411501 經濟部智慧財產局員工消費合作社印製 五、發明説明（）發明領域： 本發明係有關於—半導體彩色濾光片之製程，特別是 指一種加強強化微透鏡製程容忍度的方法發明背景： 在即將適入千禧年的今日，以數位相機的光電感光元 件及記憶體取代傳統相機之底片，以及以液晶顯示器（lcd) 代替傳統映像管的藍示器已成一種趨勢，原囡不外乎以上 的雨種新產品具有便利性或者具有輕薄短小的可捎性。一 般而S 光 < 感光元件有電荷稱合裝置（charge coupling device; CCD)戎者互補式金氧半電晶體（CM〇s)兩種，而為 了使電子影像信號所能屣現之影像展現色彩，紅、藍、綠 三原色之彩色遽光膜（c〇Ur filter)已是必備的裝置，除了 色彩之外’另一關鍵著LCD與數位相機商品之價格的好壞 的重要因素之一的便是產品的解析度了 。高的解析度代表 影像愈細缀當然愈能激起顧客的購買慜。而較高的解析 度代表著在相同的表面積下光電感測元件的數量愈高，然 而這也代表光電感測元件的感測面積要被縮小。因此，為 補救惑測面積的縮小造成影像信號的滅弱，彩色濾光膜上 再加上微透鏡已是一必要的步驟。 以下將以彩色CMOS的製程為例，介紹傳統之製程技 術。如圖一 A所示為含光電感測元件（ph〇i〇 diode)的底材 1 0經以不感光材料例如氮化物2 5平坦化後，形成一彩色濾 光膜40 ’接著塗怖以間隙膜5〇(spacer)，用以調整景深以 -2- 本紙張尺度適用中國國家榉隼（CNS ) Μ規格（2丨OX297公釐） (請先閱讀背面之注意事項再填寫本頁) ^11501五、發明説明（ A7 B7 — 經濟部智慧財產局員工消"合作社印製411501 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Field of the invention: The present invention relates to the process of semiconductor color filters, especially a method for strengthening the tolerance of microlens manufacturing process. Background of the invention: As we enter the millennium, it is a trend to replace the negative film of traditional cameras with the photoelectric sensor and memory of digital cameras, and the blue indicator of liquid crystal display (lcd) to replace the traditional image tube. The above new rain products are convenient or light and thin. Generally, the S light < light sensor has two types of charge coupling device (CCD) complementary complementary metal oxide semiconductors (CM0s), and in order to make the electronic image signal can show the image Color, red, blue, and green primary color filter (c0Ur filter) is a necessary device, in addition to color 'another important factor that determines the price of LCD and digital camera products is one of the important factors This is the resolution of the product. High resolution means that the more detailed the image, the more it can arouse the purchase of customers. A higher resolution means that the number of photosensors is higher under the same surface area, but this also means that the sensing area of the photosensors will be reduced. Therefore, in order to remedy the weakening of the image signal caused by the reduction of the measurement area, the addition of microlenses on the color filter film is a necessary step. The following will take the color CMOS process as an example to introduce the traditional process technology. As shown in FIG. 1A, after a substrate 10 containing a photo-sensing element (phiodiode) is flattened with a non-photosensitive material such as nitride 25, a color filter film 40 'is formed and then coated with Spacer film 50 (spacer), used to adjust the depth of field to -2- This paper size applies to the Chinese national beech (CNS) M specifications (2 丨 OX297 mm) (Please read the precautions on the back before filling in this page) ^ 11501 V. Description of the invention (A7 B7 — printed by the cooperative of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs "
使最後成形之微透鏡的隹距I 抓攻现u麻跑可以正好落在光電感測元件 上。最後，再塗怖以正光阻60。圖中之光電感測元件(ph〇t〇 :de)的底材10包含由下而上依次為砂基板'CMOS、氧.化 層、金屬導線、及護層。 由於光電感測元件底材1〇之邊緣保留一區域以做為 泉平台板(―Pad”5用以和導線架連接。在上述平 =程、議光膜4。’及間隙膜，―塗怖時同 ㈣線平台板15同時也覆蓋，因此正光阻6。形 圖之、便疋精正光阻曝光時可以被顯影程序時去除，如 圖- Β即為正光阻60經曝光後後顯影之結果。 接著，請參考圖一 C，W # 間战、抽 電漿蝕刻来被正光阻覆審之 :?、膜5。、細光……。㈣接線::: 如圖一 D，在去除殘给, 機材質之微透鏡材料70於接線平：：《谈’全面塗怖-有 後，以光罩、曝光及顯影程二千有台間隙膜5。之上 割為微透鏡雛型陣列。再經約丨6〇。匸質之微透镜材科分 (reflow)即可形成圖示之微透鏡7〇。〇(：的溫度熱烤及回流 上述程序有幾個問題有待解決。 ^ 透鏡材料70塗佈於間隙膜5〇及接線先是有機材質之微 落差存在，因此，在接線平台板15和'’、台板1 5上時兩者3 相銜接處的有機材質70a的堆積不光電感測元件底材3 的方法去除’只有選擇延長顯影的b± ^除’如果欲以曝另 量以使該有機材質70能完全顯影而T或者加強曝光的| 巳，然而不管是選擇作 -3- 本紙張尺度通用中國國家標準（CNS ) Λ4规格（-----〜 ! I n —^n I I i U n ϋ I κ I n u n I— n (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局3貝工消费合作社印製 4ll5〇i五'發明説明（） 者，都將會使得微透鏡陣列部分之微透鏡雜型彼此的間隙 t匕預定之臨界尺寸（criticaldimension)大。换言之，經加熱 回流製程所形成之微透鏡變得較小。其次，如果考慮上述 延長顯影的時間或者加強曝光的能量的因素而把微透鏡雜 型彼此的間隙保留較小，卻又有因微透鏡雛型間隙太小而 導致夾於其内的殘渣（scum)去除不易，因此，再回流程序 中產生微透鏡雛型崩塌，併在一起的危險。 此外，傳統方法之製程中多在平坦化製程中使用一般 和電子元件相同之材質，例如氧化層來進行平坦化製程， 接著，再塗怖彩色濾光鏡材料，間隙膜材料，與微透鏡材 料，如此將f要將接線平台板的部分使用鮏刻製程而在微 透鏡區域使用微影製程。這樣將使得製程步驟必須在微影 和鮏刻室都得進行。 因此針對上迷之問題，本發明將提供一簡化的製程步 驟，並可以使得製程有更大容忍度之方法。 發明目的及概述： 本發明之一目的係簡化微透鏡之製造方法，特別是在 護層進行後的製程，只需以微影製程，加入短時間之去殘 瀵步驟即可，簡化了微影製程與蝕刻需分別進行之繁複。 本發明之另一目的係可以解決微透鏡雛型之間隙間 的殘渣之問題，不需以加強曝光能量或延長顯影時間即可 達到，因此微透鏡製程之容忍度（process window)可以增 1 訂 I" (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4说格（210X297公釐） 411501 a7 B7五、發明説明（） 經濟部智慧財產局員工消費合作社印製 加。 本發明揭露一種強化微透鏡製程之容忍度的方法，該 方法包含以下之步驟：首先，提供已形成複數個光電感測 元件並且已形成導線連接及護層於預定之微透鏡區，且已 曝露接線平台板（bondingpad)之基板；接著，形成一第一 感光性材質於導線、護層及接線平台板上以一平坦化上述 之表面，之後，進行微影製程以去除該接線平台板上之第 一感光性材質。接者，進行彩色濾光膜製程以形成彩色濾 光膜於微透鏡區之上並同時去除於接線平台板上之彩色 濾光膜。為了使微透鏡之焦距可以聚焦於光電感測元件之 上，一第二感光性材質塗怖於彩色濾光膜及接線平台板上 以做為間隙膜（spacer)。進行微影製程以去除接線平台板 上之第二感光性材質。這一層間隙膜之厚度需適當調整。 以一較佳的實施例而言，厚度約為1.6〜2.0 μιη。接著，再 形成一第三感光性材質形成於上述結果之表面上，以做為 微透镜。接著，以光輩曝光及顯影技術以使得微透鏡區形 成微透鏡雛型，每一微透鏡雛型之間隙約為1. 〇〜1 .3 μηι， 接線平台板上之第三感光性材質則因曝光而被顯影劑去 除。接著，進行熱烤以回流第三感光性材f之前，先以含 氧之電漿去除微透鏡雛型之間隙及接線平台板上来完全 顯影之感光性材質殘渣。最後，回流上述之微透鏡糎型之 第三感光性材質以形成微透鏡。 圖式簡單説明： 本發明的較佳實施例將於往後之説明文字中輔以下 -5- 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)The distance I of the final formed micro-lens can be accurately detected on the photo-sensing element. Finally, apply a positive photoresistance of 60. The substrate 10 of the photo-sensing element (ph0: de) in the figure includes a sand substrate 'CMOS, an oxygen layer, a metal wire, and a protective layer in this order from bottom to top. Because a region of the photo-sensing element substrate 10 has an area reserved as a spring platform plate (“Pad” 5 for connection with the lead frame. In the above-mentioned flat film, optical film 4. 'and the gap film,- At the same time, the parallel platform 15 is also covered, so it is positive photoresist 6. The shape of the photoresist can be removed during the development process when exposed, as shown in Figure-Β is the positive photoresist 60 after exposure after development Results. Next, please refer to Fig. 1C, W # melee, plasma etching to be reviewed by positive photoresistance:?, Film 5., thin light ... ㈣ Wiring ::: As shown in Fig. 1D, removing Residual, machine-made microlens material 70 at the connection level: "Talking about the comprehensive coating-after there is a mask, exposure and development process 2,000 gap film 5. Cut on top of the microlens prototype array Then, the microlens material can be formed as shown in the figure by reflowing the quality of the microlens material. The temperature of the hot-baking and reflowing process has several problems to be solved. ^ Lens The material 70 is applied to the gap film 50 and the wiring is a small drop of organic material. Therefore, the wiring platform board 15 and the 1 When the 5 is on the top, the organic material 70a at the junction of the two is not stacked on the substrate 3 of the inductive sensing element. The method of removing only the b ± ^ of the extended development is used to remove the organic material 70. Can be fully developed and T or enhanced exposure | 巳, but whether it is chosen as -3- This paper size is common Chinese National Standard (CNS) Λ4 specifications (----- ~! I n — ^ n II i U n ϋ I κ I nun I— n (Please read the notes on the back before filling out this page) The Intellectual Property Bureau of the Ministry of Economic Affairs and the 3Bigong Consumer Cooperative Co., Ltd. will print 4ll50i. The gap between some of the microlens heterotypes is larger than the predetermined critical dimension. In other words, the microlens formed by the heating reflow process becomes smaller. Secondly, if the above-mentioned prolonged development time or enhanced exposure energy is considered The factors that keep the gap between the micro-lens heterotypes small, but because the gap between the micro-lens prototypes is too small, it is not easy to remove the scum sandwiched between them. Therefore, micro-lens prototypes are generated during the reflow process. Type collapse, In addition, in the traditional method, the flattening process usually uses the same material as the electronic component, such as an oxide layer, to perform the flattening process. Then, the color filter material and the gap film material are coated. With microlens materials, f will use the engraving process for the part of the wiring platform board and use the lithography process in the microlens area. This will make the process steps must be performed in the lithography and engraving chambers. Therefore, for the above The present invention will provide a simplified manufacturing process and a method that can make the manufacturing process more tolerable. Aim and Summary of the Invention: One of the objects of the present invention is to simplify the manufacturing method of microlenses, especially in the protective layer. The subsequent process can be performed by lithographic process and a short-time residue removal step, which simplifies the tedious process of lithographic process and etching. Another object of the present invention is to solve the problem of residues between the gaps of microlens prototypes, which can be achieved without increasing the exposure energy or prolonging the development time. Therefore, the process window of the microlens process can be increased by 1 order. I " (Please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 scale (210X297 mm) 411501 a7 B7 V. Description of the invention () Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperative Printed plus. The invention discloses a method for enhancing the tolerance of a microlens manufacturing process. The method includes the following steps: first, providing a plurality of photo-sensing elements, and forming a wire connection and a protective layer in a predetermined microlens area, and exposing the microlens area; The substrate of the bonding pad; Next, a first photosensitive material is formed on the wires, the protective layer and the bonding pad to flatten the above surface, and then a lithography process is performed to remove the bonding pad. First photosensitive material. Then, a color filter film process is performed to form a color filter film on the micro lens area and remove the color filter film on the wiring platform at the same time. In order that the focal length of the microlens can be focused on the photo-sensing element, a second photosensitive material is coated on the color filter film and the wiring platform board as a spacer. A lithography process is performed to remove the second photosensitive material on the wiring platform board. The thickness of this gap film needs to be adjusted appropriately. In a preferred embodiment, the thickness is about 1.6 to 2.0 μm. Then, a third photosensitive material is formed on the surface of the above result to serve as a microlens. Next, photon exposure and development techniques are used to make the microlens areas form microlens prototypes, and the gap between each microlens prototype is about 1.0 to 1.3 μηι, and the third photosensitive material on the wiring platform board is Removed by the developer due to exposure. Next, before performing the hot baking to reflow the third photosensitive material f, the gap between the prototype of the microlenses and the terminal plate is completely removed with an oxygen-containing plasma to completely develop the residue of the photosensitive material. Finally, the third photosensitive material of the above microlens type is reflowed to form a microlens. Brief description of the drawings: The preferred embodiment of the present invention will be supplemented in the following explanatory text. -5- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the note on the back first) (Fill in this page again)
41150J A7 B7 五、發明説明（ 列圖形做更詳細的聞述： A顯不依據傳統方法形成正光阻於由下而上依 感測兀ί牛、保蠖層、氮化層 '彩色濾光膜 膜上的横截面示意圖； 陳 圖一 Β顯示依據傳統方法將接線平台板上的正 去除的撗截面示意圖： C顯示依據傳統方法以蝕刻方法去除接線平台 化層、彩色濾光膜及間隙膜； D顯示依據傳統方法形成微透鏡之横截面圖； 顯示以本蝥明之方法，㈣形成於光電惑測元伴 示意圖： 顯示以本發明之方法，以光阻平坦化底材之 示意圖； 顯示形成彩色遽光膜於光阻上的横截面示意 圖一 序為光電 圖一 板上的氮 圖一 圖二 的橫截面 圖三 之橫截面 圖四 132 » 圖， 圖五 圖； 圖六 圖七 攝之微透 經濟部智慧財產局負工消贲合作社印製 顯示形成間隙膜於彩色遽光膜上的横截面示意 顯示形成微透鏡能型的惙载面示意圖；及 A與圖七B分別顯不以掃描式電子顯微鏡所 鏡雛型及回流後之微透鏡的影像圖。 發明詳細説明： 有鑀於傳統方法微透鏡製程， x. 在微透鏡區域使用微影 製程。接線平台板區域使用蝕刻製 我心’這樣將使得製程步 本纸張尺度適用中國國家標準（CNS〉A4规格（210X297公釐） — ——till m n n —裂| in I~ n I n n n n M {請先聞讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製 411501 A7 B7五、發明説明（） 驟繁複。為了改善這種繁複步驟，本發明以光阻形成於護 層上，因此只需使用微影製程。 其次，傳統製程中在接線平台板和光電感測元件底材 之相衡接處的經常有光阻殘渣堆積，不易去除，需以加強 曝光的能量或時間或延長顯影的時間以使之完全顯影，而 這將會使得微透鏡陣列部分之微透鏡雛型彼此的間隙比預 定之臨界尺寸CD大。但如果考慮上述因素而把微透鏡雛型 彼此的間隙保留較小，卻又有因微透鏡雛型間隙太小而導 致央於其内的殘渣（scum)去除不易，導致回流程序中產生 微透鏡雛型崩塌，併在一起的危險算問題。本菸明所提供 之觀念則不f額外形成正光阻以進行蛀刻而件、在回流程序 之前先全面以電漿施以一短時間之去殘渣的步鞣。 以下的説明將配合以參表圖示來加以詳細説明本發 明的内容。本發明的細節如下： 如圖二所示的横截面示意圖顯示一半導體基板110上 已經由使用傳統製程形成複數個光電惑測元件1 1 5以隔離 區域112隔錐，其上並有保護層114包括氮化矽層、導線 連接及護層（passivation layer)於預定之微透鏡區120，以 一較佳的實施例而言，護層以氮化矽層為佳，因其有不錯 的透光率。微透鏡區120的旁邊則是曝露金屬表面的接線 平台板（bonding pad)118。 接著，請參考圖三所示的橫截面示意圖，形成一第一 感光性材質130塗怖於導線、及護層之上。以一較佳的實 施例而言，第一感光性材質130係一光阻層，例如 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家標準（CNS ) A4规格（210X297公釐） 411501 A7 B7 以另一次微影技術去除接線平台板1 1 8之 料 五、發明説明（ methacryl resin 或 acrylaie re 。 線之地形（t〇P〇graphy)，接著M ^ ^旦化竣層及金屬導 上之第一感光性材質。 微影技術去除接線平台板 請參考圖四所示的横截面示意圖 汾 膜140製程。-般而言—像素； 進仃杉色濾光 m东即需要有紅藍钹=厣隹， 此彩色涛光膜製程需要形成類似光阻之已染色-之有機材 料。在每-染色之有機材料形成之後即需進行微影。在經 過三次之微影製程後可在微透鏡區形成彩色遽光膜並同 時去除接線平台板上之有璣材料。 清參考五所示的横截面示意圖，為了使微透鏡之焦 距可以更有效聚焦於光電感測元件之上，一第二感光性材 質1 50塗怖於上述結果之表面上以做為間隙膜（spacer)。 這一層間隙膜之厚度需適當調整。以一較佳的實施例而 言’第二感光性材料150係一光阻，例如methacrylresin 或acrylateresin其中之一。厚度約為ι 6~2·0μπι。接著， 二感光性材 之後，請參考圖六，再形成一第三感光性材質160ί ^ ^ Λ . ., ^ < 以光覃（未圖示）逕行曝光及顯影技術 微透鏡區120形成微透鏡雛型16〇，每〆微透鏡難型之 隙 1 6 0 a 約為 1.0 〜1.3 μ m。 接著以含氧之電漿去除微透鏡雛盤之間隙及接線 台板上来完全顯影之感光性材質殘渣l6〇b及160c °本 -8- 本紙張Λ度適用中國國家梂準（CNS ) A4規格（210X297公釐） H. _ I ^ 訂 錄 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 成於間隙膜1 50及接線平台板丨i 8之上，β做為微透鏡 接著，以光覃（未圖示）逕行曝I SS蕺技術以使得預.定 411501 A7 B7 五、發明説明（） 經濟部智慧財產局員工消費合作社印製 驟由於不f額外的微影步驟，因此，與傳統方法比較更為 簡單。以一較佳的實施例而言，電t處理的時間僅需約 15〜30秒即可。 圖七A及圖七B則分別示以本發明之方法形成微透鏡 回流前與之後以掃描式電子顯微鏡拍攝的影像圖。 最後，回流上述之微透鏡雛型之第三感光性材質以形 成微透鏡。熱回流製程之溫度以一較佳的實施例而言，約 為155〜165 °C。這一溫度係高於第三感光性材質之破璃轉 化溫度（glass transition temperature) 〇 本發明具有以下之優點： (1) 本發明所提供之方法，在護層形成之後的微透镜製程 步驟即只需微影製程，因此製程較簡覃。 (2) 本發明在形成微透鏡雛型之步驟，可以以一般的曝光 時間及能量進行即可，勿f額外之曝光時間或能量， 因為顯影後本發明係以電漿做短時間之清除光阻殘 渣，因此，不必顧慮微透鏡鎚型因間隙内光阻造成微 透鏡併在一起的問題，因此可以使得微透鏡雛型的間 隙更為接近臨界尺寸。 以上所述僅為本發明之較佳實施例而已，並非用以限 定本發明之申請專利範圍；凡其它未脱離本發明所揭示之 精神下所完成之箄效改變或修飾，均應包含在下述之申請 專利範@内。 -9- 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） —--------裝-- (請先閱讀背面之注意事項再填寫本頁) 、-* ^41150J A7 B7 V. Description of the invention (Column graphics for a more detailed description: A shows that the positive photoresist is not formed in accordance with the traditional method, and the bottom-up sensor is used to sense the light, film, nitride layer, and nitride layer. A schematic cross-sectional view of the film; Chen Tuyi B shows a schematic cross-section diagram of the positively-contaminated plutonium on the wiring platform board according to the traditional method: C shows that the wiring platform layer, the color filter film and the gap film are removed by an etching method according to the traditional method; D shows a cross-sectional view of a microlens formed according to a conventional method; shows a schematic diagram of the method of this invention, which is formed on a photoelectric cell; shows a schematic diagram of flattening a substrate with a photoresist by the method of the present invention; shows a color The schematic diagram of the cross-section of the photoresist film on the photoresist is sequenced as the nitrogen map on the photo board, the cross section on the second board, the cross section on the third board, and the cross section on the third board. Figure 132 Printed by the Ministry of Economic Affairs and Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Affairs Cooperative, showing the formation of a gap film on the color phosphor film, the cross-sectional view schematically shows the formation of a microlens energy bearing surface; and A and Figure 7B The micrographs of the prototype and the reflowed microlens imaged by the scanning electron microscope are displayed separately. Detailed description of the invention: The microlens process is based on the traditional method, x. The lithography process is used in the microlens area. The connection platform plate area Use etching to make my heart. This will make the paper size of the process steps applicable to Chinese national standards (CNS> A4 specification (210X297 mm) — ——till mnn —crack | in I ~ n I nnnn M {Please read the back first Please fill in this page again for attention} Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 411501 A7 B7 V. The description of the invention is complicated. In order to improve this complicated step, the present invention is formed on the protective layer with photoresist, so only The lithography process is required. Second, in the traditional process, photoresist residues often accumulate at the junction of the connection platform board and the substrate of the photo-sensing element, which is not easy to remove. It is necessary to increase the exposure energy or time or extend the development time. Time to make it fully developed, and this will make the gap between the microlens prototypes of the microlens array part larger than the predetermined critical size CD. But if the above factors are considered The gap between the microlens prototypes has been kept small, but the small scum in the microlens prototype gap is too difficult to remove, which causes the microlens prototype to collapse during the reflow process. The dangers are counted together. The concept provided by this smoke is not to form an additional positive photoresist for engraving and parts. Before the reflow process, firstly apply a short period of time to remove residue from the plasma. The following description will be used to describe the content of the present invention in detail with reference to the table diagrams. The details of the present invention are as follows: The cross-sectional schematic diagram shown in FIG. 2 shows that a plurality of photovoltaic devices have been formed on a semiconductor substrate 110 by using a conventional process. The measuring element 1 1 5 is separated by a separation region 112, and a protective layer 114 includes a silicon nitride layer, a wire connection and a passivation layer in a predetermined micro lens area 120. According to a preferred embodiment, In other words, the protective layer is preferably a silicon nitride layer because of its good light transmittance. Next to the microlens area 120 is a bonding pad 118 that exposes a metal surface. Next, referring to the schematic cross-sectional view shown in FIG. 3, a first photosensitive material 130 is formed and coated on the wires and the protective layer. In a preferred embodiment, the first photosensitive material 130 is a photoresist layer, for example (please read the precautions on the back before filling this page) This paper uses the Chinese National Standard (CNS) A4 specification ( 210X297 mm) 411501 A7 B7 Use another lithography technique to remove the material of the wiring platform board 1 1 8 V. Description of the invention (methacryl resin or acrylie re. Topography of the line, then M ^ ^) The first photosensitive material on the finished layer and the metal guide. For the lithography technology to remove the wiring platform board, please refer to the cross-sectional schematic diagram of the Fen film 140 process shown in Figure 4.-In general-the pixel; That is to say, there is a need for red and blue 厣 隹 = 厣 隹. This color wave film process needs to form a photoresist-like dyed-organic material. After each-dyed organic material is formed, lithography is required. After three times of lithography After the manufacturing process, a colored chirped film can be formed in the microlens area and the chirped material on the wiring platform board can be removed at the same time. Refer to the cross-sectional diagram shown in Figure 5. In order to make the focal length of the microlens more focused on the optical sensor on A second photosensitive material 150 is coated on the surface of the above result as a spacer. The thickness of this layer of the spacer film needs to be adjusted appropriately. In a preferred embodiment, the 'second photosensitive material' 150 is a photoresist, such as one of methacrylresin or acrylateresin. The thickness is about ι 6 ~ 2 · 0μπι. Then, after the two photosensitive materials, please refer to FIG. 6 to form a third photosensitive material 160 ^ ^ ^. ., ^ < The light lens (not shown) is used for exposure and development. The micro lens area 120 forms a micro lens prototype 160, and the gap between each micro lens difficult shape 160 a is about 1.0 to 1.3 μm. Then the oxygen-containing plasma was used to remove the gap between the microlens plate and the photoresist material residues 160b and 160c fully developed on the terminal board. This -8- This paper Λ degree is applicable to China National Standard (CNS) A4 specifications. (210X297 mm) H. _ I ^ Ordering (please read the precautions on the back before filling this page) Printed on the gap film 1 50 and the wiring platform board 丨 i 8 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs , Β is used as a microlens, followed by light Qin (not shown) Exposure of I SS 蕺 technology to make the pre-determined 411501 A7 B7 V. Description of the invention () The printing step of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy does not require additional lithography steps, so it is simpler than the traditional method. In a preferred embodiment, the time required for the electrical treatment is only about 15 to 30 seconds. Figure 7A and Figure 7B respectively show the scanning method before and after the microlens is formed by the method of the present invention. Image taken by an electron microscope. Finally, the third photosensitive material of the above microlens prototype is reflowed to form a microlens. In a preferred embodiment, the temperature of the thermal reflow process is about 155 ° C to 165 ° C. This temperature is higher than the glass transition temperature of the third photosensitive material. The present invention has the following advantages: (1) In the method provided by the present invention, the microlens manufacturing process steps after the formation of the protective layer are: Only the lithography process is required, so the process is relatively simple. (2) The step of forming the prototype of the microlens of the present invention can be performed with ordinary exposure time and energy. Do not add extra exposure time or energy, because the invention uses plasma to remove light for a short time after development. Therefore, there is no need to worry about the problem that the microlens hammers together with the microlenses due to the light resistance in the gap, so the gap of the microlens prototype can be closer to the critical size. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application of the present invention; all other effective changes or modifications made without departing from the spirit disclosed by the present invention should be included in the following The application patents mentioned in @ 内. -9- This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297mm) —-------- Installation— (Please read the precautions on the back before filling this page) 、-* ^