TW480716B - Microlens for surface mount products - Google Patents

Microlens for surface mount products Download PDF

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Publication number
TW480716B
TW480716B TW089109863A TW89109863A TW480716B TW 480716 B TW480716 B TW 480716B TW 089109863 A TW089109863 A TW 089109863A TW 89109863 A TW89109863 A TW 89109863A TW 480716 B TW480716 B TW 480716B
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Taiwan
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item
scope
microlens
forming
temperature
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TW089109863A
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Azar Assadi
Parvin Mossahebi
Kabul Sengupta
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Intel Corp
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0012Arrays characterised by the manufacturing method
    • G02B3/0018Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/1221Basic optical elements, e.g. light-guiding paths made from organic materials
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/124Geodesic lenses or integrated gratings
    • G02B6/1245Geodesic lenses
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02325Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Materials For Photolithography (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Separation Of Suspended Particles By Flocculating Agents (AREA)

Description

480716 A7 經濟部智慧財產局員工消費合作社印製 微 微 五、發明說明( 發明背景 本發明-般係有關於感光性裝置,且更特別在於使用 顯微透鏡陣列來增加該等感光性裝置之填滿係數。 目前,由於事實上可以一低成本之方式使大量連接製 造到電路板’表面安置包裝於大零件係、享有相當大的商業 接受度。於該表面安置㈣電路包裝技術(稱為四邊扁平包 裝(QFP))之中,僅藉著將包裝件放置於板子上並加熱,即 可將1裝件連接到-電路板,諸如—印刷電路板(KB)。 熱融化了包裝件之-表面上的―多數接點,將包裝件連接 到板子。此技術可以-高速度且低成本之自動方式,將積 體電路連接到電路板。 積體電路影像感應器係亦獲得逐漸增加之接受度。可 以使用傳統的邏輯半導體製造程序來形成互補金屬氧化半 導體(CMOS)影像纟置。可以快速且相冑低成本來製造這些 裝置,’使裝置除了影像功能之外,具有先進之電子功能。一 °午夕感光性裝置以顯微透鏡陣列增加其填滿係數。填 滿係數係實際到達影像感應器之上的入射光線量之量測值 。顯微透鏡作為-縮小鏡片,㉟光線聚焦於補足影像感應 陣列之各像素上。 顯微透鏡可以由正光阻或中性凝膠所製造,這些顯 透鏡可以直接形成於影像感應器之上,例如;藉著將顯 透鏡陣列放置於濾色鏡陣列(CFA)之上,該濾色鏡陣列係 位於影像感應陣列之上方。否則,可以於影像感應陣列之 上方將顯微透鏡陣列隔開。此情形中,目前就發明者所知 ------------AW1 ^-----^----^--------- (請先閱讀背面之注意事項再填寫本頁)
A7 A7
i、發明說明(2 ) (請先閱讀背面之注意事項再填寫本頁) ,顯微透鍊一般係對熱敏感,且因而尚未使用於表面安置 包裝。一般相信傳統之表面安置包裝所包含之溫度等級為 225 C ,取決於對傳統顯微透鏡陣列不利影響之加熱時間。 因此,對於能夠將低成本包裝技術施加於感光性裝置 ,該帶有顯微透鏡之感光性裝置達成可接受的填滿係數具 有持續之需要。 概要 根據一觀點,一種用來形成顯微透鏡之方法包括有: 形成一感光性裝置;將顯微透鏡配置於裝置之上;將裝置 包裝;然後將包裝後之裝置暴露於表面安置質量回流。 圖示之說明 第1圖係依照本發明之一具體實施例之顯微透鏡陣列 具體實施例的透視圖; 第2圖係為一流程圖,顯示本發明之具體實施例中使用 質量回流技術來形成顯微透鏡的步驟; 第3圖係為第2圖中所示之陣列於加熱步驟之後的橫截 面圖; 第4圖係為製造程序中之顯微透鏡陣列的橫截面圖; 經濟部智慧財產局員工消費合作社印製 第5圖顯示使用依照本發明之具體實施例的裝置。 詳細說明 參考第1圖,一顯微透鏡陣列(1 〇)可以包括一多數之顯 微透鏡(12),依照本發明之具體實施例,該顯微透鏡由通 道(14)隔開。以顯示之顯微透鏡(12),矩形或正方形減少了 由通道(14)所浪費的空間,且藉其增進填滿係數。顯微 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 480716 五、發明說明(3 ) 經濟部智慧財產局員工消費合作社印製
A7 B7 鏡(12)之準確的半球形狀可以藉著增加或減少相較於圖面 顯示之曲率加以調整。除了矩形之顯微透鏡之外,可以使 用其他的形狀,包括祖形' 半螺旋之顯微透鏡。 顯微透鏡陣列(10)可以由實質上可傳遞光之正光阻( 諸如新蟲膠novalac)所形成。顯微透鏡陣列(1〇)可以禁得起 將表面安置包裝件連接到電路板所需要之質量回流溫度步 驟。以傳統的顯微透鏡,當顯微透鏡暴露於對透鏡之傳遞 1*生與幵V狀具不利影響之表面安置高溫時,^會使顯微透鏡 之光學特性衰減。-使用顯微透鏡陣列(10)之?文良感光性 裝置可以利用普及的低成本表面安置包裝程序。
參考第2圖,最初係將材料於一適當表面上(諸如cFA 層,玻璃基質;或者某些情況下直接於感光性裝置之上) 利用旋轉塗佈形成顯微透鏡,如(26)所指示。雖然第2圖顯 示使用旋轉塗佈沉澱材料形成顯微透鏡,然而同樣可以使 用其他已知的技術。接著,將塗佈之材料送交—軟烘烤步 驟軟供烤步驟於(28)指示。於本發明之一具體實施例中 ’可以將透鏡形成材料塗佈到約為3微米之厚度,且可以丨〇 〇 °c之溫度承受軟烘烤,例如;11(rc烘烤54〇亳秒。可以變 化軟烘烤步驟所使用之時間量與溫度,且其為塗佈材料厚 度之函數。之後將烘烤過之塗層送交照相平版印刷,如第2 圖中之(30)所指示。 於本發明之一個具體實施例中,照相平版印刷過後, 即將成為顯微透鏡之區塊(16)的形狀如第3圖所示。於該情 形中,區塊係藉著槽(18)加以隔開,該槽具有之寬度約為 ^------------------ (請先閱讀背面之注意事項再填寫本頁)
本,我張尺度適用中國國豕標準(CNS)A4規格咖X撕公爱)
經濟部智慧財產局員工消費合作社印製
480716 五、發明說明(4 ) 3.5微米,以大約3微米之斜率形成壁。於顯示的具體實施 例中,各區塊(16)之長度約為9微米。使用傳統之技術(諸 如於方塊(32)所指示之光阻處理技術)使區塊形成樣式。 接著將顯微透鏡區塊(16)漂白,如方塊(34)中所指示。 漂白程序係有益於防止顯微透鏡暴露於較高溫度之衰減, 以及來增將傳遞性。 漂白可以係為一 5到1 〇秒左右之快速漂白步驟,且於一 具體貝加例中’該漂白步驟時間為6到7秒。使用深紫外線 (DUV)波長輻射完成漂白,該輻射產生之波長舉例為: 到430毫微米。通過UV濾鏡之波長約為400毫微米以上,與 傳統使用多頻率之漂白相比,如此容許降低漂白時間,傳 統漂白方式可能需要30秒左右。DUV漂白使用之波長超過 400毫微米,其在於從光阻材料移除光作用材料係為非常有 效。據彳§光作用材料必須承擔:變黃;傳遞性損失;及加 熱不穩定性之責任。 漂白後之區塊(16)隨後即送交回流步驟(36)。於發明之 具體實施例中,回流需要之溫度約為1 5〇。(〕(例如;160。(:, 經過120秒)。結果,第3圖中所示之區塊會融化,形成第4 圖中所示之形狀,顯微透鏡(12)係藉由一通道(14)隔開。於 本發明之一個具體實施例中,顯微透鏡(12)之高度(T)約為 2.8微米,且透鏡(12)之長度約為11.5微米。 現在可以將透鏡暴露到一溫度約為200°C(例如;225 °C烘烤2到3分鐘)之硬烘烤步驟(方塊38)。傳統之處理一般 有效利用各個透鏡之間的間隙,特別避免重疊。藉著以熱 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------------裳-----^----訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 480716 A7 一1 · — ————— 五、發明說明(5 ) 穩定性代替有效之空間利用,可以製造熱穩定之顯微透鏡 以後將帶有顯微透鏡(12)之影像器加以包裝(方塊40) ,之後顯微透鏡可以暴露到一傳統之溫度,該溫度用於質 量回流表面安置包裝,而不會負面影響透鏡之光學特性。 於某些具體實施例中,使顯微透鏡適合至少禁得起225〇c之 溫度至少持續1分鐘,且於某些情形中至少持續2分鐘。於 某些具體貫施例中,不僅大致上未改變其傳遞性,且同樣 大致上不會影響透鏡之形狀。 現在參考第5圖,可將完成之顯微透鏡陣列(44)放置於 感光性裝置(46)之上方,該感光性裝置包含於表面安置包 裝件(48)之中。外部折射透鏡(42)可將通過顯微透鏡陣列 (44)之光線聚焦於感光性裝置(46)之上。於發明之一個具體 貫施例中’依照傳統之表面安置技術,使用引線(5〇)可以 將具有窗口之四邊扁平包裝件(48)固定到電路板(52)。由於 施加熱量,可以使引線(50)完成將包裝件(48)連接到電路板 (52),而不會負面影響顯微透鏡陣列(44)之光學性能。 雖然已經以有限數量之相關具體實施例描述本發明, 熟知此技藝之人士將會從其體認到許多的修正與變化。附 加之申請專利範圍預計來包括該等屬於本發明之真正精神 與範疇中的修正與變化。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------AWI -----^----訂---------線 (請先閱讀背面之注意事項再填寫本頁) 480716 A7 B7 經濟部智慧財產局員工消費合作社印製
五、發明說明(6 ) 元件標號對照 ίο…顯微透鏡陣列 12…顯微透鏡 14…通道 26…旋轉塗佈 28…軟烘烤 30…照相平板印刷 32…透鏡層樣式 34···漂白 36…回流 38···硬烘烤 40…包裝 42…外部折射透鏡 44…顯微透鏡陣列 46…感光性裝置 48…包裝件 50…引線 52…電路板 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)

Claims (1)

  1. 申請專利範圍 1.種形成顯微透鏡之方法,其包含有: 形成感光性裝置; 將顯微透鏡配置於上述裝置之上; 包裝上述之裝置;及 將上述包裝後之裝置暴露於一表面安置質量回流 步驟。 2·如專範圍第1項之方法,其中更包括有使用深紫 外線 和白上述顯微透鏡之形成材料 經濟部智慧財產局員工消費合作社印製 如專^,1巳圍第2項之方法,其包括有過遽掉波長少 於400亳微米之漂白。 4·如專範圍第3項之方法,其包括有漂白約1〇秒鐘 。 ! * 如專範圍第1之方法,其更包括有將上述顯微 透鏡形ΐ材料暴露到一系列增加溫度之處理步驟。 如專利範圍第5項之方法,其包括有將上述顯微透 鏡形成暴露到三個加熱步驟,各加熱步驟具有逐漸 增高之|樂摩與加長之時間。 7. 如專利f請範圍第丨項之方法,其包括有使用正光阻作 為顯微透鏡形成材料。 8. 如專利丨卦請·範圍第丨項之方法,其包括有:使顯微透鏡 形成外'料形成第一形狀之樣式;及將該材料暴露到熱, 來使_ i才:料改變形狀。 9·如專利%為範圍第8項之方法,其更包括有:將該材料 暴露到約為100°C之第一熱處理;將該材料暴露到約為 頁 訂 線 本紙K遇財_家標準(CNS)Ai7見格 (2W X 297公爱) 10 A8 B8 C8 Γ)8 申請專利範圍 150 C之第一熱處理,及將該材料暴露到約為之第 三熱處理。 1〇·如專利今.¾範圍第旧之方法,其包括將顯微透鏡形成 材料表少於20〇°〇之溫度硬烘烤至少約2分鐘。 11 ·如專矛凊範圍第i項之方法,其包括將顯微透鏡形成 材料於某/JDL度硬烘烤足夠之時間,可使上述材料於超過 200°C之溫度至少持續2分鐘熱穩定。 !2· —種包裝之感光性裝置,其包含有: 一感光性陣列; 一形成於上述感光性陣列之上的顯微透鏡;及 一包含上述感光性陣列之包裝件,該包裝件適合來 使用表面安置技術固定電路板。 13·如專,申:;譆範圍第12項之裝置,其中上述之顯微構鏡係 為矩 14.如專請範圍第12項之裝置,其中上述之顯微構鏡係 由正光卩县所形成。 15·如專利申請範圍第12項之裝置,其中上述之顯微構鏡係 以深紫:外線漂白。 16·如專範圍第12項之裝置,其中上述之顯微構鏡係 適「费來持續2分鐘承受至少200°C之溫度。 17·如專;丨較$請範圍第12項之裝置,其中上述之顯微構鏡係 為具有、、窗,弯A四邊爲平包裝件。 M· —種形成一熱穩定顯微透鏡之方法,其包含有: 使用深紫外線輻射漂白顯微透鏡形成材料,該深紫 本紙張尺/艾過用中國國家標準(CNS)A4規格(21Q x 297公髮) --I------------- (請先閱讀背面之注意事項再填寫本頁) 訂: --線· 經濟部智慧財產局員工消費合作社印製 11 480716 B8 C8 Γ)8 申請專利範圍 外線輻射具有超過400毫微米之波長;及 將上述之顯微構鏡於一溫度硬烘烤持續一段時間 ,足以使上述材料至少持續2分鐘承受至少200。〇之溫度 〇 — 19·如專科韦:讀範圍第1 8項之方法,其包括有將上述材料於 至少2pO°C之溫度硬烘烤至少持續2分鐘。 20.如專私廉許,範圍第18項之方法,其包括有將該材料持續 漂白約10秒鐘。 請 先 閱 讀 背 面 之 注 意 事 項 填 寫裝 本衣 頁 訂 •線' 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 12
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