JPH09321031A - Plasma treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To generate a highly uniform magnetic field-having microwave plasma by feeding a an electromagnetic wave from a power source to a flat conductor board to radiate an electromagnetic wave for forming a plasma from the conductor board. SOLUTION: An electromagnetic wave for forming a plasma is fed to a circular graphite conductor board 107 from a UHF band power source 104 through a coaxial line 103. The conductor board 107 is formed through a dielectric 106 on a ground potential conductor board 105 to form a microstrip line resonator owing to which a high frequency current flows at high efficiency on the circular conductor board to radiate an electromagnetic wave in air at the plasma side, thus forming a plasma of raw material gas by the mutual reaction of the electromagnetic wave radiated from the board 107 with a magnetic field caused by an air core coil 102.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in a semiconductor device manufacturing apparatus, and more particularly in a dry etching step of treating a surface of a semiconductor material by plasma-converting a raw material gas in a gas phase and performing physical or chemical reaction of activated particles. Related plasma surface treatment apparatus.

[0002]

2. Description of the Related Art As an apparatus using plasma used in a conventional semiconductor device manufacturing process, for example, etching is described in Hitachi Review, 76, No. 7, (1994), pages 55-58. Microwave etching equipment has been used. The magnetic field microwave etching apparatus converts the gas into plasma with the electromagnetic field in the microwave region introduced into the vacuum container through the magnetic field generated by the air-core coil and the three-dimensional circuit. Since this conventional apparatus can obtain a high plasma density with a low gas pressure, it can process a sample with high accuracy and high speed. Further, for example, Applied Physics Letter (Appl. Phys. Lett.), 62, No. 13 (1993), 14
A magnetic field microwave etching apparatus using a local magnetic field by a permanent magnet is reported on pages 69 to 1471. In this device, since the magnetic field is formed by the permanent magnet, the device cost and the power consumption can be remarkably reduced as compared with the conventional device. In addition, Japanese Patent Laid-Open No. 3-122294 discloses 100 MH.
It is disclosed that plasma is generated by a high frequency of 1 GHz from z and is efficiently etched using a mirror magnetic field. Further, JP-A-6-224155 describes that a comb-shaped antenna is used to generate a plasma by applying a high frequency of 100 to 500 MHz to form a uniform plasma in a large diameter chamber.

Further, a narrow electrode parallel plate type (hereinafter referred to as "narrow electrode type") device has been put into practical use especially for processing a silicon oxide film. In the narrow electrode type, a high frequency of several tens to several tens of megahertz is applied to a parallel plate having an interval of 1 cm to 2 cm to form plasma. The narrow electrode type device is used in a source gas pressure range of several tens of mTorr. The narrow electrode type has the characteristic that stable and stable oxide film etching characteristics can be obtained over a long period of time.

Further, in Japanese Patent Laid-Open No. 7-307200, a radial antenna having a length of ¼ of the introduced wavelength is described as 300
It is described that a high frequency of about MHz is applied.

[0005]

However, since the magnetic field microwave etching apparatus using the local magnetic field by the permanent magnet uses a plurality of small permanent magnets, the magnetic field region plasma is mainly generated in the region. Since the uniformity of the plasma is poor, the sample to be processed is placed at a position away from the plasma generation region, and the plasma is made uniform by diffusion before use. Therefore, there is a problem that a sufficient plasma density cannot be obtained at the position of the sample to be processed and a sufficient processing speed cannot be obtained.

Further, in the ECR type apparatus such as those disclosed in JP-A-3-122294 and JP-A-6-224155, the magnetic field microwave plasma source introduces electromagnetic waves from a position facing the sample, so that the sample facing position is Only insulators can be laid. As a result, the ground electrode, which is necessary when applying a high frequency bias to the sample to be processed, cannot be installed at a position facing the sample to be processed, which is an ideal position, and there is a problem that the bias becomes nonuniform. .

Further, since the narrow electrode type has a relatively high gas pressure, the directivity of the active species in the plasma becomes non-uniform at a level of 0.2 micron or less, the fine workability is poor, and the plasma density is low. Since it is low, there is a problem in that the etching rate is low. On the other hand, in an apparatus using a so-called high-density plasma source such as an ECR type or an inductively coupled type, the dissociation of the raw material gas proceeds too much, the chemical reaction in the vapor phase or on the wafer surface is difficult to control, and stable etching characteristics are difficult to obtain. Have a problem. In particular, in the etching of silicon oxide film, it is a process to obtain the selection ratio by competing etching and deposition, so if the controllability of the reaction is poor, the selection ratio and deep hole processing (high aspect processing) performance will be significantly affected. give.

Further, in the comb-shaped antenna described in JP-A-6-224155 and the radial antenna described in JP-A-7-307200, the uniformity of plasma is improved as compared with the case where no antenna is used. However, it is still impossible to obtain high uniformity.

An object of the present invention is to generate a highly uniform magnetic field microwave plasma with low power consumption even when the processing area of a sample to be processed is wide, and to have excellent fine processing property, high selection ratio and high aspect ratio. An object of the present invention is to provide a plasma processing apparatus that can be processed and can perform high-speed processing.

Another object of the present invention is to provide a plasma processing apparatus in an ECR type apparatus, in which a ground electrode can be installed at a position facing a sample to be processed and a high frequency bias can be easily made uniform. It is in.

[0011]

The first object is achieved by supplying an electromagnetic wave from a power source to a flat conductor plate and radiating the electromagnetic wave for forming plasma from the conductor plate. By supplying the electromagnetic waves from the plane, the electromagnetic waves can be uniformly supplied in the wafer direction, so that high uniformity of plasma can be obtained.

Further, the frequency is 300 MHz to 1 GH.
When supplying electromagnetic waves in the UHF band of z, 300 MH
Electromagnetic waves from z to 1 GHz have a wavelength of 30 cm to 80 c
Since it is m, it is about the same as the vacuum container diameter of a large diameter plasma processing apparatus of about 8 inches to 16 inches, and is suitable for processing a large diameter wafer.

The gas pressure of the etching gas is set to 0.11.
When the range is from 3 to 3 Pa, the directivity of the active species that contributes to etching is adjusted, the etching rate is increased, and there is an effect of being particularly excellent in fine workability. If the gas pressure is too low, the plasma density will be low, and the desired etching rate will not be obtained. On the other hand, if the gas pressure is too high, the directivity will not be uniform.

Further, by selecting the material of the conductor plate and the etching gas so that the conductor plate and the etching gas are reacted to form the active species required for etching,
The desired active species can be efficiently obtained, and the reaction becomes easy to control. In particular, when an electric field having a frequency in the UHF band and an electric field having a frequency different from the frequency in the UHF band are superposed and supplied to this conductive plate, the bias applied to the conductive plate becomes large and the reactivity between the conductive plate and the reaction gas is increased. It becomes possible to generate more desired active species that contribute to the etching reaction.

The second object is achieved by providing an electrode composed of an electromagnetic wave radiation antenna, a dielectric and a ground potential conductor at a position facing the sample in the reaction vessel.
As described above, since the ground potential can be provided at the position facing the sample, the wafer is uniformly biased, and as a result, the etching rate at the center and the edge of the wafer can be made uniform. it can. Note that, with the above structure, the antenna shape does not necessarily have to be planar, and a conventional radial or comb antenna may be used.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION

(Example 1) In this example, the source gas introduced into the gas phase was made into plasma by the synergistic effect of the electromagnetic wave and the magnetic field in the UHF band, and a conductor plate was placed at a position facing the sample to be processed. The structure is such that the active particles acting on the surface of the sample to be processed can be controlled by the reaction with the above plasma. It is possible to add a function of applying a high-frequency electric field to the conductor plate to efficiently carry out the reaction. This conductor plate is UH
It has both the function of radiating the F band electromagnetic wave and the function of the counter electrode of the high frequency electric field applied to the sample to be processed.

This device is shown in FIG. In the embodiment of FIG. 1, the air-core coil 102 is arranged around the vacuum container 101. In the vacuum vessel 101, 50 is provided by the coaxial line 103.
An electromagnetic wave of 0 MHz is supplied by the UHF band power source 104. FIG. 2 shows a detailed view of the UHF band electromagnetic wave supplying section.
The electromagnetic wave introduced into the vacuum is the conductor plate 105 having an earth potential.
Is supplied to a circular conductive plate 107 made of graphite, which is adjacent to the circular conductive plate 107 via a dielectric 106 made of quartz. The diameter of the circular conductor plate 107 is set so that the resonance mode of electromagnetic waves can be obtained on the circular conductor plate. In this embodiment, a circular conductor plate 107 having a diameter of about 15 cm that can excite TM11 mode is used. The TM11 mode is a form of electromagnetic wave propagation.
In the present embodiment, the lowest-order standing wave distribution of electromagnetic waves formed between the circular conductor plate and the ground potential conductor is the fundamental mode. The UHF band electromagnetic wave is fed onto the circular conductor plate 107 so as to avoid the center as shown in FIG. When the UHF band electromagnetic wave is fed at the central position of the circular conductor plate 107, the node of the standing wave of the electromagnetic wave voltage on the circular conductor plate corresponds to that position, so that the electromagnetic wave cannot be efficiently radiated into space. Therefore, in the configuration of this embodiment shown in FIG. 2, the UHF band electromagnetic wave is fed to the eccentric position to obtain high electromagnetic wave radiation efficiency. U as shown in FIG.
The output of the HF band power source 104 is connected to a high-pass filter 108 that passes 100 MHz or more and a low-pass filter 109 that passes 20 MHz or less. One end of the low pass filter 109 is connected to ground or a high frequency power supply 116 of 300 kHz. Further, a high frequency power source 112 of 800 kHz is connected to a sample table 111 on which the sample 110 to be processed is installed. A temperature control means 113 is installed on the sample table 111 so that the sample 110 to be processed is always kept at a constant temperature. In this embodiment, the temperature of the sample 110 to be processed is always set to about 60 degrees Celsius. The temperature of the circular conductor plate 107 that radiates electromagnetic waves is also controlled by the temperature control means 114 installed on the conductor plate 105 at the ground potential. The circumference of the circular conductor plate 107 is covered with a ring 115 made of aluminum oxide (alumina). The circumference of the circular conductor plate 107 is the position where the electric field of the UHF band electromagnetic wave is most strongly distributed, and the ring 115 prevents local plasma formation at the circumference of the circular conductor plate 107 to form uniform plasma. It will be possible. In this embodiment, ring 1
Although the material of 15 is alumina, the ring 115 is a material that can transmit an electromagnetic wave, and since it is sufficient that impurities that cause a problem during processing of a semiconductor element are less likely to occur, quartz, silicon nitride, The same effect can be obtained by using boron nitride, steatite, or zirconia. A raw material gas is introduced into the vacuum container 101 by the raw material gas introduction means 116. In this example, a raw material gas prepared by mixing C ₄ F ₈ and argon was used as the raw material gas and introduced into the vacuum container 101 at 5 to 15 mTorr. With this basic structure, the silicon oxide film is etched in this embodiment.

Next, the operation of the embodiment shown in FIG. 1 will be described. An electromagnetic wave for forming plasma is a circular conductor plate 10 made of graphite from a UHF band power source 104 via a coaxial line 103.
7 is supplied. The circular conductor plate 107 forms a microstrip line resonator by being formed on the conductor plate 105 at the ground potential via the dielectric 106. Circular conductor plate 107
Due to this resonator structure, a high-frequency current flows with high efficiency on the circular conductor plate surface and radiates electromagnetic waves to the space on the plasma side. In this way, the raw material gas is turned into plasma by the interaction between the electromagnetic wave radiated from the circular conductor plate 107 and the magnetic field generated by the air-core coil 102. At this time, the magnetic field in the vacuum container 101 is set to a magnitude (100 to 250 gauss) that satisfies the condition of electron cyclotron resonance with respect to an electromagnetic wave of 500 MHz, so that plasma can be formed with high efficiency. .

As shown in FIG. 3, when a plasma is formed by using the electron cyclotron resonance phenomenon with electromagnetic waves in the UHF band, the electron density is higher than that in the microwave band of 2.45 GHz which is conventionally used in the electron cyclotron resonance type plasma. It is possible to achieve a high temperature and a low electron temperature. Since the dissociation of the source gas in the plasma depends on the electron temperature, low dissociation plasma can be formed. Further, since the plasma formation mechanism uses electron cyclotron resonance, it is possible to form a high density plasma with a low gas pressure as in the conventional electron cyclotron resonance type using a microwave band. As a result, the problem of controllability of the etching reaction due to high dissociation, which has been a problem with conventional high-density plasma sources, can be solved.

Next, the plasma generation efficiency in ECR plasma with respect to the electromagnetic wave frequency will be described. The plasma generation efficiency is determined by the balance between the generation rate of electron and ion charged particles and the loss rate. First, the generation rate of charged particles will be described. The plasma heating mechanism of ECR plasma at a gas pressure of 1 to several tens of mTorr is mainly of two types, that is, an ECR phenomenon and an electron collision heating mechanism.
ECR heating efficiency is determined by the size of the ECR area,
The larger the value, the higher the heating efficiency. The size of the ECR region is almost inversely proportional to the size of the magnetic field gradient and the electromagnetic wave frequency.
Therefore, the heating efficiency due to the ECR phenomenon tends to be higher when the electromagnetic wave frequency is lower. The heating efficiency of the electron collision heating mechanism depends on the ability of the electrons to follow the oscillating electric field of electromagnetic waves. In the microwave region (for example, 2.45 GHz) used in the conventional ECR, the electrons cannot sufficiently follow the vibration of the electromagnetic field due to the inertia of the electrons, and the heating efficiency becomes low. Therefore, the lower the frequency, the higher the efficiency of the collision heating. However, if the electromagnetic wave frequency is too low, the energy loss due to the collision of electrons with the particles in the gas phase, the wall of the vacuum container, etc. becomes large, and the heating efficiency becomes low. Therefore, the efficiency due to collision heating is the most in the UHF band of the present invention. It is efficient. Next, the loss rate of charged particles will be described.
When the electromagnetic wave frequency is low, the magnetic field required for ECR is small. However, since the magnetic field has the function of confining plasma in the space and reducing the loss, the loss rate is accelerated in a low magnetic field, which becomes a factor to reduce the plasma generation efficiency.
Therefore, it was stated that the generation rate becomes faster when the electromagnetic wave frequency is low and it is effective for the plasma generation efficiency (however, it is counterproductive if it is too low in the collision heating mechanism), but it is also considered comprehensively because the loss rate of charged particles also becomes faster. Therefore, the plasma generation efficiency becomes low. FIG. 16 summarizes this phenomenon as a relationship between ECR plasma generation efficiency and electromagnetic wave frequency. When the electromagnetic wave frequency is low, the plasma generation efficiency becomes low due to the increase of electron energy loss in the collision heating mechanism and the decrease of the plasma confinement effect due to the small magnetic field strength, and when the electromagnetic wave frequency is high, the ECR region The plasma generation efficiency decreases due to the decrease and the followability of the electron to the electromagnetic field vibration. Therefore, as shown in FIG. 16, in the ECR method capable of forming good plasma even at a low gas pressure, as shown in FIG.
The F band has the highest plasma generation efficiency. In the UHF band, not only high plasma generation efficiency can be obtained, but also the required magnetic field strength is lower than that in the conventional microwave band, so that the magnetic field formation, which conventionally required large power, can be significantly saved. High plasma generation efficiency means that a high plasma density can be maintained at a low electron temperature, and plasma formation that suppresses dissociation of the source gas is possible.

Next, the reaction control method will be described. From the above description, low dissociation plasma was realized by forming electron cyclotron resonance plasma with UHF band electromagnetic waves. However, it is difficult to control the reactive species ideal for etching silicon oxide film only by low dissociation. For example, when a plasma is formed using a CFC-based gas (C ₄ F ₈ in this embodiment), a reactive species useful for etching a silicon oxide film is C.
F and CF ₂ . Even if a relatively large amount of these reactive species can be formed by the low dissociation plasma, a large amount of fluorine atoms will be generated. Fluorine atoms are the main cause of the decrease in the selection ratio with respect to silicon, the resist, and the nitride film during etching of the silicon oxide film, and are particles that are not very preferable as etching conditions. Therefore, in the present invention, the circular conductor plate 107 that radiates electromagnetic waves is formed of graphite so that the surface of the graphite reacts with fluorine atoms.
By reacting fluorine on the surface of graphite, harmful atomic amount of fluorine can be reduced, and effective CF and CF ₂ can be generated and reflected in etching of the sample to be processed. In particular, the circular conductor plate 107 facing the sample 110 to be processed
By using graphite as the material, the reaction on the surface of the graphite can be most effectively reflected on the sample 110 to be processed. By adjusting the magnetic field generated by the air-core coil 102, an electron cyclotron resonance magnetic field is formed between the sample 110 to be processed and the circular conductor plate 107, so that the sample 110 to be processed and the circular conductor plate 107 are close to each other (the surface of the circular conductor plate 107). Plasma can be formed even in a state in which the reaction of (1) can be highly efficiently reflected in the reaction of the surface of the sample to be processed. In this embodiment, the sample 110 to be processed and the circular conductor plate 107 are
The structure is such that the distance between the two can be varied from 2 cm to 30 cm, and the structure can be adjusted to a position where both the uniformity of plasma and the reflection efficiency of the reaction on the surface of the circular conductor plate 107 to the surface of the sample to be processed can be compatible. ing. The temperature of the circular conductor plate 107 that radiates electromagnetic waves is controlled by the temperature control means 114 installed on the conductor plate 105 at the ground potential, and is always kept at a constant temperature. This stabilizes the reaction on the circular conductor plate 107. Further, in this embodiment, the circular conductor plate 107 is connected to the ground via the low pass filter 109. As a result, the circular conductor plate 107 is applied to the high frequency of 800 kHz applied to the sample table 111.
Acts as a ground electrode, and the bias applied to the sample to be processed can be made uniform. In this embodiment, the circular conductor plate 1
Although graphite is used for 07, even if silicon is used, it has a similar reaction control function because it has a fluorine consumption effect. In this embodiment, C ₄ F _{8 is} used to etch the silicon oxide film.
A raw material gas in which oxygen was mixed was used as a base, but CF ₄ , C ₂ F ₆ , CHF ₃ , CH ₂ F ₂ and C were used as the main gas in other cases.
It goes without saying that the same effect can be obtained by using H ₃ F. The same effective effect can be obtained by using hydrogen, CO, or a rare gas as the additive gas in addition to oxygen.

In this embodiment, the electromagnetic wave in the UHF band is 500
We used electromagnetic waves of MHz, but from 300MHz to 1GHz
The same effect as shown in FIG. 3 can be obtained by using the above electromagnetic wave.
Electromagnetic waves from 300 MHz to 1 GHz have a wavelength of about 30.
cm to 80 cm, which is about the same as the vacuum vessel diameter of a large-diameter plasma processing apparatus of 8 inches or more, especially 12 inches or more wafers, and a standing wave of a higher mode accompanied by instability and nonuniformity of plasma in the vacuum vessel. Is less likely to occur, and the magnetic field strength required for plasma formation is smaller than that in the case of using a conventional microwave. Therefore, when plasma is formed with UHF electromagnetic waves in the frequency range, a plasma processing apparatus suitable for processing a large diameter wafer can be realized at low cost. Therefore, the frequency range of the UHF band electromagnetic wave used for plasma formation in the present invention is set to 300 MHz to 1 GHz.

In this embodiment, the high frequency electric field applied to the sample to be processed was set to 800 kHz, but from 100 kHz to 20 MHz.
The same effect can be obtained by applying a high frequency electric field of Hz.

In this embodiment, the dielectric material 106 on which the circular conductor plate 107 is installed is made of quartz, but aluminum oxide, silicon nitride, boron nitride, silicon carbide,
The same effect can be obtained by using zirconia, Pyrex glass or Teflon.

In this embodiment, the case where the silicon oxide film is etched has been described, but the circular conductor plate 107 is made of silicon, graphite, aluminum or stainless steel.
It can be applied to etching of aluminum, silicon, and tungsten by selecting a type and using a chlorine-based gas as a source gas.

In the present embodiment, the active particle species was controlled by the reaction on the circular conductor plate 107 arranged at the position facing the sample. However, 50% or more of the vacuum vessel wall in contact with plasma was made of the same material. The same control of active particle species is possible by forming the particles. At this time, by installing the high-frequency electric field applying means and the temperature control means on the wall, it becomes possible to control the active particle species with high accuracy. The high-frequency electric field applied to the wall is in the range of 100 kHz to 20 MHz, which is similar to the high-frequency electric field applied to the sample to be processed, and ions can be efficiently accelerated to promote the reaction. However, unless the frequency of the high-frequency electric field applied to the sample to be processed is doubled or more, it is difficult to design the filters and the mutual power supplies are affected. Therefore, for example, the high frequency electric field applied to the sample to be processed is 800
It is preferable that the frequency is set to kilohertz and the high frequency electric field applied to the wall is set to 300 kilohertz. This is U on the circular conductor plate 107.
The same applies to the high-frequency power source 116 that is applied simultaneously with the HF band electromagnetic wave, and the frequency of the high-frequency power source 116 must be 100 kilohertz to 20 megahertz and at least twice the frequency of the high-frequency electric field applied to the sample to be processed. is there.

In this embodiment, the circular conductor plate 107 is shown in FIG.
The same effect can be obtained by forming the slit 120 as shown in Fig. 3 and forming plasma by using the electromagnetic wave radiated from the slit. Further, by optimizing the size or number of slits, more uniform plasma formation can be achieved. Can be realized.

(Embodiment 2) A plasma processing apparatus of Embodiment 2 is shown in FIG. In FIG. 5, the electromagnetic wave supply to the circular conductor plate serving as the electromagnetic wave radiation antenna in the embodiment of FIG. 1 is devised so that the electromagnetic wave radiated from the circular conductor plate is circularly polarized wave which is efficient for plasma formation. Is an example. Since the general structure is the same as that of the embodiment of FIG. 1, only the different electromagnetic wave supplying section will be described.

An electromagnetic wave of 500 MHz is supplied from the UHF band power source 205 to the vacuum container 201 by the coaxial line 202. The electromagnetic waves introduced into the vacuum are supplied to a graphite circular conductor plate 208 formed on a conductor plate 206 having an earth potential via a dielectric 207 made of quartz. As for the electromagnetic wave supply to the circular conductor plate 208, the electromagnetic wave from the coaxial line 202 is divided into two systems as shown in FIG.
Are supplied to two points (details are shown in FIG. 6). By shifting the length of the electromagnetic wave transmission path 203 divided into two by a quarter wavelength, the phase of the electromagnetic wave fed to the circular conductor plate 208 can be deviated by 90 degrees. The electromagnetic waves 90 degrees out of phase are combined in the shape of a circular conductor plate to form a rotating electric field, which is circularly polarized and radiated from the circular conductor plate 208 into the space. As in the embodiment of FIG. 1, the diameter of the circular conductor plate 208 is set so that the resonance mode of electromagnetic waves can be obtained on the circular conductor plate. In this embodiment, FIG.
A circular conductor plate having a diameter of about 15 cm, which is capable of exciting the TM11 mode, was used as in the above example.

Other operations and details of this embodiment are similar to those of the embodiment of FIG.

(Third Embodiment) FIG. 7 shows a third embodiment of the present invention. This embodiment is different from the previous embodiment shown in FIG. 1 mainly in the method of radiating UHF band electromagnetic waves for forming plasma. In the embodiment of FIG. 7, the air-core coil 302 is arranged around the vacuum container 301 as in the embodiment of FIG. Vacuum container 30
An electromagnetic wave of 500 MHz is supplied from the UHF band power source 304 through the coaxial line 303. The electromagnetic wave introduced into the vacuum is supplied to the electromagnetic wave radiating antenna 308 which is circumferentially arranged by a microstrip line 307 formed on a conductor plate 305 having an earth potential via a dielectric 306 made of quartz. Further, a graphite circular conductor plate 309 having an earth potential is installed in the central portion. FIG. 8 shows details of the electromagnetic wave radiation antenna 308. Coaxial line 30
The outer conductor 3 is connected to the conductor plate 305 having a ground potential, and the core wire is divided into four and connected to the respective electromagnetic radiation antennas 308 arranged in a circle. Electromagnetic radiation antenna length is 1/2
It is made at an integral multiple of the wavelength (wavelength within the dielectric 306).
In this embodiment, the one having a length of ½ wavelength of about 15 cm was used. Each electromagnetic radiation antenna 3 from the coaxial line 303
The lines connected to 08 are connected by changing the line length by 1/4 wavelength. As a result, each electromagnetic radiation antenna 3
The electromagnetic waves can be supplied to 08 by shifting their phases by 90 degrees, and the reflected electromagnetic waves from each electromagnetic wave radiation antenna 308 are canceled at the feeding point 309. In addition, each electromagnetic radiation antenna 3
The combined electric field of the electromagnetic waves emitted from 08 becomes a rotating electric field field, and the plasma formation efficiency due to the interaction with the magnetic field increases.

In this embodiment, the graphite circular conductor plate 3 is used.
09 functions as a reaction control function in the embodiment of FIG. 1 and as a ground electrode for a high frequency electric field applied to the sample 310 to be processed. The reaction control method and the mechanism as the ground electrode are the same as those in the embodiment shown in FIG. However, since the graphite circular conductor plate 309 in this embodiment does not need to radiate electromagnetic waves, it is easy to directly incorporate a temperature control function, a gas supply mechanism, and the like into the circular conductor plate. It has the advantage that the above reaction stability is improved. Further, similar to the embodiment of FIG. 1, even if the graphite circular conductor plate 309 is made of silicon, the same reaction control can be performed. further,
As in the embodiment of FIG. 1, it is possible to apply a high frequency electric field of 100 kHz to 20 MHz to the graphite circular conductor plate 309 and control the reaction amount and reaction mechanism on the surface by the bias.

In this embodiment, the active particle species was controlled by the reaction on the graphite circular conductor plate 309 arranged at the position facing the sample. However, 50% or more of the vacuum vessel wall in contact with plasma was made of the same material. The same control of active particle species is also possible by forming with. At this time, by providing a bias applying means and a temperature control means on the wall, it is possible to control the active particle species with high accuracy.

The strip line is a conductor film having a ground potential and a dielectric film on which a conductor line is formed, and transports electric power. Also, electromagnetic waves are supplied to this conductor line.

(Fourth Embodiment) FIG. 9 shows a plasma processing apparatus according to a fourth embodiment of the present invention. This embodiment is different from the first embodiment in that a permanent magnet is used for forming a magnetic field. A permanent magnet 402 having a diameter of 30 cm, a thickness of 10 cm, and a surface magnetic flux density of 1000 Guss at the center is provided on the outer upper side of a cylindrical vacuum container 401.
Is installed. The permanent magnet 402 is movable in the vertical direction, which is the axial direction of the cylindrical vacuum container, and
The magnetic field distribution in the vacuum container 401 can be controlled by changing the position of 2. A hole having a diameter of about 4 cm is provided at the center of the permanent magnet 402, and the coaxial line 4 is inserted through the hole.
An electromagnetic wave of 500 MHz is introduced into the vacuum container 401 by 03. An air-core coil 404 is installed around the outside of the vacuum container 401, and the magnetic field generated by the air-core coil 404 controls the magnetic field distribution formed by the permanent magnets 402. The coaxial cable 403 introduced into the vacuum container 401 is a radial strip in which the outer conductor of the coaxial line 403 is connected to the plate-shaped ground electrode 405, and the core wire of the coaxial line 403 is close to and parallel to the plate-shaped ground electrode 405. Central part of line 406 (feed point) 4
12 is connected. Electromagnetic wave power is supplied to the other end of the coaxial line 403 from an electromagnetic wave oscillator (not shown) via the waveguide 414 and the coaxial converter 413.

FIG. 10 is an enlarged view of the radial strip line portion in FIG. 9, and FIGS. 10A and 10B are a side sectional view and a plan view seen from the lower part of the drawing, respectively. As shown in FIG. 10, in this embodiment, four strip lines are radially arranged at equal angles from the center point (feed point) 412. The radial strip line 406 is entirely covered with quartz glass 407.

Returning to FIG. 9, a sample stage 409 is provided in the vacuum container 401, and the sample stage 409 is provided with a sample temperature control mechanism 410 and a high frequency bias applying means 411. A sample 408 to be processed (diameter 20 cm) is placed on the sample table 409. The microwave supplied by the coaxial cable 403 propagates between the radial strip line 406 and the flat ground electrode 405, and the sample to be processed 4
It radiates electromagnetic waves in the 08 direction. Thereby, the vacuum container 40
As a result, it is possible to uniformly radiate an electromagnetic wave over a wide range within 1 and realize highly uniform plasma formation.

Next, the operation of the apparatus shown in FIG. 9 will be described. By the permanent magnet 402 and the air-core coil 404, an electron cyclotron resonance magnetic field (about 178 since the electromagnetic wave used is 500 MHz is used) near the upper part of the sample 408 to be processed in the vacuum container 401.
Gauss) is formed. The magnetic field is mainly the permanent magnet 4
The magnetic field generated by the air-core coil 404 formed by No. 02 has an auxiliary role of concentrating the magnetic flux of the permanent magnet 402 which is about to diverge rapidly. Therefore, the current flowing through the air-core coil 404 may be small. The electromagnetic wave supplied to the central portion 412 of the radial strip line 406 via the coaxial cable 403 propagates along the elements of each radial strip line while radiating the electromagnetic wave into space. At this time, the length of each element of the radial strip line 406 is an integral multiple of the half wavelength of the electromagnetic wave used ± 20%, so that the electromagnetic wave can be efficiently propagated and radiated. The raw material gas introduced into the vacuum vessel 401 is turned into plasma by the interaction between the microwave radiated by the radial strip line 406 and the magnetic field.

Radiation of electromagnetic waves is a radial strip line 4
Since it is performed according to No. 06, the length of the strip line 406 makes it possible to radiate a uniform electromagnetic wave even in a vacuum container having a large diameter, and to realize a large diameter and high uniform plasma. When plasma is generated according to this embodiment, the main magnetic field is formed by the permanent magnet, so that the power consumption by the electromagnet, which is a problem in the conventional device, can be reduced. In addition, since a large-diameter permanent magnet is used for plasma generation, it is possible to cause electron cyclotron resonance near the position of the sample to be processed, and microwave power in the range from the electromagnetic wave introduction part to the electron cyclotron resonance position. It is possible to realize sufficient ion and radical densities for the absorption. Workpiece sample 408
By applying a high frequency bias by the high frequency bias applying means 411, ions can be accelerated from the plasma and incident on the sample 408 to be processed. Since the plasma is in contact with the flat plate-shaped ground electrode 405 installed at a position facing the sample to be processed, the inhomogeneity of the high frequency bias in the surface of the sample to be processed, which is a problem in the conventional apparatus, can be eliminated, and a highly uniform plasma can be obtained. Processing becomes possible.

(Fifth Embodiment) FIG. 11 shows the configuration of a fifth embodiment of the present invention. FIG. 11 shows a side cross-sectional view of the plasma processing apparatus and a plan view of the microwave radiating section viewed from the lower side of the drawing. However, in FIG. 11, a high frequency electric field applying mechanism and a cooling mechanism for the sample to be processed are omitted for simplification. In this embodiment, a disk-shaped conductor 515 is installed near the feeding point 512 of the radial strip line 506 on the sample 508 side to prevent central concentration of electromagnetic waves and improve plasma uniformity. It was made. In general, the formed plasma is extinguished on the wall, so that the peripheral portion tends to have a low density and the central portion has a high density in the radial direction of the vacuum container 501. Therefore, the electromagnetic wave radiation from the central part
Suppression by 15 realizes uniform plasma. Further, by using this on-disk conductor 515 as a ground electrode, it acts as a ground electrode for a high frequency electric field applied to the sample to be processed in the same manner as in the embodiment of FIGS. 1 to 10, and the disk-shaped electrode 515 is changed from FIG. 1 to FIG. Similar to the embodiment described in 10, it can be made to have a reaction control function by being formed of a material such as graphite.

(Sixth Embodiment) FIG. 12 shows a sixth embodiment according to the present invention. This embodiment differs from the fourth embodiment in that the electromagnetic strip irradiation parts such as the radial strip line 606 and the earth electrode 605 are installed outside the vacuum container, and the vacuum container 60 is provided through a quartz window 607.
It is connected to 1. Compared with the embodiment of FIG. 1, this embodiment is particularly equipped with an electromagnetic wave supply unit (coaxial cable) 6 for the vacuum partition wall.
Since 03 does not pass, the vacuum container 601 can be easily manufactured.

However, this embodiment has a disadvantage that the ground electrode cannot be installed at a position facing the sample 608. Further, this embodiment is realized not only in the embodiment 4 of FIG. 9 but also in the configurations of the embodiment 1 of FIG. 1, the embodiment 2 of FIG. 5, and the embodiment 3 of FIG. it can.

(Seventh Embodiment) FIG. 13 shows a seventh embodiment of the present invention. This embodiment overcomes the disadvantages of the sixth embodiment. This is a structure in which a ground potential conductor 715 opened at a width of 200% of the width of the radial strip line 706 is installed along the radial strip line 706 on the vacuum container 701 side from the quartz window 707. Electromagnetic wave is vacuum container 701
It is radiated from the opening 716 of the ground potential conductor 715 installed on the side. As a result, the ground electrode for the high-frequency electric field applied to the sample to be processed can be realized at the position facing the sample to be processed.
By forming the ground potential conductor 715 with a material such as graphite, the same reaction control as in the above embodiment can be performed. In this embodiment, the width of the opening 716 of the ground potential conductor 715 installed on the vacuum container 701 side is set to 200% of the width of the radial strip line 706, but it is 100 to 50.
It goes without saying that the same effect can be obtained with the opening width in the range of 0%.

(Embodiment 8) FIG. 14 shows an embodiment 8 of the present invention. FIG. 14 is a side cross-sectional view of the device and a plan view of the antenna unit (a view of the antenna unit seen from below). The present embodiment is an application example of the fourth embodiment, and is intended to enhance the electromagnetic radiation efficiency from each antenna arranged radially. In this embodiment, three linear antennas 806 are formed by strip lines on the ground potential conductive plate 805. In this embodiment, the number of antennas is three, but an odd number of three or more may be used. When crossing multiple linear antennas, if you set the intersection other than the center of the antenna,
If it is an odd number, the electromagnetic wave cannot be supplied evenly. The linear antenna 806 is covered with quartz glass 807. A point deviating from a position serving as a node of the current and voltage distribution of the electromagnetic wave on each antenna is defined as an intersection point, and the intersection point is defined as an electromagnetic wave feeding position 812. By this feeding position, the electromagnetic wave transmission efficiency between each antenna and the line supplied to the antenna can be increased, and the electromagnetic wave can be efficiently supplied.

(Embodiment 9) FIG. 15 shows an embodiment of processing an integrated circuit in the plasma processing apparatus of the present invention. FIG. 15A is a process diagram of a self-aligned contact process in etching a silicon oxide film, in which a polysilicon electrode 905 and a silicon nitride 9 are formed on a silicon substrate 904.
03, and a silicon oxide film 90 which is an insulating film.
2 is an example processed using the resist mask 901. Further, FIG. 15B is a process diagram of contact processing, in which a memory cell 905 is formed on a silicon substrate 904, and a silicon oxide film 902 which is an insulating film is processed using a resist mask 901. is there. (A)
Both (b) require high processing speed and processing selectivity for a structure having a high aspect ratio with a size of 0.3 μm or less. The selectivity is an index indicating the degree to which silicon nitride or silicon is not processed in (a) and silicon is not processed in (b) with respect to a silicon oxide film which is a processing control. In the conventional plasma processing apparatus, if the plasma density is increased to obtain a high processing speed, it is difficult to dissociate the raw material gas too much and obtain high processing selectivity. However, in the present invention, since the electron temperature is low even at a high plasma density, dissociation is suppressed, and a high frequency electric field is applied to the wall or the earth electrode arranged at a position facing the electromagnetic wave introducing antenna or the sample to be processed, and the surface of each part is By adding a radical control function by the reaction in step 1, it becomes possible to achieve both high processing speed and selectivity.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example,
In the embodiment, the surface magnetic flux density at the center of the permanent magnet is 1000.
Gauss's one was used, but 200 to 5000 Ga
It is possible to select a permanent magnet used in the range of uss and adjust the required magnetic field distribution in accordance with the diameter of the permanent magnet.

In Examples 4 to 8, the permanent magnets having a diameter of 30 cm and a thickness of 10 cm were used. However, the diameter of the permanent magnet was the same as the diameter of the sample to be processed or 70% to 150% of the diameter of the sample to be processed. An effective magnetic field distribution can be formed by using a magnet having a thickness of 10% to 100% of the sample diameter. Particularly, the ideal magnetic field distribution can be formed as the diameter of the permanent magnet is larger than the diameter of the sample and the thickness is closer to the diameter. The same applies when a plurality of small magnets are densely arranged instead of a single permanent magnet to form a large-diameter permanent magnet that is equivalently magnetized in the vertical direction. When a plurality of small magnets are arranged close to each other to form a large-diameter permanent magnet that is equivalently magnetized in the vertical direction, the in-plane distribution of the magnetic field can be changed by making each small magnet movable in the vertical direction. It becomes adjustable.

In the third to seventh embodiments, the radial stripline has four elements, but the same effect can be obtained even if the striplines are formed symmetrically with the number of elements from 3 to 20. Needless to say. Similarly, in the eighth embodiment, the case where the radial strip lines are three elements is shown, but the same configuration is possible if the number is an odd number.

Although the first to eighth embodiments have been described only in the case of the air-core coil or the combination of the air-core coil and the permanent magnet for forming the magnetic field, in any of the examples, only the air-core coil or the combination of the air-core coil and the permanent magnet is used. It can be realized by any one of only the permanent magnets.

Although the strip lines are arranged radially in the fifth to eighth embodiments, the same effect can be obtained by arranging a plurality of linear strip lines in parallel and supplying power to each strip line.

[0051]

EFFECT OF THE INVENTION The power consumption of the electromagnet in the electron cyclotron resonance type plasma generator is greatly reduced, and high density ions and radicals can be supplied to the sample. Further, the ground electrode can be installed at a position facing the sample to be processed, and the high frequency bias can be made uniform.

Further, by forming plasma by electron cyclotron resonance by electromagnetic waves in the UHF band, it is possible to realize a gas phase state with low dissociation even in plasma with a low gas pressure and a high density, and a flat electrode surface for electromagnetic wave radiation can be formed. The reaction makes it possible to control the active particle species incident on the sample to be processed. As a result, it is possible to simultaneously satisfy the requirements of high precision, high selectivity, and high aspect ratio processing for ultra-precision processing of 0.2 micrometer level or less, and obtain stable etching characteristics for a long period of time.

[Brief description of drawings]

FIG. 1 is a diagram showing a first embodiment of the present invention.

FIG. 2 is an explanatory diagram of an electromagnetic wave emission unit according to the first embodiment.

FIG. 3 is a characteristic diagram of an electron cyclotron resonance plasma using UHF electromagnetic waves and conventional microwaves.

FIG. 4 is an explanatory diagram when a slit is formed in the circular conductor plate in the first embodiment.

FIG. 5 is a diagram showing a second embodiment of the present invention.

FIG. 6 is an explanatory diagram of an electromagnetic wave emitting unit according to the second embodiment.

FIG. 7 is a diagram showing Embodiment 3 of the present invention.

FIG. 8 is an explanatory diagram of an electromagnetic wave emission unit according to the third embodiment.

FIG. 9 is a diagram showing Embodiment 4 of the present invention.

FIG. 10 is an explanatory diagram of an electromagnetic wave emission unit according to the fourth embodiment.

FIG. 11 is a diagram showing Example 5 of the invention.

FIG. 12 is a diagram showing Embodiment 6 of the invention.

FIG. 13 is a diagram showing Embodiment 7 of the present invention.

FIG. 14 is a diagram showing Example 8 of the invention.

FIG. 15 is a diagram showing Embodiment 9 of the present invention.

FIG. 16 is a diagram showing a relationship between electromagnetic wave frequency and plasma generation efficiency.

[Explanation of symbols]

101 ... Vacuum container, 102 ... Air core coil, 103 ... Coaxial line, 104 ... UHF band power source, 105 ... Earth potential conductor plate, 106 ... Dielectric material, 107 ... Circular conductor plate, 108 ...
High-pass filter, 109 ... Low-pass filter, 110
... sample to be processed, 111 ... sample stand, 112 ... high-frequency power source,
113 ... Temperature control means, 114 ... Temperature control means, 115
… Ring, 116… Gas introducing means 117… Ground plate, 1
18 ... Capacitor, 119 ... Feed point, 120 ... Slit, 201 ... Vacuum container, 202 ... Coaxial line, 203 ... Transmission line, 204 ... Feed point, 205 ... UHF band power source, 206
... conductor plate of earth potential, 207 ... dielectric, 208 ... circular conductor plate, 301 ... vacuum container, 302 ... air core coil, 30
3 ... Coaxial line, 304 ... UHF band power source, 305 ... Earth potential conductor plate, 306 ... Dielectric material, 307 ... Microstrip line, 308 ... Electromagnetic wave radiation antenna, 309 ... Circular conductor plate, 401 ... Vacuum container, 402 ... Permanent Magnet, 40
3 ... Coaxial line, 404 ... Air core coil, 405 ... Flat ground electrode, 406 ... Radial strip line, 407 ...
Quartz glass, 408 ... Work sample, 409 ... Sample stand, 4
10 ... Sample temperature control mechanism, 411 ... High frequency bias applying means, 412 ... Central part, 413 ... Coaxial waveguide converter, 4
14 ... Waveguide, 501 ... Vacuum container, 502 ... Permanent magnet,
503 ... Coaxial line, 504 ... Air core coil, 505 ... Flat ground electrode, 506 ... Radial strip line, 50
7 ... Quartz glass, 508 ... Work sample, 509 ... Sample stand, 513 ... Coaxial waveguide converter, 514 ... Waveguide, 51
5 ... Disk-shaped electrode, 601 ... Vacuum container, 602 ... Permanent magnet, 603 ... Coaxial line, 604 ... Air core coil, 605 ...
Flat ground electrode, 606 ... Radial strip line,
Reference numeral 607 ... Quartz window, 608 ... Work sample, 609 ... Sample stage, 613 ... Coaxial waveguide converter, 614 ... Waveguide, 70
1 ... Vacuum container, 702 ... Permanent magnet, 703 ... Coaxial line,
704 ... Air-core coil, 705 ... Flat ground electrode, 70
6 ... Radial strip line, 707 ... Quartz window, 708
... sample to be processed, 709 ... sample stage, 713 ... coaxial waveguide converter, 714 ... waveguide, 715 ... earth potential conductor, 71
6 ... Aperture, 806 ... Linear antenna, 807 ... Quartz glass, 812 ... Feed point, 901 ... Resist mask, 90
2 ... Silicon oxide film, 903 ... Silicon nitride, 904 ...
Silicon, 905 ... Polysilicon, 906 ... Memory cell.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masashi Mori 1-280 Higashi Koikeku, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Keizo Suzuki 1-280 Higashi Koikeku, Kokubunji, Tokyo Hitachi Ltd. Central Research Laboratory of the Works (72) Inventor Tetsuro Ono 794 Higashi-Toyoi, Kudamatsu City, Yamaguchi Prefecture Stock Company Hitachi Works Kasado Factory

Claims (42)

[Claims] 1. A container, a means for introducing a reaction gas into the container, a means for exhausting the gas in the container, a stand for installing a workpiece provided in the container, and the container. And a flat plate which is provided inside and radiates an electromagnetic wave for generating plasma. 2. The plasma processing apparatus according to claim 1, wherein the flat plate is formed in contact with the plasma to be formed. 3. A container, a means for introducing a reaction gas into the container, a means for exhausting the gas in the container, a stand for installing a workpiece provided in the container, and the container. A flat plate that is provided inside and radiates electromagnetic waves at a position facing the workpiece; and a magnetic field forming means that is provided outside the container and that forms a plasma synergistically with the electromagnetic waves. Characteristic plasma processing device. 4. The flat plate for radiating the electromagnetic wave has 300
4. The plasma processing apparatus according to claim 3, wherein a first high frequency of not less than MHz and not more than 1 GHz is applied. 5. A plasma processing apparatus according to claim 4, wherein a second high frequency is applied so as to be superposed on the first high frequency. 6. The plasma processing apparatus according to claim 5, wherein the second high frequency is a frequency having a value twice or more different from the first high frequency. 7. The flat plate is provided so as to come into contact with plasma to be formed, and a substance that transmits the electromagnetic wave is provided at a peripheral portion of a surface of the flat plate that comes into contact with the plasma. The plasma processing apparatus according to claim 3. 8. The plasma processing apparatus according to claim 7, wherein the substance is any one of aluminum oxide, quartz, silicon nitride, boron nitride, steatite, and zirconia. 9. The plasma processing apparatus according to claim 3, further comprising means for varying a distance between the table and the plane plate. 10. The plasma processing apparatus according to claim 3, wherein the electromagnetic waves are radiated as circularly polarized waves. 11. A container, a means for introducing a reaction gas into the container, a means for exhausting the gas in the container, a stand for installing a workpiece provided in the container, and the inside of the container. An electrode formed of an electromagnetic wave radiating antenna, a dielectric and a ground potential conductor, which is provided at a position facing the workpiece, and is provided outside the container to form plasma in synergy with the electromagnetic wave. And a means for applying a magnetic field. 12. The plasma processing apparatus according to claim 11, wherein the electrode is formed in a planar shape. 13. The plasma processing apparatus according to claim 11, wherein the electromagnetic wave radiation antenna is formed in a flat plate shape, and a slit is formed in the flat plate. 14. The plasma processing apparatus according to claim 11, wherein the electromagnetic wave radiation antenna is linear and has a plurality of antennas. 15. The electromagnetic wave radiating antenna is linear and is formed by intersecting three or more odd-numbered antennas, and the intersecting points are located away from the center of the antenna. 11. The plasma processing apparatus according to 11. 16. The plasma processing apparatus according to claim 11, wherein a UHF band power source is connected to the electrode. 17. The antenna has a frequency of 300 MHz or more and 1 G
12. The plasma processing according to claim 11, wherein a first high frequency having a predetermined value equal to or lower than Hz and a second high frequency having a frequency having a value twice or more different from the predetermined value are superimposed and applied. apparatus. 18. The dielectric is quartz, aluminum oxide, silicon nitride, boron nitride, silicon carbide,
The plasma processing apparatus according to claim 11, which is made of any one of zirconia, Pyrex glass, and Teflon. 19. The plasma processing apparatus according to claim 11, wherein the electromagnetic wave radiation antenna is made of silicon, graphite, aluminum or stainless steel. 20. A container and a pressure in the container of 0.1 Pa
A unit for adjusting the pressure to a predetermined pressure of 3 Pa or less; a table for installing a workpiece provided in the container; a unit for applying a first high frequency wave to the table; and a unit provided in the container, A plasma processing apparatus comprising: a flat plate that radiates an electromagnetic wave at a position facing the pedestal; and a unit that forms a magnetic field for forming plasma synergistically with the electromagnetic wave. 21. A container, a means for introducing a reaction gas into the container, a means for exhausting the gas in the container, a table for installing a workpiece provided in the container, and the table. A means for applying a high frequency to, and a flat plate provided in the container, which is supplied with an electromagnetic wave for forming plasma at a position facing the pedestal from a position away from the center, and which radiates the electromagnetic wave. A plasma processing apparatus having: 22. A container, a means for introducing an etching gas composed of a compound containing a fluorine atom into the container, a means for exhausting the gas in the container, and a silicon oxide film formed in the container to form a silicon oxide film. And a means for applying a high frequency to the table, a flat plate made of graphite or silicon that emits an electromagnetic wave for forming plasma at a position facing the table, and the electromagnetic wave And a means for forming a magnetic field for synergistically forming plasma. 23. A container, a means for introducing a reaction gas into the container, a means for exhausting the gas in the container, a stand provided in the container for setting a workpiece, and the inside of the container. Is located at a position facing the workpiece, has a ground potential conductor, a dielectric, and has a linear shape, and
An electrode formed of an electromagnetic wave radiation antenna having a length within ± 20% of an integral multiple of four wavelengths, and a means which is provided outside the container and applies a magnetic field for forming plasma in synergy with the electromagnetic wave. A plasma processing apparatus having: 24. A container, a means for introducing a reaction gas into the container, a means for exhausting the gas in the container, a stand for installing a workpiece provided in the container, and the container A flat plate that is provided inside and radiates electromagnetic waves at a position facing the workpiece; and a UHF band electromagnetic wave that is supplied to the flat plate through a high-pass filter and a low-pass filter. It has a means for supplying an electromagnetic wave having a frequency twice or more different from the frequency of the UHF band, and a magnetic field forming means provided outside the container for forming plasma in synergy with the electromagnetic wave. And a plasma processing apparatus. 25. A vacuum chamber having a gas introduction part and an exhaust part, a sample installation means for installing a sample to be processed in the vacuum chamber, and a magnetic field is formed in a direction perpendicular to a surface to be processed of the sample to be processed. A magnetic field forming means, a microwave introducing means composed of a stripline near the ground potential plate installed at a position facing the processing surface, and a microwave conducting unit for supplying microwave power to the ground potential plate and the stripline. A plasma processing apparatus having a wave means, wherein the gas introduced into the gas phase is made into plasma by electromagnetic waves in the vacuum chamber. 26. The plasma processing apparatus according to claim 25, wherein the magnetic field forming means is composed of a permanent magnet and an air-core coil for controlling a magnetic field distribution of the permanent magnet, a structure including only an air-core coil, and a structure including only a permanent magnet. A plasma processing apparatus having one type of configuration. 27. The plasma processing apparatus according to claim 26, wherein the permanent magnet has a diameter within a range of 70% to 150% of a sample diameter to be processed and a thickness within a range of 10% to 100% of the diameter. A plasma processing apparatus having a certain cylindrical shape. 28. The plasma processing apparatus according to claim 26, wherein the permanent magnet is formed by arranging a plurality of small magnets close to each other. 29. The plasma processing apparatus according to claim 27 or 28, wherein at least a part of the permanent magnet is configured to be movable in a direction perpendicular to a processing plane of the sample to be processed. apparatus. 30. The plasma processing apparatus according to claim 25, wherein the strip lines are arranged radially around a feeding point. 31. The plasma processing apparatus according to claim 25, wherein a plurality of the strip lines are linear and are arranged in parallel. 32. The plasma processing apparatus according to any one of claims 25 to 29, wherein a plurality of antennas each composed of the strip line are arranged on an outer periphery of the vacuum chamber and are connected to the strip line. The feeding point of the electromagnetic wave at a position other than a position serving as a node of the voltage and current distribution of the electromagnetic wave on the antenna, and the vacuum chamber-at the feeding point, a radial surface from the central portion and a processed surface of the sample to be processed. 2. A plasma processing apparatus having a conductor line for introducing an electromagnetic wave, which is arranged in parallel with the flat plate having the ground potential. 33. The plasma processing apparatus according to claim 32, wherein electromagnetic waves having different phases are supplied to each of the antennas. 34. The plasma processing apparatus according to any one of claims 25 to 29, wherein the strip line antenna has three radial lines with the feeding point of the electromagnetic wave to the antenna as an intersection. A plasma processing apparatus, wherein the above-mentioned odd number is arranged and the feeding point is arranged at a position other than a position serving as a node of voltage and current distribution of electromagnetic waves on the antenna. 35. The plasma processing apparatus according to claim 25, wherein the strip line is covered with quartz glass. 36. The plasma processing apparatus according to claim 25, wherein the length of the strip line is an integral multiple of a quarter wavelength of an electromagnetic wave in a medium in which the strip line is installed. The plasma processing apparatus is characterized in that it is within a range of ± 20%. 37. The plasma processing apparatus according to claim 25, wherein a disk shape is provided between the strip line and the sample mounting means near the feeding point to the strip line. A plasma processing apparatus having a conductor installed. 38. The plasma processing apparatus according to claim 25, wherein the strip line is connected to the vacuum chamber through a quartz window. 39. The plasma processing apparatus according to claim 38, wherein the quartz window has a plasma side having an opening having a width of 100% to 500% with respect to the width of the antenna formed by the strip line. And the strip line is arranged between the flat plate of the ground potential and the ground potential conductor having the opening to constitute a microwave supply unit. Plasma processing apparatus. 40. A plasma, characterized in that the flat plate of earth potential according to claim 25, the ground potential conductor having an opening according to claim 36, or the disk-shaped conductor according to claim 37 is used as a plasma ground electrode. Processing equipment. 41. The plasma processing apparatus according to claim 25, wherein the processing sample setting means has a high frequency electric field applying means and a temperature control means. 42. The plasma processing apparatus according to claim 25, wherein the electromagnetic wave supplied to the strip line for plasma formation has a frequency of 400 MHz to 2.5 GHz. And a plasma processing apparatus.