be made uniform above the wafer.

Therefore, the plasma excited by the microwave energy has a uniform density over the entire processing space S and can stably generate high-density plasma. As a result, the plasma processing, in this embodiment, the plasma etching processing can be performed uniformly over the surface of a large-diameter wafer.

In this case, by applying a bias high-frequency power to the mounting table 10, a negative potential can be generated on the mounting table 10, and ions can be efficiently extracted from the plasma. .

Furthermore, when microwave power propagates radially from the center of the antenna member 38 toward the peripheral portion, if there is residual power, it is reflected at the outer peripheral end of the antenna and causes a reduction in antenna efficiency. However, in this embodiment, since the radiating element 48 of approximately one turn is provided at the peripheral edge of the antenna member 38, the residual power is not emitted here and is not reflected toward the center of the antenna. Can be increased.

FIG. 3 is a graph showing antenna efficiency when the above-described radiating element is provided and when it is not provided. Here, the opening diameter D on the horizontal axis is given as follows. D = 2 (L _max + λ · 1/2) L _max : maximum value between antenna center O and radiating element, λ
Is the microwave wavelength in the tube. Α _{max in the} graph indicates the maximum value of the radio wave emission ratio in the slot pattern,
The unit is 1 / m.

As is apparent from this graph, when α _max and the aperture diameter D are variously changed, the radiation element 4
It turns out that the antenna efficiency is always improved by providing 8.

The magnetic field generating means 34 provided on the side wall of the processing container 4 is for generating a magnetic field for confining the plasma.
A plasma can be generated by the microwave from FIG.

As described above, in this embodiment, the coaxial waveguide 44 is used for microwave propagation, and the antenna member 3 is used.
8 is provided with a number of slits in a spiral shape so as to supply microwave power from the center to the periphery of the processing container, so that the electric field density by the microwave is uniform over substantially the entire processing space. Can be done.

Therefore, not only can plasma be generated without using a magnetic field in the processing space, but also high-density plasma having a uniform concentration over a wide range can be stably generated, and large-diameter plasma can be generated. Even in the case of a wafer, in-plane uniformity of plasma processing can be achieved.

In the above embodiment, the spiral of the slit is formed so that its diameter increases as it rotates counterclockwise. However, the rotational direction of the spiral may be set to the opposite direction. Good.

Further, although a pair of substantially T-shaped slits 46A and 46B formed in the antenna member 38 are spirally arranged, the present invention is not limited to this arrangement. Two or more concentric circles around the center of the member 38 may be arranged. In this case as well, the distance between adjacent concentric circles is set to be substantially equal to the length of the guide wavelength of the microwave as in the spiral arrangement, though there is a slight adjustment.

As described above, by arranging the slit pairs concentrically, a circularly polarized wave is emitted from the antenna member 38 toward the processing space S, and a more uniform electric field is generated in the processing space S. Thus, the uniformity of the plasma processing in the wafer surface can be further improved.

Further, the pair of slits 46A and 46B formed in the antenna member 38 may be completely joined in a T-shape as shown in FIG. 4 without being slightly separated. Also in this case, the arrangement of the slit pairs may be concentrically arranged as shown in FIG. 4 or spirally arranged as shown in FIG.

Further, instead of using a pair of slits arranged in a T-shape as the slit, as shown in FIG. A number of slits 46 having L1 are formed along the circumferential direction of the copper plate, and two slits 46 are formed around the center O of the antenna member 38.
Turns or more concentric circles or spirals may be arranged. In addition, a radiating element 48 of approximately one turn is provided on the outer peripheral edge of the row of slits 48 to increase the antenna efficiency similarly to the antenna member shown in FIG.

Also, a magnetic field generating means 34 provided auxiliary to the outside of the processing vessel 4 for confining the generated plasma.
6 (see FIG. 1) is not arranged so as to form an upward or downward magnetic field in the processing space.
As shown in (1), a plurality of magnetic field generating means 52 such as permanent magnets or electromagnetic coils are arranged along the processing container 4 so that the polarity in contact with the processing container is alternately different.

As a result, a magnetic field is generated in the horizontal direction between the adjacent magnetic field generating means 52 as shown by the arrows, and a magnetic field directed in an arc-shaped horizontal direction with respect to the processing space can be generated. Also in this case, the plasma is confined by the generated magnetic field, and the plasma generation efficiency can be increased.

In each of the above embodiments, the case where the magnetic field generating means 34 is provided on the side of the processing container 4 to form a magnetic field in the processing space S parallel to the wafer surface so as to be orthogonal to the electric field. However, in a device that does not apply a magnetic field from the outside, that is, a device that does not include a magnetic field generating means, the electric field component H1 radiated from the microwave antenna member is substantially It must be formed concentrically. By forming the electric field component H1 concentrically in this manner, the free electrons existing in the processing container 4 are accelerated while being confined in the processing space S by the concentric electric field component H1, so that the plasma is efficiently generated. Can be generated.

In order to obtain the above-mentioned substantially concentric electric field in the processing vessel 4, slits of the antenna member for emitting microwaves are formed substantially concentrically, and the intervals and the like are variously devised as follows. do it.

First, when a substantially circularly polarized electromagnetic wave is radiated from each radiation slit, the slit of the antenna member is formed as shown in FIGS. 8A and 8B. That is, in FIG. 8A, the distance L3 between the slits 46 in the radial direction of the planar antenna member 38 is set to be substantially the same as the guide wavelength λg of the microwave. In the slit 46, slits 46A and 46B having different directions are alternately arranged to form a substantially concentric slit row. However, the arrangement of the slits 46 adjacent in the radial direction is different from each other as shown in the illustrated example. The deflection directions are set to be opposite, and the combined polarization direction is set to be the tangential direction of the concentric circle.
By reversing the arrangement of the slits 46 in this manner,
A substantially circularly polarized electric field can be formed substantially concentrically in the processing container.

In FIG. 8B, the distance L3 between the slits adjacent to each other in the radial direction of the antenna member 38 is defined as
It is formed to have a length of about の of the guide wavelength λg of the microwave. The arrangement of the slits 46 adjacent in the radial direction is set so as to have a phase difference of about 180 ° from each other, and further, the deflection characteristics are reversed. As a result, the combined polarization direction is set to be the tangential direction of the concentric circle,
It is possible to form a substantially circularly deflected electric field, whose deflection characteristics are opposite to each other, substantially concentrically in the processing container.

When a substantially linearly polarized electromagnetic wave is radiated from each radiation slit, the slit of the antenna member is formed as shown in FIGS. 8 (C) and 9 (A). That is, in FIG. 8C, the distance L3 between the slits adjacent to each other in the radial direction of the antenna member 38 is set to be approximately の 長 of the guide wavelength λg of the microwave. The slits 46 that are adjacent in the radial direction are arranged such that the deflection directions are mutually shifted by approximately 90 degrees, so that the combined polarization direction is a tangential direction of a concentric circle. This makes it possible to form a substantially linearly polarized electromagnetic wave in a substantially concentric manner in the processing container.

In FIG. 9A, the distance L3 between the slits adjacent to each other in the radial direction of the antenna member 38 is defined as
It is formed to have a length of about の of the microwave guide wavelength λg. The slits 46 adjacent to each other in the radial direction are arranged such that the deflection direction is changed by approximately 90 ° between each unit with two slits as one unit, and the combined polarization direction is set in the tangential direction of the concentric circle. It has become. This makes it possible to form substantially linearly polarized electromagnetic waves substantially concentrically in the processing container.

In FIG. 9B, FIG.
And a circumferential slit 4 having a predetermined length in the direction orthogonal to the radial direction, that is, in the circumferential direction, between the slits 46 adjacent in the radial direction.
Many 6C are formed. Therefore, the circumferential slit 46
The distance between C and the slit 46 is approximately ４λg. The length of the circumferential slit 46C is set within a range from approximately 1/2 of the guide wavelength λ of the microwave to approximately 1/2 of the free space wavelength. Also in this case, the same operation and effect as in the case of FIG. 8C can be exhibited.

As shown in FIGS. 8 and 9, the arrangement of the slits 46 is devised so that circularly or linearly polarized electromagnetic waves are formed concentrically in the processing vessel, so that free electrons are introduced into this space. Can be accelerated while confined, so
The life of free electrons can be prolonged to increase the plasma generation efficiency.

In each of the embodiments described above, the plasma etching process for a semiconductor wafer has been described as an example. However, the present invention is not limited to this and can be applied to any apparatus using plasma, for example, plasma ashing. apparatus,
The present invention can be applied to a plasma CVD apparatus or the like. Further, the object to be processed is not limited to a semiconductor wafer, but may be another object to be processed,
For example, the present invention can be applied to processing of an LCD substrate or the like, which is expected to have a large size.

[0053]

As described above, according to the plasma processing apparatus of the present invention, the following excellent functions and effects can be exhibited. Because a large number of slits are formed concentrically or spirally on the planar antenna member to emit microwaves into the processing space, not only can plasma be generated without the assistance of a magnetic field, but also a relatively large area. , A uniform electric field can be formed. Therefore,
A relatively high-density plasma can be stably established over a wide range, and a large-diameter workpiece can be subjected to uniform plasma processing. In addition, since an expensive magnetic field generating means conventionally required for generating plasma can be omitted, a significant cost reduction can be achieved. Further, when a radiating element is provided on a peripheral portion of the antenna member, power loss due to reflection of microwave power can be eliminated, and antenna efficiency can be improved. Furthermore, in the case where the magnetic field generating means is not used, by forming a concentric electric field in the processing chamber, free electrons can be confined therein and accelerated, so that the plasma generation efficiency can be increased.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of a plasma processing apparatus according to the present invention.

FIG. 2 is a plan view showing an antenna member used in the processing apparatus shown in FIG.

FIG. 3 is a graph showing antenna efficiency when a radiating element is provided and when no radiating element is provided.

FIG. 4 is a view showing a modification of a slit provided in an antenna member.

FIG. 5 is a plan view showing a modification of the antenna member.

FIG. 6 is a plan view showing a magnetic field generating unit having a different shape from the magnetic field generating unit shown in FIG. 1;

FIG. 7 is a diagram illustrating a state of an electric field formed in the processing container.

FIG. 8 is a diagram showing a form of a slit formed in an antenna member of the device of the present invention.

FIG. 9 is a view showing a form of a slit formed in an antenna member of the device of the present invention.

[Explanation of symbols]

2 Plasma etching apparatus (plasma processing apparatus) 4 Processing vessel 8 Quartz plate 10 Mounting table 12 Support table 38 Planar antenna member 40 Radial waveguide box 42 Microwave generator 44 Coaxial waveguide (waveguide) 44A Outer tube 44B Inside Cables 46, 46A, 46B Slit 48 Radiating element 50 Dielectric S Processing space W Semiconductor wafer (workpiece)

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Makoto Ando 1-1-3, Ogura, Koyuki-ku, Kawasaki-shi, Kanagawa Prefecture (72) Inventor Nobuo Ishii 5-3-6 Akasaka, Minato-ku, Tokyo Tokyo Electron Limited In-house examiner Naohide Murata (56) References JP-A-3-262119 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H05H 1/46 C23C 16/50 C23F 4/00 H01L 21/3065

Claims (9)

(57) [Claims] An airtight processing container having a mounting table for mounting an object to be processed therein, a microwave generator, and a microwave generator for guiding microwaves generated by the microwave generator to the processing container. comprising a waveguide and a planar antenna member disposed mounting table facing to be connected to the waveguide, the planar antenna member have a plurality of slits formed in concentric circles or in a spiral shape The length of the slit is
Approximately 1/2 of the guide wavelength of the microwave and approximately 1 / of the free space wavelength
2, the radius of the antenna member
The distance between the slits in the direction is almost the same as the guide wavelength
A plasma processing apparatus characterized by being set to a length . 2. A mounting table for mounting an object to be processed is provided inside.
Airtight processing vessel, microwave generator and this microphone
The microwave generated by the microwave generator is guided to the processing vessel.
And a mounting table connected to the waveguide as described above.
And a planar antenna member arranged to face the
The planar antenna member is formed concentrically or spirally
It has a number of slits, the distance between the slits in the radial direction of the antenna member is formed substantially the same as the guide wavelength of the microwave, and the deflection characteristics of the slits adjacent in the radial direction are opposite to each other. made which are, features and to pulp plasma processing apparatus that the electric field of substantially circularly polarized and configured so as to form a substantially concentrically in the processing vessel. 3. A mounting table for mounting an object to be processed is provided inside.
Airtight processing vessel, microwave generator and this microphone
The microwave generated by the microwave generator is guided to the processing vessel.
And a mounting table connected to the waveguide as described above.
And a planar antenna member arranged to face the
The planar antenna member is formed concentrically or spirally
A plurality of slits, wherein the distance between the slits in the radial direction of the antenna member is formed to be approximately の the length of the guide wavelength of the microwave, and the deflection characteristics of the slits adjacent in the radial direction; Are set so as to have a phase difference of approximately 180 ° from each other, and the deflection characteristics are reversed, so that a substantially circularly polarized electric field can be formed substantially concentrically in the processing container. to Help plasma processing apparatus. 4. A mounting table for mounting an object to be processed is provided inside.
And airtight processing container, and a microwave generator, this microphone
The microwave generated by the microwave generator is guided to the processing vessel.
And a mounting table connected to the waveguide as described above.
And a planar antenna member arranged to face the
The planar antenna member is formed concentrically or spirally
A plurality of slits, wherein the distance between the slits in the radial direction of the antenna member is formed to be approximately の the length of the guide wavelength of the microwave, and the deflection characteristics of the slits adjacent in the radial direction; another is set to approximately 90 ° phase changes, features and to pulp plasma processing apparatus that the electric field of substantially linearly polarized and configured so as to form a substantially concentrically in the processing vessel. 5. A mounting table for mounting an object to be processed is provided therein.
Airtight processing vessel, microwave generator and this microphone
The microwave generated by the microwave generator is guided to the processing vessel.
And a mounting table connected to the waveguide as described above.
And a planar antenna member arranged to face the
The planar antenna member is formed concentrically or spirally
Has a number of slits, the distance between the slits in the radial direction of the antenna member, the deflection direction of the slit adjacent to the radial direction while being set to a length of approximately 1/4 of the guide wavelength of the microwave is set to approximately 90 ° phase changes to each other two units, to a characterized by being configured so as to form a substantially concentrically in a substantially linear deflection field of the processing container of Help Plasma processing equipment. The top of wherein said antenna member, a dielectric to shorten the wavelength of the microwave is provided, according to claim 1 乃 that said waveguide is characterized by being made to the coaxial structure
A plasma processing apparatus according to any one of Claims 5 to 5 . 7. The plasma processing apparatus according to claim 1 to 5, wherein the radiation element for introducing a microwave to the periphery of the antenna member is formed. Wherein said conductive tube is circular waveguide, of rectangular waveguide and the coaxial waveguide, a plasma processing apparatus according to claim 1 to 5, wherein the at one. 9. The plasma processing apparatus according to claim 4, wherein a circumferential slit having a predetermined length is formed between said adjacent slits in a direction orthogonal to a radial direction.