JP2000307090A - Solid-state image sensing device microlens array, solid- state image sensing device provided with it, and method of manufacturing them - Google Patents
Solid-state image sensing device microlens array, solid- state image sensing device provided with it, and method of manufacturing themInfo
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- JP2000307090A JP2000307090A JP11109798A JP10979899A JP2000307090A JP 2000307090 A JP2000307090 A JP 2000307090A JP 11109798 A JP11109798 A JP 11109798A JP 10979899 A JP10979899 A JP 10979899A JP 2000307090 A JP2000307090 A JP 2000307090A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はマイクロレンズアレ
イを設けた固体撮像素子に関し、特に光の利用効率を向
上させるマイクロレンズアレイに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device provided with a microlens array, and more particularly to a microlens array for improving light use efficiency.
【０００２】[0002]
【従来の技術】固体光電変換素子は、一般に半導体基板
上に受光部と電荷転送部とが設けられ、受光部で光電交
換された電荷を電荷転送部に転送する構成となってい
る。このため、半導体基板上の１００％の領域を受光部
とすることができない。受光部の受光効率を向上させる
方法として、水平方向、垂直方向に二次元的に配置され
たフォトダイオードからなる受光部上にマイクロレンズ
アレイを形成し、受光部に集光させることで、固体撮像
素子の感度を向上させている。2. Description of the Related Art In general, a solid-state photoelectric conversion element has a structure in which a light receiving section and a charge transfer section are provided on a semiconductor substrate, and the charge photoelectrically exchanged by the light receiving section is transferred to the charge transfer section. For this reason, 100% of the region on the semiconductor substrate cannot be used as the light receiving section. As a method of improving the light receiving efficiency of the light receiving unit, solid-state imaging is performed by forming a microlens array on the light receiving unit consisting of photodiodes arranged two-dimensionally in the horizontal and vertical directions and condensing it on the light receiving unit. The sensitivity of the device has been improved.
【０００３】図３に光電変換素子上にマイクロレンズア
レイを形成した従来の固体撮像素子の一例を模式的に示
す部分断面図を、図４（ａ）〜（ｅ）に従来の固体撮像
素子の製造工程を模式的に示す部分断面図を示す。２１
はシリコンからなる半導体基板、２２はフォトダイオー
ドからなる受光部、２３は遮光部、２４は平坦化層、２
５は色分解用のカラーフィルター層、２６はオーバーコ
ート層、２７は溝、３２ｂはマイクロレンズ、３３はマ
イクロレンズアレイ、２００はマイクロレンズアレイが
形成された固体撮像素子である。FIG. 3 is a partial cross-sectional view schematically showing an example of a conventional solid-state imaging device in which a microlens array is formed on a photoelectric conversion element, and FIGS. 4 (a) to 4 (e) show the conventional solid-state imaging device. FIG. 2 is a partial cross-sectional view schematically showing a manufacturing process. 21
Is a semiconductor substrate made of silicon, 22 is a light receiving part made of a photodiode, 23 is a light shielding part, 24 is a flattening layer,
Reference numeral 5 denotes a color filter layer for color separation, 26 denotes an overcoat layer, 27 denotes a groove, 32b denotes a microlens, 33 denotes a microlens array, and 200 denotes a solid-state imaging device on which a microlens array is formed.
【０００４】入射光はマイクロレンズ３２ｂで集光さ
れ、オーバーコート層２６、カラーフイルター層２５及
び平坦化層２４を通り受光部２２に入射し、入射光量に
応じて電荷に変換され電荷転送される。このとき、入射
光の全部が受光部２２上に入射しないで遮光部２３上に
も入射し、この遮光部２３上に入射した光量は電荷に変
換されないで、固体撮像素子の感度低下を招く一要因に
なっている。The incident light is condensed by the microlenses 32b, enters the light receiving section 22 through the overcoat layer 26, the color filter layer 25, and the flattening layer 24, is converted into electric charge according to the amount of incident light, and is transferred. . At this time, all of the incident light does not enter the light receiving unit 22 but also enters the light shielding unit 23, and the amount of light incident on the light shielding unit 23 is not converted into electric charge, which causes a decrease in sensitivity of the solid-state imaging device. It is a factor.
【０００５】従来の固体撮像素子の製造方法は、図４
（ａ）〜（ｅ）に示すように、半導体基板２１に受光部
２２、遮光部２３、平坦化層２４、色分解用のカラーフ
ィルター層２５及びオーバーコート層２６を順次形成し
た光電変換素子２０のオーバーコート層２６上にレジス
トパターン３１を形成し、オーバーコート層２６をドラ
イエッチングして溝２７を形成する。さらに、レジスト
パターン３１を剥離した後溝２７が形成されたオーバー
コート層２６上にレンズ形成層３２を形成し、パターニ
ング処理して溝２７間にレンズ形成パターン層３２ａを
形成する。さらに、レンズ形成パターン層３２ａを加熱
処理して熱フローさせてマイクロレンズ３２ｂを形成
し、マイクロレンズアレイ３３が形成された固体撮像素
子２００を得る。ここで、この溝２７はマイクロレンズ
３２ｂがくっつかない様にする堰の役目をしていると同
時にマイクロレンズ３２ｂの裾野形状を所望の形状にす
る役目も併せもっている。しかし、この溝２７はプロセ
ス上最低限の幅が必要で、且つ溝形状がエッチング工程
でバラツキを示すため、光学的にみた場合マイクロレン
ズアレイの光学充填率（画素に対するマイクロレンズの
占める割合）を下げることになり受光部２２上の受光効
率を下げ、固体撮像素子の感度低下を招く一要因になっ
ている。[0005] A conventional method of manufacturing a solid-state image sensor is shown in FIG.
As shown in (a) to (e), a photoelectric conversion element 20 in which a light receiving unit 22, a light shielding unit 23, a flattening layer 24, a color filter layer 25 for color separation, and an overcoat layer 26 are sequentially formed on a semiconductor substrate 21. A resist pattern 31 is formed on the overcoat layer 26, and the overcoat layer 26 is dry-etched to form a groove 27. Further, after the resist pattern 31 is removed, a lens forming layer 32 is formed on the overcoat layer 26 in which the groove 27 is formed, and a patterning process is performed to form a lens forming pattern layer 32 a between the grooves 27. Further, the lens forming pattern layer 32a is subjected to a heat treatment to cause a heat flow to form the microlenses 32b, thereby obtaining the solid-state imaging device 200 on which the microlens array 33 is formed. Here, the groove 27 serves as a weir for preventing the microlenses 32b from sticking together, and also serves to make the foot shape of the microlenses 32b a desired shape. However, since the groove 27 requires a minimum width in the process and the groove shape shows a variation in the etching process, the optical filling rate (the ratio of the microlens to the pixel) of the microlens array is optically viewed from an optical point of view. As a result, the light receiving efficiency on the light receiving section 22 is reduced, which is one factor that causes a decrease in the sensitivity of the solid-state imaging device.
【０００６】さらに、従来の製造方法では、光電変換素
子２０のオーバーコート層２６に溝２７を形成するため
のレジストパターン形成工程及びエッチング工程が必要
であり、マイクロレンズアレイ及び固体撮像素子のコス
トアップの一要因になっている。Further, in the conventional manufacturing method, a resist pattern forming step and an etching step for forming the groove 27 in the overcoat layer 26 of the photoelectric conversion element 20 are required, which increases the cost of the microlens array and the solid-state imaging device. Is one of the factors.
【０００７】[0007]
【発明が解決しようとする課題】本発明は上記問題点に
鑑み考案されたもので、光電変換素子の受光部の受光効
率を上げ、固体撮像装置の感度や画質を向上できるマイ
クロレンズアレイ及び固体撮像素子を提供することを目
的とする。SUMMARY OF THE INVENTION The present invention has been devised in view of the above problems, and has a microlens array and a solid-state imaging device capable of increasing the light-receiving efficiency of a light-receiving section of a photoelectric conversion element and improving the sensitivity and image quality of a solid-state imaging device. It is an object to provide an imaging device.
【０００８】[0008]
【課題を解決するための手段】本発明に於いて上記課題
を達成するために、まず請求項１においては、水平方向
と垂直方向に二次元的に配置された受光部を固体撮像素
子上に形成されたマイクロレンズアレイにおいて、熱フ
ロー性の低い下地パターン層と熱フロー性の高いマイク
ロレンズの２層で構成されていることを特徴とする固体
撮像素子用マイクロレンズアレイとしたものである。In order to achieve the above object, according to the present invention, first, a light receiving section two-dimensionally arranged in a horizontal direction and a vertical direction is provided on a solid-state image sensor. The formed microlens array is a microlens array for a solid-state imaging device, characterized in that the microlens array is composed of two layers, a base pattern layer having a low heat flow property and a microlens having a high heat flow property.
【０００９】また、請求項２においては、請求項１に記
載の固体撮像素子用マイクロレンズアレイを設けたこと
を特徴とする固体撮像素子としたものである。According to a second aspect of the present invention, there is provided a solid-state imaging device including the microlens array for a solid-state imaging device according to the first aspect.
【００１０】さらにまた、請求項３においては、以下の
工程を有することを特徴とする請求項１又は請求項２に
記載の固体撮像素子用マイクロレンズアレイ及び固体撮
像素子の製造方法としたものである。 （ａ）シリコンからなる半導体基板に受光部、遮光部、
平坦化層、カラーフイルター層及びオーバーコート層を
形成してなる固体光電変換素子の前記オーバーコート層
上に感光性樹脂を塗布して感光層からなる下地層を形成
する工程。 （ｂ）前記下地層をパターン露光、現像等のパターニン
グ処理した後波長３５０ｎｍ以下の紫外線を照射して下
地パターン層を形成する工程。 （ｃ）前記下地パターン層上に感光性樹脂を塗布して感
光層からなるレンズ形成層を形成し、パターン露光、現
像等のパターニング処理した後波長３５０ｎｍ〜４００
ｎｍの紫外線を照射してレンズ形成パターン層を形成す
る工程。 （ｄ）前記レンズ形成パターン層を加熱フローしてマイ
クロレンズを形成し、マイクロレンズアレイが形成され
た固体撮像素子を作製する工程。Further, the present invention provides a method for manufacturing a microlens array for a solid-state image sensor and a solid-state image sensor according to claim 1 or 2, wherein the method comprises the following steps. is there. (A) A light receiving section, a light shielding section,
A step of applying a photosensitive resin on the overcoat layer of the solid-state photoelectric conversion element having the flattening layer, the color filter layer, and the overcoat layer formed thereon to form a base layer made of a photosensitive layer. (B) a step of forming a base pattern layer by irradiating ultraviolet light having a wavelength of 350 nm or less after patterning the base layer by pattern exposure, development and the like; (C) A photosensitive resin is applied on the base pattern layer to form a lens forming layer composed of a photosensitive layer, and after patterning processing such as pattern exposure and development, the wavelength is 350 nm to 400 nm.
forming a lens forming pattern layer by irradiating ultraviolet rays of nm. (D) a step of heating the flow of the lens formation pattern layer to form microlenses, and manufacturing a solid-state imaging device having a microlens array formed thereon.
【００１１】[0011]
【発明の実施の形態】以下本発明の実施の形態につき説
明する。図１は本発明の固体撮像素子用マイクロレンズ
アレイ及びそれを用いた固体撮像素子の一実施例を模式
的に示した部分断面図、図２（ａ）〜（ｅ）は本発明の
固体撮像素子用マイクロレンズアレイ及びそれを用いた
固体撮像素子の製造工程の一実施例を模式的に示した部
分断面図である。Embodiments of the present invention will be described below. FIG. 1 is a partial cross-sectional view schematically showing an embodiment of a microlens array for a solid-state imaging device according to the present invention and a solid-state imaging device using the same, and FIGS. 2A to 2E are solid-state imaging devices according to the present invention. FIG. 3 is a partial cross-sectional view schematically showing one embodiment of a microlens array for an element and a manufacturing process of a solid-state imaging element using the same.
【００１２】本発明は、図１に示すように、固体光電変
換素子１０上のオーバーコート層１６上に下地パターン
層２１ａを形成し、この下地パターン層２１ａ上にマイ
クロレンズ２２ｂを熱フローにて形成するので、下地パ
ターン層２１ａを精度良く形成してやれば均一な形状の
マイクロレンズ２２ｂが得られるようにしたものであ
る。In the present invention, as shown in FIG. 1, a base pattern layer 21a is formed on an overcoat layer 16 on a solid-state photoelectric conversion element 10, and a microlens 22b is formed on the base pattern layer 21a by a heat flow. Since the underlayer pattern layer 21a is formed with high precision, the microlenses 22b having a uniform shape can be obtained.
【００１３】以下本発明の固体撮像素子用マイクロレン
ズアレイ及び固体撮像素子の形成方法について図２
（ａ）〜（ｅ）を用いて説明する。まず、フォトダイオ
ードからなる受光部１２及びアルミニウムからなる遮光
部１３が形成された半導体基板１１上にアクリル系樹脂
溶液をスピンナーで塗布し、所定厚の平坦化層１４を形
成する。FIG. 2 shows a microlens array for a solid-state imaging device and a method of forming the solid-state imaging device according to the present invention.
This will be described with reference to (a) to (e). First, an acrylic resin solution is applied by a spinner on the semiconductor substrate 11 on which the light receiving part 12 made of a photodiode and the light shielding part 13 made of aluminum are formed, thereby forming a flattening layer 14 having a predetermined thickness.
【００１４】次に、平坦化層１４上に、感光性顔料溶液
をスピンナーで塗布し、所定厚の感光性顔料層を形成
し、パターニング処理して、受光部上に一色目のカラー
フィルターを形成する。順次この工程を繰り返し、二色
目、三色目のカラーフィルターを形成し、Ｒｅｄ、Ｇｒ
ｅｅｎ、Ｂｌｕｅからなる３色のカラーフィルター層１
５を形成するNext, a photosensitive pigment solution is applied on the flattening layer 14 by a spinner to form a photosensitive pigment layer having a predetermined thickness, and is patterned to form a first color filter on the light receiving portion. I do. This process is sequentially repeated to form a second color filter and a third color filter, and Red, Gr
color filter layer 1 of three colors consisting of eeen and Blue
Form 5
【００１５】次に、カラーフィルター層１５上にアクリ
ル系樹脂溶液をスピンナーで回転塗布し、所定厚のオー
バーコート層１６を形成し、固体光電変換素子１０を得
る。Next, an acrylic resin solution is spin-coated on the color filter layer 15 with a spinner to form an overcoat layer 16 having a predetermined thickness, and the solid-state photoelectric conversion element 10 is obtained.
【００１６】次に、オーバーコート層１６上に感光性樹
脂を塗布し、感光層からなる下地層２１を形成し、所定
のパターン露光を行ってパターニング処理した後波長３
５０ｎｍ以下の紫外線を全面露光して、下地パターン層
２１ａを形成する。この露光工程は下地パターン層２１
ａを硬化させると同時に、感光基を分解させ、透明度を
向上させることができ、且つ熱フロー性を低くできる。Next, a photosensitive resin is applied on the overcoat layer 16 to form an underlayer 21 made of a photosensitive layer.
The entire surface is exposed to ultraviolet light of 50 nm or less to form the underlying pattern layer 21a. This exposure step is performed in the underlying pattern layer 21.
At the same time as curing a, the photosensitive group can be decomposed, the transparency can be improved, and the heat flow property can be lowered.
【００１７】次に、オーバーコート層１６及び下地パタ
ーン層２１ａ上に感光性樹脂を塗布し、感光層からなる
レンズ形成層２２を形成し、所定のパターン露光、現像
等のパターニング処理を行って、波長３５０ｎｍ〜４０
０ｎｍの紫外線を露光して下地パターン層２１ａ上にレ
ンズ形成パターン層２２ａを形成する。さらに、レンズ
形成パターン層２２ａを加熱フローさせて、下地パター
ン層２１ａとほぼ同じ大きさのマイクロレンズ２２ｂを
形成し、固体撮像素子用マイクロレンズアレイ２３が形
成された固体撮像素子１００を得ることができる。Next, a photosensitive resin is applied on the overcoat layer 16 and the underlying pattern layer 21a to form a lens forming layer 22 made of a photosensitive layer, and a patterning process such as predetermined pattern exposure and development is performed. Wavelength 350nm-40
The lens forming pattern layer 22a is formed on the underlying pattern layer 21a by exposing to 0 nm ultraviolet light. Further, the lens forming pattern layer 22a is heated and flow-formed to form the microlenses 22b having substantially the same size as the underlying pattern layer 21a, thereby obtaining the solid-state imaging device 100 on which the solid-state imaging device microlens array 23 is formed. it can.
【００１８】このように下地パターン層２１ａ上に熱フ
ロー性の異なるレンズ形成パターン層２２ａを形成し
て、レンズ形成パターン層２２ａを加熱フローしてマイ
クロレンズ２２ｂを形成すると、形状再現性の良いマイ
クロレンズ及びマイクロレンズ間のギャップを精度良く
制御したマイクロレンズアレイ２３が得られる。As described above, when the lens forming pattern layer 22a having a different heat flow property is formed on the base pattern layer 21a, and the lens forming pattern layer 22a is heated to flow to form the microlenses 22b, the microlenses 22b having good shape reproducibility can be obtained. The microlens array 23 in which the gap between the lens and the microlens is accurately controlled can be obtained.
【００１９】[0019]
【実施例】以下実施例により本発明を詳細に説明する。
まず、フォトダイオードからなる受光部１２及びアルミ
ニウムからなる遮光部１３が形成された半導体基板１１
上にアクリル系樹脂溶液をスピンナーで塗布し、所定厚
の平坦化層１４を形成した。The present invention will be described in detail with reference to the following examples.
First, a semiconductor substrate 11 on which a light receiving part 12 made of a photodiode and a light shielding part 13 made of aluminum are formed.
An acrylic resin solution was applied on the top with a spinner to form a flattening layer 14 having a predetermined thickness.
【００２０】次に、平坦化層１４上に感光性顔料溶液を
スピンナーで塗布し、所定厚の感光性顔料層を形成し、
パターニング処理して、受光部に対応する位置に一色目
のカラーフィルターを形成した。順次この工程を繰り返
し、二色目、三色目のカラーフィルターを形成し、Ｒｅ
ｄ、Ｇｒｅｅｎ、Ｂｌｕｅからなる３色のカラーフィル
ター層１５を形成したNext, a photosensitive pigment solution is applied on the flattening layer 14 with a spinner to form a photosensitive pigment layer having a predetermined thickness.
By patterning, a first color filter was formed at a position corresponding to the light receiving section. This process is sequentially repeated to form a second color filter and a third color filter.
Three color filter layers 15 of d, Green, and Blue were formed.
【００２１】次に、カラーフィルター層１５上にアクリ
ル系樹脂溶液をスピンナーで回転塗布し、所定厚のオー
バーコート層１６を形成し、固体光電変換素子１０を得
た。Next, an acrylic resin solution was spin-coated on the color filter layer 15 with a spinner to form an overcoat layer 16 having a predetermined thickness, and the solid-state photoelectric conversion element 10 was obtained.
【００２２】次に、ポジ型レジスト（ＭＦＲ−３５４：
ＪＳＲ（株）製）をスピンナーで回転塗布し、０.４０
μｍ厚の感光層からなる下地層２１を形成した。所定の
パターンを有するフォトマスクを使ってパターン露光、
現像等のパターニング処理して、波長３５０ｎｍ以下の
紫外線を照射して５μｍ角で下地パターン層間ギャップ
が０.３５μｍの下地パターン層２１ａを形成した。Next, a positive resist (MFR-354:
(JSR Co., Ltd.) and spin-coated with a spinner, 0.40
An underlayer 21 composed of a photosensitive layer having a thickness of μm was formed. Pattern exposure using a photomask having a predetermined pattern,
By patterning such as development, ultraviolet rays having a wavelength of 350 nm or less were irradiated to form an underlayer pattern layer 21a having a square of 5 μm and an underlayer interlayer gap of 0.35 μm.
【００２３】次に、ポジ型レジスト（ＭＦＲ−３５４：
ＪＳＲ（株）製）をスピンナーで回転塗布し、１.０μ
ｍ厚の感光層からなるレンズ形成層２２を形成した。さ
らに、所定のパターンを有するフォトマスクを使ってパ
ターン露光、現像等のパターニング処理して、波長３５
０ｎｍ〜４００ｎｍの紫外線を照射して下地パターン層
２１ａ上に４.５μｍ角のレンズ形成パターン層２２ａ
を形成した。Next, a positive resist (MFR-354:
JSR Co., Ltd.) spin-coated with a spinner and 1.0μ
A lens forming layer 22 composed of a photosensitive layer having a thickness of m was formed. Further, a patterning process such as pattern exposure and development is performed using a photomask having a predetermined pattern to obtain a wavelength 35 nm.
By irradiating ultraviolet rays of 0 nm to 400 nm, a 4.5 μm square lens forming pattern layer 22 a is formed on the underlying pattern layer 21 a.
Was formed.
【００２４】さらに、レンズ形成パターン層２２ａを１
３０℃で加熱処理し、熱フローを起こさせて下地パター
ン層２１ａとほぼ同じ大きさの５.０μｍ角のマイクロ
レンズ２２ｂを形成し、固体撮像素子用マイクロレンズ
アレイ２３が形成された固体撮像素子１００を得た。Further, the lens forming pattern layer 22a is
A solid-state imaging device in which a heat treatment is performed at 30 ° C. to generate a heat flow to form a 5.0 μm square microlens 22 b having substantially the same size as the underlying pattern layer 21 a, and the solid-state imaging device microlens array 23 is formed. 100 was obtained.
【００２５】[0025]
【発明の効果】上記したように、本発明の固体撮像素子
用マイクロレンズアレイの構成及び製造方法によると均
一で形状再現性の良いマイクロレンズアレイが得られ、
固体光電変換素子の受光部の受光効率を上げることがで
き、固体撮像素子の感度向上に寄与できる。さらに、固
体光電変換素子上のオーバーコート層に溝を形成するエ
ッチング工程が省けるため、製造コストの低減を計るこ
とができる。As described above, according to the structure and the manufacturing method of the microlens array for a solid-state imaging device of the present invention, a microlens array with uniform and good shape reproducibility can be obtained.
The light receiving efficiency of the light receiving section of the solid-state photoelectric conversion element can be increased, and the sensitivity of the solid-state imaging element can be improved. Further, since an etching step for forming a groove in the overcoat layer on the solid-state photoelectric conversion element can be omitted, manufacturing cost can be reduced.
【図１】本発明の固体撮像素子用マイクロレンズアレイ
及び固体撮像素子の一実施例を模式的に示した部分断面
図である。FIG. 1 is a partial cross-sectional view schematically showing one embodiment of a microlens array for a solid-state imaging device and a solid-state imaging device according to the present invention.
【図２】（ａ）〜（ｅ）は、本発明の固体撮像素子用マ
イクロレンズアレイ及び固体撮像素子の一実施例の製造
工程を模式的に示した部分断面図である。FIGS. 2A to 2E are partial cross-sectional views schematically showing manufacturing steps of an embodiment of a microlens array for a solid-state imaging device and a solid-state imaging device according to the present invention.
【図３】従来の固体撮像素子用マイクロレンズアレイ及
び固体撮像素子の一例を模式的に示した部分断面図であ
る。FIG. 3 is a partial cross-sectional view schematically illustrating an example of a conventional microlens array for a solid-state imaging device and a solid-state imaging device.
【図４】（ａ）〜（ｅ）は、従来の固体撮像素子用マイ
クロレンズアレイ及び固体撮像素子の製造工程を模式的
に示した部分断面図である。FIGS. 4A to 4E are partial cross-sectional views schematically showing a conventional manufacturing process of a microlens array for a solid-state imaging device and a solid-state imaging device.
１０、２０……固体光電変換素子 １１……半導体基板 １２……受光部 １３……遮光部 １４……平坦化層 １５……カラーフィルター層 １６……オーバーコート層 ２１……下地層 ２１ａ……下地パターン層 ２２、３２……レンズ形成層 ２２ａ、３２ａ……レンズ形成パターン層 ２２ｂ、３２ｂ……マイクロレンズ ２３、３３……マイクロレンズアレイ ２６……オーバーコート層 ２７……溝 ３１……レジストパターン １００、２００……マイクロレンズアレイが形成された
固体撮像素子10, 20 solid-state photoelectric conversion element 11 semiconductor substrate 12 light-receiving part 13 light-shielding part 14 flattening layer 15 color filter layer 16 overcoat layer 21 base layer 21a Base pattern layers 22, 32 Lens forming layers 22a, 32a Lens forming pattern layers 22b, 32b Microlenses 23, 33 Microlens array 26 Overcoat layer 27 Groove 31 Resist pattern 100, 200... Solid-state imaging device on which microlens array is formed
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/30 ５７３ Ｆターム(参考） 4M118 AA10 AB01 BA09 CA02 FA06 GB03 GB07 GB11 GC08 GD04 GD07 5C024 AA01 CA12 CA31 DA01 EA04 FA01 FA12 GA01 5F046 NA05 NA14 NA19 PA12 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 573 F term (Reference) 4M118 AA10 AB01 BA09 CA02 FA06 GB03 GB07 GB11 GC08 GD04 GD07 5C024 AA01 CA12 CA31 DA01 EA04 FA01 FA12 GA01 5F046 NA05 NA14 NA19 PA12
Claims (3)
た受光部を有する固体撮像素子上に形成されたマイクロ
レンズアレイにおいて、熱フロー性の低い下地パターン
層と熱フロー性の高いマイクロレンズの２層で構成され
ていることを特徴とする固体撮像素子用マイクロレンズ
アレイ。In a microlens array formed on a solid-state imaging device having a light receiving portion two-dimensionally arranged in a horizontal direction and a vertical direction, a micropattern pattern layer having a low heat flow property and a micro layer having a high heat flow property are provided. A microlens array for a solid-state imaging device, comprising two layers of lenses.
レンズアレイを設けたことを特徴とする固体撮像素子。2. A solid-state imaging device comprising the microlens array for a solid-state imaging device according to claim 1.
項１又は請求項２に記載の固体撮像素子用マイクロレン
ズアレイ及び固体撮像素子の製造方法。 （ａ）シリコンからなる半導体基板に受光部、遮光部、
平坦化層、カラーフイルター層及びオーバーコート層を
形成してなる固体光電変換素子の前記オーバーコート層
上に感光性樹脂を塗布して感光層からなる下地層を形成
する工程。 （ｂ）前記下地層をパターン露光、現像等のパターニン
グ処理した後波長３５０ｎｍ以下の紫外線を照射して下
地パターン層を形成する工程。 （ｃ）前記下地パターン層上に感光性樹脂を塗布して感
光層からなるレンズ形成層を形成し、パターン露光、現
像等のパターニング処理した後波長３５０ｎｍ〜４００
ｎｍの紫外線を照射してレンズ形成パターン層を形成す
る工程。 （ｄ）前記レンズ形成パターン層を加熱フローしてマイ
クロレンズを形成し、マイクロレンズアレイが形成され
た固体撮像素子を作製する工程。3. The method of manufacturing a microlens array for a solid-state imaging device and the solid-state imaging device according to claim 1, comprising the following steps. (A) A light receiving section, a light shielding section,
A step of applying a photosensitive resin on the overcoat layer of the solid-state photoelectric conversion element having the flattening layer, the color filter layer, and the overcoat layer formed thereon to form a base layer made of a photosensitive layer. (B) a step of forming a base pattern layer by irradiating ultraviolet light having a wavelength of 350 nm or less after patterning the base layer by pattern exposure, development and the like; (C) A photosensitive resin is applied on the base pattern layer to form a lens forming layer composed of a photosensitive layer, and after patterning processing such as pattern exposure and development, the wavelength is 350 nm to 400 nm.
forming a lens forming pattern layer by irradiating ultraviolet rays of nm. (D) a step of heating the flow of the lens formation pattern layer to form microlenses, and manufacturing a solid-state imaging device having a microlens array formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11109798A JP2000307090A (en) | 1999-04-16 | 1999-04-16 | Solid-state image sensing device microlens array, solid- state image sensing device provided with it, and method of manufacturing them |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11109798A JP2000307090A (en) | 1999-04-16 | 1999-04-16 | Solid-state image sensing device microlens array, solid- state image sensing device provided with it, and method of manufacturing them |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000307090A true JP2000307090A (en) | 2000-11-02 |
Family
ID=14519497
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11109798A Pending JP2000307090A (en) | 1999-04-16 | 1999-04-16 | Solid-state image sensing device microlens array, solid- state image sensing device provided with it, and method of manufacturing them |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000307090A (en) |
Cited By (9)
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| US6586811B2 (en) | 2000-04-07 | 2003-07-01 | Canon Kabushiki Kaisha | Microlens, solid state imaging device, and production process thereof |
| JP2004235635A (en) * | 2003-01-29 | 2004-08-19 | Hynix Semiconductor Inc | Method of manufacturing cmos image sensor |
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| US7024093B2 (en) | 2002-12-02 | 2006-04-04 | Shipley Company, Llc | Methods of forming waveguides and waveguides formed therefrom |
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| KR100780544B1 (en) | 2007-10-25 | 2007-11-29 | 동부일렉트로닉스 주식회사 | Method of manufacturing image sensor |
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| US6586811B2 (en) | 2000-04-07 | 2003-07-01 | Canon Kabushiki Kaisha | Microlens, solid state imaging device, and production process thereof |
| US7024093B2 (en) | 2002-12-02 | 2006-04-04 | Shipley Company, Llc | Methods of forming waveguides and waveguides formed therefrom |
| US7932546B2 (en) | 2003-01-29 | 2011-04-26 | Crosstek Capital, LLC | Image sensor having microlenses and high photosensitivity |
| JP2004235635A (en) * | 2003-01-29 | 2004-08-19 | Hynix Semiconductor Inc | Method of manufacturing cmos image sensor |
| WO2005107243A1 (en) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | Image pickup device and method for manufacturing fine lens array |
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| CN103329287A (en) * | 2011-01-14 | 2013-09-25 | 住友电气工业株式会社 | Light receiving device, optical device, and method for manufacturing light receiving device |
| US8809985B2 (en) | 2011-01-14 | 2014-08-19 | Sumitomo Electric Industries, Ltd. | Light receiving device, optical device, and method for producing light receiving device |
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