JP4725873B2 - ウエハ処理システム及びウエハ処理工程を監視する方法 - Google Patents

ウエハ処理システム及びウエハ処理工程を監視する方法 Download PDF

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JP4725873B2
JP4725873B2 JP2000358026A JP2000358026A JP4725873B2 JP 4725873 B2 JP4725873 B2 JP 4725873B2 JP 2000358026 A JP2000358026 A JP 2000358026A JP 2000358026 A JP2000358026 A JP 2000358026A JP 4725873 B2 JP4725873 B2 JP 4725873B2
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wafer
light
wafer processing
processing chamber
viewing
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JP2001210629A (ja
JP2001210629A5 (enExample
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チャールズ ジャノス アラン
ギル カルドソ アンドレ
ブリアン リチャードソン ダニエル
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アクセリス テクノロジーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2000358026A 1999-11-24 2000-11-24 ウエハ処理システム及びウエハ処理工程を監視する方法 Expired - Lifetime JP4725873B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US449338 1999-11-24
US09/449,338 US6547458B1 (en) 1999-11-24 1999-11-24 Optimized optical system design for endpoint detection

Publications (3)

Publication Number Publication Date
JP2001210629A JP2001210629A (ja) 2001-08-03
JP2001210629A5 JP2001210629A5 (enExample) 2008-01-24
JP4725873B2 true JP4725873B2 (ja) 2011-07-13

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ID=23783782

Family Applications (1)

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JP2000358026A Expired - Lifetime JP4725873B2 (ja) 1999-11-24 2000-11-24 ウエハ処理システム及びウエハ処理工程を監視する方法

Country Status (5)

Country Link
US (1) US6547458B1 (enExample)
EP (1) EP1104018A3 (enExample)
JP (1) JP4725873B2 (enExample)
KR (1) KR20010051930A (enExample)
TW (1) TW483081B (enExample)

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US6863772B2 (en) * 2002-10-09 2005-03-08 Taiwan Semiconductor Manufacturing Co., Ltd Dual-port end point window for plasma etcher
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
KR100549955B1 (ko) * 2004-07-20 2006-02-07 삼성전자주식회사 반도체 제조 설비의 식각종말점 검출장치
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7479191B1 (en) 2005-04-22 2009-01-20 Novellus Systems, Inc. Method for endpointing CVD chamber cleans following ultra low-k film treatments
KR100688980B1 (ko) * 2005-07-01 2007-03-08 삼성전자주식회사 플라즈마 모니터링장치와 플라즈마 모니터링 방법
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
US20100126555A1 (en) * 2008-11-20 2010-05-27 Hoozad Inc. Concentrating photovoltaic photo-current balancing system
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
KR102396143B1 (ko) 2018-02-09 2022-05-09 삼성전자주식회사 Oes 장치와 이를 포함하는 플라즈마 처리 장치, 및 반도체 장치의 제조 방법

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US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4201579A (en) 1978-06-05 1980-05-06 Motorola, Inc. Method for removing photoresist by hydrogen plasma
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes
US4491499A (en) 1984-03-29 1985-01-01 At&T Technologies, Inc. Optical emission end point detector
US4695700A (en) 1984-10-22 1987-09-22 Texas Instruments Incorporated Dual detector system for determining endpoint of plasma etch process
US4675072A (en) * 1986-06-25 1987-06-23 International Business Machines Corporation Trench etch endpoint detection by LIF
JPH0777211B2 (ja) 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4859277A (en) * 1988-05-03 1989-08-22 Texas Instruments Incorporated Method for measuring plasma properties in semiconductor processing
JP2606923B2 (ja) * 1989-05-29 1997-05-07 松下電子工業株式会社 ドライエッチング方法およびその装置
US5097430A (en) * 1990-01-16 1992-03-17 Applied Materials, Inc. Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber
JP2936501B2 (ja) * 1992-01-29 1999-08-23 東京エレクトロン株式会社 プラズマ処理装置及びこのクリーニング方法
US5841651A (en) * 1992-11-09 1998-11-24 The United States Of America As Represented By The United States Department Of Energy Closed loop adaptive control of spectrum-producing step using neural networks
TW260857B (enExample) 1993-03-04 1995-10-21 Tokyo Electron Co Ltd
US5728253A (en) 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
US5498308A (en) 1994-02-25 1996-03-12 Fusion Systems Corp. Plasma asher with microwave trap
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
US5733820A (en) * 1995-04-27 1998-03-31 Sharp Kabushiki Kaisha Dry etching method
JP3258852B2 (ja) * 1995-04-27 2002-02-18 シャープ株式会社 ドライエッチング装置の異常検出方法
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US5770523A (en) 1996-09-09 1998-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removal of photoresist residue after dry metal etch
US5943130A (en) * 1996-10-21 1999-08-24 Insitec, Inc. In situ sensor for near wafer particle monitoring in semiconductor device manufacturing equipment
US5940175A (en) * 1996-11-01 1999-08-17 Msp Corporation Method and apparatus for surface inspection in a chamber
EP0841692A3 (en) * 1996-11-08 1998-12-23 Matsushita Electric Industrial Co., Ltd. Apparatus and method for optical evaluation of a semiconductor device
US5694207A (en) 1996-12-09 1997-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Etch rate monitoring by optical emission spectroscopy
US5956148A (en) * 1996-12-20 1999-09-21 Texas Instruments Incorporated Semiconductor surface measurement system and method
FR2760085B1 (fr) * 1997-02-26 1999-05-14 Instruments Sa Dispositif et procede de mesures tridimensionnelles et d'observation in situ d'une couche superficielle deposee sur un empilement de couches minces
JPH10294305A (ja) * 1997-04-18 1998-11-04 Hitachi Ltd 半導体製造方法及び装置
JPH10335307A (ja) * 1997-05-27 1998-12-18 Hitachi Ltd 加工プロセスの終点検出方法およびそれを用いた装置
US5877407A (en) 1997-07-22 1999-03-02 Lucent Technologies Inc. Plasma etch end point detection process
US6536449B1 (en) 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process

Also Published As

Publication number Publication date
JP2001210629A (ja) 2001-08-03
EP1104018A2 (en) 2001-05-30
KR20010051930A (ko) 2001-06-25
TW483081B (en) 2002-04-11
US6547458B1 (en) 2003-04-15
EP1104018A3 (en) 2004-05-19

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