526539 7987twf.doc/009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（/ ) 本發明是有關於一種半導體元件之製造方法，特別是 有關於一種半導體之光阻重工製程。 微影（Photolithography)是半導體製程中非常關鍵的技 術，因爲在整個製程中須不斷地運用微影技術來達成元件 的設計。而微影決定了元件的尺寸，這不僅影響到元件的 品質，亦影響產品之產量以及製造成本。 微影製程係利用光源及光罩對塗佈於晶圓上之光阻層 進行曝光而將其圖案化。目前0.18-0.13微米製程之微影 製程是以氟化氪248奈米準分子雷射(KrF 248 nanometer quasi-molecule laser)深紫外光（deep ultraviolet, DUV)技術 爲主力。由於光阻層下方的金屬層對於微影光源反射率很 高，反射光常對微影製程造成困擾，尤其當製作小尺寸元 件時，微影需要選取波長較短光源，使金屬層界面反射率 提高，此一現象在深紫外光的微影製程中更爲顯著。因此’ 在進行微影製程時，通常會在金屬層的表面，形成一層抗 反射層（anti_reflection coating，ARC)。此一抗反射層除可 減少反射光的產生，亦具有平坦化的效果，因此可確保光 罩圖案轉移的正確性。 當光罩未對準或曝光過度而造成晶圓上所形成圖案化 光阻層圖案有缺陷時，則此有缺陷的圖案化光阻層必須從 晶圓上移除，並再進行一次微影製程，以形成另一正確的 圖案化光阻層，此一步驟稱爲光阻重工製程（photoresist rework process) ° 請參閱第1A-1D圖，其爲繪示習知光阻重工製程之 本紙張尺度適用中國國豕標準（CNS)A4規格（210 X 297公复） (請先閱讀背面之注意事項再填寫本頁)526539 7987twf.doc / 009 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (/) The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a semiconductor photoresistance heavy manufacturing process. Photolithography is a key technology in semiconductor manufacturing, because photolithography must be used continuously throughout the entire process to achieve component design. The lithography determines the size of the component, which not only affects the quality of the component, but also affects the product output and manufacturing cost. The lithography process uses a light source and a photomask to expose and pattern the photoresist layer coated on the wafer. At present, the lithography process of the 0.18-0.13 micron process is based on the KrF 248 nanometer quasi-molecule laser deep ultraviolet (DUV) technology as the main force. Because the metal layer under the photoresist layer has a high reflectivity for the lithographic light source, the reflected light often causes trouble to the lithographic process. Especially when making small-sized components, the lithographic needs to select a light source with a shorter wavelength to make the interface reflectivity of the metal layer. Improve, this phenomenon is more significant in the lithography process of deep ultraviolet light. Therefore, during the lithography process, an anti-reflection coating (ARC) is usually formed on the surface of the metal layer. In addition to reducing the generation of reflected light, this anti-reflection layer also has a flattening effect, so it can ensure the correctness of the mask pattern transfer. When the patterned photoresist layer pattern on the wafer is defective due to misalignment of the photomask or overexposure, the defective patterned photoresist layer must be removed from the wafer and lithography performed again. Process to form another correct patterned photoresist layer. This step is called the photoresist rework process. Please refer to Figures 1A-1D, which is applicable to the paper size of the conventional photoresist rework process. China National Standard (CNS) A4 (210 X 297 public reply) (Please read the precautions on the back before filling this page)
厂裝--------訂-I -------%! 526539 7987twf.doc/009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（>) 剖面流程圖。 請參閱第1A圖，在一基底100上，分別形成有一多 晶矽層112、一矽化鎢層114以及一底層抗反射層116 (bottom anti_reflection coating, BARC)，在底層抗反射層 116上形成有一有缺陷的圖案化光阻層118。請參閱第1B 圖，將基底100上有缺陷的圖案化光阻層118以及底層抗 反射層116移除，習知是利用氧氣電發(oxygen plasma)以 及硫酸 / 過氧化氫溶液（sulfuric acid/hydrogen peroxide mixture, SPM)淸洗的方式，去除有問題的光阻層118及底 層抗反射層U6。此時，在矽化鎢層114表面上會因氧氣 電漿與硫酸/過氧化氫溶液淸洗的作用而形成一薄氧化層 120。 請參閱第1C圖，接著在薄氧化層120上形成一底層 抗反射層122，然後進行一微影製程，以在底層抗反射層 122上形成圖案化光阻層124。請參閱第1D圖，以此圖案 化光阻層爲罩幕，對矽化鎢層114與多晶矽層112進行蝕 刻，最後將基底100上之圖案化光阻層124與底層抗反射 層122去除，形成圖案化之矽化鎢層U4a與多晶矽層 112a 〇 從第ID圖可以看出，利用習知重工後之圖案化光阻 層124所形成的砂化鎢層114a會有圖案凹陷（pattern pitting) 的情況產生，而這可能在後續製程中造成元件的缺陷。造 成上述矽化鎢層114a圖案凹陷的原因，是因爲在矽化鎢 層114上所形成的薄氧化層120會改變矽化鎢層114的反 4 本紙張尺度適用中關家標準（CNS)A4 g⑵〇 X 297公爱—) -- (請先閱讀背面之注意事項再填寫本頁) 訂· 經濟部智慧財產局員工消費合作社印製 526539 7987twf.doc/009 Λ7 _ B7 五、發明說明（》） 射率。反射率的改變自然影響到光阻曝光的條件。然而， 在重工過程中’微影製程並不會爲此重新調整曝光參數， 致使重工後的圖案化光阻層124輪廓發生改變，因而降低 有效光阻的厚度。光阻的厚度不足將無法保護底下的被蝕 刻層的圖案。因此，矽化鎢層114表面會產生圖案凹陷， 並影響矽化鎢層114蝕刻終點的穩定性，造成蝕刻異常。 因此，本發明的目的在於提供一種半導體元件之製造 方法，避免在光阻重工製程中光阻層下方的金屬層的反射 率發生變化，改變微影製程的曝光參數。 本發明的另一目的在於提供一種半導體之光阻重工製 程，以避免重工後的圖案化光阻層輪廓變形，維持足夠的 光阻厚度。 本發明的再一目的在於提供一種半導體之光阻重工製 程，避免曝光參數發生改變，而使光阻厚度不足，造成被 蝕刻層產生圖案凹陷，因而在後續製程中導致元件缺陷。 爲達成本發明之目的，本發明提供一種光阻重工製 程，包括有下列步驟。首先，提供一半導體基底，基底上 依序形成有一導體層及一第一底層抗反射層以及一必須重 工之圖案化光阻層。接著，將必須重工的光阻層以及底層 抗反射層去除，因而在導體層的表面形成有一薄氧化層。 以溼式淸洗之方式，將形成在導體層表面薄氧化層去除° 接著，進行一微影製程，以形成一重工後之圖案化光阻層。 上述本發明微影製程，係包括依序在導體層上形成一 第二底層抗反射層與一光阻層，接著對光阻層進行曝光及 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I I I I i I I * c I I, ' · I I I I I I I 訂· — — — — — — I· (請先閱讀背面之注意事項再填寫本頁) 526539 7987twf.doc/009 Λ7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（4-) 顯影’而獲得重工後之圖案化光阻層。在完成重工後之圖 案化光阻層時，接著以該圖案化光阻層爲罩幕，對下層之 第二底層抗反射層及金屬層進行蝕刻，然後再將圖案化光 阻層與第二底層抗反射層去除，而得到圖案化之導體層。 在本發明一較佳實施例中，上述之導體層係包括一多 晶矽層與一矽化鎢層。而上述有缺陷之圖案化光阻層以及 第一底層抗反射層的係使用氧電漿蝕刻與SPM淸洗之方 式去除。上述薄氧化層之溼式淸洗係利用稀釋之氫氟酸 (diluted hydrogen fluoride)進行淸洗，亦可利用氨水/過氧 化氫溶液(ammonium hydroxide/hydrogen peroxide mixture， ApM)進行淸洗而將薄氧化層去除。 本發明係在去除必須重工的光阻層與第一底層抗反射 胃之後’利用溼式淸洗之方式，將形成於導體層上的薄氧 k層去除，如此將可在後續的微影製程中，避免導體層的 光反射率發生變化，而影響重工後圖案化光阻層的品質。 ’由於本發明之重工後之圖案化光阻層具有相當好的 輪廓’因此可有效保護底下的被蝕刻層的圖案，並可維持 倉虫刻終點的穩定性，避免蝕刻後的圖案產生凹陷，而在後 續製程中導致元件發生缺陷。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖式簡單說明： 第1 A-1D圖係繪示習知光阻重工製程之剖面流程圖。 ; Φ pr. Β ί ! l· (請先閱讀背面之注意事項再填寫本頁) — ^•1------4ΠFactory installed -------- Order-I -------%! 526539 7987twf.doc / 009 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (>) Section process Illustration. Referring to FIG. 1A, a polycrystalline silicon layer 112, a tungsten silicide layer 114, and a bottom anti-reflection coating 116 (barc) are formed on a substrate 100. A defect is formed on the bottom anti-reflection layer 116.的 Patterned Photoresist Layer 118. Referring to FIG. 1B, the defective patterned photoresist layer 118 and the underlying anti-reflection layer 116 on the substrate 100 are removed. It is conventional to use oxygen plasma and sulfuric acid / hydrogen peroxide solution (sulfuric acid / hydrogen peroxide mixture (SPM) cleaning method to remove the problematic photoresist layer 118 and the underlying anti-reflection layer U6. At this time, a thin oxide layer 120 is formed on the surface of the tungsten silicide layer 114 due to the washing effect of the oxygen plasma and the sulfuric acid / hydrogen peroxide solution. Referring to FIG. 1C, a bottom anti-reflection layer 122 is formed on the thin oxide layer 120, and then a lithography process is performed to form a patterned photoresist layer 124 on the bottom anti-reflection layer 122. Referring to FIG. 1D, using the patterned photoresist layer as a mask, the tungsten silicide layer 114 and the polycrystalline silicon layer 112 are etched, and finally the patterned photoresist layer 124 and the bottom anti-reflection layer 122 on the substrate 100 are removed to form Patterned tungsten silicide layer U4a and polycrystalline silicon layer 112a 〇 As can be seen from the ID chart, the sanded tungsten layer 114a formed by the conventional patterned photoresist layer 124 may have pattern pitting. Produced, and this may cause component defects in subsequent processes. The reason why the above tungsten silicide layer 114a pattern is depressed is because the thin oxide layer 120 formed on the tungsten silicide layer 114 will change the inversion of the tungsten silicide layer 114. The paper standard is applicable to Zhongguanjia Standard (CNS) A4 g⑵〇X 297 Public Love —)-(Please read the notes on the back before filling out this page) Order · Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 526539 7987twf.doc / 009 Λ7 _ B7 V. Explanation of the invention (") Emissivity . The change in reflectivity naturally affects the conditions of photoresist exposure. However, during the rework process, the lithography process does not readjust the exposure parameters for this purpose, resulting in a change in the outline of the patterned photoresist layer 124 after rework, thereby reducing the thickness of the effective photoresist. Insufficient thickness of the photoresist will not protect the pattern of the underlying etched layer. Therefore, a pattern depression is generated on the surface of the tungsten silicide layer 114, which affects the stability of the etching end point of the tungsten silicide layer 114 and causes an abnormal etching. Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device, which prevents the reflectance of the metal layer under the photoresist layer from changing during the photoresist rework process, and changes the exposure parameters of the lithography process. Another object of the present invention is to provide a photoresist heavy-duty process for semiconductors to avoid deformation of the contour of the patterned photoresist layer after rework and maintain a sufficient photoresist thickness. Yet another object of the present invention is to provide a photoresist heavy-duty process for semiconductors, which avoids changing the exposure parameters and makes the thickness of the photoresist insufficient, which results in pattern depressions in the etched layer, thereby causing element defects in subsequent processes. In order to achieve the purpose of the present invention, the present invention provides a photoresist heavy industry process including the following steps. First, a semiconductor substrate is provided. A conductive layer, a first underlying anti-reflection layer, and a patterned photoresist layer that must be reworked are sequentially formed on the substrate. Next, the photoresist layer and the underlying anti-reflection layer, which must be reworked, are removed, so a thin oxide layer is formed on the surface of the conductor layer. The thin oxide layer formed on the surface of the conductor layer is removed by wet cleaning. Then, a lithography process is performed to form a patterned photoresist layer after rework. The above-mentioned lithographic process of the present invention includes sequentially forming a second underlying anti-reflection layer and a photoresist layer on a conductor layer, and then exposing the photoresist layer and 5 paper standards to the Chinese National Standard (CNS) A4 specifications. (210 X 297 mm) IIIII i II * c II, '· IIIIIII order · — — — — — — I · (Please read the precautions on the back before filling this page) 526539 7987twf.doc / 009 Λ7 Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau B7 V. Description of Invention (4-) Developed to obtain a patterned photoresist layer after heavy industry. When the patterned photoresist layer is completed after rework, the patterned photoresist layer is then used as a mask to etch the second underlying anti-reflection layer and the metal layer, and then the patterned photoresist layer and the second The bottom anti-reflection layer is removed to obtain a patterned conductor layer. In a preferred embodiment of the present invention, the above-mentioned conductor layer includes a polycrystalline silicon layer and a tungsten silicide layer. The above-mentioned defective patterned photoresist layer and the first underlying anti-reflection layer are removed by means of oxygen plasma etching and SPM cleaning. The above-mentioned wet cleaning of the thin oxide layer is performed by diluting hydrogen fluoride (diluted hydrogen fluoride), and also by using ammonium hydroxide / hydrogen peroxide mixture (ApM) to perform cleaning. The oxide layer is removed. After removing the photoresist layer and the first underlying anti-reflective stomach that must be reworked, the invention uses a wet scrubbing method to remove the thin oxygen k layer formed on the conductor layer, so that it can be used in the subsequent lithography process. In order to avoid the change of the light reflectance of the conductor layer, it will affect the quality of the patterned photoresist layer after rework. 'Because the patterned photoresist layer after the rework of the present invention has a fairly good profile', it can effectively protect the pattern of the underlying etched layer, and maintain the stability of the end of the engraved engraving, and avoid the depression of the pattern after etching. In the subsequent processes, defects occur in the components. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: The drawings are briefly explained: Figures 1 A-1D This is a sectional flow chart showing the conventional process of photoresistance heavy industry. ; Φ pr. Β ί! L · (Please read the notes on the back before filling this page) — ^ • 1 ------ 4Π
X 297公釐） 經濟部智慧財產局員工消費合作社印製 526539 7 9 87twf.d〇c/009 A7 B7 五、發明說明（<) 第2A-2E圖爲依據本發明較佳實施例之一種光阻重工 製程之剖面流程圖。 圖示標記說明： 100、200 :半導體基底 112、212 :多晶矽層 112a、212a :圖案化多晶矽層 114、214 :矽化鎢層 114a、214a :圖案化矽化鎢層 116、122、216、222 :底層抗反射層 118、218 :有缺陷之圖案化光阻層 120、220 :薄氧化層 124、224 :重工後之圖案化光阻層 實施胤 請參閱第2A-2E圖，其爲繪示本發明較佳實施例之一 種光阻重工製程剖面流程圖。 請參閱第2A圖，首先提供一基底200，基底200上 依序有一導體層，包括一多晶矽層212與一矽化鎢層214， 以及一底層抗反射層216。底層抗反射層216之材質例如 是氮化鈦’其形成的方法例如是化學氣相沉積法。而在底 層抗反射層116上具有一必須重工的圖案化光阻層118, 此光阻層118例如是具有缺陷者。 請參閱第2B圖，將基底200上必須重工的圖案化光 阻層218移除，同時亦將底層抗反射層U6 一起移除。移 7 本.我張尺二適用中國國豕標準（Cns)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 零· I >1_1 «ϋ I I n ·ϋ ^^0, ϋ ·ϋ ·ϋ 1 ϋ I - -ρ 526539 7 987twf·doc/〇Qg 五 A7X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 526539 7 9 87twf.doc / 009 A7 B7 V. Description of the invention (<) Figures 2A-2E are one of the preferred embodiments according to the present invention Sectional flow chart of photoresist heavy industry process. Description of icons: 100, 200: semiconductor substrates 112, 212: polycrystalline silicon layers 112a, 212a: patterned polycrystalline silicon layers 114, 214: tungsten silicide layers 114a, 214a: patterned tungsten silicide layers 116, 122, 216, 222: bottom layers Anti-reflection layers 118, 218: Defective patterned photoresist layers 120, 220: Thin oxide layers 124, 224: Patterned photoresist layers implemented after rework. Please refer to Figures 2A-2E, which illustrate the present invention A cross-sectional flowchart of a photoresist heavy industry process in a preferred embodiment. Referring to FIG. 2A, a substrate 200 is first provided, and a conductive layer is sequentially formed on the substrate 200, including a polycrystalline silicon layer 212, a tungsten silicide layer 214, and a bottom anti-reflection layer 216. The material of the bottom anti-reflection layer 216 is, for example, titanium nitride, and a method of forming the bottom anti-reflection layer 216 is, for example, a chemical vapor deposition method. The bottom anti-reflection layer 116 has a patterned photoresist layer 118 that must be reworked. The photoresist layer 118 is, for example, a defector. Referring to FIG. 2B, the patterned photoresist layer 218 that must be reworked on the substrate 200 is removed, and the bottom anti-reflection layer U6 is also removed together. Move 7 books. I apply Chinese National Standard (Cns) A4 size (210 X 297 mm) to the ruler (Please read the precautions on the back before filling out this page) Zero · I > 1_1 «ϋ II n · ϋ ^^ 0, ϋ · ϋ · ϋ 1 ϋ I--ρ 526539 7 987twf · doc / 〇Qg Five A7
經濟部智慧財產局員工消費合作社印製 發明說明（^) 陈的方法係先用氧氣電紫（oxygen plasma)將有必須重工之 0条化光阻層21S以及部分的底層抗反射層2丨6蝕刻去 除’接者再以硫酸/過氧化氫溶液淸洗的方式，去除殘留 的光阻層218與底層抗反射層216。由於氧氣電漿與硫酸/ 過氧化氣溶液淸洗的氧化作用（oxidation)，在砂化鎢層214 表面上會產生一層薄氧化層22〇。 接著，請參閱第2C圖，利用溼式淸洗之方式，將形 成在矽化鎢層214上的薄氧化層220去除。此處所用的溼 式淸洗方式係利用稀釋之氫氟酸進行淸洗。較佳的係以濃 度爲49%之氫氟酸水溶液和水以體積比爲Uoqjoo之 比例混合，亦可利用氨水/過氧化氫溶液進行淸洗而將薄 氧化層220去除。較佳的係以濃度爲29%的氨水(Nh4〇⑴ 以及濃度爲3 0 %的過氧化氫水溶液 和水以體積比爲 1:1:5〜1:2:7之比例混合。 請參閱第2D圖，在矽化鎢層214的表面形成另一底 層抗反射層222，其材質例如是氮化鈦，形成的方法例如 是化學氣相沉積法。接著，進行一微影製程，係先在底層 抗反射層122上形成一光阻層，然後對光阻層進行曝光及 顯影，而獲得重工後圖案化光阻層224。由於形成在矽化 鶴層214上之薄執化層2 2 0已有效的移除，砂化鶴層214 對曝先先源的反射率可以維持在原先最佳化的情況，使重 工後的圖案化光阻層224輪廓以及厚度較爲均勻，因此能 對於下方被蝕刻層的圖案產生較好的保護。 接著，利用重工後的圖案化光阻層224爲罩幕，對下 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） (請先閱讀背面之注意事項再填寫本頁) 零· · ϋ H ϋ n ϋ β— ϋ^σ4· ·ϋ ϋ ·ϋ ϋ ϋ ϋ _1 %· 526539 7987twf·d〇c/〇09 A7 B7 五、發明說明（^\ ) 層的底層抗反射層222、矽化鎢層214及多晶矽層212進 行非等向性蝕刻，然後再將圖案化光阻層224與殘留的底 層抗反射層222移除，因此而得到輪廓較佳且無凹陷 (pitting)發生的圖案化之矽化鎢層214a與多晶矽層212a。 根據本發明上述較佳之實施例，本發明較習知有以下 的優點，第一，本發明係在去除必須重工的光阻層及其下 底層抗反射層之後，利用溼式淸洗之方式，將形成於導體 層上的薄氧化層去除，如此將可在後續的微影製程中，避 免導體層的光反射率以及曝光條件發生變化，而影響重工 後圖案化光阻層的品質。第二，由於本發明重工後之圖案 化光阻層具有相當好的輪廓及均勻的厚度，因此可有效保 護底下的被蝕刻層的圖案，並可維持蝕刻終點的穩定性， 避免被蝕刻層發生圖案凹陷，以致在後續製程中造成元件 的缺陷。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 ------rlIhlI^si — (請先閱讀背面之注意事項再填寫本頁) · 經濟部智慧財產局員工消費合作社印製 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）The Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a description of the invention (^) Chen's method is to first use oxygen plasma (oxygen plasma) to have 0 photoresistive layers 21S that must be reworked and some of the underlying anti-reflection layer 2 丨 6 The etching removal is performed by removing the remaining photoresist layer 218 and the bottom anti-reflection layer 216 with a sulfuric acid / hydrogen peroxide solution. Due to the oxidation of the oxygen plasma and the sulfuric acid / peroxide solution, a thin oxide layer 22 is formed on the surface of the sanded tungsten layer 214. Next, referring to FIG. 2C, the thin oxide layer 220 formed on the tungsten silicide layer 214 is removed by a wet scrubbing method. The wet washing method used here is washing with diluted hydrofluoric acid. Preferably, a 49% concentration hydrofluoric acid aqueous solution and water are mixed in a volume ratio of Uoqjoo. The thin oxide layer 220 may also be removed by rinsing with an ammonia / hydrogen peroxide solution. It is better to mix 29% ammonia water (Nh4〇⑴) and 30% hydrogen peroxide solution and water in a volume ratio of 1: 1: 5 ~ 1: 2: 7. Please refer to section In the 2D view, another bottom anti-reflection layer 222 is formed on the surface of the tungsten silicide layer 214, and the material is, for example, titanium nitride. A photoresist layer is formed on the anti-reflection layer 122, and then the photoresist layer is exposed and developed to obtain a patterned photoresist layer 224 after rework. Since the thin hardened layer 2 2 0 formed on the silicide layer 214 is effective Removal, the reflectivity of the sanded crane layer 214 to the original source can be maintained at the original optimization, so that the contour and thickness of the patterned photoresist layer 224 after the rework are more uniform, so it can be etched below The pattern of the layer produces better protection. Next, the patterned photoresist layer 224 is used as a mask after the rework, and the Chinese paper standard (CNS) A4 (210 X 297 meals) is applied to the lower paper size (please read first) Note on the back, please fill out this page) Zero · · ϋ H ϋ n ϋ β ϋ ^ σ4 · · ϋ ϋ · ϋ ϋ ϋ ϋ _1% · 526539 7987twf · doc / 〇09 A7 B7 V. Description of the invention (^ \) The bottom anti-reflection layer 222, tungsten silicide layer 214 and polycrystalline silicon layer 212 Anisotropic etching is performed, and then the patterned photoresist layer 224 and the remaining bottom anti-reflection layer 222 are removed, thereby obtaining a patterned tungsten silicide layer 214a and polycrystalline silicon with a better profile and no pitting. Layer 212a. According to the above-mentioned preferred embodiments of the present invention, the present invention has the following advantages over the conventional one. First, the present invention uses wet cleaning after removing the photoresist layer and the underlying anti-reflection layer that must be reworked. In this way, the thin oxide layer formed on the conductor layer is removed, so that in the subsequent lithography process, the light reflectance of the conductor layer and the exposure conditions are prevented from changing, which affects the quality of the patterned photoresist layer after rework. Secondly, since the patterned photoresist layer after the rework of the present invention has a fairly good profile and uniform thickness, it can effectively protect the pattern of the underlying etched layer, and maintain the stability of the etching end point to avoid the etched layer. hair The pattern is recessed, resulting in defects in the subsequent processes. Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art will not depart from the spirit and scope of the present invention. In addition, various modifications and retouching can be made, so the scope of protection of the present invention shall be determined by the scope of the attached patent application. ------ rlIhlI ^ si — (Please read the precautions on the back before (Fill in this page) · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)