16 82 1 6 3y91twt\doc/00S A7 B7 經濟部中央標準局貝工消費合作杜印裝 五、發明说明（L ) 本發明是有關於一種用於製造半導體元件之方法，特 別是有關於一種製造半導體元件之蝕刻方法，更詳言之爲 用於半導體元件之蝕刻方法中之補蝕刻方法。 當整個積體電路的主要架構完成後，會在積體電路的 表面上形成一層護層，用於保護位於其下方的積體電路。 於護層形成之後進行蝕刻藉以將下層之金屬銲墊裸露出 來，以便半導體製程最後之元件測試與構裝。該護層之蝕 刻之完成係經由進行第一次定義，即塗佈一層光阻’經曝 光與顯影後，在晶片上留下一層圖案化之光阻層，再以此 圖案化之光阻層爲罩幕，蝕刻保護層，暴露出金屬銲墊， 完成鈾刻之後將光阻層去除。然後，進行一道蝕刻後檢視 (After Etching Inspection ; AEI)的品管步驟，若發現有部 分區域鈾刻不足，則必須重作(Rework)此定義步驟’即必 須重新上光阻，依相同之圖樣再進行曝光、顯影與蝕刻等 步驟，以達到蝕刻完全而利於1後序製程。但因爲第一次定 義與蝕刻完成後，金屬銲墊上的護層以及抗反射層（ARC) 均已去除，若再進行補蝕刻時，則已暴露出之金屬銲墊會 被第二次定義所用的鹼性顯影液侵蝕（A11ack)而形成針孔 (Pitting)，除了將嚴重影響金屬銲墊之外觀外，還會影響 後續打線（Bonding)製程的良率(Yield)。 因此本發明的目的就是在提供一種製造半導體元件之 蝕刻方法，特別是一種用於半導體元件之蝕刻方法中之補 蝕刻方法。本發明之補蝕刻方法，不僅可以完成金屬銲墊 之蝕刻完全，且可以避免金屬銲墊產生針孔的問題’影響 3 (請先閱讀背面之注意事項再填寫本頁〕 裝. 訂 線 本紙張尺度適用中國國家標準（CNS) A4规格（210x297公釐） 468216 A7 39t)U\vf.cl〇c/0()8 B7 五、發明説明（>) 外觀，進一步提升打線製程的良率。 爲達成上述之目的，本發明提出一種補蝕刻的方法， 提供一基底，於基底上形成圖案化之金屬焊墊，於基底與 金屬焊墊上形成一層護層，定義及蝕刻此護層以形成金屬 焊墊之開口。然後’，進行蝕刻後檢視步驟，.如有部分區域 蝕刻不完全或蝕刻不足，則再次塗佈光阻，以前述定義護 層之相同圖案再次定義護層，使用不足顯影的方式顯影且 於蝕刻不足之金屬銲墊開口底部留下部分光阻層，使金屬 銲墊受到光阻層的保護而不會被顯影液侵蝕。然後利用電 漿預處理的方式去除開口底部留下的光阻層，再進行鈾 刻，以重新暴露出金屬焊墊。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1A圖至第1D圖，其繪示依照本發明一較佳實施 例的一種蝕刻不足之後補蝕刻的製造流程圖。 圖式之標記說明： 100 :基底 Π2 :金屬層（金屬銲墊） i 14 :磷矽玻璃層 I 16 :氮化矽層 II 8 :護層 120 ;開口 4 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公釐> " (請先閱讀背面之注意事項再填寫本頁) -裝. 訂 -線· 46 821 6 A7 B7 五、發明説明（3) 122、122a :光阻層 較佳實施胤 請參照第丨A圖至第1D圖，其繪示依照本發明一較 佳實施例的一種補鈾刻的製造流程圖。 首先請參照第1 A '圖，提供一已完成半導體元件之基底 100，於基底100上形成一層金屬層’其1中金屬層的材質 比如是鋁或鋁合金：°包含金屬層以'下的積體電路均已完 成，金屬廢是金屬內連線中最上層的金屬層。完成金屬層 的定義以形成圖案化之金屬婷塾II2後’接著在金屬靜塾 Π2上形成護層。此護層可包含氧化砍層及氮化砂層，其 中氧化矽餍可爲共形的磷形7玻璃層114 ’其比如是以常壓 化學氣相沈積法（Atmospheric Pressure Chemical Vapor Deposition ; APCVD)或電漿加強化學氣相沈積法（Plasma Enhanced Chemical Vapor Deposition ; PECVD)施用。接著， 在氧化矽餍上可形成一層厚的氮化砂層116 ’其可經由如 常壓化學氣相沉積法或電漿加強型化學氣相沉積法而形 成。憐矽玻璃層114與氮化砂層116共同組成的護層118 ’ 便於抵擋外來的水氣、鹼金屬離子及機械性的刮傷。 請參照第】B圖’進行第一次定義’例如微影鈾刻法’ 以形成開口丨20’暴露出金屬靜墊1〖2。接著，進行一道 蝕刻後檢視（AE1)的品管步驟。如檢查後沒有發現任何問 題，則完成此金屬銲墊之護層的製造’但由於定義之過程 有可能產生偏差’如光罩上的圖案於微影步驟時沒有準確 地轉移到晶片上、機台控制不正確或抗反射層（Anti_ 5 本紙張尺度適用中國國家標準（CNS ) A4規格（2!〇><297公釐） I—^--.------^-- (請先閲讀背面之注意事項再填寫本頁) 訂 -線· A7 B7 46 821 6 39V I f.doc/oos 五、發明説明（l/y )16 82 1 6 3y91twt \ doc / 00S A7 B7 Dubaizhuang, Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs. 5. Description of the Invention (L) The present invention relates to a method for manufacturing semiconductor components, and in particular to a method for manufacturing An etching method of a semiconductor element is more specifically a supplementary etching method used in an etching method of a semiconductor element. When the main structure of the entire integrated circuit is completed, a protective layer is formed on the surface of the integrated circuit to protect the integrated circuit below it. After the protective layer is formed, etching is performed to expose the underlying metal pads, so as to test and construct the components at the end of the semiconductor process. The etching of the protective layer is defined for the first time, that is, a layer of photoresist is applied. After exposure and development, a patterned photoresist layer is left on the wafer, and then the patterned photoresist layer is used. For the mask, the protective layer is etched, the metal pad is exposed, and the photoresist layer is removed after the uranium etching is completed. Then, perform a quality control step of After Etching Inspection (AEI). If some areas are found to be insufficiently etched, you must rework this definition step 'that is, you must re-apply the photoresist according to the same pattern Steps of exposure, development, and etching are performed to achieve complete etching and facilitate a subsequent process. However, after the first definition and etching are completed, the protective layer and anti-reflection layer (ARC) on the metal pads have been removed. If additional etching is performed, the exposed metal pads will be used for the second definition. The alkaline developing solution erodes (A11ack) to form pinholes. In addition to seriously affecting the appearance of the metal pads, it will also affect the yield of the subsequent bonding process (Yield). Therefore, an object of the present invention is to provide an etching method for manufacturing a semiconductor element, and more particularly, a supplementary etching method used in an etching method for a semiconductor element. The supplemental etching method of the present invention can not only complete the etching of the metal pads, but also avoid the problem of pinholes generated by the metal pads. 'Influence 3 (Please read the precautions on the back before filling this page). Binding. This paper Standards apply the Chinese National Standard (CNS) A4 specifications (210x297 mm) 468216 A7 39t) U \ vf.cloc / 0 () 8 B7 V. Description of the invention (>) Appearance further improves the yield of wire bonding process. In order to achieve the above object, the present invention provides a method for post-etching, providing a substrate, forming a patterned metal pad on the substrate, forming a protective layer on the substrate and the metal pad, defining and etching the protective layer to form a metal Opening of solder pad. Then, perform the post-etching inspection step. If part of the area is incompletely etched or insufficiently etched, apply a photoresist again, define the protective layer again with the same pattern as the protective layer defined previously, develop using the insufficient development method and etch A part of the photoresist layer is left at the bottom of the opening of the insufficient metal pad, so that the metal pad is protected by the photoresist layer and will not be attacked by the developing solution. Then, the photoresist layer left at the bottom of the opening is removed by plasma pretreatment, and then uranium etching is performed to re-expose the metal pad. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in detail with the accompanying drawings as follows: Brief description of the drawings: FIG. 1A FIG. 1D is a manufacturing flow chart of supplementary etching after insufficient etching according to a preferred embodiment of the present invention. Explanation of drawing symbols: 100: substrate Π2: metal layer (metal pad) i 14: phosphosilicate glass layer I 16: silicon nitride layer II 8: protective layer 120; opening 4 This paper size applies to Chinese national standards (CNS > A4 specifications (210X297 mm) " (Please read the precautions on the back before filling out this page)-Packing. Order-Line · 46 821 6 A7 B7 V. Invention Description (3) 122, 122a: Photoresist The preferred implementation of the layer: please refer to FIGS. 丨 A to 1D, which show a manufacturing flow chart of a uranium engraving method according to a preferred embodiment of the present invention. First, please refer to FIG. 1A 'to provide a completed The substrate 100 of the semiconductor element, a metal layer is formed on the substrate 100. The material of the metal layer is, for example, aluminum or aluminum alloy: The integrated circuits including the metal layer and below have been completed, and the metal waste is metal interconnection. The uppermost metal layer in the line. After the definition of the metal layer is completed to form a patterned metal layer II2 ', a protective layer is then formed on the metal static layer II2. This protective layer may include an oxide cutting layer and a nitrided sand layer, in which oxidation Silicon can be a conformal phosphorous 7 glass layer 114 ', such as Chemical vapor deposition (Atmospheric Pressure Chemical Vapor Deposition; APCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). Next, a thick nitrided sand layer 116 can be formed on the silicon oxide. 'It can be formed by, for example, atmospheric pressure chemical vapor deposition method or plasma enhanced chemical vapor deposition method. The protective layer 118 composed of the silica glass layer 114 and the nitrided sand layer 116' is convenient to resist external moisture, alkali Metal ions and mechanical scratches. Please refer to Figure B] for the first definition of 'such as lithography lithography' to form an opening 丨 20 'to expose the metal static pad 1 〖2. Then, after an etching Check the quality control steps of (AE1). If no problems are found after the inspection, then the manufacturing of the protective layer of this metal pad is completed, but there may be deviations due to the defined process, such as the pattern on the photomask during the lithography step Not accurately transferred to the wafer, machine control is incorrect or anti-reflection layer (Anti_ 5 This paper size applies Chinese National Standard (CNS) A4 specifications (2! 〇 > < 297mm ） I — ^ --.------ ^-(Please read the notes on the back before filling in this page) Order-line · A7 B7 46 821 6 39V I f.doc / oos 5. Description of the invention ( l / y)
Kfkction Coating，TOP ARC)處理不當，而經由蝕刻後檢 ^得-知預定蝕刻之部位並沒有如期地蝕刻去除時，則繼續 ^行第二次定義與補蝕刻的步驟。 請參照第1C圖，進行第二次定義，以重新定義開口 12G。首先，重新上一層光阻122，再以原來定義金屬銲墊 案進行曝光，然後進行顯影。本發明於顯影步驟時， 使用不足顯影（Poor development)的方式，在開口 120的底 音15留下部分光阻I22a。此方式係利用適度調整縮短顯影的 胃間’蓄意造成不足顯影的目的，通常，使用原來顯影時 間的約70-80%左右，或控制留下光阻122a的厚度約2000 埃左右。此時開口 120的圖案已大致定義出來，但因光阻 122未完全顯開，留下部分光阻122a於開口 120的底部， 使得金屬銲墊112受到一層光阻122a的保護。由於進行 顯影步驟時，金屬銲墊U2受到光阻I22a的保護，使金 屬銲墊112不致直接接觸顯影液而受顯影液的侵蝕，造成 金屬銲墊Π2表面形成針孔。 接著，請參照第1 D圖，去除開口 120底部的光阻1 22a， 以免影響後續補蝕刻的進行，故於蝕刻前加做適當時間的 電漿預處理（DESCUM)，將開口 120完全打開。例如，使 用02的電漿進行非等向性乾蝕刻，去除開口 120底部的 光阻122a。如此，使得光阻l22a完全不會影響到後續之 打線製程，又可於第二次定義時保護金屬銲墊Π2。最後’ 再進行蝕刻，以完成補飩刻作用。 由上述本發明較佳實施例可知’本發明於第二次定義 6 (請先聞讀背面之注意事項再填寫本頁) -裝· 訂· 線 A7 B7 46 82 1 β 399 I tw('.doc/008 五、發明説明（g ) 時*使用不足顯影的方式於開口底部留下部分光阻層，使 金屬銲墊受到光阻層的保護，不會受到第二次定義過程所 使用的顯影液侵蝕而形成針孔。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 i I i 裝 Hi 訂I ί 線 (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐）Kfkction Coating (TOP ARC) is improperly processed, and after the etching inspection-it is known that the predetermined etching site has not been removed by etching as scheduled, then the second definition and supplementary etching steps are continued. Please refer to Figure 1C for the second definition to redefine the opening 12G. First, a new layer of photoresist 122 is applied, and then exposed to the original metal pad definition, and then developed. In the developing step of the present invention, a part of the photoresist I22a is left in the bottom sound 15 of the opening 120 by using a poor development method. This method uses a moderate adjustment to shorten the development of the stomach. The purpose is to deliberately cause insufficient development. Usually, about 70-80% of the original development time is used, or the thickness of the photoresist 122a is controlled to be about 2000 angstroms. At this time, the pattern of the opening 120 has been roughly defined, but because the photoresist 122 is not fully exposed, a part of the photoresist 122a is left at the bottom of the opening 120, so that the metal pad 112 is protected by a layer of photoresist 122a. During the developing step, the metal pad U2 is protected by the photoresist I22a, so that the metal pad 112 is not directly contacted by the developing solution and is eroded by the developing solution, causing pinholes to be formed on the surface of the metal pad Π2. Next, referring to FIG. 1D, the photoresist 1 22a at the bottom of the opening 120 is removed so as not to affect the subsequent post-etching. Therefore, a plasma pretreatment (DESCUM) is performed for an appropriate time before the etching to completely open the opening 120. For example, anisotropic dry etching is performed using a 02 plasma to remove the photoresist 122a at the bottom of the opening 120. In this way, the photoresist 1222a will not affect the subsequent wire bonding process at all, and the metal pad Π2 can be protected during the second definition. Finally, etching is performed to complete the etch-up effect. From the above-mentioned preferred embodiments of the present invention, it can be known that the present invention is defined in the second time 6 (please read the precautions on the back before filling in this page)-binding, binding, thread A7 B7 46 82 1 β 399 I tw ('. doc / 008 5. In the description of the invention (g) * Use a method of insufficient development to leave a part of the photoresist layer on the bottom of the opening, so that the metal pads are protected by the photoresist layer and will not be subject to the development used in the second definition process. The liquid is eroded to form pinholes. Although the present invention has been disclosed above in a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes without departing from the spirit and scope of the present invention. Changes and retouching, so the scope of protection of the present invention shall be determined by the scope of the attached patent application. I I i 装 HI I (Please read the precautions on the back before filling this page) This paper Standards apply to China National Standard (CNS) Α4 specifications (210 X 297 mm)