A7 A7 經消部中央標準局貝工消費合作社印製 B7 __ 五、發明説明（丨） 本發明是有關於一種積體電路元件之製造方法，且特 別是有關於一種恢復對準檫記（Alignment Mark)之對準 功能的方法。 微影（Photolithography)，是製造半導體元件成敗與 否的關鍵步驟’故而在半導體製程中’其佔著舉足輕重的 地位。以一般製作元件的製程爲例’通常一個產品依其複 雜性的不同，所需要的微影、曝光步驟，約在10至28次 左右。爲使光罩的圖案能正確地轉移到晶片上，通常，半 導體製作的過程中’在每一次執行光阻的曝光之前，必須 做好各餍之間的對準，以避免不當的圖案轉移，而導致整 個晶片報廢的情況發生。 傳統的曝光製程中’係在欲形成半導體元件之晶圓上 形成與光罩相對應的對準標記。此對準標記，即爲所泛稱 之零點標記（ZeroMark)，其階梯高度（StepHeight)在 進行對準時，可以形成一散射場（Scattering Site)或繞射 邊緣（Diffraction Edge)。當所提供的光源，照射於整個 晶圓時，投射在對準標記上的光所產生的繞射圖形 (Diffraction Pattern )，可以反射至對準感應器（Alignment Sensor)，或第一階繞射干涉儀對準系統（First Order Diffraction Interferometer Alignment System )，而達到對 準的目的。 然而，隨著沈積次數的增加，晶圓上所形成之膜層將 使對準標記逐漸失去所具有的階梯高度以至於所產生之繞 射現象不夠明顯，使得對準信號（Alignment Signal)太微 3A7 A7 Printed by the Central Standards Bureau of the Ministry of Consumer Affairs, Bong Gong Consumer Cooperative B7 __ V. Description of the Invention (丨) The present invention relates to a method for manufacturing integrated circuit components, and in particular, to a method for restoring alignment. Mark) alignment method. Photolithography is a key step in the success or failure of manufacturing a semiconductor device, and therefore plays a significant role in the semiconductor manufacturing process. Taking a general manufacturing process of an element as an example ', generally, a product requires about 10 to 28 lithography and exposure steps depending on its complexity. In order for the photomask pattern to be correctly transferred to the wafer, usually, during the semiconductor manufacturing process, 'each time the photoresist is exposed, alignment must be done between each frame to avoid improper pattern transfer. As a result, the entire wafer is scrapped. In the conventional exposure process, an alignment mark corresponding to a photomask is formed on a wafer on which a semiconductor element is to be formed. This alignment mark is a so-called ZeroMark. When the step height is aligned, it can form a scattering site or a diffractive edge. When the provided light source irradiates the entire wafer, the diffraction pattern (Diffraction Pattern) generated by the light projected on the alignment mark can be reflected to the alignment sensor or the first-order diffraction Interferometer alignment system (First Order Diffraction Interferometer Alignment System), to achieve the purpose of alignment. However, as the number of depositions increases, the film layer formed on the wafer will gradually lose the step height of the alignment mark so that the resulting diffraction phenomenon is not obvious enough, making the alignment signal too small. 3
---.---U----^--裝-----ί訂〜-----線 - . - . (請先閱讀背而之注意事Ji:#填寫本頁) I 本紙張尺度相中關家標华 (CNS ) /\4说抬（210x297公筇） 3368lWrd〇C/〇()8__B7___ 五、發明説明（2 ) 弱’或雜訊比率（Noise Ratio)太大，而無法由對準感應 器偵測到任適當的對準信號，而導致對準錯誤 (Misalignment )的發生。 在第1A圖中所繪的剖面圖’是在已形成有金氧半導 體104的晶圓100上沈積一層介電層106與一層金屬層1〇8 之後，位於對準標記102上方的金屬層1〇8已然失去了晶 圓100上對準標記102所具有的階梯高度110，且由於金 屬層10S在所提供的對準光源下爲不透光膜層（〇paqUe Film)，因此無法使對準的光源，由對準標記ι〇2反射至 對準感應益’或弟一階繞射干涉儀對準系統，故而常導致 對準的錯誤，甚至發生根本無法對準的現象。 請參照第1B圖，爲了恢復對準標記102準確對準的 目的’以避免對準錯誤的發生，其典型的作法，係利用微 影與蝕刻的技術，在對應於對準標記圖案1〇4上方的金屬 層108中，形成開口 124,使對準光源可以通過此開口 124， 避免金屬層108之遮蔽，而使對準標記1〇2得以在後續製 程中發揮準確對準之功能。 ~ 然而，以習知的方法，不但需在金屬層1〇8上形成光 阻層14〇，還必須另外再製作光罩15〇，方能以微影之曝 光與福影技術使光阻層圖案化。其後，才可利用此圖案化 的光阻層〗4〇爲罩幕，以蝕刻去除位於對準標記1〇2上方 之金屬層，形成開口 124。最後’再將光阻層14〇剝 除的方式，方能達到局邰去除金屬層1〇8之目的。妖而， 以此方法不但增加製程流程與時間，減少製程之產能 本紙張 尺度適用中國國家摞準（CNS ) ( 2]〇Χ 297^>^*· A7 3368tvvr.cloc/008---.--- U ---- ^-装 ----- ίOrder ~ ----- line-.-. (Please read the back notice Ji: #Fill this page) I Guan Jiabiaohua (CNS) / \ 4 said to raise (210x297 gong) 3368lWrd〇C / 〇 () 8__B7___ V. Description of the invention (2) Weakness or noise ratio is too large, and Any proper alignment signal cannot be detected by the alignment sensor, resulting in the occurrence of misalignment. The cross-sectional view shown in FIG. 1A is a metal layer 1 located above the alignment mark 102 after depositing a dielectric layer 106 and a metal layer 108 on the wafer 100 on which the metal-oxide semiconductor 104 has been formed. 〇8 has lost the step height 110 of the alignment mark 102 on the wafer 100, and since the metal layer 10S is an opaque film (〇paqUe Film) under the provided alignment light source, the alignment cannot be made The light source is reflected from the alignment mark ι02 to the alignment sensor or the first-order diffraction interferometer alignment system, so it often leads to alignment errors, and even the phenomenon of no alignment at all. Please refer to FIG. 1B. For the purpose of recovering the accurate alignment of the alignment mark 102 'to avoid the occurrence of misalignment, the typical method is to use the technique of lithography and etching to match the alignment mark pattern 104 An opening 124 is formed in the upper metal layer 108 so that the alignment light source can pass through the opening 124 to prevent the metal layer 108 from being shielded, so that the alignment mark 102 can perform an accurate alignment function in subsequent processes. ~ However, in the conventional method, not only the photoresist layer 14o needs to be formed on the metal layer 108, but also a photomask 15o must be made in order to make the photoresist layer with lithography exposure and Fuying technology. Patterned. Thereafter, the patterned photoresist layer 40 can be used as a mask to etch and remove the metal layer above the alignment mark 102 to form an opening 124. Finally, the method of stripping the photoresist layer 14 to achieve the purpose of locally removing the metal layer 108 can be achieved. This method not only increases the process flow and time, but also reduces the production capacity of the process. The paper size is applicable to China National Standards (CNS) (2) 〇Χ 297 ^ > ^ * · A7 3368tvvr.cloc / 008
I 1 ......I —· ·····*__ 丨丨 ' ' . · · * ·· _’ _ I 五、發明説明（3 ) (Throughput)，還必須再額外製作光罩’提高製造之成 本，才能使對準標記102得以在後續製程中發揮準確對準 之功能。 有鑑於此，本發明之目的就是在提供一種恢復對準標 記之對準功能的方法，可以不需形成光阻層，亦不需額外 製作光罩，即不需以微影的方式.，即可去除對準標記上方 之不透光層，使對準標記發揮準確對準之功能。 根據本發明之目的提出一種恢復對準標記之對準功能 的方法，此方法適用於已形成有一膜層的晶圓，且此膜層 遮蔽對準標記，使之無法準確對準。此方法係將光輔助化 學蝕刻劑裝塡於一裝置之中’此裝置可以將光輔助化學倉虫 刻劑覆蓋於對準標記上方的膜層之上，再以光束照射對準 標記上方的膜層使其與光輔助化學試劑產生化學反應，而 達到局部去除對準標記上方之膜層，使對準標記恢復對準 功能之目的。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易愴，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1A圖係繪示習知一種失去對準功能之元件的剖面 圖； 第圖係繪示習知一種恢復第1A圖之元件其對準 功能之方法的剖面圖；以及 第2A圖至第2B圖係繪示本發明之一種恢復對準標 5 本紙張尺度適财關《:縣（⑽）' A7 137 經濟部中央標隼局貝工消费合作社印製 3368tw I'.d oc/U08 五、發明説明（匕） 記之對準功能的方法示意圖。 圖式之標記說明： 100，200 :晶圓 102，202 :對準標記 104 :金氧半導體 106 :介電層 108 :金屬層 Π〇 :階梯高度 124，224 :開口 140 :光阻層 150 :光罩 208 :膜層 220 :晶座 222 :裝置 226 :化學蝕刻劑 228 :光束 實施例 第2圖繪示依照本發明實施例一種恢復對準標記之對 準功能之方法的示意圖。請參照第2圖，首先，將欲恢復 對準標記202之對準功能的晶圓200放置於晶座220上。 此晶圓200之示意圖繪示於第3圖，其上具有層與層之間 對準之用的對準標記202。並且，在此晶圓200上已覆蓋 有一層膜層20'8，此膜層208會使得晶圓200之對準標記 202在微影的過程中無法準確對準或使得對準失效。此膜 6 (誚先閱讀背而之注意事項再填寫本页)I 1 ...... I — ····· * __ 丨 丨 ''. · · * ·· _ '_ I V. Explanation of the invention (3) (Throughput), you must also make an additional photomask 'In order to increase the cost of manufacturing, the alignment mark 102 can perform the function of accurate alignment in subsequent processes. In view of this, the object of the present invention is to provide a method for restoring the alignment function of the alignment mark, which can eliminate the need to form a photoresist layer and make an additional photomask, that is, does not need a lithography method. The opaque layer above the alignment mark can be removed so that the alignment mark can perform accurate alignment. According to the purpose of the present invention, a method for restoring the alignment function of an alignment mark is proposed. This method is suitable for a wafer that has been formed with a film layer, and the film layer shields the alignment mark so that it cannot be accurately aligned. This method is to install a photo-assisted chemical etchant in a device. 'This device can cover the photo-assisted chemical silt etchant on the film layer above the alignment mark, and then irradiate the film above the alignment mark with a light beam. The layer causes a chemical reaction with the photo-assisted chemical reagent to achieve the purpose of partially removing the film layer above the alignment mark and restoring the alignment mark to the alignment function. In order to make the above and other objects, features, and advantages of the present invention more obvious and easy, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: FIG. 1A FIG. 2 is a cross-sectional view showing a conventional component that has lost the alignment function; FIG. 1 is a cross-sectional view showing a conventional method for recovering the alignment function of the component in FIG. 1A; and FIGS. 2A to 2B are Shows a kind of restoration alignment standard of the present invention 5 paper size suitable for financial affairs ": County (⑽) 'A7 137 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 3368tw I'.d oc / U08 V. Description of the invention ( Dagger) Note the method of alignment function. Explanation of the marks of the drawings: 100, 200: wafer 102, 202: alignment mark 104: metal oxide semiconductor 106: dielectric layer 108: metal layer Π: step height 124, 224: opening 140: photoresist layer 150: Photomask 208: film layer 220: crystal base 222: device 226: chemical etchant 228: light beam embodiment FIG. 2 illustrates a method for restoring the alignment function of the alignment mark according to the embodiment of the present invention. Referring to FIG. 2, first, a wafer 200 on which the alignment function of the alignment mark 202 is to be restored is placed on the wafer base 220. The schematic diagram of the wafer 200 is shown in FIG. 3, and there are alignment marks 202 for layer-to-layer alignment. In addition, a film layer 20'8 has been covered on the wafer 200, and the film layer 208 will cause the alignment mark 202 of the wafer 200 to fail to align accurately during the lithography process or make the alignment invalid. This film 6 (Please read the precautions before filling in this page)
本紙張尺度適用中國國家標準（CNS )刎坭格（210X2W 公趑） 33 68tw f.cloc/00 8 A7 經滴部中央標準局負工消费合作社印^ 五、發明説明（《） 層208例如是一層在對準所提供的光源之下爲不透光的金 屬層或是複晶砂層。 然後’在晶座220的上方提供一裝置222，此裝置222 可裝盛化學蝕刻劑226，以將化學蝕刻劑226提供於對準 標記202上方之膜層208，而達到局部去除膜層208之目 的。此裝置222例如爲氣體噴嘴（Gas Nozzle)，而其所 裝盛的化學蝕刻劑226則包括光輔助化學蝕刻劑（Photon Assisted Chemical Etchant)。當使用的化學蝕刻劑226爲 光輔助化學蝕刻劑時，較佳的，可以在晶圓200上方提供 一光束（Photo Beam) 228，此光束228可以準確地照射 於位於對準標記202上方之膜層208與光輔助化學飩刻 劑’並且此光束228可以誘導光輔助化學蝕刻劑與膜層208 產生化學蝕刻反應，使遭受光束228照射的光輔助化學蝕 刻劑與膜層2〇8產生化學蝕刻反應，而未遭受光束228照 射的光輔助化學蝕刻劑，則不會與膜層2〇8產生蝕刻反應。 因此，當光束228只照射於位於對準標記202上方的膜層 2〇8時，可以藉由光束228誘導光輔助化學蝕刻劑，以使 經誘導後的光輔助化學蝕刻劑與位於對準標記202上方的 膜層208產生化學蝕刻反應。 其後，請參照第2B圖，經由淸洗的步驟，則可去除 化學蝕刻反應後所剩餘之殘餘物，而達到局部去除對準標 記202上方之膜層208，使膜層208在對準標記202的上 方形成開口 224 ’使膜層208不再遮蔽對準標記202而達 到恢復對準標記2〇2其對準功能的目的。緣此，本發明可 % 間 讀 背 而 之 注 意 事in 再 奮 裝 訂 線 本紙乐尺度適用中國國家標準（CNS ) Λ4蚬枋（210x297公处）The size of this paper applies to the Chinese National Standard (CNS) grid (210X2W). 33 68tw f.cloc / 00 8 A7 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Div. 5. Description of the invention (") Layer 208 is for example One layer is an opaque metal layer or a polycrystalline sand layer under the light source provided by the alignment. Then, a device 222 is provided above the wafer base 220, and the device 222 can hold the chemical etchant 226 to provide the chemical etchant 226 on the film layer 208 above the alignment mark 202, so as to partially remove the film layer 208. purpose. The device 222 is, for example, a gas nozzle (Gas Nozzle), and the chemical etchant 226 contained therein includes a Photon Assisted Chemical Etchant. When the chemical etchant 226 used is a photo-assisted chemical etchant, preferably, a beam (Photo Beam) 228 can be provided above the wafer 200, and the beam 228 can accurately irradiate the film above the alignment mark 202 The layer 208 and the photo-assisted chemical etchant 'and the light beam 228 can induce a chemical etching reaction between the photo-assisted chemical etchant and the film layer 208, so that the photo-assisted chemical etchant subjected to the irradiation of the light beam 228 and the film layer 208 generate chemical etching. Reaction, and the photo-assisted chemical etchant that has not been irradiated by the light beam 228 will not cause an etching reaction with the film layer 208. Therefore, when the light beam 228 is irradiated only to the film layer 208 located above the alignment mark 202, the light-assisted chemical etchant can be induced by the light beam 228, so that the induced photo-assisted chemical etchant and the alignment mark are located. The film layer 208 above 202 generates a chemical etching reaction. After that, please refer to FIG. 2B. Through the cleaning step, the residue remaining after the chemical etching reaction can be removed, and the film layer 208 above the alignment mark 202 can be partially removed, so that the film layer 208 is aligned with the alignment mark. An opening 224 ′ is formed above 202 so that the film layer 208 no longer covers the alignment mark 202 and achieves the purpose of recovering the alignment function of the alignment mark 202. For this reason, the present invention can be read from the back to the next in mind. In the binding line, the paper scale is applicable to the Chinese National Standard (CNS) Λ4 蚬 枋 (210x297).
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3308ivvf.d oc/OOH A7 137 五、發明説明（^ ) 以精確地局部去除位於對準標記202上方之膜層208。 根據以上所述，本發明具有下列特徵’· 1. 可以不需藉由額外的微影製程，即可精確且局部 去除晶片上之膜層，使晶片之對準標記恢復準確對準之功 能，不但簡化製程，亦可節省製程的時間。 2. 不需額外製作光罩，因此可以減少製程的成本， 提昇製程的產能。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 本紙張尺度適用中國國家標隼（CNS ) A4ML梢（210χπ7公焓） 讀 先 間 ik 背3308ivvf.d oc / OOH A7 137 V. Description of the Invention (^) To precisely and partially remove the film layer 208 located above the alignment mark 202. According to the above, the present invention has the following features: 1. It can accurately and locally remove the film layer on the wafer without the need for an additional lithographic process, so that the alignment marks of the wafer can be accurately aligned. Not only simplify the process, but also save the process time. 2. There is no need to make additional photomasks, so it can reduce the cost of the process and increase the production capacity of the process. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. This paper scale is applicable to the Chinese National Standard (CNS) A4ML tip (210χπ7 enthalpy) Read first ik back
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