TW483081B - Optimized optical system design for endpoint detection - Google Patents
Optimized optical system design for endpoint detection Download PDFInfo
- Publication number
- TW483081B TW483081B TW089123265A TW89123265A TW483081B TW 483081 B TW483081 B TW 483081B TW 089123265 A TW089123265 A TW 089123265A TW 89123265 A TW89123265 A TW 89123265A TW 483081 B TW483081 B TW 483081B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer processing
- wafer
- patent application
- coating
- light
- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/449,338 US6547458B1 (en) | 1999-11-24 | 1999-11-24 | Optimized optical system design for endpoint detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW483081B true TW483081B (en) | 2002-04-11 |
Family
ID=23783782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089123265A TW483081B (en) | 1999-11-24 | 2000-11-04 | Optimized optical system design for endpoint detection |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6547458B1 (enExample) |
| EP (1) | EP1104018A3 (enExample) |
| JP (1) | JP4725873B2 (enExample) |
| KR (1) | KR20010051930A (enExample) |
| TW (1) | TW483081B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6585908B2 (en) * | 2001-07-13 | 2003-07-01 | Axcelis Technologies, Inc. | Shallow angle interference process and apparatus for determining real-time etching rate |
| US20030215962A1 (en) * | 2002-05-14 | 2003-11-20 | Applied Materials, Inc. | Integration of multiple processes within a single chamber |
| US6863772B2 (en) * | 2002-10-09 | 2005-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd | Dual-port end point window for plasma etcher |
| US7892357B2 (en) * | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
| US7821655B2 (en) * | 2004-02-09 | 2010-10-26 | Axcelis Technologies, Inc. | In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction |
| KR100549955B1 (ko) * | 2004-07-20 | 2006-02-07 | 삼성전자주식회사 | 반도체 제조 설비의 식각종말점 검출장치 |
| US7120553B2 (en) * | 2004-07-22 | 2006-10-10 | Applied Materials, Inc. | Iso-reflectance wavelengths |
| US7479191B1 (en) | 2005-04-22 | 2009-01-20 | Novellus Systems, Inc. | Method for endpointing CVD chamber cleans following ultra low-k film treatments |
| KR100688980B1 (ko) * | 2005-07-01 | 2007-03-08 | 삼성전자주식회사 | 플라즈마 모니터링장치와 플라즈마 모니터링 방법 |
| US8262800B1 (en) | 2008-02-12 | 2012-09-11 | Novellus Systems, Inc. | Methods and apparatus for cleaning deposition reactors |
| US20100126555A1 (en) * | 2008-11-20 | 2010-05-27 | Hoozad Inc. | Concentrating photovoltaic photo-current balancing system |
| US8591659B1 (en) | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
| US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
| JP2012141291A (ja) * | 2010-12-16 | 2012-07-26 | Fujifilm Corp | 放射線撮影装置 |
| KR102396143B1 (ko) | 2018-02-09 | 2022-05-09 | 삼성전자주식회사 | Oes 장치와 이를 포함하는 플라즈마 처리 장치, 및 반도체 장치의 제조 방법 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4341592A (en) | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
| US4201579A (en) | 1978-06-05 | 1980-05-06 | Motorola, Inc. | Method for removing photoresist by hydrogen plasma |
| US4394237A (en) * | 1981-07-17 | 1983-07-19 | Bell Telephone Laboratories, Incorporated | Spectroscopic monitoring of gas-solid processes |
| US4491499A (en) | 1984-03-29 | 1985-01-01 | At&T Technologies, Inc. | Optical emission end point detector |
| US4695700A (en) | 1984-10-22 | 1987-09-22 | Texas Instruments Incorporated | Dual detector system for determining endpoint of plasma etch process |
| US4675072A (en) * | 1986-06-25 | 1987-06-23 | International Business Machines Corporation | Trench etch endpoint detection by LIF |
| JPH0777211B2 (ja) | 1987-08-19 | 1995-08-16 | 富士通株式会社 | アッシング方法 |
| US4859277A (en) * | 1988-05-03 | 1989-08-22 | Texas Instruments Incorporated | Method for measuring plasma properties in semiconductor processing |
| JP2606923B2 (ja) * | 1989-05-29 | 1997-05-07 | 松下電子工業株式会社 | ドライエッチング方法およびその装置 |
| US5097430A (en) * | 1990-01-16 | 1992-03-17 | Applied Materials, Inc. | Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber |
| JP2936501B2 (ja) * | 1992-01-29 | 1999-08-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びこのクリーニング方法 |
| US5841651A (en) * | 1992-11-09 | 1998-11-24 | The United States Of America As Represented By The United States Department Of Energy | Closed loop adaptive control of spectrum-producing step using neural networks |
| TW260857B (enExample) | 1993-03-04 | 1995-10-21 | Tokyo Electron Co Ltd | |
| US5728253A (en) | 1993-03-04 | 1998-03-17 | Tokyo Electron Limited | Method and devices for detecting the end point of plasma process |
| US5498308A (en) | 1994-02-25 | 1996-03-12 | Fusion Systems Corp. | Plasma asher with microwave trap |
| JPH08106992A (ja) * | 1994-03-24 | 1996-04-23 | Hitachi Ltd | プラズマ処理方法およびその装置 |
| US5733820A (en) * | 1995-04-27 | 1998-03-31 | Sharp Kabushiki Kaisha | Dry etching method |
| JP3258852B2 (ja) * | 1995-04-27 | 2002-02-18 | シャープ株式会社 | ドライエッチング装置の異常検出方法 |
| US5824604A (en) | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
| US5961851A (en) | 1996-04-02 | 1999-10-05 | Fusion Systems Corporation | Microwave plasma discharge device |
| US5908319A (en) | 1996-04-24 | 1999-06-01 | Ulvac Technologies, Inc. | Cleaning and stripping of photoresist from surfaces of semiconductor wafers |
| US5882489A (en) | 1996-04-26 | 1999-03-16 | Ulvac Technologies, Inc. | Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
| US5846373A (en) | 1996-06-28 | 1998-12-08 | Lam Research Corporation | Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber |
| US5770523A (en) | 1996-09-09 | 1998-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for removal of photoresist residue after dry metal etch |
| US5943130A (en) * | 1996-10-21 | 1999-08-24 | Insitec, Inc. | In situ sensor for near wafer particle monitoring in semiconductor device manufacturing equipment |
| US5940175A (en) * | 1996-11-01 | 1999-08-17 | Msp Corporation | Method and apparatus for surface inspection in a chamber |
| EP0841692A3 (en) * | 1996-11-08 | 1998-12-23 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for optical evaluation of a semiconductor device |
| US5694207A (en) | 1996-12-09 | 1997-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etch rate monitoring by optical emission spectroscopy |
| US5956148A (en) * | 1996-12-20 | 1999-09-21 | Texas Instruments Incorporated | Semiconductor surface measurement system and method |
| FR2760085B1 (fr) * | 1997-02-26 | 1999-05-14 | Instruments Sa | Dispositif et procede de mesures tridimensionnelles et d'observation in situ d'une couche superficielle deposee sur un empilement de couches minces |
| JPH10294305A (ja) * | 1997-04-18 | 1998-11-04 | Hitachi Ltd | 半導体製造方法及び装置 |
| JPH10335307A (ja) * | 1997-05-27 | 1998-12-18 | Hitachi Ltd | 加工プロセスの終点検出方法およびそれを用いた装置 |
| US5877407A (en) | 1997-07-22 | 1999-03-02 | Lucent Technologies Inc. | Plasma etch end point detection process |
| US6536449B1 (en) | 1997-11-17 | 2003-03-25 | Mattson Technology Inc. | Downstream surface cleaning process |
-
1999
- 1999-11-24 US US09/449,338 patent/US6547458B1/en not_active Expired - Lifetime
-
2000
- 2000-11-04 TW TW089123265A patent/TW483081B/zh not_active IP Right Cessation
- 2000-11-10 EP EP00310010A patent/EP1104018A3/en not_active Withdrawn
- 2000-11-24 KR KR1020000070306A patent/KR20010051930A/ko not_active Ceased
- 2000-11-24 JP JP2000358026A patent/JP4725873B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001210629A (ja) | 2001-08-03 |
| JP4725873B2 (ja) | 2011-07-13 |
| EP1104018A2 (en) | 2001-05-30 |
| KR20010051930A (ko) | 2001-06-25 |
| US6547458B1 (en) | 2003-04-15 |
| EP1104018A3 (en) | 2004-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |