JP2005179129A - Conductive titanium oxide sintered compact, sputtering target, translucent member, and image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problems, such as stability of a sputter rate and the degradation in refractive index with visible light while a method of obtaining conductivity by firing a titanium oxide compact to be sintered in a nonoxidizing atmosphere to give rise to an oxygen defect and a method of adding indium oxide, zinc oxide, etc., as dopants to the titanium oxide compact to be sintered and subjecting the same to oxidation firing are devised as a method for manufacturing the conductive titanium oxide sintered compact. <P>SOLUTION: The conductive titanium oxide sintered compact containing titanium oxide as a principal component and containing at least one kind selected from niobium oxide and tantalum oxide as a dopant contains at least one kind selected from indium oxide, tin oxide, zinc oxide, gallium oxide, and aluminum oxide. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a conductive titanium oxide sintered body, a sputtering target using the same, an antireflection film formed using the same, a translucent member formed therewith, and an image display apparatus using the same. .

  In recent years, conductive titanium oxide sintered bodies have come to be used for sputtering targets having a rapid film forming speed due to the demand for an increased production system of new-type image display devices such as liquid crystal displays. A sputtering target refers to a member used in a sputtering apparatus for forming a thin film, and the material of the sputtering target is directly used as the material of the thin film. This thin film is produced on the surface of a substrate and used for various applications. Among these, a thin film of titanium oxide is used for an antireflection film or the like. In particular, translucent members in which an antireflection film is formed on glass or transparent resin are used in a wide range of fields such as liquid crystal modules.

  Here, as a method for producing a conductive titanium oxide sintered body, a method is known in which conductivity is obtained by firing titanium dioxide powder in a non-oxidizing atmosphere to generate oxygen defects (see Patent Document 1).

  In addition, a method has been devised in which indium oxide, zinc oxide or the like is added to titanium dioxide as a dopant and baked (see Patent Document 2).

Furthermore, as another method for producing a conductive titanium oxide sintered body, a method of obtaining conductivity by adding niobium oxide to titanium oxide and baking it has been devised (see Patent Document 3).
JP-A-7-233469 JP 2003-73820 A JP 2001-58871 A

  However, when the conductive sintered body obtained by the method proposed in Patent Document 1 is used as a sputtering target, the surface of the sputtering target is oxidized in use in the presence of oxygen, and the sputtering rate is lowered, so that it is stable. There was a problem that it was difficult to obtain film forming conditions. Further, when forming a film on a large substrate, there is a problem that unevenness of color occurs in the formed thin film due to the concentration distribution of oxygen introduced into the sputtering apparatus. This is an unavoidable problem as long as the sputtering target is manufactured by reduction firing, and optimization of the film forming conditions and a device in the sputtering apparatus are required.

  Further, since the dopant used in the conductive titanium oxide sintered body proposed in Patent Document 2 has a lower visible light transmittance than that of the titanium oxide thin film, even if it is a target that can be sputtered by direct current, it is oxidized. There has been a problem that the refractive index of a thin film containing a dopant in titanium is significantly lower than that of a titanium oxide alone. Further, the purpose of forming a titanium oxide thin film by sputtering is mainly an antireflection film. The antireflection film is generally produced by laminating a silica thin film and a titanium oxide thin film. At this time, if the refractive index of the titanium oxide portion is low, the number of laminations increases, leading to an increase in manufacturing cost.

  On the other hand, the manufacturing method of the conductive titanium oxide sintered body proposed in Patent Document 3 takes a method of firing in an oxidizing atmosphere, and the sputtering rate due to oxidation of the surface of the conductive titanium oxide sintered body is taken. It is excellent in that there is no color drop or unevenness in film formation on a large substrate. However, in order to further increase the sputtering rate, it is necessary to devise a technique for reducing the resistance of the sputtering target.

  In view of the above problems, the conductive titanium oxide sintered body of the present invention contains titanium oxide as a main component, contains at least one dopant of niobium oxide or tantalum oxide, and further contains indium oxide, tin oxide, zinc oxide, It contains at least one selected from gallium oxide and aluminum oxide.

  In the conductive titanium oxide sintered body of the present invention, titanium oxide is 92.0 to 99.0% by weight, at least one selected from niobium oxide or tantalum oxide is 1.0 to 5.0% by weight, oxidized It contains 0.01 to 3.0% by weight of at least one selected from indium, tin oxide, gallium oxide, zinc oxide, and aluminum oxide.

  In addition, the conductive titanium oxide sintered body of the present invention is characterized by having a line resistance value of less than 10Ω.

  The sputtering target of the present invention is characterized by using the above-mentioned conductive titanium oxide sintered body.

  The translucent member of the present invention is characterized in that an antireflection film is formed on a substrate made of resin, glass, single crystal, or ceramics using the above sputtering target. The translucency here refers to a characteristic capable of transmitting visible light.

  The image display apparatus of the present invention is characterized by using the above-described translucent member.

  The conductive titanium oxide sintered body of the present invention is a conductive titanium oxide sintered body containing titanium oxide as a main component and at least one selected from niobium oxide or tantalum oxide as a dopant. Since at least one selected from zinc, gallium oxide, and aluminum oxide is included, the line resistance value can be reduced.

  In particular, titanium oxide is 92.0 to 99.0 wt%, at least one selected from niobium oxide or tantalum oxide is 1.0 to 5.0 wt%, indium oxide, tin oxide, zinc oxide, gallium oxide, oxidation By including 0.01 to 3.0% by weight of at least one selected from aluminum, the wire resistance value of the conductive titanium oxide sintered body can be reduced and stabilized.

  Moreover, since the wire resistance value of the conductive titanium oxide sintered body is less than 10Ω, it can be used in a DC sputtering apparatus as a sputtering target, and film formation at a lower cost becomes possible.

  Further, since the conductive titanium oxide sintered body of the present invention is composed mainly of titanium dioxide, a target such as that found in Patent Document 1 or a sputtering target using titanium metal during the operation of the sputtering apparatus. Sputtering rate does not decrease due to surface oxidation.

  Further, since the antireflection film formed by the sputtering target of the present invention does not cause color unevenness, a special apparatus for controlling the oxygen concentration in the sputtering apparatus is not necessary. Therefore, it can greatly contribute to the improvement of product yield and the reduction of manufacturing equipment costs.

  In addition, since the translucent member made of resin, glass, single crystal, or ceramic formed with the antireflection film of the present invention uses niobium oxide or tantalum oxide as a dopant, the refractive index of the thin film with visible light is low. Since the thickness of the antireflection film can be reduced and the number of laminations with other materials can be reduced, not only does the light transmissivity be impaired, but it can greatly contribute to cost reduction such as process reduction.

  In addition, since the image display device using the translucent member of the present invention is excellent in translucency and has no color unevenness, a clear image can be displayed.

  The conductive titanium oxide sintered body of the present invention contains titanium oxide as a main component, contains at least one kind of niobium oxide or tantalum oxide as a dopant, and is selected from indium oxide, tin oxide, zinc oxide, gallium oxide, and aluminum oxide. It includes at least one kind.

  The conductive titanium oxide sintered body of the present invention can reduce the line resistance value by including the above-mentioned additives other than the dopant as compared with the addition of only the dopant. When the firing temperature exceeds a certain level, niobium oxide or tantalum oxide is liberated from the solid solution of titanium oxide and the dopant niobium oxide or tantalum oxide and segregates at the crystal grain boundaries, so that the line resistance value of the porcelain itself increases. Indium oxide, tin oxide, zinc oxide, and gallium oxide are generally known as conductive oxides, and have the function of reducing the resistance of grain boundaries that have become high resistance by dispersing them in the crystal grain size. In addition, aluminum oxide has a function of reducing resistance by forming a solid solution with niobium oxide or tantalum oxide segregated at grain boundaries.

  Therefore, by including indium oxide, tin oxide, zinc oxide, gallium oxide, aluminum oxide, and the like, a small resistance value can be maintained even when fired in a wide temperature range.

  Moreover, the dopant here is a substance that develops conductivity when added to the main component.

  Furthermore, in the conductive titanium oxide sintered body of the present invention, titanium oxide is 92.0 to 99.0 wt%, at least one of niobium oxide or tantalum oxide is 1.0 to 5.0 wt%, indium oxide, It is preferable to contain 0.01 to 3.0% by weight of at least one of tin oxide, zinc oxide, gallium oxide, and aluminum oxide.

  By using a high refractive index dopant, even if a low refractive index component other than the dopant is added, the refractive index of visible light of the titanium oxide thin film that is the final form is not significantly reduced. Additives other than the dopant have a lower refractive index when the addition amount is smaller than the dopant.

  As the amount of the additive other than the dopant increases, the line resistance of the conductive titanium oxide decreases. However, an amount smaller than this is preferable because it gradually approaches a constant value around 3.0% by weight.

  When indium oxide, zinc oxide, aluminum oxide, gallium oxide, antimony oxide, zirconium oxide, etc. are used as dopants, these dopants have a lower refractive index than titanium oxide, so when forming the final form of titanium oxide thin film The refractive index of the thin film in visible light is significantly lower than that of titanium oxide alone.

  The grain size of the conductive titanium oxide sintered body of the present invention is preferably 10 μm or less. This is because the wire resistance value increases when the thickness exceeds 10 μm.

  Further, the distance between crystal grains of the conductive titanium oxide sintered body of the present invention is preferably 0.2 μm or less. This is because the grain boundary resistance increases and the linear resistance value of the sintered body increases when the value is larger than this.

  The porosity of the conductive titanium oxide sintered body of the present invention is preferably 0.1% or less. If the porosity exceeds 0.1%, variations in the line resistance between the inside and the surface of the sintered body occur. Variation in wire resistance value must be avoided because it greatly affects rate fluctuations during sputtering operation.

The sintered density of the conductive titanium oxide sintered body of the present invention is preferably 4.2 g / cm ³ or more.

This is because the line resistance value increases when the ratio is less than this range.

  The bending strength of the conductive titanium oxide sintered body of the present invention is preferably 155 MPa or more.

If it is less than this, it will lead to cracking of porcelain and generation of dust during the sputtering operation.

  The crystal structure of the conductive titanium oxide sintered body of the present invention is preferably rutile. This is to prevent cracks due to crystal transition during the sputtering operation.

  In addition, the maximum pulverized particle size at the time of producing the conductive titanium oxide sintered body of the present invention is desirably 5 μm or less. This is because when unmilled particles larger than this remain, the dispersibility between the titanium oxide and the dopant deteriorates, and high resistance titanium oxide that causes nodules is partially generated.

  Moreover, as for the sintering temperature at the time of manufacture of the electroconductive titanium oxide sintered compact of this invention, 1200 to 1600 degreeC is preferable. This is because a preferable sintered density cannot be obtained at 1200 ° C. or lower, and segregation of the dopant to the crystal grain boundary is promoted at 1600 ° C. or higher, resulting in an increase in the line resistance value.

  Moreover, it is preferable that the temperature increase rate of firing during the production of the conductive titanium oxide sintered body of the present invention is 50 ° C./h or more. This is because the faster the heating rate, the smaller the particle size can be controlled.

  Further, the temperature lowering speed of the firing at the time of producing the conductive titanium oxide sintered body of the present invention is preferably 35 ° C./h or less. If it exceeds this, abnormal crystal grain growth occurs, leading to a decrease in density and an increase in line resistance.

  In addition, examples of the crystal structure of titanium oxide used in the present invention include anatase, rutile, brookite, etc., but those containing rutile as a main component are used from the viewpoint of cracks and cost of the sintered body due to crystal dislocation during firing. It is preferable. In addition, the average particle diameter includes those containing coarse particles of 10 μm or more to fine powders of 5 μm or less, but those having a particle diameter of 2 μm or less are preferably used because of problems such as dispersibility with dopants and manufacturing problems. . Further, the purity is from a low purity of 99.5% or less to a high purity of 99.99% or more. In the state of the thin film in the final form, it is preferable to use a material having a purity of 99.9% or more because problems such as a significant reduction in light transmission due to visible light absorption of impurities occur.

  In the present invention, the content of niobium oxide and tantalum oxide is set to 1.0 to 5.0% by weight. Within this range, the wire resistance value takes a minimum value, and if it is 5.0% by weight or more, the conductivity is improved. The effect is thin and the resistance value is rather increased. More preferably, it is 2.0 to 3.0% by weight.

Further, niobium oxide used in the present invention is _{NbO, NbO 2, Nb 2 O} 3, Nb 2 but O ₅ and the like, the stability of the crystals, it is preferable to use a Nb ₂ O ₅ in terms of price. For the same reason as titanium oxide, it is preferable to use one having an average particle size of 2 μm or less and a purity of 99.9% or more.

Further, examples of the tantalum oxide used in the present invention include TaO ₂ , Ta ₂ O ₃ and Ta ₂ O _5, but Ta ₂ O ₅ is preferably used in terms of crystal stability and cost. For the same reason as titanium oxide, it is preferable to use one having an average particle size of 2 μm or less and a purity of 99.9% or more.

  The content of at least one of the additives indium oxide, tin oxide, zinc oxide, gallium oxide, and aluminum oxide is set to 0.01 to 3.0% by weight, but less than 0.01% compared to the dopant alone There is almost no difference in the value of the line resistance, and when it is 3.0% by weight or more, the refractive index of visible light of the titanium oxide thin film which is the final form becomes small. More preferably, it is 1.0 to 2.0% by weight.

  The indium oxide used in the present invention is preferably one having an average particle size of 2 μm or less and a purity of 99.9% or more for the same reason as titanium oxide in terms of both average particle size and purity.

In addition, examples of the tin oxide used in the present invention include SnO and SnO _2, but it is preferable to use SnO ₂ in terms of crystal stability and cost. For the same reason as titanium oxide, it is preferable to use one having an average particle size of 2 μm or less and a purity of 99.9% or more.

  The zinc oxide used in the present invention is preferably one having an average particle size of 2 μm or less and a purity of 99.9% or more for the same reason as titanium oxide in terms of both average particle size and purity.

Examples of the gallium oxide used in the present invention include Ga ₂ O and Ga ₂ O _3, but Ga ₂ O ₃ is preferably used in terms of crystal stability and cost. For the same reason as titanium oxide, it is preferable to use one having an average particle size of 2 μm or less and a purity of 99.9% or more.

Examples of the aluminum oxide used in the present invention include α-Al ₂ O ₃ and γ-Al ₂ O ₃ , and α-Al ₂ O ₃ is preferably used from the viewpoint of crystal stability. For the same reason as titanium oxide in terms of both average particle size and purity, it is preferable to use one having an average particle size of 2 μm or less and a purity of 99.9% or more.

  Further, the line resistance value of the conductive titanium oxide sintered body of the present invention is preferably 10Ω or less, and when it is larger than 10Ω, when used as a direct current sputtering target, an increase in applied voltage at the start of operation occurs. This is because the porcelain is damaged immediately after the discharge, or the sputtering rate is remarkably lowered because the current hardly flows. More preferably, it is 5Ω or less.

  The conductive titanium oxide sintered body of the present invention has a rectangular plate shape or disk shape, and has a variety of sizes, but a thickness of about 10 mm. The surface of the porcelain after firing is higher in resistance than the inside because it is contaminated with impurities in the furnace. By removing the outermost surface by polishing treatment, a conductive porcelain having a smaller line resistance value can be obtained. The line resistance value is obtained by measuring the surface of the porcelain after the polishing treatment. The wire resistance of the conductive titanium oxide sintered body of the present invention was measured according to the four-end needle method (JIS R1637).

  Here, an embodiment in which the conductive titanium oxide sintered body of the present invention is used as a sputtering target will be described with reference to FIG. The counter electrode 3 (sputtering target (cathode) 3a, anode 3b) is disposed in the vacuum chamber 6, and the gas in the vacuum chamber 6 is sucked from the gas suction port 1 to make a vacuum. When a discharge gas is supplied from the gas inlet 2 while applying a voltage, the discharge gas generates glow discharge and generates plasma. The generated plasma is accelerated in the electric field and collides with the surface of the sputtering target (cathode) 3a. With this energy, surface atoms of the sputtering target (cathode) 3a are released into a vacuum and deposited on the substrate 5 of the anode 3b to form a thin film. When the conductive titanium oxide sintered body of the present invention is used for the sputtering target (cathode) 3a, a stable sputtering rate can be obtained, and a titanium oxide thin film having a high refractive index with visible light can be obtained on the substrate.

  Usually, in order to form a titanium oxide thin film, it is the mainstream to use metal titanium as the sputtering target (cathode) 3a. In this case, in order to form a titanium oxide thin film on the sputtering target, it is necessary to input a relatively large amount of oxygen. Therefore, there is a problem that the sputtering rate is small, the surface of the titanium metal is oxidized during operation, and the sputtering rate changes with time, and the sputtering rate gradually decreases. However, when the conductive titanium oxide sintered body of the present invention is used as a sputtering target, since oxygen is already contained in the target, it is not only necessary to introduce a small amount of oxygen, but also sputtering due to surface oxidation. There is almost no drop in rate. Furthermore, color unevenness does not occur because the oxygen concentration distribution in the vicinity of the sputtering target such as the substrate 5 is small.

  Here, the sputtering apparatus that can use the conductive titanium oxide sintered body of the present invention uses a DC power source, and uses a permanent magnet or an electromagnet as a cathode for increasing the sputtering efficiency and for other effects. Includes DC magnetron sputtering equipment.

  Next, an embodiment of the antireflection film using the titanium oxide film of the present invention will be described with reference to FIG. A titanium oxide thin film 7 and a silica thin film 8 are alternately laminated on the substrate 5 by sputtering to form an antireflection film. The substrate 5 is generally required to have translucency, and resin, glass, single crystal substrate, ceramic substrate, or the like is used. The translucency here means a property of transmitting visible light having a wavelength of 380 nm to 760 nm.

  The antireflection film 4 produced by the sputtering target of the present invention has a feature that there is no color unevenness. When metal titanium is used as a sputtering target as described above, it is necessary to introduce a large amount of oxygen in order to form a titanium oxide film. Since the inside of the sputtering apparatus is depressurized to a vacuum and it is difficult to make the oxygen concentration uniform by convection, an oxygen concentration distribution is generated depending on the distance from the oxygen inlet. A non-stoichiometric oxide is formed in a part of the thin film formed due to this concentration distribution. Since this non-stoichiometric oxide has an extremely low light transmittance, color unevenness that appears to be gray even with the naked eye is generated.

  Furthermore, the translucent member using the antireflection film of the present invention will be described. Since the translucent member formed with the antireflection film of the present invention uses a highly refractive material as a dopant, the translucent member can be thinned and the number of lamination with other materials can be reduced, so that it has excellent translucency. ing. Here, the translucent member is a ceramic substrate such as translucent alumina or translucent YAG, a single crystal substrate such as sapphire, a resin or glass substrate used for a liquid crystal display or a plasma display, a protective cap for a lens or a light emitting diode. This refers to all parts that transmit visible light other than the substrate. In particular, the recent development of liquid crystal displays and plasma displays is remarkable, and large products are being developed one after another. Since translucency is an important property related to brightness, color unevenness during sputtering is more noticeable when forming a film on a large substrate, simplifying the manufacturing equipment for large screen displays, It can contribute to yield improvement.

  Next, an embodiment of an image display device using the translucent member of the present invention will be described with reference to FIG. FIG. 3 is a schematic cross-sectional view of a transmissive liquid crystal image device. The entire structure is sandwiched between the translucent members 9. The transparent electrode 10 is an electrode for driving the liquid crystal display. The alignment film 11 functions to align liquid crystal molecules in a certain direction. The liquid crystal filling portion 12 is shaped to be sandwiched between the alignment films 11 and is composed of a component called a spacer and a liquid crystal for ensuring a uniform gap. The color filter 13 displays colors by applying an RGB filter. The backlight 14 irradiates light from behind the display to brighten the screen. When the translucent member of the present invention is used, not only the reflection of external light on the display can be reduced, but also the light from the backlight 14 can be transmitted without waste, so that a clear image can be displayed. it can.

  Below, the manufacturing method of the electroconductive titanium oxide sintered compact and sputtering target of this invention is demonstrated. The conductive titanium oxide sintered body is a process in which a starting material composed of titanium oxide is mixed with a doping material, other additives, a solvent such as water and pulverized by a mill, and a slurry whose particle size is adjusted is mixed with a binder. A step of drying and granulating with a spray dryer, a step of molding the dried granulated powder using a technique such as uniaxial pressure molding or isostatic pressing, a step of firing the molded body in an oxidizing atmosphere, Manufactured through a process of polishing the surface of porcelain and adjusting the dimensions. In order to prevent an increase in impurities due to media wear during the pulverization process, the primary raw material preferably has a particle size of 2 μm or less. The type of mill, media type, etc. must be carefully selected to prevent contamination.

  The sputtering target is further manufactured by bonding the conductive titanium oxide sintered body to a metal member called a backing plate using a wax material. If there is a space between the conductive titanium oxide sintered body and the backing plate, the conductivity is lowered, and the sputter rate is adversely affected, so it must be carefully joined.

  First, the linear resistance value of the conductive titanium oxide sintered body produced only with titanium oxide, niobium oxide, and tantalum oxide and the refractive index of the obtained titanium oxide thin film were evaluated.

First, titanium oxide, niobium oxide (Nb ₂ O ₅ ), and tantalum oxide (Ta ₂ O ₅ ) were prepared and prepared so as to have the compositions shown in document numbers 1 to 13 in Table 1. Next, the mixture was mixed and pulverized by a wet method using a ball mill together with a solvent, and after adjusting the particle diameter, an organic binder was further added to prepare a slurry. The obtained slurry was dried by spray drying to produce granules for a molded body. Further, a substrate-shaped molded body was produced from the granules by uniaxial pressure molding, and was fired in the presence of oxygen. Thereafter, the obtained sintered body was subjected to surface polishing with a polishing machine to obtain a conductive titanium oxide sintered body. The wire resistance value was obtained by measuring the surface of the conductive titanium oxide sintered body thus obtained.

  Furthermore, the conductive titanium oxide sintered body obtained above was bonded to a backing plate to obtain a sputtering target. Using these sputtering targets, a titanium oxide thin film was formed on the surface of the glass substrate by direct current sputtering. The sputtering conditions were an electric power of 1000 W, a pressure of 0.3 Pa, and an oxygen concentration of 3%. Since the titanium oxide target containing no dopant of sample number 1 has no conductivity, a titanium oxide thin film was formed on the surface of the glass substrate by RF sputtering. The refractive index of the titanium oxide thin film thus obtained was measured with an ellipsometer. The measured value used the refractive index of wavelength 550nm.

  Evaluation results of the conductive titanium oxide sintered body thus obtained are shown in Table 1 and FIG.

When the dopant is either niobium oxide or tantalum oxide, the line resistance shows a minimum value in the vicinity of 2.5% by weight added, and further, the amount of dopant added is between 2.0 and 3.0% by weight. The wire resistance value is small and stable.

  Subsequently, the linear resistance value and refractive index of the conductive titanium oxide sintered body produced by adding niobium oxide and tantalum oxide as dopants to titanium oxide and further adding additives were evaluated. The produced samples are sample numbers 14 to 38.

Additives other than the dopant are In ₂ O ₃ , SnO ₂ , ZnO, Ga ₂ O ₃ , Al ₂ O ₃ , and the addition amounts are approximately 0.01 wt%, 0.5 wt%, 1.0 wt%, respectively. 2.0 wt% and 3.0 wt%. The obtained results are shown in FIGS.

  FIG. 5 shows that the line resistance value decreases as the additive is increased. Moreover, it has converged in the vicinity of 2.0 to 3.0% by weight, and the addition amount in the vicinity is considered optimal.

  Further, as shown in FIG. 6, the refractive index tends to decrease as the addition amount increases, but there is no extreme decrease.

That is, when comparing the sample numbers 14 to 38 and the sample numbers 1 to 13 of the present invention, additives other than the dopants In ₂ O ₃ and SnO _{2 in the} vicinity of 2.5% by weight of the dopant amount with the smallest line resistance value. , _{ZnO, Ga} 2 O 3, line resistance value of the conductive titanium oxide sintered body by adding in a range of 0.01 to 3.0 wt% of the scope of the present invention the _Al 2 _{O 3} is further lowered, the glass substrate The refractive index of the titanium oxide thin film obtained above is not drastically reduced.

It is sectional drawing which shows one Embodiment of the DC power source sputtering device using the sputtering target which consists of an electroconductive titanium oxide sintered compact concerning this invention. It is sectional drawing which shows embodiment of the translucent member which concerns on this invention. It is sectional drawing which shows embodiment of the image display apparatus which concerns on this invention. It is a graph which shows the line resistance of a comparative example. It is a graph which shows the line resistance of an Example of this invention. It is a graph which shows the refractive index of this invention Example.

Explanation of symbols

1: Gas suction port 2: Gas introduction port 3a: Sputtering target (cathode)
3b: Anode 4: Antireflection film 5: Substrate 6: Vacuum chamber 7: Titanium oxide thin film 8: Silica thin film 9: Translucent member 10: Transparent electrode 11: Alignment film 12: Liquid crystal filling part 13: Color filter 14: Back Light (light source)

Claims (6)

It contains titanium oxide as a main component, contains at least one selected from niobium oxide or tantalum oxide as a dopant, and further contains at least one selected from indium oxide, tin oxide, zinc oxide, gallium oxide, and aluminum oxide. Conductive titanium oxide sintered body. Titanium oxide is 92.0-99.0 wt%, at least one selected from niobium oxide or tantalum oxide is 1.0-5.0 wt%, indium oxide, tin oxide, zinc oxide, gallium oxide, aluminum oxide The conductive titanium oxide sintered body according to claim 1, comprising at least one selected from 0.01 to 3.0% by weight. The conductive titanium oxide sintered body according to claim 1, wherein the wire resistance value is less than 10Ω. A sputtering target using the conductive titanium oxide sintered body according to any one of claims 1 to 3. A translucent member obtained by laminating a titanium oxide thin film formed using the sputtering target according to claim 4 on a resin, glass, single crystal, or ceramic substrate. An image display device using the translucent member according to claim 5.

Images