TW535210B - Phase shift mask and its manufacturing method - Google Patents

Phase shift mask and its manufacturing method Download PDF

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Publication number
TW535210B
TW535210B TW090102774A TW90102774A TW535210B TW 535210 B TW535210 B TW 535210B TW 090102774 A TW090102774 A TW 090102774A TW 90102774 A TW90102774 A TW 90102774A TW 535210 B TW535210 B TW 535210B
Authority
TW
Taiwan
Prior art keywords
film
phase shift
mask
light
photoresist
Prior art date
Application number
TW090102774A
Other languages
English (en)
Chinese (zh)
Inventor
Toshihiko Tanaka
Norio Hasegawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW535210B publication Critical patent/TW535210B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW090102774A 2000-09-21 2001-02-08 Phase shift mask and its manufacturing method TW535210B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000287510A JP3715189B2 (ja) 2000-09-21 2000-09-21 位相シフトマスク

Publications (1)

Publication Number Publication Date
TW535210B true TW535210B (en) 2003-06-01

Family

ID=18771241

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090102774A TW535210B (en) 2000-09-21 2001-02-08 Phase shift mask and its manufacturing method

Country Status (4)

Country Link
US (2) US6558855B2 (enExample)
JP (1) JP3715189B2 (enExample)
KR (1) KR100706731B1 (enExample)
TW (1) TW535210B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
KR100877708B1 (ko) * 2001-03-29 2009-01-07 다이니폰 인사츠 가부시키가이샤 패턴 형성체의 제조 방법 및 그것에 사용하는 포토마스크
JP4053263B2 (ja) * 2001-08-17 2008-02-27 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003110082A (ja) * 2001-09-28 2003-04-11 Mitsubishi Electric Corp リードフレーム、半導体装置および半導体チップの載置位置確認方法
US7056623B2 (en) * 2002-01-24 2006-06-06 Toppan Photomasks, Inc. Photomask and method for manufacturing the same
GB0215243D0 (en) * 2002-07-02 2002-08-14 Koninkl Philips Electronics Nv Mask and manufacturing method using mask
US7205074B2 (en) * 2002-12-31 2007-04-17 Intel Corporation Venting of pellicle cavity for a mask
JP2005134666A (ja) * 2003-10-30 2005-05-26 Hoya Corp フォトマスク及び映像デバイスの製造方法
US7459095B2 (en) * 2004-10-21 2008-12-02 Corning Incorporated Opaque chrome coating suitable for etching
JP4450743B2 (ja) * 2005-02-08 2010-04-14 富士通マイクロエレクトロニクス株式会社 フォトマスク、フォトマスクの製造方法及び半導体装置の製造方法
JP4587837B2 (ja) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク
JP4843304B2 (ja) * 2005-12-14 2011-12-21 富士通セミコンダクター株式会社 フォトマスクの製造方法、デバイスの製造方法、及び、フォトマスクのモニタ方法
JP4936515B2 (ja) * 2006-05-18 2012-05-23 Ｈｏｙａ株式会社 フォトマスクの製造方法、およびハーフトーン型位相シフトマスクの製造方法
KR20100101916A (ko) * 2009-03-10 2010-09-20 주식회사 하이닉스반도체 형광층을 이용한 위상반전마스크 제조방법
KR102077337B1 (ko) * 2015-04-17 2020-02-13 에스케이하이닉스 주식회사 프리-얼라인먼트 키를 갖는 포토마스크 및 이를 포함하는 포토리소그라피 장비

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132908A (en) * 1990-10-26 2000-10-17 Nikon Corporation Photo mask and exposure method using the same
JPH05181257A (ja) 1992-01-06 1993-07-23 Sharp Corp 光露光用マスク
JP2864915B2 (ja) 1992-12-07 1999-03-08 株式会社日立製作所 半導体装置の製造方法
US5413884A (en) * 1992-12-14 1995-05-09 American Telephone And Telegraph Company Grating fabrication using electron beam lithography
JPH08152716A (ja) * 1994-11-28 1996-06-11 Mitsubishi Electric Corp ネガ型レジスト及びレジストパターンの形成方法
US5987160A (en) * 1997-04-02 1999-11-16 Delco Electronics Corporation Method and apparatus for inspecting a photoresist material by inducing and detecting fluorescence of the photoresist material

Also Published As

Publication number Publication date
US6558855B2 (en) 2003-05-06
KR100706731B1 (ko) 2007-04-13
US20020053748A1 (en) 2002-05-09
US20020034694A1 (en) 2002-03-21
KR20020023091A (ko) 2002-03-28
US6576379B2 (en) 2003-06-10
JP2002099071A (ja) 2002-04-05
JP3715189B2 (ja) 2005-11-09

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees