522480 A7 ______ B7_ 五、發明說明（f ) 【技術領域】 本發明係關於以液晶顯示器爲核心之顯示元件等所使 用之透明電極膜及用以形成該透明電極膜之濺鍍靶子。 【背景技術】 ITO (以銦-錫作爲主成分之複合氧化物：In2〇3_Sn〇2 )膜’係廣泛地被使用作爲以液晶顯示器爲核心之顯示元 件等之透明電極（膜）。 作爲形成該ITO膜之方法，係藉由真空蒸鍍法或濺鍍 法等、一般所謂物理蒸鍍法之手段而進行，特別是如果由 操作性或薄膜之安定性來看的話，最好是使用磁控濺鍍法 來形成該ITO膜。 藉由濺鍍法之所進行之薄膜之形成，係使得Ar (氬） 離子等之正離子，呈物理性地撞擊設置在陰極上之靶子， 藉由該撞擊能量，而釋出構成該靶子之材料，在對面之陽 極部位之基板上，來積層與子材料大致相同組成之薄膜 〇 藉由濺鍍法之所進行之被覆法，係具有以下之特徵： 可以藉由調整其處理時間或供應電力等，而以安定之成膜 速度，形成自埃（A)單位之薄膜至數十//m之厚膜爲止 〇 但是，現在使用最多之ITO系透明電極膜，係具有良 好之可見光之透過率和導電性，但是’主要有以下之問題 點發生。 _3 —---- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) I --------訂---------線 1 · r·I — II-----— — — — — — — — — — — I . 522480 A7 ------- —__B7 _____ 五、發明說明（>) 其中第1個之問題點，係膜質不均勻，並且，電路形 成時之蝕刻特性差。近年來，在顯示器裝置或顯示輸入用 裝置上’要求增加畫素密度而成爲緻密之畫面，但是，隨 著前述之要求，也要求透明電極圖案之緻密化。例如在液 晶顯示器裝置，也有形成於配線幅寬20〜50//m此種細線 之部分’而要求高度之蝕刻加工性。 作爲改善像這樣之ITO透明電極膜之缺點者，係提議 IXO (In2〇3_ZnO)膜。但是，該 IXO (Ιη203-Ζη0)膜，比 起ΠΌ膜，雖蝕刻性顯著地變大，但是，有導電性差並且 對於酸或鹼等之耐藥劑性或耐水性等不夠充分之問題發生 。此外’提高之蝕刻性會造成不良影響，而有過度蝕刻之 傾向，未必可說是適當材料。 其第2個之問題點，係在ITO透明電極膜形成用靶子 存在富錫相。該富錫相係成爲後面會提到之球粒（nodule )之發生原因。也就是說，在藉由濺鍍形成ITO膜的情形 下’稱爲球粒之微細突起物，係發生在靶子表面之濺蝕部 ，由於該球粒會引起異常放電或飛濺（splash)，以致於 有濺鍍速率降低之問題發生。 此外，起因於該球粒之異常放電或飛濺，在濺鍍室內 會浮游粗大之粒子（微粒），該微粒係附著在所形成之薄 膜上，而成爲品質降低之原因。 由以上可知，在實際之製造時，必須定期地除去靶子 上所發生之球粒，像這樣係會導致生產效率降低之問題發 生，因此，球粒發生少之靶子一直是所希望得到者。 ___^4_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁)522480 A7 ______ B7_ V. Description of the Invention (f) [Technical Field] The present invention relates to a transparent electrode film used for a display element having a liquid crystal display as a core and a sputtering target for forming the transparent electrode film. [Background Art] An ITO (composite oxide containing indium-tin as a main component: In203_SnO2) film 'is widely used as a transparent electrode (film) such as a display element having a liquid crystal display as its core. As a method for forming the ITO film, a vacuum vapor deposition method, a sputtering method, or the like is generally used as a method called a physical vapor deposition method. In particular, from the viewpoint of operability and stability of a thin film, it is preferably This ITO film was formed using a magnetron sputtering method. The formation of the thin film by the sputtering method is such that positive ions such as Ar (argon) ions physically hit a target provided on the cathode, and the energy constituting the target is released by the impact energy. The material, on the opposite anode substrate, is used to laminate a thin film of approximately the same composition as the sub-material. The coating method by sputtering method has the following characteristics: It can adjust its processing time or supply power Etc. At a stable film formation speed, a thin film in the unit of Angstrom (A) is formed to a thickness of several tens of meters per meter. However, the most widely used ITO-based transparent electrode film has a good transmittance of visible light. And conductivity, but 'mainly the following problems occur. _3 —---- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) I -------- Order-- ------- Line 1 · r · I — II -----— — — — — — — — — — — I. 522480 A7 ------- —__ B7 _____ V. Description of the invention ( >) The first problem is that the quality of the film is uneven and the etching characteristics are poor when the circuit is formed. In recent years, it has been required to increase the pixel density in display devices or display input devices to achieve a dense screen. However, in accordance with the foregoing requirements, the density of transparent electrode patterns has also been required. For example, in a liquid crystal display device, it is required to have a high degree of etching processability because it is formed on a portion of a thin line such as a wiring width of 20 to 50 // m. To improve the shortcomings of such ITO transparent electrode films, IXO (In203_ZnO) films have been proposed. However, this IXO (Ιη203-Zη0) film has a significantly higher etchability than a ΠΌ film, but it has a problem of poor conductivity and insufficient resistance to acids, alkalis, and other chemical resistance and water resistance. In addition, the increased etchability causes adverse effects, and there is a tendency to overetch, which is not necessarily an appropriate material. The second problem is the existence of a tin-rich phase in the target for forming an ITO transparent electrode film. This tin-rich phase becomes the cause of the nodule mentioned later. In other words, in the case of forming an ITO film by sputtering, 'fine projections called spheres occur in the sputtering portion of the target surface, and the spheres cause abnormal discharge or splash, so that Problems occur with reduced sputtering rate. In addition, due to the abnormal discharge or splashing of the pellets, coarse particles (fine particles) float in the sputtering chamber, and the fine particles are attached to the formed film, which causes a reduction in quality. From the above, it is known that in actual manufacturing, the pellets generated on the target must be removed regularly. This causes a problem that the production efficiency is reduced. Therefore, a target with a small number of pellets has always been the desired one. ___ ^ 4_____ This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) (Please read the precautions on the back before filling this page)
522480 A7 ^___B7____ 五、發明說明（^ ) 就其第3個之問題點而言，由於存在前述問題，因此 ，作爲球粒之降低方法，係提議減少燒結體中之空孔，以 便於儘可能地提高燒結體之密度，而要求讓成形前之粉體 進一步成爲微粉。. 一般，使用氧化锆珠和具氧化鍩內壁之容器來進行微 粉碎，但是，會有來自此等粉碎用介質之污染（污染物） 、也就是氧化锆混入至靶子材料中之問題發生。 此外，另一方面，必須在加壓狀態下進行燒結，因此 ，爲了更加提高密度，結果，會有需要更大型化設備之問 題發生，並且，就工業上而言，也不能說是效率良好之方 法。 【發明之揭示】 本發明係爲了解決前述之各種問題點，而得到一種可 維持良好之可見光之透過率和高導電性、同時具有適度之 蝕刻性之透明電極膜。 此外，本發明之目的，係在形成該透明電極膜之濺鍍 製程中，能有效率地製造高密度且球粒發生少之燒結體靶 子，藉此以抑制球粒發生所伴隨之生產效率降低或品質降 低，並且，還得到能夠忽視來自粉碎用介質之污染（污染 物）。 本發明係提供： 1·一種透明電極膜，其特徵爲：在氧化銦中，含有氧 化銷0.1〜5重量％，並且，在該氧化姻中固彳谷有戰化錯， 以及， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ,·---- 訂 --------I I 1 522480 A7 B7 五、發明說明) 2.—種用以形成該透明電極膜之濺鍍靶子，其特徵爲 :在氧化銦中，含有氧化鉻0.1〜5重量％，並且，在該氧 化銦中固溶有氧化锆。 【圖式之簡單說明】 圖1係氧化錯含有量10重量％之XRD測定結果。圖 2係氧化鉻含有量5重量％之XRD測定結果。圖3係氧化 锆含有量1重量％之XRD測定結果。 【發明之實施形態】 透明導電膜之導電性一般以面積電阻（〇/□)來表 示，通常要求5Ω/□左右之面積電阻，在適用於前述之 液晶顯示器畫面的情形下，隨著液晶畫面之高精細化，係 要求更低之面積電阻。 面積電阻係以比電阻除以透明導電膜厚度之値來表示 。因此，透明導電膜之面積導電係數乃以導電係數（比電 阻之倒數）和膜厚之乘積來表現，該導電係數σ (Q-1· cnT1)係以包含於薄膜中之載體（電涧或電子）之所具有 之電何e (庫倫）、載體遷移率e ( cm2/v · sec )和載體 濃度 η ( cm 3 )間之乘積（σ ( Ω」· cm-i )=e*#,n) 而表示。 因此，爲了提高透明導電膜之導電係數及降低比電阻 和面積電阻，因此，只要增大載體遷移率〆（cm2/v · Μ。 )和載體濃度η ( cm 3 )之任何一方或雙方即可。 本纸張尺度適用中國國家標準（CNS)A4規格（210522480 A7 ^ ___ B7____ 5. Description of the Invention (^) As far as the third problem is concerned, because of the aforementioned problems, as a method of reducing pellets, it is proposed to reduce the voids in the sintered body so as to be as possible as possible In order to increase the density of the sintered body, it is required to further make the powder before forming into a fine powder. Generally, zirconia beads and a container with a hafnium oxide inner wall are used for micro-pulverization. However, contamination (contamination) from these pulverizing media, that is, the problem that zirconia is mixed into the target material occurs. On the other hand, sintering must be performed in a pressurized state. Therefore, in order to further increase the density, a problem that a larger equipment is required will occur. In addition, it cannot be said to be industrially efficient. method. [Disclosure of the Invention] The present invention is to obtain a transparent electrode film that can maintain a good transmittance of visible light and high conductivity, and at the same time has a moderate etching property in order to solve the aforementioned various problems. In addition, the object of the present invention is to efficiently produce a sintered body target having a high density and a small number of pellets during a sputtering process for forming the transparent electrode film, thereby suppressing the reduction in production efficiency accompanying the occurrence of pellets. Or the quality is reduced, and contamination (contaminants) from the pulverizing medium can be ignored. The present invention provides: 1. A transparent electrode film, characterized in that: indium oxide contains 0.1 to 5% by weight of oxidized pins; and in the oxidized marriage, there is a warfare fault in the solidified valley, and the paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page), ---- Order -------- II 1 522480 A7 B7 5 2. Description of the invention) 2. A sputtering target for forming the transparent electrode film, characterized in that indium oxide contains 0.1 to 5% by weight of chromium oxide, and zirconia is dissolved in the indium oxide. . [Brief description of the drawing] Fig. 1 shows the results of XRD measurement of the content of oxidized oxide of 10% by weight. Fig. 2 shows the results of XRD measurement of the chromium oxide content of 5% by weight. Fig. 3 shows the results of XRD measurement of a zirconia content of 1% by weight. [Embodiment of the invention] The conductivity of the transparent conductive film is generally expressed by area resistance (0 / □), and an area resistance of about 5Ω / □ is generally required. The higher definition requires lower area resistance. Area resistance is expressed as the specific resistance divided by the thickness of the transparent conductive film. Therefore, the area conductivity of the transparent conductive film is expressed by the product of the conductivity (the inverse of the specific resistance) and the thickness of the film. The conductivity σ (Q-1 · cnT1) is based on the carrier (electricity or Product of electron (e) (coulomb), carrier mobility e (cm2 / v · sec), and carrier concentration η (cm 3) (σ (Ω "· cm-i) = e * #, n) instead. Therefore, in order to increase the conductivity of the transparent conductive film and reduce the specific resistance and area resistance, it is only necessary to increase either or both of the carrier mobility 〆 (cm2 / v · M.) And the carrier concentration η (cm 3). . This paper size applies to China National Standard (CNS) A4 specifications (210
(請先閱讀背面之注意事項再填寫本頁) 纛 訂---------線！ 522480 A7 ___B7____ 五、發明說明（^) 有鑑於此，本發明人等係著眼於將用以提高載體濃度 之做爲摻雜物的氧化锆（Zr02)以高濃度（〜5重量％爲 止）固溶於氧化銦（In2〇3)中。 可以明確地得知：該氧化锆摻雜物，係正如後面所說 明般，能夠維持良好之可見光之透過率和高導電性。 呈興化銷（Zr〇2)之含有量超過5重重％之時’氧化 鍩並無法固溶在氧化銦中，以致於剩餘之氧化锆粒析出， 而導致透過率惡化。此外，當氧化锆（Zr02)之含有量未 滿〇·1重量％，無法產生作爲氧化锆摻雜物之功能，而不 能夠維持良好之可見光之透過率和高導電性。因此，必須 在氧化銦中，含有氧化锆0.1〜5重量％。 該氧化銷摻雜物之耐酸性並不像ΙΤΟ成分之311〇2那 麼高，也不像ΖηΟ那麼低，而具有可得到適度之蝕刻特性 之良好特點。 此外，作爲左右濺鍍時之膜特性之要因，係正如前面 所敘述的可舉出靶子之密度；靶子之密度愈高，則愈能夠 得到安定之濺鍍特性和良好之薄膜。 爲了提高靶子之密度，因此，成形前之粉體係愈細愈 好，但是，爲了粉碎前述之锆（氧化锆）摻雜物，可以使 用既有之粉碎用介質、也就是氧化锆珠或氧化锆襯塾之容 器，而進行粉碎，具有粉碎用介質本身不致成爲污染源（ 污染物來源）之大優點。 藉此’可提局粉碎程度’得到遠禹於習知技術之高純 度且高密度之濺鍍靶子。 f --- - 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) '' -------- (請先閱讀背面之注意事項再填寫本頁) 訂------------線！ -I I I I I 1 522480 A7 ___ B7_____ 五、發明說明（f ) 此外，可以藉由使用像這樣之高密度靶子，以抑制球 粒發生，抑制起因於該球粒之異常放電或飛濺所造成之微 粒之發生，有效地抑制導電膜之品質降低。 實施例及比較例 接著，就本發明之實施例，而進行說明。此外，本實 施例僅爲一個例子，本發明並不爲該例子所限。也就是說 ，在本發明之技術思想之範圍內，包含實施例以外之形態 或變形之全部。 (實施例） 、 在氧化銦（Ιη203 )粉中，混合一定量之氧化锆（Zr02 )粉，而使得氧化鉻（Zr02)粉成爲5重量％之後，接著 ，使用氧化锆（Zr02)球（珠），作爲粉碎用介質，而進 行微粉碎。爲了提高燒結密度，因此，實施粉碎至0.8//m 以下爲止。 使用該混合粉末，藉由It (噸）/cm2之壓力，而進 行衝壓成形，成爲0 200X 8 (mm)之成形體，並且，還進 行CIP (等向冷壓）。接著，在氧環境氣氛中、i640°C之 溫度，對於該成形體，進行4小時之燒結，而得到燒結體 (以下，稱爲「IZO燒結體」。）靶子。燒結密度係達到 98% 〇 藉由IZO燒結體靶子之xRD(x射線繞射），而確認 氧化錯之固溶。爲了進行對比，因此，除了實施例之氧化 銷含有量5重量％之例子，另以相同於前述實施例之條件 ’而製造氧化錯含有量1重量％和氧化锆含有量1〇重量％ _ ____2____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)(Please read the notes on the back before filling this page) 订 Order --------- line! 522480 A7 ___B7____ 5. Description of the invention (^) In view of this, the inventors focused on the use of zirconia (Zr02) as a dopant to increase the carrier concentration at a high concentration (up to 5% by weight). Soluble in indium oxide (In203). It is clear that the zirconia dopant can maintain good transmittance of visible light and high conductivity, as will be described later. When the content of the Chengxing pin (ZrO2) exceeds 5 wt%, the hafnium oxide cannot be solid-dissolved in indium oxide, so that the remaining zirconia particles are precipitated, resulting in deterioration of transmittance. In addition, when the content of zirconia (Zr02) is less than 0.1% by weight, it cannot function as a zirconia dopant, and it cannot maintain good transmittance of visible light and high conductivity. Therefore, the indium oxide must contain 0.1 to 5% by weight of zirconia. The oxidation resistance of the doped dopant is not as high as 31102 of the ITO composition, nor is it as low as Zn0, and it has the good characteristic that moderate etching characteristics can be obtained. In addition, as a factor of the film characteristics during left-right sputtering, as mentioned above, the density of the target can be cited; the higher the density of the target, the more stable the sputtering characteristics and the better the film. In order to increase the density of the target, the finer the powder system before forming, the better. However, in order to pulverize the zirconium (zirconia) dopant, the existing pulverization medium, that is, zirconia beads or zirconia can be used. The lining of the container for pulverization has the great advantage that the pulverization medium itself does not become a source of pollution (source of pollutants). In this way, the degree of local crushing can be improved to obtain Yuanyu's high-purity and high-density sputtering targets that are known in the art. f ----7 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) '' -------- (Please read the precautions on the back before filling this page) Order- -----------line! -IIIII 1 522480 A7 ___ B7_____ 5. Description of the invention (f) In addition, by using a high-density target like this, the occurrence of pellets can be suppressed, and the occurrence of particles caused by abnormal discharge or splashing of the pellets can be suppressed. , Effectively suppress the degradation of the quality of the conductive film. Examples and Comparative Examples Next, examples of the present invention will be described. In addition, this embodiment is only an example, and the present invention is not limited to this example. In other words, within the scope of the technical idea of the present invention, all forms and modifications other than the embodiments are included. Example: A certain amount of zirconia (Zr02) powder was mixed with indium oxide (Ιη203) powder so that the chromium oxide (Zr02) powder became 5% by weight, and then, zirconia (Zr02) balls (beads) were used. ), As a pulverizing medium, finely pulverized. In order to increase the sintered density, pulverization is performed until the sintering density is 0.8 // m or less. Using this mixed powder, press forming was performed at a pressure of It (ton) / cm2 to obtain a molded body of 0 200 × 8 (mm), and CIP (isotropic cold pressing) was also performed. Next, the formed body was sintered in an oxygen atmosphere at a temperature of i640 ° C for 4 hours to obtain a sintered body (hereinafter referred to as "IZO sintered body"). The sintered density was 98%. The xRD (x-ray diffraction) of the IZO sintered body target was used to confirm the solid solution of the oxidized oxide. For comparison, therefore, except for the example of the oxidized pin content of 5% by weight in the examples, the same conditions as in the previous examples were used to produce 1% by weight of oxidized oxide and 10% by weight of zirconia _ ____2____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
522480 A7 ^_ B7 _ 五、發明說明（1) (本發明之範圍外）之IZO燒結體靶子。 在圖1，顯示氧化鉻含有量10重量％之XRD測定結 果。此外，在圖2及圖3，顯示氧化锆含有量5重量％和 氧化锆含有量1重量％之IZO燒結體靶子之XRD測定結 果。 在圖1之含有氧化銷10重量％之靶子中，在20爲 3〇·24度、35·(Μ度、5〇·36度、60.24度之時，發現立方晶 ΖιΌ2之波峰，可知立方晶Zr02&未完全固溶。 此外，由於這些波峰接近Ιη203之30.50度、35·38度 、50.94度、60.56度之波峰，因此，乍看之下，Ιη2〇3之波 峰似乎擴展至低角度部位。 但是，正如圖2及圖3所顯示的，在位處於氧化鉻含 有量5重量％和氧化鉻含有量1重量％之本發明範圍內之 ΙΖΟ燒結體祀子，並無觀察到這些波峰，而得知Zr02呈固 溶。 接著，使用該IZO燒結體靶子，在玻璃基板上，藉由 DC (直流）濺鍍，於以下之條件下，形成透明電極膜。 濺鑛用氣體：Ar+02 濺鎪用氣體壓力：〇.4Pa 濺鍍用氣體流量：8SCCM 氧濃度：1% 施加功率：〇.5W/cm2 測定該情形下之球粒發生量（被覆率）；結果本實施 例之IZO燒結體中之球粒被覆率係爲10%以下。 -— ___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） '" (請先閱讀背面之注意事項再填寫本頁)522480 A7 ^ _ B7 _ 5. Explanation of the invention (1) (outside the scope of the present invention) an IZO sintered body target. Fig. 1 shows the results of XRD measurement of a chromium oxide content of 10% by weight. In addition, Fig. 2 and Fig. 3 show XRD measurement results of an IZO sintered body target having a zirconia content of 5% by weight and a zirconia content of 1% by weight. In the target containing 10% by weight of the oxidized pin in FIG. 1, when 20 is 30.24 degrees, 35.degrees, 50.36 degrees, and 60.24 degrees, the peak of the cubic crystal ZιΌ2 is found. Zr02 & is not completely solid-solubilized. In addition, since these peaks are close to the peaks of 30.50 degrees, 35.38 degrees, 50.94 degrees, and 60.56 degrees of Ι203, at first glance, the peaks of Ι203 seem to extend to low-angle parts. However, as shown in FIG. 2 and FIG. 3, these peaks were not observed in the sintered body of the IZO sintered body within the range of the present invention in which the chromium oxide content was 5% by weight and the chromium oxide content was 1% by weight. It is known that Zr02 is a solid solution. Next, using this IZO sintered body target, a transparent electrode film was formed on a glass substrate by DC (direct current) sputtering under the following conditions. Gas for sputtering: Ar + 02 sputtering Gas pressure: 0.4 Pa Gas flow rate for sputtering: 8 SCCM Oxygen concentration: 1% Applied power: 0.5 W / cm2 The amount of generated pellets (coverage) in this case was measured; as a result, in the IZO sintered body of this example The coverage of pellets is below 10%. -— ___ This paper Scale applicable Chinese National Standard (CNS) A4 size (210 X 297 mm) '" (Please read the Notes on the back to fill out this page)
A7 522480 五、發明說明（(f ) 此外，調查成膜之比電阻（Ω · cm)和在波長550nm 下之透過率％之膜特性’其結果係顯示在表1。此外’在 表1中，顯示室溫、氧濃度1%之成膜時之膜特性。 此外，爲了進行比較，因此，在表1，揭示藉由相同 之條件之所製造出之ITO膜（比較例1 )和IXO膜（比較 例2)之比電阻（Ω · cm)和在波長550nm下之透過率％ 之膜特性。 由該表1可以明顯地得知：就比電阻和透過率而言’ 本發明之實施例與比較例1之ITO幾乎不分軒輊’而維持 本發明之實施例之良好之可見光之透過率和高導電性。 得到以下所謂之結果：一般而言，相對於ITO膜’使 用本發明之IZO燒結體靶子之IZO膜，在提高基板溫度而 進行成膜之狀態下之膜特性並無大差異存在，但是’在室 溫下而進行成膜之薄膜之特性，係更加地良好。 近年來，由於液晶顯示器等之輕量化，因此，傾向使 用塑膠薄片或薄膜，取代玻璃基板。由於塑膠之耐熱性差 ，因此，要求不對於基板進行加熱或者是在低溫下進行成 膜。因此，具有像前述這樣之在室溫或低溫下之膜特性良 好之本發明之透明電極，係符合該目的，而可以說是良好 之材料。 另一方面，在比較例2之IXO膜，其透過率咼，但是 ，比電阻係顯著地變低。此外，可以確認：在比較例1和 比較例2，若實施相同於本實施例之到0.8/zm以下之粉碎 之時，鉻之污染物係顯著地增加。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 29^1釐1""""""^ (請先閱讀背面之注意事項再填寫本頁) -I · ·_ϋ I n n I n n 着 MM·* wa MIM MM I ϋ . -n n n n n n n ! n I n ! 1 n n n ! n I n ϋ· 522480 A7 五、發明說明（ 此外，比較例1和比較例2之靶子密度係分別爲93% 87%，低於本實施例，而球粒被覆率係達到70%。 表1 比電阻 (Ω · cm) 在波長550nm下之透過率（％ ) 實施例1 IZO 9.2 X10'4 94.1 比較例1 ITO 9.5 ΧΙΟ*4 94.2 比較例2 IXO 4.4 ΧΙΟ'4 98.1 接著，就前述實施例、比較例1和比較例2之透明電 極膜而言，基板溫度和蝕刻速度間之關係，係顯示在表2 。蝕刻劑係使用HC1 : Η20 : ΗΝ〇3= 1 : 1 : 0.08之混合酸 由表2可以明顯地得知：相對於成爲ΙΤΟ之比較例1 ，在基板溫度爲室溫的情形和2〇〇°C的情形下，蝕刻速度 皆是本實施例之IZO勝出。特別是在基板溫度爲20(TC的 情形下，其蝕刻速度之差異係相當地顯著。 此外，在比較例2之IXO，室溫之蝕刻性係爲927〇〇A /min，在200°C之蝕刻性係爲90900A/min，而異常地變 高；反而容易發生過度蝕刻，以致於變得不理想。 表2 (請先閱讀背面之注意事項再填寫本頁) > · In n m m —fl— eai* n ^ ^ I n i n mmmm§ Hal l_i —ϋ I ί ·ϋ 卞 矣 蝕刻速度（A/min) 室溫 20〇°〇 實施例1 ΙΖΟ 18720 18900 比較例1 ΙΤΟ 18060 253 比較例2 ΙΧΟ 92700 90900 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 522480 A7 ____B7__ 五、發明說明（[Ό) 【發明之效果】 本發明係具有以下優異之特點：可得到在維持良好之 可見光之透過率和局導電性的同時，尙具有適度之蝕刻性 之透明電極膜，並且，在形成該透明電極膜之濺鍍製程中 ，能有效率地製造高密度且球粒發生少之燒結體靶子，藉 此抑制球粒發生所伴隨之生產效率降低或品質降低’並且 ，可忽視來自粉碎用介質之污染（污染物）。此外’本發 明係具有良好之室溫或低溫下之膜特性，特別是在由於液 晶顯示器等之輕量化而取代玻璃基板改以耐熱性姜之塑膠 薄片或薄膜作爲基板的情形下爲有利的。 (請先閱讀背面之注意事項再填寫本頁) .- 線丨· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）A7 522480 V. Description of the invention ((f) In addition, the film characteristics of the specific resistance (Ω · cm) of the film formation and the transmittance% at a wavelength of 550 nm are investigated. The results are shown in Table 1. In addition, Table 1 The film characteristics at room temperature and 1% oxygen concentration are shown. For comparison, Table 1 shows the ITO film (Comparative Example 1) and IZO film manufactured under the same conditions. (Comparative Example 2) Film characteristics of specific resistance (Ω · cm) and transmittance% at a wavelength of 550 nm. It is apparent from Table 1 that, in terms of specific resistance and transmittance, examples of the present invention The ITO of Comparative Example 1 is hardly distinguished from Xuanyuan and maintains a good visible light transmittance and high conductivity of the examples of the present invention. The following so-called results are obtained: Generally speaking, the IZO of the present invention is used relative to the ITO film. The sintered body target IZO film has no significant difference in film properties when the substrate temperature is increased, but the characteristics of the thin film formed at room temperature are better. In recent years, Due to the weight reduction of liquid crystal displays, etc., Prefer to use plastic sheet or film instead of glass substrate. Due to the poor heat resistance of plastic, it is required not to heat the substrate or to form a film at low temperature. Therefore, it has the film characteristics at room temperature or low temperature as mentioned above A good transparent electrode of the present invention satisfies this purpose and can be said to be a good material. On the other hand, in the IXO film of Comparative Example 2, the transmittance was high, but the specific resistance was significantly lower. In addition, It can be confirmed that, in Comparative Example 1 and Comparative Example 2, if pulverization is performed to 0.8 / zm or less in the same manner as in this example, the chromium pollution will increase significantly. This paper standard applies Chinese National Standard (CNS) A4 Specifications (210 X 29 ^ 1 ％ 1 " " " " " " ^ (Please read the notes on the back before filling this page) -I · · _ϋ I nn I nn by MM · * wa MIM MM I ϋ. -Nnnnnnn! N I n! 1 nnn! N I n 522480 A7 V. Description of the invention (In addition, the target densities of Comparative Example 1 and Comparative Example 2 are 93% and 87%, respectively, which is lower than this example. , And the coverage rate of pellets reached 70%. Table 1 Specific resistance (Ω · cm) transmittance (%) at a wavelength of 550 nm Example 1 IZO 9.2 X10'4 94.1 Comparative Example 1 ITO 9.5 ΧΙΟ * 4 94.2 Comparative Example 2 IXO 4.4 ΧΙΟ'4 98.1 For the transparent electrode films of Examples, Comparative Examples 1 and 2, the relationship between the substrate temperature and the etching rate is shown in Table 2. As the etchant, a mixed acid of HC1: Η20: ΗΝ〇3 = 1: 1: 0.08 can be clearly understood from Table 2: Compared with Comparative Example 1 which becomes ITO, the substrate temperature is room temperature and 200. In the case of ° C, the etching rate is the IZO of this embodiment. In particular, when the substrate temperature is 20 ° C., the difference in the etching speed is quite significant. In addition, in Comparative Example 2 IXO, the etchability at room temperature is 92700 A / min at 200 ° C. The etchability is 90900A / min, which is abnormally high; on the contrary, it is prone to over-etching, which makes it unsatisfactory. Table 2 (Please read the precautions on the back before filling this page) > · In nmm —fl — Eai * n ^ ^ I nin mmmm§ Hal l_i —ϋ I ί · ϋ 卞 矣 Etching speed (A / min) Room temperature 20 °° Example 1 ΙΟΟ 18720 18900 Comparative Example 1 ΙΤ 18060 253 Comparative Example 2 ΙΟΟ 92700 90900 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 522480 A7 ____B7__ V. Description of the invention ([Ό] [Effects of the invention] The invention has the following excellent characteristics: can be obtained in good maintenance At the same time of visible light transmittance and local conductivity, it has a moderately etchable transparent electrode film, and in the sputtering process for forming the transparent electrode film, it can efficiently produce high density and less spherulite. Sintered body target, This reduction in production efficiency or quality accompanied by the suppression of the occurrence of pellets can be ignored and the pollution (pollutants) from the pulverizing medium can be ignored. In addition, the present invention has good film properties at room temperature or low temperature, especially at It is advantageous to replace the glass substrate with a heat-resistant plastic sheet or film as the substrate due to the weight reduction of the liquid crystal display, etc. (Please read the precautions on the back before filling this page).-Line 丨 · This paper Standards apply to China National Standard (CNS) A4 (210 X 297 mm)