TW508573B - Optical information medium - Google Patents
Optical information medium Download PDFInfo
- Publication number
- TW508573B TW508573B TW090118191A TW90118191A TW508573B TW 508573 B TW508573 B TW 508573B TW 090118191 A TW090118191 A TW 090118191A TW 90118191 A TW90118191 A TW 90118191A TW 508573 B TW508573 B TW 508573B
- Authority
- TW
- Taiwan
- Prior art keywords
- recording
- layer
- stack
- recording layer
- recording stack
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 238000002425 crystallisation Methods 0.000 claims abstract description 22
- 230000008025 crystallization Effects 0.000 claims abstract description 21
- 125000006850 spacer group Chemical group 0.000 claims abstract description 18
- 230000006911 nucleation Effects 0.000 claims abstract description 11
- 238000010899 nucleation Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 229910052787 antimony Inorganic materials 0.000 claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Chemical group 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 238000003786 synthesis reaction Methods 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910018321 SbTe Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 claims 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 24
- 239000002184 metal Substances 0.000 abstract description 24
- 239000010410 layer Substances 0.000 description 138
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 238000001816 cooling Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- -1 ZnS Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 229910017141 AlTa Inorganic materials 0.000 description 1
- 229910017150 AlTi Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003102 growth factor Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24035—Recording layers
- G11B7/24038—Multiple laminated recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25716—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing sulfur
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/20—Disc-shaped record carriers
- G11B2220/21—Disc-shaped record carriers characterised in that the disc is of read-only, rewritable, or recordable type
- G11B2220/215—Recordable discs
- G11B2220/216—Rewritable discs
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/006—Overwriting
- G11B7/0062—Overwriting strategies, e.g. recording pulse sequences with erasing level used for phase-change media
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Description
508573 A7 B7 五、發明説明(1 ) 本發明與藉由雷射光束之裝置重複寫入記錄之光資訊媒 體相關,該媒體包括具有在其侧邊配置之基板: -第一記錄堆叠,其包括相位改變型記錄層,夾在兩介 電層之間, -第二記錄堆疊,其包括相位改變型記錄層,夾在兩介 電層之間, -透明間隔物層,其介入在第一和第二記錄堆疊之間, 其具有比雷射光束之焦距之深度還大之厚度,以及 -金屬反射層,其接近第二記錄堆疊層且在遠離透明間 隔物層之第二堆疊層之側邊。 這樣之光資訊媒體從爵際專利申請書WO 99/59143 (PHN 16922)係爲已知的。該申請書描述用於單邊雙層記錄之光 資訊媒體。 以相位改變原則爲基礎之光資料•儲存係具吸引力的,因 爲其結合了直接複寫(DOW)和高儲存密度之可能性與唯 讀光學資料儲存系統之易相容性。相位改變光學記錄牵涉 使用聚焦之相對高功率雷射光束,形成次微米大小之非晶 矽記錄標記在晶矽薄膜中。在記錄資訊期間,媒體相對於 根據被記錄之資訊所調變之聚焦雷射光束移動。由於此, 冷卻發生在相位改變記錄層且導致非晶矽資訊記號形成在 1己錄層之暴露區域’其保持晶碎在未暴露區域。非晶碎記 號之拭去藉由經由以相同雷射在中間之功率準位加熱之重 新晶化而實現,而不需融化該記錄層。非晶矽記號代表資 料位元,其可以藉由低功率之聚焦雷射光束,例如經由基 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 508573 A7 B7 五、發明説明(2 板讀取。相對於記錄層之晶矽未暴露區域和非晶矽標記之 反射差異引起調變過之雷射光束,其隨後由偵測器根據記 錄之數位資訊,轉換至調變過之光電流。 其爲一目的增加光記錄媒體如DVD -可重複寫入和 DVR (數位影像錄影機)之儲存容量在一單面碟片上。此可 以藉由減少雷射光束之波長λ和/或增加記錄鏡頭之數値 孔徑(ΝΑ)而達成,因爲雷射光點之大小與(λ/ΝΑ)2成正 比。結果’當雷射光點之大小越小時,記錄之標記也就越 小。所以碟片之儲存容量增加,因爲更多標記容納在碟片 之每單位面積中。另一選擇係爲多重記錄層之應用。當使 用兩記錄層在光碟之同邊時,此可以稱爲兩倍或是雙層記 錄。當使用多於兩記錄層在光碟之同邊時,其被稱爲多重 層記錄。 對於這些新碟片來説,完全拭去•時間(CET )必須至多爲 6 0奈秒。CET定義爲在晶矽之環境下,拭去脈衝用於非 晶矽記號之完全晶化之最小期間,其係爲靜態地測量。對 於DVD -可重複寫入來説,其可能每丨2〇毫米直徑之碟片具 有4.7 GB之記錄密度,需要3 3 Μ位元/秒之使用者資料位 元速率且對於DVR-紅和-藍,其中紅和藍係指使用之雷射 光波長,該資料位元速率分別地爲3 5 Μ位元/秒和5 〇 Μ位 元/秒。每個這些資料位元速率可以轉換成一最大Cet, 其被許多參數,例如,使用之記錄堆疊和記錄層材料之熱 設計,所影響。 爲了雙層記錄,第一記錄堆疊必須有效地傳輸以確保第 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) A7 B7 2 五、發明説明(3 :記錄堆叠之合適的讀取/窝人特性。該已知的媒體具 其具I s j 1?2皿2結構於可重複寫入相位改變記錄了 22 ·層金屬,纟中第對地薄且具有高光傳 I:代ίΐ:二、’M2爲具有高光反射之鏡。1代表介電層: 、、一步之介電層Ρι,纟其上雷射光首先反射,和p 相么改變記錄層而s代表一透明間隔物層。金屬層不 只作爲:反射鏡,也作爲一散熱片以確保快速冷卻在窝^ 期間冷卻非晶矽之相位。由相同或非常相似材料所製造之 兩口己錄層p2之記錄和拭去之行爲因爲其在堆疊之位冒 而不同。Pi層存在接近於具有限制之散熱能力之相對薄= 金屬層Μ^ρ2層存在相對厚之金屬鏡層,其在記錄期 間導致P2層之重大冷卻。爲大之記錄層之冷卻行爲延長了 在記錄期間所需之雷射光寫入脈衝策略和所需之雷射光束 ^記錄速率。並且,相對薄之金屬不可避免地阻礙 雷射光之一大部分,導致減少功率在p2層。 其爲第一和第二記錄層之記錄和拭去行爲基本上不同之 已知媒體之缺點。此需要不同雷射光寫入脈衝策略和記錄 速率於每個記錄層,其導致記錄裝置變得更複雜。 本發明之目的之一係提供一種在開始段落所描述之型式 足光資訊媒體,其中以基本上對於記錄層係相等之雷射光 寫入脈衝策略和基本上對於記錄層係相等之記錄速率,達 成最佳之記錄和拭去行爲。 本目的達成在 -第一記錄堆疊,其包括由從以基本上增長控制之晶化 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂 f A7
之型式和以基本上 位改變形記錄層, -弟一 6己綠堆疊 擇之型式之相位改 成核控制之晶化之型式選擇之型式之相 以及 ’其包括型式不同於爲第一記錄堆疊選 變型記錄層。 本發明之光資訊媒體 地解釋: 之原則可以由例如下面層結構概要 ^:叫…叫叫’其中叩係爲第一記錄堆疊“以係 爲第二記錄堆疊,其中具有上述意義,M係爲金屬鏡 =而匕和P2係爲不同型式之相位改變型記錄層。在記錄和 續取期間,光記錄器之雷射光束經由第一記錄堆疊反射。 層結構在其上配置之基板可以存在相鄰於金屬層M,其中 I情況下雷射光束經由第一記錄堆疊進入而不需通過基 板,或是相鄰於第一記錄堆疊,其中之情況下,雷射光束 在通過基板層之後,經由第一記錄.堆疊進入。保護層結構 遠離環境之覆蓋層可以存在遠離基板之層結構之側邊。 本發明以下面之洞察爲基礎:藉由記錄層之材料之選 擇’記錄層之晶化動力必須與相鄰於該記錄層之層之熱和 /或光學性質符合。晶化之兩機制爲已知的:增長控制和 成核控制晶化。金屬鏡Μ之存在導致第二記綠堆疊變成相 對快之冷卻結構,因爲Μ扮演爲一散熱片,而第一記綠堆 疊係爲相對地慢之冷卻結構,因爲缺少了金屬散熱片。換 句話説,在寫入期間對於冷卻非晶矽相位係爲重要之冷卻 速率和記錄敏感性對於記錄堆疊來説係爲不同的。藉由選 擇具有基本上不同之晶化性質之記錄層,此可以被補償。 -7- 本紙張尺度適用中國國家標準(CNS) Α4规格(210 X 297公釐) 508573 A7 B7 五、發明説明(5 ) 加入相鄰於第一記錄堆疊之至少透明,且因此相對薄之金 屬層係可能的。如此之額外金屬層之散熱能力係相對地 低。所以這樣的層可以使用於微調光反射和微調第一記錄 堆疊之散熱能力。 在DOW期間,非晶矽相位記錄標記可以重新晶化之速 度決定資料速率,其與CET成反比。在新的標記可以寫入 之前,現有的標記必須完全地拭去。因此拭去或是重新晶 化可以發生之速率限制了記錄媒體之最大資料速率。第一 記錄堆疊係爲相對慢之冷卻結構且該記錄層必須薄以具有 足夠雷射光傳送至第二記錄堆疊。 當第二記錄堆疊之記錄層之相位改變材料具有成核控制 之晶化且具有相對低之CET時,第一記錄堆疊之記錄層之 相位改變材料之選擇爲具有增長控制晶化和具有相對低 CET之材料。選擇成核控制之晶化湘位改變材料可能導致 相對高之CET,因爲當層爲薄時,微晶之成核較不可能發 生。 當第二記錄堆疊具有增長控制晶化和相對低之CET之相 位改變記錄層材料時,最好選擇薄晶化成核控制之記錄層 在第一記錄堆疊中以符合在第二記錄堆疊中記錄層之行 爲。 介電層最好是ZnS和Si02之混合物,例如, (ZnS)80(SiO2)20。或者,該層可以是 Si02、Ta205、Ti02、 ZnS、Si3N4、AIN、Al2〇3、MgO、ZnO、SiC,包括其非化 學計量之合成物。特別地較偏好Si3N4、AIN、Al2〇3、 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
裝 訂 參 508573 A7 B7 五、發明説明(6 )
MgO、ZnO、SiC,因爲他們的良好熱導性。 對於金屬鏡層金屬如無、款、金、鍊、銅、銀、姥、 銘、免、鎳、姑、鏟和鉻和這些金屬之合金可以使用。合 適之合金之範例爲AlTi、AlCr和AlTa。該金屬鏡層之厚度 係不重要,但是最好傳輸率爲幾乎爲零用以獲得最大反 射。實際上,經常使用約100奈米之層,其具有零光傳輸 率且容易沉積。 在一具體實施例中,第一記錄堆疊包括從由包括Q、 銦、銻和碲,其中Q從銀和鍺之群組選出,之化合物之基 本上增長控制之晶化之型式和包括鍺、銻和碲之化合物之 基本上成核控制之晶化之型式所選擇出之型式之相位改變 型記錄層。 有用爲具基本上增長控制之晶化之記錄層爲Q、銦、銻 和碲之化合物,其中Q從銀和鍺之群組選出,且其中化合 物之原子合成由公式QaInbSbcTed所定義,其中0<a S 15, 0<bS6,55 蠭c蠭 80,16SdS35,a+b+c+d=100。 特別有用於具基本上增長控制之晶化之記錄層爲描述在 非預先出版之專利申請書EP 99202676.5 (PHN 17.599)之 化合物。在該申請書中,以原子合成描述化合物,其由公 式 QaInbSbcTed 所定義,其中 2SaS9,0<bS6,55ScS80, 16 S d S 30,a+b+c+d=100 JLQ爲ί艮或鍺。這些化合物顯示 相當快之增長控制之晶化速度。 有用爲具基本上成核控制之晶化之相位改變記錄層係爲 鍺、#和碲之化合物且其中化合物之原子合成由在三元合 -9- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) A7
成圖鍺—銻·碲中之區域所定義,該四角形形狀之區域具有 頂點:Sb3Te7、Ge2Te3、Ge3TeesbTe。 特別有用於具基本上成核控制之晶化之相位改變型記錄 層爲描述在國際專利申請書W〇 97/5〇〇84 (pHN 15.881 )之 化合物。在該申請書中,以原子合成描述化合物,其由公 式Ge^Sb^^Te^^所定義,其中〇 166蠡X $ 〇 444。這些 化合物顯示相當高之成核控制之晶化速度。 第一記綠堆疊之相位改變型記錄層具有在5和1 5奈米之 間(厚度。第一記錄堆疊之較厚之記錄層可能導致對於雷 射光太低之傳輸率。第二記錄堆疊之記錄層可以較厚,例 如,在1 0和3 5奈米之間。 透明間隔物層通常具有至少1〇微米之厚度且存在第一 和第二記錄堆疊之間。該厚度比雷射光束之焦距之深度還 大。雷射光束之焦距之深度由公式1/(2(NA)2)決定,其中 λ爲雷射光之波長而NA爲讀取/寫入物鏡鏡頭之數値孔 徑。基本上比該焦距之深度還大之透明間隔物層厚度確保 第一和第二記錄堆疊係爲光學地退耦,即是,聚焦在第一 記錄堆疊之記錄層上之雷射光束並不讀取/寫入資訊從/至 第二記錄堆疊之記錄層,反之亦然。以此方式,相對於單 層資訊媒體,儲存容量加倍。透明間隔物層之材料爲,例 如,紫外線-消除之丙酸膠黏劑或樹脂,其中伺服軌道可 由複製製程提供。 在第一記錄堆疊中,雷射光束在其上首先反射之介電 層,保護記錄層免於濕氣,保護鄰近層免於熱傷害且最佳 -10- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 508573
化光學對比。從溫差震盪之觀點來看,該介電層之厚度最 妤至少70奈米。溫差震盪係爲記錄標記之形狀之扭曲之 測量且測量爲在資訊訊號中上升和下降緣之時間偏移。從 光學對比來看,該層之厚度最好基本上相等於(7〇+λ/2η) 奈米,其中;I爲雷射光束之波長,且η係爲介電層之折射 率。在第二記錄堆疊中,在透明間隔物層和記錄層之間之 介電層因爲相同原因,具有在相同範圍内之厚度。然而, 從這些較佳値之變異係可能的。 在第一圮錄堆疊中,在記錄層和金屬鏡層之間之介電層 具有在10和50奈米間之厚度,最好在2〇和4〇奈米之間。 當該層比1 0奈米還薄,在記錄層和金屬鏡層之間之熱絕 緣就太低。結果,第二記錄層之冷卻速率增加,其導致不 良之晶化和不良之循環性。當該層比5 〇奈米厚時,在記 錄層和金屬鏡層之間之熱絕緣太高,。冷卻速率減少且因此 在寫入期間媒體之記錄層之冷卻速度減少,其阻礙非晶矽 標記之形成。 第一元錄堆疊之介電層,其存在於第_記錄層和透明間 隔物層之間’被最佳化於最大傳輸率且其厚度取決於介電 材料之折射率η。 賀訊媒體之基板包括,例如,聚碳酸酿、聚甲基丙烯酸 酯(ΡΜΜΑ)、非晶矽聚成油系烴或玻璃。在典型之範例 中’基板爲碟片形狀且具有12〇毫米之直徑和0.6或1.2 愛米之厚度。假如雷射光束經由基板之進入面進入的話, 第一記綠堆疊存在相鄰於基板且該基板至少對雷射光透 -11 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 508573 A7
^尤經由存在相鄰於第一記綠堆叠 入媒體。基板之後位在相鄰於金屬鏡。例:广 新㈣毫米半徑之數位影像錄影(跳)磲片覆:= =2:窝t和讀其因此必須具有好之光學品質怒 作,爲復盖層之合適材料良仓丨 焐給奸、 馬例如,紫外線-光線消除之聚两 埽故i假如⑽堆疊經由覆蓋層寫人 = 不需要對於雷射光是透明的。 料基板或
裝 ” 額外㈣堆#可以存在,其與第—和第二記錄堆 ::至少-額外透明間隔層隔開,該額外記錄堆疊之記錄 :係舄相位改變型且具有與雷射光窝入脈衝策略和第—和 弟一圮錄堆疊之記錄層之記錄速率相符之晶化動力。 在記錄堆疊側邊上碟片形狀基板之表面最好以可被光學 掃描之伺服㈣提供。該㈣㈣‘通常爲螺旋形狀之溝且 猎由在射入铸造或是衝壓期間之鑄造裝置形成在基板中。 ,者這些溝可以形成在重複製程中在透明間隔物層之合成 樹脂,例如,紫外線·光線消除之丙酸。 金屬鏡層和介電層已經以蒸氣沉積或濺擊提供。 相位改變記錄層已經藉由眞空沉積、電子束眞空沉積、 化學氣相沉積、離子電鍍或是賤擊應用於基板。 本發明將藉由例示之具體實施例和參考隨附之圖式,闡 述更詳細’其中圖1顯示根據本發明之光資訊媒體之概要 剖面圖。尺寸沒有按比例畫。 -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 508573 A7 ______ _B7 五、發明説明(1〇 ) iL示之具體實施例 圖1顯示藉由雷射光束1 4或1 5之裝置之可重複寫入記錄 之光資訊媒體之層結構。該媒體包括基板1。包括相位改 變型·死綠層1 0之第一記錄堆疊8存在基板之側面上。記錄 層1 〇夬在兩介電層9和1 1之間,其由例如,(ZnS)⑽(si〇2)2Q 所製造’厚度分別爲例如1 〇 〇奈米和9 〇奈米。 包括相位改變型記錄層5之第二記錄堆疊2存在。記錄 層5夾在兩介電層4和6之間,其由例如,(ZnS)⑽(si〇2)2〇所 製造,厚度分別爲例如2 5奈米和9 5奈米。 透明間隔物層7介入在第一記錄堆疊8和第二記錄堆疊2 之間’且具有比雷射光束1 4或1 5之焦距之深度還大之厚 度。透明間隔物層7可以是例如,厚度爲例如5 〇微米之紫 外線-消除之丙酸。 例如由厚度100奈米之鋁製造之金屬鏡層3存在接近於 第二記錄堆疊2且在相反於透明間隔物層7之侧邊之第二 記綠堆疊之侧邊。第一記錄堆疊8包括爲基本上增長控制 I晶化之型式或是基本上成核控制之晶化之型式之相位改 變型記錄層1〇。在該具體實施例中,第一記錄堆疊8包括 包含鍺、銻和碲之化合物之基本上成核控制之晶化之型式 之相位改變型記錄層10。適合的係爲例如,具有例如7奈 米厚度之化學計量之化合物第二記錄堆疊2包 括其型式係不同於爲第一記錄堆疊8所選擇之型式的相位 改變型記錄層5 。適合的係爲例如具原子合成 Gei.9lnaiSb68Te3〇之鍺、銦、銻和碲,具有υ奈米厚度,和 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) A7
具有基本上增長控制之晶化之化合物。 基板1係爲具有120亳米直徑和〇6亳米厚度之聚碳酸 碟片形狀之基板。 θ 由糸外線消除之樹脂Daicure SD645所製造之丨微米厚 度之復蓋層12存在相鄰於介電層11。 /己錄層5和1 〇之起始晶矽狀態係由在記錄器中之聚焦之 雷射光,束加熱沉積之非晶矽合金而獲得。 、 用於資訊之記錄、複製和拭去之雷射光束14聚焦在第 一記錄堆叠8之記錄層1 〇上且經由覆蓋層1 2進入堆疊8。 雷射光束1 5聚焦在第二記錄堆疊2之記錄層5上。 第一兒錄堆疊在非晶矽狀態下具有約6 7 %之傳輸率和在 晶矽狀態下約47%之傳輸率。第一記錄堆疊在非晶矽狀 態下約1·6 %之反射率和在晶矽狀態下約8 2 %之反射率ό 第二記錄堆疊在非晶矽狀態下約σ 9 %之有效反射率和在 晶矽狀態下約8·5 %之有效反射率。該詞有效係指可從第 一記錄堆疊,,看到”。該堆疊具有良好記錄性質。接近 4000複窝週期下,溫差震盪低於13〇/〇。 本發明提供一種可重複讀寫之相位改變光資訊媒體,例 如DVD-可重複寫入或是DVR,具有至少兩記錄層,配置 在基板之侧邊且該記錄層需要基本上相等之記錄速率和基 本上相等之雷射光寫入脈衝策略。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 508573 五
第090118191號專利申請案 中文說明書修正頁(91年8月) M B7 、發明説明(11a ) 圖式元件符號說明 1 基板 2 第二記錄堆疊 3 金屬鏡層 4,6 介電層 5, 10相位改變型記錄層 7 透明間隔物層 8 第一記錄堆疊 9, 11 介電層 12 覆蓋層 14, 15 雷射光束 -14a-本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
Claims (1)
- 508573 A8 B8 C8i.:種藉由雷射光束(14’15)之裝置之重複窝入記錄之光 '貝訊媒體,該媒體包括具有在其侧邊配置之基板⑴: -第—記錄堆疊(8),並且有.俨故你別 (; 、’ '、I相位改變型記錄層(1 〇 ), 夾在兩介電層(9,11 )之間, -第二記錄堆疊(2) ’其具有相位改變型記錄層⑺, 夾在兩介電層(4,6)之間, -透明間隔物層⑺,其介入在第_(8)和第二⑺記錄 堆疊(間,其具有比雷射光束(14, 15)之焦距之深度還 大之厚度,以及 -至屬鏡層(3),其接近於第二記錄堆疊(2)且離透明 間隔物層(7)遙遠之第二記錄堆疊(2)之側邊, 其特徵爲: _第一記錄堆疊(8),其包括由從以基本上增長控制之 晶化I型式和以基本上成核控制之晶化之型式選擇之型 式之相位改變型記錄層(10),以及 土 -第二1己錄堆疊(2),其包括型式不同於爲第_記錄堆 疊(8)選擇之型式之相位改變型記錄層(5)。 2·如申請專利範圍第1項之光資訊媒體,其特徵爲: 該第一記錄堆疊(8),其包括從由包括q、銦、鮮和 碲之化合物之基本上增長控制之晶化之型式和包括錯、 銻和碲之化合物之基本上成核控制之晶化之型式所選擇 出之型式之相位改變型記錄層(10),其中Q從銀和鍺之 群組選出。 3.如申請專利範圍第2項之光資訊媒體,其特徵爲: -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) " "" ^ --- 508573 A B c D 々、申請專利範園 Q、銦、銻和,之化合物之原子合成由公式 QaInbSbcTed 所定義,其中 〇<ag 15,〇<b $ 6,55 S c $ 80, 16SdS35 ’ a+b+c+d=100。 4·如申請專利範圍第2項之光資訊媒體,其特徵爲: 鍺、銻和碲之化合物之原子合成由在三元合成圖鍺-録-碲中之區域所定義,該四角形形狀之區域具有頂 點:Sb3Te7,Ge2Te3,Ge3Te2,和 SbTe。 5·如申請專利範圍第4項之光資訊媒體,其特徵爲: 錯、銻和碲之化合物之原子合成由公式 Ge50xSb称4〇xTe6(M〇x,且 〇166SxS〇.444所定義。 6.如申请專利範圍第i,2,3,4或5項之光資訊媒體,其 特徵爲: 琢第一記錄堆疊(8 )之相位改變型記錄層(丨〇 )具有在 5和1 5奈米之間之厚度且該第二記錄堆疊(2 )之相位改 變型《錄層(5 )具有在1 〇和35奈米之間之厚度。 7·如申請專利範圍第i項之光資訊媒體,其特徵爲:該透 明間隔物層(7)具有至少10微米之厚度。 -16·
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TWI233098B (en) * | 2000-08-31 | 2005-05-21 | Matsushita Electric Ind Co Ltd | Data recoding medium, the manufacturing method thereof, and the record reproducing method thereof |
TW583660B (en) * | 2001-01-25 | 2004-04-11 | Koninkl Philips Electronics Nv | Optical information medium and a method of manufacturing the medium |
CN1248201C (zh) * | 2001-10-02 | 2006-03-29 | 松下电器产业株式会社 | 光学信息记录方法以及再生装置 |
FR2832250A1 (fr) * | 2001-11-09 | 2003-05-16 | Commissariat Energie Atomique | Support optique a double niveau d'enregistrement |
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JP2003242643A (ja) * | 2002-02-14 | 2003-08-29 | Tdk Corp | 光記録媒体への情報記録方法、情報記録装置及び光記録媒体 |
JP3912664B2 (ja) * | 2002-02-28 | 2007-05-09 | Tdk株式会社 | 光記録媒体への情報記録方法、情報記録装置及び光記録媒体 |
US20050219991A1 (en) * | 2002-04-02 | 2005-10-06 | Koninklijke Philips Electronics N.V. | Dual stack optical data storage medium |
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WO2004010424A1 (en) * | 2002-07-24 | 2004-01-29 | Koninklijke Philips Electronics N.V. | Multi-stack optical information carrier comprising thermochromic layer |
JP4282285B2 (ja) * | 2002-08-12 | 2009-06-17 | Tdk株式会社 | 光記録媒体及び光記録方法 |
US7781146B2 (en) * | 2002-11-22 | 2010-08-24 | Tdk Corporation | Optical recording medium |
JP2004209894A (ja) * | 2003-01-07 | 2004-07-29 | Victor Co Of Japan Ltd | 光情報記録媒体 |
JP2004265561A (ja) * | 2003-03-04 | 2004-09-24 | Tdk Corp | 光記録媒体 |
JP4064871B2 (ja) * | 2003-06-05 | 2008-03-19 | 株式会社東芝 | 光ディスク及び光ディスク製造方法 |
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EP1741102B1 (en) * | 2004-04-15 | 2008-12-03 | Koninklijke Philips Electronics N.V. | Optical master substrate and method to manufacture high-density relief structure |
JP4486131B2 (ja) * | 2004-10-19 | 2010-06-23 | モーザー ベイアー インディア リミテッド | マスタ基板及び高密度凹凸構造を製造する方法 |
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