TW510002B - Wire bonding method - Google Patents

Wire bonding method Download PDF

Info

Publication number
TW510002B
TW510002B TW088113514A TW88113514A TW510002B TW 510002 B TW510002 B TW 510002B TW 088113514 A TW088113514 A TW 088113514A TW 88113514 A TW88113514 A TW 88113514A TW 510002 B TW510002 B TW 510002B
Authority
TW
Taiwan
Prior art keywords
capillary
point
lead
bonding
bonding point
Prior art date
Application number
TW088113514A
Other languages
English (en)
Inventor
Shinichi Nishiura
Nobuo Takeuchi
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Application granted granted Critical
Publication of TW510002B publication Critical patent/TW510002B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Description

510002 A7 B7 五、發明說明（j ) [技術領域] 本發明係關於使用毛細管，以插通於毛細管之引線連 接於第1結合點及第2結合點間之引線結合方法，特別是 關於第1結合點及第2結合點間之高低差較小之低高低差 元件中，適合形成低引線弧形之引線結合方法。 [習知技術] 引線結合方法中有提出各種方法，第7圖中顯示最爲 一般之方法。如第7圖（a)所示的，用以挾持引線i、位於 毛細管2上方之夾具(未圖示)呈開狀態，毛細管2下降將 自毛細管2前端突出之引線前端所形成之球部結合於第1 結合點A。之後，毛細管2邊上昇至B點邊放出形成引線 弧形所需引線長度之引線1。其次，夾具關閉，毛細管2 進行圓弧運動以移動至第2結合點C之上方的D點。接著 ，如第7圖（b)所示，毛細管2下降將引線1結合於第2結 合點C。之後，夾具打開，毛細管2及夾具一起上昇，在 此上昇途中夾具關閉，自第2結合點C之根部切斷引線1 。至此，結束一根引線結合。又，作爲此種引線結合方法 ，例如有日本特公平1-2653 1號公報。 [發明欲解決之課題] 習.知之引線結合方法，第1結合點A與第2結合點C 間之高低差較小，例如在50μιη以下之低高低差元件中， 有下述之問題。如圖7(a)所示，在毛細管2僅些微的移動 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----一--I ^-------裝--- (請先閱讀背面之注意事填寫本頁) 訂-· 經濟部智慧財產局員工消費合作社印製 510002
五、發明說明（>) 至第2結合點C上方之情形時，自毛細管2下方垂下多餘 的引線1，成爲形成有彎曲部10之引線形狀11。因形成此 彎曲部10，使得自毛細管2伸出之引線長度，較以圖7(a) 之2點鏈線所示之引線形狀12的理想引線長度長。由於此 多餘之引線1，在結合於第2結合點C時，引線1將因塑 性變形而引起斥力。其結果，成爲如第7圖（b)所示之形成 向上方膨起之引線形狀13。又，第7圖（b)之2點鏈線所示 之引線形狀19，係理想之引線形狀。 如上述般，在原本以第1結合點A之上部14爲頂點 之低引線弧形中，具膨起部之引線形狀13，不僅使得引線 弧形全體之高度變高，亦造成在弧形之形成（looping)動作 中引線高度之控制變得困難，形成不安定的引線弧形形狀 〇 本發明之課題，即係提供一在結合於第2結合點C時 ，防止引線弧形之膨起而能形成安定之引線弧形形狀，以 在低高低差元件中形成低引線弧形之引線結合方法。 [解決課題之方法] 爲解決上述課題之本發明，係一種引線結合方法，係 使用毛細管將插通於毛細管之引線連接於第1結合點與第 2結合點間，其特徵在於：將突出於毛細管前端之引線前 觸形成之球結合於桌1結合點後’毛細管移動至第2結合 點側時，首先下降至第2結合點略微靠第1結合點側，將 自毛細管前端垂下的引線部壓接於水平面，接著在毛細管 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----.--I;-------裝--- (請先閱讀背面之注意事填寫本頁) 訂·. 經濟部智慧財產局員工消费合作社印製 510002 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（j ) 上昇移動至第2結合點上方後，毛細管下降將引線結合於 第2結合點。 [發明之實施形態] 以下，藉第1圖〜第3圖說明本發明之一實施形態。 又，與第7圖相同及相當部份以同一符號加以說明。如第 1及第2圖所示，爲夾住引線位於毛細管2上方之夾具(未 圖示)係呈開狀態，而毛細管2下降將突出於毛細管2前端 之引線前端形成之球結合於第1結合點A。之後，毛細管 2邊上昇至B點邊放出形成引線弧形所需之引線長度量的 引線1。 其次，夾具關閉，毛細管2進行圓弧運動自第2結合 點C略微移動至第1結合點A側之E點。此處之E點.，係 將自毛細管2前端垂下的引線部壓接於結合面等之水平面 20上面之位置。以此方向，由於壓接於水平面20之引線 部15 ’如前所述的，係自毛細管2前端垂下的引線部壓接 於水平面20之部份，故起因於壓接於水平面20之動作的 引線1之塑性變形引起之斥力，如第2圖所示，形成具膨 起之引線形狀16，且毛細管2下端部之引線部Π被折彎 向第1結合點A之方向。 其次，如第1圖及第3圖（a)所示，毛細管2上昇至ρ 點，接著如第1圖及第3圖(b)所示，移動至第2結合點c 上方之G點。藉自此F點到G點之移動拉出引線1，吸收 第2圖中所示引線形狀16之膨起，而成爲具有理想引線長 5 ^紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） " " ' " ----·---^-------裝--- (請先閱讀背面之注意事寫本頁) J1T· .線！ 00 1Χ 5 A7 —---- - B7____ 五、發明說明（士） 度之引線形狀18。接著，如第1圖及第3圖（c)所示，毛細 管2下降將引線1結合至第2結合點C。之後與習知之方 式相同的，夾具打開，毛細管2及夾具一起上昇，在此上 昇途中夾具關閉，將引線1自第2結合點之根部附近切斷 。至此，結束一根引線結合。 如上所述的，在結合至第2結合點C前，由於係將自 毛細管2下端垂下的引線1壓接於水平面20，之後使毛細 管2移動至第2結合點C上方以結合至第2結合點C，因 此如第3圖（c)所示的，得到引線弧形形狀19。此引線弧形 形狀19之全體高度，低於第1結合點A之上部14之引線 弧形高度，爲低高低差元件中之低引線弧形。 以往，引線弧形高度之最低限度爲150μιη，但根據本 實施形態則能更進一步降低至50〜150μιη。據此，能.更爲 廣泛的適用於扁平封裝設計之元件，例如光元件、記憶卡 、TQFP(Thin Quad Flat Package)等。 第4圖係顯示本發明之第2實施形態、第5圖係顯示 本發明之第3實施形態、第6圖係顯示本發明之第4實施 形態。此等實施形態，係前述實施形態中毛細管2之E點 至G點軌跡的變形例。第4圖中，毛細管2自E點上昇移 動至第2結合點C之上方的G點後，毛細管2下降將引線 1結合於第2結合點C。第5圖中，毛細管2自E點上昇 至Η點，接著上昇及下降描出圓弧I移動至第2結合點c 上方之J點後，毛細管2下降將引線1結合於第2結合點 C。第6圖中，毛細管2自Ε點上昇至F點後，斜斜的下 6 ^張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " ' --
(請先閱讀背面之注意事Z 丨裝--- 曹填寫本頁) 經濟部智慧財產局員工消費合作社印製 510002 A7 B7 五、發明說明（<) 降至第2結合點C將引線i結合於第2結合點c。 以此種方式’毛細管2自E點到C點之軌跡，吸收如 第2圖所不引線形狀16之膨起，成爲如第3圖（c)所示之 引線弧形形狀19。因此，只要是能達成此目的之軌跡皆可 ，並不限定於圖示之實施形態。 又’自第1結合點A到E點之毛細管2的軌跡本身， 由於並非本發明之要旨，因此採用各種毛細管軌跡皆可。 例如，日本特公平5_6〇657號公報所示般，在結合至第i 結合點後，使毛細管上昇，接著使之移向第2結合點之反 方向’亦即進行所謂之反向動作亦可。再者，水平面亦不 限定於平面狀’只要是壓接引線1而能在上方形成膨起， 任何形狀皆可。 [發明之效果] 根據本發明，由於係將自毛細管前端突出的引線前端 形成之球結合於第1結合點後，在毛細管移動至第2結合 點側時，首先下降至第2結合點略微靠第1結合點側，將 自毛細管前端垂下的引線部壓於水平面，其次毛細管上昇 及移動至第2結合點上方後，毛細管下降將引線結合於第 2結合點，因此能防止結合於第2結合點時引線弧形之膨 起以維持安定的引線弧形形狀，使低高低差元件中之低弓丨 線弧形成爲可能。 [圖式之簡單說明] 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注事填寫本頁) •裝 經濟部智慧財產局員工消費合作社印製 510002 A7 五、發明說明) 第1圖係顯示本發明引線結合方法之一實施形態的毛 細管軌跡圖。 第2圖係顯示本發明引線結合方法之步驟的說明圖。 第3圖之（a)(b)(c)係顯示第2圖之步驟之後續歩驟的 說明圖。 第4圖係顯示本發明引線結合方法之第2實施形態之 主要部位的毛細管軌跡圖。 第5圖係顯示本發明引線結合方法之第3實施形態之 主要部位的毛細管軌跡圖。 第6圖係顯示本發明引線結合方法之第4實施形態之 主要部位的毛細管軌跡圖。 第7圖之(a)(b)係顯示習知之引線結合方法之步驟的說 明圖。 ----,---^-------裝--- (請先閱讀背面之注音心事填寫本頁) · 經濟部智慧財產局員工消費合作社印-t [符號說明] 1 引線 2 毛細管 15 引線部 16 引線形狀 17 引線部 18 引線形狀 19 引線弧形形狀 20 水平面 A 第1結合 8 .線- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 510002 A7 B7 經濟部智慧財產局員工消費合作社印製
----,---^---------- (請先閱讀背面之注事寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 五、發明說明（<[)B 第2結合點 •線·

Claims (1)

  1. 510002 A« B8 C8 D8 六、申請專利範圍 1 ·一種引線結合方法，係使用毛細管將插通於毛細管 之引線連接於第1結合點及第2結合點間，其特徵在於·· 將自毛細管前端突出之引線前端所形成之球結合於第1結 合點後，在毛細管移動至第2結合點側時，首先下降至第 2結合點略微靠第1結合點側，將自毛細管前端垂下的引 線部壓於水平面，其次使毛細管上昇及移動至第2結合點 上方後，再使毛細管下降將引線結合至第2結合點。 (請先閱讀背面之注意事項寫本頁) 裝 、1T 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）
TW088113514A 1998-09-07 1999-08-07 Wire bonding method TW510002B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10251701A JP2000082717A (ja) 1998-09-07 1998-09-07 ワイヤボンディング方法

Publications (1)

Publication Number Publication Date
TW510002B true TW510002B (en) 2002-11-11

Family

ID=17226725

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088113514A TW510002B (en) 1998-09-07 1999-08-07 Wire bonding method

Country Status (4)

Country Link
US (1) US6182885B1 (zh)
JP (1) JP2000082717A (zh)
KR (1) KR100317698B1 (zh)
TW (1) TW510002B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494042B2 (en) * 2003-10-02 2009-02-24 Asm Technology Singapore Pte. Ltd. Method of forming low wire loops and wire loops formed using the method
JP2005159267A (ja) * 2003-10-30 2005-06-16 Shinkawa Ltd 半導体装置及びワイヤボンディング方法
US7347352B2 (en) * 2003-11-26 2008-03-25 Kulicke And Soffa Industries, Inc. Low loop height ball bonding method and apparatus
TWI248186B (en) * 2004-01-09 2006-01-21 Unaxis Internat Tranding Ltd Method for producing a wedge-wedge wire connection
US20060011710A1 (en) * 2004-07-13 2006-01-19 Asm Technology Singapore Pte Ltd Formation of a wire bond with enhanced pull
JP4530975B2 (ja) 2005-11-14 2010-08-25 株式会社新川 ワイヤボンディング方法
JP4787374B2 (ja) * 2010-01-27 2011-10-05 株式会社新川 半導体装置の製造方法並びにワイヤボンディング装置
JP2013038257A (ja) * 2011-08-09 2013-02-21 Toshiba Corp ワイヤボンディング装置および半導体装置の製造方法
JP6002461B2 (ja) * 2011-08-26 2016-10-05 ローム株式会社 半導体装置および電子デバイス
JP2013143447A (ja) * 2012-01-10 2013-07-22 Toshiba Corp 半導体装置の製造方法およびボンディング装置
TWI543284B (zh) * 2014-02-10 2016-07-21 新川股份有限公司 半導體裝置的製造方法以及打線裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643321A (en) * 1970-06-17 1972-02-22 Kulicke & Soffa Ind Inc Method and apparatus for tailless wire bonding
JPS6281738A (ja) * 1985-10-07 1987-04-15 Hitachi Micro Comput Eng Ltd リ−ドフレ−ムおよびそれを用いた半導体装置
JPH0228587B2 (ja) 1987-07-22 1990-06-25 Nippon Light Metal Co Shibosankuroraidonoseizohoho
ATE109387T1 (de) * 1988-02-23 1994-08-15 F&K Delvotec Bondtechnik Gmbh Vorrichtung und verfahren zur gesteuerten zuführung eines bonddrahtes zum wedge oder zur kapillare eines bondkopfes.
JP2530224B2 (ja) * 1989-05-15 1996-09-04 株式会社新川 ワイヤボンデイング方法
JPH0560657A (ja) 1991-09-02 1993-03-12 Nippon Seiko Kk 複列玉軸受の外輪軌道のピツチを測定する装置
US5111989A (en) * 1991-09-26 1992-05-12 Kulicke And Soffa Investments, Inc. Method of making low profile fine wire interconnections
JP3230691B2 (ja) * 1992-03-31 2001-11-19 芝浦メカトロニクス株式会社 ワイヤボンディング方法
JP3124653B2 (ja) * 1993-04-26 2001-01-15 株式会社カイジョー ワイヤボンディング方法
US5437405A (en) * 1994-08-22 1995-08-01 National Semiconductor Corporation Method and apparatus for stitch bonding of wires to integrated circuit bonding pads
JP3400269B2 (ja) 1996-10-17 2003-04-28 株式会社新川 ワイヤボンディングにおけるボール形成装置

Also Published As

Publication number Publication date
JP2000082717A (ja) 2000-03-21
US6182885B1 (en) 2001-02-06
KR20000022851A (ko) 2000-04-25
KR100317698B1 (ko) 2001-12-22

Similar Documents

Publication Publication Date Title
TW510002B (en) Wire bonding method
TW419763B (en) Wire bonding method
KR100274137B1 (ko) 반도체장치및와이어본딩방법
TWI358096B (zh)
KR100393454B1 (ko) 핀 형상 와이어등의 형성방법
US6222274B1 (en) Bonding wire loop shape for a semiconductor device
US20060151579A1 (en) Wire loop, semiconductor device having same and wire bonding method
KR960000697B1 (ko) 와이어 본딩방법
JP2007512714A (ja) 低いループ高さのボールボンディング方法およびその装置
US5961029A (en) Wire bonding method
TW407327B (en) Wire bonding method
JP3333413B2 (ja) ワイヤボンディング方法
TW490777B (en) Wire-bonding device
TW413876B (en) Wire bonding method
JP3400287B2 (ja) ワイヤボンディング方法
JP4369401B2 (ja) ワイヤボンディング方法
TW384486B (en) Method for joining shielded wires (2)
JP2000114303A (ja) ワイヤボンディング方法
TW419760B (en) Method for forming a ball in wire bonding
US20060213956A1 (en) Method for producing a wire connection
JP2007214337A (ja) ワイヤボンディング方法および半導体装置
CN211238264U (zh) 一种防止回流焊虚焊的光敏二极管
JP3706498B2 (ja) リード線の取り出し構造
TW423087B (en) Stacked bottom lead package in semiconductor devices and fabricationg method thereof
JPH07287810A (ja) 線材巻線用ボビン

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees