TW569350B - Method for fabricating a polysilicon layer - Google Patents

Method for fabricating a polysilicon layer Download PDF

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Publication number
TW569350B
TW569350B TW091132242A TW91132242A TW569350B TW 569350 B TW569350 B TW 569350B TW 091132242 A TW091132242 A TW 091132242A TW 91132242 A TW91132242 A TW 91132242A TW 569350 B TW569350 B TW 569350B
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Taiwan
Prior art keywords
layer
trenches
forming
silicon
substrate
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TW091132242A
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TW200406845A (en
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Yi-Chang Tsao
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Au Optronics Corp
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Priority to TW091132242A priority Critical patent/TW569350B/zh
Priority to US10/248,372 priority patent/US6867074B2/en
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Publication of TW569350B publication Critical patent/TW569350B/zh
Publication of TW200406845A publication Critical patent/TW200406845A/zh
Priority to US10/906,007 priority patent/US7235466B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline

Description

569350 五、發明說明（1) 本發明是有關於一種多晶；ε夕層的製作方法，且特別是 有關於一種以溝渠（trench)中未熔融之非晶矽層作為成核 位置’並進行橫向結晶（lateral cryStallizati〇n)之多 晶矽層的製作方法。 低溫多晶矽薄膜電晶體液晶顯示器（L〇w Temperature P〇lySilic〇n Liquid Crystal Display ，LTPS LCD)有別 於一般傳統的非晶矽薄膜電晶體液晶顯示TFT — LCD) ’其電子遷移率可以達到2〇〇cm2/y — sec以上，故可使 薄膜電晶體元件所佔面積更小以符合高開口率的需求，進 而增進顯示器亮度並減少整體的功率消耗問題。另外，由 於電子遷移率之增加可以將部份驅動電路與薄膜電晶體製 程一併製造於玻璃基材上，大幅提升液晶顯示面板的可靠 度’且使得面板製造成本大幅降低。因此，低溫多晶石夕薄 膜電晶體液晶顯示器的製造成本較非晶石夕薄膜電晶體液晶 顯示器低出許多。此外，低溫多晶矽薄膜電晶體液晶顯示 器具有厚度薄、重量輕、解析度佳等特點，十分適合應用 於要求輕巧省電的行動終端產品上。 低溫多晶矽薄膜電晶體液晶顯示器（LTPS —LCD)中，薄 膜電晶體的通道層通常係以準分子雷射退火製程（Excimer Laser Anneal ing，ELA)形成，此通道層的品質通常取決 於多晶石夕晶體的大小（g r a i n s i z e)及其均勻性 (uniformity)，而晶體的大小與晶體的均勻性都與準分子 雷射在能量上之控制有直接的關連。 第1 A圖至第1 C圖繪示為習知多晶矽層的製作流程示意
9787twf.ptd 第5頁 569350 五、發明說明（2) 圖。首先請參照第1 A圖，裎桠一 |Λ Λ t ^ AM 〇 棱供一基材100，此基材100通常 =/Λ Λ人材100上形成一緩衝層102，此緩衝 層102l*為一包έ有氮化矽層以及氧化矽層之積層結 接^請參照第1Β圖與第lc圖，在形成緩衝層1〇2之 後，接者形成一非晶矽層丨〇 4於緩衝層丨〇 2上。 :d分子雷射熱退火製程，控制準分子雷射照射於ϊ晶 能量’使得非晶矽層m近乎完全熔融，僅於 、友衝層102表面上保留些許的結晶核（seed 〇f 。之後’這些熔融的液態石夕會從上述之 始結晶成為一多晶矽層106，而此多晶矽層1〇6中 曰存在有分佈不甚均勻的晶體邊界丨〇8。 上述的準分子雷射熱退火製程中，若準分子雷射的能 = =LG(SUper Lateral Growth)點時，結晶核的分佈 =度會瞬間降的很低，造成多晶矽層的晶粒尺寸小且均勻 不佳。因此，準分子雷射的能量必須控制的十分精準， ^製作出晶體尺寸與均勻性皆合乎需求的多晶石夕層，故 ^製裎的製程裕度很小。 第2圖繪示為習知藉由緩衝層上之開口進行多晶矽層 ^作的示意圖。請參照第2圖，提供一基材2〇〇，此基材曰 Y通常為玻璃基板。接著於基材2〇〇上形成一緩衝層 ，此緩衝層202通常為一包含有氮化矽層以及氧^矽層 積層結構。為了改善所形成之多晶矽層中的晶體尺寸、 句勻性以及製程裕度的問題，習知於緩衝層2〇2中製作多
9787twf 第6頁 569350 五 發明說明（3) _ —___ 個以陣列方式排列的開口2〇4，這此 熱退火製程中將扮演相當重要的角一色汗在車f準分子雷射 火的過程中，開口 204以外的區域上的非晶二子雷射熱退 不）將會完全被熔融成液態的發， 二（未、、會 未、，日）未兀王熔融，因此液態的石夕可從Η 口 2〇4底部開始結晶（橫向成長）為一 义7攸開口 =’開始結晶的位置即為開口 2〇4的位置，‘可以f Ζ 控制結晶核的數量與其分佈的位置。 有效的 第3圖繪示為習知多晶矽層的晶體邊示咅 ^ 照第3圖，由於開口2〇4底部的非晶 〜各圖。喷參 液態的石夕會從開口 204底部開^主外^全^融，故 能☆ 9 ^ 1同始彺外成長。由於熔融的液 ::疋由開口 204往外橫向成長，故在相鄰的開口2 :存在有晶體邊界300，而這些晶粒邊界3〇〇將直接受限J 歼’口 204彼此之間的距離。由於開口2〇4係以陣列的方式排 歹||，其在X方向上與y方向上的晶粒成長皆受到相鄰開口 4的限制’因此’此方式雖可有效控制結晶核的分佈情 况’但對於晶粒尺寸仍有所限制。 、因此，本發明之目的在提出一種多晶矽層的製作方 法’所形成的多晶矽層具有較大的晶體尺寸以及較佳的 勻性。 本發明之另一目的在提出一種多晶矽層的製作方法， 叮以使得雷射熱退火製程的製程裕度（pr〇cess wind〇w)大 為提昇。 本發明之再一目的在提出一種多晶矽層的製作方法，
569350 五、發明說明（4) ----- 所形成的多晶矽層具有較少的晶體邊界η boundary ) 〇 為達本發明之上述目的，提出一種多晶矽層的製作方 >去丄，括下列步驟··（a)提供一基材；〇)於基材上形成一 ，、2夕個第一溝渠之緩衝層；（〇於緩衝層上形成一非晶 二以及U)進行一雷射退火製程，使得非晶矽層熔融 ^ 這些第一溝渠上方開始結晶，以形成一多晶矽層。 本發明中，具有第一溝渠的緩衝層之形成方法例如包 舌下列步驟：（a)於基材上形成一氮化矽層；（b)於氮化矽 層中I成多個第一溝渠；以及（c )於氮化石夕層上形成一共 形之氧化矽層，以於氧化矽層中自然形成多個與第二溝、 對應的第一溝渠。 〃 本發明中，具有第一溝渠的緩衝層之形成方法例如包 括下列步驟：（a )於基材上形成一氮化矽層；（b)於氮化矽 層上形成一氧化矽層；以及（c)於氧化矽層中形成多個 一溝渠。 ^ 本發明上述之第一溝渠及/或第二溝渠例如係藉由微 影/敍刻的方式形成，而上述之雷射退火製程例如為一準 分子雷射退火製程。 ^ 為讓本發明之上述目的、特徵、和優點能更明顯易 懂，下文特舉一較佳實施例，並配合所附圖式，作詳 明如下： 、过 圖式之標示說明： 100、200、400、600、700 :基材
^787twf.ptd 第8頁 569350
102、202、402、602、702 ··緩衝層 104、606、706 :非晶石夕層 106、608、708 :多晶石夕層 108、300、500、610、710 :晶體邊界 204 :開口 404、604、704b :第一溝渠 602a、702a :氮化矽層 602b、702b :氧化矽層 704a :第二溝渠 較佳實施例 第4圖繪示為依照本發明一較佳實施例藉由 之溝渠進行多晶石夕層製作的示意圖。請參照第4圖衡^ 一基材400，此基材400通常為玻璃基板。接著於基材 1⑽ 上形成一緩衝層402，此緩衝層402例如為一包含有 層以及氧化矽層之積層結構（將詳述於後）。為了改呈 形成之多晶矽層中的晶體尺寸、肖勻性以及製程裕度的問 題，本實施例於緩衝層402中製作多個彼此平行之 渠404，這些第一溝渠404在後續之準分子雷射熱退火製程 中將扮演提供結晶核的角色。在準分子雷射熱退火的過程 中，第一溝渠404以外的區域上的非晶矽層（未繪示）將 會完全被熔融成液態的矽，而第一溝渠4〇4底部的非晶矽 層（未緣示）並未元全被熔融，因此液態的石夕可從第一溝 渠404底部開始結晶（橫向成長）為一多晶矽層。由上述 可知，開始結晶的位置即為第一溝渠4〇4的位置，故可以
569350
有效的控制結晶核分佈的位置。 第5圖繪示為依照本發明一較佳實施例多晶矽層 體邊界示意圖。請參照第5圖，由於第一溝渠4〇4底部的曰曰非 晶矽層並未完全熔融，故液態的矽會從第一溝渠4〇4底邙 開始往外成長。由於熔融的液態矽是由第一溝渠4〇4往^卜 橫向成長，故在相鄰的第一溝渠4〇4之間會存在有晶體邊 界5 00，而這些晶粒邊界5〇〇將直接受限於第一溝渠4〇4彼 此之間的距離。由於第一溝渠4〇4係彼此平行排列，例如 沿著y方向排列，其晶粒成長僅在χ方向上受到相鄰第一 渠404之限制。換言之，藉由第一溝渠4〇4提供多條線性之 結晶核將可同時兼顧多晶矽層的晶粒尺寸以及均勻性。 以下針對整個多晶矽層的製作進行詳細的說明。第Μ 圖至第6 D圖繪示為依照本發明一較佳實施例多晶矽層的製 作流程示意圖。首先請參照第6Α圖，提供一基材6〇〇S，'此^ 基材600通常為玻璃基板。接著於基材6〇〇上形成一緩衝層 602，此緩衝層6〇2例如為一包含有氮化矽層6〇2a以及氧/匕 石夕層602b之積層結構。上述之氮化矽層6〇2a以及氧化碎層 602b例如係以電漿化學氣相沈積（Plasma Enhanced 曰
Chemical Vapor Deposition ，PECVD)的方式形成。 接著請參照第6B圖，於上述之緩衝層6〇2中形成多個 彼此平行排列的第一溝渠604，這些第一溝渠604例如係r 微影/蝕刻的方式形成，其形成的位置例如是在上層之 化矽層602b中。 氧 接著請同時參照第6C圖與第6D圖，在第一溝渠6〇4带
569350
成之後，接著形成一非晶矽層6 〇 6於緩衝層6 〇 2上，非晶石夕 層606例如係以低壓化學氣相沈積（L〇w pressure
Chemical Vapor Deposition，LPCVD)的方式形成。而在 形成非晶矽層60 6之後，接著進行一雷射熱退火製程，此 雷射熱退火製程例如是一準分子雷射熱退火製程。雷射熱 ，火製程中’控制準分子雷射照射於非晶矽層6 〇 6上的能 里，使付第一溝渠604以外的區域上的非晶石夕層606近乎完 全熔融，而第一溝渠604底部的非晶矽層606並未完全被= 融，因此液態的矽可從第一溝渠604底部開始結晶為一多 晶矽層608。此外，藉由雷射熱退火製程所形成的多晶矽 層608會存在有晶粒邊界610，此晶粒邊界61〇僅會出現在 相鄰的第一溝渠604之間。 第7 A圖至第7 D圖繪示為依照本發明另一較佳實施例多 晶矽層的製作流程示意圖。首先請參照第7A圖，提供一基 材700，此基材7〇〇通常為玻璃基板。接著於基材7〇〇上形& 成一氮化碎層702a，此氮化矽層70 2a例如係以電漿化學/氣 相沈積（PECVD)的方式形成。接著於上述之氮化矽層7〇2& 中形成多個彼此平行排列的第二溝渠7〇4a，這些第二溝渠 704a例如係以微影/蝕刻的方式形成。 ” 接著請參照第7B圖，在第二溝渠704a形成之後，接著 形成一共形之氧化矽層702b於氮化矽層7〇2&上，此氮化石夕 層702a與氧化矽層702b係構成一緩衝層7〇2。由於氧化石夕 層702b係覆蓋於氮化矽層7028上，故氧化矽層6〇2b第二溝 渠704a的位置上會自然形成多個第一溝渠7〇4b。此外丁這
569350 五、發明說明（8) 二第一溝渠7〇4b的寬度因階梯覆蓋（step coverage)的緣 =會比第二溝渠704a的寬度小，因此本實施例可以製作出 7見度小於臨界尺寸（Crhicai Dimension，CD)之第一溝渠 接著請同時參照:第7C圖與第7D圖，在第一溝渠7〇4形 成之後，接著形成一非晶矽層706於緩衝層702上，非晶石夕 =7〇6例如係以低壓化學氣相沈積（LpcVD)的方式形成阳而 形成非晶矽層706之後，接著進行一雷射熱退火製程， 雷射熱退火製程例如是一準分子雷射熱退火製程。雷射 二f火製程中，控制準分子雷射照射於非晶矽層7〇6上的 里使得第溝渠7 〇 4 b以外的區域上的非晶石夕層7 〇 6近 =完全熔融，而第一溝渠7041)底部的非晶矽層7〇6並未完 融’因此液態的石夕可從第一溝渠7〇4b底部開始結晶 ，一夕晶石夕層708。此外’藉由雷射熱退火製程所形成的 夕晶石夕層7G8會存在有晶粒邊界m，此晶粒邊界 出現在相鄰的第一溝渠7〇4b之間。 f 列優=所述，本發明之多晶石夕層的製作方法至少具有下 曰曰 J.由广1渠中未完全熔融之非晶矽層提供了良好的結 曰曰 j八五构勻性良好的優點。 術進=可輕易地以現有的微影/製程技術或是其他技 3 ·由於溝渠中未完* +、泣％ + 4 疋王広4之非晶矽層提供了良好的成 9787twf.ptd 第12頁 569350 五、發明說明（9) 核位詈，M ve π 使仔雷射熱退火製程的製程裕度很大。 的多曰提供了連續的成核位£，使得所成長出來 夕日日石夕層具有較少的晶體邊界。 术 雖然本發明已以一較佳實施例揭露如上 以限定本發明，任何熟習此技藝者， ”、、/、並非用 神和範圍A，當可作各種之更動與潤飾，發明之精 護範圍當視後附之申請專利範圍所界 =J本發明之保
KH 9787twf.ptd 第13頁 569350 圖式簡單說明 第1 A圖至第1 C圖繪示為習知多晶矽層的製作流程示意 圖； 第2圖繪示為習知藉由緩衝層上之開口進行多晶矽層 製作的示意圖； 第3圖繪示為習知多晶矽層的晶體邊界示意圖； 第4圖繪示為依照本發明一較佳實施例藉由緩衝層上 之溝渠進行多晶矽層製作的示意圖； 第5圖繪示為依照本發明一較佳實施例多晶矽層的晶 體邊界示意圖； 第6A圖至第6D圖繪示為依照本發明一較佳實施例多晶 矽層的製作流程示意圖；以及 第7A圖至第7D圖繪示為依照本發明另一較佳實施例多 晶矽層的製作流程示意圖。
9787twf.ptd 第14頁

Claims (1)

  1. 569350 六、申請專利範圍 1. 一種多晶矽層的製作方法，包括·· 提供一基材； 於該基材上形成一^具有複數個第一溝渠之緩衝層； 於該緩衝層上形成一非晶矽層；以及 進行一雷射退冬製程，使得該非晶矽層炫融後由該此 第一溝渠上方開始結晶，以形成一多晶矽層。 2 ·如申請專利範圍第1項所述之多晶石夕層的製作方 法，其中具有該些溝渠的缓衝層之形成方法包括： 於該基材上形成一氮化矽層； 於該氮化矽層中形成複數個第二溝渠；以及 於該氮化矽層上形成一共形之氧化矽層，以於該氧化 矽層中自然形成該些第一溝渠。 3 ·如申請專利範圍第2項所述之多晶石夕層的製作方 法，其中該些第二溝渠係以微影/鍅刻的方式形成。 4 ·如申請專利範圍第1項所述之多晶矽層的製作方 法，其中具有該些溝渠的緩衝層之形成方法包括： 於該基材上形成一氮化矽層； 於該氮化矽層上形成一氧化矽層；以及 於該氧化矽層中形成該些第一溝渠。 5 ·如申請專利範圍第4項所述之多晶矽層的製作方 法，其中該些第一溝渠係以微影/蝕刻的方式形成。 6 ·如申請專利範圍第1項所述之多晶矽層的製作方 法，其中該雷射退火製程係為一準分子雷射退火製裎。
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