527697 2778twf.doc/006 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（/ ) 本發明是有關於一種製造鋁連線（Aluminum Interconnection)之方法，且特別是有關於一種利用選擇性 銘的化學氣相沉積（Selective Chemical Vapor Deposition A1 ; Selective CVD Al)結合物理氣相沉積鈦與鋁(Physical Vapor Deposition Τι and A1 ; PVD Ti & PVD Al)以製造鋁連線之方 法。 金屬鋁現今已成爲半導體廠普遍用來作爲元件的主要 導電材料，其主要因素爲金屬鋁本身的電阻率(Resistivity) 頗低，且對介電層的附著能力良好，可降低RC延遲時間， 並提升元件的開關（Switching)頻率，因此在現今元件積集 度日益提高的狀況下，以金屬鋁作爲積體電路製程中內連 線的材質，相當符合對RC延遲時間的要求。然而，以濺 鍍物理氣相沉積法(Sputtering PVD)所沉積的鋁卻有實際上 的困難。由於元件的積集度增加，使得介層窗開口（Via Hole) 的高寬比提高，而以濺鍍法所沉積的金屬鋁的階梯覆蓋 (Step Coverage)能力較差，易在介層窗開口中形成孔洞 (Voids) 〇 假若以金屬鎢作爲連線之材質，則由於金屬鎢可由化 學氣相沉積法形成，具有較佳的階梯覆蓋能力，再加上本 身極易形成具較高揮發性的氟化物，沒有蝕刻上困難，使 金屬鎢也成爲主要且常用的金屬材料。但是一般以金屬鎢 作爲介層窗之連線材質，係以化學氣相沉積法將金屬鎢毯 覆於介層窗開口中，再經由回蝕(Etch Back)或鎢-化學機械 硏磨（W-CMP)過程以形成塡滿於介層窗開口中的鎢介層 3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） --------裝------，訂------ -W (請先閱讀背面之注意事項再填寫本頁) 527697 2778twf.doc/006 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（厶） 窗。然而金屬鎢的電阻率較鋁高上數倍，且回蝕或鎢-化 學機械硏磨仍會產生某些缺失，如過度蝕刻等，造成製造 成本的增加。 第1A圖至第1F圖是習知以兩段式冷熱濺鍍法製作鋁 介層窗之製造剖面示意圖。請參照第1A圖，首先，在一 基底100上形成一第一金屬層102,再以化學氣相沉積法 沉積一層金屬介電層104，並將之表面平坦化，用來作爲 上下金屬層隔離之用，這層金屬介電層104厚度約爲Ιμιη。 接著，如第1Β圖所示，塗佈一層光阻劑(未繪示於圖中）於 金屬介電層104上，並以微影製程，形成一光阻圖案106， 用以定義接觸窗開口位置，以連接上下金屬層。 請參考第1C圖，以非等向性乾式鈾刻(Anisotropic Dry Etch)將未被光阻圖案106保護的金屬介電層Γ04蝕刻，直 到露出第一金屬層102爲止，形成一介層窗開口 108。在 完成形成介層窗開口 108，並剝除光阻圖案106之後，如 第1D圖所示，沉積一層濕潤層(Wetting Layer)112，這層 濕潤層112的材質，主要是選用同樣以DC濺鎪法所沉積 的金屬鈦，厚度約在200A到1000A之間，其目的在於使 鋁在進行熱流時，有較佳的表面遷移的能力，以提升其階 梯覆蓋的效果。 請參考第1E圖，接下來，以DC濺鍍法沉積鋁，進行 低溫濺鍍，形成一薄的金屬鋁層114a，此溫度約在室溫至 200°C，此時沉積的金屬鋁層114a由於較薄，可避免發生 突懸現象(Overhang)。接著，以大約400°C到550°C的高溫 --------裝------訂------ (請先閱t背面之β注意事項再填寫本貢) 4527697 27 78twf.doc/006 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（3) 下，進行第二階段的鋁濺鍍，以便將較厚的金屬鋁114b 塡入介層窗開口 108中，並增加金屬鋁114b的厚度到我 們所需要的目標，而形成金屬鋁層114，如第1F圖所示。 一般而言，此金屬鋁層114的厚度約在4000A至10000A 之間。 由於兩段式冷熱濺鍍法製作鋁介層窗製程技術並不需 要回蝕，而且執行高溫鋁的濺鍍較其他以DC濺鍍法有更 佳的階梯覆蓋能力。然而，仍有以下之缺點： (1) .習知所形成的鋁連線由於具有較低的反射率 (Reflectivity)，因此對於後續微影製程會因光的反射過低， 造成所形成的光阻圖案有所偏差，而無法準確的對準，產 生對不準現象(Misalignment)。 (2) .以習知製作鋁連線的製程技術需花費過多且較爲 複雜的步驟，尤其是對於沉積前的擴散阻障層與濕潤層的 製作，以及高溫控制方面，仍較不易掌握，使得高溫鋁的 溝塡(Gap Fill)能力及製程的穩定性仍有待改進。 因此本發明的主要目的就是在提供一種利用鋁的選擇 性化學氣相沉積，結合鈦與鋁的物理氣相沉積以製造鋁連 線之方法。在一基底上形成金屬介電層，並定義出介層窗 開口後，利用預洗(Pre-Clean)方式將殘留在介層窗開口底 部的金屬鋁表面上之氧化物移除。接著，在約2至5托耳 (Ton*)的壓力，與晶片溫度爲200°C至220°C下，以DMAH(其 化學式爲：（CH3)2A1H)作爲液態材質，進行選擇性化學氣 相沉積法，以形成鋁插塞(A1 Plug)，並將介層窗塡滿。倘 5 (請先閱讀背面之注意事 蟀 項再填. 裝-- :寫本頁) -訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 527697 ♦ 2778twf.doc/006 A 7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（冬） 若後續沉積連線金屬需破真空時’則隨後需再以物理氣相 沉積法沉積一層薄的金屬鈦層’以避免鋁氧化，而造成介 層窗的阻値過高。接著，再以物理氣相沉積法沉積連線金 屬鋁層，而鈦層可作爲後續鈾刻連線金屬鋁層時的蝕刻終 止層，以避免光阻圖案因微影造成的對不準現象，而對金 屬鋁介層窗造成損害。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例’並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1A圖至第1F圖是習知以兩階段冷熱濺鍍法製作鋁 連線之剖面示意圖。 第2A圖至第2F圖是依據本發明所提出的製作鋁連線 之剖面示意圖。 圖式之標記說明： 100、200 :基底 102、202 :第一金屬層 104、204 :金屬介電層 106、206 :光阻圖案 108、208 :介層窗開口 114、114a、114b :金屬鋁層 112 :濕潤層 210 :殘留之氧化物 212 :選擇性金屬鋁層 6 本紙張尺度適财關家標準（〇叫八视^(21(^297公釐) 一 "~ (請先閲讀背面之注意事 項再填* 裝-- :寫本頁) 訂 527697 277Stwf.doc/006 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（f) 213 :鋁介層窗 214 ·金屬欽層 216 :連線金屬鋁層 實施例 請參照第2A圖至第2F圖，其繪示依照本發明一較佳 實施例的一種製作鋁連線的剖面示意圖。首先，如第2A 圖所示，在一基底200上形成一第一金屬層202，接著在 基底200上以化學氣相沉積法形成一層金屬介電層204, 由於基底表面因第一金屬層202之故，而使金屬介電層204 表面隨之起伏而不平坦，因此將金屬介電層204的表面以 化學機械硏磨法(CMP)或旋塗法(SOG)來平坦化，以用來作 爲上下金屬層隔離之用，而這層金屬介電層204厚度約爲 Ιμιη。接著，如第2B圖所示，塗佈一層光阻劑(未繪示於 圖中）於金屬介電層204上，並以微影製程，形成一光阻圖 案206，用以定義接觸窗開口位置，以連接上下金屬層。 接著請參考第2C圖，以非等向性乾式蝕刻將未被光 阻圖案206保護的金屬介電層204蝕刻，直到露出第一金 屬層202表面爲止，形成一介層窗開口 208，並有少部分 氧化物210殘留在介層窗開口 208底部的第一金屬層202 表面。在完成介層窗開口 208，並剝除光阻圖案206之後， 在400 C下蒸發氣體(Degas)，並持I買進彳了約10分鐘。隨後， 如第2D圖所示，進行預洗步驟，以功率爲2〇〇瓦特的三 氯化硼（BC13)作爲電漿，對位在介層窗開口底部的第一金 屬層202表面進行淸洗，以去除殘留在第一金屬層202表 7 本紙張尺度適用中國國家標準（CNS ) A视^ ( 21〇χ297公楚） -------裝------訂----- (請先閲讀背面之注意事項再填寫本頁) 527697 經濟部中央標準局員工消費合作社印製 2778twf.doc/006 A7 B7 -- --- — 五、發明説明（厶） 面的氧化物210。 接下來，如第2E圖所示，進行選擇性化學氣相沉_ 法沉積金屬鋁之步驟。以DMAH或諸如此類的液態材半斗， 在壓力爲2至5托耳，晶片溫度爲200°C至220°C下，進行 選擇性化學氣相沉積法沉積金屬鋁層212於介層窗開p 2()8 中，形成鋁介層窗213，並持續約58至100秒，隨後再以 物理氣相沉積法在金屬介電層204與鋁介層窗213上沉_ 金屬鈦層214，此金屬鈦層214厚度約爲300A至1000A。 請參照第2F圖，在金屬鈦層214上以物理氣相沉積 法沉積一層厚度約4000A至8000A的連線金屬鋁層216， 並隨後以微影與蝕刻製程來完成鋁連線的製作（未繪示於 圖中）。 由上述本發明較佳實施例可知，應用本發明具有下Μ 優點： (1) ·在本發明所提出的製作鋁連線製程技術中，以物J 理氣相沉積法所形成的金屬鈦層具有保護塡補於介層窗中 的金屬銘層之作用’以避免在連線金屬銘上進行微影與倉虫 刻製程時，因爲微影的對不準現象造成光阻圖案偏移，而 侵鈾了介層窗內的金屬錦。 (2) .依據本發明提出的鋁連線製程技術所形成的鋁介 層窗，由於在第一金屬鋁層與鋁介層窗之間並無阻障層的 存在，因此其電阻係數較習知以兩段式冷熱濺鍍法所形成 的鋁介層窗更低。 雖然本發明已以一較佳實施例揭露如上，然其並非用 8 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297&ϋ ~ ^' c請先閲讀背面之注意事項再填寫本頁〕 .裝- -訂 .鳘 527697 2 77 8twf.doc/006 A 7 B7 五、發明説明（7) ' 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印1i 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）527697 2778twf.doc / 006 A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (/) The present invention relates to a method for manufacturing Aluminum Interconnection, and in particular to a utilization option Xingming's chemical vapor deposition (Selective Chemical Vapor Deposition A1; Selective CVD Al) combines physical vapor deposition of titanium and aluminum (Physical Vapor Deposition Ti and A1; PVD Ti & PVD Al) to produce aluminum wiring. Aluminum metal has now become the main conductive material commonly used by semiconductor factories as components. The main factors are the low resistivity of aluminum metal and its good adhesion to the dielectric layer, which can reduce the RC delay time. Increasing the switching frequency of components, so under the current situation of increasing component accumulation, using aluminum metal as the material of interconnects in the integrated circuit manufacturing process is quite in line with the requirements of RC delay time. However, aluminum deposited by sputtering physical vapor deposition (Sputtering PVD) has practical difficulties. As the accumulation of components increases, the aspect ratio of the Via window is improved, and the metal aluminum deposited by the sputtering method has a poor step coverage capability, and is easy to be in the via window. Voids formation 〇 If metal tungsten is used as the material of the connection, metal tungsten can be formed by chemical vapor deposition, which has better step coverage, and it is easy to form fluorine with higher volatility. Without any difficulty in etching, making metallic tungsten also the main and commonly used metal material. But generally, metal tungsten is used as the connection material of the interlayer window. The metal tungsten blanket is covered in the opening of the interlayer window by chemical vapor deposition, and then is etched back (Etch Back) or tungsten-chemical mechanical honing (W -CMP) process to form a tungsten interlayer filled in the opening of the interlayer window 3 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -------- install ----- -， Order ------ -W (Please read the notes on the back before filling out this page) 527697 2778twf.doc / 006 A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. Description of Invention (厶) Window . However, the electrical resistivity of metal tungsten is several times higher than that of aluminum, and etchback or tungsten-chemical mechanical honing will still cause some defects, such as over-etching, which will increase the manufacturing cost. Figures 1A to 1F are schematic cross-sectional views showing the fabrication of an aluminum interlayer window by a conventional two-stage cold and hot sputtering method. Referring to FIG. 1A, first, a first metal layer 102 is formed on a substrate 100, and then a metal dielectric layer 104 is deposited by a chemical vapor deposition method, and the surface is planarized to be used as an upper and lower metal layer isolation. For this purpose, the thickness of the metal dielectric layer 104 is about 1 μm. Next, as shown in FIG. 1B, a layer of photoresist (not shown) is coated on the metal dielectric layer 104, and a photoresist pattern 106 is formed by a lithography process to define a contact window opening. Position to connect the upper and lower metal layers. Referring to FIG. 1C, the metal dielectric layer Γ04 that is not protected by the photoresist pattern 106 is etched with anisotropic dry etch (Anisotropic Dry Etch) until the first metal layer 102 is exposed to form a dielectric window opening 108. . After the formation of the interlayer window opening 108 and the stripping of the photoresist pattern 106, as shown in FIG. 1D, a wetting layer 112 is deposited. The material of this wetting layer 112 is mainly selected from DC sputtering. The thickness of titanium metal deposited by the hafnium method is between 200A and 1000A. The purpose is to make aluminum have a better surface migration ability when performing heat flow, so as to improve the effect of step coverage. Please refer to FIG. 1E. Next, aluminum is deposited by DC sputtering, and low temperature sputtering is performed to form a thin metal aluminum layer 114a. The temperature is about room temperature to 200 ° C. At this time, the deposited aluminum metal layer 114a Due to its thinness, overhang can be avoided. Then, at a high temperature of about 400 ° C to 550 ° C -------- install ------ order ------ (please read the β precautions on the back of t before filling in this tribute) 4527697 27 78twf.doc / 006 A7 B7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (3), the second stage of aluminum sputtering is carried out in order to pour the thicker aluminum 114b into the interlayer window In the opening 108, the thickness of the metal aluminum 114b is increased to our desired target, and the metal aluminum layer 114 is formed, as shown in FIG. 1F. Generally, the thickness of the metal aluminum layer 114 is between 4000A and 10000A. Due to the two-stage cold and hot sputtering process, the aluminum interlayer window manufacturing process does not require etch back, and the sputtering of high-temperature aluminum has better step coverage than other DC sputtering processes. However, there are still the following disadvantages: (1). Due to the low reflectivity of the aluminum connection formed by conventional methods, the reflection of light in the subsequent lithography process will be too low, resulting in the formation of light. The resistance pattern is deviated, and accurate alignment cannot be performed, resulting in misalignment. (2). The conventional process technology for making aluminum wiring requires too many and complicated steps, especially for the production of diffusion barrier layer and wet layer before deposition, and high temperature control, which is still difficult to grasp. As a result, the high-temperature aluminum Gap Fill capability and process stability need to be improved. Therefore, the main object of the present invention is to provide a method for manufacturing aluminum wires by using selective chemical vapor deposition of aluminum and combining physical vapor deposition of titanium and aluminum. After a metal dielectric layer is formed on a substrate and the opening of the interlayer window is defined, the oxide remaining on the surface of the metal aluminum surface at the bottom of the interlayer window opening is removed by a pre-clean method. Next, under a pressure of about 2 to 5 Torr (Ton *) and a wafer temperature of 200 ° C to 220 ° C, DMAH (its chemical formula: (CH3) 2A1H) is used as a liquid material to perform selective chemical gas. Phase deposition method to form an Al plug and fill the via window. If 5 (Please read the notes on the back before filling in. Packing-: write this page)-The size of the paper used for this edition applies to the Chinese National Standard (CNS) A4 (210X297 mm) 527697 ♦ 2778twf.doc / 006 A 7 B7 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (winter) If the subsequent deposition of the connection metal needs to break the vacuum 'then a thin layer of titanium metal should be deposited by physical vapor deposition' to avoid Aluminum oxidizes, causing the resistance of the interlayer window to be too high. Next, a physical metal deposition layer is used to deposit the metal aluminum layer, and the titanium layer can be used as an etching stop layer for subsequent uranium etching of the metal aluminum layer to avoid the misalignment caused by the photoresist pattern. The damage to the metal aluminum interlayer window. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a detailed description is given below with reference to the accompanying drawings, as follows: Brief description of the drawings: FIG. 1A Fig. 1 to Fig. 1F are cross-sectional schematic diagrams of conventionally manufacturing aluminum wires by a two-stage hot and cold sputtering method. FIG. 2A to FIG. 2F are schematic cross-sectional views of making an aluminum connection according to the present invention. Description of the drawing symbols: 100, 200: substrates 102, 202: first metal layers 104, 204: metal dielectric layers 106, 206: photoresist patterns 108, 208: interlayer window openings 114, 114a, 114b: metal aluminum Layer 112: Wet layer 210: Residual oxide 212: Selective metal aluminum layer 6 This paper is suitable for financial standards (〇 called eight vision ^ (21 (^ 297 mm)) " ~ (Please read the back first Note for refilling * Installation-: Write this page) Order 527697 277Stwf.doc / 006 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (f) 213: Aluminum interlayer window 214 Layer 216: Refer to FIG. 2A to FIG. 2F for an embodiment of a connection metal aluminum layer, which shows a schematic cross-sectional view of an aluminum connection according to a preferred embodiment of the present invention. First, as shown in FIG. 2A, A first metal layer 202 is formed on a substrate 200, and then a metal dielectric layer 204 is formed on the substrate 200 by a chemical vapor deposition method. Since the surface of the substrate is caused by the first metal layer 202, the metal dielectric layer is formed. The surface of the 204 is undulated and uneven, so the surface of the metal dielectric layer 204 is chemical mechanical The honing method (CMP) or spin coating method (SOG) is used for planarization to isolate the upper and lower metal layers, and the thickness of the metal dielectric layer 204 is about 1 μm. Then, as shown in FIG. 2B, A layer of photoresist (not shown in the figure) is coated on the metal dielectric layer 204, and a photoresist pattern 206 is formed by a lithography process to define the opening position of the contact window to connect the upper and lower metal layers. Referring to FIG. 2C, the metal dielectric layer 204 that is not protected by the photoresist pattern 206 is etched by anisotropic dry etching until the surface of the first metal layer 202 is exposed, and a dielectric window opening 208 is formed, with a small part The oxide 210 remains on the surface of the first metal layer 202 at the bottom of the interlayer window opening 208. After the interlayer window opening 208 is completed and the photoresist pattern 206 is stripped, the gas (Degas) is evaporated at 400 C, and I buy It took about 10 minutes. Then, as shown in Figure 2D, a pre-washing step was performed, and boron trichloride (BC13) with a power of 2000 watts was used as the plasma, which was positioned at the bottom of the dielectric window opening. Rinse the surface of a metal layer 202 to remove the residue on the first metal layer 202 This paper size applies to Chinese National Standard (CNS) A Vision ^ (21〇χ297 公 楚) ------- install -------- order ----- (Please read the precautions on the back before filling (This page) 527697 Printed by 2778twf.doc / 006 A7 B7, the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ------V. The oxide 210 on the surface of the invention (ii). Next, as shown in FIG. 2E, a step of depositing metallic aluminum by a selective chemical vapor deposition method is performed. Use DMAH or similar liquid material half bucket to perform selective chemical vapor deposition to deposit a metal aluminum layer 212 on the interlayer window at a pressure of 2 to 5 Torr and a wafer temperature of 200 ° C to 220 ° C. In 2 () 8, an aluminum interlayer window 213 is formed and lasts for about 58 to 100 seconds. Then, a physical vapor deposition method is used to sink the metal dielectric layer 204 and the aluminum interlayer window 213_the metal titanium layer 214. The thickness of the titanium metal layer 214 is about 300A to 1000A. Referring to FIG. 2F, a metal metal layer 216 having a thickness of about 4000 A to 8000 A is deposited on the metal titanium layer 214 by physical vapor deposition, and then the aluminum wiring is manufactured by lithography and etching processes (not shown). (Shown in the figure). It can be known from the above-mentioned preferred embodiments of the present invention that the application of the present invention has the following advantages: (1) · In the aluminum connection process technology proposed by the present invention, the metal titanium layer formed by physical vapor deposition method has Protects the role of the metal inscription layer in the interlayer window to prevent the photoresist pattern from shifting due to the misalignment of the lithography during the photolithography and the worm process on the metal inscription of the connection. The metal brocade in the interlayer window. (2). The aluminum interlayer window formed according to the aluminum connection process technology proposed in the present invention has a resistivity because the barrier layer does not exist between the first metal aluminum layer and the aluminum interlayer window. The aluminum interlayer window formed by the two-stage cold and hot sputtering method is lower. Although the present invention has been disclosed as above with a preferred embodiment, it does not use 8 paper sizes to apply Chinese National Standard (CNS) A4 specifications (210 × 297 & ϋ ~ ^ 'c, please read the precautions on the back before filling this page) .Installation--Order. 鳘 527697 2 77 8twf.doc / 006 A 7 B7 V. Description of the Invention (7) 'To limit the present invention, anyone skilled in the art may depart from the spirit and scope of the present invention. Various modifications and retouchings are made, so the protection scope of the present invention shall be determined by the scope of the attached patent application. (Please read the precautions on the back before filling this page.) Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed 1i This paper size applies to China National Standard (CNS) A4 (210X297 mm)