TW578215B - Method to produce components or its inter-products, vacuum-processing equipment and ultra-high-vacuum CVD-reactor - Google Patents

Method to produce components or its inter-products, vacuum-processing equipment and ultra-high-vacuum CVD-reactor Download PDF

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Publication number
TW578215B
TW578215B TW91123272A TW91123272A TW578215B TW 578215 B TW578215 B TW 578215B TW 91123272 A TW91123272 A TW 91123272A TW 91123272 A TW91123272 A TW 91123272A TW 578215 B TW578215 B TW 578215B
Authority
TW
Taiwan
Prior art keywords
cvd
reactor
vacuum
patent application
component
Prior art date
Application number
TW91123272A
Other languages
English (en)
Chinese (zh)
Inventor
Hans Martin Buschbeck
Philipp Bartholet
Siegfried Wiltsche
Juergen Ramm
Original Assignee
Unaxis Balzers Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Balzers Ag filed Critical Unaxis Balzers Ag
Application granted granted Critical
Publication of TW578215B publication Critical patent/TW578215B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW91123272A 2001-10-12 2002-10-09 Method to produce components or its inter-products, vacuum-processing equipment and ultra-high-vacuum CVD-reactor TW578215B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH18892001 2001-10-12

Publications (1)

Publication Number Publication Date
TW578215B true TW578215B (en) 2004-03-01

Family

ID=4566660

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91123272A TW578215B (en) 2001-10-12 2002-10-09 Method to produce components or its inter-products, vacuum-processing equipment and ultra-high-vacuum CVD-reactor

Country Status (5)

Country Link
EP (1) EP1434898A1 (de)
JP (1) JP2005505146A (de)
CN (1) CN1568379A (de)
TW (1) TW578215B (de)
WO (1) WO2003031680A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI582888B (zh) * 2014-09-19 2017-05-11 Nissin Ion Equipment Co Ltd Substrate processing device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
JP2011168881A (ja) * 2010-01-25 2011-09-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
CN102001650B (zh) * 2010-12-28 2013-05-29 上海师范大学 冷腔壁条件下化学气相沉积制备石墨烯的方法
CN111530118B (zh) * 2020-05-21 2021-12-10 郑州大学 一种超高真空设备
CN111876752A (zh) * 2020-08-03 2020-11-03 中国科学院长春光学精密机械与物理研究所 一种mocvd装置及半导体材料生产设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607511A (en) * 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US5230925A (en) * 1990-06-25 1993-07-27 Kabushiki Kaisha Toshiba Gas-phase growing method and apparatus for the method
JP2642849B2 (ja) * 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
US6013134A (en) * 1998-02-18 2000-01-11 International Business Machines Corporation Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
JPH11297705A (ja) * 1998-04-07 1999-10-29 Kokusai Electric Co Ltd 基板加熱装置
JP3263383B2 (ja) * 1999-09-29 2002-03-04 助川電気工業株式会社 縦型加熱装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI582888B (zh) * 2014-09-19 2017-05-11 Nissin Ion Equipment Co Ltd Substrate processing device

Also Published As

Publication number Publication date
WO2003031680A1 (de) 2003-04-17
JP2005505146A (ja) 2005-02-17
EP1434898A1 (de) 2004-07-07
CN1568379A (zh) 2005-01-19

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