JP2000226254A - Production of high-density ito sintered compact and the resultant sintered compact, and ito sputter target using the same - Google Patents

Production of high-density ito sintered compact and the resultant sintered compact, and ito sputter target using the same

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Publication number
JP2000226254A
JP2000226254A JP11343154A JP34315499A JP2000226254A JP 2000226254 A JP2000226254 A JP 2000226254A JP 11343154 A JP11343154 A JP 11343154A JP 34315499 A JP34315499 A JP 34315499A JP 2000226254 A JP2000226254 A JP 2000226254A
Authority
JP
Japan
Prior art keywords
ito
powder
sintered body
oxygen
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11343154A
Other languages
Japanese (ja)
Inventor
Akira Hasegawa
彰 長谷川
Shinji Fujisawa
進治 藤沢
Kunio Saegusa
邦夫 三枝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP11343154A priority Critical patent/JP2000226254A/en
Publication of JP2000226254A publication Critical patent/JP2000226254A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To obtain the subject industrially useful sintered compact excellent in characteristics as a sputter target by molding and then sintering ITO powder. SOLUTION: This ITO sintered compact is obtained by molding powder comprising indium, tin and oxygen and containing <=0.02 wt.% of halogen(s) followed by sintering the powder in an oxygen-contg. atmosphere >=90 wt.% in oxygen concentration and <=800 Pa in water vapor partial pressure at 1,500-1,650 deg.C for one hour or longer. The ITO sputter target is obtained by working the above ITO sintered compact.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高密度のITO焼
結体の製造方法に関する。
The present invention relates to a method for producing a high-density ITO sintered body.

【0002】[0002]

【従来の技術】ITO(Indium−Tin−Oxi
de、酸化インジウム−酸化錫固溶体)薄膜は、高い導
電性と優れた透光性を有することから、液晶ディスプレ
イ用等の平面表示材料の透明電極として利用されてい
る。ITO薄膜を形成させる方法としては、ITO粉末
を基材に塗布する方法や、酸化物原料粉末を成形、焼結
して得たITO焼結体ターゲットのスパッタ法によっ
て、基材面にITO膜を形成させる方法などが挙げら
る。ITO粉末を基材に塗布する方法は、抵抗が高く、
実用的な透明電極としては用いられてなく、工業的には
殆ど全てのITO膜はスパッタによって製造されてい
る。
2. Description of the Related Art ITO (Indium-Tin-Oxi)
The de, indium oxide-tin oxide solid solution) thin film is used as a transparent electrode of a flat display material for a liquid crystal display or the like because of its high conductivity and excellent translucency. As a method of forming an ITO thin film, an ITO film is applied to a base material, or an ITO sintered body target obtained by molding and sintering an oxide raw material powder is sputtered to form an ITO film on the base material surface. And the like. The method of applying ITO powder to a substrate has high resistance,
It is not used as a practical transparent electrode, and almost all ITO films are industrially manufactured by sputtering.

【0003】スパッタ法においては、当初In−Snの
合金をターゲットとする方法が用いられていたが、膜の
制御性、再現性に難点があり、現在ではITO焼結体を
ターゲットとして用いる方法が主流である。しかしなが
ら、これまでのITO焼結体ターゲットを用いたスパッ
タ法によるITO薄膜の製造方法では、ノジュールとよ
ばれるITOターゲット表面の黒化現象が起こるので、
スパッタを止めてITOターゲットを取り出し、ノジュ
ールを削り取るクリーニングと呼ばれる作業が必要なた
め、生産性が落ちるという問題があった。このノジュー
ルの発生は、密度の低いITOターゲットで起こり易
く、高密度のITOターゲットを用いるとノジュールの
発生が抑えられ、クリーニングの工程が省け、生産性が
向上するという知見が得られている。
[0003] In the sputtering method, a method using an In-Sn alloy as a target was initially used. However, there are difficulties in controllability and reproducibility of a film, and a method using an ITO sintered body as a target is presently used. Mainstream. However, in the conventional method of manufacturing an ITO thin film by sputtering using an ITO sintered body target, a blackening phenomenon of the ITO target surface called nodule occurs.
Since a work called cleaning, which removes the ITO target after stopping the sputtering and scrapes the nodule, is required, there is a problem that productivity is reduced. It has been found that the generation of this nodule is likely to occur with a low-density ITO target, and the use of a high-density ITO target suppresses the generation of nodules, thereby eliminating the cleaning step and improving the productivity.

【0004】低密度ITOターゲットの他の問題点とし
ては、スパッタを続けるうちに抵抗が高くなり、スパッ
タ効率が落ちるという点、パーティクルと呼ばれるゴミ
が、スパッタ装置内で発生し、ITO膜用の基板上に付
着し、成膜したITO膜の特性を悪くしたり、微細なI
TO膜のパターンを断線させる点、低密度ITOターゲ
ットの抵抗値が高いためにスパッタの生産性が低く、ス
パッタ中に供給電力を高めると異常放電が起き、スパッ
タを安定して行えない点等が指摘されている。
[0004] Other problems of the low-density ITO target are that the resistance increases as the sputtering continues, the sputtering efficiency decreases, and dust called particles is generated in the sputtering apparatus, and the substrate for the ITO film is removed. The properties of the deposited ITO film deposited on the surface may be deteriorated,
The point of breaking the pattern of the TO film, the low resistance of the low-density ITO target, resulting in low spatter productivity, and increasing the power supply during sputtering causes abnormal discharge, making it impossible to stably sputter. It is pointed out.

【0005】このためにITO焼結体の密度を高めるた
めに、従来から種々の提案がなされている。例えば、ホ
ットプレス法や熱間静水圧プレス(hot isost
atic press 以下、HIPと略す)法を用
い、加圧下焼結により、高密度のITO焼結体を得る方
法が挙げられる。しかしながら、ホットプレス法やHI
P法では、温度を高くすることが出来ないために、酸化
錫が十分固溶出来ず、ITOターゲットの抵抗値を下げ
らず、不均一なITOターゲットしか得られなかった。
また、ホットプレス法やHIP法を用いると、高価な設
備を必要とするため、製品の価格が高くなるという問題
がある。
For this purpose, various proposals have hitherto been made to increase the density of the ITO sintered body. For example, a hot press method or a hot isostatic press (hot isost)
Attic press (hereinafter abbreviated as HIP) method and a method of obtaining a high-density ITO sintered body by sintering under pressure. However, hot pressing and HI
In the P method, the temperature could not be raised, so that tin oxide could not be dissolved sufficiently, the resistance value of the ITO target was not reduced, and only a non-uniform ITO target could be obtained.
In addition, when the hot press method or the HIP method is used, expensive equipment is required, so that there is a problem that the price of the product increases.

【0006】また、加圧した酸素ガス雰囲気中でITO
焼結体を焼結する方法が提案されている(特開平3−2
07858号公報)が、加圧した酸素ガス雰囲気中で焼
結するためには、圧力に耐えられる高価で特殊な設備を
必要とするため、製品の価格が高くなるという問題があ
る。さらに高圧の酸素ガス雰囲気の安全性などの問題が
ある。さらに、常圧酸素ガス雰囲気中でITO焼結体を
焼結する方法も提案されている(特開平6−29934
4号公報)が、高密度のITO焼結体は得られていな
い。更に、粒径の大きい酸化錫粉末を微粒な酸化インジ
ウム粉末に混合する方法も提案されている(特開平6−
183732号公報)が、高密度を達成するには必ずし
も十分なものではない。
In addition, ITO is used in a pressurized oxygen gas atmosphere.
A method for sintering a sintered body has been proposed (Japanese Patent Laid-Open No. 3-2).
However, in order to perform sintering in a pressurized oxygen gas atmosphere, expensive and special equipment that can withstand the pressure is required, so that there is a problem that the price of the product increases. Further, there is a problem such as safety in a high-pressure oxygen gas atmosphere. Furthermore, a method of sintering an ITO sintered body in an atmosphere of oxygen gas at normal pressure has been proposed (Japanese Patent Laid-Open No. 6-29934).
No. 4), but a high-density ITO sintered body has not been obtained. Further, a method has been proposed in which tin oxide powder having a large particle size is mixed with fine indium oxide powder (Japanese Patent Laid-Open No. Hei 6-1994).
183732) is not always sufficient to achieve high density.

【0007】[0007]

【発明が解決しようとする課題】本発明の目的は、IT
O粉末を成形した後、焼結させるITOスパッタターゲ
ットの製造方法において、スパッタターゲットとしての
特性が優れ、工業的に有用なものである高密度ITO焼
結体を提供することにある。
SUMMARY OF THE INVENTION The object of the present invention is to provide an IT
An object of the present invention is to provide a high-density ITO sintered body which is excellent in characteristics as a sputter target and industrially useful in a method for manufacturing an ITO sputter target in which O powder is molded and then sintered.

【0008】[0008]

【課題を解決するための手段】本発明者等は、上記の課
題を解決すべく、鋭意検討した結果、ITOの焼結雰囲
気中の水蒸気分圧が低いほど、またITOの焼結雰囲気
中の酸素濃度が高いほど、最終的な該焼結体の高密度化
が促進される事を見出し、本発明を完成するに至った。
すなわち、本発明は、インジウムと錫と酸素からなる粉
末を成形して酸素ガス含有雰囲気中で焼結させるITO
焼結体の製造方法において、インジウムと錫と酸素から
なる粉末に含まれるハロゲン含有量が0.02重量%以
下、焼結中の酸素ガス含有雰囲気の酸素濃度が90%以
上、焼結中の酸素ガス含有雰囲気中に含まれる水蒸気分
圧が800Pa以下であり、1500℃以上1650℃
以下の温度範囲で1時間以上保持して焼結するITO焼
結体の製造方法、および該製造方法により製造されるI
TO焼結体を加工して得られるITOスパッタターゲッ
トを提供するものである。
Means for Solving the Problems The present inventors have conducted intensive studies in order to solve the above-mentioned problems, and as a result, the lower the partial pressure of water vapor in the sintering atmosphere of ITO, the lower the partial pressure of steam in the sintering atmosphere of ITO. It has been found that the higher the oxygen concentration, the higher the density of the final sintered body is promoted, and completed the present invention.
That is, the present invention provides a method of forming a powder of indium, tin and oxygen by sintering in an oxygen gas-containing atmosphere.
In the method for producing a sintered body, the halogen content contained in the powder composed of indium, tin and oxygen is 0.02% by weight or less, the oxygen concentration in the oxygen gas-containing atmosphere during sintering is 90% or more, The partial pressure of water vapor contained in the oxygen-containing atmosphere is 800 Pa or less, and 1500 ° C. to 1650 ° C.
A method for producing an ITO sintered body which is sintered while being held for at least one hour in the following temperature range, and I produced by the method.
An object of the present invention is to provide an ITO sputter target obtained by processing a TO sintered body.

【0009】[0009]

【発明の実施の形態】以下に本発明について詳しく説明
する。本発明におけるインジウムと錫と酸素からなる粉
末としては、特開平10−72253号公報に記載のI
TO粉末の製法に準じて製造できるインジウムと錫と酸
素からなる粉末、酸化インジウム粉末と酸化錫粉末との
混合粉末、indium−tin−oxide粉末と酸
化錫粉末との混合粉末、又はindium−tin−o
xide粉末と酸化インジウム粉末との混合粉末などが
挙げられる。以下、これらを総称してITOおよびIT
O粉末と略記する。これらは下記の方法により成形体と
する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. As the powder comprising indium, tin, and oxygen in the present invention, the powder described in JP-A-10-72253 can be used.
Powder comprising indium, tin and oxygen, which can be produced according to the method for producing TO powder, mixed powder of indium oxide powder and tin oxide powder, mixed powder of indium-tin-oxide powder and tin oxide powder, or indium-tin- o
A mixed powder of xide powder and indium oxide powder may be used. Hereinafter, these are collectively referred to as ITO and IT
Abbreviated as O powder. These are formed into molded articles by the following method.

【0010】該粉末の酸化錫の含量は、1〜50重量%
が好ましく、より好ましくは、2〜20重量%となるよ
うに任意に選択することができる。該粉末には、ハロゲ
ンが含まれていないことが好ましく、粉末のハロゲン含
有量は0.02重量%以下である。該粉末は、粉末のB
ET比表面積から求める1次粒子径は、好ましくは0.
05μmより大きく、1μm以下、より好ましくは0.
1μmより大きく、0.5μm以下のものを使用するこ
とが好ましい。該粉末は、凝集して2次粒子が大きくな
っている場合があるので解砕することが好ましい。解砕
後の粒度分布から求めた中心粒径は、1μm以下である
ことが好ましい。解砕方法としては、乾式ボールミル解
砕、湿式ボールミル解砕、ジェットミル解砕、あるいは
これらを組み合わせて用いることができる。この好まし
い粉末を用いることにより、焼結体密度7.10g/c
3 以上で、真密度(ITOの真密度を7.16g/
cm3とした)の99%以上にまで緻密化した高密度の
ITO焼結体が得られる。次に、該粉末を所望の形状に
成形し、更に焼結してITO焼結体を製造する。
The content of tin oxide in the powder is 1 to 50% by weight.
And more preferably, can be arbitrarily selected to be 2 to 20% by weight. The powder preferably does not contain halogen, and the halogen content of the powder is 0.02% by weight or less. The powder is powder B
The primary particle diameter determined from the ET specific surface area is preferably set to 0.1.
It is larger than 05 μm and 1 μm or less, more preferably 0.1 μm or less.
It is preferable to use one having a size larger than 1 μm and equal to or smaller than 0.5 μm. The powder is preferably pulverized because the secondary particles may be agglomerated in some cases. The central particle size determined from the particle size distribution after crushing is preferably 1 μm or less. As the crushing method, dry ball mill crushing, wet ball mill crushing, jet mill crushing, or a combination thereof can be used. By using this preferable powder, the sintered body density is 7.10 g / c.
m 3 or more, the true density (the true density of ITO is 7.16 g /
cm 3 ) to obtain a high-density ITO sintered body that has been densified to 99% or more. Next, the powder is formed into a desired shape and further sintered to manufacture an ITO sintered body.

【0011】該粉末の成形体を取得する方法としては、
公知の種々の方法が用いられ、例えば、乾式成形法とし
ては、乾式プレス、冷間静水圧成形(CIP)が、湿式
成形法としては、スリップキャスティング、テープキャ
スティング等が、その他射出成形法等が挙げられる。乾
式成形法を用いる場合には、予め粉末をスラリーにし、
次いでスプレードライ等により顆粒の形状にしておく
と、成形時の操作性が向上し、より均一な成形体が得ら
れる等の効果がある。成形時には、粉末の分散性を高め
るための分散剤、保形性を持たせるためのバインダー、
成形型から取り出しやすくするための離型剤、粉末同士
の摩擦を低減する滑剤等を必要に応じて添加する。分散
剤としてはノニオン、カチオン系等の界面活性剤が、バ
インダーとしては、ポリビニルアルコール、ポリエチレ
ングリコール、ポリメチルメタクリレート等の高分子
が、離型剤としてはミクロワックスエマルジョン等が、
滑剤としてはグリセリン等が好適に用いられる。
As a method for obtaining a compact of the powder,
Various known methods are used, for example, dry pressing and cold isostatic pressing (CIP) as dry molding methods, slip casting and tape casting as wet molding methods, and other injection molding methods and the like. No. When using the dry molding method, the powder is slurried in advance,
Then, when the granules are formed into a shape by spray drying or the like, operability at the time of molding is improved, and effects such as obtaining a more uniform molded body are obtained. At the time of molding, a dispersant for enhancing the dispersibility of the powder, a binder for imparting shape retention,
A release agent for facilitating removal from the mold, a lubricant for reducing friction between powders, and the like are added as necessary. Nonionic, cationic surfactants and the like as dispersants, polyvinyl alcohol, polyethylene glycol, polymers such as polymethyl methacrylate as binders, microwax emulsions and the like as release agents,
Glycerin and the like are preferably used as the lubricant.

【0012】このようにして得られた該粉末の成形体を
焼結して、緻密化する。焼結は粉末同士を拡散によって
固着させる操作で、高温度が必要であり、電気炉等を用
いる通常の焼結装置を用いて行うことが出来る。焼結温
度としては、1500℃以上1650℃以下の温度範囲
で1時間以上、好ましくは3時間以上保持する。焼結
前、すなわち、焼結がはじまる温度より低い温度、すな
わち1000℃以上1300℃以下の温度範囲で1時間
以上、さらには3時間以上保持することが好ましい。
The powder compact thus obtained is sintered and densified. Sintering is an operation of fixing powders by diffusion and requires a high temperature, and can be performed using a normal sintering apparatus using an electric furnace or the like. The sintering temperature is maintained in a temperature range from 1500 ° C. to 1650 ° C. for 1 hour or more, preferably 3 hours or more. Before sintering, that is, at a temperature lower than the temperature at which sintering starts, that is, at a temperature in the range of 1000 ° C. to 1300 ° C., the temperature is preferably maintained for 1 hour or more, and more preferably 3 hours or more.

【0013】本発明において焼結時の雰囲気は、酸化性
雰囲気、すなわち、酸素ガス含有雰囲気下、空気、酸素
濃度を高めた空気、酸素雰囲気等が挙げられ、酸素濃度
90%以上の雰囲気であり、さらには酸素濃度95%以
上の雰囲気が好ましい。 焼結時の酸素ガス含有雰囲気
は、水蒸気を含んでいないことが好ましく、水蒸気含有
量は、水蒸気分圧として800Pa以下、好ましくは4
00Pa以下、さらに好ましくは200Pa以下である
ことが好ましい。焼結時の酸素ガス含有雰囲気の水蒸気
含有量を減らすためには、電気炉内を真空引きして、残
存している水蒸気や炉壁、炉材、断熱材などに吸着して
いる水分を除くことが好ましい。また、酸素ボンベに充
填されている酸素ガスのように水蒸気含有量が少ない酸
素ガスを流して電気炉内の雰囲気の水蒸気量を少なくす
ることが好ましい。また、流通するガスを乾燥剤などを
通してガス中に溶存する水蒸気量を減少させる方法もあ
る。
In the present invention, the atmosphere during sintering includes an oxidizing atmosphere, that is, an atmosphere containing oxygen gas, air, air with an increased oxygen concentration, an oxygen atmosphere, and the like. Further, an atmosphere having an oxygen concentration of 95% or more is preferable. The oxygen gas-containing atmosphere at the time of sintering preferably does not contain water vapor, and the water vapor content is 800 Pa or less as a water vapor partial pressure, preferably 4 Pa or less.
It is preferably at most 00 Pa, more preferably at most 200 Pa. In order to reduce the water vapor content of the oxygen gas-containing atmosphere during sintering, the inside of the electric furnace is evacuated to remove residual water vapor and moisture adsorbed on the furnace wall, furnace material, heat insulating material, etc. Is preferred. Further, it is preferable to flow an oxygen gas having a small water vapor content such as an oxygen gas filled in an oxygen cylinder to reduce the amount of water vapor in the atmosphere in the electric furnace. There is also a method of reducing the amount of water vapor dissolved in a flowing gas by passing the gas through a desiccant or the like.

【0014】本発明のITO焼結体の製造方法によれ
ば、高密度のITO焼結体が得られ、本焼結体をスパッ
タターゲットとして用いた場合、ノジュールの低減、ス
パッタ効率の向上、パーティクルの減少、異常放電の減
少、成膜されたITO膜の高品質化などが期待できる。
また、緻密な高密度のITO焼結体はITOスパッタタ
ーゲットとしての特性が優れ、工業的に有用なものであ
る。
According to the method for producing an ITO sintered body of the present invention, a high-density ITO sintered body can be obtained. When this sintered body is used as a sputter target, nodules can be reduced, sputtering efficiency can be improved, and particles can be reduced. It can be expected to reduce the number of abnormal discharges, improve the quality of the formed ITO film, and the like.
Further, a dense and high-density ITO sintered body has excellent characteristics as an ITO sputter target and is industrially useful.

【0015】本発明のITO焼結体を、研削、研磨して
インジウムはんだで、銅製バッキングプレートにボンデ
ィングする等の通常のITOターゲットを製造する方法
により、液晶ディスプレイ(LCD)用等の透明導電膜
を作製するためのスパッタターゲットが得られる。
A transparent conductive film for a liquid crystal display (LCD) or the like is produced by a method of manufacturing a normal ITO target such as grinding and polishing the ITO sintered body of the present invention and bonding it to a copper backing plate with indium solder. Is obtained.

【0016】[0016]

【実施例】次に本発明を実施例によりさらに詳しく説明
するが、本発明はこれらの実施例に限定されるものでは
ない。
EXAMPLES Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

【0017】なお、本発明における焼結体の密度測定は
次のようにして行った。 ITO焼結体の密度測定 ITO焼結体のかさ密度は、JIS Z 8807−1
976およびJISR 2205−1992の測定法に
準じてアルキメデス法(浮力法)で求めた。
The measurement of the density of the sintered body in the present invention was performed as follows. Measurement of Density of ITO Sintered Body The bulk density of the ITO sintered body is measured in accordance with JIS Z8807-1.
It was determined by the Archimedes method (buoyancy method) according to the measurement method of 976 and JISR 2205-1992.

【0018】相対密度を出すための真密度は次式により
7.16g/cm3とした。酸化インジウムの密度7.
18g/cm3と酸化錫の密度6.95g/cm3と酸化
錫の含量10wt%から次式により計算した。
The true density for obtaining the relative density was 7.16 g / cm 3 according to the following equation. 6. Indium oxide density
It was calculated from the following equation from 18 g / cm 3 , the density of tin oxide 6.95 g / cm 3 and the content of tin oxide 10 wt%.

【0019】実施例1 BET比表面積3.26m2/g、BET比表面積から求
めた1次粒子径が、0.26μmであるインジウムと錫
と酸素からなる酸化物粉末をボールミルで解砕した。該
粉末のインジウムと錫と酸素の組成は、酸化物として計
算した重量比[SnO2/(In23+SnO2)]が1
0%になるように調製した。該粉末を蛍光X線分析法で
分析したところ塩素のピークは検出されず、該粉末の塩
素含有量は、100ppm(0.01重量%)以下であ
った。該粉末をボールミルで解砕後、レーザー回折法で
求めた中心粒径D50は0.6μmであった。該粉末に
バインダーを加えスプレードライし顆粒化した。該粉末
をφ20mm金型に充填し100kg/cm2にて一軸
加圧成形後、3ton/cm2の圧力にてCIP加圧を
おこなった。得られた成形体を脱脂用の電気炉に入れ、
600℃まで昇温して脱脂を行った。
Example 1 An oxide powder composed of indium, tin and oxygen and having a BET specific surface area of 3.26 m 2 / g and a primary particle size of 0.26 μm determined from the BET specific surface area was crushed by a ball mill. The composition of indium, tin, and oxygen in the powder has a weight ratio [SnO 2 / (In 2 O 3 + SnO 2 )] calculated as an oxide of 1
It was adjusted to be 0%. When the powder was analyzed by X-ray fluorescence spectrometry, no chlorine peak was detected, and the chlorine content of the powder was 100 ppm (0.01% by weight) or less. After pulverizing the powder with a ball mill, the center particle diameter D50 determined by a laser diffraction method was 0.6 μm. A binder was added to the powder and spray dried to granulate. The powder was filled in a φ20 mm mold, uniaxially pressed at 100 kg / cm 2, and then subjected to CIP pressing at a pressure of 3 ton / cm 2 . Put the obtained molded body in an electric furnace for degreasing,
The temperature was raised to 600 ° C. to perform degreasing.

【0020】脱脂が済んだ成形体を、焼結用の電気炉に
入れ炉内の空気を真空ポンプで引いた。酸素ボンベの乾
燥している純度99.5%以上の酸素ガスを電気炉内に
導入し電気炉内の雰囲気を乾燥酸素ガスに置換した。置
換後は、乾燥酸素ガスを500ml/分の流量で流しな
がら、電気炉の昇温を行った。昇温速度200℃/時で
1200℃まで昇温し1200℃で12時間保持した
後、昇温速度200℃/時で1600℃まで昇温した。
1600℃で10時間焼結してITO焼結体を得た。焼
結中の雰囲気酸素ガスの水蒸気分圧を調べるため電気炉
のガス出口から出てきたガスの露点を露点計で測定し
た。露点はマイナス70℃で、焼結雰囲気の酸素ガス中
の水蒸気分圧は0.26Paだった。得られた焼結体の
密度は、7.142g/cm3で相対密度99.75%
であった。
The degreased compact was placed in an electric furnace for sintering, and the air in the furnace was pulled by a vacuum pump. Oxygen gas with a purity of 99.5% or more in which the oxygen cylinder was dried was introduced into the electric furnace, and the atmosphere in the electric furnace was replaced with dry oxygen gas. After the replacement, the temperature of the electric furnace was increased while flowing dry oxygen gas at a flow rate of 500 ml / min. After the temperature was raised to 1200 ° C. at a rate of 200 ° C./hour and maintained at 1200 ° C. for 12 hours, the temperature was raised to 1600 ° C. at a rate of 200 ° C./hour.
Sintering was performed at 1600 ° C. for 10 hours to obtain an ITO sintered body. The dew point of the gas coming out of the gas outlet of the electric furnace was measured with a dew point meter in order to examine the partial pressure of water vapor of the oxygen gas in the atmosphere during sintering. The dew point was −70 ° C., and the partial pressure of water vapor in the oxygen gas in the sintering atmosphere was 0.26 Pa. The density of the obtained sintered body was 7.142 g / cm 3 and the relative density was 99.75%.
Met.

【0021】実施例2 実施例1と同様にして得られた脱脂済み成形体を、焼結
用の電気炉に入れ炉内の空気を真空ポンプで引いた。酸
素ボンベの乾燥している酸素ガスを室温において水でバ
ブリングして加湿し、酸素ボンベの乾燥している酸素ガ
スに混合して、露点がマイナス40℃になるように調整
した加湿している酸素ガスを作製した。加湿酸素ガスを
電気炉内に導入し電気炉内の雰囲気を加湿酸素ガスに置
換した。置換後は、加湿酸素ガスを500ml/分の流
量でフローしながら、電気炉の昇温を行った。電気炉の
昇温方法は、実施例1と同様に行った。1600℃で1
0時間焼結してITO焼結体を得た。焼結中の雰囲気酸
素ガスの水蒸気分圧を調べるため電気炉のガス出口から
出てきたガスの露点を露点計で測定した。露点はマイナ
ス40℃で、焼結雰囲気の酸素ガス中の水蒸気分圧は1
3Paだった。得られた焼結体の密度は、7.142g
/cm3で相対密度99.75%であった。
Example 2 A degreased compact obtained in the same manner as in Example 1 was placed in an electric furnace for sintering, and the air in the furnace was pulled by a vacuum pump. Dry oxygen gas in an oxygen cylinder is humidified by bubbling with water at room temperature and mixed with dry oxygen gas in an oxygen cylinder to adjust the dew point to minus 40 ° C. A gas was made. Humidified oxygen gas was introduced into the electric furnace, and the atmosphere in the electric furnace was replaced with humidified oxygen gas. After the replacement, the temperature of the electric furnace was increased while flowing the humidified oxygen gas at a flow rate of 500 ml / min. The temperature of the electric furnace was raised in the same manner as in Example 1. 1 at 1600 ° C
Sintering was performed for 0 hour to obtain an ITO sintered body. The dew point of the gas coming out of the gas outlet of the electric furnace was measured with a dew point meter in order to examine the partial pressure of water vapor of the oxygen gas in the atmosphere during sintering. The dew point is minus 40 ° C and the partial pressure of water vapor in oxygen gas in the sintering atmosphere is 1
It was 3 Pa. The density of the obtained sintered body is 7.142 g.
/ Cm 3 and the relative density was 99.75%.

【0022】実施例3 露点がマイナス20℃になるように、水でバブリングし
た加湿酸素ガスの流量と乾燥酸素ガスの流量を調整した
以外は、実施例2と同様にして、ITO焼結体を得た。
電気炉のガス出口から出てきたガスの露点は、マイナス
20℃で焼結雰囲気の酸素ガス中の水蒸気分圧は104
Paだった。得られた焼結体の密度は、7.135g/
cm3で相対密度99.65%であった。
Example 3 An ITO sintered body was prepared in the same manner as in Example 2 except that the flow rate of the humidified oxygen gas bubbled with water and the flow rate of the dry oxygen gas were adjusted so that the dew point was -20 ° C. Obtained.
The dew point of the gas coming out of the gas outlet of the electric furnace is −20 ° C., and the partial pressure of water vapor in the oxygen gas in the sintering atmosphere is 104 ° C.
It was Pa. The density of the obtained sintered body was 7.135 g /
The relative density was 99.65% in cm 3 .

【0023】実施例4 露点がマイナス15℃になるように、水でバブリングし
た加湿酸素ガスの流量と乾燥酸素ガスの流量を調整した
以外は、実施例2と同様にして、ITO焼結体を得た。
電気炉のガス出口から出てきたガスの露点は、マイナス
15℃で焼結雰囲気の酸素ガス中の水蒸気分圧は167
Paだった。得られた焼結体の密度は、7.130g/
cm3で相対密度99.58%であった。
Example 4 An ITO sintered body was prepared in the same manner as in Example 2 except that the flow rate of the humidified oxygen gas bubbled with water and the flow rate of the dry oxygen gas were adjusted so that the dew point was -15 ° C. Obtained.
The dew point of the gas coming out of the gas outlet of the electric furnace was minus 15 ° C, and the partial pressure of water vapor in the oxygen gas in the sintering atmosphere was 167.
It was Pa. The density of the obtained sintered body was 7.130 g /
The relative density was 99.58% in cm 3 .

【0024】実施例5 露点がマイナス10℃になるように、水でバブリングし
た加湿酸素ガスの流量と乾燥酸素ガスの流量を調整した
以外は、実施例2と同様にして、ITO焼結体を得た。
電気炉のガス出口から出てきたガスの露点は、マイナス
10℃で焼結雰囲気の酸素ガス中の水蒸気分圧は262
Paだった。得られた焼結体の密度は、7.121g/
cm3で相対密度99.46%であった。
Example 5 An ITO sintered body was prepared in the same manner as in Example 2 except that the flow rate of the humidified oxygen gas bubbled with water and the flow rate of the dry oxygen gas were adjusted so that the dew point became -10 ° C. Obtained.
The dew point of the gas coming out of the gas outlet of the electric furnace is −10 ° C., and the partial pressure of water vapor in the oxygen gas in the sintering atmosphere is 262.
It was Pa. The density of the obtained sintered body was 7.121 g /
The relative density was 99.46% in cm 3 .

【0025】実施例6 露点が0℃になるように、水でバブリングした加湿酸素
ガスの流量と乾燥酸素ガスの流量を調整した以外は、実
施例2と同様にして、ITO焼結体を得た。電気炉のガ
ス出口から出てきたガスの露点は、0℃で焼結雰囲気の
酸素ガス中の水蒸気分圧は608Paだった。得られた
焼結体の密度は、7.054g/cm3で相対密度9
8.52%であった。
Example 6 An ITO sintered body was obtained in the same manner as in Example 2, except that the flow rate of the humidified oxygen gas bubbled with water and the flow rate of the dry oxygen gas were adjusted so that the dew point was 0 ° C. Was. The dew point of the gas coming out of the gas outlet of the electric furnace was 0 ° C., and the partial pressure of water vapor in the oxygen gas in the sintering atmosphere was 608 Pa. The density of the obtained sintered body was 7.054 g / cm 3 and the relative density was 9
8.52%.

【0026】比較例1 露点が10℃になるように、水でバブリングした加湿酸
素ガスの流量と乾燥酸素ガスの流量を調整した以外は、
実施例2と同様にして、ITO焼結体を得た。電気炉の
ガス出口から出てきたガスの露点は、10℃で焼結雰囲
気の酸素ガス中の水蒸気分圧は1227Paだった。得
られた焼結体の密度は、6.852g/cm3で相対密
度95.70%であった。
Comparative Example 1 Except that the flow rate of the humidified oxygen gas bubbled with water and the flow rate of the dry oxygen gas were adjusted so that the dew point was 10 ° C.
An ITO sintered body was obtained in the same manner as in Example 2. The dew point of the gas discharged from the gas outlet of the electric furnace was 10 ° C., and the partial pressure of water vapor in the oxygen gas in the sintering atmosphere was 1,227 Pa. The density of the obtained sintered body was 6.852 g / cm 3 and the relative density was 95.70%.

【0027】比較例2 露点が15℃になるように、水でバブリングした加湿酸
素ガスの流量と乾燥酸素ガスの流量を調整した以外は、
実施例2と同様にして、ITO焼結体を得た。電気炉の
ガス出口から出てきたガスの露点は、15℃で焼結雰囲
気の酸素ガス中の水蒸気分圧は1704Paだった。得
られた焼結体の密度は、6.718g/cm3で相対密度
93.82%であった。
Comparative Example 2 Except that the flow rate of the humidified oxygen gas bubbled with water and the flow rate of the dry oxygen gas were adjusted so that the dew point was 15 ° C.
An ITO sintered body was obtained in the same manner as in Example 2. The dew point of the gas coming out of the gas outlet of the electric furnace was 15 ° C., and the partial pressure of water vapor in the oxygen gas in the sintering atmosphere was 1704 Pa. The density of the obtained sintered body was 6.718 g / cm 3 and the relative density was 93.82%.

【0028】比較例3 実施例1と同様にして得られた脱脂済み成形体を、焼結
用の電気炉に入れ炉内の空気を真空ポンプで引いた。酸
素ボンベの乾燥している酸素ガスを室温において水でバ
ブリングして加湿した。加湿酸素ガスを電気炉内に導入
し電気炉内の雰囲気を加湿酸素ガスに置換した。置換後
は、加湿酸素ガスを500ml/分の流量で流しなが
ら、電気炉の昇温を行った。電気炉の昇温方法は、実施
例1と同様に行った。1600℃で10時間焼結してI
TO焼結体を得た。室温は25℃で、酸素ガスを水でバ
ブリングしているので、酸素ガスは25℃の飽和水蒸気
量を含んでいると考えられ、焼結雰囲気中の酸素ガスの
露点は25℃、含まれる水蒸気分圧は3167Paと考
えられる。得られた焼結体の密度は、6.130g/c
3で相対密度85.61%であった。
Comparative Example 3 The degreased compact obtained in the same manner as in Example 1 was placed in an electric furnace for sintering, and the air in the furnace was pulled by a vacuum pump. Dry oxygen gas in the oxygen cylinder was humidified by bubbling with water at room temperature. Humidified oxygen gas was introduced into the electric furnace, and the atmosphere in the electric furnace was replaced with humidified oxygen gas. After the replacement, the temperature of the electric furnace was increased while flowing humidified oxygen gas at a flow rate of 500 ml / min. The temperature of the electric furnace was raised in the same manner as in Example 1. Sintered at 1600 ° C for 10 hours
A TO sintered body was obtained. Since the room temperature is 25 ° C. and the oxygen gas is bubbled with water, it is considered that the oxygen gas contains a saturated steam amount of 25 ° C., and the dew point of the oxygen gas in the sintering atmosphere is 25 ° C. The partial pressure is considered to be 3167 Pa. The density of the obtained sintered body is 6.130 g / c.
The relative density was 85.61% at m 3 .

【0029】実施例7 実施例1と同様にして得られた脱脂済み成形体を、焼結
用の電気炉に入れ炉内の空気を真空ポンプで引いた。酸
素ボンベの乾燥している酸素ガスと窒素ボンベの乾燥し
ている窒素ガスとを混合して、酸素濃度が95%になる
ように調整した酸素ガスと窒素ガスの混合ガスを作製し
た。酸素ガスと窒素ガスの混合ガスを電気炉内に導入し
電気炉内の雰囲気を混合ガスに置換した。置換後は、混
合ガスを500ml/分の流量で流しながら、電気炉の
昇温を行った。昇温速度200℃/時で1200℃まで
昇温し1200℃で12時間保持した後、昇温速度20
0℃/時で1600℃まで昇温した。1600℃で10
時間焼結してITO焼結体を得た。焼結中の混合ガスの
水蒸気分圧と酸素濃度を調べるため電気炉のガス出口か
ら出てきたガスの露点と酸素濃度を露点計と酸素センサ
ーでそれぞれ測定した。露点はマイナス70℃で、焼結
雰囲気の酸素ガス中の水蒸気分圧は0.26Pa、酸素
濃度は95%だった。得られた焼結体の密度は、7.1
24g/cm 3で相対密度99.50%であった。
Example 7 A degreased compact obtained in the same manner as in Example 1 was sintered.
And the air in the furnace was drawn by a vacuum pump. acid
Dry oxygen gas and dry nitrogen gas cylinder
Oxygen concentration becomes 95% by mixing with nitrogen gas
To produce a mixed gas of oxygen gas and nitrogen gas
Was. A mixed gas of oxygen gas and nitrogen gas is introduced into the electric furnace.
The atmosphere in the electric furnace was replaced with a mixed gas. After replacement,
While flowing the combined gas at a flow rate of 500 ml / min,
The temperature was raised. Up to 1200 ° C at 200 ° C / hour
After the temperature was raised and held at 1200 ° C. for 12 hours, the temperature was raised at a rate of 20
The temperature was raised to 1600 ° C. at 0 ° C./hour. 10 at 1600 ° C
After sintering for an hour, an ITO sintered body was obtained. Of the gas mixture during sintering
To check the partial pressure of water vapor and oxygen concentration?
Dew point and oxygen concentration
And each was measured. Dew point is minus 70 ° C, sintered
The partial pressure of water vapor in the oxygen gas in the atmosphere is 0.26 Pa,
The concentration was 95%. The density of the obtained sintered body is 7.1
24g / cm ThreeAnd the relative density was 99.50%.

【0030】実施例8 混合ガスの酸素濃度が90%になるように調整した以外
は、実施例7と同様にして、ITO焼結体を得た。電気
炉のガス出口から出てきたガスの露点はマイナス70℃
で、焼結雰囲気の酸素ガス中の水蒸気分圧は0.26P
a、酸素濃度は90%だった。得られた焼結体の密度
は、7.096g/cm3で相対密度99.11%であ
った。
Example 8 An ITO sintered body was obtained in the same manner as in Example 7, except that the oxygen concentration of the mixed gas was adjusted to 90%. Dew point of gas coming out of gas outlet of electric furnace is minus 70 ° C
And the partial pressure of water vapor in the oxygen gas in the sintering atmosphere is 0.26P
a, The oxygen concentration was 90%. The density of the obtained sintered body was 7.096 g / cm 3 and the relative density was 99.11%.

【0031】比較例4 酸素濃度が50%になるように酸素ガスと窒素ガスを混
合した以外は、実施例7と同様にして、ITO焼結体を
得た。電気炉のガス出口から出てきたガスの露点はマイ
ナス70℃で、焼結雰囲気の酸素ガス中の水蒸気分圧は
0.26Pa、酸素濃度は50%だった。得られた焼結
体の密度は、6.924g/cm3で相対密度96.7
0%であった。
Comparative Example 4 An ITO sintered body was obtained in the same manner as in Example 7, except that oxygen gas and nitrogen gas were mixed so that the oxygen concentration became 50%. The dew point of the gas discharged from the gas outlet of the electric furnace was -70 ° C, the partial pressure of water vapor in the oxygen gas in the sintering atmosphere was 0.26 Pa, and the oxygen concentration was 50%. The density of the obtained sintered body was 6.924 g / cm 3 and the relative density was 96.7.
It was 0%.

【0032】比較例5 粉末の蛍光X線分析法で分析した塩素の含有量が、30
0ppm(0.03重量%)である以外は、実施例1と
同様の方法で、ITO焼結体を得た。得られた焼結体の
密度は、7.110g/cm3で相対密度99.30%
であった。
Comparative Example 5 A powder having a chlorine content of 30 analyzed by X-ray fluorescence analysis was 30
Except for 0 ppm (0.03% by weight), an ITO sintered body was obtained in the same manner as in Example 1. The density of the obtained sintered body was 7.110 g / cm 3 and the relative density was 99.30%.
Met.

【0033】比較例6 粉末の蛍光X線分析法で分析した塩素の含有量が、10
00ppm(0.1重量%)である以外は、比較例1と
同様の方法で、ITO焼結体を得た。得られた焼結体の
密度は、6.995g/cm3で相対密度97.70%
であった。
Comparative Example 6 The chlorine content of the powder analyzed by fluorescent X-ray analysis was 10%.
An ITO sintered body was obtained in the same manner as in Comparative Example 1 except that the amount was 00 ppm (0.1% by weight). The density of the obtained sintered body was 6.995 g / cm 3 and the relative density was 97.70%.
Met.

【0034】比較例7 粉末の蛍光X線分析法で分析した塩素の含有量が、30
0ppm(0.03重量%)であり、昇温過程で120
0℃で12時間の保持を行わない以外は実施例1と同様
の方法で、ITO焼結体を得た。得られた焼結体の密度
は、6.981g/cm3で相対密度97.50%であ
った。
Comparative Example 7 The chlorine content of the powder analyzed by X-ray fluorescence analysis was 30%.
0 ppm (0.03% by weight).
An ITO sintered body was obtained in the same manner as in Example 1 except that the holding at 0 ° C. for 12 hours was not performed. The density of the obtained sintered body was 6.981 g / cm 3 and the relative density was 97.50%.

【0035】比較例8 粉末の蛍光X線分析法で分析した塩素の含有量が、10
00ppm(0.1重量%)である以外は、比較例7と
同様の方法で、ITO焼結体を得た。得られた焼結体の
密度は、6.745g/cm3で相対密度94.20%
であった。
Comparative Example 8 The chlorine content of the powder analyzed by X-ray fluorescence analysis was 10%.
An ITO sintered body was obtained in the same manner as in Comparative Example 7, except that the amount was 00 ppm (0.1% by weight). The density of the obtained sintered body was 6.745 g / cm 3 and the relative density was 94.20%.
Met.

【0036】以上の結果を下記の表1、表2および表3
に纏める。
The above results are shown in Tables 1, 2 and 3 below.
Put together.

【0037】[0037]

【表1】 露点(℃) 水蒸気分圧(Pa) 焼結体密度(g/cm3) 相対密度(%) 実施例1 −70 0.26 7.142 99.75 実施例2 −40 13 7.142 99.75 実施例3 −20 104 7.135 99.65 実施例4 −15 167 7.130 99.58 実施例5 −10 262 7.121 99.46 実施例6 0 608 7.054 98.52 比較例1 +10 1227 6.852 95.70 比較例2 +15 1704 6.718 93.82 比較例3 +25 3167 6.130 85.61Table 1 Dew point (° C.) Steam partial pressure (Pa) Sintered body density (g / cm 3 ) Relative density (%) Example 1-70 0.26 7.142 99.75 Example 2 -40 13 7 .142 99.75 Example 3 -20 104 7.135 99.65 Example 4 -15 167 7.130 99.58 Example 5 -10 262 7.121 99.46 Example 6 0 608 7.054 98 .52 Comparative Example 1 +10 1227 6.852 95.70 Comparative Example 2 +15 1704 6.718 93.82 Comparative Example 3 +25 3167 6.130 85.61

【0038】[0038]

【表2】 露点(℃) 酸素濃度 焼結体密度(g/cm3) 相対密度(%) 実施例1 −70 99.5%以上 7.142 99.75 実施例7 −70 95% 7.124 99.50 実施例8 −70 90% 7.096 99.11 比較例4 −70 50% 6.924 96.70Table 2 Dew point (° C) Oxygen concentration Sintered body density (g / cm 3 ) Relative density (%) Example 1-70 99.5% or more 7.142 99.75 Example 7-70 95% 124 99.50 Example 8 -70 90% 7.096 99.11 Comparative Example 4 -70 50% 6.924 96.70

【0039】[0039]

【表3】 塩素含有量 1200℃保持 焼結体密度(g/cm3) 相対密度(%) 実施例1 0.01%以下 12時間 7.142 99.75 比較例5 0.03% 12時間 7.110 99.30 比較例6 0.10% 12時間 6.995 97.70 比較例7 0.03% 無し 6.981 97.50 比較例8 0.10% 無し 6.745 94.20Table 3 Chlorine content Maintained at 1200 ° C Sintered body density (g / cm 3 ) Relative density (%) Example 1 0.01% or less 12 hours 7.142 99.75 Comparative example 5 0.03% 12 hours 7.110 99.30 Comparative Example 6 0.10% 12 hours 6.995 97.70 Comparative Example 7 0.03% None 6.981 97.50 Comparative Example 8 0.10% None 6.745 94.20

【0040】[0040]

【発明の効果】本発明によれば、ITO粉末、酸化イン
ジウム粉末と酸化錫粉末との混合粉末、ITO粉末と酸
化錫粉末との混合粉末、又はITO粉末と酸化インジウ
ム粉末との混合粉末などの形態の粉末を成形することに
より得られる成形体を焼結することにより、焼結密度の
高い緻密なITO焼結体を容易に得ることができる。こ
のようにして得られる高密度ITO焼結体はITOスパ
ッタターゲットとしての優れた特性を有し、工業的に有
用である。
According to the present invention, ITO powder, mixed powder of indium oxide powder and tin oxide powder, mixed powder of ITO powder and tin oxide powder, or mixed powder of ITO powder and indium oxide powder, etc. By sintering the compact obtained by molding the powder of the form, a dense ITO sintered body having a high sintering density can be easily obtained. The high-density ITO sintered body thus obtained has excellent characteristics as an ITO sputter target and is industrially useful.

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】インジウムと錫と酸素からなる粉末を成形
して酸素ガス含有雰囲気中で焼結させるITO焼結体の
製造方法において、インジウムと錫と酸素からなる粉末
に含まれるハロゲン含有量が0.02重量%以下、焼結
中の酸素ガス含有雰囲気の酸素濃度が90%以上、焼結
中の酸素ガス含有雰囲気中に含まれる水蒸気分圧が80
0Pa以下であり、1500℃以上1650℃以下の温
度範囲で1時間以上保持して焼結することを特徴とする
ITO焼結体の製造方法。
1. A method for producing an ITO sintered body, comprising forming a powder comprising indium, tin and oxygen and sintering the powder in an atmosphere containing oxygen gas, wherein the halogen content contained in the powder comprising indium, tin and oxygen is reduced. 0.02% by weight or less, the oxygen concentration in the oxygen gas-containing atmosphere during sintering is 90% or more, and the partial pressure of water vapor contained in the oxygen gas-containing atmosphere during sintering is 80% or less.
A method for producing an ITO sintered body, wherein the sintered body is held at a temperature of 1500 ° C. or more and 1650 ° C. or less for 1 hour or more.
【請求項2】水蒸気分圧が400Pa以下である請求項
1記載の製造方法。
2. The method according to claim 1, wherein the partial pressure of steam is 400 Pa or less.
【請求項3】水蒸気分圧が200Pa以下である請求項
1記載の製造方法。
3. The method according to claim 1, wherein the partial pressure of steam is 200 Pa or less.
【請求項4】焼結中の酸素ガス含有雰囲気の酸素濃度が
95%以上である請求項1に記載の製造方法。
4. The method according to claim 1, wherein the oxygen concentration in the oxygen gas-containing atmosphere during sintering is 95% or more.
【請求項5】インジウムと錫と酸素からなる粉末のBE
T径が0.05μmを超え1μm以下であり、累積粒度
分布の50%径が1μm以下である請求項1に記載の製
造方法。
5. BE of a powder comprising indium, tin and oxygen
The production method according to claim 1, wherein the T diameter is more than 0.05 µm and 1 µm or less, and the 50% diameter of the cumulative particle size distribution is 1 µm or less.
【請求項6】インジウムと錫と酸素と水素からなる水酸
化物粉末をハロゲン化水素ガス、またはハロゲンガスを
1体積%以上含有する雰囲気ガス中で焼成して、インジ
ウムと錫と酸素からなる酸化物粉末を作製して、該粉末
を成形して焼結する請求項1に記載の製造方法。
6. Oxidation comprising indium, tin and oxygen by firing a hydroxide powder comprising indium, tin, oxygen and hydrogen in a hydrogen halide gas or an atmosphere gas containing at least 1% by volume of halogen gas. The production method according to claim 1, wherein a product powder is produced, and the powder is molded and sintered.
【請求項7】焼結前に1000℃以上1300℃以下の
温度範囲で1時間以上保持する請求項1に記載の製造方
法。
7. The method according to claim 1, wherein the sintering is performed at a temperature in a range of 1000 ° C. to 1300 ° C. for 1 hour or more.
【請求項8】請求項1に記載の方法により製造されるI
TO焼結体。
8. I prepared by the method according to claim 1.
TO sintered body.
【請求項9】請求項1に記載の方法により製造されるI
TO焼結体を加工して得られるITOスパッタターゲッ
ト。
9. An I prepared by the method according to claim 1.
An ITO sputter target obtained by processing a TO sintered body.
JP11343154A 1998-12-03 1999-12-02 Production of high-density ito sintered compact and the resultant sintered compact, and ito sputter target using the same Pending JP2000226254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-344242 1998-12-03
JP34424298 1998-12-03
JP11343154A JP2000226254A (en) 1998-12-03 1999-12-02 Production of high-density ito sintered compact and the resultant sintered compact, and ito sputter target using the same

Publications (1)

Publication Number Publication Date
JP2000226254A true JP2000226254A (en) 2000-08-15

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002226966A (en) * 2001-02-01 2002-08-14 Nikko Materials Co Ltd Transparent electrode film, and sputtering target for deposition of the electrode film
WO2010064719A1 (en) * 2008-12-01 2010-06-10 住友金属鉱山株式会社 Method for producing transparent conductive film, transparent conductive film, transparent conductive substrate and device comprising same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002226966A (en) * 2001-02-01 2002-08-14 Nikko Materials Co Ltd Transparent electrode film, and sputtering target for deposition of the electrode film
WO2010064719A1 (en) * 2008-12-01 2010-06-10 住友金属鉱山株式会社 Method for producing transparent conductive film, transparent conductive film, transparent conductive substrate and device comprising same
JP5418502B2 (en) * 2008-12-01 2014-02-19 住友金属鉱山株式会社 Manufacturing method of transparent conductive film, transparent conductive film, transparent conductive substrate and device using the same

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