TW490710B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TW490710B
TW490710B TW089104379A TW89104379A TW490710B TW 490710 B TW490710 B TW 490710B TW 089104379 A TW089104379 A TW 089104379A TW 89104379 A TW89104379 A TW 89104379A TW 490710 B TW490710 B TW 490710B
Authority
TW
Taiwan
Prior art keywords
insulating layer
layer
wiring
modulus
young
Prior art date
Application number
TW089104379A
Other languages
English (en)
Chinese (zh)
Inventor
Sachiyo Ito
Masahiko Hasunuma
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW490710B publication Critical patent/TW490710B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW089104379A 1999-03-19 2000-03-10 Semiconductor device TW490710B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07509799A JP4460669B2 (ja) 1999-03-19 1999-03-19 半導体装置

Publications (1)

Publication Number Publication Date
TW490710B true TW490710B (en) 2002-06-11

Family

ID=13566336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089104379A TW490710B (en) 1999-03-19 2000-03-10 Semiconductor device

Country Status (4)

Country Link
US (2) US6414394B1 (enExample)
JP (1) JP4460669B2 (enExample)
KR (1) KR100429750B1 (enExample)
TW (1) TW490710B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968035A (zh) * 2016-10-19 2018-04-27 株式会社村田制作所 半导体装置及其制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164428A (ja) * 2000-11-29 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
JP2002299441A (ja) * 2001-03-30 2002-10-11 Jsr Corp デュアルダマシン構造の形成方法
JP4731456B2 (ja) 2006-12-19 2011-07-27 富士通セミコンダクター株式会社 半導体装置
JP2012530362A (ja) * 2009-06-19 2012-11-29 アイメック 金属／有機誘電体界面でのクラックの低減
TWI414047B (zh) * 2010-03-17 2013-11-01 財團法人工業技術研究院 電子元件封裝結構及其製造方法
KR101906408B1 (ko) * 2011-10-04 2018-10-11 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US9397051B2 (en) * 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3092675B2 (ja) * 1990-09-28 2000-09-25 東ソー株式会社 オキシナイトライドガラス及びその製造方法
US5689136A (en) * 1993-08-04 1997-11-18 Hitachi, Ltd. Semiconductor device and fabrication method
JPH07326671A (ja) 1994-05-31 1995-12-12 Texas Instr Inc <Ti> 半導体装置の製造方法
JP3305211B2 (ja) * 1996-09-10 2002-07-22 松下電器産業株式会社 半導体装置及びその製造方法
US5945203A (en) * 1997-10-14 1999-08-31 Zms Llc Stratified composite dielectric and method of fabrication
US6001747A (en) * 1998-07-22 1999-12-14 Vlsi Technology, Inc. Process to improve adhesion of cap layers in integrated circuits
US6037668A (en) * 1998-11-13 2000-03-14 Motorola, Inc. Integrated circuit having a support structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968035A (zh) * 2016-10-19 2018-04-27 株式会社村田制作所 半导体装置及其制造方法

Also Published As

Publication number Publication date
US6580171B2 (en) 2003-06-17
JP4460669B2 (ja) 2010-05-12
JP2000269337A (ja) 2000-09-29
US6414394B1 (en) 2002-07-02
US20020130421A1 (en) 2002-09-19
KR100429750B1 (ko) 2004-05-03
KR20000076915A (ko) 2000-12-26

Similar Documents

Publication Publication Date Title
TW444252B (en) Semiconductor apparatus and its fabricating method
US9735110B2 (en) Semiconductor device and semiconductor device manufacturing method
TW587274B (en) Semiconductor device and a method for manufacturing thereof
CN100407400C (zh) 布线结构
JP4040363B2 (ja) 半導体装置
TW396454B (en) Semiconductor device and method for fabricating the same
TW490710B (en) Semiconductor device
TWI222170B (en) Interconnect structures containing stress adjustment cap layer
TW468247B (en) Damascene wiring structure and semiconductor device with damascene wirings
US9425144B2 (en) Metal fuse structure for improved programming capability
TW201041112A (en) Structure and method of forming metal interconnect structures in ultra low-k dielectrics
TWI236097B (en) Integrated circuit capacitor structure
JP2005085939A (ja) 半導体装置およびその製造方法
TW200408006A (en) Semiconductor device and the method for proucing the same
TW465039B (en) Void-type metal interconnect and method for making the same
JP4012163B2 (ja) 半導体装置
CN101740547B (zh) 半导体器件，制造半导体器件的方法以及溅射设备的靶
TWI305374B (en) Semiconductor device
TWI280657B (en) Circuit device
US7948094B2 (en) Semiconductor device
JP2007103546A (ja) 半導体装置およびその製造方法
TWI271802B (en) Semiconductor structures and methods for forming the same
JP2007294586A (ja) 半導体装置
JP4701264B2 (ja) 半導体装置、および半導体装置の製造方法
TWI285938B (en) Semiconductor device

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees