TW504880B - Semiconductor laser device and method of manufacturing the same - Google Patents
Semiconductor laser device and method of manufacturing the same Download PDFInfo
- Publication number
- TW504880B TW504880B TW090121985A TW90121985A TW504880B TW 504880 B TW504880 B TW 504880B TW 090121985 A TW090121985 A TW 090121985A TW 90121985 A TW90121985 A TW 90121985A TW 504880 B TW504880 B TW 504880B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- laser device
- semiconductor laser
- ridge
- coating layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005253 cladding Methods 0.000 claims abstract description 35
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 137
- 239000011247 coating layer Substances 0.000 claims description 40
- 239000011241 protective layer Substances 0.000 claims description 40
- 229910052733 gallium Inorganic materials 0.000 claims description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 23
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- 239000010931 gold Substances 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 238000006731 degradation reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 gallium halide Chemical class 0.000 description 1
- OZTVKGRKOWIYRK-UHFFFAOYSA-N gallium palladium Chemical compound [Ga].[Pd] OZTVKGRKOWIYRK-UHFFFAOYSA-N 0.000 description 1
- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000279552A JP2002094181A (ja) | 2000-09-14 | 2000-09-14 | 半導体レーザ素子及びその作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW504880B true TW504880B (en) | 2002-10-01 |
Family
ID=18764542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090121985A TW504880B (en) | 2000-09-14 | 2001-09-05 | Semiconductor laser device and method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6647045B2 (enExample) |
| JP (1) | JP2002094181A (enExample) |
| KR (1) | KR100829874B1 (enExample) |
| TW (1) | TW504880B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
| EP1573870B1 (en) * | 2002-12-20 | 2007-02-07 | Cree, Inc. | Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices |
| JP3913194B2 (ja) * | 2003-05-30 | 2007-05-09 | シャープ株式会社 | 窒化物半導体発光素子 |
| JP4326297B2 (ja) | 2003-09-30 | 2009-09-02 | シャープ株式会社 | モノリシック多波長レーザ素子およびその製造方法 |
| JP2006012899A (ja) * | 2004-06-22 | 2006-01-12 | Sharp Corp | 半導体レーザ素子および半導体レーザ素子の製造方法 |
| US7345309B2 (en) * | 2004-08-31 | 2008-03-18 | Lockheed Martin Corporation | SiC metal semiconductor field-effect transistor |
| US7508857B2 (en) * | 2004-12-14 | 2009-03-24 | Electronics And Telecommunications Research Institute | Semiconductor laser diode and method of manufacturing the same |
| KR100710048B1 (ko) * | 2004-12-14 | 2007-04-23 | 한국전자통신연구원 | 반도체 레이저 다이오드 및 그 제조방법 |
| JP5116960B2 (ja) * | 2005-09-27 | 2013-01-09 | 古河電気工業株式会社 | 面発光レーザ素子およびレーザアレイ |
| KR101060132B1 (ko) * | 2009-04-28 | 2011-08-29 | (주)큐에스아이 | 레이저 다이오드의 구조 |
| US8995483B2 (en) * | 2011-12-16 | 2015-03-31 | Eos Photonics, Inc. | Methods and apparatus for temperature tuning of semiconductor lasers |
| US9450053B2 (en) * | 2012-07-26 | 2016-09-20 | Massachusetts Institute Of Technology | Photonic integrated circuits based on quantum cascade structures |
| US20210313773A1 (en) * | 2018-07-20 | 2021-10-07 | Sony Semiconductor Solutions Corporation | Semiconductor light emitting device and manufacturing method of semiconductor light emitting device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01187891A (ja) * | 1988-01-22 | 1989-07-27 | Canon Inc | 半導体レーザおよびその製造方法 |
| JP2706316B2 (ja) * | 1989-05-19 | 1998-01-28 | 松下電器産業株式会社 | 半導体レーザ装置の製造方法 |
| JP2863648B2 (ja) * | 1991-04-16 | 1999-03-03 | 三菱電機株式会社 | 可視光半導体レーザ |
| JP3133579B2 (ja) * | 1992-10-21 | 2001-02-13 | 三洋電機株式会社 | 半導体レーザ素子 |
| JPH06268334A (ja) * | 1993-03-16 | 1994-09-22 | Mitsubishi Kasei Corp | レーザーダイオード及びその製造方法 |
| US5600667A (en) * | 1993-04-05 | 1997-02-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
| JPH1075011A (ja) * | 1996-08-30 | 1998-03-17 | Sony Corp | 半導体レーザ |
| JPH10233556A (ja) * | 1997-02-20 | 1998-09-02 | Mitsubishi Electric Corp | リッジ型半導体レーザダイオードとその製造方法 |
| JP3653169B2 (ja) * | 1998-01-26 | 2005-05-25 | シャープ株式会社 | 窒化ガリウム系半導体レーザ素子 |
| US6330263B1 (en) * | 1998-05-06 | 2001-12-11 | Sarnoff Corporation | Laser diode having separated, highly-strained quantum wells |
-
2000
- 2000-09-14 JP JP2000279552A patent/JP2002094181A/ja active Pending
-
2001
- 2001-09-05 TW TW090121985A patent/TW504880B/zh not_active IP Right Cessation
- 2001-09-06 KR KR1020010054763A patent/KR100829874B1/ko not_active Expired - Fee Related
- 2001-09-13 US US09/950,786 patent/US6647045B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100829874B1 (ko) | 2008-05-16 |
| KR20020021600A (ko) | 2002-03-21 |
| US6647045B2 (en) | 2003-11-11 |
| JP2002094181A (ja) | 2002-03-29 |
| US20020034204A1 (en) | 2002-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |